CN102668059B - Vacuum chuck - Google Patents
Vacuum chuck Download PDFInfo
- Publication number
- CN102668059B CN102668059B CN201080054148.3A CN201080054148A CN102668059B CN 102668059 B CN102668059 B CN 102668059B CN 201080054148 A CN201080054148 A CN 201080054148A CN 102668059 B CN102668059 B CN 102668059B
- Authority
- CN
- China
- Prior art keywords
- absorption layer
- absorbate
- vacuum chuck
- hole
- absorption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Abstract
The invention provides a kind of vacuum chuck utilizing the absorption affinity required by vacuum chuck reliably to adsorb the absorbate of the part being placed in adsorption plane.Vacuum chuck, using atmospheric pressure as (P1), using the minimum absorption affinity required by vacuum chuck as (Fmin), rear side is (Pu) by limiting pressure, exhaust efficiency is the absorption layer of the vacuum pump attraction of (Se), the conductivity (C) that per surface sum as absorption layer is exposed to the absorption layer entirety that the aperture opening ratio (n) of the ratio of total aperture area of the through hole in this per surface area and multiple through hole cause meets following formula: Fmin≤n (P1-Pu) Se/ (Se+C), even if this vacuum chuck is from a part of leakage air of the unlapped absorption layer of absorbate, also the absorption affinity of more than (Fmin) is utilized reliably to adsorb maintenance absorbate.
Description
Technical field
The present invention relates to and by vacuum pump, airtight rear side is reduced pressure, via many through holes, the absorbate be placed on the surface of absorption layer is adsorbed and the vacuum chuck of locating, more specifically, even if relate to when a part for adsorption plane is not covered by absorbate, also can the vacuum chuck of adsorbate.
Background technology
By vacuum pump rear side reduced pressure relative to attracting the surface of the absorption layer of absorbate and attracting via the through hole be communicated with the back side with surface and keep in the vacuum chuck of the absorbate of manipulating object, be necessary atmospheric pressure relative to face side and the back pressure of rear side is maintained the pressure close to vacuum.Such vacuum chuck also exists such problem: if absorbate does not cover the surface integral as adsorption plane, so, a part for through hole is opened on surface, extraneous gas is flowed into by through hole, do not obtain the differential pressure of face side and rear side fully, thus can not get the absorption affinity specified.
So, by patent documentation 1, patent documentation 2, knownly a kind ofly make the many through holes be communicated with rear side with the face side of absorption layer become thin footpath and make the vacuum chuck that the conductivity of through hole entirety declines.According to this existing vacuum chuck, even if the through hole of a part is not covered by absorbate, but be opened on surface, also limit the flow being flowed to rear side by through hole from surface, the differential pressure of face side and rear side can be maintained certain, even be placed in the absorbate of a part on surface, also can utilize the absorption affinity of regulation to locate and be held on the surface.
Patent documentation 1: the real public clear 43-16175 publication of Japan
Patent documentation 2: Japan Patent No. 2693720 publication.
Summary of the invention
The problem that invention will solve
Above-mentioned existing absorption layer, is only conceived to make many through holes become thin footpath and the conductivity of absorption layer is declined, back pressure being maintained certain, but only making conductivity decline, can not get the absorption affinity of the regulation of adsorbate.Namely, in the vertical of the bottom surface of the opening of covering through hole, (surface to direction, the back side) atmospheric pressure of acting on and upward (back side is to surface direction) differential pressure of back pressure of acting on downwards, make absorbate be adsorbed to the face side of absorption layer, differential pressure be multiplied by the gross area of the opening of the through hole that absorbate covers and obtain this absorption affinity.
So, an open question is left at existing vacuum chuck, this vacuum chuck only makes through hole become path to make the conductivity of absorption layer entirety decline or only makes through hole density decline, thus also reduce the gross area of the opening of the through hole that absorbate covers, thus can not get the absorption affinity of the regulation required by vacuum chuck.
The present invention considers that so existing problem points is made, and its object is to, and provides a kind of vacuum chuck utilizing the absorption affinity required by vacuum chuck reliably to adsorb the absorbate of the part being placed in adsorption plane.
For the technical scheme of dealing with problems
In order to reach above-mentioned object, vacuum chuck described in claim 1, the absorption layer of the porousness substrate that the entirety possessing side is communicated with by the multiple through holes roughly isodensity formed with rear side by airtight and face side, by vacuum pump, airtight rear side is reduced pressure, the multiple through hole covered via the absorbate be placed on surface and adsorbate, wherein, using atmospheric pressure as P1, using the minimum absorption affinity of the per unit area required for the maintenance of absorbate as Fmin, rear side is Pu by limiting pressure, exhaust efficiency is the absorption layer of the vacuum pump attraction of Se, the conductivity C that per surface sum as absorption layer is exposed to the absorption layer entirety that the aperture opening ratio n of the ratio of total aperture area of the through hole in this per surface area and multiple through hole cause meets following formula:
[several 1]
Fmin≤n (P1-Pu) Se/ (Se+C) ... (1) formula.
The absorption affinity of per unit area is the value that aperture opening ratio n is multiplied by the differential pressure of atmospheric pressure P1 and back pressure, and differential pressure is represented by (P1-Pu) Se/ (Se+C).So, absorbate is not placed in satisfied
[several 2]
Fmin ≤ n?(P1-Pu)?Se/(Se+C)
Absorption layer surface on state under, the absorption affinity when vacuum pump being Q by exhaust efficiency attracts becomes minimum more than the absorption affinity Fmin of the per unit area required for maintenance of absorbate.If be placed in by absorbate on the surface, so, regardless of the size of absorbate, the conductivity C of absorption layer all declines, and the absorption affinity thus obtained from n (P1-Pu) Se/ (Se+C) does not become minimum below absorption affinity Fmin.So, even if the part on the surface of absorption layer is not covered by absorbate, also utilize the absorption affinity of minimum more than absorption affinity Fmin to keep absorbate.
In addition, the vacuum chuck described in claim 2, is characterized in that, the internal diameter of the through hole of absorption layer is 1 μm and even 10 μm.
According to (1) formula, aperture opening ratio n is large as much as possible, and the conductivity C of absorption layer becomes value little as far as possible, just obtains larger absorption affinity.In the molecular flow region close to vacuum, 3 powers of cylinder aperture conductivity and radius are proportional, in atmospheric adhesive region, proportional with 4 powers, on the other hand, about total aperture area of the through hole of decision aperture opening ratio n, if each through hole is cylindrical shape, then the quadratic power of aperture area and radius is proportional.So, by the minute diameter making the internal diameter of through hole become 1 μm and even 20 μm, thus more than the aperture opening ratio n of regulation can be become, meanwhile, reduce the conductivity C of absorption layer entirety efficiently.
In addition, the vacuum chuck described in claim 3, is characterized in that, absorption layer to be aperture opening ratio n be more than 20% porous ceramic substrate.
The high density that can become more than 20% by ceramic post sintering with aperture opening ratio n forms fine through hole.At aperture opening ratio n less than in the ceramic substrate of 20%, a part for through hole is inaccessible, produces surface and the disconnected part in the back side.
The effect of invention
According to the invention of claim 1, used the aperture opening ratio n of satisfied (1) formula and the absorption layer of conductivity C by the attraction power according to vacuum pump, thus regardless of the size of absorbate, all reliably can adsorb maintenance.
According to the invention of claim 2, obtain the absorption layer that conductivity C is low, aperture opening ratio n is high.
According to the invention of claim 3, make aperture opening ratio n become more than 20% and form fine through hole to high-density, obtain the absorption layer that conductivity C is low.In addition, owing to being ceramic substrate, even if thus compare thin-walled, also obtain intensity absorbate being placed in the regulation on surface.
Accompanying drawing explanation
Fig. 1 is the key diagram of the vacuum chuck 1 of display an embodiment of the invention.
Fig. 2 is that absorbate W loads and the key diagram of the vacuum chuck 1 of the state attracted to absorption layer 2 by display.
Embodiment
Below, use Fig. 1 and Fig. 2 that the vacuum chuck 1 of an embodiment of the invention is described.As shown in the figure, vacuum chuck 1 possess adsorbate W and absorbate W is held in the absorption layer 2 on surface, sealing absorption layer 2 all sides and be formed with the flowmeter 6 of the air displacement of the detection time per unit of the chuck body 4 in the pressure-reducing chamber 3 completely cut off with extraneous gas, the vacuum pump 5 be vented from the exhaust line be communicated with pressure-reducing chamber 3 and the exhaust efficiency Se that is used for detecting vacuum pump 5 in the rear side of absorption layer 2, flowmeter 6 also can selected meet the absorption layer 2 be applicable to of condition described later after removal.
Absorption layer 2 is by while be that the porous ceramic substrate of the square shape of 60cm is formed, and in the present embodiment, average pore size is that the through hole close contact of 10 μm is formed, and becomes the absorption layer 2 that porosity n is 35%.At this, the through hole be communicated with rear side is formed at the plane of absorption layer 2 with being regarded as isodensity, and porosity n refers to the ratio of total aperture area relative to this unit are of the through hole of the unit are inner opening on absorption layer 2 surface.If use ceramic sintering technology, scope, the porosity n that can be then 1 and even 200 μm with average pore size be 10 so that 60% scope form porous ceramic substrate, but, if porosity n is less than 20%, so, a part for through hole is inaccessible, sometimes can not get the absorption affinity calculated, in addition, if be more than 60%, so, space increases and strength deterioration, likely damaged.
If the atmospheric pressure of the face side of absorption layer 2 is P1, the conductivity of absorption layer 2 entirety is C, the exhaust efficiency of the vacuum pump 5 measured by flowmeter 6 is Se, so, pressure (hereinafter referred to as back pressure) P2 in pressure-reducing chamber 3 when being vented from the pressure-reducing chamber 3 of the vacuum chuck 1 so formed by the vacuum pump 5 of limiting pressure Pu is generally represented by following (2) formula:
P2=(Pu+C/Se P1)/(1+C/Se) ... (2) formula.
(2) formula of use, the differential pressure Δ P of atmospheric pressure P1 and back pressure P2 becomes following (3) formula:
Δ P=P1-P2=(P1-Pu) Se/ (Se+C) ... (3) formula.
On the other hand, the absorption layer 2 of P2 is become in back pressure, as shown in Figure 2, if mounting absorbate W, so, at the opening of the through hole covered by absorbate W, absorbate W is subject to the differential pressure Δ P of atmospheric pressure P1 and back pressure P2 along vertical and is adsorbed, absorbate W be subject to differential pressure Δ P be multiplied by the summation S2 of the aperture area of all through holes covered by absorbate W after absorption affinity F.
If absorbate W is S1 to the projected area on absorption layer 2 surface, so, according to aperture opening ratio n, above-mentioned summation S2 is S1 n, and the absorption affinity F of absorbate W is represented by following (4) formula:
F=nS1 Δ P ... (4) formula,
The absorption affinity F ' of the per unit area of absorbate W becomes following (5) formula:
F '=F/S1=n Δ P ... (5) formula.
And according to (3) formula and (5) formula, the absorption affinity F ' of the per unit area of absorbate W obtains following (6) formula:
F '=n (P1-Pu) Se/ (Se+C) ... (6) formula.
In (6) formula, P1 is as atmospheric pressure and Pu is known to the limiting pressure of vacuum pump 5, about Se, can measure using the flow measured in the unit interval by flowmeter 6 under the state not loading absorbate W shown in Fig. 1 as the exhaust efficiency of vacuum pump 5, thus according to (6) formula, the minimum absorption affinity F ' that the absorption layer 2 obtaining aperture opening ratio n and conductivity C causes.
That is, if from the surface at absorption layer 2 not loading the state of absorbate W, as shown in Figure 2, mounting absorbate W and cover the part of through hole, so, the conductivity C of absorption layer 2 declines, and exhaust efficiency Se drops to the Se obtained by following (7) formula:
Se=(P1-P2)/(P2-Pu) C ... (7) formula.
During to stabilizing to the value of the Se calculated according to (7) formula, conductivity C declines prior to exhaust efficiency Se, thus the Se/ (Se+C) in (6) formula is at least larger than the state of Fig. 1, and the absorption affinity F ' of per unit area rises.
So, no matter with or without absorbate W, the absorption affinity F ' of per unit area is all not less than the absorption affinity F ' calculated according to (6) formula in the condition shown in figure 1, keeping absorbate W and the minimum absorption affinity Fmin that needs using this absorption affinity F ' as vacuum chuck 1 to adsorb, meeting the aperture opening ratio n of following (1) formula and the absorption layer 2 of conductivity C if selected:
[several 3]
Fmin≤n (P1-Pu) Se/ (Se+C) ... (1) formula,
So, can, as the size regardless of absorbate W, the absorption affinity of minimum more than absorption affinity Fmin all can be reliably utilized to carry out the vacuum chuck 1 of adsorbate W.
Embodiment
Can measure and known differential pressure Δ P is applied to the flow Q flowing in the time per unit between surface and the back side under the face side of absorption layer 2 and the state of rear side and calculates the conductivity C of absorption layer 2 from Q/ Δ P.In the present embodiment, cut into the circle of diameter 10mm respectively by the porous ceramics substrate (being called B material) of material identical for the absorption layer 2 of the invention with present embodiment with in order to the existing porousness substrate for vacuum chuck (being called A material) compared and form test film, apply the differential pressure (11kPa) of 1/10 of atmospheric pressure P1 on the surface of this test film and the back side, measure the flow Q of respective time per unit.
As a result, the flow Q (MPa*m of time per unit
3/ s), A material is 0.9133*10
-3, B material is 0.0458*10
-3.The conductivity C of each test film when applying the differential pressure of atmospheric pressure P1, A material is 9.133*10
-3(MPa m
3/ s), B material is 0.458*10
-3(MPa m
3/ s), be converted into each conductivity C (L/min) of the size of the absorption layer 2 of 60cm square thus, A material becomes 197.4, B material and becomes 9.9.
Close to vacuum and the long and molecular flow region of colliding with the inwall of through hole of the mean free path of molecule, using k as Boltzmann constant, using m as molecular mass, using r as the radius of pipe, using L as the length of pipe, using T as temperature, so, each through aperture conductivity c that through hole is assumed to columnar pipe is represented by following (8) formula:
C=4/3 r
3/ L (2 π k T/m)
1/2(8) formula,
Radius r is made to be less value, just can relative to by π r
2represent aperture area and make and r
3proportional conductivity c declines.The absorption layer 2 be made up of B material of present embodiment, by forming through hole by the minute aperture of 10 μm, as long as thus make porosity n drop to 35% a little relative to the A material that porosity n is 45%, just make conductivity C drop to about 1/20 of A material.
In (1) formula, if the minimum absorption affinity Fmin required by vacuum chuck 1 is 33kPa, namely atmospheric pressure P1 3/10, the limiting pressure Pu of vacuum pump 5 is substantial vacuum pressure, and so, (1) formula is replaced into:
[several 4]
C/Se≤10/3 n-1 ... (9) formula.
The conductivity C of A material is 197.4 (L/min), porosity n is 0.45, thus, if substitute into (9) formula respectively, so, becomes:
[several 5]
394.8(L/min) ≤ Se，
Because the exhaust efficiency Se under the state that the absorption layer not loading absorbate W is open is less than 394.8 (L/min), thus can not get the minimum absorption affinity Fmin of 33kPa.
On the other hand, the conductivity C of the B material of present embodiment is 9.9 (L/min), porosity n is 0.35, thus, if substitute into (9) formula respectively, so, becomes:
[several 6]
59.4(L/min) ≤ Se，
Due to do not load Fig. 1 of absorbate W state under exhaust efficiency Se be more than 59.4 (L/min), thus regardless of the size of absorbate W, all can utilize the absorption affinity of minimum more than absorption affinity Fmin to adsorb and keep absorbate W.
In the above-described embodiment, as absorption layer 2, the porous ceramic substrate of 60cm square is utilized to be illustrated, but, as long as meet the aperture opening ratio n of (1) formula and the substrate of conductivity C, then can using the substrate of various material, structure as absorption layer.
In addition, if constructively can form many through holes, then the aperture opening ratio n of absorption layer can be arbitrary value, but, maximum for absorption affinity is the relation of atmospheric pressure P1, can not minimum absorption affinity Fmin required by vacuum chuck 1 relative to the aperture opening ratio n below the ratio of atmospheric pressure P1.
Utilizability in industry
The present invention is suitable for do not keep the workpiece of all size in the manufacturing installation of semiconductor, liquid crystal, printed circuit board etc. or the flow chart of printing machine vacuum chuck with not changing absorption layer.
Symbol description
1 vacuum chuck
2 absorption layers
3 pressure-reducing chambers
5 vacuum pumps
6 flowmeters
Claims (3)
1. a vacuum chuck, the absorption layer of the porousness substrate that the entirety possessing side is communicated with by the multiple through holes roughly isodensity formed with rear side by airtight and face side, by vacuum pump, airtight rear side is reduced pressure, the multiple through hole covered via the absorbate be placed on surface and adsorbate, wherein
Using atmospheric pressure as P1, using the minimum absorption affinity of the per unit area required for the maintenance of absorbate as Fmin,
Rear side by limiting pressure be Pu, exhaust efficiency be the absorption layer that attracts of the vacuum pump of Se, the conductivity C of absorption layer entirety that the aperture opening ratio n that is exposed to the ratio of total aperture area of the through hole in this per surface area as the per surface sum of absorption layer and multiple through hole cause meets following formula:
Fmin ≤ n?(P1-Pu)?Se/(Se+C)。
2. vacuum chuck according to claim 1, is characterized in that, the internal diameter of the through hole of absorption layer is 1 μm and even 20 μm.
3. vacuum chuck according to claim 1 and 2, is characterized in that, absorption layer to be aperture opening ratio n be more than 20% porous ceramic substrate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009271134A JP2011114253A (en) | 2009-11-30 | 2009-11-30 | Vacuum chuck |
| JP2009-271134 | 2009-11-30 | ||
| PCT/JP2010/006942 WO2011065021A1 (en) | 2009-11-30 | 2010-11-29 | Vacuum chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102668059A CN102668059A (en) | 2012-09-12 |
| CN102668059B true CN102668059B (en) | 2015-09-16 |
Family
ID=44066126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080054148.3A Expired - Fee Related CN102668059B (en) | 2009-11-30 | 2010-11-29 | Vacuum chuck |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2011114253A (en) |
| KR (1) | KR20120116909A (en) |
| CN (1) | CN102668059B (en) |
| WO (1) | WO2011065021A1 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016103626A (en) * | 2014-11-13 | 2016-06-02 | 株式会社ナノテム | Pad for transfer, transfer device employing the same, and transfer method |
| EP3427907A1 (en) * | 2016-03-08 | 2019-01-16 | Nano-Tem Co., Ltd. | Conveyance pad, and conveyance device and conveyance method using same |
| JP6815138B2 (en) * | 2016-09-06 | 2021-01-20 | 株式会社ディスコ | Suction retention system |
| CN110098143B (en) * | 2018-01-31 | 2021-06-04 | 上海微电子装备（集团）股份有限公司 | Chip adsorption device and chip bonding system |
| CN109051771B (en) * | 2018-07-05 | 2020-10-02 | 珠海格力电器股份有限公司 | System, method and device for discharging pointer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2892771Y (en) * | 2005-12-29 | 2007-04-25 | 袁建中 | Exhaust suction disc |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4316175Y1 (en) * | 1965-07-21 | 1968-07-05 | ||
| JP2693720B2 (en) * | 1994-05-25 | 1997-12-24 | シーケーディ株式会社 | Method for adsorbing an object to be adsorbed on a vacuum chuck |
| JP5231064B2 (en) * | 2008-03-28 | 2013-07-10 | 太平洋セメント株式会社 | Vacuum adsorption apparatus and method for manufacturing the same |
| JP2009253247A (en) * | 2008-04-11 | 2009-10-29 | Ariake Materials Co Ltd | Suction body for vacuum suction apparatus, and vacuum suction apparatus |
-
2009
- 2009-11-30 JP JP2009271134A patent/JP2011114253A/en active Pending
-
2010
- 2010-11-29 CN CN201080054148.3A patent/CN102668059B/en not_active Expired - Fee Related
- 2010-11-29 KR KR1020127011341A patent/KR20120116909A/en not_active Application Discontinuation
- 2010-11-29 WO PCT/JP2010/006942 patent/WO2011065021A1/en active Application Filing
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2892771Y (en) * | 2005-12-29 | 2007-04-25 | 袁建中 | Exhaust suction disc |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011065021A1 (en) | 2011-06-03 |
| JP2011114253A (en) | 2011-06-09 |
| KR20120116909A (en) | 2012-10-23 |
| CN102668059A (en) | 2012-09-12 |
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