The photovoltaic cell board component that field effect type hull cell and little power supply integration are integrated
Technical field
The present invention relates to a kind of film photovoltaic cell, be specifically related to the integrated photovoltaic cell board component of a kind of field effect type hull cell and the little power supply integration of field effect, carry out integratedly, form field effect type film photovoltaic cell panel products construction package.
Background technology
The system of current known film photovoltaic cell comprises: silica-based, CIGS (CIGS), cadmium telluride (CdTe).The basic structure of these photovoltaic film batteries; All be to adopt p type semiconductor layer, n type semiconductor layer to form to have pn lamination spy seized with terror, and amorphous
lamination spy film photovoltaic cell seized with terror.
The special film photovoltaic cell plate structure seized with terror of amorphous
lamination is to adopt plasma reinforced chemical vapour deposition (PECVD); It is on glass that thin layer is deposited on the large tracts of land substrate successively; And realize the single hop battery unit of a plurality of strips with laser ablation; And between each single hop battery unit both positive and negative polarity each other at internal series-connection, formed film photovoltaic cell board component.
CIGS (CIGS) or cadmium telluride (CdTe) film photovoltaic cell plate are to adopt vacuum evaporation, magnetron sputtering etc.; Thin layer is deposited on the large tracts of land substrate carrier successively; And realize the single hop battery unit of a plurality of strips with laser ablation; And between each single hop battery unit both positive and negative polarity each other at internal series-connection, formed film photovoltaic cell board component.
Fig. 1-1, Fig. 1-2 are the concrete structures of single hop battery in the known film photovoltaic cell board component; Fig. 1-1 wherein; Be the concrete structure of known single hop amorphous silicon film photovoltaic battery, the 1.0th, amorphous silicon
lamination knot, the 1.1st, nesa coating tco layer, the 1.2nd, backplate layer; Fig. 1-2 is the concrete structure of single hop battery unit in known CIGS (CIGS) or cadmium telluride (CdTe) the film photovoltaic cell board component; 2.0 be CIGS (CIGS) or cadmium telluride (CdTe)
lamination knot, the 2.1st, backplate layer, the 2.2nd, nesa coating ZnO layer.
Fig. 2 (comprising: Fig. 2-1, Fig. 2-2, Fig. 2-3) is the three-view diagram of amorphous silicon membrane photovoltaic battery panel structure; The amorphous silicon film photovoltaic cell panel structure is by n A1 amorphous silicon film photovoltaic single hop battery 1, single hop battery 2, single hop battery 3 ... Single hop battery n connects at internal electric; Battery current collecting bus (series-connected cell is anodal) A3, battery current collecting bus (series-connected cell negative pole) A4, carrier glass A2 form.
Referring to Fig. 3-1, Fig. 3-2, be the corresponding cell section series circuit of the B-B profile figure of Fig. 2 amorphous silicon film photovoltaic cell panel structure; The single hop battery unit structure long for L, wide be D, the gap of laser ablation is arranged between the adjacent single hop battery; Each single hop battery is by nesa coating (TCO) 1.1, the output cathode of single hop battery;
Unijunction (
A-Si:H) 1.0; Backplate layer 1.2, the output negative pole of single hop battery is formed; A5 is the mutual both positive and negative polarity series connection of each a single hop battery contact-making surface; So current amorphous silicon film photovoltaic cell panel structure both at home and abroad is by n amorphous silicon film photovoltaic cell section, the assembly that makes up in the series connection of photovoltaic battery panel internal electric.
Patent application document (CN102064213A) discloses " a kind of extra electric field effect film photovoltaic cell and and the integrated photovoltaic battery panel of electric field source ", is called for short: the field effect photovoltaic battery panel; Each single hop battery is to adopt field effect amorphous silicon film photovoltaic battery in this field effect photovoltaic battery panel; Referring to Fig. 4-1 field effect
unijunction film photovoltaic cell structure, two these
the seized with terror unijunction film photovoltaic cell structures of Fig. 4-2 field effect; Wherein 10-1 and 20-1 are that TCO transparency conducting layer, 10-2 and 20-2 are that
unijunction layer, 10-3 and 20-3 are that backplate layer, 10-4 and 20-4 are that insulating barrier, 10-5 and 20-5 are the electric field layers; And single hop battery circuit symbol, G is an electric field layer tie point; The three-view diagram of this field effect photovoltaic cell plate structure; Referring to shown in Figure 5; Its principal character is: be made up of n field effect amorphous silicon film photovoltaic single hop battery C1.1, support C 1.2, series-connected cell output cathode C1.3, series-connected cell output negative pole C1.4, inner adjacent cell both positive and negative polarity joint face C1.5, electric field layer C1.6; And each single hop cell section (long for L, wide two ends for a) all be integrated with 3 (wide for b, longly be a) isostructural micro cell C1.7 of series connection and C1.8, C1.9 is that the electric field layer connects between the micro cell; Corresponding single hop battery of this field effect photovoltaic cell plate structure A-A profile and micro cell connecting circuit figure, shown in Fig. 6-1, corresponding each the single hop battery series connection connecting circuit figure of B-B profile is shown in Fig. 6-2; Among Fig. 6-1; The two ends of each field effect amorphous silicon film photovoltaic cell section; All be integrated with 3 isostructural micro cell group electric field power supplys of series connection, 3 series connection of right ends micro cell group is respectively Vb1+Vb2+Vb3=3Vb, Vb4+Vb5+Vb6=3Vb; And the positive pole and the negative pole of right ends series connection micro cell group; All be to be connected in parallel on this field effect amorphous silicon film photovoltaic cell section VLn (n=1,2,3 through electric field layer C1.6 and tco layer ... N), forming each field effect amorphous silicon film photovoltaic cell section VLn all has self integrated series connection micro cell group, constitutes the electric field power supply of this single hop battery; Among Fig. 6-2, the field effect amorphous silicon film photovoltaic single hop battery VLn of each charged field ionization source micro cell group, correspondence is connected in series and forms the establishment of field effect photovoltaic battery panel.
Patent application document (CN102064213A) discloses " a kind of extra electric field effect film photovoltaic cell and and the integrated photovoltaic battery panel of electric field source ", is called for short: the field effect photovoltaic battery panel; In laser ablation technology, etching n single hop battery, also to carry out 6 micro cells of meticulous laser ablation at each single hop battery, making laser ablation in technology, form the etching number is n * 6, causes the laser ablation cost to rise 6 times.
Summary of the invention
In order to improve film photovoltaic cell conversion efficiency and stability, simplify technology, the raising rate of finished products also reduces cost, and the present invention provides a kind of field effect type hull cell and the integrated photovoltaic cell board component of the little power supply integration of field effect.
The present invention discloses on the basis of " a kind of extra electric field effect film photovoltaic cell and and the integrated photovoltaic battery panel of electric field source " at patent application document (CN102064213A); Adopt and patent application document (CN102064213A) various structure mode, realize field effect film photovoltaic cell and the integrated photovoltaic cell board component of the little power-supply battery of field effect.
Realize that the object of the invention technical scheme is: the photovoltaic cell board component that a kind of field effect type hull cell and the little power supply integration of field effect are integrated; Its structure is: adopt on the carrier (substrate glass); Carry out plasma reinforced chemical vapour deposition (PECVD); Thin layer is deposited on the large tracts of land carrier (substrate glass) successively; And realize the single hop battery unit of a plurality of strips with laser ablation, and between the adjacent single hop battery unit both positive and negative polarity each other at internal series-connection, forming n single hop battery unit series connection is the little power supply of field effect that accessory body is connected for the field effect film photovoltaic cell of main body with the individual little single hop battery unit of 2n; Be integrated in the field effect film photovoltaic cell board component on the carrier (substrate glass); Simultaneously, the backplate in single junction cell structure, binode battery structure, three junction battery structures and two layer single junction cell structure originally seized with terror adopts back of the body grid electrode layer to substitute, and in the increase of the outside of this back of the body grid electrode layer insulated gate layer is arranged; And field effect positive electrode layer or field effect positive electrode layer, it is characterized in that all single hop battery units are provided with common field effect positive electrode layer or field effect positive electrode layer, this field effect positive electrode layer or field effect positive electrode layer are complete electrode layers.
Described field effect film photovoltaic cell plate is to adopt n field effect hull cell section, the cell panel that mutual connected in electrical series is formed in inside.In accompanying drawing 7, Fig. 7-the 2nd, the structure chart of single hop field effect type amorphous silicon unijunction film photovoltaic cell; 1-1 is that nesa coating tco layer, 1-2 are
A-Si:H(
) unijunction, 1-3 be that back of the body grid electrode layer, 1-4 are that insulated gate layer, 1-5 are the field effect positive electrode layers; Fig. 7-the 3rd, the structure chart of two these layer unijunction amorphous silicon film photovoltaic battery units seized with terror of single hop field effect type; 2-1 is that nesa coating tco layer, 2-2 are
A-Si:HWith
A-SiGe:H(
) unijunction, 2-3 be that back of the body grid electrode layer, 2-4 are that insulated gate layer, 2-5 are the field effect positive electrode layers; Figure E is the structure chart of single hop field effect type CIGS (CIGS) or cadmium telluride (CdTe) film photovoltaic cell unit; 3-1 be nesa coating ZnO layer, 3-2 be (
) knot, 3-3 be that back of the body grid electrode layer, 3-4 are that insulated gate layer, 3-5 are the field effect positive electrode layer.
On carrier, be integrated with DCn (n=1,2,3 ... N) series connection of individual single hop battery (is called for short: be that (abbreviation: 2n little power supply of connecting), and the output voltage of the little power supply of field effect of connecting is >=2nv (v is a single hop micro cell output voltage) the accessory body little power supply of field effect of connect with >=2n single hop a micro cell n section series connection main body battery) for the field effect film photovoltaic cell of main body; 2n series connection little power supply output cathode and negative pole are connected to the two ends P1 point and the Pn+1 point of n series capacitor; N section series connection main body battery (DCn section battery) transparency conducting layer TCO output cathode connects the Pn+1 point, also connects load RL simultaneously; N section series connection main body battery (DC1 section battery) back of the body grid electrode layer output negative pole connects load RL, and n section series connection main body battery (DC1 section battery) field effect positive electrode layer connects the P1 point; And n series capacitor C1 ... Cn is dividing point (voltage drop on each electric capacity) P2 each other ... Pn, correspondence is connected DC2 section battery ... The field effect positive electrode layer of DCn section battery.
On the field effect type film photovoltaic cell board component structure, also adapt to field effect CIGS (CIGS) and cadmium telluride (CdTe) film photovoltaic cell board component structure.
The present invention changed in the prior art each above the single hop battery unit or the following extra electric field electrode that is provided with respectively all be the configuration state that is provided with separately; This integrated film photovoltaic cell conversion efficiency and stability all are improved significantly.Simultaneously, because the extra electric field electrode (field effect positive electrode layer or field effect positive electrode layer) of film photovoltaic cell of the present invention is set to a complete electrode layer, so processing technology is simple; The process fault rate reduces (rate of finished products has improved 5%).Cost has reduced by 20% simultaneously.Solved still unsolved technical barrier in the prior art.
Description of drawings
The known silica-base film photovoltaic cell of Fig. 1-1 structure chart;
The known CIGS of Fig. 1-2 (CdTe) film photovoltaic cell structure chart;
Fig. 2-1, Fig. 2-2, Fig. 2-3 are the three-view diagram of known amorphous silicon film photovoltaic cell panel structure;
Fig. 3-1, Fig. 3-2 are the corresponding cell section series circuit of known amorphous silicon film photovoltaic cell panel B-B cutaway view figure;
Fig. 4-1 field effect
unijunction film photovoltaic cell structure;
Two these
the seized with terror unijunction film photovoltaic cell structures of Fig. 4-2 field effect;
Fig. 5-1, Fig. 5-2, Fig. 5-3 are the three-view diagram of field effect photovoltaic cell plate structure;
Fig. 6-1 is corresponding single hop battery of field effect photovoltaic battery panel A-A profile and micro cell connecting circuit figure;
Fig. 6-2 is corresponding each the single hop battery series connection connecting circuit figure of field effect photovoltaic battery panel B-B profile;
Fig. 7-2 is a single hop field effect type unijunction hull cell structure chart; Fig. 7-1 is two these unijunction hull cell structure charts seized with terror of field effect type; Fig. 7-3 is single hop field effect type CIGS or CdTe hull cell structure chart.
Fig. 8 is a field effect type silica-base film photovoltaic battery panel assembly circuit schematic diagram of the present invention;
Fig. 9-1, Fig. 9-2, Fig. 9-3 are the three-view diagram of field effect type amorphous silicon film photovoltaic battery panel components structure of the present invention;
Figure 10 is a field effect type amorphous silicon film photovoltaic cell panel B-B cutaway view of the present invention.
Embodiment
Embodiment 1, and the integrated photovoltaic cell board component of the little power supply integration of field effect type hull cell and field effect is with reference to shown in the accompanying drawing 8, the circuit theory diagrams of embodiment of the invention field effect type amorphous silicon film photovoltaic battery board component; These circuit theory diagrams comprise by n single hop battery DC1, battery DC2 ... Battery DCn units in series is the field effect film photovoltaic cell of main body; By 2n single hop micro cell WC1, micro cell WC2 ... Micro cell WC2n units in series is the little power supply of field effect of accessory body;
N capacitor C 1, C2 ... Cn three parts of connecting are formed.Wherein, 2n single hop micro cell WC1, micro cell WC2 ... Micro cell WC2n series connection is the little positive source of field effect of accessory body
; Be connected to single hop battery DC1 field effect positive electrode layer; And the little power cathode of the field effect of accessory body
is connected to single hop battery DCn nesa coating tco layer; C1, the C2 of series connection ... The Cn capacitor carries out the voltage dividing potential drop to the little power supply of the field effect of accessory body
; The corresponding tie point P2 of each condenser voltage dividing potential drop ... Pn, and connect corresponding battery DC2 ... The field effect positive electrode layer of battery DCn; Battery DC1 field effect positive electrode layer connects corresponding P1, the corresponding Pn+1 that connects of battery DCn nesa coating tco layer; Battery DC1, battery DC2 ... Battery DCn units in series is that the positive and negative output stage B3 of the field effect film photovoltaic cell of main body, B4 connect load RL.
Shown in accompanying drawing 9 (comprising Fig. 9-1, Fig. 9-2, Fig. 9-3); In order to realize the three-view diagram of embodiment of the invention field effect type amorphous silicon film photovoltaic battery board component: be to adopt on the carrier (glass) in the accompanying drawing 9; Carry out plasma reinforced chemical vapour deposition (PECVD); It is on glass that thin layer is deposited on the large tracts of land substrate successively; And realize the single hop battery unit of a plurality of strips with laser ablation; And between the adjacent single hop battery unit both positive and negative polarity each other at internal series-connection, forming the series connection of n single hop battery is the little power supply of field effect that accessory body is connected for the field effect film photovoltaic cell of main body with the individual little single hop battery of 2n, is integrated in the field effect film photovoltaic cell board component of (glass) on the carrier.
Wherein B1 is a carrier (glass) plate; B2 is the two intrinsic unijunction film photovoltaic cell unit of single hop field effect type amorphous silicon; The technology that adopts is that ion strengthens chemical vapour deposition (CVD) (PECVD); It is on glass that thin layer is deposited on the large tracts of land substrate successively; Use laser ablation form wide as D, long be L single hop DC1 ... DCn battery unit and a technology linkage section unit, inner both positive and negative polarity each other is composed in series field effect film photovoltaic cell plate; B3 is the output afflux terminal positive pole that is composed in series the field effect film photovoltaic cell, and B4 is the output afflux terminal negative pole that is composed in series the field effect film photovoltaic cell; Further adopt laser ablation or graduating with cutter etching technique at established field effect film photovoltaic cell face; Etching deposition lamination forms B9, B10 isolation channel crack; Make about the field effect film photovoltaic cell board component; Each form n long for d1, widely be the micro cell WC1 of D ... Micro cell WCn with long for d2, wide be D micro cell WCn+1 ... WC2n; B5 is n the micro cell WC1 that connects with B6 ... The positive pole and the negative pole of micro cell WCn output afflux terminal, B7 is n the micro cell WCn+1 that connects with B8 ... The positive pole and the negative pole of micro cell WC2n output afflux terminal carry out external electrical with B5 and B8 and are connected; Form the series connection of 2n micro cell up and down, by B7 and B6 as positive pole and the negative pole of exporting the afflux terminal; Finally make on a carrier of B1 (glass) plate; Integrated formation is wide to be D, the long K of being; N battery DC1, battery DC2 ... Battery DCn units in series is the field effect film photovoltaic cell of main body, with 2n micro cell WC1, micro cell WC2---micro cell WC2n units in series be the little power supply of field effect of accessory body.
On the embodiment of the invention field effect type amorphous silicon film photovoltaic battery plate; In laser ablation technology, etching n single hop battery, and adopt simple graduating with cutter etching technique twice; Etch the deposition lamination and form B9, B10 twice isolation channel crack; Field effect film photovoltaic cell and two field effect micro cells that series connection is an accessory body that formation is main body with a series connection of spline structure, it is constant to make laser ablation etching in technology count n, and the etching technics cost does not have to improve basically.
In each battery unit and the micro cell unit, back of the body grid electrode layer 2-3 has the strip window among accompanying drawing 9-1, Fig. 9-2, Fig. 9-3, and the strip window is referring to back of the body grid electrode layer cutaway view among the figure; Field effect film photovoltaic cell board component B-B cutaway view is referring to shown in the accompanying drawing 10.
Capacitor C 1 in the accompanying drawing 10 ... Cn is connected in series, and
capacitor C 1 right-hand member connects the P1 point, the little power supply output cathode of field effect B7 (
) also being connected the P1 point, the P1 point is connected battery DC1 field effect positive electrode layer; Capacitor C n left end connects the Pn+1 point, the little power supply output negative pole of field effect B6 (
) also being connected the Pn+1 point, the Pn+1 point is connected battery DCn transparency conducting layer (TCO);
Capacitor C 1 ... Interlinkage P2 in the Cn series connection ... Pn, corresponding connection battery DC2 ... Battery DCn field effect positive electrode layer; The single hop battery DC1 that each is adjacent ... Battery DCn is to be connected in series through adjacent cell section both positive and negative polarity series connection contact-making surface; Each single hop battery DC1 ... The field effect positive electrode layer 2-5 of battery DCn and following insulated gate layer 2-3, be through
A-Si:HWith
A-SiGe:H(
) a unijunction 2-2 and a nesa coating tco layer 2-1 formation tunnel effect.