CN202994938U - Apparatus for testing multi-field service characteristic of microelectronic product - Google Patents
Apparatus for testing multi-field service characteristic of microelectronic product Download PDFInfo
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- CN202994938U CN202994938U CN201220715484.4U CN201220715484U CN202994938U CN 202994938 U CN202994938 U CN 202994938U CN 201220715484 U CN201220715484 U CN 201220715484U CN 202994938 U CN202994938 U CN 202994938U
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Abstract
The utility model discloses an apparatus for testing the multi-field service characteristic of a microelectronic product, belonging to the technical field of a microelectronic product reliability testing and assessing device. The apparatus has a separable structure and is formed by a control cabinet and an experiment box, wherein a temperature control system, a current loading system and a signal testing and collecting system are integrated inside the control cabinet, the temperature control system controls a cooling system and a heater to adjust the temperature and temperature change inside the experiment box, the current loading system exerts a current load on a sample to be detected, the signal testing and collecting system tests, collects and stores voltage and resistance signals of the sample to be detected, a low temperature refrigeration system is connected with the experiment box through a refrigeration pipeline, the experiment box is formed by a box body housing, a temperature insulating layer, a transparent observation window, a heater, a fan and a sample supporting system, and the sample supporting system is formed by a sample carrier, a testing board and a lead adapter interface. The apparatus for testing the multi-field service characteristic of a microelectronic product can realize the acceleration service characteristic test and the service life prediction of the microelectronic product under multi-field conditions.
Description
Technical field
The utility model relates to microelectronic product reliability testing and assessment apparatus technical field, is specifically related to many military service characteristic testers of a kind of microelectronic product.
Background technology
In modern microelectronics industry, interconnection system technology for making be all usually with interconnection circuit physical deposition or chemical adhesive on semiconductor material or superpolymer dielectric material substrate, in these physics or chemical enginnering process, usually be subject to the strong constraint effect of matrix in the interconnection body circuit material of preparation and produce very high technique unrelieved stress; In addition, when electric current causes temperature variation by solder joint, because scolder and the different meetings of baseplate material thermal expansivity cause producing very strong thermal stress in solder joint; Therefore microelectronic product will be subject to the coupling of power and electricity simultaneously in long-term use procedure.Under many couplings of power electric heating, temperature and stress field can be accelerated the generation that the electricity such as electromigration causes damage, and the function of current also can promote the formation of defective in material and the reduction of material simultaneously, and then the failure procedure of expedite product under stress field.Therefore, the military service of microelectronic product under power electric coupling effect can not be looked the simple superposition of doing stress and two kinds of effects of electric current, but exists complicated association and coupling effect.
At present the reliability assessment under power, heat, electric single game condition and life prediction all have method of testing, standard and equipment than system for microelectronic product, but the reliability testing for microelectronic product under power, heat, many coupling conditions of electricity still lacks corresponding measuring technology with assessment, more there is no relevant test equipment.
The utility model content
The purpose of this utility model is to provide a kind of microelectronic product many military service characteristic testers, and this tester is to the test equipment of reliability testing and the assessment of microelectronic product under power, heat, many coupling conditions of electricity.
The technical solution of the utility model is:
Many military service characteristic testers of a kind of microelectronic product comprise experimental box, switch board, temperature control system, well heater, cooling system, signal testing and acquisition system, current load system and sample back-up system; Temperature control system, signal testing and acquisition system, current load system and cooling system are arranged in switch board; Wherein:
Described well heater is arranged at the experimental box inner lower, described cooling system is inner through refrigeration piping insert experiment case, described temperature control system is connected with cooling system with described well heater, is used for controlling according to predefined temperature value the duty of described well heater and cooling system.
Described sample back-up system is placed in experimental box inside, comprises sample carrier and test board, and test board comprises motherboard and daughter board; Described motherboard is pegged graft and is fixed in special purpose interface on sample carrier, and some slots are set on motherboard, and daughter board is plugged in respectively in each slot on motherboard, and specimen is electrically connected to daughter board.
Described current load system is electrically connected to specimen by the daughter board on test board, is used for treating the micrometer electronic product and applies current load.
Described signal testing and acquisition system are electrically connected to specimen by the daughter board on test board, be used for testing and gathering electric current, voltage, resistance and the temperature signal of microelectronic product to be measured, adopt the multi-channel digital acquisition mode to carry out DATA REASONING and storage, the data transmission of storage stores to treat subsequent analysis and processing in computing machine, and can realize the sample fails warning according to impedance variation; Temperature control, current load and the signal testing of tester controlled by computing machine is unified.
Described experimental box upper inside mounting temperature sensor (thermopair), temperature sensor is connected with described temperature control system, and the temperature that is used for the experimental box inside that will record passes to described temperature control system.
Described sample carrier comprises base plate, heat pipe, heat radiator and special purpose interface; The sample carrier base plate adopts stainless steel or quartz glass to make, and base plate is provided with heat pipe and heat radiator is used for the specimen heat radiation, and the side on the base plate one side arranges special purpose interface.
Described experimental box comprises cabinet shell, heat-insulation layer, support and the chamber door that can open and close, heat-insulation layer is used for keeping the experimental box internal temperature inside the shell, be placed on the experimental box middle part and be used for placing the sample back-up system, transparent windows is set on chamber door.
Described experimental box sidewall signalization card extender, the current load of inputting during test and the test signal of output are all transferred via Signals Transfer Board, and by the related device in wire Access Control cabinet.
Described experimental box inner top arranges blower fan, is used for air in the circulation experiment case, keeps the distributing equilibrium of experiment the temperature inside the box.
Above-mentioned tester operating temperature range is-50 ~ 200 ℃, 10 ~ 50 ℃/minute of programming rates, and 10 ~ 50 ℃/minute of cooling rates, in 15 ~ 120 minutes temperature cycles cycles, measuring current density is 1 * 10
3~ 9.9 * 10
4A/cm
2
The beneficial effects of the utility model are:
1, the utility model has been filled up the blank of microelectronic product reliability testing under many coupling conditions of power electric heating and assessment equipment.
2, the utility model Range of measuring temp and measuring current density range are large, applied widely, applicable to reliability testing and the assessment of the various encapsulating structure microelectronic products such as welded ball array encapsulation (BGA), chip size packages (CSP), wafer level packaging (WLP), three-dimension packaging (3D) and system in package (SIP).
3, the utility model sample is easy for installation, simple to operate, and automaticity is higher.
Description of drawings
Fig. 1 is the structural representation of many military service characteristic testers of the utility model microelectronic product.
Fig. 2 is the structural representation of sample carrier in the utility model tester.
Fig. 3 is test plate structure schematic diagram in the utility model tester.
Fig. 4 is the CSP interconnect package infrastructure product electrical resistance test duration change curve in embodiment 1.
Fig. 5 is the weber analytic curve of the CSP interconnect package infrastructure product service life in embodiment 1.
Fig. 6 is that CSP interconnect package infrastructure product maximum allowed current in embodiment 1 is with temperature change curve (service life＞100,000 hour).
Fig. 7 is the weber analytic curve of Cu pole interconnection encapsulating structure product service life in embodiment 2.
In figure: the 1-experimental box; The 2-switch board; The 3-temperature control system; 4-current load system; 5-signal testing and acquisition system; The 6-temperature sensor; The 7-cooling system; The 8-well heater; The 9-refrigeration piping; The 10-transparent windows; The 11-blower fan; The 12-Signals Transfer Board; 13-sample back-up system; 14 base plates; The 15-motherboard; The 16-heat pipe; The 17-heat radiator; The 18-special purpose interface; The 19-slot; The 20-support.
Embodiment
Below in conjunction with drawings and Examples in detail the utility model is described in detail.
As shown in Figure 1, many military service characteristic testers of the utility model microelectronic product comprise experimental box (1), switch board (2), temperature control system (3), well heater (8), cooling system (7), signal testing and acquisition system (5), current load system (4) and sample back-up system (13); Temperature control system (3), signal testing and acquisition system (5), current load system (4) and cooling system (7) are arranged in switch board (2).
Described well heater (8) is arranged at experimental box (1) inner lower, described cooling system (7) is through refrigeration piping (9) insert experiment case (1) inside, described temperature control system (3) is connected with cooling system (7) with described well heater (8), experimental box (1) upper inside mounting temperature sensor (thermopair) (6), temperature sensor (6) is connected with described temperature control system (3), and the inner temperature of experimental box (1) that is used for recording passes to described temperature control system (3).
Described sample back-up system (13) is placed in experimental box (1) inside, comprises sample carrier and test board, and test board comprises motherboard (15) and daughter board; Described motherboard (15) is pegged graft and to be fixed in special purpose interface (18) on sample carrier, and some slots (19) are set on motherboard (15), and daughter board is plugged in respectively in each slot (19) on motherboard (15), and specimen is electrically connected to daughter board.
Described current load system (4) is electrically connected to specimen by the daughter board on test board, is used for treating the micrometer electronic product and applies current load;
Described signal testing and acquisition system (5) are electrically connected to specimen by the daughter board on test board, be used for testing and gathering electric current, voltage, resistance and the temperature signal of microelectronic product to be measured, adopt the multi-channel digital acquisition mode to carry out DATA REASONING and storage, the data transmission of storage stores to treat subsequent analysis and processing in computing machine, and can realize the sample fails warning according to impedance variation; Temperature control, current load and the signal testing of tester controlled by computing machine is unified.
Described sample carrier comprises base plate (14), heat pipe (16), heat radiator (17) and special purpose interface (18); Sample carrier base plate (14) adopts stainless steel or quartz glass to make, base plate (14) is provided with some heat pipes (16), a side on the one side of base plate (14) arranges special purpose interface (18) and is used for grafting motherboard (15), and special purpose interface (18) matches with the end that motherboard (15) inserts; Some heat radiator (17) are set on the another side of base plate to be used for specimen is dispelled the heat.
Described experimental box (1) comprises cabinet shell, heat-insulation layer, support (20) and the chamber door that can open and close, heat-insulation layer is used for keeping experimental box (1) internal temperature inside the shell, support (20) is used for placing sample back-up system (13) in the middle part of being placed in experimental box (1), and transparent windows (10) is set on chamber door.On experimental box (1) sidewall, Signals Transfer Board (12) is housed, the current load of inputting during test and the test signal of output are all transferred via Signals Transfer Board (12), and are connected by the related device in wire and switch board (2); Experimental box (1) inner top also arranges the blower fan (11) that keeps the temperature inside the box distributing equilibrium.
Described tester operating temperature range is-50 ~ 200 ℃, 10 ~ 50 ℃/minute of programming rates, and 10 ~ 50 ℃/minute of cooling rates, in 15 ~ 120 minutes temperature cycles cycles, measuring current density is 1 * 10
3~ 9.9 * 10
4A/cm
2
Utilize above-mentioned tester under many couplings of power electric heating during the microelectronic product reliability testing method of operating as follows:
At first measure the resistance of testing sample during test, surpass threshold value as the sample fails criterion take the sample resistance variations in test, the resistance variations threshold range is set as the 10-50% of sample initial resistance.Then testing sample is electrically connected on the test daughter board.To test daughter board is inserted in the slot (19) of testing motherboard (15) one by one again.For guaranteeing integrality and the reliability of data, under every set condition, the specimen number is no less than 15.
To test motherboard (15) and be connected on sample carrier by special purpose interface (18), connect electric current input and output lead-in wire and test lead to card extender (12) inboard.Current load system (4) is connected to the electric current input and output terminal (test under single thermal cycle conditions do not connect current load system) in card extender (12) outside, signal testing and acquisition system (5) is connected to the test signal end of card extender (12) outer end.With temperature control system (3) according to preset temperature (50 ° of C～200 ° C are adjustable) pattern setting (constant temperature or temperature cycles pattern, need set temperature circulation minimum temperature, maximum temperature, temperature retention time, programming rate and cooling rate in temperature cycles mode pattern), close the experiment chamber door, start blower fan (11), open cooling system (7) or/and well heater (8).In experimental box (1) temperature reach design temperature and stable after, the variation that sample resistance was measured and recorded to current load system (4) and signal testing and acquisition system (5) is recorded the sample resistance variations over the time (out-of-service time) of threshold value.Stop experiment after 80% sample fails.Adopt weber analysis to provide the service life of product.
The method of utilizing the utility model tester to carry out microelectronic product reliability testing under many couplings of power electric heating is: at first the method tests the mean time to failure, MTTF of sample under the electromigration of microelectronic product single game, single thermal cycle and many coupling conditions of power electric heating under specific condition of experiment, then by the parameter that obtains in the service life judgement schematics under many coupling conditions and test, calculate the service life of microelectronic product under different current densities and temperature cycles condition; Specifically comprise the steps:
(1) measure the initial resistance of testing sample, set the resistance variations threshold value.
(2) under constant temperature, specimen is applied current load, the resistance variations of specimen; Surpass threshold value as the sample fails criterion take the sample resistance variations, the mean time to failure, MTTF of specimen (life-span) MTTF; Draw electromigration pre-exponential factor A, current constant n and electromigration activation energy Q according to formula (1)
em
Wherein: j is current density, and k is Boltzmann constant, and T is temperature.
(3) resistance variations of specimen under temperature cycling load; Surpass threshold value as the sample fails criterion take the sample resistance variations, the mean time to failure, MTTF N of specimen
f0Then draw non-resilient range of shear strain Δ γ according to formula (2)
0
Wherein, fatigue ductility index c and fatigue ductile coefficient ε
fConstant for being determined by material self can check in by fatigue of materials handbook and pertinent literature, also can obtain by the strain fatigue experiment measuring.
(4) resistance variations of specimen under temperature cycling load and current load coupling; Surpass threshold value as the sample fails criterion take the sample resistance variations, the mean time to failure, MTTF N of specimen under many coupling conditions
fThen draw the front coupling factor β of index and current coupling factor l according to formula (3).
Wherein, Δ t is the temperature cycles cycle.
(5) calculate the service life of microelectronic product: the service life that calculates microelectronic product under different current densities and temperature cycles condition according to formula (3).
Described specific condition of experiment refers to that this method of testing adopts and accelerates in experimental program, select higher than the current density under actual service conditions, temperature and rate temperature change; Wherein: the measuring current density range is 1 * 10
3~ 9.9 * 10
4A/cm
2Range of measuring temp is-50 ~ 200 ° of C, 10 ~ 50 ° of programming rates C/ minute, cooling rate 10-50 ° C/ minute, 15 ~ 120 minutes temperature cycles cycles; ° C is adjustable in the minimum temperature of temperature cycles-50 ~ 20, and temperature retention time 1 ~ 45 minute is adjustable; 60 ~ 200 ° of C are adjustable for the maximum temperature of temperature cycles, and temperature retention time 1 ~ 45 minute is adjustable.
The described constant temperature of step (2) refers in temperature in-50 ~ 200 ° of C scopes and keeps a certain temperature-resistant.
Described in step (1), the setting range of resistance variations threshold value is 10 ~ 50% of sample initial resistance.
In step (2)-(4), for guaranteeing integrality and the reliability of test data, under every set condition, the specimen number is no less than 15.
Embodiment 1
Service life prediction under many coupling conditions of CSP interconnect package structure sample, step is as follows:
(1) measure the resistance of testing sample, setting the resistance variations threshold value is 30% of sample initial resistance.
(2) single electromigration experiment of test implemented under isoperibol as a comparison.The CSP sample is divided into 9 groups, and every group of 15 samples, sample adopt series system to be connected respectively on constant current source.Test is carried out under three groups of different current densities and three groups of different temperatures, and current density is respectively 4.4 * 10
3A/cm
2, 4.7 * 10
3A/cm
2, 5.0 * 10
3A/cm
2The experimental situation temperature is respectively 30 ° of C, 50 ° of C, 70 ° of C.Surpass threshold value as the sample fails criterion take the sample resistance variations in test.
(3) the single thermal cycle experiment of test is implemented under temperature cycling load as a comparison, selects 1 group of 15 CSP sample.The probe temperature range of DO is-40 ~ 125 ° of C, 15 ° of programming rates C/ minute; 15 ° of cooling rates C/ minute, temperature retention time 20 minutes, 62 minutes temperature cycles cycles.Surpass threshold value as the sample fails criterion take the sample resistance variations in test.
(4) reliability testing under many coupling conditions is implemented under temperature cycling load and current load coupling.The CSP sample is divided into 3 groups, and every group of 15 samples, sample adopt series system to be connected respectively on constant current source.Test is carried out under three groups of different current densities, is respectively 2.4 * 10
3A/cm
2, 2.7 * 10
3A/cm
2, 3.0 * 10
3A/cm
2The probe temperature range of DO is-40 ~ 125 ° of C, 15 ° of programming rates C/ minute; 15 ° of cooling rates C/ minute, temperature retention time 20 minutes, 62 minutes temperature cycles cycles.Surpass threshold value as the sample fails criterion take the sample resistance variations in test.
(5) according to test result, calculate according to formula (1) (2) (3), can draw related experiment parameter and speedup factor, be specially: draw electromigration pre-exponential factor A, current constant n and electromigration activation energy Q according to step (2) test result and formula (1)
emDraw non-resilient range of shear strain Δ γ according to step (3) test result and formula (2)
0, fatigue ductility index c and fatigue ductile coefficient ε in the present embodiment formula (2)
fCheck in (W.Engelmaier by document, Fatigue Life of Leadless Chip Carrier SolderJoints During Power Cycling, IEEE Transactions on Components Hybrids AndManufacturing Technology 6:3 (1983) 232-237); Draw the front coupling factor β of index and current coupling factor l according to step (4) test result and formula (3); Obtain related experiment parameter and speedup factor substitution formula (1) and and then calculate the service life of CSP interconnect package structure electronic product under different current densities and temperature cycles condition according to formula (1) above-mentioned.
CSP interconnect package infrastructure product electrical resistance test duration change curve (under many coupling conditions) as shown in Figure 4 in the present embodiment.
The weber analytic curve of CSP interconnect package infrastructure product service life in the present embodiment (many coupling condition under) as shown in Figure 5.
In the present embodiment, CSP interconnect package infrastructure product maximum allowed current (under many coupling conditions) with temperature change curve (service life＞100,000 hour) as shown in Figure 6.
Embodiment 2
Service life prediction under many coupling conditions of Cu pole interconnection encapsulating structure sample, step is as follows:
(1) measure the resistance of testing sample, setting the resistance variations threshold value is 20% of sample initial resistance.
(2) single electromigration experiment of test implemented under isoperibol as a comparison.Cu post sample is divided into 9 groups, and every group of 20 samples, sample adopt series system to be connected respectively on constant current source.Test is carried out under three groups of different current densities and three groups of different temperatures, and current density is respectively 1.1 * 10
4A/cm
2, 1.2 * 104
4A/cm
2, 1.3 * 10
4A/cm
2The experimental situation temperature is respectively 30 ° of C, 50 ° of C, 70 ° of C.Surpass threshold value as the sample fails criterion take the sample resistance variations in test.
(3) the single thermal cycle experiment of test is implemented under temperature cycling load as a comparison.Select 1 group 20 Cu post samples.The probe temperature range of DO is-40 ~ 125 ° of C, 15 ° of programming rates C/ minute; 15 ° of cooling rates C/ minute, temperature retention time 20 minutes, 62 minutes temperature cycles cycles.Surpass threshold value as the sample fails criterion take the sample resistance variations in test.
(4) reliability testing under many coupling conditions is implemented under temperature cycling load and current load coupling.Cu post sample is divided into 3 groups, and every group of 20 samples, sample adopt series system to be connected respectively on constant current source.Test is carried out under three groups of different current densities, is respectively 7.2 * 10
3A/cm
2, 8.1 * 10
3A/cm
2, 9.0 * 10
3A/cm
2The probe temperature range of DO is-40 ~ 125 ° of C, 15 ° of programming rates C/ minute; 15 ° of cooling rates C/ minute, temperature retention time 20 minutes, 62 minutes temperature cycles cycles.Surpass threshold value as the sample fails criterion take the sample resistance variations in test.
(5) according to test result, calculate according to formula (1) (2) (3), can draw related experiment parameter and speedup factor, be specially: draw electromigration pre-exponential factor A, current constant n and electromigration activation energy Q according to step (2) test result and formula (1)
emDraw non-resilient range of shear strain Δ γ according to step (3) test result and formula (2)
0, fatigue ductility index c and fatigue ductile coefficient ε in the present embodiment formula (2)
fCheck in (W.Engelmaier by document, Fatigue Life of Leadless Chip Carrier SolderJoints During Power Cycling, IEEE Transactions on Components Hybrids AndManufacturing Technology 6:3 (1983) 232-237); Draw the front coupling factor β of index and current coupling factor l according to step (4) test result and formula (3); Obtain related experiment parameter and speedup factor substitution formula (1) and and then calculate the service life of Cu pole interconnection encapsulating structure electronic product under different current densities and temperature cycles condition according to formula (1) above-mentioned.The weber analytic curve (under many coupling conditions) as shown in Figure 7 of Cu pole interconnection encapsulating structure product service life in the present embodiment.
Above-described embodiment is the better embodiment of the utility model; but embodiment of the present utility model is not restricted to the described embodiments; other any do not deviate from change, the modification done under Spirit Essence of the present invention and principle, substitutes, combination, simplify; all should be the substitute mode of equivalence, within being included in protection domain of the present utility model.
Claims (7)
1. many military service characteristic testers of a microelectronic product, it is characterized in that: this tester comprises experimental box (1), switch board (2), temperature control system (3), well heater (8), cooling system (7), signal testing and acquisition system (5), current load system (4) and sample back-up system (13); Temperature control system (3), signal testing and acquisition system (5), current load system (4) and cooling system (7) are arranged in switch board (2); Wherein:
Described well heater (8) is arranged at experimental box (1) inner lower, described cooling system (7) is through refrigeration piping (9) insert experiment case (1) inside, described temperature control system (3) is connected with cooling system (7) with described well heater (8), is used for controlling according to predefined temperature value the duty of described well heater (8) and cooling system (7);
Described sample back-up system (13) is placed in experimental box (1) inside, comprises sample carrier and test board, and test board comprises motherboard (15) and daughter board; Described motherboard (15) is pegged graft and to be fixed in special purpose interface (18) on sample carrier, and some slots (19) are set on motherboard (15), and daughter board is plugged in respectively in each slot (19) on motherboard (15), and specimen is electrically connected to daughter board;
Described current load system (4) is electrically connected to specimen by the daughter board on test board, is used for treating the micrometer electronic product and applies current load;
Described signal testing and acquisition system (5) are electrically connected to specimen by the daughter board on test board, be used for testing and gathering electric current, voltage, resistance and the temperature signal of microelectronic product to be measured, adopt the multi-channel digital acquisition mode to carry out DATA REASONING and storage, the data transmission of storage stores to treat subsequent analysis and processing in computing machine, and can realize the sample fails warning according to impedance variation.
2. many military service characteristic testers of microelectronic product according to claim 1, it is characterized in that: described experimental box (1) upper inside mounting temperature sensor (6), temperature sensor (6) is connected with described temperature control system (3), and the inner temperature of experimental box (1) that is used for recording passes to described temperature control system (3).
3. many military service characteristic testers of microelectronic product according to claim 1, it is characterized in that: described sample carrier comprises base plate (14), heat pipe (16), heat radiator (17) and special purpose interface (18); Sample carrier base plate (14) adopts stainless steel or quartz glass to make, and base plate (14) is provided with heat pipe (16) and heat radiator (17) is used for the specimen heat radiation, and the side on base plate (14) one side arranges special purpose interface (18).
4. many military service characteristic testers of microelectronic product according to claim 1, it is characterized in that: described experimental box (1) comprises cabinet shell, heat-insulation layer, support (20) and the chamber door that can open and close, heat-insulation layer is used for keeping experimental box (1) internal temperature inside the shell, support (20) is used for placing sample back-up system (13) in the middle part of being placed in experimental box (1), and transparent windows (10) is set on chamber door.
5. many military service characteristic testers of microelectronic product according to claim 4, it is characterized in that: described experimental box (1) sidewall signalization card extender (12), the current load of inputting during test and the test signal of output are all transferred via Signals Transfer Board (12), and by the related device in wire Access Control cabinet (2).
6. many military service characteristic testers of microelectronic product according to claim 4, it is characterized in that: described experimental box (1) inner top arranges blower fan (11), is used for interior the air of circulation experiment case (1), the distributing equilibrium of the interior temperature of maintenance experimental box (1).
7. many military service characteristic testers of according to claim 1-6 arbitrary described microelectronic products, it is characterized in that: described tester operating temperature range is-50 ~ 200 ℃, 10 ~ 50 ℃/minute of programming rates, 10 ~ 50 ℃/minute of cooling rates, in 15 ~ 120 minutes temperature cycles cycles, measuring current density is 1 * 10
3~ 9.9 * 10
4A/cm
2
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103884928A (en) * | 2012-12-21 | 2014-06-25 | 中国科学院金属研究所 | Microelectronic product reliability test platform under force electrothermal multi-field coupling effect |
| CN104344988A (en) * | 2014-11-04 | 2015-02-11 | 株洲南车时代电气股份有限公司 | BGA (ball grid array) welding point acceleration service life prediction method |
| CN104391203A (en) * | 2014-12-01 | 2015-03-04 | 工业和信息化部电子第五研究所 | Electric device test monitoring device and electric device test monitoring method |
| CN105182120A (en) * | 2015-08-31 | 2015-12-23 | 武汉博富通试验设备有限公司 | Novel electronic on-line detection device |
| CN108225963A (en) * | 2017-12-30 | 2018-06-29 | 广州兴森快捷电路科技有限公司 | PCB design method based on the test of BGA welding spot reliabilities |
-
2012
- 2012-12-21 CN CN201220715484.4U patent/CN202994938U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103884928A (en) * | 2012-12-21 | 2014-06-25 | 中国科学院金属研究所 | Microelectronic product reliability test platform under force electrothermal multi-field coupling effect |
| CN104344988A (en) * | 2014-11-04 | 2015-02-11 | 株洲南车时代电气股份有限公司 | BGA (ball grid array) welding point acceleration service life prediction method |
| CN104344988B (en) * | 2014-11-04 | 2017-01-18 | 株洲南车时代电气股份有限公司 | BGA (ball grid array) welding point acceleration service life prediction method |
| CN104391203A (en) * | 2014-12-01 | 2015-03-04 | 工业和信息化部电子第五研究所 | Electric device test monitoring device and electric device test monitoring method |
| CN105182120A (en) * | 2015-08-31 | 2015-12-23 | 武汉博富通试验设备有限公司 | Novel electronic on-line detection device |
| CN108225963A (en) * | 2017-12-30 | 2018-06-29 | 广州兴森快捷电路科技有限公司 | PCB design method based on the test of BGA welding spot reliabilities |
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