CN102651452A - White light electrogenerated light-emitting apparatus - Google Patents
White light electrogenerated light-emitting apparatus Download PDFInfo
- Publication number
- CN102651452A CN102651452A CN2011100450264A CN201110045026A CN102651452A CN 102651452 A CN102651452 A CN 102651452A CN 2011100450264 A CN2011100450264 A CN 2011100450264A CN 201110045026 A CN201110045026 A CN 201110045026A CN 102651452 A CN102651452 A CN 102651452A
- Authority
- CN
- China
- Prior art keywords
- layer
- thickness
- white
- light
- electroluminescence device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a white light electrogenerated light-emitting apparatus, which comprises the structure including a substrate, a conductive layer, a hole injecting layer, a hole transmitting layer, an electron stop layer, a light emitting layer, a hole stop layer, an electron transmitting layer, an electron injecting layer and a cathode layer in sequence; the light emitting layer is a composite layer structure, and the composite layer structure comprises the following layers of a red phosphor light emitting layer, a first interval layer, a blue light emitting layer, a second interval layer and a green phosphor light emitting layer in sequence; and the red phosphor light emitting layer is prepared on the surface of the electron stop layer, and the hole stop layer is prepared on the surface of the green phosphor light emitting layer. According to the invention, light emitting layers of blue light emitting materials, red and green light phosphor materials are applied in the white light electrogenerated light-emitting apparatus, red and green light phosphor light emitting layers are respectively arranged on both sides of the blue light emitting layer, therefore the triplet state energy of blue light can be fully captured, and the light emitting efficiency is further increased.
Description
Technical field
The present invention relates to a kind of white-light electroluminescence device.
Background technology
1987, the C.W.Tang of U.S. Eastman Kodak company and VanSlyke reported the breakthrough in the organic electroluminescent research.Utilize the ultrathin film technology to prepare high brightness, high efficiency double-deck organic electroluminescence device (OLED).In this double-deck device, brightness reaches 1000cd/m under the 10V
2, its luminous efficiency is that 1.51lm/W, life-span were greater than 100 hours.
The principle of luminosity of OLED is based under the effect of extra electric field, and electronics is injected into organic lowest unocccupied molecular orbital (LUMO) from negative electrode, and the hole is injected into organic highest occupied molecular orbital (HOMO) from anode.Electronics and hole meet at luminescent layer, compound, form exciton, exciton move under electric field action, gives luminescent material with NE BY ENERGY TRANSFER, and excitation electron is from the ground state transition to excitation state, excited energy is through the radiation inactivation, generation photon, release luminous energy.
Luminescent material is the most important factor that influences luminous efficiency; Luminescent material can be divided into fluorescent material and phosphor material, and fluorescent material is obstructed owing to the triplet state transition, therefore; The radiation inactivation that can only pass through singlet is and luminous, and the ratio of triplet excitons and singlet exciton is about 3: 1; And because fluorescent material has only 25% exciton effectively to utilize, remaining 75% all pass through non-attenuation, and energy is with the form release of heat; Device temperature is raise, thereby reduce the life-span of device, phosphor material is then because the stronger spin coupling of metallic atom self; Therefore, make original impossible triplet state transition become possibility, therefore; Luminous efficiency improves greatly, and the luminous efficiency of green glow phosphor material and ruddiness phosphor material is all relatively good at present, and stability of material is higher; And the life-span of blue light phosphor material and stability are all not so good, have restricted the luminous of blue light.
Summary of the invention
Based on the problems referred to above, the object of the present invention is to provide a kind of white-light electroluminescence device.
Technical scheme of the present invention is following:
A kind of white-light electroluminescence device, its structure is followed successively by: substrate/conductive layer/hole injection layer/hole transmission layer/electronic barrier layer/luminescent layer/hole blocking layer/electron transfer layer/electron injecting layer/cathode layer; Wherein, said luminescent layer is a lamination layer structure, and this lamination layer structure is followed successively by: ruddiness phosphorescence luminescent layer/first wall/blue light-emitting/second wall/green glow phosphorescence luminescent layer; Said ruddiness phosphorescence luminescent layer be prepared in said electronic barrier layer surface, said hole blocking layer is prepared in said green glow phosphorescence luminescent layer surface.
In above-mentioned white-light electroluminescence device:
Substrate and conductive layer can adopt ITO (tin indium oxide) glass, and wherein, glass is substrate, and ITO is a conductive layer; The material of cathode layer can be silver (Ag), aluminium (Al), magnesium: silver-colored magnesium (Mg: Ag) any in alloy or the gold (Au);
The material of ruddiness phosphorescence luminescent layer be red light material (as, two (2-methyl-diphenyl quinoxaline) (acetylacetone,2,4-pentanediones) close iridium (Ir (MDQ)
2(acac)), two (1-phenyl isoquinolin quinoline) (acetylacetone,2,4-pentanediones) close iridium (Ir (piq)
2(acac)) or three (1-phenyl-isoquinolin) close iridium (Ir (piq)
3)) be doped to arbitrary mixture of being formed in the beryllium complex;
The material of first wall and second wall is a hole mobile material, is respectively 2-butyl-9,10-two-(2-naphthyl) anthracene (TBADN), N, N '-two (3-aminomethyl phenyl)-N; N '-diphenyl-4,4 '-benzidine (TPD), 4,4 ', 4 " three (carbazole-9-yl) triphenylamine (TCTA), 4; 4 '-two (9-carbazole) biphenyl (CBP), N, N '-(1-naphthyl)-N, N '-diphenyl-4; 4 '-benzidine (NPB), 1,3, at least a in 5-triphenylbenzene (TDAPB) or the CuPc (CuPc);
The material of blue light-emitting is that blue light material class 0 equipment such as ， perylene (Perylene), perylene derivative, triphenylamine diphenyl ethylene derivatives, triphenylamine connect naphthyl ethene derivatives or styrene derivative) with hole mobile material (like, 2-butyl-9; 10-two-(2-naphthyl) anthracene (TBADN), N, N '-two (3-aminomethyl phenyl)-N, N '-diphenyl-4; 4 '-benzidine (TPD), 4,4 ', 4 " and three (carbazole-9-yl) triphenylamine (TCTA), 4; 4 '-two (9-carbazole) biphenyl (CBP), N; N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine (NPB), 1; 3,5-triphenylbenzene (TDAPB) or CuPc (CuPc)) in the mixture that mix to form any;
The material of green glow phosphorescence luminescent layer be blue light material (as, three (2-phenylpyridines) close iridium (Ir (ppy)
3) or acetopyruvic acid two (2-phenylpyridine) iridium (Ir (ppy)
2(acac))) be doped to arbitrary mixture of being formed in the beryllium complex respectively;
Wherein, the beryllium complex material is fen yl pyridines beryllium (Bepp
2), 10-hydroxy benzo quinoline beryllium (BeBq
2), oxine beryllium (BeqQ
2), 2-methyl-oxine beryllium (BeMQ
2), oxine beryllium (BeQ
2) or 7-propyl group-8 oxyquinoline beryllium (BePrQ
2) in any.
White-light electroluminescence device of the present invention, the luminescent layer with blue light emitting material and ruddiness, green glow phosphor material has following advantage:
1, between ruddiness phosphorescence luminescent layer, blue light-emitting, green glow phosphorescence luminescent layer, inserts first and second walls respectively and stop that singlet is diffused in the phosphorescent layer in the fluorescence coating, guarantee the emission of fluorescent material; Simultaneously, it is luminous to make the triplet excitons of luminescent material can be spread in the phosphorescent layer radiation transistion again, has improved luminous efficiency;
2, first and second wall in blue light-emitting, makes blue light-emitting catch fully it hole confinement, the light-emitting zone of restriction exciton, and with spectrum narrowing, stabilized illumination is photochromic;
3, ruddiness, green glow phosphorescence luminescent layer place the both sides of blue light-emitting respectively, and the blue light triplet energy state is caught fully, further improve luminous efficiency.
Description of drawings
Fig. 1 is the structural representation of white-light electroluminescence device of the present invention;
Fig. 2 is the white-light electroluminescence device energy diagram of embodiment 1;
Fig. 3 is the white-light electroluminescence device of embodiment 1 and the luminance voltage figure of reference white-light electroluminescence device.
Embodiment
A kind of white-light electroluminescence device provided by the invention; As shown in Figure 1, its structure is followed successively by: substrate 11/ conductive layer 12/ hole injection layer 13/ hole transmission layer 14/ electronic barrier layer 15/ luminescent layer 16/ hole blocking layer 17/ electron transfer layer 18/ electron injecting layer 19/ cathode layer 20; Wherein, said luminescent layer is a lamination layer structure, and this lamination layer structure is followed successively by: ruddiness phosphorescence luminescent layer 161/ first wall 162/ blue light-emitting 163/ second wall 164/ green glow phosphorescence luminescent layer 165; Ruddiness phosphorescence luminescent layer 161 be prepared in electronic barrier layer 15 surfaces, hole blocking layer 17 is prepared in green glow phosphorescence luminescent layer 165 surfaces; Just the white-light electroluminescence device overall structure is: substrate 11/ conductive layer 12/ hole injection layer 13/ hole transmission layer 14/ electronic barrier layer 15/ ruddiness phosphorescence luminescent layer 161/ first wall 162/ blue light-emitting 163/ second wall 164/ green glow phosphorescence luminescent layer 165/ hole blocking layer 17/ electron transfer layer 18/ electron injecting layer 19/ cathode layer 20.
In above-mentioned white-light electroluminescence device, each organic function layer all adopts evaporation coating technique to prepare:
Substrate and conductive layer can adopt ITO (tin indium oxide) glass, and wherein, glass is substrate 11, and ITO is a conductive layer 12;
The material of cathode layer 20 can be silver (Ag), aluminium (Al), magnesium: silver-colored magnesium (Mg: Ag) any in alloy or the gold (Au), preferred Al; The thickness of this cathode layer is 20-200nm, and preferred thickness is 150nm;
The material of ruddiness phosphorescence luminescent layer be red light material (as, two (2-methyl-diphenyl quinoxaline) (acetylacetone,2,4-pentanediones) close iridium (Ir (MDQ)
2(acac)), two (1-phenyl isoquinolin quinoline) (acetylacetone,2,4-pentanediones) close iridium (Ir (piq)
2(acac)) or three (1-phenyl-isoquinolin) close iridium (Ir (piq)
3)) be doped to arbitrary mixture of being formed in the beryllium complex respectively; Wherein, in the ruddiness phosphorescence luminescent layer, the doping ratio of red light material is 0.5%-5%, and this ruddiness phosphorescence light emitting layer thickness is 5-15nm;
The material of first wall and second wall is respectively 2-butyl-9,10-two-(2-naphthyl) anthracene (TBADN), N, N '-two (3-aminomethyl phenyl)-N, N '-diphenyl-4; 4 '-benzidine (TPD), 4,4 ', 4 " and three (carbazole-9-yl) triphenylamine (TCTA), 4; 4 '-two (9-carbazole) biphenyl (CBP), N, N '-(1-naphthyl)-N, N '-diphenyl-4; 4 '-benzidine (NPB), 1,3, at least a in 5-triphenylbenzene (TDAPB) or the CuPc (CuPc); Wherein, the thickness of first and second wall is respectively 1-10nm;
The material of blue light-emitting be blue light material (like, Perylene! perylene), perylene derivative (TBPe), triphenylamine diphenyl ethylene derivatives (DPAVBi or DPAVB), triphenylamine connect naphthyl ethene derivatives (BDAVBi) or styrene derivative (BCzVB or BCzVBi)) with hole mobile material (like, 2-butyl-9; 10-two-(2-naphthyl) anthracene (TBADN), N, N '-two (3-aminomethyl phenyl)-N, N '-diphenyl-4; 4 '-benzidine (TPD), 4,4 ', 4 " and three (carbazole-9-yl) triphenylamine (TCTA), 4; 4 '-two (9-carbazole) biphenyl (CBP), N; N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine (NPB), 1; 3,5-triphenylbenzene (TDAPB) or CuPc (CuPc)) in the mixture that mix to form any; Wherein, the doping ratio of blue light material is 5%-20%, and the blue light emitting layer thickness is 5-15nm;
The material of green glow phosphorescence luminescent layer be green light material (as, three (2-phenylpyridines) close iridium (Ir (ppy)
3) or acetopyruvic acid two (2-phenylpyridine) iridium (Ir (ppy)
2(acac))) be doped to arbitrary mixture of being formed in the beryllium complex respectively; Wherein, the doping ratio of green light material is 5%-10%, and this green glow phosphorescence light emitting layer thickness is 5-15nm;
The material of hole injection layer is molybdenum trioxide (MoO
3), tungstic acid (WO
3), VO
xOr vanadic oxide (V
2O
5) in any, be preferably MoO
3Wherein, hole injection layer thickness is 5-40nm, and preferred thickness is 5nm;
The material of hole transmission layer and electronic barrier layer is respectively N, N '-two (3-aminomethyl phenyl)-N, N '-diphenyl-4; 4 '-benzidine (TPD), 4,4 ', 4 " three (carbazole-9-yl) triphenylamine (TCTA), N; N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine (NPB), 1; 3, any among 5-triphenylbenzene (TDAPB) or the CuPc CuPc, the thickness of hole transmission layer and electronic barrier layer is respectively 5-80nm; Wherein, the preferred NPB of hole transmission layer, preferred thickness is 40nm, and electronic barrier layer is preferably TCTA, and preferred thickness is 5nm;
The material of electron transfer layer and hole blocking layer is respectively 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole (PBD), oxine aluminium (Alq
3), 2,5-two (1-naphthyl)-1,3,4-diazole (BND), 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (like TAZ), N-aryl benzimidazole (TPBI) or quinoxaline derivant (TPQ).Wherein, the hole barrier layer thickness is 3-10nm, and preferred thickness is 5nm, and the material of hole blocking layer is preferably TPBi; The electric transmission layer thickness is 40-80nm, and preferred thickness is 60nm, and the material of electron transfer layer is preferably Bphen;
The material of electron injecting layer is Cs
2CO
3, CsN
3, LiF, CsF, CaF
2, MgF
2Perhaps any among the NaF, the thickness 0.5-5nm of electron injecting layer; For the material of this implanted layer, also can adopt Cs
2CO
3, CsN
3, LiF, CsF, CaF
2, MgF
2Perhaps NaF and electron transport material (as, 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole (PBD), oxine aluminium (Alq
3), 2,5-two (1-naphthyl)-1,3; 4-diazole (BND), 4,7-diphenyl-1,10-phenanthroline (Bphen), 1; 2; In 4-triazole derivative (like TAZ), N-aryl benzimidazole (TPBI) or the quinoxaline derivant (TPQ) any) any in the mixture of doping composition, doping ratio is 20-60%, the electron injecting layer thickness of this moment is 20-60nm; With regard to the dopant mixture material, preferred Bphen:CsN
3, preferred doping ratio is 20%, this moment, electron injecting layer thickness was preferably 40nm;
Wherein, above-mentioned beryllium complex material is fen yl pyridines beryllium (Bepp
2), 10-hydroxy benzo quinoline beryllium (BeBq
2), oxine beryllium (BeqQ
2), 2-methyl-oxine beryllium (BeMQ
2), oxine beryllium (BeQ
2) or 7-propyl group-8 oxyquinoline beryllium (BePrQ
2) in any.
White-light electroluminescence device of the present invention; With relatively stable; The luminescent layer of better performances blue light emitting material and ruddiness, the preparation of green glow phosphor material; Because the diffusion length of triplet excitons is 100nm, the diffusion length of singlet is 5nm, shifts in order to make the fluorescent material singlet exciton in fluorescence coating, carry out the Forster energy fully; And between ruddiness phosphorescence luminescent layer, blue light-emitting, green glow phosphorescence luminescent layer, insert first and second walls respectively and stop that singlet is diffused in the phosphorescent layer in the fluorescence coating, guarantee the emission of fluorescent material; Simultaneously, it is luminous to make the triplet excitons of luminescent material can be spread in the phosphorescent layer radiation transistion again, has improved luminous efficiency; Simultaneously, it is luminous to make the triplet excitons of blue light-emitting can be spread in ruddiness, the green glow phosphorescence luminescent layer radiation transistion again, makes 75% triplet excitons in the blue light-emitting fully obtain utilizing; And the one or two wall is a quantum well structure, can blue light-emitting caught fully with hole confinement inside to it; The light-emitting zone of restriction exciton, with spectrum narrowing, stabilized illumination is photochromic; Improved luminous efficiency; And ruddiness, green glow phosphorescence luminescent layer place the both sides of fluorescence coating respectively, and the blue light triplet energy state is caught fully, further improve luminous efficiency.
Below in conjunction with accompanying drawing, further explain is done in preferred embodiment of the present invention.
Embodiment 1
A kind of white-light electroluminescence device, its structure is followed successively by: glass/ITO/MoO
3/ NPB/TCTA/Bepp
2: Ir (MDQ)
2(acac)/TCTA/TBADN:BCzVBi/TCTA/Bepp
2: Ir (ppy)
3/ TPBi/Bphen/Bphen:CsN
3/ Al.
About the white-light electroluminescence device among this embodiment, by its structure, and adopt evaporation coating technique, successively each organic function layer is carried out the vapor deposition preparation; Wherein, in the composite construction of luminescent layer: the red light material of ruddiness phosphorescence luminescent layer is Ir (MDQ)
2(acac), doped body is Bepp
2, the red light material doping ratio is 0.5%, thickness is 7nm; The material of first wall is TCTA, and thickness is 2nm; The blue light material of blue light fluorescence coating is BCzVBi, and main body is TBADN, and the blue light material doping ratio is 10%, and thickness is 10nm; The material of second layer wall is TCTA, and thickness is 2nm; The green light material of green glow phosphorescence luminescent layer is Ir (ppy)
3, doped body is Bepp
2, the green light material doping ratio is 7%, thickness is 10nm.Other organic function layer structures of white-light electroluminescence device, as, hole injection layer (MoO
3) thickness be 5nm, the thickness of hole transmission layer (NPB) is 5nm; The thickness of electronic barrier layer (TCTA) is 5nm; The thickness of hole blocking layer (TPBi) is 5nm; The thickness of electron transfer layer (Bphen) is 60nm; Electron injecting layer (Bphen:CsN
3) thickness be 40nm; Cathode layer adopts the Al layer, and its thickness is 150nm.
Fig. 1 is this embodiment white-light electroluminescence device energy diagram; Wherein, this device architecture is:
Glass/ITO/MoO
3/ NPB/TCTA/Bepp
2: Ir (MDQ)
2(acac)/TCTA/TBADN:BCzVBi/TCTA/Bepp
2: Ir (ppy)
3/ TPBi/Bphen/Bphen:CsN
3/ Al.
Fig. 2 is the white-light electroluminescence device of this embodiment and the luminance voltage figure of reference white-light electroluminescence device; Wherein,
The white-light electroluminescence device structure of this embodiment: glass/ITO/MoO
3/ NPB/TCTA/Bepp
2: Ir (MDQ)
2(acac)/TCTA/TBADN:BCzVBi/TCTA/Bepp
2: Ir (ppy)
3/ TPBi/Bphen/Bphen:CsN
3/ A;
Reference white-light electroluminescence device structure: ITO substrate/MoO
3/ NPB/TCTA/Bepp
2: Ir (MDQ)
2(acac)/TBADN:BCzVBi/Bepp
2: Ir (ppy)
3/ TPBi/Bphen/Bphen:CsN
3/ Al.
By finding out among Fig. 2, when 10V, the quantum well devices brightness of embodiment 1 is 4449cd/cm
2, be 2537cd/cm and there is not the normal component brightness of SQW
2, this explanation, after adding wall, the recombination probability in electronics and hole is improved, and simultaneously, the triplet state of fluorescence obtains diffusion, arrives the both sides phosphorescent layer and is caught by phosphor material afterwards, and therefore, luminous efficiency gets a promotion, and the brightness of device has obtained increase.
Embodiment 2
A kind of white-light electroluminescence device, its structure is followed successively by: glass/ITO/WO
3/ TPD/TCTA/BeBq
2: Ir (piq)
2(acac)/TPD/TPD:BCzVB/TPD/BeBq
2: Ir (ppy) 2 (acac)/TAZ/TPBI/Cs
2CO
3/ Al.
About the white-light electroluminescence device among this embodiment, by its structure, and adopt evaporation coating technique, successively each organic function layer is carried out the vapor deposition preparation; Wherein, in the composite construction of luminescent layer: the red light material of ruddiness phosphorescence luminescent layer is Ir (piq)
2(acac), doped body is BeBq
2, the red light material doping ratio is 5%, thickness is 5nm; The material of first wall is TPD, and thickness is 10nm; The blue light material of blue light fluorescence coating is BCzVB, and main body is TPD, and the blue light material doping ratio is 20%, and thickness is 20nm; The material of second layer wall is TPD, and thickness is 10nm; The green light material of green glow phosphorescence luminescent layer is Ir (ppy)
2(acac), doped body is BeBq
2, the green light material doping ratio is 5%, thickness is 15nm.Other organic function layer structures of white-light electroluminescence device, as, hole injection layer (WO
3) thickness be 40nm, the thickness of hole transmission layer (TPD) is 20nm; The thickness of electronic barrier layer (TCTA) is 5nm; The thickness of hole blocking layer (TAZ) is 10nm; The thickness of electron transfer layer (TPBI) is 80nm; Electron injecting layer (Cs
2CO
3) thickness be 20nm; Cathode layer adopts the Al layer, and its thickness is 20nm.
A kind of white-light electroluminescence device, its structure is followed successively by: glass/ITO/VO
x/ TDAPB/NPB/BeqQ
2: Ir (piq)
3/ NPB/TCTA:TBPe/TDAPB/BeMQ
2: Ir (ppy)
3/ BND/TPQ/LiF/Al.
About the white-light electroluminescence device among this embodiment, by its structure, and adopt evaporation coating technique, successively each organic function layer is carried out the vapor deposition preparation; Wherein, in the composite construction of luminescent layer: the red light material of ruddiness phosphorescence luminescent layer is Ir (piq)
2(acac), doped body is BeqQ
2, the red light material doping ratio is 4%, thickness 15nm; The material of first wall is NPB, and thickness is 1nm; The blue light material of blue light fluorescence coating is TBPe, and main body is TCTA, and the blue light material doping ratio is 15%, and thickness is 15nm; The material of second layer wall is TDAPB, and thickness is 1nm; The green light material of green glow phosphorescence luminescent layer is Ir (ppy)
3, doped body is BeMQ
2, the green light material doping ratio is 6%, thickness is 7nm.Other organic function layer structures of white-light electroluminescence device, as, hole injection layer (VO
x) thickness be 10nm, the thickness of hole transmission layer (TDAPB) is 80nm; The thickness of electronic barrier layer (NPB) is 80nm; The thickness of hole blocking layer (BND) is 3nm; The thickness of electron transfer layer (TPQ) is 40nm; The thickness of electron injecting layer (LiF) is 60nm; Cathode layer adopts the Al layer, and its thickness is 200nm.
A kind of white-light electroluminescence device, its structure is followed successively by: glass/ITO/V
2O
5/ CuPc/TPD/BeqQ
2: Ir (piq)
3/ NPB/CBP:DPAVB/CuPc/BeQ
2: Ir (ppy)
2(acac)/TPQ/TPBI/CsF/Al.
About the white-light electroluminescence device among this embodiment, by its structure, and adopt evaporation coating technique, successively each organic function layer is carried out the vapor deposition preparation; Wherein, in the composite construction of luminescent layer: the red light material of ruddiness phosphorescence luminescent layer is Ir (piq)
2(acac), doped body is BePrQ
2, the red light material doping ratio is 3%, thickness is 12nm; The material of first wall is NPB, and thickness is 8nm; The blue light material of blue light fluorescence coating is DPAVB, and main body is CBP, and the blue light material doping ratio is 20%, and thickness is 5nm; The material of second layer wall is CuPc, and thickness is 6nm; The green light material of green glow phosphorescence luminescent layer is Ir (ppy)
3, doped body is BeQ
2, the green light material doping ratio is 4%, thickness is 10nm.Other organic function layer structures of white-light electroluminescence device, as, hole injection layer (V
2O
5) thickness be 30nm, the thickness of hole transmission layer (CuPc) is 10nm; The thickness of electronic barrier layer (TPD) is 60nm; The thickness of hole blocking layer (TPQ) is 8nm; The thickness of electron transfer layer (TPBI) is 50nm; The thickness of electron injecting layer (CsF) is 50nm; Cathode layer adopts the Al layer, and its thickness is 100nm.
Embodiment 5
A kind of white-light electroluminescence device, its structure is followed successively by: glass/ITO/V
2O
5/ CuPc/TPD/BeqQ
2: Ir (piq)
3/ NPB/NPB: perylene/CuPc/BeQ
2: Ir (ppy)
2(acac)/TPQ/TPBI/CaF
2/ Ag.
About the white-light electroluminescence device among this embodiment, by its structure, and adopt evaporation coating technique, successively each organic function layer is carried out the vapor deposition preparation; Wherein, in the composite construction of luminescent layer: the red light material of ruddiness phosphorescence luminescent layer is Ir (piq)
2(acac), doped body is BePrQ
2, the red light material doping ratio is 4.5%, thickness is 13nm; The material of first wall is NPB, and thickness is 6nm; The blue light material of blue light fluorescence coating is a perylene, and main body is NPB, and the blue light material doping ratio is 8%, and thickness is 12nm; The material of second layer wall is CuPc, and thickness is 3nm; The green light material of green glow phosphorescence luminescent layer is Ir (ppy)
3, doped body is BeQ
2, the green light material doping ratio is 7%, thickness is 9nm.Other organic function layer structures of white-light electroluminescence device, as, hole injection layer (V
2O
5) thickness be 15nm, the thickness of hole transmission layer (CuPc) is 50nm; The thickness of electronic barrier layer (TPD) is 20nm; The thickness of hole blocking layer (TPQ) is 6nm; The thickness of electron transfer layer (TPBI) is 70nm; Electron injecting layer (CaF
2) thickness be 30nm; Cathode layer adopts the Ag layer, and its thickness is 60nm.
A kind of white-light electroluminescence device, its structure is followed successively by: glass/ITO/V
2O
5/ CuPc/TPD/BeqQ
2: Ir (piq)
3/ NPB/CuPc:DPAVB/CuPc/BeQ
2: Ir (ppy)
2(acac)/TPQ/TPBI/CsN
3/ Mg.
About the white-light electroluminescence device among this embodiment, by its structure, and adopt evaporation coating technique, successively each organic function layer is carried out the vapor deposition preparation; Wherein, in the composite construction of luminescent layer: the red light material of ruddiness phosphorescence luminescent layer is Ir (piq)
2(acac), doped body is BePrQ
2, the red light material doping ratio is 0.5%, thickness is 3nm; The material of first wall is NPB, and thickness is 2nm; The blue light material of blue light fluorescence coating is DPAVB, and main body is CuPc, and the blue light material doping ratio is 5%, and thickness is 10nm; The material of second layer wall is CuPc, and thickness is 2nm; The green light material of green glow phosphorescence luminescent layer is Ir (ppy)
3, doped body is BeQ
2, the green light material doping ratio is 10%, thickness is 10nm.Other organic function layer structures of white-light electroluminescence device, as, hole injection layer (V
2O
5) thickness be 25nm, the thickness of hole transmission layer (CuPc) is 55nm; The thickness of electronic barrier layer (TPD) is 35nm; The thickness of hole blocking layer (TPQ) is 8nm; The thickness of electron transfer layer (TPBI) is 55nm; Electron injecting layer (CsN
3) thickness be 25nm; Cathode layer adopts the Mg layer, and its thickness is 80nm.
Embodiment 7
A kind of white-light electroluminescence device, its structure is followed successively by: glass/ITO/MoO
3/ NPB/TPD/BeBq
2: Ir (MDQ)
2(acac)/TCTA/TBADN:BCzVBi/CBP/BeBq
2: Ir (ppy)
3/ TPBi/Bphen/MgF
2/ Mg-Ag alloy.
About the white-light electroluminescence device among this embodiment, by its structure, and adopt evaporation coating technique, successively each organic function layer is carried out the vapor deposition preparation; Wherein, in the composite construction of luminescent layer: the red light material of ruddiness phosphorescence luminescent layer is Ir (MDQ)
2(acac), doped body is BeBq
2, the red light material doping ratio is 0.5%, thickness is 7nm; The material of first wall is TPD, and thickness is 2nm; The blue light material of blue light fluorescence coating is BCzVBi, and main body is TBADN, and the blue light material doping ratio is 10%, and thickness is 10nm; The material of second layer wall is CBP, and thickness is 2nm; The green light material of green glow phosphorescence luminescent layer is Ir (ppy)
3, doped body is BeBq
2, the green light material doping ratio is 7%, thickness is 10nm.Other organic function layer structures of white-light electroluminescence device, as, hole injection layer (MoO
3) thickness be 5nm, the thickness of hole transmission layer (NPB) is 5nm; The thickness of electronic barrier layer (TCTA) is 5nm; The thickness of hole blocking layer (TPBi) is 5nm; The thickness of electron transfer layer (Bphen) is 60nm; Electron injecting layer (MgF
2) thickness be 40nm; Cathode layer adopts the Mg-Ag alloy-layer, and its thickness is 160nm.
A kind of white-light electroluminescence device, its structure is followed successively by:
Glass/ITO/MoO
3/ NPB/TCTA/Bepp
2: Ir (MDQ)
2(acac)/TCTA/TBADN: perylene/TCTA/Bepp
2: Ir (ppy)
3/ TPBi/Bphen/NaF/Au.
About the white-light electroluminescence device among this embodiment, by its structure, and adopt evaporation coating technique, successively each organic function layer is carried out the vapor deposition preparation; Wherein, in the composite construction of luminescent layer: the red light material of ruddiness phosphorescence luminescent layer is Ir (MDQ)
2(acac), doped body is Bepp
2, the red light material doping ratio is 0.5%, thickness is 7nm; The material of first wall is TCTA, and thickness is 5nm; The blue light material of blue light fluorescence coating is Perylene! perylene), main body is TBADN, and the blue light material doping ratio is 5%, and thickness is 10nm; The material of second layer wall is TCTA, and thickness is 5nm; The green light material of green glow phosphorescence luminescent layer is Ir (ppy)
3, doped body is Bepp
2, the green light material doping ratio is 7%, thickness is 10nm.Other organic function layer structures of white-light electroluminescence device, as, hole injection layer (MoO
3) thickness be 5nm, the thickness of hole transmission layer (NPB) is 5nm; The thickness of electronic barrier layer (TCTA) is 5nm; The thickness of hole blocking layer (TPBi) is 5nm; The thickness of electron transfer layer (Bphen) is 60nm; The thickness of electron injecting layer (NaF) is 40nm; Cathode layer adopts the Au layer, and its thickness is 180nm.
Embodiment 9
A kind of white-light electroluminescence device, its structure is followed successively by:
Glass/ITO/MoO
3/ NPB/TCTA/Bepp
2: Ir (piq)
2(acac)/TCTA/TBADN:BCzVBi/TCTA/Bepp
2: Ir (ppy)
3/ TPBi/Bphen/Bphen:CsN
3/ Al.
About the white-light electroluminescence device among this embodiment, by its structure, and adopt evaporation coating technique, successively each organic function layer is carried out the vapor deposition preparation; Wherein, in the composite construction of luminescent layer: the red light material of ruddiness phosphorescence luminescent layer is Ir (piq)
2(acac), doped body is Bepp
2, the red light material doping ratio is 0.5%, thickness is 7nm; The material of first wall is TCTA, and thickness is 15nm; The blue light material of blue light fluorescence coating is BCzVBi, and main body is TBADN, and the blue light material doping ratio is 10%, and thickness is 10nm; The material of second layer wall is TCTA, and thickness is 15nm; The green light material of green glow phosphorescence luminescent layer is Ir (ppy)
2(acac) doped body is Bepp
2The green light material doping ratio is 7%, and thickness is 10nm.Other organic function layer structures of white-light electroluminescence device, as, hole injection layer (MoO
3) thickness be 5nm, the thickness of hole transmission layer (NPB) is 5nm; The thickness of electronic barrier layer (TCTA) is 5nm; The thickness of hole blocking layer (TPBi) is 5nm; The thickness of electron transfer layer (Bphen) is 60nm; Electron injecting layer (Bphen:CsN
3) thickness be 40nm; Cathode layer adopts the Al layer, and its thickness is 90nm.
A kind of white-light electroluminescence device, its structure is followed successively by:
Glass/ITO/MoO
3/ NPB/NPB/Bepp
2: Ir (MDQ)
2(acac)/TCTA/TBADN:DPAVBi/CBP/Bepp
2: Ir (ppy)
3/ TPBi/Bphen/Bphen:CsN
3/ Al.
About the white-light electroluminescence device among this embodiment, by its structure, and adopt evaporation coating technique, successively each organic function layer is carried out the vapor deposition preparation; Wherein, in the composite construction of luminescent layer: the red light material of ruddiness phosphorescence luminescent layer is Ir (MDQ)
2(acac), doped body is Bepp
2, the red light material doping ratio is 0.5%, thickness is 7nm; The material of first wall is NPB, and thickness is 2nm; The blue light material of blue light fluorescence coating is DPAVBi, and main body is TBADN, and the blue light material doping ratio is 10%, and thickness is 10nm; The material of second layer wall is CBP, and thickness is 2nm; The green light material of green glow phosphorescence luminescent layer is Ir (ppy)
3, doped body is Bepp
2, the green light material doping ratio is 7%, thickness is 10nm.Other organic function layer structures of white-light electroluminescence device, as, hole injection layer (MoO
3) thickness be 5nm, the thickness of hole transmission layer (NPB) is 5nm; The thickness of electronic barrier layer (TCTA) is 5nm; The thickness of hole blocking layer (TPBi) is 5nm; The thickness of electron transfer layer (Bphen) is 60nm; Electron injecting layer (Bphen:CsN
3) thickness be 40nm; Cathode layer adopts the Al layer, and its thickness is 130nm.
A kind of white-light electroluminescence device, its structure is followed successively by:
Glass/ITO/MoO
3/ NPB/TCTA/Bepp
2: Ir (MDQ)
2(acac)/CBP/CBP:DPAVB/TPD/Bepp
2: Ir (ppy)
3/ TPBi/Bphen/Bphen:CsN
3/ Al.
About the white-light electroluminescence device among this embodiment, by its structure, and adopt evaporation coating technique, successively each organic function layer is carried out the vapor deposition preparation; Wherein, in the composite construction of luminescent layer: the red light material of ruddiness phosphorescence luminescent layer is Ir (MDQ)
2(acac), doped body is Bepp
2, the red light material doping ratio is 0.5%, thickness is 7nm; The material of first wall is CBP, and thickness is 2nm; The blue light material of blue light fluorescence coating is DPAVB, and main body is CBP, and the blue light material doping ratio is 10%, and thickness is 10nm; The material of second layer wall is TPD, and thickness is 2nm; The green light material of green glow phosphorescence luminescent layer is Ir (ppy)
3, doped body is Bepp
2, the green light material doping ratio is 7%, thickness is 10nm.Other organic function layer structures of white-light electroluminescence device, as, hole injection layer (MoO
3) thickness be 5nm, the thickness of hole transmission layer (NPB) is 5nm; The thickness of electronic barrier layer (TCTA) is 5nm; The thickness of hole blocking layer (TPBi) is 5nm; The thickness of electron transfer layer (Bphen) is 60nm; Electron injecting layer (Bphen:CsN
3) thickness be 40nm; Cathode layer adopts the Al layer, and its thickness is 70nm.
A kind of white-light electroluminescence device, its structure is followed successively by:
Glass/ITO/MoO
3/ NPB/TCTA/Bepp
2: Ir (MDQ)
2(acac)/CBP/TBADN:CBP/TCTA/Bepp
2: Ir (ppy)
3/ TPBi/Bphen/Bphen:CsN
3/ Al.
About the white-light electroluminescence device among this embodiment, by its structure, and adopt evaporation coating technique, successively each organic function layer is carried out the vapor deposition preparation; Wherein, in the composite construction of luminescent layer: the red light material of ruddiness phosphorescence luminescent layer is Ir (MDQ)
2(acac), doped body is Bepp
2, the red light material doping ratio is 0.5%, thickness is 7nm; The material of first wall is CBP, and thickness is 2nm; The blue light material of blue light fluorescence coating is CBP, and main body is TBADN, and the blue light material doping ratio is 10%, and thickness is 10nm; The material of second layer wall is TCTA, and thickness is 2nm; The green light material of green glow phosphorescence luminescent layer is Ir (ppy)
3, doped body is Bepp
2, the green light material doping ratio is 7%, thickness is 10nm.Other organic function layer structures of white-light electroluminescence device, as, hole injection layer (MoO
3) thickness be 5nm, the thickness of hole transmission layer (NPB) is 5nm; The thickness of electronic barrier layer (TCTA) is 5nm; The thickness of hole blocking layer (TPBi) is 5nm; The thickness of electron transfer layer (Bphen) is 60nm; Electron injecting layer (Bphen:CsN
3) thickness be 40nm; Cathode layer adopts the Al layer, and its thickness is 40nm.
A kind of white-light electroluminescence device, its structure is followed successively by: glass/ITO/MoO
3/ NPB/TCTA/Bepp
2: Ir (MDQ)
2(acac)/TCTA/TBADN:BCzVBi/TCTA/Bepp
2: Ir (ppy)
3/ TPBi/Bphen/Bphen:CsN
3/ Al.
About the white-light electroluminescence device among this embodiment, by its structure, and adopt evaporation coating technique, successively each organic function layer is carried out the vapor deposition preparation; Wherein, in the composite construction of luminescent layer: the red light material of ruddiness phosphorescence luminescent layer is Ir (MDQ)
2(acac), doped body is Bepp
2, the red light material doping ratio is 0.5%, thickness is 7nm; The material of first wall is TCTA, and thickness is 2nm; The blue light material of blue light fluorescence coating is BCzVBi, and main body is that TBADN blue light material doping ratio is 5%, and thickness is 10nm; The material of second layer wall is TCTA, and thickness is 2nm; The green light material of green glow phosphorescence luminescent layer is Ir (ppy)
3, doped body is Bepp
2, the green light material doping ratio is 7%, thickness is 10nm.Other organic function layer structures of white-light electroluminescence device, as, hole injection layer (MoO
3) thickness be 5nm, the thickness of hole transmission layer (NPB) is 5nm; The thickness of electronic barrier layer (TCTA) is 5nm; The thickness of hole blocking layer (TPBi) is 5nm; The thickness of electron transfer layer (Bphen) is 60nm; Electron injecting layer (Bphen:CsN
3) thickness be 40nm; Cathode layer adopts the Al layer, and its thickness is 150nm.
A kind of white-light electroluminescence device, its structure is followed successively by: glass/ITO/MoO
3/ NPB/TCTA/Bepp
2: Ir (MDQ)
2(acac)/TCTA/TBADN:BCzVBi/TCTA/Bepp
2: Ir (ppy)
3/ TPBi/Bphen/Bphen:CsN
3/ Al.
About the white-light electroluminescence device among this embodiment, by its structure, and adopt evaporation coating technique, successively each organic function layer is carried out the vapor deposition preparation; Wherein, in the composite construction of luminescent layer: the red light material of ruddiness phosphorescence luminescent layer is Ir (MDQ)
2(acac), doped body is Bepp
2, the red light material doping ratio is 5%, thickness is 7nm; The material of first wall is TCTA, and thickness is 2nm; The blue light material of blue light fluorescence coating is BCzVBi, and main body is TBADN, and the blue light material doping ratio is 20%, and thickness is 10nm; The material of second layer wall is TCTA, and thickness is 2nm; The green light material of green glow phosphorescence luminescent layer is Ir (ppy)
3, doped body is Bepp
2, the green light material doping ratio is 10%, thickness is 10nm.Other organic function layer structures of white-light electroluminescence device, as, hole injection layer (MoO
3) thickness be 5nm, the thickness of hole transmission layer (NPB) is 5nm; The thickness of electronic barrier layer (TCTA) is 5nm; The thickness of hole blocking layer (TPBi) is 5nm; The thickness of electron transfer layer (Bphen) is 60nm; Electron injecting layer (Bphen:CsN
3) thickness be 40nm; Cathode layer adopts the Al layer, and its thickness is 150nm.
A kind of white-light electroluminescence device, its structure is followed successively by: glass/ITO/MoO
3/ NPB/TCTA/Bepp
2: Ir (MDQ)
2(acac)/TCTA/CBP:BCzVBi/TCTA/Bepp
2: Ir (ppy)
3/ TPBi/Bphen/Bphen:CsN
3/ Al.
About the white-light electroluminescence device among this embodiment, by its structure, and adopt evaporation coating technique, successively each organic function layer is carried out the vapor deposition preparation; Wherein, in the composite construction of luminescent layer: the red light material of ruddiness phosphorescence luminescent layer is Ir (MDQ)
2(acac), doped body is Bepp
2, the red light material doping ratio is 3%, thickness is 7nm; The material of first wall is TCTA, and thickness is 2nm; The blue light material of blue light fluorescence coating is BCzVBi, and main body is CBP, and the blue light material doping ratio is 5%, and thickness is 10nm; The material of second layer wall is TCTA, and thickness is 2nm; The green light material of green glow phosphorescence luminescent layer is Ir (ppy)
3, doped body is Bepp
2, the green light material doping ratio is 8%, thickness is 10nm.Other organic function layer structures of white-light electroluminescence device, as, hole injection layer (MoO
3) thickness be 5nm, the thickness of hole transmission layer (NPB) is 5nm; The thickness of electronic barrier layer (TCTA) is 5nm; The thickness of hole blocking layer (TPBi) is 5nm; The thickness of electron transfer layer (Bphen) is 60nm; Electron injecting layer (Bphen:CsN
3) thickness be 40nm; Cathode layer adopts the Al layer, and its thickness is 150nm.
A kind of white-light electroluminescence device, its structure is followed successively by:
Glass/ITO/MoO
3/ NPB/TCTA/Bepp
2: Ir (MDQ)
2(acac)/TCTA/TBADN:TBPe/TCTA/Bepp
2: Ir (ppy)
3/ TPBi/Bphen/Bphen:CsN
3/ Al.
About the white-light electroluminescence device among this embodiment, by its structure, and adopt evaporation coating technique, successively each organic function layer is carried out the vapor deposition preparation; Wherein, in the composite construction of luminescent layer: the red light material of ruddiness phosphorescence luminescent layer is Ir (MDQ)
2(acac), doped body is Bepp
2, the red light material doping ratio is 2.5%, thickness is 7nm; The material of first wall is TCTA, and thickness is 10nm; The blue light material of blue light fluorescence coating is TBPe, and main body is TBADN, and the blue light material doping ratio is 6%, and thickness is 15nm; The material of second layer wall is TCTA, and thickness is 10nm; The green light material of green glow phosphorescence luminescent layer is Ir (ppy)
3, doped body is Bepp
2, the green light material doping ratio is 7%, thickness is 10nm.Other organic function layer structures of white-light electroluminescence device, as, hole injection layer (MoO
3) thickness be 5nm, the thickness of hole transmission layer (NPB) is 5nm; The thickness of electronic barrier layer (TCTA) is 5nm; The thickness of hole blocking layer (TPBi) is 5nm; The thickness of electron transfer layer (Bphen) is 60nm; Electron injecting layer (Bphen:CsN
3) thickness be 40nm; Cathode layer adopts the Al layer, and its thickness is 150nm.
A kind of white-light electroluminescence device, its structure is followed successively by: glass/ITO/MoO
3/ NPB/TCTA/Bepp
2: Ir (MDQ)
2(acac)/
TPD/TPD:BCzVBi/TPD/Bepp
2:Ir(ppy)
3/TPBi/Bphen/Bphen:CsN
3/Al。
About the white-light electroluminescence device among this embodiment, by its structure, and adopt evaporation coating technique, successively each organic function layer is carried out the vapor deposition preparation; Wherein, in the composite construction of luminescent layer: the red light material of ruddiness phosphorescence luminescent layer is Ir (MDQ)
2(acac), doped body is Bepp
2, the red light material doping ratio is 2%, thickness is 11nm; The material of first wall is TPD, and thickness is 2nm; The blue light material of blue light fluorescence coating is BCzVBi, and main body is TPD, and the blue light material doping ratio is 9%, and thickness is 11nm; The material of second layer wall is TPD, and thickness is 2nm; The green light material of green glow phosphorescence luminescent layer is Ir (ppy)
3, doped body is Bepp
2, the green light material doping ratio is 7%, thickness is 10nm.Other organic function layer structures of white-light electroluminescence device, as, hole injection layer (MoO
3) thickness be 5nm, the thickness of hole transmission layer (NPB) is 5nm; The thickness of electronic barrier layer (TCTA) is 5nm; The thickness of hole blocking layer (TPBi) is 5nm; The thickness of electron transfer layer (Bphen) is 60nm; Electron injecting layer (Bphen:CsN
3) thickness be 40nm; Cathode layer adopts the Al layer, and its thickness is 150nm.
Should be understood that above-mentioned statement to preferred embodiment of the present invention is comparatively detailed, can not therefore think the restriction to scope of patent protection of the present invention, scope of patent protection of the present invention should be as the criterion with accompanying claims.
Claims (10)
1. white-light electroluminescence device, its structure is followed successively by: substrate/conductive layer/hole injection layer/hole transmission layer/electronic barrier layer/luminescent layer/hole blocking layer/electron transfer layer/electron injecting layer/cathode layer; It is characterized in that said luminescent layer is a lamination layer structure, this lamination layer structure is followed successively by: ruddiness phosphorescence luminescent layer/first wall/blue light-emitting/second wall/green glow phosphorescence luminescent layer; Said ruddiness phosphorescence luminescent layer be prepared in said electronic barrier layer surface, said hole blocking layer is prepared in said green glow phosphorescence luminescent layer surface.
2. white-light electroluminescence device according to claim 1; It is characterized in that, the material of said ruddiness phosphorescence luminescent layer be two (2-methyl-diphenyl quinoxaline) (acetylacetone,2,4-pentanediones) close iridium, two (1-phenyl isoquinolin quinoline) (acetylacetone,2,4-pentanedione) close iridium, or three (1-phenyl-isoquinolin) close iridium and be doped to arbitrary mixture of being formed in the beryllium complex respectively.
3. white-light electroluminescence device according to claim 1 is characterized in that, the material of said first wall and second wall is respectively 2-butyl-9; 10-two-(2-naphthyl) anthracene, N, N '-two (3-aminomethyl phenyl)-N, N '-diphenyl-4; 4 '-benzidine (TPD), 4,4 ', 4 " three (carbazole-9-yl) triphenylamine, 4; 4 '-two (9-carbazole) biphenyl, N, N '-(1-naphthyl)-N, N '-diphenyl-4; 4 '-benzidine, or 1,3, at least a in 5-triphenylbenzene or the CuPc.
4. white-light electroluminescence device according to claim 1 is characterized in that, the material Wei perylene of said blue light-emitting, perylene derivative, triphenylamine diphenyl ethylene derivatives, triphenylamine connect naphthyl ethene derivatives or styrene derivative and 2-butyl-9; 10-two-(2-naphthyl) anthracene, N, N '-two (3-aminomethyl phenyl)-N, N '-diphenyl-4; 4 '-benzidine (TPD), 4,4 ', 4 " mix in the mixture of forming any of three (carbazole-9-yl) triphenylamine, 4; 4 '-two (9-carbazole) biphenyl, N, N '-(1-naphthyl)-N, N '-diphenyl-4; 4 '-benzidine, or 1,3,5-triphenylbenzene or CuPc.
5. white-light electroluminescence device according to claim 1; It is characterized in that the material of said green glow phosphorescence luminescent layer is that three (2-phenylpyridines) close iridium or acetopyruvic acid two (2-phenylpyridine) iridium is doped to arbitrary mixture of being formed in the beryllium complex respectively.
6. according to claim 2 or 5 described white-light electroluminescence devices; It is characterized in that said beryllium complex material is any in fen yl pyridines beryllium, 10-hydroxy benzo quinoline beryllium, oxine beryllium, 2-methyl-oxine beryllium, oxine beryllium or the 7-propyl group-8 oxyquinoline beryllium.
7. white-light electroluminescence device according to claim 1 is characterized in that, the material of said hole injection layer is molybdenum trioxide, tungstic acid, VO
xOr in the vanadic oxide any.
8. white-light electroluminescence device according to claim 1 is characterized in that the material of said hole transmission layer and electronic barrier layer is respectively N, N '-two (3-aminomethyl phenyl)-N; N '-diphenyl-4,4 '-benzidine, 4,4 '; 4 " three (carbazole-9-yl) triphenylamine (, N, N '-(1-naphthyl)-N, N '-diphenyl-4; 4 '-benzidine, 1,3, any in 5-triphenylbenzene or the CuPc.
9. white-light electroluminescence device according to claim 1 is characterized in that, the material of said electron transfer layer and hole blocking layer is respectively 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1; 3,4-oxadiazole, oxine aluminium, 2,5-two (1-naphthyl)-1; 3,4-diazole, 4,7-diphenyl-1; 10-phenanthroline, 1,2, any in 4-triazole derivative, N-aryl benzimidazole or the quinoxaline derivant.
10. white-light electroluminescence device according to claim 1 is characterized in that, the material of said electron injecting layer is Cs
2CO
3, CsN
3, LiF, CsF, CaF
2, MgF
2Perhaps any among the NaF.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100450264A CN102651452A (en) | 2011-02-24 | 2011-02-24 | White light electrogenerated light-emitting apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100450264A CN102651452A (en) | 2011-02-24 | 2011-02-24 | White light electrogenerated light-emitting apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102651452A true CN102651452A (en) | 2012-08-29 |
Family
ID=46693394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011100450264A Pending CN102651452A (en) | 2011-02-24 | 2011-02-24 | White light electrogenerated light-emitting apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102651452A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104037349A (en) * | 2013-03-06 | 2014-09-10 | 海洋王照明科技股份有限公司 | Stacked organic light emitting device and preparation method thereof |
| CN104183778A (en) * | 2013-05-24 | 2014-12-03 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| CN104716264A (en) * | 2013-12-11 | 2015-06-17 | 昆山工研院新型平板显示技术中心有限公司 | Organic light-emitting device and display device with same |
| CN105336874A (en) * | 2015-12-08 | 2016-02-17 | 昆山工研院新型平板显示技术中心有限公司 | Organic light emitting diode, driving method thereof and organic light emitting display screen |
| CN107403870A (en) * | 2017-06-21 | 2017-11-28 | 武汉华星光电半导体显示技术有限公司 | WOLED devices |
| CN110943174A (en) * | 2018-09-25 | 2020-03-31 | Tcl集团股份有限公司 | Quantum dot white light diode |
| CN110943173A (en) * | 2018-09-25 | 2020-03-31 | Tcl集团股份有限公司 | Quantum dot white light diode |
| CN111628094A (en) * | 2015-12-24 | 2020-09-04 | 乐金显示有限公司 | Organic light emitting display device and organic light emitting stack structure |
| JP2022119842A (en) * | 2012-03-14 | 2022-08-17 | 株式会社半導体エネルギー研究所 | Light-emitting element, lighting device, light-emitting device, display device, and electronic device |
| US11502265B2 (en) | 2018-09-25 | 2022-11-15 | Tcl Technology Group Corporation | Quantum dot white light diode |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101404323A (en) * | 2007-10-03 | 2009-04-08 | 精工爱普生株式会社 | Light-emitting device, display, and electronic apparatus |
| US20090261360A1 (en) * | 2008-01-29 | 2009-10-22 | Seiko Epson Corporation | Light-emitting element, display device, and electronic apparatus |
| CN101630721A (en) * | 2009-08-11 | 2010-01-20 | 昆山维信诺显示技术有限公司 | Organic electroluminescent component |
-
2011
- 2011-02-24 CN CN2011100450264A patent/CN102651452A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101404323A (en) * | 2007-10-03 | 2009-04-08 | 精工爱普生株式会社 | Light-emitting device, display, and electronic apparatus |
| US20090261360A1 (en) * | 2008-01-29 | 2009-10-22 | Seiko Epson Corporation | Light-emitting element, display device, and electronic apparatus |
| CN101630721A (en) * | 2009-08-11 | 2010-01-20 | 昆山维信诺显示技术有限公司 | Organic electroluminescent component |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2022119842A (en) * | 2012-03-14 | 2022-08-17 | 株式会社半導体エネルギー研究所 | Light-emitting element, lighting device, light-emitting device, display device, and electronic device |
| JP7326535B2 (en) | 2012-03-14 | 2023-08-15 | 株式会社半導体エネルギー研究所 | Light-emitting elements, lighting devices, light-emitting devices, display devices, and electronic devices |
| CN104037349A (en) * | 2013-03-06 | 2014-09-10 | 海洋王照明科技股份有限公司 | Stacked organic light emitting device and preparation method thereof |
| CN104183778A (en) * | 2013-05-24 | 2014-12-03 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| CN104716264A (en) * | 2013-12-11 | 2015-06-17 | 昆山工研院新型平板显示技术中心有限公司 | Organic light-emitting device and display device with same |
| CN105336874A (en) * | 2015-12-08 | 2016-02-17 | 昆山工研院新型平板显示技术中心有限公司 | Organic light emitting diode, driving method thereof and organic light emitting display screen |
| CN111628094A (en) * | 2015-12-24 | 2020-09-04 | 乐金显示有限公司 | Organic light emitting display device and organic light emitting stack structure |
| CN111628094B (en) * | 2015-12-24 | 2023-07-04 | 乐金显示有限公司 | Organic light emitting display device and organic light emitting stacked structure |
| CN107403870A (en) * | 2017-06-21 | 2017-11-28 | 武汉华星光电半导体显示技术有限公司 | WOLED devices |
| CN110943173A (en) * | 2018-09-25 | 2020-03-31 | Tcl集团股份有限公司 | Quantum dot white light diode |
| CN110943173B (en) * | 2018-09-25 | 2021-05-18 | Tcl科技集团股份有限公司 | Quantum dot white light diode |
| CN110943174A (en) * | 2018-09-25 | 2020-03-31 | Tcl集团股份有限公司 | Quantum dot white light diode |
| US11502265B2 (en) | 2018-09-25 | 2022-11-15 | Tcl Technology Group Corporation | Quantum dot white light diode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102651451B (en) | Electroluminescence device | |
| CN102651452A (en) | White light electrogenerated light-emitting apparatus | |
| CN100484353C (en) | Organic electroluminescent part | |
| CN102810644A (en) | Laminated organic electroluminescent device and preparation method thereof | |
| CN102790181A (en) | Lamination transmission type white organic electroluminescent device | |
| CN102414856A (en) | Radiation-emitting device | |
| CN102651454B (en) | Electroluminescent device, display device and preparation method of electroluminescent device | |
| CN102891262A (en) | Lamination organic electroluminescent device and preparation method thereof | |
| CN100470877C (en) | Organic electro phosphorescent device and its preparation method | |
| KR20130135192A (en) | Organoluminescent device | |
| CN102931357B (en) | Two emission layer hemispherical shell organic electroluminescence device and preparation method thereof | |
| CN102842682A (en) | Stacked organic electroluminescence device and manufacturing method thereof | |
| EP2787792A1 (en) | Polymeric electroluminescent device and method for preparing same | |
| KR20130135191A (en) | Stacked organoluminescent device | |
| CN102810645A (en) | Transmissive organic electroluminescent device and preparation method thereof | |
| CN102738400B (en) | A kind of white-light electroluminescence device | |
| CN104638115A (en) | Organic light-emitting device and preparation method thereof | |
| CN104638162A (en) | Organic electroluminescent device and production method thereof | |
| CN102738398A (en) | White light electroluminescent device | |
| CN102810646A (en) | Laminated organic electroluminescence device and preparation method thereof | |
| CN102738399A (en) | White light electroluminescent device | |
| CN102683599B (en) | The luminescent layer of white-light electroluminescence device, its preparation method and application | |
| CN102683600B (en) | Charge regeneration structure, its preparation method and application | |
| CN103296219A (en) | Organic electroluminescence device and preparing method thereof | |
| CN102790180A (en) | Transmission organic electroluminescent device with color conversion layer outside |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120829 |