CN102683600B - Charge regeneration structure, its preparation method and application - Google Patents
Charge regeneration structure, its preparation method and application Download PDFInfo
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- CN102683600B CN102683600B CN201110055833.4A CN201110055833A CN102683600B CN 102683600 B CN102683600 B CN 102683600B CN 201110055833 A CN201110055833 A CN 201110055833A CN 102683600 B CN102683600 B CN 102683600B
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Abstract
The present invention is applicable to technical field of organic electroluminescence, provides a kind of charge regeneration structure, its preparation method and application.This charge regeneration structure comprises phase doped p type compound, has the organic material of electron transport ability and n-type semiconductor, and the homo energy level of this p-type compound is greater than 5.0, and weight percentage is 10-40%; This n-type semiconductor weight percentage is 30-50%.Charge regeneration structure of the present invention is by jointly forming single layer structure by n-type semiconductor, p-type compound and the organic material with electron transport ability, avoid the boundary defect of charge regeneration structure, the resistance of charge regeneration structure is reduced greatly, and the starting resistor achieving organic electroluminescence device significantly reduces; Preparation method of the present invention, simple to operate, with low cost, be very suitable for suitability for industrialized production.
Description
Technical field
The invention belongs to field of organic electroluminescence, particularly relate to a kind of charge regeneration structure, its preparation method and application.
Background technology
At present, in order to improve luminosity and luminous efficiency, laminated organic electroluminescent device more and more comes into one's own, and this structure is normally together in series several luminescence unit as articulamentum with electric charge revived structure.Compared with assorted with unit device, multilayer devices often has current efficiency at double and luminosity, the original intensity of lamination OLED is larger, when measuring under identical current density, be converted into the original intensity of unit component, stacked device has the longer life-span, and the luminescence unit series hybrid of different colours also can be become white light by this laminated device easily, thus realizes the transmitting of white light.
The charge regeneration structure of laminated device must have Electronic reproduction ability and hole power of regeneration, and has reasonable injectability, effectively electronics and hole could be injected into each luminescence unit, thus realize the white light emission of device.Current way be two kinds have hole inject or the material of electron injection respectively as charge generating layers (as Cs:BCP/V
2o
5), or N-shaped and p-type doped layer respectively as charge regeneration structure (as N-shaped (Alq
3: Li) and p-type (NPB:FeCl
3)), form the charge regeneration structure (more than at least two-layer) of compound, but this charge regeneration structure at least needs the operation of carrying out more than twice, certain complexity is brought to preparation, simultaneously, there is certain boundary defect (change as contact resistance between layers) between two-layer charge regeneration structure, and need higher starting resistor.
Summary of the invention
In view of this, the embodiment of the present invention provides a kind of charge regeneration structure, solves charge regeneration structure Presence of an interface defect in prior art and causes the technical problem that organic electroluminescence device starting resistor is high.
The embodiment of the present invention is achieved in that
A kind of charge regeneration structure, comprise p-type semiconductor material, have the organic material of electron transport ability and n-type semiconductor, the homo energy level of this p-type semiconductor material is greater than 5.0, and weight percentage is 10-40%; This n-type semiconductor weight percentage is 30-50%, and this weight percentage with the organic material of electron transport ability is 10-60%.
The embodiment of the present invention provides above-mentioned charge regeneration structure preparation method further, comprises the steps:
By p-type semiconductor material, the organic material with electron transport ability, and n-type semiconductor mixing, obtain mixture, the homo energy level of this p-type semiconductor material is greater than 5.0, and weight percentage is 10-40%; This n-type semiconductor weight percentage is 30-50%; This weight percentage with the organic material of electron transport ability is 10-60%;
This mixture is carried out evaporation, sputtering or spin coating, forms charge regeneration structure.
The embodiment of the present invention also provides the application of above-mentioned charge regeneration structure in organic electroluminescence device.
Embodiment of the present invention charge regeneration structure is by jointly forming single layer structure by n-type semiconductor, p-type semiconductor material and the organic material with electron transport ability, avoid the inside Presence of an interface defect of charge regeneration structure, reduce the resistance of charge regeneration structure, reduce the starting resistor of organic electroluminescence device; Embodiment of the present invention preparation method, simple to operate, with low cost, be very suitable for suitability for industrialized production.
Accompanying drawing explanation
Fig. 1 is organic electroluminescence device current density and the voltage relationship comparison diagram of the embodiment of the present invention and comparative example.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
The embodiment of the present invention provides a kind of charge regeneration structure, comprises p-type semiconductor material, has the organic material of electron transport ability, and n-type semiconductor, the homo energy level of this p-type semiconductor material is greater than 5.0, and weight percentage is 10-40%; This n-type semiconductor weight percentage is 30-50%, and this weight percentage with the organic material of electron transport ability is 10-60%.
Particularly, this charge regeneration structure comprises p-type semiconductor material, has the organic material of electron transport ability and n-type semiconductor, and this p-type semiconductor material, the organic material with electron transport ability and n-type semiconductor are adulterated mutually, Homogeneous phase mixing; By p-type semiconductor material and n-type semiconductor (namely lithium salts is or/and cesium salt) are mixed, form independent one deck charge regeneration structure, the resistance of charge regeneration structure is greatly reduced, achieves the remarkable reduction of organic electroluminescence device starting resistor.
Particularly, this p-type semiconductor material refers to p-type semiconductor material, and the homo energy level of this P type semiconductor material is greater than 5.0 (i.e. homo energy level be greater than 5.0 p-type semiconductor material), preferred homo energy level, between 5.0-5.5, does not have other restriction.Such as, molybdenum trioxide (MoO
3), tungstic acid (WoO
3) or vanadic oxide (V
2o
5) in one or more, when selecting two or more, respective percentage by weight does not limit.Meanwhile, molybdenum oxide (MoO
3), tungsten oxide (WoO
3) or vanadic oxide also there is certain n-type semiconductor characteristic, there is electron injection ability, thus the electron injection efficiency of this organic electroluminescence device luminescence unit be improved, the luminous efficiency of organic electroluminescence device is strengthened.
Particularly, this n-type semiconductor, is specifically as follows the one in cesium salt or lithium salts, or cesium salt and lithium salts, when selecting cesium salt and lithium salts, cesium salt and lithium salts do not have the restriction of part by weight simultaneously, and the weight percentage of n-type semiconductor is 30-50%.Cesium salt or lithium salts are not specifically limited, and such as, cesium salt comprises cesium carbonate (Cs
2cO
3), nitrine caesium (CsN
3), cesium fluoride (CsF), cesium chloride (CsCl), cesium bromide (CsBr); Such as, lithium salts comprises lithium fluoride (LiF), lithium chloride (LiCl), lithium bromide (LiBr) or lithium carbonate (Li
2cO
3).
Further, this electric charge is again in stratification, the weight percentage of n-type semiconductor is greater than the weight percentage of p-type semiconductor material, transfer rate due to electronics is greater than the transfer rate in hole, by using n-type semiconductor more more than p-type semiconductor material, ensure the transfer rate that electronics is normal.
Particularly, this charge regeneration structure is layer structure, and thickness is 5-30 nanometer.
Particularly, this organic material with electron transport ability is selected from, oxine aluminium (Alq
3), 1,2,4-triazole derivative (as TAZ), N-aryl benzimidazole (TPBI), 4,7-diphenyl-1,10-phenanthroline (Bphen) or two (2-methyl-oxine)-(4-xenol) aluminium (BALQ), quinoxaline derivant (TPQ), 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole (PBD), 2,5-bis-(1-naphthyl)-1,3,4-diazole (BND), this weight percentage with the organic material of electron transport ability is 10-60%.
Embodiment of the present invention charge regeneration structure, by jointly forming single layer structure by n-type semiconductor, p-type semiconductor material and the organic material with electron transport ability, avoid the boundary defect of charge regeneration structure, reduce the resistance of charge regeneration structure, the starting resistor achieving organic electroluminescence device significantly reduces.
Embodiment of the present invention charge regeneration layer is applicable to organic electroluminescence device, this organic electroluminescence device comprises ito glass, two or more luminescence unit, charge regeneration structure and negative electrode, this charge regeneration structure is between adjacent two luminescence units of this organic electroluminescence device, and with these two luminescence units contact, such as, if this organic electroluminescence device has two luminescence units, its structure is:
Ito glass/the first luminescence unit/charge regeneration structure/the second luminescence unit/negative electrode;
If this organic electroluminescence device has three luminescence units, its structure is:
Ito glass/the first luminescence unit/charge regeneration structure/the second luminescence unit/charge regeneration structure/three luminescence unit/negative electrode;
By that analogy.
The structure of each luminescence unit can be:
Hole injection layer/hole transmission layer/electronic barrier layer/luminescent layer/hole blocking layer/electron transfer layer; Or
Hole transmission layer/electronic barrier layer/luminescent layer/hole blocking layer/electron transfer layer; Or
Hole injection layer/hole transmission layer/luminescent layer/hole blocking layer/electron transfer layer; Or
Hole transmission layer/luminescent layer/hole blocking layer/electron transfer layer; Or
Hole injection layer/hole transmission layer/electronic barrier layer/luminescent layer/electron transfer layer; Or
Hole injection layer/hole transmission layer/luminescent layer/electron transfer layer; Or
Hole transmission layer/luminescent layer/electron transfer layer.
The material of above-mentioned hole injection layer, hole transmission layer, electronic barrier layer, luminescent layer, hole blocking layer and electron transfer layer is as follows:
Hole injection layer adopts molybdenum trioxide (MoO
3), tungstic acid (WO
3), VO
x(mixture of vanadium dioxide and vanadic oxide) or vanadic oxide (V
2o
5)
That hole transmission layer adopts is N, N '-two (3-aminomethyl phenyl)-N, N '-diphenyl-4,4 '-benzidine (TPD), N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine (NPB), 1,3,5-triphenylbenzene (TDAPB) or CuPc CuPc.
Luminescent layer adopts four-tert-butyl group perylene (TBP), 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river pyridine of a specified duration-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (AND), two (2-methyl-oxine)-(4-xenol) aluminium (BALQ), 4-(dintrile methene)-2-isopropyl-6-(1,1,7,7-tetramethyl Lip river pyridine of a specified duration-9-vinyl)-4H-pyrans (DCJTI), dimethylquinacridone (DMQA), oxine aluminium (Alq
3), two (4,6-difluorophenyl pyridinato-N, C
2) pyridinecarboxylic conjunction iridium (FIrpic), two (4,6-difluorophenyl pyridinato)-four (1-pyrazolyl) boric acid closes iridium (FIr6), two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanediones) close iridium (Ir (MDQ)
2(acac)), two (1-phenyl isoquinolin quinoline) (acetylacetone,2,4-pentanediones) close iridium (Ir (piq)
2(acac)), acetopyruvic acid two (2-phenylpyridine) iridium (Ir (ppy)
2(acac)), three (1-phenyl-isoquinolin) close iridium (Ir (piq)
3) or three (2-phenylpyridines) close iridium (Ir (ppy)
3) one or more.Luminescent layer is that one or both of hole mobile material or electron transport material carry out mixing and doping preparation, and the doping weight mass ratio of hole mobile material and electron transport material is 1%-20%.
Electron transfer layer adopts 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole (PBD), oxine aluminium (Alq
3), 2,5-bis-(1-naphthyl)-1,3,4-diazole (BND), 1,2,4-triazole derivative (as TAZ), N-aryl benzimidazole (TPBI) or quinoxaline derivant (TPQ).
Electron injecting layer adopts Cs
2cO
3, also can adopt LiF, CsF, CaF
2, MgF
2or NaF.
The anode of embodiment of the present invention organic electroluminescence device is ito glass; Metallic cathode adopts silver (Ag), also can adopt aluminium (Al), magnesium: silver (Mg:Ag) alloy or gold (Au).
Hole blocking layer selects above-mentioned electron transport material, and electronic barrier layer selects above-mentioned hole mobile material.
Above-mentioned hole injection layer, hole transmission layer, electronic barrier layer, luminescent layer, hole blocking layer, negative electrode and electron transfer layer, according to the structure of above-mentioned luminescence unit, adopt the method preparations such as evaporation coating method, sputtering, spin coating.
The embodiment of the present invention provides above-mentioned charge regeneration structure preparation method further, comprises the steps:
By p-type semiconductor material, the organic material with electron transport ability, and n-type semiconductor mixing, obtain mixture, the homo energy level of this p-type semiconductor material is greater than 5.0, and weight percentage is 10-40%; This n-type semiconductor weight percentage is 30-50%;
This mixture is carried out evaporation, sputtering or spin coating, forms charge regeneration structure.
Particularly, in embodiment of the present invention charge regeneration structure preparation method, the evaporation used, sputtering or spin coating method are not specifically limited, the substrate used in evaporation, sputtering or spin coating is for using the luminescence unit of the organic electroluminescence device of this charge regeneration structure, this luminescence unit is identical with aforesaid, does not repeat to set forth at this.
For the organic electroluminescence device containing two luminescence units, its preparation method is specially:
After preparing the first luminescence unit of organic electroluminescence device, this first luminescence unit prepares charge regeneration structure, then in this charge regeneration structure, prepare the second luminescence unit, this first luminescence unit, charge regeneration structure and the second luminescence unit constitute organic electroluminescence device.
Further, if embodiment of the present invention organic electroluminescence device has plural luminescence unit, then evaporation, sputtering or spin coating one deck charge regeneration structure on the second luminescence unit, and then prepare the 3rd luminescence unit.By that analogy.
Particularly, this N-shaped material, p-type semiconductor material and to have the organic material of electron transport ability identical with aforesaid, do not repeat to set forth at this.
Particularly, the thickness of the charge regeneration structure prepared by embodiment of the present invention preparation method is 5-30 nanometer.
Embodiment of the present invention charge regeneration structure preparation method, simple to operate, with low cost, easily the thickness of charge regeneration structure is controlled, be very suitable for suitability for industrialized production.
The embodiment of the present invention provides the application of above-mentioned charge regeneration structure in organic electroluminescence device further.The organic electroluminescence device of the charge regeneration structure of the application embodiment of the present invention, starting resistor greatly reduces, and the useful life of this organic electroluminescence device also significantly strengthens.
Below in conjunction with specific embodiment, above-mentioned organic electroluminescence device preparation method is described in detail.
Embodiment one
Embodiment of the present invention organic electroluminescence device preparation method, comprises the steps:
Prepare the first luminescence unit:
Evaporation, formation (molybdenum trioxide) hole injection layer, over the hole-injecting layer evaporation, formation (Alq on ito glass
3) luminescent layer, over the light-emitting layer evaporation, formation (PBD) electron transfer layer;
Preparation charge regeneration structure:
By molybdenum trioxide, Bphen, the mixing of nitrine caesium, obtain mixture, the weight percentage of this molybdenum trioxide is 20%; The weight percentage of this nitrine caesium is 40%, then this mixture is carried out evaporation on the first luminescence unit electron transfer layer, forms the charge regeneration structure that thickness is 15 nanometers;
Prepare the second luminescence unit:
Evaporation, formation (NPB) hole transmission layer, over the hole-transporting layer evaporation, formation (Alq in this charge regeneration structure
3) luminescent layer, over the light-emitting layer evaporation, formation (PBD) electron transfer layer, evaporation, formation (LiF) electron injecting layer on this electron transfer layer;
Prepare negative electrode:
On this second luminescence unit electron injecting layer, evaporation, formation silver cathode, obtain organic electroluminescence device.
Embodiment two
Embodiment of the present invention organic electroluminescence device preparation method, comprises the steps:
Prepare the first luminescence unit:
Ito glass sputters, form (molybdenum trioxide) hole injection layer, over the hole-injecting layer evaporation, formation (NPB) hole transmission layer, sputter over the hole-transporting layer, form (NPB) electronic barrier layer, this electronic barrier layer sputters, forms (AND) luminescent layer, over the light-emitting layer evaporation, formation (Alq
3) hole blocking layer, on this hole blocking layer sputter, formed (Alq
3) electron transfer layer;
Preparation charge regeneration structure:
By molybdenum trioxide, BALQ, the mixing of nitrine caesium, obtain mixture, this molybdenum trioxide is 10% relative to the weight percentage of BALQ; This nitrine caesium is 20% relative to the weight percentage of this BALQ, then is sputtered on the first luminescence unit electron transfer layer by this mixture, forms the charge regeneration structure that thickness is 10 nanometers;
Prepare the second luminescence unit:
This charge regeneration structure sputters, form (molybdenum trioxide) hole injection layer, sputter over the hole-injecting layer, form (TDAPB) hole transmission layer, sputter over the hole-transporting layer, form (TDAPB) electronic barrier layer, this electronic barrier layer sputters, form (AND) luminescent layer, sputter over the light-emitting layer, form (Alq
3) hole blocking layer, on this hole blocking layer sputter, formed (Alq
3) electron transfer layer;
Prepare negative electrode:
This second luminescence unit electron transfer layer sputters, forms silver cathode, obtain organic electroluminescence device.
Embodiment three
Embodiment of the present invention organic electroluminescence device preparation method, comprises the steps:
Prepare the first luminescence unit:
Spin coating on ito glass, formation (tungstic acid) hole injection layer, spin coating over the hole-injecting layer, formation (NPB) hole transmission layer, spin coating over the hole-transporting layer, formation (Ir (piq)
3) luminescent layer, over the light-emitting layer spin coating, formation (BND) hole blocking layer, spin coating on this hole blocking layer, formation (BND) electron transfer layer;
Preparation charge regeneration structure:
By molybdenum trioxide, TPBI, the mixing of nitrine caesium, obtain mixture, this molybdenum trioxide is 40% relative to the weight percentage of TPBI; This nitrine caesium is 50% relative to the weight percentage of this TPBI, then this mixture is carried out spin coating on the first luminescence unit electron transfer layer, forms the charge regeneration structure that thickness is 30 nanometers;
Prepare the second luminescence unit:
Spin coating in this charge regeneration structure, formation (molybdenum trioxide) hole injection layer, spin coating over the hole-injecting layer, formation (NPB) hole transmission layer, spin coating over the hole-transporting layer, formation (NPB) electronic barrier layer, spin coating on this electronic barrier layer, formation (AND) luminescent layer, spin coating over the light-emitting layer, formation (Alq
3) hole blocking layer, spin coating on this hole blocking layer, formation (Alq
3) electron transfer layer;
Prepare negative electrode:
Spin coating on this second luminescence unit electron transfer layer, formation silver cathode, obtain organic electroluminescence device.
Embodiment four
The present embodiment organic electroluminescence device preparation method is with reference to embodiment one, and wherein, preparation charge regeneration configuration steps is:
Molybdenum trioxide, Bphen, cesium carbonate mix, and obtain mixture, this molybdenum trioxide is 25% relative to the weight percentage of Bphen; This cesium carbonate is 35% relative to the weight percentage of this Bphen, then this mixture is carried out evaporation on the first luminescence unit electron transfer layer, forms the charge regeneration structure that thickness is 15 nanometers.
Embodiment five
The present embodiment organic electroluminescence device preparation method is with reference to embodiment two, and wherein, preparation charge regeneration configuration steps is:
Molybdenum trioxide, BALQ, cesium fluoride mix, and obtain mixture, this molybdenum trioxide is 15% relative to the weight percentage of BALQ; This cesium fluoride is 25% relative to the weight percentage of this BALQ, then this mixture is carried out evaporation on the first luminescence unit electron transfer layer, forms the charge regeneration structure that thickness is 18 nanometers.
Embodiment six
The present embodiment organic electroluminescence device preparation method is with reference to embodiment three, and wherein, preparation charge regeneration configuration steps is:
Tungstic acid, TPBI, lithium fluoride mix, and obtain mixture, this tungstic acid is 15% relative to the weight percentage of TPBI; This lithium fluoride is 40% relative to the weight percentage of this TPBI, then this mixture is carried out evaporation on the first luminescence unit electron transfer layer, forms the charge regeneration structure that thickness is 15 nanometers.
Embodiment seven
The present embodiment organic electroluminescence device preparation method is with reference to embodiment one, and wherein, preparation charge regeneration configuration steps is:
Tungstic acid, Bphen, lithium fluoride mix, and obtain mixture, this tungstic acid is 30% relative to the weight percentage of Bphen; This lithium fluoride is 35% relative to the weight percentage of this Bphen, then this mixture is carried out evaporation on the first luminescence unit electron transfer layer, forms the charge regeneration structure that thickness is 12 nanometers.
Embodiment eight
The present embodiment organic electroluminescence device preparation method is with reference to embodiment two, and wherein, preparation charge regeneration configuration steps is:
Vanadic oxide, BALQ, cesium carbonate mix, and obtain mixture, this vanadic oxide is 35% relative to the weight percentage of BALQ; This cesium carbonate is 45% relative to the weight percentage of this BALQ, then this mixture is carried out evaporation on the first luminescence unit electron transfer layer, forms the charge regeneration structure that thickness is 25 nanometers.
Embodiment nine
The present embodiment organic electroluminescence device preparation method is with reference to embodiment three, and wherein, preparation charge regeneration configuration steps is:
Vanadic oxide, TPBI, cesium carbonate mix, and obtain mixture, this vanadic oxide is 40% relative to the weight percentage of TPBI; This cesium carbonate is 50% relative to the weight percentage of this TPBI, then this mixture is carried out evaporation on the first luminescence unit electron transfer layer, forms the charge regeneration structure that thickness is 30 nanometers.
Embodiment ten
The present embodiment organic electroluminescence device preparation method is with reference to embodiment three, and wherein, preparation charge regeneration configuration steps is:
Vanadic oxide, TPBI, lithium carbonate mix, and obtain mixture, this vanadic oxide is 10% relative to the weight percentage of TPBI; This lithium carbonate is 15% relative to the weight percentage of this TPBI, then this mixture is carried out evaporation on the first luminescence unit electron transfer layer, forms the charge regeneration structure that thickness is 30 nanometers.
Comparative example
This comparative example organic electroluminescence device preparation method is with reference to embodiment one, and wherein, the step of preparation charge regeneration structure is:
By nitrine caesium, Bphen mixing, obtain mixture, this nitrine caesium is 20% relative to the weight percentage of Bphen; Again this mixture is carried out evaporation on the first luminescence unit electron transfer layer, form the first charge regeneration structure that thickness is 7 nanometers; In this first charge regeneration structure evaporation, form (molybdenum trioxide) second charge regeneration structure that thickness is 8 nanometers; Then evaporation in this second charge regeneration structure, form other functional layers.
Refer to Fig. 1, Fig. 1 shows the comparison diagram of organic electroluminescence device current density prepared by the embodiment of the present invention and comparative example and voltage relationship.
Can see from figure, when 12V, the laminated device brightness of embodiment of the present invention codope charge regeneration structure is 29082cd/cm
2, comparative example does not have the normal stack device brightness of codope to be 20662cd/cm
2, organic electroluminescence device brightness prepared by the brightness ratio comparative example of organic electroluminescence device prepared by the embodiment of the present invention is much larger, and along with the increase of voltage, the difference of this numerical value is increasing gradually.This illustrates, when after codope, the regeneration in electronics and hole is more effective, and improve the transmission rate in electronics and hole, therefore, the brightness of device obtains increase.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. a charge regeneration structure, comprise the p-type semiconductor material of doping mutually, the organic material with electron transport ability and n-type semiconductor, the homo energy level of described p-type semiconductor material is greater than 5.0, and the weight percentage of described p-type semiconductor material is 10-40%; Described n-type semiconductor weight percentage is 30-50%, described in there is the organic material of electron transport ability weight percentage be 10-60%; The weight percentage of described n-type semiconductor is greater than the weight percentage of described p-type semiconductor material.
2. charge regeneration structure as claimed in claim 1, it is characterized in that, the homo energy level of described p-type semiconductor material is 5.0-5.5.
3. charge regeneration structure as claimed in claim 1, it is characterized in that, the thickness of described charge regeneration structure is 5-30 nanometer.
4. charge regeneration structure as claimed in claim 1, is characterized in that, described p-type semiconductor material to be selected from molybdenum trioxide, tungstic acid or vanadic oxide one or more.
5. charge regeneration structure as claimed in claim 1, it is characterized in that, described n-type semiconductor is selected from cesium salt or/and lithium salts.
6. charge regeneration structure as claimed in claim 1, it is characterized in that, the described organic material with electron transport ability is selected from oxine aluminium, N-aryl benzimidazole, 4,7-diphenyl-1,10-phenanthroline or two (2-methyl-oxine)-(4-xenol) aluminium.
7. a charge regeneration structure preparation method, comprises the steps:
By p-type semiconductor material, the organic material with electron transport ability, and n-type semiconductor mixing, obtain mixture, the homo energy level of described p-type semiconductor material is greater than 5.0, and described p-type semiconductor material weight percentage is 10-40%; Described n-type semiconductor weight percentage is 30-50%; The described weight percentage with the organic material of electron transport ability is 10-60%;
Described mixture is carried out evaporation, sputtering or spin coating, forms charge regeneration structure.
8. charge regeneration structure preparation method as claimed in claim 7, it is characterized in that, the homo energy level of described p-type semiconductor material is 5.0-5.5; The thickness of described charge regeneration structure is 5-30 nanometer.
9. the application of charge regeneration structure in organic electroluminescence device as described in any one of claim 1-6.
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