CN102662141A - Method for evaluating reliability of semiconductor device - Google Patents
Method for evaluating reliability of semiconductor device Download PDFInfo
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- CN102662141A CN102662141A CN2012101795492A CN201210179549A CN102662141A CN 102662141 A CN102662141 A CN 102662141A CN 2012101795492 A CN2012101795492 A CN 2012101795492A CN 201210179549 A CN201210179549 A CN 201210179549A CN 102662141 A CN102662141 A CN 102662141A
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Abstract
The invention provides a method for evaluating the reliability of a semiconductor device, relating to a method for temperature shock and cyclic tests of a finished semiconductor device. The method for evaluating the reliability of the semiconductor device, provided by the invention, can adapt to the temperature test requirements of the semiconductor device and has low cost. 1-50 semiconductor devices of which the quality is qualified by testing are selected, and the method comprises the following steps of: (1) preparing a high-temperature detection solution; (2) preparing a low-temperature detection solution; (3) immersing the semiconductor device into the high-temperature detection solution, then quickly immersing the semiconductor device into the low-temperature detection solution, immersing the semiconductor device into the high-temperature detection solution for the second time, and then immersing the semiconductor device into the low-temperature detection solution for the second time; and (4) taking the semiconductor device out of the low-temperature detection solution, cleaning with ethanol, drying, and then carrying out electrical detection on the semiconductor device after the ethanol cleaning and drying processes are finished. The method provided by the invention is convenient and easy to operate, is pollution-free, and can be popularized into a test evaluation means for whole industries.
Description
Technical field
The present invention relates to the test method of semiconductor devices when the temperature acute variation related in particular to finished product semiconductor devices temperature shock, cyclic test method.
Technical background
Along with the client progressively improves for the requirement of semiconductor material high temperature resistance Weldability, inside plants has also become requisite project in the new product development process for material characteristic evaluation in this respect.Along with the rise of solar energy industry, the environment for use of semiconductor product becomes more abominable, and the client is harsh more to the performance requirement of semiconductor devices.Therefore need carry out temperature shock and cyclic test to semiconductor devices,, estimate the reliable rows of product intuitively to obtain the high temperature performance data of device.
At present, for afore-mentioned test, generally adopting salt fog cabinet is testing equipment, and its intensification/rate of temperature fall is not less than 30 ℃/minute.Range of temperature is very big, and testing severity simultaneously also increases along with the increase of rate of temperature change.Temperature shock test mainly is that mechanical load mechanism is different with the difference of temperature cycling test.Temperature shock test mainly investigates because the inefficacy that creep and fatigue damage cause, and temperature cycles is mainly investigated because the inefficacy that shear fatigue causes.But all things considered, above-mentioned testing equipment are not very suitable for semiconductor devices, the one, and equipment cost height, the 2nd, the requirement of multiple material in the incompatibility semiconductor devices (semi-conductor chip, metal framework, organic packaging body), structure.
Summary of the invention
The present invention is directed to above problem, a kind of humid test needs that can adapt to semiconductor devices are provided, and the method for the low assessment semiconductor device reliability of cost.
Technical scheme of the present invention is: choose through 1 ~ 50 of the qualified semiconductor devices of quality inspection, carry out according to the following steps:
1), preparation high temperature detects liquid; Glycerine is heated to 250 ~ 260 ℃, insulation, for use;
2), formulating low-temperature detects liquid; Anti freezing solution is cooled to-38 ~-40 ℃, guarantees that anti freezing solution is still for liquid;
3), said semiconductor devices immersed said high temperature detect in the liquid, leave standstill 2-4min; Immerse said low temperature then rapidly and detect in the liquid, leave standstill 0.8-1.2min; Immerse for the second time said high temperature immediately again and detect in the liquid, leave standstill 1.5-2.5min; Immerse for the second time said low temperature immediately again and detect in the liquid, leave standstill 0.8-1.2min;
4), said semiconductor devices detected the liquid from said low temperature takes out, adopt that ethanol cleans, oven dry, finish.
Behind said ethanol cleaning, baking operation, more said semiconductor devices is carried out electrical detection.
The present invention is similar to a kind of test method of material being carried out thermal shock, and its principle is to be applied to material itself through the rapid variation with external temperature, to a kind of pure mechanical damage of material production, with the ability of the anti-mechanical stress of assessment material.The present invention is according to the characteristic of semiconductor devices; Adopted and existed comparatively general glycerine, anti freezing solution to realize Performance Evaluation on the market semiconductor material through applying specific temperature conditions; Easy to operate; Pollution-free, and experimental period is shorter, can it be extended to a kind of test assessment means of whole industry.
Embodiment
Technical scheme of the present invention is: choose through 1 ~ 50 of the qualified semiconductor devices of quality inspection, carry out according to the following steps:
1), preparation high temperature detects liquid; Glycerine is heated to 250 ~ 260 ℃, insulation, for use; Use glycerine, be not easy boiling.In addition, because glycerine is water miscible, be convenient to the later stage removing.
2), formulating low-temperature detects liquid; Anti freezing solution is cooled to-38 ~-40 ℃, guarantees that anti freezing solution is still for liquid;
3), said semiconductor devices immersed said high temperature detect in the liquid, leave standstill 2-4min; Immerse said low temperature then rapidly and detect in the liquid, leave standstill 0.8-1.2min; Immerse for the second time said high temperature immediately again and detect in the liquid, leave standstill 1.5-2.5min; Immerse for the second time said low temperature immediately again and detect in the liquid, leave standstill 0.8-1.2min;
4), said semiconductor devices detected the liquid from said low temperature takes out, adopt that ethanol cleans, oven dry, finish.
Behind said ethanol cleaning, baking operation, more said semiconductor devices is carried out electrical detection.
Further specify the present invention below in conjunction with concrete experimental example:
Test instrument and material: glycerine, anti freezing solution, electric furnace, freezing equipment, container, thermometer, strainer, testing tool
Test procedure:
1, test material is tested, guaranteed that material is a non-defective unit, 20 of quantity,
2, glycerine is heated to 260 ℃, anti freezing solution descended freezing 1 hour at-40 ℃,
3, two kinds of ready liquid are placed, material is placed 3min in glycerine, put into refrigerating fulid 1min then rapidly.Put back to rapidly again and place 2min in the glycerine.Take out rapidly, be placed into 1min in the refrigerating fulid, then material is cleaned with IPA (ethanol), oven dry, battery of tests is accomplished.(manual time-keeping is used in test, reduces time error as far as possible)
4, test material is electrical, sees if there is the situation of inefficacy, according to the quality of how much judging material property that has or not inefficacy and inefficacy quantity;
5, abovely be a kind of test condition of providing, can test condition be promoted, like what, the control of fluid temperature etc. of the quantity of each test material, amount of liquid;
6, lime light: glycerine high temperature, take care; Anti freezing solution can not be exposed to external environment condition for a long time, needs proceed to test after two groups of tests in freezing again 1 hour again;
Characteristics of the present invention are:1, experiment equipment is prone to obtain, and is simple to operation; 2, can reach the purpose of assessment different materials through the regulating and controlling temperature of thermometer in the process of the test; 3, compare with other fail-tests, the time is shorter, can obtain test findings rapidly, shortens assessment cycle.In addition, through temperature shock, circulation, can also play the effect that discharges the semiconductor device inside structural stress.
Claims (2)
1. method of assessing semiconductor device reliability is chosen through 1 ~ 50 of the qualified semiconductor devices of quality inspection, it is characterized in that, carries out according to the following steps:
1), preparation high temperature detects liquid; Glycerine is heated to 250 ~ 260 ℃, insulation, for use;
2), formulating low-temperature detects liquid; Anti freezing solution is cooled to-38 ~-40 ℃, guarantees that anti freezing solution is still for liquid;
3), said semiconductor devices immersed said high temperature detect in the liquid, leave standstill 2-4min; Immerse said low temperature then rapidly and detect in the liquid, leave standstill 0.8-1.2min; Immerse for the second time said high temperature immediately again and detect in the liquid, leave standstill 1.5-2.5min; Immerse for the second time said low temperature immediately again and detect in the liquid, leave standstill 0.8-1.2min;
4), said semiconductor devices detected the liquid from said low temperature takes out, adopt that ethanol cleans, oven dry, finish.
2. a kind of method of assessing semiconductor device reliability according to claim 1 is characterized in that, behind said ethanol cleaning, baking operation, more said semiconductor devices is carried out electrical detection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101795492A CN102662141A (en) | 2012-06-04 | 2012-06-04 | Method for evaluating reliability of semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101795492A CN102662141A (en) | 2012-06-04 | 2012-06-04 | Method for evaluating reliability of semiconductor device |
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| CN102662141A true CN102662141A (en) | 2012-09-12 |
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| CN2012101795492A Pending CN102662141A (en) | 2012-06-04 | 2012-06-04 | Method for evaluating reliability of semiconductor device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110736908A (en) * | 2019-09-16 | 2020-01-31 | 北京建筑大学 | multidimensional packaging structure-oriented chip reliability assessment method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000046712A (en) * | 1998-07-30 | 2000-02-18 | Canon Inc | Liquid phase-type thermal shock test device |
| JP2002174577A (en) * | 2000-12-07 | 2002-06-21 | Ricoh Co Ltd | Apparatus and method for thermal shock test |
| CN1563936A (en) * | 2004-03-30 | 2005-01-12 | 上海理工大学 | heat impact testing method for testing service life of heat exchanger |
| CN1603778A (en) * | 2004-11-05 | 2005-04-06 | 中国科学院上海技术物理研究所 | High and low temperature recycle unit with wide temperature range |
| CN201107385Y (en) * | 2007-11-07 | 2008-08-27 | 深圳市同洲电子股份有限公司 | Semiconductor high and low temperature experiment instrument |
-
2012
- 2012-06-04 CN CN2012101795492A patent/CN102662141A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000046712A (en) * | 1998-07-30 | 2000-02-18 | Canon Inc | Liquid phase-type thermal shock test device |
| JP2002174577A (en) * | 2000-12-07 | 2002-06-21 | Ricoh Co Ltd | Apparatus and method for thermal shock test |
| CN1563936A (en) * | 2004-03-30 | 2005-01-12 | 上海理工大学 | heat impact testing method for testing service life of heat exchanger |
| CN1603778A (en) * | 2004-11-05 | 2005-04-06 | 中国科学院上海技术物理研究所 | High and low temperature recycle unit with wide temperature range |
| CN201107385Y (en) * | 2007-11-07 | 2008-08-27 | 深圳市同洲电子股份有限公司 | Semiconductor high and low temperature experiment instrument |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110736908A (en) * | 2019-09-16 | 2020-01-31 | 北京建筑大学 | multidimensional packaging structure-oriented chip reliability assessment method |
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Application publication date: 20120912 |