CN102668013A - Scanning electron microscope - Google Patents
Scanning electron microscope Download PDFInfo
- Publication number
- CN102668013A CN102668013A CN2010800529706A CN201080052970A CN102668013A CN 102668013 A CN102668013 A CN 102668013A CN 2010800529706 A CN2010800529706 A CN 2010800529706A CN 201080052970 A CN201080052970 A CN 201080052970A CN 102668013 A CN102668013 A CN 102668013A
- Authority
- CN
- China
- Prior art keywords
- scanning electron
- convergent lens
- electron microscopy
- permanent
- test portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/10—Lenses
- H01J37/14—Lenses magnetic
- H01J37/143—Permanent magnetic lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/10—Lenses
- H01J37/14—Lenses magnetic
- H01J37/141—Electromagnetic lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Electron Sources, Ion Sources (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Disclosed is a scanning electron microscope that can attain device miniaturization while suppressing an increase in column temperature and maintaining performance in areas such as resolving power. The scanning electron microscope, which observes a sample by detecting secondary electrons from the sample when irradiating the sample with an electron beam that is emitted from an electron source and focused by focusing lenses, is characterized by the aforementioned focusing lenses including both an electromagnetic coil and a permanent magnet.
Description
Technical field
The present invention relates to scanning electron microscopy, it will shine from the electronics alignment test portion that electron source is emitted, and to detecting from the secondary electron of test portion etc., thereby observe test portion.
Background technology
In recent years, reached viewpoint, changed into the exploitation of the scanning electron microscopy of miniaturization specially the consideration of environment from paying attention to operability.Therefore, require the miniaturization of the convergent lens that post lens barrel frame possessed.Usually,, need to reduce the number of turn of winding wire, or reduce the diameter of winding wire for the miniaturization of the convergent lens of attempting the solenoid type.
Reduce the number of turn if the diameter of retention wire astragal is constant, then can realize the miniaturization of solenoid certainly, but magnetic field intensity reduces.On the other hand, reduce the diameter of winding wire if the maintenance number of turn is constant, then can keep realization miniaturization under the state of magnetic field intensity, but the rising of the resistance value of winding wire, caloric value increases.If can't keep magnetic field intensity, the point of the electronics line that shines on the test portion is directly diminished, thereby can't keep the resolution of scanning electron microscopy.In addition, if, then can't satisfy all sizes such as IEC, produce the skew or the focus changing of the relative positions of the picture that temperature deviation causes at aspect of performance because of the increase post lens barrel frame surface temperature of caloric value rises.Therefore, in order to make the convergent lens miniaturization of solenoid type, need to solve the minimizing of magnetic field intensity, the such problem of increase of caloric value.
In order to solve such problem, for example in patent documentation 1, disclose the convergent lens that replaces the solenoid type, and adopted the structure of the convergent lens of the permanent magnet coil form more small-sized than solenoid type.
Technical literature formerly
Patent documentation
Patent documentation 1: TOHKEMY 2008-204749 communique
Yet above-mentioned patent documentation 1 is not owing to use the convergent lens of solenoid type, and all uses the convergent lens of permanent magnet coil form, therefore attempts appending convergent lens, and change excitation condition.That is, patent documentation 1 need carry out the dismounting of convergent lens, thereby operability is poor, and is produced the changing of the relative positions of optical axis when change probe current or some footpath.
Summary of the invention
The present invention is in view of such situation and proposing, and its purpose is to provide a kind of temperature that can suppressed column lens barrel frame to rise, and keeps performance such as resolution, and the scanning electron microscopy of the miniaturization of implement device simultaneously.
In order to solve above-mentioned problem, the present invention is with the convergent lens change of the part in the convergent lens of a plurality of solenoid types to permanent-magnet type.
Promptly; The electronics line that scanning electron microscopy of the present invention is utilized convergent lens to make to emit from electron source is assembled and is shone to test portion; And to detecting from the secondary electron of test portion, reflection electronic, other signal; Thereby the observation test portion, wherein, said convergent lens has these two kinds of solenoid type and permanent-magnet types.
In this case, the convergent lens of epimere can be permanent-magnet type.In addition, can have the deflector that the optical axis of electronics line is revised at least a portion place in the bottom of the convergent lens of permanent-magnet type, the coaxial and top.
The invention effect
According to scanning electron microscopy of the present invention, temperature that can suppressed column lens barrel frame rises, and keeps performance such as resolution, and the miniaturization of implement device simultaneously.Thus, the operability of device can be improved, and simple to operateization can be made.And, because consumes electric power that can restraining device, therefore can realize considering the scanning electron microscopy of environment.
Description of drawings
Fig. 1 is the brief configuration figure of common scanning electron microscopy.
Fig. 2 is the brief configuration figure of scanning electron microscopy of the present invention.
Fig. 3 is the brief configuration figure of scanning electron microscopy of the present invention.
Fig. 4 is the key diagram of the calibration carried out of deflector (hypomere) of expression scanning electron microscopy of the present invention.
Fig. 5 is the key diagram of the calibration carried out of deflector (stage casing) of expression scanning electron microscopy of the present invention.
Fig. 6 is the key diagram of the calibration carried out of deflector (epimere) of expression scanning electron microscopy of the present invention.
Embodiment
The present invention relates to test portion irradiation electronics line and to detecting, thereby obtain the scanning electron microscopy of the image on test portion surface from the secondary electron on test portion surface etc.Below, with reference to accompanying drawing execution mode of the present invention is described.But, should notice that this execution mode only realizes an example of the present invention for being used to, technical scope of the present invention is not limited.In addition, in each figure, general structure is marked same reference marks.
< common scanning electron microscopy >
Fig. 1 is the brief configuration figure of common scanning electron microscopy.Common scanning electron microscopy possesses: the electron source 1 of ejected electron line 2; Produce the Wehnelt cylinder 3 of negative voltage; Produce the anode electrode 4 of positive voltage; First convergent lens 6 and second convergent lens 7 that electronics line 2 after being accelerated is assembled; The object lens 12 that the point of subtend test portion irradiation is directly adjusted; The object lens aperture 11 that electronics line 2 through object lens 12 is limited; Carry the test portion platform 10 of putting test portion.
Then, with reference to Fig. 1, the principle of common scanning electron microscopy is described.Device is inner to be carried out vacuum exhaust, behind the vacuum pressure that reaches target, electron source 1 is applied high pressure.From the electron source 1 ejected electron line 2 that is applied as high pressure.The electronics line 2 of emitting receives converging action under the effect of the current potential of Wehnelt cylinder 3, thus curved in tracks and between Wehnelt cylinder 3 and anode electrode 4, produce first and intersect (crossover) 5.Afterwards; Electronics line 2 by after Wehnelt cylinder 3 acceleration passes through anode electrode 4; Under the effect of first convergent lens (solenoid type) 6, receive converging action, intersect 8 thereby produce second between 7 at first convergent lens 6 and second convergent lens (solenoid type).And then, between second convergent lens (solenoid type) 7 and object lens 12, produce the 3rd and intersect 9.Electronics line 2 is assembled under the effect of object lens 12, and by 11 restrictions of object lens aperture, and put the test portion surface irradiation on test portion platform 10 to carrying.Shine the lip-deep electronics line 2 of test portion and be created in reflection electronic that rebounds on the test portion surface and the secondary electron that flies out from the test portion surface etc.Above-mentioned reflection electronic and secondary electron be taken into be arranged on the indoor detector of test portion, through amplifying circuit, send into display after the line data of the going forward side by side conversion, thereby can on operation screen, confirm as the image on test portion surface.Need to prove the position beyond object lens aperture 11 also can be provided with in the position shown in the figure 1.
< scanning electron microscopy of this execution mode >
Fig. 2 and Fig. 3 are the brief configuration figure of the scanning electron microscopy of this execution mode.The scanning electron microscopy of this execution mode is compared with the common scanning electron microscopy of previous narration, and difference is first convergent lens 6 or second convergent lens 7 are replaced with the convergent lens 13,14 of permanent-magnet type.Because therefore small-sized the and light weight of convergent lens of permanent-magnet type disposes permanent-magnet type with Fig. 3 that kind and compare on second convergent lens, the lens of configuration permanent-magnet type more reduce center of gravity at the first convergent lens place as Fig. 2, and are therefore preferred.This is because if center of gravity reduces, then the stability of device increases, thereby is not vulnerable to the influence of external interference (vibration).
At first, adopt the situation (Fig. 2) of permanent-magnet type to describe to first convergent lens 13.In this case; Same with above-mentioned common scanning electron microscopy; Electronics line 2 by after Wehnelt cylinder 3 acceleration passes through anode electrode 4; And under the effect of first convergent lens (permanent-magnet type) 13, receive converging action, intersect 8 thereby produce second between 7 at first convergent lens (permanent-magnet type) 13 and second convergent lens (solenoid type).
But first convergent lens 13 of permanent-magnet type can not carry out Current Control as the solenoid type, thereby can't change the upper-lower position of second intersection 8 arbitrarily.Yet,, can change through second convergent lens (solenoid type) 7 is carried out Current Control for the 3rd intersecting for 9 the upper-lower position what produce between second convergent lens (solenoid type) 7 and the object lens 12.
Then, adopt the situation (Fig. 3) of permanent-magnet type to describe to second convergent lens 14.In this case; Electronics line 2 by after Wehnelt cylinder 3 acceleration also passes through anode electrode 4; And under the effect of first convergent lens (solenoid type) 6, receive converging action, intersect 8 thereby produce second between 14 at first convergent lens 6 and second convergent lens (permanent-magnet type).The upper-lower position of this second intersection 8 can change through the Current Control of first convergent lens (solenoid type) 6; Yet; For the 3rd intersecting for 9 the upper-lower position what obtain between second convergent lens 14 and the object lens 12; Owing to can't carry out Current Control to second convergent lens 14 of permanent-magnet type, therefore can't change arbitrarily.Thereby, for the point to the probe current on the test portion is directly adjusted, need to carry out through the Current Control of first convergent lens (solenoid type) 6.
That kind as described above, in this execution mode, the part in the convergent lens of a plurality of solenoid types that will dispose along the starting of electronics line 2 is to the convergent lens change of permanent-magnet type.
Through such structure, can keep the function that the point on test portion footpath and probe current are adjusted, and realize the miniaturization of scanning electron microscopy, the simplification of operation.Simultaneously, the caloric value of convergent lens of the solenoid type of at least one can be cut down, thereby the scanning electron microscopy of environment can be realized helping.
< calibration of the scanning electron microscopy of this execution mode >
Fig. 4~6th, the key diagram of the calibration that the deflector of the scanning electron microscopy of this execution mode of expression carries out.When the accelerating voltage of Wehnelt cylinder 3 or anode electrode 4 changed, the upper-lower position of the intersection through the electronics line 2 behind the convergent lens 13 or 14 of permanent-magnet type changed.
Under the situation of high accelerating voltage, electronics line 2 receives strong acceleration and easy straight ahead, therefore becomes long focus and is difficult for causing the optical axis changing of the relative positions.Yet under the situation of low accelerating voltage, electronics line 2 becomes short focus and causes the optical axis changing of the relative positions easily.For this optical axis changing of the relative positions is revised, in this execution mode, in the bottom (downside) of the convergent lens of permanent-magnet type (Fig. 4), coaxial (central shaft identical) with convergent lens (Fig. 5) or top (upside) (Fig. 6) dispose deflector 15.
In Fig. 4,5, revise magnetic fields and come optical axis the changing of the relative positions to revise to 2 effects of the later electronics line of the optical axis changing of the relative positions take place, relative therewith, in Fig. 6, come optical axis the changing of the relative positions to revise to the effect of electronics line and the reciprocal correction of optical axis offset direction magnetic field in advance.In addition, in Fig. 5, on convergent lens 13, the 14 coaxial structures that deflector 15 are configured in permanent-magnet type, must make the aperture of the convergent lens of permanent-magnet type become big, thereby magnetic field intensity is reduced.Therefore, in the control of deflector and on the structure, Fig. 4 is most preferred execution mode.Need to prove that the deflector of Fig. 4~6 is the magnetic field formula, but also can be Electric field.In addition, also can make up the deflector of a plurality of Fig. 4~6.
Usually, the convergent lens of permanent-magnet type parts number of packages in manufacture process is many, is difficult to suppress each inequality.Therefore, used the scanning electron microscopy of the convergent lens of permanent-magnet type to cause the optical axis changing of the relative positions easily, on the performance of device, had problems.Therefore, in this execution mode, in order to address this problem, and the deflector 15 that the changing of the relative positions is revised to optical axis is set.
Like this,, come electronics line 2 is revised, become the electronics of normal orbit line 16 thereby can access through deflector 15 being applied the electric field or the magnetic field of eliminating the optical axis changing of the relative positions.Thus, do not utilize accelerating voltage just can obtain preferable image.
< summary >
According to the scanning electron microscopy of this execution mode, with the convergent lens change of the part in the convergent lens of solenoid type to permanent-magnet type.
Like this, through the convergent lens of solenoid type, can keep the function that the point on test portion footpath and probe current are adjusted, and realize the miniaturization of scanning electron microscopy, the simplification of operation.Simultaneously, the caloric value of convergent lens of the solenoid type of at least one can be cut down, thereby the scanning electron microscopy of environment can be realized helping.
In addition, according to the scanning electron microscopy of this execution mode, at the bottom of the convergent lens of permanent-magnet type, coaxial or top configuration deflector.
Like this, can revise, not utilize accelerating voltage just can obtain preferable image the optical axis changing of the relative positions of electronics line.
That kind as described above; The scanning electron microscopy of this execution mode is compared with the scanning electron microscopy of existing type; Change into miniaturization specially; Therefore its use is likewise checked usefulness as particular study with existing type certainly, can also spread all over many aspects, even also uses as a scholastic ring, individual's interest.
Need to prove; In this execution mode; The method of under the state of the performance of keeping scanning electron microscopy, carrying out miniaturization has been described; But if the size of holding device self, the then self-evident performance that can improve scanning electron microscopy is like the raising that realizes magnetic field intensity, the raising of resolution, the minimizing of caloric value etc.
Symbol description:
1 electron source
2 electronics lines
3 Wehnelt cylinders
4 anode electrodes
5 first intersect
6 first convergent lenses (solenoid type)
7 second convergent lenses (solenoid type)
8 second intersect
9 the 3rd intersect
10 test portion platforms
11 object lens apertures
12 object lens
13 first convergent lenses (permanent-magnet type)
14 second convergent lenses (permanent-magnet type)
15 deflectors
Claims (3)
1. scanning electron microscopy; Its electronics line that utilizes convergent lens to make to emit from electron source is assembled and is shone to test portion, and to detecting from the secondary electron of test portion, reflection electronic, other signal, thereby observe test portion; Said scanning electron microscopy is characterised in that
Said convergent lens has these two kinds of solenoid type and permanent-magnet types.
2. scanning electron microscopy according to claim 1 is characterized in that,
The said convergent lens of epimere is a permanent-magnet type.
3. scanning electron microscopy according to claim 1 and 2 is characterized in that,
At least a portion place in the bottom of the convergent lens of said permanent-magnet type, coaxial and top has the deflector that the optical axis of said electronics line is revised.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009268670 | 2009-11-26 | ||
JP2009-268670 | 2009-11-26 | ||
PCT/JP2010/070188 WO2011065240A1 (en) | 2009-11-26 | 2010-11-12 | Scanning electron microscope |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102668013A true CN102668013A (en) | 2012-09-12 |
CN102668013B CN102668013B (en) | 2015-05-27 |
Family
ID=44066345
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080052970.6A Active CN102668013B (en) | 2009-11-26 | 2010-11-12 | Scanning electron microscope |
Country Status (5)
Country | Link |
---|---|
US (1) | US8921784B2 (en) |
JP (1) | JP5504277B2 (en) |
KR (1) | KR101318592B1 (en) |
CN (1) | CN102668013B (en) |
WO (1) | WO2011065240A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105144336A (en) * | 2013-04-25 | 2015-12-09 | 株式会社日立高新技术 | Electron gun, charged particle gun, and charged particle beam apparatus using electron gun and charged particle gun |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2672502B1 (en) * | 2012-06-06 | 2017-08-09 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | electron beam optical system comprising high brightness electron gun with moving axis condenser lens |
JP6114981B2 (en) * | 2012-10-17 | 2017-04-19 | 株式会社リガク | X-ray generator |
KR101456794B1 (en) * | 2013-08-08 | 2014-11-03 | (주)오로스 테크놀로지 | Adjustable beam spot scanning electron microscope and measured using the same method |
KR102234659B1 (en) | 2013-10-29 | 2021-04-05 | 삼성전자주식회사 | Scanning electron microscope device capable of measuring in-cell overlay offset using high energy electron beam and methods thereof |
WO2018198222A1 (en) * | 2017-04-26 | 2018-11-01 | 株式会社ニコン | Exposure apparatus, exposure method, and method for manufacturing device |
US11094499B1 (en) * | 2020-10-04 | 2021-08-17 | Borries Pte. Ltd. | Apparatus of charged-particle beam such as electron microscope comprising sliding specimen table within objective lens |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03138841A (en) * | 1989-10-23 | 1991-06-13 | Hitachi Ltd | Scanning type electron microscope |
US20080067396A1 (en) * | 2006-05-17 | 2008-03-20 | Takashi Ohshima | Electron Lens and Charged Particle Beam Apparatus |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2718606A (en) * | 1952-08-02 | 1955-09-20 | Gen Electric | Combination electromagnet-permanent magnet focusing devices |
US2901627A (en) * | 1953-02-19 | 1959-08-25 | Leitz Ernst Gmbh | Method of and apparatus for the electronic magnification of objects |
JPS5225290B2 (en) * | 1973-06-04 | 1977-07-06 | ||
JPS51105764A (en) * | 1975-03-14 | 1976-09-18 | Hitachi Ltd | DENKAIHOSHUTSUSOSAGATADENSHIKENBIKYO |
JPS5299765A (en) * | 1976-02-18 | 1977-08-22 | Hitachi Ltd | Transmission type electron lens |
FR2520553A1 (en) * | 1982-01-22 | 1983-07-29 | Cameca | ELECTRONIC OPTICAL APPARATUS COMPRISING PYROLYTIC GRAPHITE ELEMENTS |
JPH06101318B2 (en) * | 1985-10-16 | 1994-12-12 | 株式会社日立製作所 | Ion microbeam device |
GB2192092A (en) * | 1986-06-25 | 1987-12-31 | Philips Electronic Associated | Magnetic lens system |
JPH073772B2 (en) * | 1987-02-13 | 1995-01-18 | 日電アネルバ株式会社 | Electronic beam focusing device |
JPH04112440A (en) * | 1990-08-31 | 1992-04-14 | Nippon Seiki Co Ltd | Observation device |
JPH05128986A (en) * | 1991-11-06 | 1993-05-25 | Jeol Ltd | Magnetic field type lens |
KR970005769B1 (en) * | 1992-08-27 | 1997-04-19 | 가부시끼가이샤 도시바 | Magnetic immersion field emission electron gun |
WO2000041206A1 (en) * | 1999-01-04 | 2000-07-13 | Hitachi, Ltd. | Element mapping device, scanning transmission electron microscope, and element mapping method |
JP2003346697A (en) * | 2002-05-24 | 2003-12-05 | Technex Lab Co Ltd | Scanning electron microscope using permanent magnetic lens |
NL1023260C1 (en) * | 2003-04-24 | 2004-10-27 | Fei Co | Particle-optical device with a permanent magnetic lens and an electrostatic lens. |
JP4928987B2 (en) * | 2006-03-08 | 2012-05-09 | 株式会社日立ハイテクノロジーズ | Charged particle beam adjustment method and charged particle beam apparatus |
US8026491B2 (en) | 2006-03-08 | 2011-09-27 | Hitachi High-Technologies Corporation | Charged particle beam apparatus and method for charged particle beam adjustment |
JP5075375B2 (en) * | 2006-08-11 | 2012-11-21 | 株式会社日立ハイテクノロジーズ | Scanning electron microscope |
JP2008204749A (en) * | 2007-02-20 | 2008-09-04 | Technex Lab Co Ltd | Scanning electron microscope using permanent magnetic lens |
JP5690086B2 (en) * | 2010-07-02 | 2015-03-25 | 株式会社キーエンス | Magnifying observation device |
US20130134322A1 (en) * | 2010-10-27 | 2013-05-30 | Param Corporation | Electron lens and the electron beam device |
-
2010
- 2010-11-12 WO PCT/JP2010/070188 patent/WO2011065240A1/en active Application Filing
- 2010-11-12 JP JP2011543209A patent/JP5504277B2/en active Active
- 2010-11-12 US US13/505,517 patent/US8921784B2/en active Active
- 2010-11-12 CN CN201080052970.6A patent/CN102668013B/en active Active
- 2010-11-12 KR KR1020127013397A patent/KR101318592B1/en active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03138841A (en) * | 1989-10-23 | 1991-06-13 | Hitachi Ltd | Scanning type electron microscope |
US20080067396A1 (en) * | 2006-05-17 | 2008-03-20 | Takashi Ohshima | Electron Lens and Charged Particle Beam Apparatus |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105144336A (en) * | 2013-04-25 | 2015-12-09 | 株式会社日立高新技术 | Electron gun, charged particle gun, and charged particle beam apparatus using electron gun and charged particle gun |
CN105144336B (en) * | 2013-04-25 | 2017-05-03 | 株式会社日立高新技术 | Electron gun, charged particle gun, and charged particle beam apparatus using electron gun and charged particle gun |
Also Published As
Publication number | Publication date |
---|---|
US8921784B2 (en) | 2014-12-30 |
JP5504277B2 (en) | 2014-05-28 |
KR101318592B1 (en) | 2013-10-15 |
JPWO2011065240A1 (en) | 2013-04-11 |
US20120211654A1 (en) | 2012-08-23 |
KR20120085303A (en) | 2012-07-31 |
WO2011065240A1 (en) | 2011-06-03 |
CN102668013B (en) | 2015-05-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102668013A (en) | Scanning electron microscope | |
KR102139654B1 (en) | Dual-lens-gun electron beam apparatus and methods for high-resolution imaging with both high and low beam currents | |
JPH09171791A (en) | Scanning type electron microscope | |
US20040183016A1 (en) | Scanning electron microscope and sample observation method using the same | |
JP2007335125A (en) | Electron beam device | |
KR20080048528A (en) | Electron beam source for use in electron gun | |
JPWO2012050018A1 (en) | Electron beam equipment | |
US20080277584A1 (en) | Method for Changing Energy of Electron Beam in Electron Column | |
CN109411320A (en) | Transmit the diffraction pattern detection in charged particle microscope | |
US20050263701A1 (en) | Substrate inspection method, method of manufacturing semiconductor device, and substrate inspection apparatus | |
CN113471042A (en) | Scanning electron microscope device and electron beam inspection apparatus | |
JP2011023126A (en) | Charged particle beam irradiating device, lithography apparatus, analyzer microscope, charged particle beam emitter, and lens unit for charged particle beam | |
US11251018B2 (en) | Scanning electron microscope | |
US8076642B2 (en) | Electron beam apparatus and method of operating the same | |
JP2005032588A (en) | Magnetic field objective lens for electron microscope | |
JP4675578B2 (en) | Image pickup device and image pickup apparatus using the same | |
US7161149B2 (en) | Scanning electron microscope and method of controlling same | |
JP2009076447A (en) | Scanning electron microscope | |
JP4382424B2 (en) | Multi-emitter evaluation method and multi-emitter evaluation apparatus | |
JP4792074B2 (en) | Substrate inspection method and substrate inspection apparatus | |
JP2004247321A (en) | Scanning electron microscope | |
JP2001243904A (en) | Scanning electron microscope | |
JPH07240168A (en) | Scanning electron microscope | |
JP2008204749A (en) | Scanning electron microscope using permanent magnetic lens | |
JP2014063640A (en) | Scanning electron microscope |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |