CN102664217A - Production process of crystalline silicon double-sided solar battery - Google Patents
Production process of crystalline silicon double-sided solar battery Download PDFInfo
- Publication number
- CN102664217A CN102664217A CN201210149129XA CN201210149129A CN102664217A CN 102664217 A CN102664217 A CN 102664217A CN 201210149129X A CN201210149129X A CN 201210149129XA CN 201210149129 A CN201210149129 A CN 201210149129A CN 102664217 A CN102664217 A CN 102664217A
- Authority
- CN
- China
- Prior art keywords
- silicon substrate
- silicon
- face
- slurry
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a production process of a crystalline silicon double-sided solar battery, comprising the following steps of: etching to enable a silicon substrate to have an etched face; manufacturing a window which accords with an electrode pattern on a backlight face of the silicon substrate; carrying out heat treatment on the silicon substrate to form a PN junction in the window; washing the silicon substrate; plating at least two layers of antireflection films on a light reflective face of the silicon substrate; plating the antireflection film on a backlight face of the silicon substrate; printing electrode slurry on a silk screen; and sintering to obtain a metal electrode so as to finish the manufacturing of a battery cell. The production process disclosed by the invention is ingenious in concept, is compatible with a conventional industrial battery production line and is easy for industrial manufacture; compared with the conventional solar battery, an electrode grid line is not arranged on the light reflective face of the double-sided solar battery so as to prevent the electrode grid line of the light reflective face from shielding sunlight; the backlight face is provided with a light trapping structure and an antireflection film layer so that the backlight face of the battery also can absorb and utilize the sunlight; and the antireflection films of the light reflective face and the backlight face can passivate the solar battery, so as to be good for improving the efficiency of the battery.
Description
Technical field
The present invention relates to a kind of crystalline silicon double-side solar cell production technology, belong to the photovoltaic field.
Background technology
Solar cell is the core parts of opto-electronic conversion.Understand according to the applicant; No matter the solar cell of domestic industry production at present is conventional P type solar cell (the matrix silicon chip is the III major element that mixes) or N type solar cell (the matrix silicon chip is the V major element that mixes); Be the solar cell of double-face electrode, promptly the front of solar cell (phototropic face) has the back side (shady face) of gate line electrode and solar cell that aluminium back of the body field is arranged.There is gate line electrode in the front of conventional batteries, can block a part of incident light like this, and the front of solar cell (phototropic face) diffusion have dead layer, be unfavorable for the short wave response of sunlight.Simultaneously, the back side of conventional batteries has aluminium back of the body field to cover, and can't absorb the incident light at the back side.And the complex manufacturing technology of domestic and international crystalline silicon double-side solar cell, equipment investment is bigger.
The main dopant that existing crystal-silicon solar cell carries out the tubular type thermal diffusion is POCl3 and Boron tribromide, however POCl3 volatilize easily and severe toxicity arranged, Boron tribromide is poisonous and have corrosivity, therefore the service condition to them requires very high.And; The existing solar cell edge and the back side need etching, and etching is reacted through wet chemistry and accomplished, and need use a large amount of hydrofluoric acid, nitric acid, sulfuric acid, alkali lye, deionized water; Reaction residue causes serious destruction to environment, to the big difficulty of recovery existence of waste liquid; The waste gas that etching produced, very big like nitric oxide, nitrogen dioxide toxicity, therefore require very highly with air draft to technology is airtight, gas is also comparatively serious to environment damage.Equipment aspect investment is also very big, and mostly the used equipment of conventional production line etching is import equipment, for example RENA etc.
Summary of the invention
Technical problem to be solved by this invention is, overcomes shortcomings such as complex manufacturing technology, the equipment investment of existing crystalline silicon double-side solar cell is big, and a kind of crystalline silicon double-side solar cell production technology is provided; Be easy to industrial realization; Remove existing conventional liquid phosphorus source, boron source thermal diffusion step and etch step from, enhance productivity, reduce cost; Reduction is to the pollution of environment, and the realization of this technology and industrialization conventional solar cell production line compatibility.
In order to solve above technical problem, crystalline silicon double-side solar cell production technology provided by the invention is characterized in that comprising the steps:
The first step, to N type or the making herbs into wool of P type silicon substrate, make the phototropic face of silicon substrate and the matte light trapping structure that shady face obtains having sunken light action;
Second goes on foot, the silicon substrate after the making herbs into wool is cleaned, and removes metal ion and impurity;
The 3rd goes on foot, the silicon substrate shady face is carried out boron source, the injection of phosphorus source ion or spraying respectively or carries out boron source slurry, the slurry silk screen printing of phosphorus source respectively, and obtains the P type window that conforms to the positive electrode pattern, the N type window that conforms to the negative electrode pattern respectively; Perhaps, N type silicon substrate shady face is carried out that the boron source ion injects or spraying or carry out the slurry silk screen printing of boron source, and obtain the P type window that conforms to the positive electrode pattern; Perhaps, P type silicon substrate shady face is carried out that the phosphorus source ion injects or spraying or carry out the slurry silk screen printing of phosphorus source, and obtain the N type window that conforms to the negative electrode pattern; Wherein, after silk screen printing, dry silicon substrate;
The 4th goes on foot, silicon substrate is heat-treated, and makes the silicon in silicon substrate shady face P type or the N type window diffuseed to form the P-N knot by boron source or phosphorus source;
The 5th goes on foot, the silicon substrate after the heat treatment is cleaned, and removes impurity;
The 6th step, plate two-layer at least antireflective coating at the phototropic face of silicon substrate;
The 7th step, plate antireflective coating at the shady face of silicon substrate;
The 8th step, carry out the slurry silk screen printing of metal positive and negative electrode, make that positive electrode pattern and P type window are superimposed, negative electrode pattern and N type window be superimposed at the shady face of silicon substrate;
The 9th step, sintering slurry obtain metal electrode at the shady face of silicon substrate, accomplish the making of battery sheet.
The present invention has carried out injection of dopant (being boron source, phosphorus source) ion or spraying or has carried out dopant slurry (being boron source slurry, phosphorus source slurry) silk screen printing forming P type and/or N type window to silicon substrate, after Overheating Treatment, has realized window optionally boron source and/or the thermal diffusion of phosphorus source; Remove residual dopant slurry and other impurity through cleaning and removing again, thereby save the thermal diffusion step of conventional liquid or gas dopant and the etch step at edge and back, simplified production technology, reduced production cost, reduced pollution simultaneously environment; And the antireflection film layer that covers (phototropic face and shady face) plays good passivation to the battery sheet, helps improving the quantum efficiency of solar cell.
Conventional solar cell (all there is gate electrode line at the phototropic face and the back side); Can make the surface of silicon chip generate PN junction after exposed silicon chip spread; Follow-uply need the PN junction of the back side and side be fallen with wet method or dry etching, thereby avoid the short circuit and the electric leakage of battery itself.Because the present invention adopts injection of dopant selectivity ion or spraying or the silk screen printing of dopant slurry selectivity to obtain the window that conforms to the positive and negative electrode pattern; Heat treatment then; Prevented window with exterior domain by boron or phosphorus doping, promptly realized the selectivity diffusion, therefore just avoided the side that PN junction is arranged; So do not needed etch step, more do not needed conventional liquid state or gaseous state doping thermal diffusion.Simultaneously; Because the front of double-side solar cell does not have gate line electrode to block, the back side has light trapping structure and has covered antireflection film layer, can the sunlight at the back side be absorbed like this; Therefore can at utmost increase the light-receiving area of two-sided battery, improve battery efficiency.
In the process of the present invention's the 9th step sintering slurry, metal electrode can permeate back side antireflection film layer, and metal electrode is contacted with the PN junction of silicon substrate.
In order to solve above technical problem, the present invention adopts further technical scheme following:
1, in second step, adopt hydrochloric acid solution, washed with de-ionized water to remove the metal ion and the impurity on silicon substrate surface, dring silicon matrix then.
2, in the 3rd step, boron source slurry is the silicon China ink slurry that is doped with the III major element, and phosphorus source slurry is the silicon China ink slurry that is doped with the V major element.
3, in the 4th step, adopt the silicon substrate after Equipment for Heating Processing is dried the dopant printing to heat-treat; Equipment for Heating Processing is a thermal diffusion furnace.
4, in the 5th step, adopt hydrochloric acid solution, hydrofluoric acid solution, washed with de-ionized water to remove the slurry and the impurity of silicon substrate remained on surface, dring silicon matrix then.
5, in the 6th step and the 7th step, adopt PECVD or PVD method to silicon substrate phototropic face, shady face difference coated with antireflection rete.
6, in the 6th step, the refractive index of each layer antireflective coating is different.
7, in the 8th step, the silk screen printing of positive and negative electrode is that one-step print is accomplished.The positive and negative electrode silk screen printing is reduced to one-step print by the three steps printing of routine, simplifies production technology, enhances productivity.
8, in the first step, during making herbs into wool, make the side of silicon substrate also obtain having the matte light trapping structure of sunken light action.
The present invention can directly utilize existing conventional equipment with general industrialized conventional batteries production line can be well compatible at present, has avoided the with high investment of equipment aspect, helps the industrialization popularization and application of double-side solar cell, accelerates the process of photovoltaic industry.Inject or spraying or the silk screen printing of dopant slurry through the doped source ion, obtain the required pattern of subsequent electrode; To the silicon chip behind the printed dopant slurry, heat-treat and make diffuse dopants; Conventional batteries technology has been saved the complex steps of the thermal diffusion of liquid state or gaseous state doped source relatively, and the investment of also having saved etching apparatus has simultaneously reduced manufacturing cost, environmental problem and the personnel operation risk of having avoided etching apparatus to bring; The antireflective coating that the silicon chip phototropic face is plating to less two-layer different refractivity helps reducing the reflection loss of light, and passivation silicon chip phototropic face, eliminates silicon chip phototropic face defective; The silicon chip shady face is carried out plated film,, increase of the utilization of solar cell shady face sunlight to reduce the reflection loss of back of solar cell incident ray, and defectives such as passivation silicon chip shady face and elimination silicon chip lattice damage; The metal positive and negative electrode only needs a silk screen printing.
It is thus clear that, ingenious conception of the present invention, compatible with conventional industrialization production line for manufacturing battery, be easy to industrialization and make; Simultaneously relative conventional solar cell; The present invention has saved the higher etch step of expense and the complicated liquid state or the thermal diffusion step of gaseous state doped source, and the metal electrode silk screen printing becomes a step silk screen printing by three single metal wire electrode reticulated printings of conventional solar cell.The present invention will be widely used in the photovoltaic field, have good market prospects.
Description of drawings
Below in conjunction with accompanying drawing the present invention is further described.
Fig. 1 is a crystalline silicon double-side solar cell sectional structure sketch map.
Fig. 2 is a crystalline silicon double-side solar cell shady face structural representation.
Embodiment
The production technology of the crystalline silicon double-side solar cell of present embodiment (like Fig. 1, shown in Figure 2) comprises the steps:
The first step, to silicon substrate 4 making herbs into wool, make phototropic face, side, the shady face of silicon substrate 4 obtain having the matte light trapping structure 3 of sunken light action; If silicon substrate is a monocrystalline silicon piece and a type monocrystalline silicon piece, then carry out alkali making herbs into wool; If silicon substrate is a polysilicon chip, then carry out sour making herbs into wool;
Second step, employing hydrochloric acid solution, washed with de-ionized water are removed metal ion and other impurity on silicon substrate 4 surfaces, dring silicon matrix then.
The window that the 3rd step, making conform to electrode pattern has following three kinds of methods:
1, the shady face to silicon substrate 4 carries out boron source slurry (preferably being doped with the silicon China ink slurry of III major element), phosphorus source slurry (preferably being doped with the silicon China ink slurry of V major element) silk screen printing; And the oven dry silicon substrate, obtain the P type and the N type window that conform to positive and negative electrode 6,7 patterns;
2, silicon substrate 4 shady faces are carried out boron source (the liquid doped source of preferred III major element), phosphorus source (liquid state of preferred V major element) spraying, obtain the P type and the N type window that conform to positive and negative electrode 6,7 patterns;
3, silicon substrate 4 shady faces are carried out boron source (the gaseous state doped source of preferred III major element), the injection of phosphorus source (the gaseous state doped source of preferred V major element) ion, obtain the P type and the N type window that conform to positive and negative electrode 6,7 patterns;
In addition, to N type silicon substrate, can only make P type window; To P type silicon substrate, can only make N type window.
The 4th step, employing Equipment for Heating Processing (preferred diffusion stove) are heat-treated silicon substrate 4, make the silicon at window place form PN junction.
The 5th step, employing hydrofluoric acid solution, hydrochloric acid solution, deionized water clean silicon substrate 4, remove residual slurry and impurity, and dring silicon matrix 4;
The 6th step, employing PECVD or PVD method plate the silicon nitride antireflective coating 1 and 2 of two-layer different refractivity at the phototropic face of silicon substrate 4;
The 7th step, employing PECVD or PVD method plate silicon nitride antireflective coating 5 at the shady face of silicon substrate 4;
The 8th step, the slurry silk screen printing of carrying out the metal positive and negative electrode at the shady face of silicon substrate 4 makes the positive electrode pattern and P type window is superimposed, negative electrode pattern and N type window are superimposed; The silk screen printing of positive and negative electrode is an one-step print;
The 9th step, sintering slurry obtain metal electrode at the shady face of silicon substrate, accomplish the making of battery sheet.
Among Fig. 2,6 is metal positive-pole, and 7 is the metal negative pole.
Basic step method among the present invention; Make phototropic face, side and shady face have matte, the injection of doped source ion or perhaps dopant slurry silk screen printing of spraying, dopant heat treatment making PN junction, silicon body phototropic face and shady face coated with antireflection film, electrode slurry silk screen printing, sintering slurry such as silicon substrate making herbs into wool; Belong to existing mature technique means; Therefore in the present embodiment, the method for these steps is not set forth in detail.Innovative point of the present invention is the combination between the step, has simplified production technology, and reduces the pollution to environment, and the solar cell that makes can at utmost increase light-receiving area, improves battery efficiency, has outstanding characteristics and obvious improvement.
Except that the foregoing description, the present invention can also have other execution modes.All employings are equal to the technical scheme of replacement or equivalent transformation formation, all drop on the protection range of requirement of the present invention.
Claims (10)
1. crystalline silicon double-side solar cell production technology is characterized in that comprising the steps:
The first step, to N type or the making herbs into wool of P type silicon substrate, make the phototropic face of silicon substrate and the matte light trapping structure that shady face obtains having sunken light action;
Second goes on foot, the silicon substrate after the making herbs into wool is cleaned, and removes metal ion and impurity;
The 3rd goes on foot, the silicon substrate shady face is carried out boron source, the injection of phosphorus source ion or spraying respectively or carries out boron source slurry, the slurry silk screen printing of phosphorus source respectively, and obtains the P type window that conforms to the positive electrode pattern, the N type window that conforms to the negative electrode pattern respectively; Perhaps, N type silicon substrate shady face is carried out that the boron source ion injects or spraying or carry out the slurry silk screen printing of boron source, and obtain the P type window that conforms to the positive electrode pattern; Perhaps, P type silicon substrate shady face is carried out that the phosphorus source ion injects or spraying or carry out the slurry silk screen printing of phosphorus source, and obtain the N type window that conforms to the negative electrode pattern; Wherein, after silk screen printing, dry silicon substrate;
The 4th goes on foot, silicon substrate is heat-treated, and makes the silicon in silicon substrate shady face P type or the N type window diffuseed to form the P-N knot by boron source or phosphorus source;
The 5th goes on foot, the silicon substrate after the heat treatment is cleaned, and removes impurity;
The 6th step, plate two-layer at least antireflective coating at the phototropic face of silicon substrate;
The 7th step, plate antireflective coating at the shady face of silicon substrate;
The 8th step, carry out the slurry silk screen printing of metal positive and negative electrode, make that positive electrode pattern and P type window are superimposed, negative electrode pattern and N type window be superimposed at the shady face of silicon substrate;
The 9th step, sintering slurry obtain metal electrode at the shady face of silicon substrate, accomplish the making of battery sheet.
2. crystalline silicon double-side solar cell production technology according to claim 1 is characterized in that: in the said first step, if said silicon substrate is a monocrystalline silicon piece and a type monocrystalline silicon piece, then carry out alkali making herbs into wool; If said silicon substrate is a polysilicon chip, then carry out sour making herbs into wool.
3. crystalline silicon double-side solar cell production technology according to claim 1 is characterized in that: in said second step, adopt hydrochloric acid solution, washed with de-ionized water to remove the metal ion and the impurity on silicon substrate surface, dring silicon matrix then.
4. crystalline silicon double-side solar cell production technology according to claim 1 is characterized in that: in said the 3rd step, boron source slurry is the silicon China ink slurry that is doped with the III major element, and phosphorus source slurry is the silicon China ink slurry that is doped with the V major element.
5. crystalline silicon double-side solar cell production technology according to claim 1 is characterized in that: in said the 4th step, adopt the silicon substrate after Equipment for Heating Processing is dried the dopant printing to heat-treat; Said Equipment for Heating Processing is a thermal diffusion furnace.
6. crystalline silicon double-side solar cell production technology according to claim 1 is characterized in that: in said the 5th step, adopt hydrochloric acid solution, hydrofluoric acid solution, washed with de-ionized water to remove the slurry and the impurity of silicon substrate remained on surface, dring silicon matrix then.
7. crystalline silicon double-side solar cell production technology according to claim 1 is characterized in that: in said the 6th step and the 7th step, adopt PECVD or PVD method to silicon substrate phototropic face, shady face difference coated with antireflection rete.
8. crystalline silicon double-side solar cell production technology according to claim 1 is characterized in that: in said the 6th step, the refractive index of each layer antireflective coating is different.
9. crystalline silicon double-side solar cell production technology according to claim 1 is characterized in that: in said the 8th step, the silk screen printing of positive and negative electrode is that one-step print is accomplished.
10. crystalline silicon double-side solar cell production technology according to claim 1 is characterized in that: in the said first step, during making herbs into wool, make the side of silicon substrate also obtain having the matte light trapping structure of sunken light action.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210149129XA CN102664217A (en) | 2012-05-14 | 2012-05-14 | Production process of crystalline silicon double-sided solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210149129XA CN102664217A (en) | 2012-05-14 | 2012-05-14 | Production process of crystalline silicon double-sided solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102664217A true CN102664217A (en) | 2012-09-12 |
Family
ID=46773672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210149129XA Pending CN102664217A (en) | 2012-05-14 | 2012-05-14 | Production process of crystalline silicon double-sided solar battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102664217A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103367545A (en) * | 2013-07-08 | 2013-10-23 | 浙江晶科能源有限公司 | Method for synchronously implementing local contact and local doping at back of solar cell by utilizing laser |
| CN106104814A (en) * | 2014-03-12 | 2016-11-09 | 康斯坦茨大学 | For producing the method with the solar cell of the doped region of etch-back simultaneously |
| CN107833931A (en) * | 2017-11-02 | 2018-03-23 | 晶科能源有限公司 | Preparation method of solar battery |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101483205A (en) * | 2008-01-09 | 2009-07-15 | 北京市太阳能研究所有限公司 | Producing technique of back contact solar cell |
| CN101689580A (en) * | 2007-03-16 | 2010-03-31 | Bp北美公司 | solar cells |
| CN102005508A (en) * | 2010-10-25 | 2011-04-06 | 湖南大学 | Method for continuously preparing crystalline silicon solar cell PN (Positive-Negative) junction and antireflection film |
| US20110139230A1 (en) * | 2010-06-03 | 2011-06-16 | Ajeet Rohatgi | Ion implanted selective emitter solar cells with in situ surface passivation |
-
2012
- 2012-05-14 CN CN201210149129XA patent/CN102664217A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101689580A (en) * | 2007-03-16 | 2010-03-31 | Bp北美公司 | solar cells |
| CN101483205A (en) * | 2008-01-09 | 2009-07-15 | 北京市太阳能研究所有限公司 | Producing technique of back contact solar cell |
| US20110139230A1 (en) * | 2010-06-03 | 2011-06-16 | Ajeet Rohatgi | Ion implanted selective emitter solar cells with in situ surface passivation |
| CN102005508A (en) * | 2010-10-25 | 2011-04-06 | 湖南大学 | Method for continuously preparing crystalline silicon solar cell PN (Positive-Negative) junction and antireflection film |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103367545A (en) * | 2013-07-08 | 2013-10-23 | 浙江晶科能源有限公司 | Method for synchronously implementing local contact and local doping at back of solar cell by utilizing laser |
| CN106104814A (en) * | 2014-03-12 | 2016-11-09 | 康斯坦茨大学 | For producing the method with the solar cell of the doped region of etch-back simultaneously |
| US9923116B2 (en) | 2014-03-12 | 2018-03-20 | Universität Konstanz | Method for producing solar cells having simultaneously etched-back doped regions |
| CN106104814B (en) * | 2014-03-12 | 2018-05-25 | 康斯坦茨大学 | For producing the method with the solar cell of the doped region of etch-back simultaneously |
| CN107833931A (en) * | 2017-11-02 | 2018-03-23 | 晶科能源有限公司 | Preparation method of solar battery |
| CN107833931B (en) * | 2017-11-02 | 2020-04-07 | 晶科能源有限公司 | Solar cell preparation method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108666393B (en) | Solar cell and preparation method thereof | |
| CN102820378B (en) | A kind of impurity absorption method improving crystalline silicon matrix useful life | |
| CN109980022A (en) | A kind of p-type tunneling oxide passivation contact solar cell and preparation method thereof | |
| CN101814547A (en) | Method for preparing selective emitter crystalline silicon solar cell | |
| CN103026494A (en) | Silicon solar cell having boron diffusion layer and method for manufacturing same | |
| JP2021061395A (en) | Solar cell and manufacturing method thereof | |
| CN110265497A (en) | N-type crystalline silicon solar cell with selective emitter and preparation method thereof | |
| CN104934500A (en) | Method for preparing back-surface passivation crystalline silicon solar cell with selective emitter | |
| CN105655424A (en) | Full-back-field diffusion N-type silicon-based battery and preparation method thereof | |
| KR20130092494A (en) | Solar cell and method of manufacturing the same | |
| CN113948611B (en) | P-type IBC battery, preparation method thereof, assembly and photovoltaic system | |
| CN110112230A (en) | A kind of preparation method of MWT solar battery | |
| CN101339966A (en) | Post produced velvet production process of solar cell | |
| CN112466990A (en) | Preparation process of high-efficiency heterojunction solar cell | |
| CN102916087A (en) | Solar cell and manufacturing method thereof | |
| CN101950780A (en) | Preparation method of selective emitter solar cell | |
| CN210349847U (en) | P-type tunneling oxide passivation contact solar cell | |
| CN114447142B (en) | N-type TOPCON solar cell and manufacturing method thereof | |
| CN114220882B (en) | Preparation method of solar crystalline silicon cell and solar crystalline silicon cell | |
| CN102097527A (en) | Method for preparing N-type solar cells through masked diffusion | |
| CN105957921B (en) | A kind of method that utilization printing technology prepares N-type silicon IBC solar cells | |
| CN103681971B (en) | A kind of preparation method of N-type back junction solar battery | |
| CN102664217A (en) | Production process of crystalline silicon double-sided solar battery | |
| CN108538958B (en) | N-type IBC battery and preparation method thereof | |
| CN117457805A (en) | TOPCon battery, preparation method thereof and photovoltaic module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120912 |