CN102681218A - Acoustooptic device made of alloy material - Google Patents
Acoustooptic device made of alloy material Download PDFInfo
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- CN102681218A CN102681218A CN2012101761477A CN201210176147A CN102681218A CN 102681218 A CN102681218 A CN 102681218A CN 2012101761477 A CN2012101761477 A CN 2012101761477A CN 201210176147 A CN201210176147 A CN 201210176147A CN 102681218 A CN102681218 A CN 102681218A
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Abstract
An acoustooptic device made of alloy material comprises an acoustooptic medium and a transducer between which two electrode layers are mounted, wherein a bonding layer is mounted between the two electrode layers; a meter electrode is mounted on the input end surface of the transducer; and the bonding layer is made of tin-silver-indium alloy or tin-indium alloy, as for the tin-silver-indium alloy, the mass percent of tin is 80-90 percent, the silver is 2-12 percent, and the indium is 3-13 percent, whereas as for the tin-indium alloy, the tin is 85-95 percent, the indium is 5-15 percent. According to the acoustooptic device provided by the invention, the tin alloy replaces pure tin to serve as the material of the bonding layer, so that the problem of 'grey tin' at a low temperature is avoided; and besides, the problem of 'tin whisker' due to long-time use or storage of the device is also avoided. Therefore, the acoustooptic device is stable in performance at the lower temperature.
Description
Technical field
The present invention relates to acousto-optical device, relate in particular to the acousto-optical device that a kind of laser system is used and is fit to work at low temperatures for a long time.
Background technology
Acousto-optical device is a kind of ultrasound wave generation acoustic optic interaction of utilizing incident light and transducer, obtains diffraction light.The energy of diffraction light shifts from incident light and comes.
When making acousto-optical device,, two-layer electrode layer and one deck bonded layer between acousto-optic medium and transducer, have been used for transducer and acousto-optic medium welding are in the same place.Electrode layers thickness is about 50nm; Usually make (being the chromium film) with high-purity chromium; It belongs to the acoustics thin layer, and is very little to the loss of sound wave, can ignore; But the chromium film can with a lot of nonmetallic materials adhesion-tights that comprise lithium niobate and tellurium oxide, can improve bonded layer attached to the adhesion on acousto-optic medium and the transducer through the chromium film.Bonded layer is thicker, and using the purpose of bonded layer is to weld together acousto-optic medium and transducer, and the ultrasound wave that lets transducer produce simultaneously is transferred in the acousto-optic medium smoothly.
Bonded layer adopts pure tin usually.The pure tin long-term storage gray tin problem can occur in being lower than 13.2 ℃ environment, promptly be transformed into α-Sn phase mutually from β-Sn.The crystalline network of α-Sn phase is the same with Si; It is a kind of semiconductor rather than metal; And has intrinsic fragility; And then lost its use value, it is exactly " tinplague " that our institute often says that gray tin changes, so the acousto-optical device that uses pure tin to do bonded layer is not suitable for depositing at low temperatures for a long time and working.
Make the bonded layer material with pure tin, in long time stored or use, the spontaneous the same filiform of some similar beards that grows of meeting on the bonded layer, industry is referred to as " tin palpus ".The growth of tin palpus usually can make short circuit between the transistor pin and cause component failure.For example No. 4 satellites of the milky way of the U.S. are owing to tin in its internal circuit must short circuit cause its disabler.Therefore, use pure tin to do the acousto-optical device of bonded layer, along with depositing or the increase of working time, the risk of its inefficacy also increases thereupon.
Summary of the invention
To the problems referred to above, the present invention provides a kind of acousto-optical device that is fit to deposit at low temperatures for a long time with steady operation.
To achieve these goals, the technical scheme of the present invention's employing is following:
Use the acousto-optical device of alloy material; Comprise acousto-optic medium and transducer, between this acousto-optic medium and transducer, electrode layer is installed, this electrode layer is two-layer; Between this two-layer electrode layer, bonded layer is installed; The table electrode is installed on the said transducer input end face, is it is characterized in that the material of said bonded layer is tin indium silver alloy or tin-indium alloy.
In the said tin indium silver alloy, the mass percent of tin is 80%～90%, and the mass percent of silver is 2%～12%, and the mass percent of indium is 3～13%.
In the said tin-indium alloy, the mass percent of tin is 85%～95%, and the mass percent of indium is 5%～15%.
The thickness of said bonded layer is 1 micron～5 microns.
The material of said acousto-optic medium is tellurium oxide crystal, gallium phosphide crystal, indium phosphide crystal, lead molybdate crystal, lithium columbate crystal, quartzy crystalline substance, melts quartz or dense flint glass.
Said transducer material is a lithium columbate crystal.
Good effect of the present invention:
Adopt ashbury metal to replace the bonded layer material of pure tin, avoid taking place at low temperatures " gray tin " problem as acousto-optical device; Also avoided in long time stored or use, producing the problem of " tin palpus " simultaneously, acousto-optical device is stable and reliable for performance under the low temperature.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Embodiment
Below in conjunction with specific embodiment the present invention is done further explain.
As shown in Figure 1; Use the acousto-optical device of alloy material, comprise acousto-optic medium 1 and transducer 4, between this acousto-optic medium 1 and transducer 4, electrode layer 2 is installed; This electrode layer 2 is two-layer; Between this two-layer electrode layer 2, bonded layer 3 is installed, table electrode 5 is installed on said transducer 4 input end faces, the material of bonded layer 3 is tin indium silver alloy or tin-indium alloy.
Through analysis of experiments, tin indium silver alloy and tin-indium alloy are best suited for doing the alloy material of bonded layer 3.In the tin indium silver alloy, the mass percent of tin is 80%～90%, and the mass percent of silver is 2%～12%, and the mass percent of indium is 3～13%.In the said tin-indium alloy, the mass percent of tin is 85%～95%, and the mass percent of indium is 5%～15%.
As preferentially, in the tin indium silver alloy, the mass percent of tin is 85%, and the mass percent of silver is 7%, and the mass percent of indium is 8%; In the tin-indium alloy, the mass percent of tin is 90%, and the mass percent of indium is 10%.
The material of said acousto-optic medium 1 is tellurium oxide crystal, gallium phosphide crystal, indium phosphide crystal, lead molybdate crystal, lithium columbate crystal, quartzy crystalline substance, melts quartz or dense flint glass.
Transducer 4 is selected the material with piezoelectric effect for use: lithium columbate crystal.
The sound wave that transducer 4 produces will transmit in acousto-optic medium 1 through bonded layer 3, and the efficient of transmission is relevant with the thickness of bonded layer 3.Bonded layer 3 is too thick, hinders the transmission of sound wave, and bonded layer 3 is too thin, can not transducer 4 be welded on the acousto-optic medium 1 securely; Generally, the THICKNESS CONTROL of bonded layer 3 is more suitable in 1 micron～5 micrometer ranges.
Embodiment: we utilize tin indium silver alloy to make an acousto-optic turnable filter as bonded layer 3; Acousto-optic medium 1 uses tellurium oxide crystal; Electrode layer 2 uses the chromium film, and bonded layer 3 uses tin indium silver alloy, and transducer 4 uses lithium columbate crystal; The thickness of transducer 4 is 20 microns, and the thickness of bonded layer 3 is 2 microns.The radiofrequency signal of 200MHz is added on the transducer 4 through table electrode 5, and transducer 4 produces the sound wave of 200MHz, and sound wave is transferred in the acousto-optic medium 1 through bonded layer 3, in acousto-optic medium 1, forms ultrasound wave 6.Acoustic optic interaction takes place and produces diffraction light in incident light and ultrasound wave 6.This acousto-optic turnable filter is after depositing 300h under the low temperature (50 ℃), and " gray tin " phenomenon does not take place in stable performance.The long-time use deposited, and also do not have to occur the problem of " tin palpus ".
Adopt ashbury metal to replace the bonded layer material of pure tin, " gray tin " problem can not take place at low temperatures as acousto-optical device; Compare the problem of also having avoided in long time stored or use, producing " tin palpus " with existing pure tin, acousto-optical device is stable and reliable for performance under the low temperature, is convenient to be applied on the device under the various low-temperature working conditions.
The above embodiment of the present invention only be for explanation the present invention did for example, and be not to be qualification to embodiment of the present invention.For the those of ordinary skill in affiliated field, on the basis of above-mentioned explanation, can also make other multi-form variation and changes.Here can't give exhaustive to all embodiments.Everyly belong to the row that conspicuous variation that technical scheme of the present invention amplifies out or change still are in protection scope of the present invention.
Claims (6)
1. use the acousto-optical device of alloy material; Comprise acousto-optic medium (1) and transducer (4), between this acousto-optic medium (1) and transducer (4), electrode layer (2) is installed, this electrode layer (2) is two-layer; Between this two-layer electrode layer (2), bonded layer (3) is installed; Table electrode (5) is installed on said transducer (4) input end face, is it is characterized in that the material of said bonded layer (3) is tin indium silver alloy or tin-indium alloy.
2. according to the said acousto-optical device of claim 1, it is characterized in that in the said tin indium silver alloy, the mass percent of tin is 80%～90%, the mass percent of silver is 2%～12%, and the mass percent of indium is 3%～13%.
3. according to the said acousto-optical device of claim 1, it is characterized in that in the said tin-indium alloy, the mass percent of tin is 85%～95%, the mass percent of indium is 5%～15%.
4. according to the said acousto-optical device of claim 1, it is characterized in that the thickness of said bonded layer (3) is 1 micron～5 microns.
5. according to the said acousto-optical device of claim 1, it is characterized in that the material of said acousto-optic medium (1) is tellurium oxide crystal, gallium phosphide crystal, indium phosphide crystal, lead molybdate crystal, lithium columbate crystal, quartzy crystalline substance, melts quartz or dense flint glass.
6. according to the said acousto-optical device of claim 1, it is characterized in that said transducer (4) material is a lithium columbate crystal.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210176147.7A CN102681218B (en) | 2012-05-31 | 2012-05-31 | Acoustooptic device made of alloy material |
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| CN201210176147.7A CN102681218B (en) | 2012-05-31 | 2012-05-31 | Acoustooptic device made of alloy material |
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| CN102681218B CN102681218B (en) | 2014-05-28 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103116227A (en) * | 2013-01-30 | 2013-05-22 | 福建福晶科技股份有限公司 | Acousto-optic device enabling packaging quality to be easy to detect |
| CN103311795A (en) * | 2013-06-18 | 2013-09-18 | 中国电子科技集团公司第二十六研究所 | Two-dimensional acousto-optic q-switch |
| CN104597632A (en) * | 2015-01-29 | 2015-05-06 | 中国电子科技集团公司第二十六研究所 | Large-aperture acousto-optical device |
| CN105629524A (en) * | 2016-03-25 | 2016-06-01 | 福州腾景光电科技有限公司 | Array acoustic optical modulator and manufacturing method thereof |
| CN108107610A (en) * | 2017-12-27 | 2018-06-01 | 中国电子科技集团公司第二十六研究所 | Large aperture acousto-optic turnable filter |
| CN112485932A (en) * | 2020-11-24 | 2021-03-12 | 光奥科技（武汉）有限公司 | High-frequency acousto-optic device and preparation method thereof |
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| CN2061700U (en) * | 1990-01-13 | 1990-09-05 | 北京工业大学 | Acousto-optical device of new-type radiator |
| CN1969064A (en) * | 2004-06-21 | 2007-05-23 | 永保化工（香港）有限公司 | Tin-based plating film and method for forming the same |
| CN101712028A (en) * | 2009-11-13 | 2010-05-26 | 中国科学院声学研究所 | Thin-film ultrasonic transducer and preparation method thereof |
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2012
- 2012-05-31 CN CN201210176147.7A patent/CN102681218B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2061700U (en) * | 1990-01-13 | 1990-09-05 | 北京工业大学 | Acousto-optical device of new-type radiator |
| CN1969064A (en) * | 2004-06-21 | 2007-05-23 | 永保化工（香港）有限公司 | Tin-based plating film and method for forming the same |
| CN101712028A (en) * | 2009-11-13 | 2010-05-26 | 中国科学院声学研究所 | Thin-film ultrasonic transducer and preparation method thereof |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103116227A (en) * | 2013-01-30 | 2013-05-22 | 福建福晶科技股份有限公司 | Acousto-optic device enabling packaging quality to be easy to detect |
| CN103311795A (en) * | 2013-06-18 | 2013-09-18 | 中国电子科技集团公司第二十六研究所 | Two-dimensional acousto-optic q-switch |
| CN103311795B (en) * | 2013-06-18 | 2015-05-13 | 中国电子科技集团公司第二十六研究所 | Two-dimensional acousto-optic q-switch |
| CN104597632A (en) * | 2015-01-29 | 2015-05-06 | 中国电子科技集团公司第二十六研究所 | Large-aperture acousto-optical device |
| CN104597632B (en) * | 2015-01-29 | 2017-09-01 | 中国电子科技集团公司第二十六研究所 | Large aperture acousto-optical device |
| CN105629524A (en) * | 2016-03-25 | 2016-06-01 | 福州腾景光电科技有限公司 | Array acoustic optical modulator and manufacturing method thereof |
| CN108107610A (en) * | 2017-12-27 | 2018-06-01 | 中国电子科技集团公司第二十六研究所 | Large aperture acousto-optic turnable filter |
| CN108107610B (en) * | 2017-12-27 | 2021-04-13 | 中国电子科技集团公司第二十六研究所 | Large aperture acousto-optic tunable filter |
| CN112485932A (en) * | 2020-11-24 | 2021-03-12 | 光奥科技（武汉）有限公司 | High-frequency acousto-optic device and preparation method thereof |
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|---|---|
| CN102681218B (en) | 2014-05-28 |
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