CN102738399A - White light electroluminescent device - Google Patents

White light electroluminescent device Download PDF

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CN102738399A
CN102738399A CN2011100811135A CN201110081113A CN102738399A CN 102738399 A CN102738399 A CN 102738399A CN 2011100811135 A CN2011100811135 A CN 2011100811135A CN 201110081113 A CN201110081113 A CN 201110081113A CN 102738399 A CN102738399 A CN 102738399A
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layer
light emitting
thickness
light
electroluminescent device
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周明杰
王平
黄辉
陈吉星
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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Abstract

The invention pertains to the field of optoelectronic devices, and discloses a white light electroluminescent device. The device has a layered structure. The layered structure sequentially includes: a substrate/an electrically conductive layer/a hole injection layer/a hole transporting layer/an electron barrier layer/a first blue light emitting layer/a first barrier layer/a red light emitting phosphor layer/a spacer layer/a green light emitting phosphor layer/a second barrier layer/a second blue light emitting layer/a hole barrier layer/an electron transporting layer/an electron injection layer/a cathode layer. The materials of the first and second blue light emitting layers both are a hole transporting material doped with a blue light emitting material, and the materials of the red light emitting phosphor layer and the green light emitting phosphor layer are a beryllium complex material doped with a red light emitting phosphor material and a beryllium complex material doped with a green light emitting phosphor material respectively. According to the white light electroluminescent device of the invention, the first and second barrier layers are respectively arranged between the first blue light emitting layer and the red light emitting phosphor layer, and between the second blue light emitting layer and the green light emitting phosphor layer, so triplet excitons of the blue light emitting material can be diffused into the red light emitting phosphor layer and the green light emitting phosphor layer to undergo radiative transition so as to emit light, so that light emitting efficiency of the device is further improved.

Description

White light electroluminescent device
Technical Field
The invention relates to the field of optoelectronic devices, in particular to a white light electroluminescent device.
Background
In 1987, c.w.tang and VanSlyke of Eastman Kodak company, usa, reported a breakthrough development in organic electroluminescence studies. A double-layer organic electroluminescent device (OLED) with high brightness and high efficiency is prepared by using an ultrathin film technology. In the device with the double-layer structure, the brightness reaches 1000cd/m at 10V2The luminous efficiency is 1.51lm/W, and the lifetime is longer than 100 hours.
The principle of light emission of OLEDs is based on the injection of electrons from the cathode into the Lowest Unoccupied Molecular Orbital (LUMO) of the organic substance and holes from the anode into the Highest Occupied Molecular Orbital (HOMO) of the organic substance under the influence of an applied electric field. The electrons and the holes meet and are combined in the luminescent layer to form excitons, the excitons migrate under the action of an electric field to transfer energy to the luminescent material, and the excited electrons are transited from a ground state to an excited state, and the energy of the excited state is inactivated through radiation to generate photons and release light energy.
The light emitting material is the most important factor affecting the light emitting efficiency, and can be divided into fluorescent material (i.e. blue light material) and phosphorescent material (i.e. red light phosphorescent material and/or green light phosphorescent material), the fluorescent material can only emit light by the inactivation of singlet state radiation due to the triplet state transition being hindered, and the ratio of triplet state excitons to singlet state excitons is about 3: 1; the fluorescent material only has 25 wt% of excitons which can be effectively utilized, the remaining 75 wt% of excitons are attenuated by non-radiation, energy is released in a thermal form, and the temperature of the device is increased, so that the service life of the device is shortened, and the phosphorescent material enables originally impossible triplet state transition to be possible due to the strong self-spin coupling effect of metal atoms, so that the luminous efficiency is greatly improved.
Disclosure of Invention
The invention aims to provide a white light electroluminescent device capable of improving luminous efficiency.
The technical scheme of the invention is as follows:
a white light electroluminescent device is of a laminated structure, and the laminated structure sequentially comprises: substrate/conducting layer/hole injection layer/hole transport layer/electron blocking layer/first blue light emitting layer/first blocking layer/red light phosphorescent emitting layer/spacing layer/green light phosphorescent emitting layer/second blocking layer/second blue light emitting layer/hole blocking layer/electron transport layer/electron injection layer/cathode layer;
the first blue light emitting layer and the second blue light emitting layer are both made of a blue light material doped in a hole transport material, the hole transport material is a main material, and the doping quality percentage of the blue light material is 5-20 wt%;
the red-light phosphorescent light-emitting layer is made of beryllium complex material doped with red-light phosphorescent material, the beryllium complex material is a main material, and the doping quality percentage of the red-light phosphorescent material is 0.5-5 wt%;
the green phosphorescent light emitting layer is made of beryllium complex materials doped with green phosphorescent materials, the beryllium complex materials are main materials, and the doping quality percentage of the green phosphorescent materials is 5-20 wt%.
In the above white light electroluminescent device:
the substrate and the conducting layer can adopt ITO (indium tin oxide) glass, wherein the glass is used as the substrate, and the ITO is used as the conducting layer;
the blue light material is any one of Perylene, Perylene derivative (TBPe), triphenylamine stilbene derivative (DPAVBi or DPAVB), triphenylamine dinaphthyl ethylene derivative (BDAVBi) or styrene derivative (BCzVB or BCzVBi);
the hole transport material is any one of 2-butyl-9, 10-di- (2-naphthyl) anthracene (TBADN), N '-di (3-methylphenyl) -N, N' -diphenyl-4, 4 '-biphenyldiamine (TPD), 4', 4 ″ -tris (carbazol-9-yl) triphenylamine (TCTA), 4 '-di (9-Carbazol) Biphenyl (CBP), N' - (1-naphthyl) -N, N '-diphenyl-4, 4' -biphenyldiamine (NPB), 1, 3, 5-Triphenylbenzene (TDAPB), or copper phthalocyanine (CuPc);
the red light phosphorescent material is bis (2-methyl-diphenyl quinoxaline) (acetylacetone) iridium (Ir (MDQ)2(acac)), bis (1-phenylisoquinoline) (acetylacetonato) iridium (Ir (piq))2(acac)) or tris (1-phenyl-isoquinoline) iridium (Ir (piq)3)；
The green phosphorescent material is tris (2-phenylpyridine) iridium (Ir (ppy)3) Bis (2-phenylpyridine) iridium acetylacetonate (Ir (ppy)2(acac)) or bis (2-p-phenoxyphenylpyridine) iridium acetylacetonate ((Oppy)2Any one of Ir (acac));
the beryllium complex material is phenacyl beryllium pyridine (Bepp)2) 10-hydroxybenzoquinoline beryllium (BeBq)2) 8-Hydroxyquinolinium beryllium (BeqQ)2) 2-methyl-8-hydroxyquinoline beryllium (BeMQ)2) 8-Hydroxyquinoline beryllium (BeQ)2) Or 7-propyl-8-hydroxyquinolinium beryllium (BePrQ)2) Any one of (a);
the materials of the first barrier layer and the second barrier layer are any one of the beryllium complex materials and are consistent with the red light phosphorescent material and the green light forest light material;
the material of the spacing layer is formed by co-doping and mixing the hole transport material and the electron transport material, the mass ratio of the hole transport material to the electron transport material is 1: 1-1: 5, and the electron transport material is 2- (4-biphenyl) -5- (4-tert-butyl) phenyl-1, 3, 4-oxadiazole (PBD) and 8-hydroxyquinoline aluminum (Alq)3) Any of 2, 5-di (1-naphthyl) -1, 3, 4-oxadiazole (BND), 4, 7-diphenyl-1, 10-phenanthroline (Bphen), 1, 2, 4-triazole derivatives (e.g., TAZ), N-arylbenzimidazole (TPBI), or quinoxaline derivatives (TPQ);
the hole injection layer is molybdenum trioxide (MoO)3) Tungsten trioxide (WO)3)、VOxOr vanadium pentoxide (V)2O5) Any one of (a); .
The hole transport layer and the electron blocking layer are respectively made of any one of 1, 1-bis [4- [ N, N '-bis (p-tolyl) amino ] phenyl ] cyclohexane (TAPC), N' -bis (3-methylphenyl) -N, N '-diphenyl-4, 4' -biphenyldiamine (TPD), 4 '-tris (carbazol-9-yl) triphenylamine (TCTA), N' - (1-naphthyl) -N, N '-diphenyl-4, 4' -biphenyldiamine (NPB), 1, 3, 5-Triphenylbenzene (TDAPB) or copper phthalocyanine CuPc;
the electron transport layer and the hole blocking layer are respectively made of 2- (4-biphenyl) -5- (4-tert-butyl) phenyl-1, 3, 4-oxadiazole (PBD) and 8-hydroxyquinoline aluminum (Alq)3) Any of 2, 5-di (1-naphthyl) -1, 3, 4-oxadiazole (BND), 4, 7-diphenyl-1, 10-phenanthroline (Bphen), 1, 2, 4-triazole derivatives (e.g., TAZ), N-arylbenzimidazole (TPBI), or quinoxaline derivatives (TPQ);
the electron injection layer is Cs2CO3、CsN3、LiF、CsF、CaF2、MgF2Or NaF;
the material of the cathode layer may be any one of silver (Ag), aluminum (Al), silver-magnesium (Ag — Mg) alloy, or gold (Au).
According to the white light electroluminescent device, the first blocking layer and the second blocking layer between the blue light emitting layer and the red light and green light phosphorescent layers can effectively block the diffusion of singlet states of the blue light emitting layer, so that triplet excitons of a blue light material can be diffused into the red light and green light phosphorescent layers to emit light in a radiation transition mode, the first blocking layer and the second blocking layer are made of materials which are the same as main bodies of the red light and green light phosphorescent layers, namely beryllium complex materials, and are favorable for energy transmission, and the spacing layer between the red light and green light phosphorescent layers can inhibit the concentration quenching of interface triplet excitons, so that the luminous efficiency is improved; meanwhile, the spacing layer is formed by co-doping the hole transport material and the electron transport material, so that the hole transport capability and the electron transport capability can be further improved, the exciton recombination probability is improved, and the luminous efficiency is finally improved.
Drawings
FIG. 1 is a schematic structural diagram of a white light electroluminescent device according to the present invention;
FIG. 2 is a graph of energy levels of a white light electroluminescent device of example 1;
FIG. 3 is a graph of the luminous efficiencies of the white light electroluminescent device of example 1 and a reference white light electroluminescent device; wherein, curve 1 is the energy efficiency-luminance curve of example 1. Curve 2 is the energy efficiency-luminance curve of the comparative example.
Detailed Description
As shown in fig. 1, the white light electroluminescent device provided by the present invention is a layered structure, and the layered structure sequentially includes: substrate 11/conductive layer 12/hole injection layer 13/hole transport layer 14/electron blocking layer 15/first blue light emitting layer 161/first blocking layer 162/red light phosphorescent emitting layer 163/spacer layer 164/green light phosphorescent emitting layer 165/second blocking layer 166/second blue light emitting layer 167/hole blocking layer 17/electron transport layer 18/electron injection layer 19/cathode layer 20; the composite layer structure of the first blue light emitting layer 161/the first barrier layer 162/the red phosphorescent light emitting layer 163/the spacer layer 164/the green phosphorescent light emitting layer 165/the second barrier layer 166/the second blue light emitting layer 167 constitutes the light emitting layer 16 of the electroluminescent device; in the luminescent layer 16 of the electroluminescent device, the thicknesses of the first blue luminescent layer 161 and the second blue luminescent layer 167 are both 5-15nm, the materials of the first blue luminescent layer and the second blue luminescent layer both adopt hole transport materials as main materials to dope blue light materials, and the doping quality percentage of the blue light materials is 5-20 wt%; the thickness of the red-light phosphorescent light-emitting layer 163 is 5-15nm, beryllium complex material is selected as a main material to dope the red-light phosphorescent material, and the doping percentage of the red-light phosphorescent material is 0.5-5 wt%; the thickness of the green phosphorescent light emitting layer 165 is 1-10nm, the green phosphorescent light emitting layer is made of beryllium complex materials as main materials and doped with green phosphorescent materials, and the doped quality percentage of the green phosphorescent materials is 5-20 wt%.
In the white light electroluminescent device, each organic functional layer is prepared by evaporation in sequence by adopting an evaporation technology.
The white light electroluminescent device of the invention has the following functional layer materials and preparation process technology:
the substrate and the conductive layer can adopt the existing integrated ITO (indium tin oxide) glass, wherein, the glass is the substrate, and the ITO is the conductive layer;
the blue light material is any one of Perylene, Perylene derivative (TBPe), triphenylamine stilbene derivative (DPAVBi or DPAVB), triphenylamine dinaphthyl ethylene derivative (BDAVBi) or styrene derivative (BCzVB or BCzVBi);
the hole transport material is any one of 2-butyl-9, 10-di- (2-naphthyl) anthracene (TBADN), N '-di (3-methylphenyl) -N, N' -diphenyl-4, 4 '-biphenyldiamine (TPD), 4', 4 ″ -tris (carbazol-9-yl) triphenylamine (TCTA), 4 '-di (9-Carbazol) Biphenyl (CBP), N' - (1-naphthyl) -N, N '-diphenyl-4, 4' -biphenyldiamine (NPB), 1, 3, 5-Triphenylbenzene (TDAPB), or copper phthalocyanine (CuPc);
the red light phosphorescent material is bis (2-methyl-diphenyl quinoxaline) (acetylacetone) iridium (Ir (MDQ)2(acac)), bis (1-phenylisoquinoline) (acetylacetonato) iridium (Ir (piq))2(acac)) or tris (1-phenyl-isoquinoline) iridium (Ir (piq)3) Any of the above);
the green phosphorescent material is tris (2-phenylpyridine) iridium (Ir (ppy)3) Bis (2-phenylpyridine) iridium acetylacetonate (Ir (ppy)2(acac))) or iridium bis (2-p-phenylphenylpyridine) acetylacetonate;
the beryllium complex material is phenacyl beryllium pyridine (Bepp)2) 10-hydroxybenzoquinoline beryllium (BeBq)2) 8-Hydroxyquinolinium beryllium (BeqQ)2) 2-methyl-8-hydroxyquinoline beryllium (BeMQ)2) 8-Hydroxyquinoline beryllium (BeQ)2) Or 7-propyl-8-hydroxyquinolinium beryllium (BePrQ)2) Any one of (a);
the materials of the first barrier layer and the second barrier layer are any one of the beryllium complex materials and are consistent with the red light phosphorescent material and the green light forest light material, and the thicknesses of the first barrier layer and the second barrier layer are both 1-10 nm;
the material of the spacing layer is formed by doping and mixing the hole transport material and the electron transport material together, the mass ratio of the hole transport material to the electron transport material is 1: 1-1: 5, and the thickness of the spacing layer is 1-10 nm; the electron transport material in the spacing layer is 2- (4-biphenyl) -5- (4-tert-butyl) phenyl-1, 3, 4-oxadiazole (PBD) and 8-hydroxyquinoline aluminum (Alq)3) Any one of 2, 5-di (1-naphthyl) -1, 3, 4-oxadiazole (BND), 4, 7-diphenyl-1, 10-phenanthroline (Bphen), 1, 2, 4-triazole derivatives (e.g., TAZ), N-arylbenzimidazole (TPBi), or quinoxaline derivatives (TPQ);
the material of the hole injection layer is molybdenum trioxide (MoO)3) Tungsten trioxide (WO)3)、VOxOr vanadium pentoxide (V)2O5) Any of these, preferably MoO3(ii) a Wherein the thickness of the hole injection layer is 5-40nm, and the preferred thickness is 5 nm;
the materials of the hole transport layer and the electron blocking layer are respectively any one of 1, 1-bis [4- [ N, N '-bis (p-tolyl) amino ] phenyl ] cyclohexane (TAPC), N' -bis (3-methylphenyl) -N, N '-diphenyl-4, 4' -biphenyldiamine (TPD), 4 '-tris (carbazol-9-yl) triphenylamine (TCTA), N' - (1-naphthyl) -N, N '-diphenyl-4, 4' -biphenyldiamine (NPB), 1, 3, 5-Triphenylbenzene (TDAPB) or copper phthalocyanine (CuPc), and the thicknesses of the hole transport layer and the electron blocking layer are respectively 5-80 nm; the hole transport layer is preferably NPB, the thickness is preferably 40nm, the electron blocking layer is preferably TCTA, and the thickness is preferably 5 nm;
the materials of the electron transport layer and the hole blocking layer are respectively 2- (4-biphenyl) -5- (4-tert-butyl) phenyl-1, 3, 4-oxadiazole (PBD) and 8-hydroxyquinoline aluminum (Alq)3) 2, 5-bis (1-naphthyl) -1, 3, 4-diazole (BND), 4, 7-diphenyl-1, 10-phenanthroline (Bphen), 1, 2, 4-triazole derivatives (e.g., TAZ), N-arylbenzimidazole (TPBi) or quinoxaline derivatives (TPQ). Wherein the thickness of the hole blocking layer is 3-10nm, preferably 5nm, and the material of the hole blocking layer is preferably TPBi; the thickness of the electron transport layer is 40-80nm, preferably 60nm, and the material of the electron transport layer is preferably Bphen;
the material of the electron injection layer is Cs2CO3、CsN3、LiF、CsF、CaF2、MgF2Or NaF, the thickness of the electron injection layer is 0.5-5 nm; for the material of the injection layer, Cs may also be used2CO3、CsN3、LiF、CsF、CaF2、MgF2Or NaF with electron transport materials (e.g., 2- (4-biphenyl) -5- (4-tert-butyl) phenyl-1, 3, 4-oxadiazole (PBD), 8-hydroxyquinoline aluminum (Alq)3) 2, 5-di (1-naphthyl) -1, 3, 4-diazole (BND), 4, 7-diphenyl-1, 10-phenanthroline (Bphen), 1, 2, 4-triazole derivative (such as any one of TAZ), N-aryl benzimidazole (TPBi) or quinoxaline derivative (TPQ) in a doping proportion of 20-60 wt%, wherein the thickness of the electron injection layer is 20-60 nm; as the doping mixture material, preference is given toBphen∶CsN3The doping proportion is preferably 20 wt%, and the thickness of the electron injection layer is preferably 40 nm;
the material of the cathode layer may be any one of silver (Ag), aluminum (Al), silver-magnesium (Ag — Mg) alloy, or gold (Au), preferably Al; the thickness of the cathode layer is 20-200nm, preferably 150 nm;
the white light electroluminescent device of the invention uses the luminescent layer prepared by blue light material and red light and green light phosphorescent material which is relatively stable and has better performance, because the diffusion length of triplet excitons is 100nm and the diffusion length of singlet excitons is 5nm, in order to ensure that the singlet excitons of the fluorescent material can fully carry out Forster energy transfer in the fluorescent layer, and the first and second blocking layers between the blue light luminescent layer and the red and green light phosphorescent luminescent layers can effectively block the diffusion of the singlet excitons of the blue light luminescent layer, the triplet excitons of the blue light material can be diffused into the red and green light phosphorescent luminescent layers to radiate transition luminescence, so that 75 wt% of the triplet excitons in the blue light material can be fully utilized, the blocking layer uses the same material as the main body of the red or green light phosphorescent luminescent layer, namely beryllium complex material, and can effectively avoid energy loss caused by overcoming potential barrier in energy transmission, the main material of the blue light emitting layer is a beryllium complex material with narrow energy gap and good electron transmission performance, so that the energy of the main material can be better transferred to the guest material, and exciton luminescence is formed; the spacer layer is formed by co-doping a hole transport material and an electron transport material, so that the hole transport capability and the electron transport capability can be further improved, the exciton recombination probability is improved, and the luminous efficiency is finally improved.
The preferred embodiments of the present invention will be described in further detail with reference to the accompanying drawings.
Example 1
A white light electroluminescent device has a layered structure comprising: glass/ITO/MoO3/NPB/TAPC/TBADN:BCzVBi/BeBq2/BeBq2:Ir(MDQ)2(acac)/TCTA:TPBi/BeBq2:Ir(ppy)3/BeBq2/TBADN:BCzVBi/TPBi/Bphen/Bphen:CsN3/Al。
Firstly, carrying out photoetching treatment on ITO glass, cutting the ITO glass into a required light-emitting area, then sequentially carrying out ultrasonic treatment for 15min by using detergent, deionized water, acetone, ethanol and isopropanol respectively, removing organic pollutants on the surface of the glass, and then carrying out oxygen plasma treatment on the glass, wherein the treatment time is 5-15min and the power is 50W; sequentially evaporating all organic functional layers on the ITO conductive layer to obtain a white light electroluminescent device; wherein,
the material of the hole injection layer is MoO3The thickness is 5 nm;
the material of the hole transport layer is NPB, and the thickness is 10 nm;
the material of the electron barrier layer is TAPC, and the thickness is 5 nm;
the blue light material of the first blue light emitting layer is BCzVBi, the main material is TBADN, the doping content is 15 wt% (mass percent, the same below), and the thickness of the light emitting layer is 10 nm;
a first barrier layer made of BeBq as the main material2And the thickness of the barrier layer is 2 nm;
the red phosphorescent material of the red phosphorescent light-emitting layer is Ir (MDQ)2(acac) the main material is BeBq2The doping mass percentage is 0.5 wt%, and the thickness of the red phosphorescence luminescent layer is 7 nm;
the spacer layer is 2nm thick and made of TCTA to TPBi in a mass ratio of 1 to 3;
the green phosphorescent material of the green phosphorescent light-emitting layer is Ir (ppy)3The main material is BeBq2The doping proportion is 7 wt%, and the thickness of the green phosphorescent light-emitting layer is 10 nm;
a second barrier layer made of BeBq as the main material2And the thickness of the barrier layer is 2 nm;
the blue light material of the second blue light emitting layer is BCzVBi, the main material is TBADN, the doping percentage is 15 wt%, and the thickness of the light emitting layer is 10 nm;
the hole blocking layer is made of TPBi and has the thickness of 10 nm;
the material of the electron transport layer is Bphen, and the thickness is 40 nm;
the material of the electron injection layer is Bphen: CsN3With a thickness of 0.5nm, Bphen and CsN3The doping mass percentage of (a) is 60 wt%;
the cathode layer is made of Al and has a thickness of 80 nm.
FIG. 2 is a diagram of energy levels of an electron emitter according to example 1; it can be seen from the energy level diagram that after the same material is used for the barrier layer and the host material of the phosphorescent layer, the transmission and transfer of electrons, holes and energy are not hindered by a potential barrier, which is more beneficial to the transmission of energy, and the spacer layer can effectively reduce the triplet concentration of the red-green interface, avoid the quenching of the triplet concentration, thereby improving the luminous efficiency of the device.
FIG. 3 is a graph showing the luminous efficiencies of the white light electroluminescent device of this embodiment and a reference white light electroluminescent device; wherein, curve 1 is the energy efficiency-luminance curve of example 1. Curve 2 is the energy efficiency-luminance curve of the comparative example; structure of reference electroluminescent device: glass/ITO/MoO3/NPB/TAPC/TBADN:BCzVBi/BeBq2:Ir(MDQ)2(acac)/BeBq2:Ir(ppy)3/TBADN:BCzVBi/TPBi/Bphen/Bphen:CsN3/Al。
As can be seen from FIG. 3, at 150cd/cm2When the light emitting efficiency of the device of example 1 is 17lm/W, the light emitting efficiency of the reference device without the spacer layer is 15lm/W, and the light emitting efficiency of example 1 is higher than that of the reference device at other luminance, which shows that, after the barrier layer is added, the fluorescent triplet state is diffused and transits in the phosphorescent layer, and the spacer layer effectively reduces the triplet concentration at the interface, thereby avoiding the occurrence of concentration quenching, and thus, the light emitting efficiency is improved.
Example 2
A white light electroluminescent device has a layered structure comprising: glass/ITO/WO3/TPD/TAPC/TPD:TBPe/BeqQ2/BeqQ2:Ir(MDQ)2(acac)/TBADN:PBD/BeqQ2:Ir(ppy)3/BeqQ2TCTA perylene/AIq3/BND/Cs2CO3/Ag。
Firstly, carrying out photoetching treatment on ITO glass, cutting the ITO glass into a required light-emitting area, then sequentially carrying out ultrasonic treatment for 15min by using detergent, deionized water, acetone, ethanol and isopropanol respectively, removing organic pollutants on the surface of the glass, and then carrying out oxygen plasma treatment on the glass, wherein the treatment time is 10min and the power is 50W; sequentially evaporating all organic functional layers on the ITO conductive layer to obtain a white light electroluminescent device; wherein,
the material of the hole injection layer is WO3The thickness is 10 nm;
the hole transport layer is made of TPD and has the thickness of 5 nm;
the material of the electron barrier layer is TAPC, and the thickness is 20 nm;
the blue light material of the first blue light emitting layer is TBPe, the main material is TPD, the doping mass percentage is 10 wt%, and the thickness of the light emitting layer is 15 nm;
a first barrier layer made of BeqQ as the main material2And the thickness of the barrier layer is 1 nm;
the red phosphorescent material of the red phosphorescent light-emitting layer is Ir (MDQ)2(acac) the main material is BeqQ2The doping mass percentage is 1.5 wt%, and the thickness of the red phosphorescence luminescent layer is 10 nm;
the spacer layer is 10nm thick and made of TBADN and PBD in a mass ratio of 1 to 1;
the green phosphorescent material of the green phosphorescent light-emitting layer is Ir (ppy)3The main material is BeqQ215 wt% of the doping ratio, the green phosphorescenceThe thickness of the luminescent layer is 5 nm;
a second barrier layer made of BeqQ as the main material2And the thickness of the barrier layer is 10 nm;
the blue light material of the second blue light emitting layer is perylene, the main material is TCTA, the doping mass percentage is 5 wt%, and the thickness of the emitting layer is 15 nm;
the hole blocking layer is made of Alq3The thickness is 5 nm;
the electron transport layer is made of BND and has a thickness of 80 nm;
the material of the electron injection layer is Cs2CO3The thickness is 5 nm;
the cathode layer is made of Ag and has a thickness of 20 nm.
Example 3
A white light electroluminescent device has a layered structure comprising: glass/ITO/VOx/TCTA/NPB/TCTA:DPAVBi/BeqQ2/BeqQ2:Ir(piq)2(acac)/CBP:Alq3/BeqQ2:Ir(ppy)2(acac))/BeMQ2/TDAPB:DPAVB/BND/TAZ/CsN3/Ag-Mg。
Firstly, carrying out photoetching treatment on ITO glass, cutting the ITO glass into a required light-emitting area, then sequentially carrying out ultrasonic treatment for 15min by using detergent, deionized water, acetone, ethanol and isopropanol respectively, removing organic pollutants on the surface of the glass, and then carrying out oxygen plasma treatment on the glass, wherein the treatment time is 15min and the power is 50W; sequentially evaporating all organic functional layers on the ITO conductive layer to obtain a white light electroluminescent device; wherein,
the material of the hole injection layer is VOxThe thickness is 40 nm;
the hole transport layer is made of TCTA and has the thickness of 80 nm;
the material of the electron blocking layer is NPB, and the thickness is 60 nm;
the blue light material of the first blue light emitting layer is DPAVBi, the main material is TCTA, the doping quality percentage is 20 wt%, and the thickness of the light emitting layer is 5 nm;
a first barrier layer made of BeqQ as the main material2And the thickness of the barrier layer is 2 nm;
the red phosphorescent material of the red phosphorescent light-emitting layer is Ir (piq)2(acac) the main material is BeqQ2The doping mass percentage is 5 wt%, and the thickness of the red phosphorescent light-emitting layer is 10 nm;
spacer layer with thickness of 1nm and material of CBP: Alq3The mass ratio is 1: 2;
the green phosphorescent material of the green phosphorescent light-emitting layer is Ir (ppy)2(acac)) the host material is BeqQ2The doping proportion is 5 wt%, and the thickness of the green phosphorescent light-emitting layer is 15 nm;
a second barrier layer made of BeMQ as the main material2And the thickness of the barrier layer is 1 nm;
the blue light material of the second blue light emitting layer is DPAVB, the main material is TDAPB, the doping quality percentage is 20 wt%, and the thickness of the light emitting layer is 5 nm;
the hole blocking layer is made of BND and has the thickness of 3 nm;
the material of the electron transport layer is TAZ, and the thickness is 80 nm;
the material of the electron injection layer is CsN3The thickness is 5 nm;
the cathode layer is made of Ag-Mg and has a thickness of 200 nm.
Example 4
A white light electroluminescent device has a layered structure comprising: glass/ITO/V2O5/TDAPB/CuPc/CBP:BDAVBi/BePrQ2/BePrQ2:Ir(piq)3/TDAPB:Bphen/BePrQ2:Ir(ppy)3/BePrQ2/CuPc:BCzVBi/TDAPB/TPBI/Bphen:CsN3/Al。
Firstly, carrying out photoetching treatment on ITO glass, cutting the ITO glass into a required light-emitting area, then sequentially carrying out ultrasonic treatment for 15min by using detergent, deionized water, acetone, ethanol and isopropanol respectively, removing organic pollutants on the surface of the glass, and then carrying out oxygen plasma treatment on the glass, wherein the treatment time is 5-15min and the power is 50W; sequentially evaporating all organic functional layers on the ITO conductive layer to obtain a white light electroluminescent device; wherein,
the material of the hole injection layer is V2O5The thickness is 30 nm;
the hole transport layer is made of TDAPB and has the thickness of 20 nm;
the material of the electron blocking layer is CuPc, and the thickness is 5 nm;
the blue light material of the first blue light emitting layer is BDAVBi, the main material is CBP, the doping weight percentage is 8 wt%, and the thickness of the light emitting layer is 12 nm;
a first barrier layer made of BePrQ as the main material2And the thickness of the barrier layer is 8 nm;
the red phosphorescent material of the red phosphorescent light-emitting layer is Ir (piq)3The main material is BePrQ2The doping mass percentage is 2.5 wt%, and the thickness of the red phosphorescent light-emitting layer is 13 nm;
the thickness of the spacing layer is 2nm, the materials are TDAPB and Bphen, and the mass ratio is 1: 4;
the green phosphorescent material of the green phosphorescent light-emitting layer is Ir (ppy)3The main material is BePrQ2The doping proportion is 8 wt%, and the thickness of the green phosphorescent light-emitting layer is 14 nm;
a second barrier layer made of BePrQ as the main material2And the thickness of the barrier layer is 5 nm;
the blue light material of the second blue light emitting layer is BCzVBi, the main body material is CuPc, the doping weight percentage is 6 wt%, and the thickness of the light emitting layer is 12 nm;
the hole blocking layer is made of TDAPB and has the thickness of 60 nm;
the material of the electron transport layer is TPBI, and the thickness is 20 nm;
the material of the electron injection layer is LiF, and the thickness is 2.5 nm;
the cathode layer is made of Au and has a thickness of 50 nm.
Example 5
A white light electroluminescent device has a layered structure comprising: glass/ITO/MoO3/TAPC/TAPC/NPB:BDAVBi/BeBq2/BeBq2:Ir(MDQ)2(acac)/TDAPB:TPBi/BeBq2:Ir(ppy)3/BeBq2/TBADN:BCzVBi/TPQ/Bphen/CsF/Al。
Firstly, carrying out photoetching treatment on ITO glass, cutting the ITO glass into a required light-emitting area, then sequentially carrying out ultrasonic treatment for 15min by using detergent, deionized water, acetone, ethanol and isopropanol respectively, removing organic pollutants on the surface of the glass, and then carrying out oxygen plasma treatment on the glass, wherein the treatment time is 7min and the power is 50W; sequentially evaporating all organic functional layers on the ITO conductive layer to obtain a white light electroluminescent device; wherein,
the material of the hole injection layer is MoO3The thickness is 30 nm;
the hole transport layer is made of TAPC with the thickness of 70 nm;
the material of the electron barrier layer is TAPC, and the thickness is 50 nm;
the blue light material of the first blue light emitting layer is BDAVBi, the main material is NPB, the doping mass percentage is 17 wt%, and the thickness of the light emitting layer is 11 nm;
a first barrier layer made of BeBq as the main material2And the thickness of the barrier layer is 4 nm;
the red phosphorescent material of the red phosphorescent light-emitting layer is Ir (MDQ)2(acac) the main material is BeBq2The doping mass percentage is 3.5 wt%, and the thickness of the red phosphorescence luminescent layer is 6 nm;
a spacing layer with the thickness of 2nm and made of TDAPB and TPBi in a mass ratio of 1: 5;
the green phosphorescent material of the green phosphorescent light-emitting layer is Ir (ppy)3The main material is BeBq2The doping proportion is 9 wt%, and the thickness of the green phosphorescent light-emitting layer is 4 nm;
a second barrier layer made of BeBq as the main material2And the thickness of the barrier layer is 7 nm;
the blue light material of the second blue light emitting layer is BCzVBi, the main material is TBADN, the doping percentage is 20 wt%, and the thickness of the light emitting layer is 14 nm;
the hole blocking layer is made of TPQ and is 4nm thick;
the material of the electron transport layer is Bphen, and the thickness is 70 nm;
the material of the electron injection layer is CsF, and the thickness is 30 nm;
the cathode layer is made of Al and has a thickness of 180 nm.
Example 6
A white light electroluminescent device has a layered structure comprising: glass/ITO/V2O5/TPD/TAPC/TBADN:BCzVBi/BeMQ2/BeMQ2:Ir(piq)3/TBADN:TAZ/BeMQ2:Ir(ppy)3/BeMQ2/TBADN:BCzVBi/Alq3/BND/CaF2/Au。
Firstly, carrying out photoetching treatment on ITO glass, cutting the ITO glass into a required light-emitting area, then sequentially carrying out ultrasonic treatment for 15min by using detergent, deionized water, acetone, ethanol and isopropanol respectively, removing organic pollutants on the surface of the glass, and then carrying out oxygen plasma treatment on the glass for 8min with the power of 50W; sequentially evaporating all organic functional layers on the ITO conductive layer to obtain a white light electroluminescent device; wherein,
the material of the hole injection layer is V2O5The thickness is 25 nm;
the hole transport layer is made of TPD and has the thickness of 55 nm;
the material of the electron barrier layer is TAPC, and the thickness is 15 nm;
the blue light material of the first blue light emitting layer is BCzVBi, the main material is TBADN, the doping percentage is 18 wt%, and the thickness of the light emitting layer is 8 nm;
a first barrier layer made of BeMQ as the main material2And the thickness of the barrier layer is 3 nm;
the red phosphorescent material of the red phosphorescent light-emitting layer is Ir (piq)3The host material is BeMQ2The doping mass percentage is 4.5 wt%, and the thickness of the red phosphorescence luminescent layer is 3 nm;
a spacer layer with the thickness of 2nm and made of TBADN to TAZ with the mass ratio of 1 to 3;
the green phosphorescent material of the green phosphorescent light-emitting layer is Ir (ppy)3The host material is BeMQ2The doping proportion is 9 wt%, and the thickness of the green phosphorescent light-emitting layer is 6 nm;
a second barrier layer made of BeMQ as the main material2And the thickness of the barrier layer is 8 nm;
the blue light material of the second blue light emitting layer is BCzVBi, the main material is TBADN, the doping weight percentage is 16 wt%, and the thickness of the light emitting layer is 6 nm;
the hole blocking layer is made of Alq3The thickness is 7 nm;
the electron transport layer is made of BND and has a thickness of 50 nm;
the material of the electron injection layer is CaF2The thickness is 50 nm;
the cathode layer is made of Au and has a thickness of 120 nm.
Example 7
A white light electroluminescent device has a layered structure comprising:
glass/ITO/MoO3/TDAPB/TAPC/TBADN:TBPe/BeqQ2/BeqQ2:Ir(MDQ)2(acac)/TCTA:TPBi/BeqQ2:Ir(ppy)3/BeqQ2/TBADN:TBPe/Bphen/Bphen/MgF2/Al。
Firstly, carrying out photoetching treatment on ITO glass, cutting the ITO glass into a required light-emitting area, then sequentially carrying out ultrasonic treatment for 15min by using detergent, deionized water, acetone, ethanol and isopropanol respectively, removing organic pollutants on the surface of the glass, and then carrying out oxygen plasma treatment on the glass for 9min with the power of 50W; sequentially evaporating all organic functional layers on the ITO conductive layer to obtain a white light electroluminescent device; wherein,
the material of the hole injection layer is MoO3The thickness is 35 nm;
the hole transport layer is made of TDAPB and has the thickness of 40 nm;
the material of the electron barrier layer is TAPC, and the thickness is 35 nm;
the blue light material of the first blue light emitting layer is TBPe, the main material is TBADN, the doping mass percentage is 10 wt%, and the thickness of the light emitting layer is 5 nm;
a first barrier layer made of BeqQ as the main material2And the thickness of the barrier layer is 6 nm;
the red phosphorescent material of the red phosphorescent light-emitting layer is Ir (MDQ)2(acac) the main material is BeqQ2The doping mass percentage is 1.5 wt%, and the thickness of the red phosphorescence luminescent layer is 8 nm;
the spacer layer is 8nm thick and made of TCTA to TPBi in a mass ratio of 1 to 1;
the green phosphorescent material of the green phosphorescent light-emitting layer is Ir (ppy)3The main material is BeqQ2The doping ratio is 7wt% of the green phosphorescent light-emitting layer is 10 nm;
a second barrier layer made of BeqQ as the main material2And the thickness of the barrier layer is 2 nm;
the blue light material of the second blue light emitting layer is TBPe, the main material is TBADN, the doping mass percentage is 10 wt%, and the thickness of the light emitting layer is 5 nm;
the hole blocking layer is made of Bphen and has the thickness of 6 nm;
the material of the electron transport layer is Bphen, and the thickness is 30 nm;
the material of the electron injection layer is MgF2The thickness is 30 nm;
the cathode layer is made of Al and has a thickness of 40 nm.
Example 8
A white light electroluminescent device has a layered structure comprising: glass/ITO/WO3/CuPc/TAPC/TBADN:BCzVBi/BeQ2/BeQ2:Ir(MDQ)2(acac)/CuPc:TPQ/BeQ2:Ir(ppy)3/BeQ2/TBADN:BCzVBi/TPBi/Bphen/NaF/Al。
Firstly, carrying out photoetching treatment on ITO glass, cutting the ITO glass into a required light-emitting area, then sequentially carrying out ultrasonic treatment for 15min by using detergent, deionized water, acetone, ethanol and isopropanol respectively, removing organic pollutants on the surface of the glass, and then carrying out oxygen plasma treatment on the glass, wherein the treatment time is 14min and the power is 50W; sequentially evaporating all organic functional layers on the ITO conductive layer to obtain a white light electroluminescent device; wherein,
the material of the hole injection layer is WO3The thickness is 25 nm;
the hole transport layer is made of CuPc and has the thickness of 15 nm;
the material of the electron blocking layer is TAPC, and the thickness is 65 nm;
the blue light material of the first blue light emitting layer is BCzVBi, the main material is TBADN, the doping weight percentage is 15 wt%, and the thickness of the light emitting layer is 2 nm;
a first barrier layer comprising BeQ as the main material2And the thickness of the barrier layer is 8 nm;
the red phosphorescent material of the red phosphorescent light-emitting layer is Ir (MDQ)2(acac) body material BeQ2The doping mass percentage is 3.5 wt%, and the thickness of the red phosphorescence luminescent layer is 2 nm;
the thickness of the spacing layer is 8nm, the materials are CuPc: TPQ, and the mass ratio is 1: 3;
the green phosphorescent material of the green phosphorescent light-emitting layer is Ir (ppy)3The main material is BeQ2The doping proportion is 8 wt%, and the thickness of the green phosphorescent light-emitting layer is 11 nm;
a second barrier layer made of BeQ as the main material2And the thickness of the barrier layer is 4 nm;
the blue light material of the second blue light emitting layer is BCzVBi, the main material is TBADN, the doping percentage is 10 wt%, and the thickness of the light emitting layer is 14 nm;
the hole blocking layer is made of TPBi and has the thickness of 6 nm;
the electron transport layer is made of Bphen and has the thickness of 80 nm;
the material of the electron injection layer is NaF, and the thickness is 60 nm;
the cathode layer is made of Al and has a thickness of 170 nm.
Example 9
A white light electroluminescent device has a layered structure comprising: glass/ITO/MoO3/NPB/TAPC/TBADN:BCzVBi/BeBq2/BeBq2:Ir(MDQ)2(acac)/TCTA:TPBi/BeBq2:Ir(ppy)3/BeBq2/TBADN:BCzVBi/TPBi/Bphen/Bphen:CsN3/Al。
Firstly, carrying out photoetching treatment on ITO glass, cutting the ITO glass into a required light-emitting area, then sequentially carrying out ultrasonic treatment for 15min by using detergent, deionized water, acetone, ethanol and isopropanol respectively, removing organic pollutants on the surface of the glass, and then carrying out oxygen plasma treatment on the glass, wherein the treatment time is 13min and the power is 50W; sequentially evaporating all organic functional layers on the ITO conductive layer to obtain a white light electroluminescent device; wherein,
the material of the hole injection layer is MoO3The thickness is 5 nm;
the material of the hole transport layer is NPB, and the thickness is 40 nm;
the material of the electron barrier layer is TAPC, and the thickness is 5 nm;
the blue light material of the first blue light emitting layer is BCzVBi, the main material is TBADN, the doping percentage is 15 wt%, and the thickness of the light emitting layer is 10 nm;
a first barrier layer made of BeBq as the main material2And the thickness of the barrier layer is 2 nm;
the red phosphorescent material of the red phosphorescent light-emitting layer is Ir (MDQ)2(acac) the main material is BeBq2The doping mass percentage is 0.5 wt%, and the thickness of the red phosphorescence luminescent layer is 7 nm;
the spacer layer is 2nm thick and made of TCTA to TPBi in a mass ratio of 1 to 3;
the green phosphorescent material of the green phosphorescent light-emitting layer is Ir (ppy)3The main material is BeBq2The doping proportion is 7 wt%, and the thickness of the green phosphorescent light-emitting layer is 10 nm;
a second barrier layer made of BeBq as the main material2And the thickness of the barrier layer is 2 nm;
the blue light material of the second blue light emitting layer is BCzVBi, the main material is TBADN, the doping percentage is 15 wt%, and the thickness of the light emitting layer is 10 nm;
the hole blocking layer is made of TPBi and has the thickness of 5 nm;
the material of the electron transport layer is Bphen, and the thickness is 60 nm;
the material of the electron injection layer is Bphen: CsN3With a thickness of 40nm, Bphen and CsN3The doping mass percentage of (2) is 20 wt%;
the cathode layer is made of Al and has a thickness of 150 nm.
Example 10
A white light electroluminescent device has a layered structure comprising: glass/ITO/MoO3/NPB/TAPC/TBADN:BCzVBi/BeBq2/BeBq2:Ir(MDQ)2(acac)/TCTA:TPBi/BeBq2:Ir(ppy)3/BeBq2/TBADN:BCzVBi/TPBi/Bphen/TPBi:CaF2/Al。
Firstly, carrying out photoetching treatment on ITO glass, cutting the ITO glass into a required light-emitting area, then sequentially carrying out ultrasonic treatment for 15min by using detergent, deionized water, acetone, ethanol and isopropanol respectively, removing organic pollutants on the surface of the glass, and then carrying out oxygen plasma treatment on the glass, wherein the treatment time is 15min and the power is 50W; sequentially evaporating all organic functional layers on the ITO conductive layer to obtain a white light electroluminescent device; wherein,
the material of the hole injection layer is MoO3The thickness is 5 nm;
the material of the hole transport layer is NPB, and the thickness is 10 nm;
the material of the electron barrier layer is TAPC, and the thickness is 5 nm;
the blue light material of the first blue light emitting layer is BCzVBi, the main material is TBADN, the doping percentage is 15 wt%, and the thickness of the light emitting layer is 10 nm;
a first barrier layer made of BeBq as the main material2And the thickness of the barrier layer is 2 nm;
the red phosphorescent material of the red phosphorescent light-emitting layer is Ir (MDQ)2(acac) as the host materialBeBq2The doping mass percentage is 0.5 wt%, and the thickness of the red phosphorescence luminescent layer is 7 nm;
the spacer layer is 2nm thick and made of TCTA to TPBi in a mass ratio of 1 to 3;
the green phosphorescent material of the green phosphorescent light-emitting layer is Ir (ppy)3The main material is BeBq2The doping proportion is 7 wt%, and the thickness of the green phosphorescent light-emitting layer is 10 nm;
a second barrier layer made of BeBq as the main material2And the thickness of the barrier layer is 2 nm;
the blue light material of the second blue light emitting layer is BCzVBi, the main material is TBADN, the doping percentage is 15 wt%, and the thickness of the light emitting layer is 10 nm;
the hole blocking layer is made of TPBi and has the thickness of 10 nm;
the material of the electron transport layer is Bphen, and the thickness is 40 nm;
the material of the electron injection layer is TPBi: CaF220nm thick, TPBi and CaF2The doping mass percentage of (2) is 30 wt%;
the cathode layer is made of Al and has a thickness of 90 nm.
Example 11
A white light electroluminescent device has a layered structure comprising: glass/ITO/MoO3/NPB/TAPC/TBADN:BCzVBi/BeBq2/BeBq2:Ir(MDQ)2(acac)/TCTA:TPBi/BeBq2:Ir(ppy)3/BeBq2/TBADN:BCzVBi/TPBi/Bphen/TPQ:NaF/Al。
Firstly, carrying out photoetching treatment on ITO glass, cutting the ITO glass into a required light-emitting area, then sequentially carrying out ultrasonic treatment for 15min by using detergent, deionized water, acetone, ethanol and isopropanol respectively, removing organic pollutants on the surface of the glass, and then carrying out oxygen plasma treatment on the glass, wherein the treatment time is 10min and the power is 50W; sequentially evaporating all organic functional layers on the ITO conductive layer to obtain a white light electroluminescent device; wherein,
the material of the hole injection layer is MoO3The thickness is 5 nm;
the material of the hole transport layer is NPB, and the thickness is 10 nm;
the material of the electron barrier layer is TAPC, and the thickness is 5 nm;
the blue light material of the first blue light emitting layer is BCzVBi, the main material is TBADN, the doping percentage is 15 wt%, and the thickness of the light emitting layer is 10 nm;
a first barrier layer made of BeBq as the main material2And the thickness of the barrier layer is 2 nm;
the red phosphorescent material of the red phosphorescent light-emitting layer is Ir (MDQ)2(acac) the main material is BeBq2The doping mass percentage is 0.5 wt%, and the thickness of the red phosphorescence luminescent layer is 7 nm;
the spacer layer is 2nm thick and made of TCTA to TPBi in a mass ratio of 1 to 3;
the green phosphorescent material of the green phosphorescent light-emitting layer is Ir (ppy)3The main material is BeBq2The doping proportion is 7 wt%, and the thickness of the green phosphorescent light-emitting layer is 10 nm;
a second barrier layer made of BeBq as the main material2And the thickness of the barrier layer is 2 nm;
the blue light material of the second blue light emitting layer is BCzVBi, the main material is TBADN, the doping percentage is 15 wt%, and the thickness of the light emitting layer is 10 nm;
the hole blocking layer is made of TPBi and has the thickness of 10 nm;
the material of the electron transport layer is Bphen, and the thickness is 40 nm;
the material of the electron injection layer is TPQ and NaF, the thickness is 20nm, and the doping percentage of the TPQ and the NaF is 40 wt%;
the cathode layer is made of Al and has a thickness of 40 nm.
Example 12
A white light electroluminescent device has a layered structure comprising: glass/ITO/MoO3/NPB/TAPC/TBADN:BCzVBi/BeBq2/BeBq2:Ir(MDQ)2(acac)/TCTA:TPBi/BeBq2:Ir(ppy)3/BeBq2/TBADN:BCzVBi/TPBi/Bphen/TPQ:CsF/Al。
Firstly, carrying out photoetching treatment on ITO glass, cutting the ITO glass into a required light-emitting area, then sequentially carrying out ultrasonic treatment for 15min by using detergent, deionized water, acetone, ethanol and isopropanol respectively, removing organic pollutants on the surface of the glass, and then carrying out oxygen plasma treatment on the glass for 8min with the power of 50W; sequentially evaporating all organic functional layers on the ITO conductive layer to obtain a white light electroluminescent device; wherein,
the material of the hole injection layer is MoO3The thickness is 5 nm;
the material of the hole transport layer is NPB, and the thickness is 10 nm;
the material of the electron barrier layer is TAPC, and the thickness is 5 nm;
the blue light material of the first blue light emitting layer is BCzVBi, the main material is TBADN, the doping percentage is 15 wt%, and the thickness of the light emitting layer is 10 nm;
a first barrier layer made of BeBq as the main material2And the thickness of the barrier layer is 2 nm;
the red phosphorescent material of the red phosphorescent light-emitting layer is Ir (MDQ)2(acac) the main material is BeBq2The doping mass percentage is 0.5 wt%, and the thickness of the red phosphorescence luminescent layer is 7 nm;
the spacer layer is 2nm thick and made of TCTA to TPBi in a mass ratio of 1 to 3;
the green phosphorescent material of the green phosphorescent light-emitting layer is Ir (ppy)3The main material isBeBq2The doping proportion is 7 wt%, and the thickness of the green phosphorescent light-emitting layer is 10 nm;
a second barrier layer made of BeBq as the main material2And the thickness of the barrier layer is 2 nm;
the blue light material of the second blue light emitting layer is BCzVBi, the main material is TBADN, the doping percentage is 15 wt%, and the thickness of the light emitting layer is 10 nm;
the hole blocking layer is made of TPBi and has the thickness of 10 nm;
the material of the electron transport layer is Bphen, and the thickness is 40 nm;
the material of the electron injection layer is TPQ and CsF, the thickness is 45nm, and the doping percentage of the TPQ and the CsF is 50 wt%;
the cathode layer is made of Al and has a thickness of 180 nm.
Example 13
A white light electroluminescent device has a layered structure comprising: glass/ITO/MoO3/NPB/TAPC/TBADN:BCzVBi/BeBq2/BeBq2:Ir(MDQ)2(acac)/TCTA:TPBi/BeBq2:Ir(ppy)3/BeBq2/TBADN:BCzVBi/TPBi/Bphen/PBD:MgF2/Al。
Firstly, carrying out photoetching treatment on ITO glass, cutting the ITO glass into a required light-emitting area, then sequentially carrying out ultrasonic treatment for 15min by using detergent, deionized water, acetone, ethanol and isopropanol respectively, removing organic pollutants on the surface of the glass, and then carrying out oxygen plasma treatment on the glass for 9min with the power of 50W; sequentially evaporating all organic functional layers on the ITO conductive layer to obtain a white light electroluminescent device; wherein,
the material of the hole injection layer is MoO3The thickness is 5 nm;
the material of the hole transport layer is NPB, and the thickness is 10 nm;
the material of the electron barrier layer is TAPC, and the thickness is 5 nm;
the blue light material of the first blue light emitting layer is BCzVBi, the main material is TBADN, the doping percentage is 15 wt%, and the thickness of the light emitting layer is 10 nm;
a first barrier layer made of BeBq as the main material2And the thickness of the barrier layer is 2 nm;
the red phosphorescent material of the red phosphorescent light-emitting layer is Ir (MDQ)2(acac) the main material is BeBq2The doping mass percentage is 0.5 wt%, and the thickness of the red phosphorescence luminescent layer is 7 nm;
the spacer layer is 2nm thick and made of TCTA to TPBi in a mass ratio of 1 to 3;
the green phosphorescent material of the green phosphorescent light-emitting layer is Ir (ppy)3The main material is BeBq2The doping proportion is 7 wt%, and the thickness of the green phosphorescent light-emitting layer is 10 nm;
a second barrier layer made of BeBq as the main material2And the thickness of the barrier layer is 2 nm;
the blue light material of the second blue light emitting layer is BCzVBi, the main material is TBADN, the doping percentage is 15 wt%, and the thickness of the light emitting layer is 10 nm;
the hole blocking layer is made of TPBi and has the thickness of 10 nm;
the material of the electron transport layer is Bphen, and the thickness is 40 nm;
the electron injection layer is made of PBD (poly-p-phenylene benzobisoxazole): MgF2Thickness of 35nm, PBD and MgF2The doping quality percentage of (A) is 40 wt%
The cathode layer is made of Al and has a thickness of 50 nm.
Example 14
A white light electroluminescent device has a layered structure comprising: glass/ITO/MoO3/NPB/TAPC/TBADN:BCzVBi/BeBq2/BeBq2:Ir(MDQ)2(acac)/TCTA:TPBi/BeBq2:Ir(ppy)3/BeBq2/TBADN:BCzVBi/TPBi/Bphen/BND:Cs2CO3/Al。
Firstly, carrying out photoetching treatment on ITO glass, cutting the ITO glass into a required light-emitting area, then sequentially carrying out ultrasonic treatment for 15min by using detergent, deionized water, acetone, ethanol and isopropanol respectively, removing organic pollutants on the surface of the glass, and then carrying out oxygen plasma treatment on the glass, wherein the treatment time is 10min and the power is 50W; sequentially evaporating all organic functional layers on the ITO conductive layer to obtain a white light electroluminescent device; wherein,
the material of the hole injection layer is MoO3The thickness is 5 nm;
the material of the hole transport layer is NPB, and the thickness is 10 nm;
the material of the electron barrier layer is TAPC, and the thickness is 5 nm;
the blue light material of the first blue light emitting layer is BCzVBi, the main material is TBADN, the doping percentage is 15 wt%, and the thickness of the light emitting layer is 10 nm;
a first barrier layer made of BeBq as the main material2And the thickness of the barrier layer is 2 nm;
the red phosphorescent material of the red phosphorescent light-emitting layer is Ir (MDQ)2(acac) the main material is BeBq2The doping mass percentage is 0.5 wt%, and the thickness of the red phosphorescence luminescent layer is 7 nm;
the spacer layer is 2nm thick and made of TCTA to TPBi in a mass ratio of 1 to 3;
the green phosphorescent material of the green phosphorescent light-emitting layer is Ir (ppy)3The main material is BeBq2The doping proportion is 7 wt%, and the thickness of the green phosphorescent light-emitting layer is 10 nm;
a second barrier layer made of BeBq as the main material2And the thickness of the barrier layer is 2 nm;
the blue light material of the second blue light emitting layer is BCzVBi, the main material is TBADN, the doping percentage is 15 wt%, and the thickness of the light emitting layer is 10 nm;
the hole blocking layer is made of TPBi and has the thickness of 10 nm;
the material of the electron transport layer is Bphen, and the thickness is 40 nm;
the material of the electron injection layer is BND: Cs2CO3A thickness of 40nm, BND and Cs2CO3The doping quality percentage of (B) is 35 wt%
The cathode layer is made of Al and has a thickness of 160 nm.
Example 15
A white light electroluminescent device has a layered structure comprising: glass/ITO/MoO3/NPB/TAPC/TBADN:BCzVBi/BeBq2/BeBq2:Ir(MDQ)2(acac)/TCTA:TPBi/BeBq2:Ir(ppy)3/BeBq2/TBADN:BCzVBi/TPBi/Bphen/TAZ:CsN3/Al。
Firstly, carrying out photoetching treatment on ITO glass, cutting the ITO glass into a required light-emitting area, then sequentially carrying out ultrasonic treatment for 15min by using detergent, deionized water, acetone, ethanol and isopropanol respectively, removing organic pollutants on the surface of the glass, and then carrying out oxygen plasma treatment on the glass, wherein the treatment time is 10min and the power is 50W; sequentially evaporating all organic functional layers on the ITO conductive layer to obtain a white light electroluminescent device; wherein,
the material of the hole injection layer is MoO3The thickness is 5 nm;
the material of the hole transport layer is NPB, and the thickness is 10 nm;
the material of the electron barrier layer is TAPC, and the thickness is 5 nm;
the blue light material of the first blue light emitting layer is BCzVBi, the main material is TBADN, the doping percentage is 15 wt%, and the thickness of the light emitting layer is 10 nm;
a first barrier layer ofThe main material is BeBq2And the thickness of the barrier layer is 2 nm;
the red phosphorescent material of the red phosphorescent light-emitting layer is Ir (MDQ)2(acac) the main material is BeBq2The doping mass percentage is 0.5 wt%, and the thickness of the red phosphorescence luminescent layer is 7 nm;
the spacer layer is 2nm thick and made of TCTA to TPBi in a mass ratio of 1 to 3;
the green phosphorescent material of the green phosphorescent light-emitting layer is Ir (ppy)3The main material is BeBq2The doping proportion is 7 wt%, and the thickness of the green phosphorescent light-emitting layer is 10 nm;
a second barrier layer made of BeBq as the main material2And the thickness of the barrier layer is 2 nm;
the blue light material of the second blue light emitting layer is BCzVBi, the main material is TBADN, the doping percentage is 15 wt%, and the thickness of the light emitting layer is 10 nm;
the hole blocking layer is made of TPBi and has the thickness of 10 nm;
the material of the electron transport layer is Bphen, and the thickness is 40 nm;
the material of the electron injection layer is TAZ: CsN3The thickness is 50 nm; TAZ and CsN3The doping mass percentage of (a) is 25 wt%;
the cathode layer is made of Al and has a thickness of 100 nm.
It should be understood that the above description is illustrative of the preferred embodiment of the present invention and is not to be construed as limiting the scope of the invention, which is defined by the appended claims.

Claims (10)

1. A white light electroluminescent device is characterized in that the device is of a laminated structure, and the laminated structure sequentially comprises: substrate/conducting layer/hole injection layer/hole transport layer/electron blocking layer/first blue light emitting layer/first blocking layer/red light phosphorescent emitting layer/spacing layer/green light phosphorescent emitting layer/second blocking layer/second blue light emitting layer/hole blocking layer/electron transport layer/electron injection layer/cathode layer;
the first blue light emitting layer and the second blue light emitting layer are both made of a blue light material doped in a hole transport material;
the material of the red-light phosphorescent light-emitting layer is beryllium complex material doped with red-light phosphorescent material;
the green phosphorescent light emitting layer is made of a beryllium complex material doped with a green phosphorescent material.
2. The white light electroluminescent device according to claim 1, wherein the blue light emitting material is any one of perylene, perylene derivative, triphenylamine stilbene derivative, triphenylamine dinaphthylethylene derivative or styrene derivative.
3. The white light electroluminescent device according to claim 1, wherein the material of the spacer layer is composed of a co-doping mixture of the hole transport material and the electron transport material.
4. The white-light electroluminescent device according to claim 1 or 3, wherein the hole-transporting material is any one of 2-butyl-9, 10-bis- (2-naphthyl) anthracene, N '-bis (3-methylphenyl) -N, N' -diphenyl-4, 4 '-biphenyldiamine, 4', 4 "-tris (carbazol-9-yl) triphenylamine, 4 '-bis (9-carbazol) biphenyl, N' - (1-naphthyl) -N, N '-diphenyl-4, 4' -biphenyldiamine, 1, 3, 5-triphenylbenzene, or copper phthalocyanine.
5. The white light electroluminescent device according to claim 4, wherein the electron transport material is any one of 2- (4-biphenyl) -5- (4-tert-butyl) phenyl-1, 3, 4-oxadiazole, 8-hydroxyquinoline aluminum, 2, 5-bis (1-naphthyl) -1, 3, 4-oxadiazole, 4, 7-diphenyl-1, 10-phenanthroline, 1, 2, 4-triazole derivative, N-arylbenzimidazole, or quinoxaline derivative.
6. The white light electroluminescent device according to claim 1, wherein the red phosphorescent material is any one of bis (2-methyl-diphenylquinoxaline) (acetylacetone) iridium, bis (1-phenylisoquinoline) (acetylacetone) iridium, or tris (1-phenyl-isoquinoline) iridium.
7. The white light electroluminescent device according to claim 1, wherein the green phosphorescent material is any one of tris (2-phenylpyridine) iridium, bis (2-phenylpyridine) iridium acetylacetonate, or bis (2-p-phenylpyridine) iridium acetylacetonate.
8. The white light electroluminescent device of claim 1, wherein the first barrier layer and the second barrier layer are both beryllium complex materials.
9. The white-light electroluminescent device according to claim 1 or 8, wherein the beryllium complex material is any one of phenacyl beryllium pyridinium, 10-hydroxybenzoquinoline beryllium, 8-hydroxyquinoline beryllium, 2-methyl-8-hydroxyquinoline beryllium, or 7-propyl-8-hydroxyquinoline beryllium.
10. The white light-emitting electroluminescent device of claim 1, wherein the hole injection layer is made of molybdenum trioxide, tungsten trioxide, VOxOr vanadium pentoxide;
the materials of the hole transport layer and the electron blocking layer are respectively any one of 1, 1-bis [4- [ N, N '-bis (p-tolyl) amino ] phenyl ] cyclohexane, N' -bis (3-methylphenyl) -N, N '-diphenyl-4, 4' -biphenyldiamine, 4 '-tris (carbazol-9-yl) triphenylamine, N' - (1-naphthyl) -N, N '-diphenyl-4, 4' -biphenyldiamine, 1, 3, 5-triphenylbenzene or copper phthalocyanine;
the materials of the electron transport layer and the hole blocking layer are respectively any one of 2- (4-biphenyl) -5- (4-tert-butyl) phenyl-1, 3, 4-oxadiazole, 8-hydroxyquinoline aluminum, 2, 5-di (1-naphthyl) -1, 3, 4-oxadiazole, 4, 7-diphenyl-1, 10-phenanthroline, 1, 2, 4-triazole derivatives, N-aryl benzimidazole or quinoxaline derivatives;
the material of the electron injection layer is Cs2CO3、CsN3、LiF、CsF、CaF2、MgF2Or NaF; and
the cathode layer is made of silver, aluminum, silver-magnesium alloy or gold.
CN2011100811135A 2011-03-31 2011-03-31 White light electroluminescent device Pending CN102738399A (en)

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Application publication date: 20121017