CN102683443A - Photovoltaic solar panel assembly integrated by field effect type thin-film cell and micro power supply - Google Patents
Photovoltaic solar panel assembly integrated by field effect type thin-film cell and micro power supply Download PDFInfo
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- CN102683443A CN102683443A CN2012101128588A CN201210112858A CN102683443A CN 102683443 A CN102683443 A CN 102683443A CN 2012101128588 A CN2012101128588 A CN 2012101128588A CN 201210112858 A CN201210112858 A CN 201210112858A CN 102683443 A CN102683443 A CN 102683443A
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- 230000005669 field effect Effects 0.000 title claims abstract description 145
- 239000010409 thin film Substances 0.000 title claims abstract 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 27
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 15
- 238000000608 laser ablation Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 230000010354 integration Effects 0.000 claims description 11
- 239000003990 capacitor Substances 0.000 claims description 10
- 238000003475 lamination Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 8
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims 2
- 229910004613 CdTe Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 abstract 11
- 238000010329 laser etching Methods 0.000 abstract 1
- 239000002356 single layer Substances 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 12
- 239000011521 glass Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000005685 electric field effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 101000932768 Conus catus Alpha-conotoxin CIC Proteins 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
The invention provides a photovoltaic solar panel assembly integrated with a field effect type thin-film cell and a micro power supply. A plurality of thin film layers are deposited on a large carrier in sequence and configured into a plurality of strip-shaped single-section cell units by laser etching; anodes and cathodes of adjacent single-layer cell units are internally connected in series so as to form a field-effect thin-film photovoltaic cell including n single-section cell units connected in series as a main body and a field-effect power supply including 2n micro single-section cell units as an accessory body; in the field effect type thin-film photovoltaic solar panel assembly integrated on the carrier, the back electrode is replaced by a back grid electrode layer, and an insulating grid layer is added on the outer side of the back grid electrode layer; the photovoltaic solar panel assembly further comprises a field effect positive electrode layer and a field effect negative electrode layer, and is characterized in that, all single-section cell units are provided with a common field effect positive electrode layer or field effect negative electrode layer, wherein the field effect positive electrode layer or the field effect negative electrode layer is an integrative electrode layer. The photovoltaic solar panel assembly has the advantages that the converting efficiency and stability are greatly enhanced, the process is simple, the failure rate of the process is low and the cost is reduced.
Description
Technical field
The present invention relates to a kind of film photovoltaic cell, be specifically related to the integrated photovoltaic cell board component of a kind of field effect type hull cell and the little power supply integration of field effect, carry out integratedly, form field effect type film photovoltaic cell panel products construction package.
Background technology
The system of current known film photovoltaic cell comprises: silica-based, CIGS (CIGS), cadmium telluride (CdTe).The basic structure of these photovoltaic film batteries; All be to adopt p type semiconductor layer, n type semiconductor layer to form to have pn lamination spy seized with terror, and amorphous
lamination spy film photovoltaic cell seized with terror.
The special film photovoltaic cell plate structure seized with terror of amorphous
lamination is to adopt plasma reinforced chemical vapour deposition (PECVD); It is on glass that thin layer is deposited on the large tracts of land substrate successively; And realize the single hop battery unit of a plurality of strips with laser ablation; And between each single hop battery unit both positive and negative polarity each other at internal series-connection, formed film photovoltaic cell board component.
CIGS (CIGS) or cadmium telluride (CdTe) film photovoltaic cell plate are to adopt vacuum evaporation, magnetron sputtering etc.; Thin layer is deposited on the large tracts of land substrate carrier successively; And realize the single hop battery unit of a plurality of strips with laser ablation; And between each single hop battery unit both positive and negative polarity each other at internal series-connection, formed film photovoltaic cell board component.
Fig. 1-1, Fig. 1-2 are the concrete structures of single hop battery in the known film photovoltaic cell board component; Fig. 1-1 wherein; Be the concrete structure of known single hop amorphous silicon film photovoltaic battery, the 1.0th, amorphous silicon
lamination knot, the 1.1st, nesa coating tco layer, the 1.2nd, backplate layer; Fig. 1-2 is the concrete structure of single hop battery unit in known CIGS (CIGS) or cadmium telluride (CdTe) the film photovoltaic cell board component; 2.0 be CIGS (CIGS) or cadmium telluride (CdTe)
lamination knot, the 2.1st, backplate layer, the 2.2nd, nesa coating ZnO layer.
Fig. 2 (comprising: Fig. 2-1, Fig. 2-2, Fig. 2-3) is the three-view diagram of amorphous silicon membrane photovoltaic battery panel structure; The amorphous silicon film photovoltaic cell panel structure is by n A1 amorphous silicon film photovoltaic single hop battery 1, single hop battery 2, single hop battery 3 ... Single hop battery n connects at internal electric; Battery current collecting bus (series-connected cell is anodal) A3, battery current collecting bus (series-connected cell negative pole) A4, carrier glass A2 form.
Referring to Fig. 3-1, Fig. 3-2, be the corresponding cell section series circuit of the B-B profile figure of Fig. 2 amorphous silicon film photovoltaic cell panel structure; The single hop battery unit structure long for L, wide be D, the gap of laser ablation is arranged between the adjacent single hop battery; Each single hop battery is by nesa coating (TCO) 1.1, the output cathode of single hop battery;
Unijunction (
A-Si:H) 1.0; Backplate layer 1.2, the output negative pole of single hop battery is formed; A5 is the mutual both positive and negative polarity series connection of each a single hop battery contact-making surface; So current amorphous silicon film photovoltaic cell panel structure both at home and abroad is by n amorphous silicon film photovoltaic cell section, the assembly that makes up in the series connection of photovoltaic battery panel internal electric.
Patent application document (CN102064213A) discloses " a kind of extra electric field effect film photovoltaic cell and and the integrated photovoltaic battery panel of electric field source ", is called for short: the field effect photovoltaic battery panel; Each single hop battery is to adopt field effect amorphous silicon film photovoltaic battery in this field effect photovoltaic battery panel; Referring to Fig. 4-1 field effect
unijunction film photovoltaic cell structure, two these
the seized with terror unijunction film photovoltaic cell structures of Fig. 4-2 field effect; Wherein 10-1 and 20-1 are that TCO transparency conducting layer, 10-2 and 20-2 are that
unijunction layer, 10-3 and 20-3 are that backplate layer, 10-4 and 20-4 are that insulating barrier, 10-5 and 20-5 are the electric field layers; And single hop battery circuit symbol, G is an electric field layer tie point; The three-view diagram of this field effect photovoltaic cell plate structure; Referring to shown in Figure 5; Its principal character is: be made up of n field effect amorphous silicon film photovoltaic single hop battery C1.1, support C 1.2, series-connected cell output cathode C1.3, series-connected cell output negative pole C1.4, inner adjacent cell both positive and negative polarity joint face C1.5, electric field layer C1.6; And each single hop cell section (long for L, wide two ends for a) all be integrated with 3 (wide for b, longly be a) isostructural micro cell C1.7 of series connection and C1.8, C1.9 is that the electric field layer connects between the micro cell; Corresponding single hop battery of this field effect photovoltaic cell plate structure A-A profile and micro cell connecting circuit figure, shown in Fig. 6-1, corresponding each the single hop battery series connection connecting circuit figure of B-B profile is shown in Fig. 6-2; Among Fig. 6-1; The two ends of each field effect amorphous silicon film photovoltaic cell section; All be integrated with 3 isostructural micro cell group electric field power supplys of series connection, 3 series connection of right ends micro cell group is respectively Vb1+Vb2+Vb3=3Vb, Vb4+Vb5+Vb6=3Vb; And the positive pole and the negative pole of right ends series connection micro cell group; All be to be connected in parallel on this field effect amorphous silicon film photovoltaic cell section VLn (n=1,2,3 through electric field layer C1.6 and tco layer ... N), forming each field effect amorphous silicon film photovoltaic cell section VLn all has self integrated series connection micro cell group, constitutes the electric field power supply of this single hop battery; Among Fig. 6-2, the field effect amorphous silicon film photovoltaic single hop battery VLn of each charged field ionization source micro cell group, correspondence is connected in series and forms the establishment of field effect photovoltaic battery panel.
Patent application document (CN102064213A) discloses " a kind of extra electric field effect film photovoltaic cell and and the integrated photovoltaic battery panel of electric field source ", is called for short: the field effect photovoltaic battery panel; In laser ablation technology, etching n single hop battery, also to carry out 6 micro cells of meticulous laser ablation at each single hop battery, making laser ablation in technology, form the etching number is n * 6, causes the laser ablation cost to rise 6 times.
Summary of the invention
In order to improve film photovoltaic cell conversion efficiency and stability, simplify technology, the raising rate of finished products also reduces cost, and the present invention provides a kind of field effect type hull cell and the integrated photovoltaic cell board component of the little power supply integration of field effect.
The present invention discloses on the basis of " a kind of extra electric field effect film photovoltaic cell and and the integrated photovoltaic battery panel of electric field source " at patent application document (CN102064213A); Adopt and patent application document (CN102064213A) various structure mode, realize field effect film photovoltaic cell and the integrated photovoltaic cell board component of the little power-supply battery of field effect.
Realize that the object of the invention technical scheme is: the photovoltaic cell board component that a kind of field effect type hull cell and the little power supply integration of field effect are integrated; Its structure is: adopt on the carrier (substrate glass); Carry out plasma reinforced chemical vapour deposition (PECVD); Thin layer is deposited on the large tracts of land carrier (substrate glass) successively; And realize the single hop battery unit of a plurality of strips with laser ablation, and between the adjacent single hop battery unit both positive and negative polarity each other at internal series-connection, forming n single hop battery unit series connection is the little power supply of field effect that accessory body is connected for the field effect film photovoltaic cell of main body with the individual little single hop battery unit of 2n; Be integrated in the field effect film photovoltaic cell board component on the carrier (substrate glass); Simultaneously, the backplate in single junction cell structure, binode battery structure, three junction battery structures and two layer single junction cell structure originally seized with terror adopts back of the body grid electrode layer to substitute, and in the increase of the outside of this back of the body grid electrode layer insulated gate layer is arranged; And field effect positive electrode layer or field effect positive electrode layer, it is characterized in that all single hop battery units are provided with common field effect positive electrode layer or field effect positive electrode layer, this field effect positive electrode layer or field effect positive electrode layer are complete electrode layers.
Described field effect film photovoltaic cell plate is to adopt n field effect hull cell section, the cell panel that mutual connected in electrical series is formed in inside.In accompanying drawing 7, Fig. 7-the 2nd, the structure chart of single hop field effect type amorphous silicon unijunction film photovoltaic cell; 1-1 is that nesa coating tco layer, 1-2 are
A-Si:H(
) unijunction, 1-3 be that back of the body grid electrode layer, 1-4 are that insulated gate layer, 1-5 are the field effect positive electrode layers; Fig. 7-the 3rd, the structure chart of two these layer unijunction amorphous silicon film photovoltaic battery units seized with terror of single hop field effect type; 2-1 is that nesa coating tco layer, 2-2 are
A-Si:HWith
A-SiGe:H(
) unijunction, 2-3 be that back of the body grid electrode layer, 2-4 are that insulated gate layer, 2-5 are the field effect positive electrode layers; Figure E is the structure chart of single hop field effect type CIGS (CIGS) or cadmium telluride (CdTe) film photovoltaic cell unit; 3-1 be nesa coating ZnO layer, 3-2 be (
) knot, 3-3 be that back of the body grid electrode layer, 3-4 are that insulated gate layer, 3-5 are the field effect positive electrode layer.
On carrier, be integrated with DCn (n=1,2,3 ... N) series connection of individual single hop battery (is called for short: be that (abbreviation: 2n little power supply of connecting), and the output voltage of the little power supply of field effect of connecting is >=2nv (v is a single hop micro cell output voltage) the accessory body little power supply of field effect of connect with >=2n single hop a micro cell n section series connection main body battery) for the field effect film photovoltaic cell of main body; 2n series connection little power supply output cathode and negative pole are connected to the two ends P1 point and the Pn+1 point of n series capacitor; N section series connection main body battery (DCn section battery) transparency conducting layer TCO output cathode connects the Pn+1 point, also connects load RL simultaneously; N section series connection main body battery (DC1 section battery) back of the body grid electrode layer output negative pole connects load RL, and n section series connection main body battery (DC1 section battery) field effect positive electrode layer connects the P1 point; And n series capacitor C1 ... Cn is dividing point (voltage drop on each electric capacity) P2 each other ... Pn, correspondence is connected DC2 section battery ... The field effect positive electrode layer of DCn section battery.
On the field effect type film photovoltaic cell board component structure, also adapt to field effect CIGS (CIGS) and cadmium telluride (CdTe) film photovoltaic cell board component structure.
The present invention changed in the prior art each above the single hop battery unit or the following extra electric field electrode that is provided with respectively all be the configuration state that is provided with separately; This integrated film photovoltaic cell conversion efficiency and stability all are improved significantly.Simultaneously, because the extra electric field electrode (field effect positive electrode layer or field effect positive electrode layer) of film photovoltaic cell of the present invention is set to a complete electrode layer, so processing technology is simple; The process fault rate reduces (rate of finished products has improved 5%).Cost has reduced by 20% simultaneously.Solved still unsolved technical barrier in the prior art.
Description of drawings
The known silica-base film photovoltaic cell of Fig. 1-1 structure chart;
The known CIGS of Fig. 1-2 (CdTe) film photovoltaic cell structure chart;
Fig. 2-1, Fig. 2-2, Fig. 2-3 are the three-view diagram of known amorphous silicon film photovoltaic cell panel structure;
Fig. 3-1, Fig. 3-2 are the corresponding cell section series circuit of known amorphous silicon film photovoltaic cell panel B-B cutaway view figure;
Fig. 4-1 field effect
unijunction film photovoltaic cell structure;
Two these
the seized with terror unijunction film photovoltaic cell structures of Fig. 4-2 field effect;
Fig. 5-1, Fig. 5-2, Fig. 5-3 are the three-view diagram of field effect photovoltaic cell plate structure;
Fig. 6-1 is corresponding single hop battery of field effect photovoltaic battery panel A-A profile and micro cell connecting circuit figure;
Fig. 6-2 is corresponding each the single hop battery series connection connecting circuit figure of field effect photovoltaic battery panel B-B profile;
Fig. 7-2 is a single hop field effect type unijunction hull cell structure chart; Fig. 7-1 is two these unijunction hull cell structure charts seized with terror of field effect type; Fig. 7-3 is single hop field effect type CIGS or CdTe hull cell structure chart.
Fig. 8 is a field effect type silica-base film photovoltaic battery panel assembly circuit schematic diagram of the present invention;
Fig. 9-1, Fig. 9-2, Fig. 9-3 are the three-view diagram of field effect type amorphous silicon film photovoltaic battery panel components structure of the present invention;
Figure 10 is a field effect type amorphous silicon film photovoltaic cell panel B-B cutaway view of the present invention.
Embodiment
Shown in accompanying drawing 9 (comprising Fig. 9-1, Fig. 9-2, Fig. 9-3); In order to realize the three-view diagram of embodiment of the invention field effect type amorphous silicon film photovoltaic battery board component: be to adopt on the carrier (glass) in the accompanying drawing 9; Carry out plasma reinforced chemical vapour deposition (PECVD); It is on glass that thin layer is deposited on the large tracts of land substrate successively; And realize the single hop battery unit of a plurality of strips with laser ablation; And between the adjacent single hop battery unit both positive and negative polarity each other at internal series-connection, forming the series connection of n single hop battery is the little power supply of field effect that accessory body is connected for the field effect film photovoltaic cell of main body with the individual little single hop battery of 2n, is integrated in the field effect film photovoltaic cell board component of (glass) on the carrier.
Wherein B1 is a carrier (glass) plate; B2 is the two intrinsic unijunction film photovoltaic cell unit of single hop field effect type amorphous silicon; The technology that adopts is that ion strengthens chemical vapour deposition (CVD) (PECVD); It is on glass that thin layer is deposited on the large tracts of land substrate successively; Use laser ablation form wide as D, long be L single hop DC1 ... DCn battery unit and a technology linkage section unit, inner both positive and negative polarity each other is composed in series field effect film photovoltaic cell plate; B3 is the output afflux terminal positive pole that is composed in series the field effect film photovoltaic cell, and B4 is the output afflux terminal negative pole that is composed in series the field effect film photovoltaic cell; Further adopt laser ablation or graduating with cutter etching technique at established field effect film photovoltaic cell face; Etching deposition lamination forms B9, B10 isolation channel crack; Make about the field effect film photovoltaic cell board component; Each form n long for d1, widely be the micro cell WC1 of D ... Micro cell WCn with long for d2, wide be D micro cell WCn+1 ... WC2n; B5 is n the micro cell WC1 that connects with B6 ... The positive pole and the negative pole of micro cell WCn output afflux terminal, B7 is n the micro cell WCn+1 that connects with B8 ... The positive pole and the negative pole of micro cell WC2n output afflux terminal carry out external electrical with B5 and B8 and are connected; Form the series connection of 2n micro cell up and down, by B7 and B6 as positive pole and the negative pole of exporting the afflux terminal; Finally make on a carrier of B1 (glass) plate; Integrated formation is wide to be D, the long K of being; N battery DC1, battery DC2 ... Battery DCn units in series is the field effect film photovoltaic cell of main body, with 2n micro cell WC1, micro cell WC2---micro cell WC2n units in series be the little power supply of field effect of accessory body.
On the embodiment of the invention field effect type amorphous silicon film photovoltaic battery plate; In laser ablation technology, etching n single hop battery, and adopt simple graduating with cutter etching technique twice; Etch the deposition lamination and form B9, B10 twice isolation channel crack; Field effect film photovoltaic cell and two field effect micro cells that series connection is an accessory body that formation is main body with a series connection of spline structure, it is constant to make laser ablation etching in technology count n, and the etching technics cost does not have to improve basically.
In each battery unit and the micro cell unit, back of the body grid electrode layer 2-3 has the strip window among accompanying drawing 9-1, Fig. 9-2, Fig. 9-3, and the strip window is referring to back of the body grid electrode layer cutaway view among the figure; Field effect film photovoltaic cell board component B-B cutaway view is referring to shown in the accompanying drawing 10.
Claims (5)
1. field effect type hull cell and the integrated photovoltaic cell board component of the little power supply integration of field effect; Its structure is: adopt on the carrier; Carry out plasma reinforced chemical vapour deposition, thin layer is deposited on the large tracts of land carrier successively, and realize the single hop battery unit of a plurality of strips with laser ablation; And between the adjacent single hop battery unit both positive and negative polarity each other at internal series-connection; Forming the series connection of n single hop battery unit is the little power supply of field effect that accessory body is connected for the field effect film photovoltaic cell of main body with the individual little single hop battery unit of 2n, is integrated in a field effect film photovoltaic cell board component on the carrier, simultaneously; Backplate in single junction cell structure, binode battery structure, three junction battery structures and two this layer single junction cell structure seized with terror adopts back of the body grid electrode layer to substitute; And increase in the outside of this back of the body grid electrode layer insulated gate layer is arranged, and field effect positive electrode layer or field effect positive electrode layer, it is characterized in that; All single hop battery units are provided with common field effect positive electrode layer or field effect positive electrode layer, and this field effect positive electrode layer or field effect positive electrode layer are complete electrode layers.
2. the photovoltaic cell board component that field effect type hull cell according to claim 1 and the little power supply integration of field effect are integrated; It is characterized in that; In the integrated photovoltaic cell board component of described field effect type hull cell and the little power supply integration of field effect; The single hop battery unit structure can be a lamination
P-i-nUnijunction or many knots,
P-i-nUnijunction is by nesa coating tco layer, (a-Si:H)
P-i-nUnijunction, back of the body grid electrode layer, insulated gate layer, field effect positive electrode layer are formed; The structure of two these layer unijunction amorphous silicon film photovoltaic battery units seized with terror of single hop field effect type is by nesa coating tco layer, (a-Si:H and a-SiGe:H)
P-i-nUnijunction, back of the body grid electrode layer, insulated gate layer, field effect positive electrode layer are formed; The structure of single hop field effect type CIGS CIGS or cadmium telluride CdTe film photovoltaic cell unit, be by nesa coating ZnO layer,
PnKnot, back of the body grid electrode layer, insulated gate layer, field effect positive electrode layer are formed.
3. the photovoltaic cell board component that field effect type hull cell according to claim 1 and the little power supply integration of field effect are integrated; It is characterized in that; Described field effect type CIGS and Cadimium telluride thin film photovoltaic cell structure, its structure is: by nesa coating,
knot, back of the body grid electrode layer, insulated gate layer, the combination of field effect positive electrode layer.
4. according to described field effect type hull cell of claim 1 ~ 3 and the integrated photovoltaic cell board component of the little power supply integration of field effect; It is characterized in that; On carrier, be integrated with the series connection of n single hop battery for the field effect film photovoltaic cell of main body with >=a 2n single hop micro cell is the little power supply of field effect that accessory body is connected, and the output voltage of the little power supply of field effect of connecting is >=2nv; V is a single hop micro cell output voltage, and little power supply output cathode of field effect and negative pole are connected to the two ends of n series capacitor; The little power supply output cathode of field effect also is connected field effect film photovoltaic cell output negative pole, the field effect positive electrode layer of corresponding single hop battery unit; The little power supply output negative pole of field effect also is connected field effect film photovoltaic cell output cathode, the transparency conducting layer TCO of corresponding single hop battery unit; And n series capacitor C1 ... Cn is dividing point each other, and correspondence is connected single hop battery 2 ... The field effect positive electrode layer of battery n.
5. according to described field effect type hull cell of claim 1 ~ 4 and the integrated photovoltaic cell board component of the little power supply integration of field effect; It is characterized in that; On the said field effect type film photovoltaic cell board component structure, also adapt to field effect CIGS and Cadimium telluride thin film photovoltaic battery panel modular construction.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210112858.8A CN102683443B (en) | 2012-04-17 | 2012-04-17 | Photovoltaic solar panel assembly integrated by field effect type thin-film cell and micro power supply |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210112858.8A CN102683443B (en) | 2012-04-17 | 2012-04-17 | Photovoltaic solar panel assembly integrated by field effect type thin-film cell and micro power supply |
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| CN102683443B CN102683443B (en) | 2014-12-10 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105515164A (en) * | 2016-01-27 | 2016-04-20 | 京东方科技集团股份有限公司 | Power supply module and electronic device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102064213A (en) * | 2009-10-14 | 2011-05-18 | 郭建国 | External electric field effect film photovoltaic battery and photovoltaic battery board integrated with electric field sources |
| CN202026257U (en) * | 2011-05-03 | 2011-11-02 | 大连皿能光电科技有限公司 | Minitype solar power supply system |
-
2012
- 2012-04-17 CN CN201210112858.8A patent/CN102683443B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102064213A (en) * | 2009-10-14 | 2011-05-18 | 郭建国 | External electric field effect film photovoltaic battery and photovoltaic battery board integrated with electric field sources |
| CN202026257U (en) * | 2011-05-03 | 2011-11-02 | 大连皿能光电科技有限公司 | Minitype solar power supply system |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105515164A (en) * | 2016-01-27 | 2016-04-20 | 京东方科技集团股份有限公司 | Power supply module and electronic device |
| CN105515164B (en) * | 2016-01-27 | 2018-04-13 | 京东方科技集团股份有限公司 | Power supply module and electronic equipment |
| US10284005B2 (en) | 2016-01-27 | 2019-05-07 | Boe Technology Group Co., Ltd. | Power supply assembly and electronic device |
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| CN102683443B (en) | 2014-12-10 |
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