CN102681218B - Acoustooptic device made of alloy material - Google Patents
Acoustooptic device made of alloy material Download PDFInfo
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- CN102681218B CN102681218B CN201210176147.7A CN201210176147A CN102681218B CN 102681218 B CN102681218 B CN 102681218B CN 201210176147 A CN201210176147 A CN 201210176147A CN 102681218 B CN102681218 B CN 102681218B
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Abstract
An acoustooptic device made of alloy material comprises an acoustooptic medium and a transducer between which two electrode layers are mounted, wherein a bonding layer is mounted between the two electrode layers; a meter electrode is mounted on the input end surface of the transducer; and the bonding layer is made of tin-silver-indium alloy or tin-indium alloy, as for the tin-silver-indium alloy, the mass percent of tin is 80-90 percent, the silver is 2-12 percent, and the indium is 3-13 percent, whereas as for the tin-indium alloy, the tin is 85-95 percent, the indium is 5-15 percent. According to the acoustooptic device provided by the invention, the tin alloy replaces pure tin to serve as the material of the bonding layer, so that the problem of 'grey tin' at a low temperature is avoided; and besides, the problem of 'tin whisker' due to long-time use or storage of the device is also avoided. Therefore, the acoustooptic device is stable in performance at the lower temperature.
Description
Technical field
The present invention relates to acousto-optical device, relate in particular to a kind of laser system use and be applicable to the acousto-optical device of working at low temperatures for a long time.
Background technology
Acousto-optical device is a kind of ultrasound wave generation acoustic optic interaction of utilizing incident light and transducer, obtains diffraction light.The energy of diffraction light shifts and comes from incident light.
Making when acousto-optical device, for by transducer together with acousto-optic medium welding, between acousto-optic medium and transducer, used two-layer electrode layer and one deck bonded layer.Electrode layers thickness is about 50nm, conventionally make (being chromium film) with High Pure Chromium, it belongs to acoustics thin layer, loss to sound wave is very little, negligible, but chromium film can with a lot of nonmetallic materials adhesion-tights including lithium niobate and tellurium oxide, can improve bonded layer by chromium film and be attached to the adhesion on acousto-optic medium and transducer.Bonded layer is thicker, and using the object of bonded layer is that acousto-optic medium and transducer are welded together, and the ultrasound wave that simultaneously allows transducer produce is transferred in acousto-optic medium smoothly.
Bonded layer adopts pure tin conventionally.Pure tin long-term storage there will be gray tin problem in the environment lower than 13.2 ℃, has been transformed into mutually α-Sn phase from β-Sn.The crystalline network of α-Sn phase is the same with Si, it is a kind of semiconductor rather than metal, and there is intrinsic fragility, and then lose its use value, it is exactly " tinplague " that we often say that gray tin changes, and the acousto-optical device that therefore uses pure tin to do bonded layer is not suitable for depositing at low temperatures for a long time and working.
Make bonded layer material with pure tin, in long time stored or use procedure, on bonded layer, can spontaneously grow the filiform that some similar beards are the same, industry is referred to as " tin palpus ".The growth of tin palpus usually can make short circuit between transistor pin and cause component failure.No. 4 satellites of the milky way of for example U.S. are because tin in its internal circuit must short circuit cause its disabler.Therefore, use pure tin to do the acousto-optical device of bonded layer, along with depositing or the increase of working time, the risk of its inefficacy also increases thereupon.
Summary of the invention
For the problems referred to above, the invention provides and be a kind ofly applicable to depositing at low temperatures for a long time and the acousto-optical device of steady operation.
To achieve these goals, the technical solution used in the present invention is as follows:
Use the acousto-optical device of alloy material, comprise acousto-optic medium and transducer, between this acousto-optic medium and transducer, electrode layer is installed, this electrode layer is two-layer, between this two-layer electrode layer, bonded layer is installed, table electrode is installed on described transducer input end face, is it is characterized in that, the material of described bonded layer is tin indium silver alloy or tin-indium alloy.
In described tin indium silver alloy, the mass percent of tin is 80%～90%, and the mass percent of silver is 2%～12%, and the mass percent of indium is 3～13%.
In described tin-indium alloy, the mass percent of tin is 85%～95%, and the mass percent of indium is 5%～15%.
The thickness of described bonded layer is 1 micron～5 microns.
The material of described acousto-optic medium is tellurium oxide crystal, GaP crystal, indium phosphide crystal, Crystals of Lead Molybdate, lithium columbate crystal, quartz crystalline substance, melts quartz or dense flint glass.
Described transducer material is lithium columbate crystal.
Good effect of the present invention:
Adopt ashbury metal to replace the bonded layer material of pure tin as acousto-optical device, avoid occurring at low temperatures " gray tin " problem; The problem of simultaneously also having avoided producing " tin palpus " in long time stored or use procedure, under low temperature, acousto-optical device is stable and reliable for performance.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in further detail.
As shown in Figure 1, use the acousto-optical device of alloy material, comprise acousto-optic medium 1 and transducer 4, between this acousto-optic medium 1 and transducer 4, electrode layer 2 is installed, this electrode layer 2 is two-layer, between this two-layer electrode layer 2, bonded layer 3 is installed, table electrode 5 is installed on described transducer 4 input end faces, the material of bonded layer 3 is tin indium silver alloy or tin-indium alloy.
Through analysis of experiments, tin indium silver alloy and tin-indium alloy are best suited for doing the alloy material of bonded layer 3.In tin indium silver alloy, the mass percent of tin is 80%～90%, and the mass percent of silver is 2%～12%, and the mass percent of indium is 3～13%.In described tin-indium alloy, the mass percent of tin is 85%～95%, and the mass percent of indium is 5%～15%.
As preferentially, in tin indium silver alloy, the mass percent of tin is 85%, and the mass percent of silver is 7%, and the mass percent of indium is 8%; In tin-indium alloy, the mass percent of tin is 90%, and the mass percent of indium is 10%.
The material of described acousto-optic medium 1 is tellurium oxide crystal, GaP crystal, indium phosphide crystal, Crystals of Lead Molybdate, lithium columbate crystal, quartz crystalline substance, melts quartz or dense flint glass.
Transducer 4 is selected the material with piezoelectric effect: lithium columbate crystal.
The sound wave that transducer 4 produces will be by bonded layer 3 to the interior transmission of acousto-optic medium 1, and the efficiency of transmission is relevant with the thickness of bonded layer 3.Bonded layer 3 is too thick, hinders the transmission of sound wave, and bonded layer 3 is too thin, transducer 4 can not be welded on acousto-optic medium 1 securely; Under normal circumstances, the THICKNESS CONTROL of bonded layer 3 is proper in 1 micron～5 micrometer ranges.
Embodiment: we utilize tin indium silver alloy to make an acousto-optic turnable filter as bonded layer 3, acousto-optic medium 1 uses tellurium oxide crystal, electrode layer 2 uses chromium film, bonded layer 3 uses tin indium silver alloy, transducer 4 uses lithium columbate crystal, the thickness of transducer 4 is 20 microns, and the thickness of bonded layer 3 is 2 microns.The radiofrequency signal of 200MHz is added on transducer 4 through table electrode 5, and transducer 4 produces the sound wave of 200MHz, and sound wave is transferred in acousto-optic medium 1 by bonded layer 3, at the interior formation ultrasound wave 6 of acousto-optic medium 1.There is acoustic optic interaction and produce diffraction light in incident light and ultrasound wave 6.This acousto-optic turnable filter is deposited after 300h under low temperature (50 ℃), and " gray tin " phenomenon does not occur in stable performance.Long-time use deposited, and also do not occur the problem of " tin palpus ".
Adopt ashbury metal to replace the bonded layer material of pure tin as acousto-optical device, " gray tin " problem can not occur at low temperatures; The problem of also having avoided producing " tin palpus " compared with existing pure tin in long time stored or use procedure, under low temperature, acousto-optical device is stable and reliable for performance, is convenient to be applied on the device under various low-temperature working conditions.
The above embodiment of the present invention is to be only explanation example of the present invention, and is not the restriction to embodiments of the present invention.For those of ordinary skill in the field, can also make on the basis of the above description other multi-form variation and variations.Here cannot give exhaustive to all embodiments.Everyly belong to apparent variation or the still row in protection scope of the present invention of variation that technical scheme of the present invention amplifies out.
Claims (4)
1. use the acousto-optical device of alloy material, comprise acousto-optic medium (1) and transducer (4), between this acousto-optic medium (1) and transducer (4), electrode layer (2) is installed, this electrode layer (2) is two-layer, between this two-layer electrode layer (2), bonded layer (3) is installed, table electrode (5) is installed on described transducer (4) input end face, is it is characterized in that, the material of described bonded layer (3) is tin indium silver alloy; In described tin indium silver alloy, the mass percent of tin is 80%～90%, and the mass percent of silver is 2%～12%, and the mass percent of indium is 3%～13%.
2. acousto-optical device according to claim 1, is characterized in that, the thickness of described bonded layer (3) is 1 micron～5 microns.
3. acousto-optical device according to claim 1, is characterized in that, the material of described acousto-optic medium (1) be tellurium oxide crystal, GaP crystal, indium phosphide crystal, Crystals of Lead Molybdate, lithium columbate crystal, quartz brilliant, melt quartz or dense flint glass.
4. acousto-optical device according to claim 1, is characterized in that, described transducer (4) material is lithium columbate crystal.
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| CN201210176147.7A CN102681218B (en) | 2012-05-31 | 2012-05-31 | Acoustooptic device made of alloy material |
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| CN201210176147.7A CN102681218B (en) | 2012-05-31 | 2012-05-31 | Acoustooptic device made of alloy material |
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| CN102681218B true CN102681218B (en) | 2014-05-28 |
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| CN103116227A (en) * | 2013-01-30 | 2013-05-22 | 福建福晶科技股份有限公司 | Acousto-optic device enabling packaging quality to be easy to detect |
| CN103311795B (en) * | 2013-06-18 | 2015-05-13 | 中国电子科技集团公司第二十六研究所 | Two-dimensional acousto-optic q-switch |
| CN104597632B (en) * | 2015-01-29 | 2017-09-01 | 中国电子科技集团公司第二十六研究所 | Large aperture acousto-optical device |
| CN105629524A (en) * | 2016-03-25 | 2016-06-01 | 福州腾景光电科技有限公司 | Array acoustic optical modulator and manufacturing method thereof |
| CN108107610B (en) * | 2017-12-27 | 2021-04-13 | 中国电子科技集团公司第二十六研究所 | Large aperture acousto-optic tunable filter |
| CN112485932B (en) * | 2020-11-24 | 2022-12-13 | 光奥科技（武汉）有限公司 | High-frequency acousto-optic device and preparation method thereof |
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| CN2061700U (en) * | 1990-01-13 | 1990-09-05 | 北京工业大学 | Acousto-optical device of new-type radiator |
| JP2006009039A (en) * | 2004-06-21 | 2006-01-12 | Rambo Chemicals (Hong Kong) Ltd | Tin based plating film in which growth of whisker is suppressed and forming method therefor |
| CN101712028B (en) * | 2009-11-13 | 2012-02-01 | 中国科学院声学研究所 | Thin-film ultrasonic transducer and preparation method thereof |
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