CN102683443B - Photovoltaic solar panel assembly integrated by field effect type thin-film cell and micro power supply - Google Patents
Photovoltaic solar panel assembly integrated by field effect type thin-film cell and micro power supply Download PDFInfo
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- CN102683443B CN102683443B CN201210112858.8A CN201210112858A CN102683443B CN 102683443 B CN102683443 B CN 102683443B CN 201210112858 A CN201210112858 A CN 201210112858A CN 102683443 B CN102683443 B CN 102683443B
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- 230000005669 field effect Effects 0.000 title claims abstract description 143
- 239000010409 thin film Substances 0.000 title claims abstract description 24
- 239000010408 film Substances 0.000 claims description 57
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 31
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 17
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 15
- 238000000608 laser ablation Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 239000003990 capacitor Substances 0.000 claims description 10
- 230000010354 integration Effects 0.000 claims description 10
- 238000003475 lamination Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims 2
- 229910004613 CdTe Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 12
- 239000010410 layer Substances 0.000 abstract 11
- 238000010329 laser etching Methods 0.000 abstract 1
- 239000002356 single layer Substances 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 12
- 239000011521 glass Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 230000005685 electric field effect Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 101000932768 Conus catus Alpha-conotoxin CIC Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention provides a photovoltaic solar panel assembly integrated with a field effect type thin-film cell and a micro power supply. A plurality of thin film layers are deposited on a large carrier in sequence and configured into a plurality of strip-shaped single-section cell units by laser etching; anodes and cathodes of adjacent single-layer cell units are internally connected in series so as to form a field-effect thin-film photovoltaic cell including n single-section cell units connected in series as a main body and a field-effect power supply including 2n micro single-section cell units as an accessory body; in the field effect type thin-film photovoltaic solar panel assembly integrated on the carrier, the back electrode is replaced by a back grid electrode layer, and an insulating grid layer is added on the outer side of the back grid electrode layer; the photovoltaic solar panel assembly further comprises a field effect positive electrode layer and a field effect negative electrode layer, and is characterized in that, all single-section cell units are provided with a common field effect positive electrode layer or field effect negative electrode layer, wherein the field effect positive electrode layer or the field effect negative electrode layer is an integrative electrode layer. The photovoltaic solar panel assembly has the advantages that the converting efficiency and stability are greatly enhanced, the process is simple, the failure rate of the process is low and the cost is reduced.
Description
Technical field
The present invention relates to a kind of film photovoltaic cell, be specifically related to the integrated photovoltaic cell board component of a kind of field effect type hull cell and the micro-power supply integration of field effect, carry out integratedly, form field effect type thin-film photovoltaic cell panel product structure assembly.
Background technology
The system of current known film photovoltaic cell comprises: silica-based, Copper Indium Gallium Selenide (CIGS), cadmium telluride (CdTe).The basic structure of these photovoltaic film batteries, be all adopt p-type semiconductor layer, N-shaped semiconductor layer to form to there is pn lamination spy seized with terror, and amorphous p-i-n lamination spy film photovoltaic cell seized with terror.
The special thin-film photovoltaic cell panel structure seized with terror of amorphous p-i-n lamination is to adopt plasma reinforced chemical vapour deposition (PECVD), thin layer is deposited on to large area substrate successively on glass, and realize the single hop battery unit of multiple strips with laser ablation, and between each single hop battery unit both positive and negative polarity mutually at internal series-connection, the thin-film photovoltaic cell panel assembly forming.
Copper Indium Gallium Selenide (CIGS) or cadmium telluride (CdTe) thin-film photovoltaic cell panel are to adopt vacuum evaporation, magnetron sputtering etc., thin layer is deposited on large area substrate carrier successively, and realize the single hop battery unit of multiple strips with laser ablation, and between each single hop battery unit both positive and negative polarity mutually at internal series-connection, the thin-film photovoltaic cell panel assembly forming.
Fig. 1-1, Fig. 1-2 are the concrete structures of single hop battery in known thin-film photovoltaic cell panel assembly; Wherein Fig. 1-1, is the concrete structure of known single hop amorphous silicon film photovoltaic battery, the 1.0th, and amorphous silicon p-i-n lamination knot, the 1.1st, nesa coating tco layer, the 1.2nd, backplate layer; Fig. 1-2 is the concrete structure of single hop battery unit in known Copper Indium Gallium Selenide (CIGS) or cadmium telluride (CdTe) thin-film photovoltaic cell panel assembly; The 2.0th, Copper Indium Gallium Selenide (CIGS) or cadmium telluride (CdTe) p-n lamination knot, the 2.1st, backplate layer, the 2.2nd, nesa coating ZnO layer.
Fig. 2 (comprising: Fig. 2-1, Fig. 2-2, Fig. 2-3) is the three-view diagram of amorphous silicon membrane photovoltaic battery panel structure; Amorphous silicon film photovoltaic cell panel structure is by n A1 amorphous silicon film photovoltaic single hop battery 1, single hop battery 2, single hop battery 3 ... single hop battery n, connects at internal electric; Battery current collecting bus (series-connected cell positive pole) A3, battery current collecting bus (series-connected cell negative pole) A4, carrier glass A2 form.
Referring to Fig. 3-1, Fig. 3-2, be the corresponding cell section series circuit of the B-B profile figure of Fig. 2 amorphous silicon film photovoltaic cell panel structure; Single hop battery unit structure long for L, wide be D, between adjacent single hop battery, have the gap of laser ablation; Each single hop battery is by nesa coating (TCO) 1.1, the output cathode of single hop battery; P-i-n unijunction (a-Si:H) 1.0; Backplate layer 1.2, the output negative pole of single hop battery forms; A5 is the mutual both positive and negative polarity series connection of each single hop battery contact-making surface; So the outer amorphous silicon film photovoltaic cell panel structure of Now Domestic is by n amorphous silicon film photovoltaic cell section, the assembly building in the series connection of photovoltaic battery panel internal electric.
Patent application document (CN102064213A) discloses " a kind of extra electric field effect film photovoltaic cell and with the integrated photovoltaic battery panel of electric field source ", is called for short: field effect photovoltaic battery panel, in this field effect photovoltaic battery panel, each single hop battery is to adopt field effect amorphous silicon film photovoltaic battery, referring to Fig. 4-1 field effect p-i-n unijunction film photovoltaic cell structure, the two intrinsic p-i-n unijunction film photovoltaic cell structures of Fig. 4-2 field effect, wherein 10-1 and 20-1 are that TCO transparency conducting layer, 10-2 and 20-2 are that p-i-n unijunction layer, 10-3 and 20-3 are that backplate layer, 10-4 and 20-4 are that insulating barrier, 10-5 and 20-5 are electric field layers, and single hop battery circuit symbol, G is electric field layer tie point, the three-view diagram of this field effect photovoltaic cell plate structure, shown in Fig. 5, its principal character is: be made up of n field effect amorphous silicon film photovoltaic single hop battery C1.1, support C 1.2, series-connected cell output cathode C1.3, series-connected cell output negative pole C1.4, inner adjacent cell both positive and negative polarity joint face C1.5, electric field layer C1.6, and (long be L to each single hop cell section, wide for two ends a) are integrated with 3, (wide for b, length are a) connect isostructural micro cell C1.7 and C1.8, C1.9 is electric field layer connection between micro cell, the corresponding single hop battery of this field effect photovoltaic cell plate structure A-A profile and micro cell connecting circuit figure, shown in Fig. 6-1, the corresponding each single hop battery series connection of B-B profile connecting circuit figure, shown in Fig. 6-2, in Fig. 6-1, the two ends of each field effect amorphous silicon film photovoltaic cell section, all be integrated with 3 isostructural micro cell group electric field power supplys of series connection, 3, two ends, left and right series connection micro cell group, be respectively Vb1+Vb2+Vb3=3Vb, Vb4+Vb5+Vb6=3Vb, and positive pole and the negative pole of two ends, left and right series connection micro cell group, all to be connected in parallel on this field effect amorphous silicon film photovoltaic cell section VLn (n=1 by electric field layer C1.6 and tco layer, 2, 3 ... n), form each field effect amorphous silicon film photovoltaic cell section VLn and have self integrated series connection micro cell group, form the electric field power supply of this single hop battery, in Fig. 6-2, the field effect amorphous silicon film photovoltaic single hop battery VLn of each charged field ionization source micro cell group, correspondence is connected in series composition field effect photovoltaic battery panel and sets up.
Patent application document (CN102064213A) discloses " a kind of extra electric field effect film photovoltaic cell and with the integrated photovoltaic battery panel of electric field source ", is called for short: field effect photovoltaic battery panel; In laser ablation technique, etching n single hop battery, also to carry out 6 micro cells of meticulous laser ablation at each single hop battery, making laser ablation in technique, form etching number is n × 6, causes laser ablation cost to rise 6 times.
Summary of the invention
In order to improve film photovoltaic cell conversion efficiency and stability, simplify technique, improve rate of finished products and reduce costs, the invention provides the integrated photovoltaic cell board component of a kind of field effect type hull cell and the micro-power supply integration of field effect.
The present invention discloses at patent application document (CN102064213A) on the basis of " a kind of extra electric field effect film photovoltaic cell and with the integrated photovoltaic battery panel of electric field source ", adopt the frame mode different from patent application document (CN102064213A), realize the integrated photovoltaic cell board component of the micro-power-supply battery of field effect film photovoltaic cell and field effect.
Realizing the object of the invention technical scheme is: the photovoltaic cell board component that a kind of field effect type hull cell and the micro-power supply integration of field effect are integrated, its structure is: adopt on a carrier (substrate glass), carry out plasma reinforced chemical vapour deposition (PECVD), thin layer is deposited on large area carrier (substrate glass) successively, and realize the single hop battery unit of multiple strips with laser ablation, and between adjacent single hop battery unit both positive and negative polarity mutually at internal series-connection, forming the field effect film photovoltaic cell that n single hop battery unit series connection is main body is the micro-power supply of field effect that accessory body is connected with 2n micro-single hop battery unit, be integrated in the field effect thin-film photovoltaic cell panel assembly on a carrier (substrate glass), simultaneously, in single junction cell structure, binode battery structure, backplate in three junction battery structures and two single junction cell structure adopts back of the body grid electrode layer to substitute, and increase and have insulated gate layer in the outside of this back of the body grid electrode layer, and field effect positive electrode layer or field effect positive electrode layer, it is characterized in that, all single hop battery units are provided with common field effect positive electrode layer or field effect positive electrode layer, and this field effect positive electrode layer or field effect positive electrode layer are complete electrode layers.
Described field effect thin-film photovoltaic cell panel is to adopt n field effect hull cell section, the cell panel of mutual connected in electrical series composition in inside.In accompanying drawing 7, Fig. 7-2nd, the structure chart of single hop field effect type amorphous silicon unijunction film photovoltaic cell; 1-1 is that nesa coating tco layer, 1-2 are that a-Si:H (p-i-n) unijunction, 1-3 are that back of the body grid electrode layer, 1-4 are that insulated gate layer, 1-5 are field effect positive electrode layers; Fig. 7-3rd, the structure chart of the two unijunction amorphous silicon film photovoltaic battery units of single hop field effect type; 2-1 is that nesa coating tco layer, 2-2 are that a-Si:H and a-SiGe:H (p-i-n) unijunction, 2-3 are that back of the body grid electrode layer, 2-4 are that insulated gate layer, 2-5 are field effect positive electrode layers; Figure E is the structure chart of single hop field effect type Copper Indium Gallium Selenide (CIGS) or cadmium telluride (CdTe) film photovoltaic cell unit; 3-1 is that nesa coating ZnO layer, 3-2 are that (pn) knot, 3-3 are that back of the body grid electrode layer, 3-4 are that insulated gate layer, 3-5 are field effect positive electrode layer.
On carrier, be integrated with DCn (n=1,2,3 ... n) the field effect film photovoltaic cell (being called for short: n section series connection main body battery) that the series connection of individual single hop battery is main body with >=a 2n single hop micro cell is the micro-power supply of field effect (being called for short: 2n micro-power supply of connecting) that accessory body connect, and the output voltage of the micro-power supply of field effect of connecting is >=2nv (v is single hop micro cell output voltage); 2n series connection micro-power supply output cathode and negative pole, be connected to two ends P1 point and the Pn+1 point of n series capacitor; N section series connection main body battery (DCn section battery) transparency conducting layer TCO output cathode connects Pn+1 point, also connects load RL simultaneously; N section series connection main body battery (DC1 section battery) back of the body grid electrode layer output negative pole connects load RL, and n section series connection main body battery (DC1 section battery) field effect positive electrode layer connects P1 point; And n series capacitor C1 ... Cn is dividing point (voltage drop on each electric capacity) P2 each other ... Pn, correspondence is connected to DC2 section battery ... the field effect positive electrode layer of DCn section battery.
On field effect type thin-film photovoltaic cell panel modular construction, also adapt to field effect Copper Indium Gallium Selenide (CIGS) and cadmium telluride (CdTe) thin-film photovoltaic cell panel modular construction.
The present invention has changed in prior art above each single hop battery unit or the extra electric field electrode arranging respectively is below the configuration state arranging separately; This integrated film photovoltaic cell conversion efficiency and stability are all improved significantly.Meanwhile, because the extra electric field electrode (field effect positive electrode layer or field effect positive electrode layer) of film photovoltaic cell of the present invention is set to a complete electrode layer, so processing technology is simple; Process fault rate reduces (rate of finished products has improved 5%).Simultaneously cost 20%.Solve in prior art still unsolved technical barrier.
Brief description of the drawings
Fig. 1-1 known silica-base film photovoltaic cell structure figure;
The known CIGS of Fig. 1-2 (CdTe) film photovoltaic cell structure chart;
Fig. 2-1, Fig. 2-2, Fig. 2-3 are the three-view diagram of known amorphous silicon film photovoltaic cell panel structure;
Fig. 3-1, Fig. 3-2 are the corresponding cell section series circuit of known amorphous silicon film photovoltaic cell panel B-B cutaway view figure;
Fig. 4-1 field effect p-i-n unijunction film photovoltaic cell structure;
The two intrinsic p-i-n unijunction film photovoltaic cell structures of Fig. 4-2 field effect;
The three-view diagram that Fig. 5-1, Fig. 5-2, Fig. 5-3 are field effect photovoltaic cell plate structure;
Fig. 6-1 is the corresponding single hop battery of field effect photovoltaic battery panel A-A profile and micro cell connecting circuit figure;
Fig. 6-2 are the corresponding each single hop battery series connection of field effect photovoltaic battery panel B-B profile connecting circuit figure;
Fig. 7-2 are single hop field effect type unijunction hull cell structure chart; Fig. 7-1 is the two intrinsic unijunction hull cell structure charts of field effect type;
Fig. 7-3 are single hop field effect type CIGS or CdTe hull cell structure chart.
Fig. 8 is field effect type silica-base film photovoltaic battery panel assembly circuit schematic diagram of the present invention;
The three-view diagram that Fig. 9-1, Fig. 9-2, Fig. 9-3 are field effect type amorphous silicon film photovoltaic battery panel components structure of the present invention;
Figure 10 is field effect type amorphous silicon film photovoltaic cell panel B-B cutaway view of the present invention.
Embodiment
Embodiment 1, the integrated photovoltaic cell board component of the micro-power supply integration of field effect type hull cell and field effect is with reference to shown in accompanying drawing 8, the circuit theory diagrams of embodiment of the present invention field effect type amorphous silicon film photovoltaic battery board component; These circuit theory diagrams comprise by n single hop battery DC1, battery DC2 ... the field effect film photovoltaic cell that battery DCn units in series is main body; By 2n single hop micro cell WC1, micro cell WC2 ... the micro-power supply of field effect that micro cell WC2n units in series is accessory body; N capacitor C 1, C2 ... the Cn three parts compositions of connecting.Wherein, 2n single hop micro cell WC1, micro cell WC2 ... the micro-positive source 2n of field effect ν that micro cell WC2n series connection is accessory body+, be connected to single hop battery DC1 field effect positive electrode layer, and micro-power cathode 1 ν of the field effect of accessory body-, be connected to single hop battery DCn nesa coating tco layer; C1, the C2 of series connection ... Cn capacitor is to the micro-power supply of the field effect of accessory body (2n ν+)-(1 ν-) >=2n ν+carry out voltage dividing potential drop, the corresponding tie point P2 of each condenser voltage dividing potential drop ... Pn, and connect corresponding battery DC2 ... the field effect positive electrode layer of battery DCn; Battery DC1 field effect positive electrode layer connects corresponding P1, the corresponding Pn+1 that connects of battery DCn nesa coating tco layer; Battery DC1, battery DC2 ... the positive and negative output stage B3 of field effect film photovoltaic cell, the B4 that battery DCn units in series is main body connects load RL.
(comprise Fig. 9-1 with reference to accompanying drawing 9, Fig. 9-2, Fig. 9-3) shown in, in order to realize the three-view diagram of embodiment of the present invention field effect type amorphous silicon film photovoltaic battery board component: be to adopt on a carrier (glass) in accompanying drawing 9, carry out plasma reinforced chemical vapour deposition (PECVD), thin layer is deposited on to large area substrate successively on glass, and realize the single hop battery unit of multiple strips with laser ablation, and between adjacent single hop battery unit both positive and negative polarity mutually at internal series-connection, forming the field effect film photovoltaic cell that n single hop battery series connection is main body is the micro-power supply of field effect that accessory body is connected with 2n micro-single hop battery, be integrated in the field effect thin-film photovoltaic cell panel assembly of (glass) on a carrier.
Wherein B1 is a carrier (glass) plate, B2 is the two intrinsic unijunction film photovoltaic cells of single hop field effect type amorphous silicon unit, the technique adopting is that ion strengthens chemical vapour deposition (CVD) (PECVD), thin layer is deposited on to large area substrate successively on glass, with laser ablation form wide for D, length be L single hop DC1 ... DCn battery unit and a technique linkage section unit, inner both positive and negative polarity is mutually composed in series field effect thin-film photovoltaic cell panel, B3 is the output afflux terminal positive pole that is composed in series field effect film photovoltaic cell, and B4 is the output afflux terminal negative pole that is composed in series field effect film photovoltaic cell, further adopt laser ablation or graduating with cutter etching technique at established field effect film photovoltaic cell face, etching deposition lamination forms B9, B10 isolation channel gap, make field effect thin-film photovoltaic cell panel assembly upper and lower, each form n long be d1, wide is the micro cell WC1 of D ... micro cell WCn is d2 with length, wide is D micro cell WCn+1 ... WC2n, B5 is n the micro cell WC1 that connects with B6 ... positive pole and the negative pole of micro cell WCn output afflux terminal, B7 is n the micro cell WCn+1 that connects with B8 ... positive pole and the negative pole of micro cell WC2n output afflux terminal, B5 and B8 are carried out to external electrical to be connected, form up and down 2n micro cell series connection, positive pole and negative pole by B7 and B6 as output afflux terminal, finally make on a carrier of B1 (glass) plate, integrated formation is wide is D, the long K of being, n battery DC1, battery DC2 ... the field effect film photovoltaic cell that battery DCn units in series is main body, with 2n micro cell WC1, the micro cell WC2---micro cell WC2n units in series micro-power supply of field effect that is accessory body.
On embodiment of the present invention field effect type amorphous silicon film photovoltaic battery plate, in laser ablation technique, etching n single hop battery, and adopt twice of simple graduating with cutter etching technique, etch deposition lamination and form B9, B10 twice isolation channel gap, field effect film photovoltaic cell and two field effect micro cells that series connection is accessory body that a series connection that forms same structure is main body, make laser ablation etching in technique count n constant, and etching technics cost does not improve substantially.
In accompanying drawing 9-1, Fig. 9-2, Fig. 9-3, in each battery unit and micro cell unit, back of the body grid electrode layer 2-3 has strip window, and strip window is referring to carrying on the back grid electrode layer cutaway view in figure; Field effect thin-film photovoltaic cell panel assembly B-B cutaway view is referring to shown in accompanying drawing 10.
Capacitor C 1 in accompanying drawing 10 ... Cn is connected in series, and capacitor C 1 right-hand member connects P1 point, and the micro-power supply output cathode of field effect B7 (2n ν+) is also connected to P1 point, and P1 point is connected to battery DC1 field effect positive electrode layer; Capacitor C n left end connects Pn+1 point, and the micro-power supply output negative pole of field effect B6 (1 ν-) is also connected to Pn+1 point, and Pn+1 point is connected to battery DCn transparency conducting layer (TCO); Capacitor C 1 ... interlinkage P2 in Cn series connection ... Pn, corresponding connection battery DC2 ... battery DCn field effect positive electrode layer; Each adjacent single hop battery DC1 ... battery DCn is to be connected in series by adjacent cell section both positive and negative polarity series connection contact-making surface; Each single hop battery DC1 ... the field effect positive electrode layer 2-5 of battery DCn and below insulated gate layer 2-3 are by a-Si:H and a-SiGe:H (p-i-n) unijunction 2-2 and a nesa coating tco layer 2-1 formation tunnel effect.
Claims (4)
1. the integrated photovoltaic cell board component of a field effect type hull cell and the micro-power supply integration of field effect, its structure is: on a carrier, carry out plasma reinforced chemical vapour deposition, thin layer is deposited on large area carrier successively, and realize the single hop battery unit of multiple strips with laser ablation, and between adjacent single hop battery unit both positive and negative polarity mutually at internal series-connection, forming the field effect film photovoltaic cell that n single hop battery unit series connection is main body is the micro-power supply of field effect that accessory body is connected with 2n micro-single hop battery unit, be integrated in a field effect thin-film photovoltaic cell panel assembly on carrier, simultaneously, in single junction cell structure, binode battery structure, backplate in three junction battery structures and two intrinsic layer single junction cell structure adopts back of the body grid electrode layer to substitute, and increase and have insulated gate layer in the outside of this back of the body grid electrode layer, and field effect positive electrode layer or field effect positive electrode layer, it is characterized in that, all single hop battery units are provided with common field effect positive electrode layer or field effect positive electrode layer, this field effect positive electrode layer or field effect positive electrode layer are complete electrode layers,
On carrier, be integrated with field effect film photovoltaic cell that the series connection of n single hop battery is main body with >=a 2n single hop micro cell is the micro-power supply of field effect that accessory body is connected, and the output voltage of the micro-power supply of field effect of connecting is >=2nv; V is single hop micro cell output voltage, and the micro-power supply output cathode of field effect and negative pole are connected to the two ends of n series capacitor; The micro-power supply output cathode of field effect is also connected to field effect film photovoltaic cell output negative pole, the field effect positive electrode layer of corresponding single hop battery unit; The micro-power supply output negative pole of field effect is also connected to field effect film photovoltaic cell output cathode, the transparency conducting layer TCO of corresponding single hop battery unit; And n series capacitor C1 ... Cn is dividing point each other, and correspondence is connected to single hop battery 2 ... the field effect positive electrode layer of battery n.
2. the integrated photovoltaic cell board component of field effect type hull cell according to claim 1 and the micro-power supply integration of field effect, it is characterized in that, in the integrated photovoltaic cell board component of described field effect type hull cell and the micro-power supply integration of field effect, single hop battery unit structure can be lamination
p-i-nunijunction or tie more,
p-i-np-i-n unijunction, back of the body grid electrode layer, insulated gate layer, field effect positive electrode layer that unijunction is made up of nesa coating tco layer, a-Si:H material are formed; The structure of the two intrinsic layer unijunction amorphous silicon film photovoltaic battery units of single hop field effect type, the p-i-n unijunction being made up of nesa coating tco layer, a-Si:H and a-SiGe:H material, back of the body grid electrode layer, insulated gate layer, field effect positive electrode layer are formed; The structure of single hop field effect type Copper Indium Gallium Selenide CIGS or cadmium telluride CdTe film photovoltaic cell unit, be by nesa coating ZnO layer,
pnknot, back of the body grid electrode layer, insulated gate layer, field effect positive electrode layer form.
3. the integrated photovoltaic cell board component of field effect type hull cell according to claim 1 and the micro-power supply integration of field effect, it is characterized in that, described field effect type Copper Indium Gallium Selenide and Cadimium telluride thin film photovoltaic cell structure, its structure is: by nesa coating,
knot, back of the body grid electrode layer, insulated gate layer, the combination of field effect positive electrode layer.
4. according to the field effect type hull cell one of claim 1 ~ 3 Suo Shu and the integrated photovoltaic cell board component of the micro-power supply integration of field effect, it is characterized in that, on described field effect type thin-film photovoltaic cell panel modular construction, also adapt to field effect Copper Indium Gallium Selenide and Cadimium telluride thin film photovoltaic cell plate component structure.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210112858.8A CN102683443B (en) | 2012-04-17 | 2012-04-17 | Photovoltaic solar panel assembly integrated by field effect type thin-film cell and micro power supply |
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| CN201210112858.8A CN102683443B (en) | 2012-04-17 | 2012-04-17 | Photovoltaic solar panel assembly integrated by field effect type thin-film cell and micro power supply |
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| CN102683443A CN102683443A (en) | 2012-09-19 |
| CN102683443B true CN102683443B (en) | 2014-12-10 |
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|---|---|---|---|---|
| CN102064213A (en) * | 2009-10-14 | 2011-05-18 | 郭建国 | External electric field effect film photovoltaic battery and photovoltaic battery board integrated with electric field sources |
| CN202026257U (en) * | 2011-05-03 | 2011-11-02 | 大连皿能光电科技有限公司 | Minitype solar power supply system |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102064213A (en) * | 2009-10-14 | 2011-05-18 | 郭建国 | External electric field effect film photovoltaic battery and photovoltaic battery board integrated with electric field sources |
| CN202026257U (en) * | 2011-05-03 | 2011-11-02 | 大连皿能光电科技有限公司 | Minitype solar power supply system |
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