CN102650821A - Method for preparing high-temperature resistant hard photomask - Google Patents
Method for preparing high-temperature resistant hard photomask Download PDFInfo
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- CN102650821A CN102650821A CN2012101616596A CN201210161659A CN102650821A CN 102650821 A CN102650821 A CN 102650821A CN 2012101616596 A CN2012101616596 A CN 2012101616596A CN 201210161659 A CN201210161659 A CN 201210161659A CN 102650821 A CN102650821 A CN 102650821A
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Abstract
The invention belongs to the technical field of micro-electronics and particularly provides a method for preparing a high-temperature resistant hard photomask. The high-temperature resistant hard photomask is made of zinc oxide and is particularly prepared in the way that positive photoresist is used to transfer patterns on a substrate through the traditional photolithography, then a zinc oxide film is deposited under ambient temperature, and after the photoresist and the zinc oxide film thereon are removed, patterns contrary to those of the photoresist are left. On that basis, various high-temperature growing materials can be deposited under high temperature as required; and finally, the zinc oxide and material thereon can be removed by low-concentration acid which can corrode zinc oxide quickly but hardly influences the deposited materials, and the purpose that various pattern deposition material structures are formed on the substrate can be achieved at last.
Description
Technical field
The invention belongs to the microelectronic manufacturing technology field, be specifically related to a kind of high temperature resistant hard mask preparation method.
Background technology
Photoetching technique is the basis of electronics industry as the ic manufacturing technology of microelectric technique core, and the speed of its development and update is that other industries can't be reached.In integrated circuit fabrication process, photoetching is its critical process.Photoresist is coated on semiconductor, conductor and the insulator, and the part that behind exposure imaging, stays shields to bottom, adopts ultra-clean and high pure chemical reagent to carry out etching then, thereby accomplished mask plate patterns is transferred to the figure transfer process on the bottom.The manufacturing of an IC generally need could be accomplished through more than 10 figure transfer processes, and photoresist and etching technique are to realize the key of integrated circuit Micrometer-Nanometer Processing Technology.
Along with microelectric technique further develops, new material, new technology are introduced into the integrated circuit manufacturing in succession, such as the non-volatile ferroelectric memory manufacturing of a new generation, micro mechanical system etc.These new materials much all require film growth under the special technology, particularly hot environment.Traditional lithography mask version is divided into positive photoresist and negative photoresist, but they all are organism, have restricted new construction so to a certain extent, the practical application of new technology.Therefore transition diagram has become an extremely urgent technical matters under hot environment.
It is high that zinc oxide material has fusing point (1975 ℃), very easily removed by watery hydrochloric acid, phosphoric acid,diluted, and in advantages such as temperature (1000 ℃) are stable and cheap, these advantages make zinc paste become a kind of desirable hot environment and use the figure transfer mask.
Summary of the invention
The objective of the invention is to propose a kind of high temperature resistant hard mask preparation method in the limitation of hot environment use to traditional photoresist.
A kind of high temperature resistant hard mask preparation method that the present invention proposes; Be embodied in and on substrate, utilize conventional lithographic techniques to use the positive photoresist transition diagram; Deposit one deck zinc-oxide film under the room temperature then, remove photoresist and on the zinc oxide films rete then stay the figure opposite on the substrate with photoresist.On this basis; Various high growth temperature materials of (below 1000 ℃) deposit as required at high temperature; At last through quick corrosion oxidation zinc but to the dilute concentration acid that institute's deposition materials influence is ignored remove zinc paste and on material, finally be implemented in and form various deposited in pattern material structures on the substrate.Its concrete steps are following:
, on substrate, prepare the certain thickness positive photoresist figure (this figure should be consistent with final preparation figure) of (like 200 nanometers to 5 micron) through photoetching technique;
⑵, residual with the photoresist in the positive photoresist zone of the photolithographic exposure and the removal of developing on the source of oxygen removal substrate in the ion etching machine;
, in deposition apparatus, deposit certain thickness under room temperature on the substrate of band positive photoresist figure (like 50 nanometers to 500 nanometers) zinc oxide films rete obtains print;
, with above-mentioned print immerse on acetone soln and the ultrasonic removal substrate positive photoresist and on the zinc oxide films rete, clean up with absolute ethyl alcohol then, and dry up with nitrogen;
⑸, residual with the photoresist of non-oxide zinc covering place on the source of oxygen removal print substrate in the ion etching machine; Subsequently print in quick anneal oven; Short annealing is 5 minutes to 30 minutes under oxygen atmosphere, 500 ℃ to 1000 ℃ high temperature; Make zinc-oxide film by the amorphous crystal structure that is changed to, the zinc oxide films rete is high temperature resistant hard mask on the substrate at this moment;
, in deposition apparatus, use the hard mask of zinc paste, deposit certain thickness in 200 ℃ to 1000 ℃ temperature environments (like 10 nanometers to 500 nanometers) high growth temperature film;
, with deposit the print of high growth temperature film immerse diluted acid; And sonicated, remove fast the hard mask of zinc paste and on the high growth temperature film, clean up with deionized water then; Dry up with nitrogen at last, promptly accomplish preparation high growth temperature film pattern layer on substrate.
Among the present invention, described substrate is applicable to photoetching technique and anti-500 ℃ of materials to 1000 ℃ of high temperature.
Among the present invention, described high growth temperature membraneous material comprises ferroelectric material or semiconductor materials such as ruthenic acid strontium, ferrous acid bismuth, barium strontium titanate, strontium titanates, barium titanate or lead zirconate titanate;
Among the present invention, the influence of described source of oxygen ion etching reply substrate etching is less than 5 nanometers.
Among the present invention, described deposition apparatus comprises: physical vapor deposition (PVD), chemical vapor deposition (CVD), pulsed laser deposition (PLD) or electron beam evaporation deposition apparatus such as (EB).
Among the present invention, described positive photoresist thickness and zinc paste mask thickness compare at 3:1 between the 10:1.
Among the present invention, described zinc paste mask thickness and high growth temperature film thickness than 1:1 between the 10:1.
Diluted acid of the present invention can be fast corrosion oxidation zinc but to high growth temperature thin film corrosive property acidic materials slowly, and such as watery hydrochloric acid, phosphoric acid,diluted etc., its volumetric concentration generally is not higher than 20%.
The invention has the advantages that breaking through conventional lithography glue can not utilize after the cheap zinc paste mask conversion photoetching glue pattern in the limitation of hot environment use, can and make new construction etc. at hot environment (below 1000 ℃) the various new materials of preparation.
Description of drawings
Fig. 1 utilizes conventional lithography glue to shift square figure, 1 micron of positive photoresist thickness.
Fig. 2 200 Nano zinc oxide films are grown on the positive photoresist figure.
Fig. 3 removes the hard mask of zinc paste behind the positive photoresist.
600 ℃ of growth 100 nanometer ruthenic acid strontium films on the hard mask of Fig. 4 zinc paste.
The square figure of Fig. 5 ruthenic acid strontium film.
Label among the figure: 100 is substrate, and 101 is the positive photoresist figure, and 200 is 200 Nano zinc oxide film layers, and 201 is hollow out figure in the zinc oxide film, and 300 is 100 nanometer ruthenic acid strontium thin layers, and 301 is the square figures of 100 nanometer ruthenic acid strontium films.
Embodiment
Hereinafter combines to be shown in more specifically describes the present invention in the reference implementation example, the present invention provides preferred embodiment, but should not be considered to the embodiment that only limits in this elaboration.
Fig. 1 shows and to utilize conventional lithographic techniques, on substrate, makes the square figure 101 of 1 micron thick by lithography with positive photoresist.Litho pattern should be followed principle: the positive photoresist figure is consistent with final graphics.It is residual in the ion etching machine, to remove the photoresist of non-photoresist covering place on the substrate slightly with source of oxygen afterwards.
On sample shown in Figure 1, use physical vapor deposition (PVD) method deposit at room temperature 200 Nano zinc oxide film layers 200, as shown in Figure 2.Afterwards, print immerses in the acetone soln, puts into ultrasonic machine ultrasonic 5 minutes, positive photoresist figure 101 and on Nano zinc oxide film layer 200 remove, last print immerses in the ethanol solution and cleaned 10 seconds, and dries up with nitrogen.This moment, the print structure was as shown in Figure 3, hollow out figure 201 promptly represent positive photoresist figure 101 and on 200 hollow out figures after removing, the bottom is a substrate.Remove totally in order to ensure positive photoresist figure 101 photoresists, print is removed on the substrate hollow out figure 201 place's photoresists with source of oxygen subsequently slightly in the ion etching machine residual.At last, print (1000 ℃ of oxygen atmosphere, temperature) short annealing 10 minutes in quick anneal oven, thus make zinc-oxide film by the amorphous crystal structure that is changed to.This moment, the zinc oxide films rete with figure was high temperature resistant hard mask.
Utilize the high temperature resistant hard mask of zinc paste, in pulsed laser deposition system (PLD), the ruthenic acid strontium film of deposit one deck 100 nanometers under 600 ℃ of temperature is like Fig. 4.Square figure 301 expressions of nanometer ruthenic acid strontium film 100 nanometer ruthenic acid strontium films directly are deposited on the substrate, and afterwards, print immerses in the phosphoric acid,diluted of volume ratio 15%; Put into ultrasonic machine ultrasonic 2 minutes; Guarantee zinc oxide films rete 200 and on ruthenic acid strontium thin layer 300 all remove, and spend ionized water immediately and clean up print, use nitrogen to dry up; Promptly prepare successful sample, as shown in Figure 5.
Claims (7)
1. high temperature resistant hard mask preparation method is characterized in that concrete steps are following:
, on substrate, prepare the positive photoresist figure that thickness is 200 nanometers to 5 micron through photoetching technique;
⑵, residual with the photoresist of the positive photoresist graphics field of the photolithographic exposure and the removal of developing on the source of oxygen removal substrate in the ion etching machine;
, in deposition apparatus, deposition thickness is the zinc oxide films retes of 50 nanometers to 500 nanometers under room temperature on the substrate of band positive photoresist figure, obtains print;
, with above-mentioned print immerse on acetone soln and the ultrasonic removal substrate positive photoresist and on the zinc oxide films rete, clean up with absolute ethyl alcohol then, and dry up with nitrogen;
⑸, residual with the photoresist of non-oxide zinc covering place on the source of oxygen removal print substrate in the ion etching machine; Subsequently print in quick anneal oven; Under oxygen atmosphere, 500 ℃ to 1000 ℃ high temperature rapid thermal annealings 5 minutes to 30 minutes; Make zinc-oxide film by the amorphous crystal structure that is changed to, the zinc oxide films rete is high temperature resistant hard mask on the substrate at this moment;
, in deposition apparatus, use the hard mask of zinc paste, deposition thickness is the high growth temperature films of 10 nanometers to 500 nanometers in 200 ℃ to 1000 ℃ temperature environments;
, with deposit the print of high growth temperature film immerse diluted acid; And sonicated, remove fast the hard mask of zinc paste and on the high growth temperature film, clean up with deionized water then; Dry up with nitrogen at last, promptly accomplish preparation high growth temperature film pattern layer on substrate.
2. high temperature resistant hard mask preparation method according to claim 1 is characterized in that, described substrate is applicable to photoetching technique and anti-500 ℃ of materials to 1000 ℃ of high temperature.
3. high temperature resistant hard mask preparation method according to claim 1 is characterized in that, described deposition apparatus is physical vapor deposition equipment, chemical vapor deposition device, pulsed laser deposition equipment or electron beam evaporation deposition apparatus.
4. high temperature resistant hard mask preparation method according to claim 1 is characterized in that, described high growth temperature membraneous material is ruthenic acid strontium, ferrous acid bismuth, barium strontium titanate, strontium titanates, barium titanate or lead zirconate-titanate ferroelectric material, or semiconductor material.
5. high temperature resistant hard mask preparation method according to claim 1 is characterized in that, described positive photoresist thickness and zinc paste mask thickness compare at 3:1 between the 10:1.
6. high temperature resistant hard mask preparation method according to claim 1 is characterized in that, described zinc paste mask thickness and high growth temperature film thickness than 1:1 between the 10:1.
7. high temperature resistant hard mask preparation method according to claim 1 is characterized in that, diluted acid watery hydrochloric acid of the present invention or phosphoric acid,diluted, and its volumetric concentration is not higher than 20%.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210161659.6A CN102650821B (en) | 2012-05-23 | 2012-05-23 | Method for preparing high-temperature resistant hard photomask |
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| CN201210161659.6A CN102650821B (en) | 2012-05-23 | 2012-05-23 | Method for preparing high-temperature resistant hard photomask |
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| CN102650821A true CN102650821A (en) | 2012-08-29 |
| CN102650821B CN102650821B (en) | 2014-01-08 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113725072A (en) * | 2021-08-26 | 2021-11-30 | 长江存储科技有限责任公司 | Manufacturing method of hard mask and manufacturing method of semiconductor device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6617215B1 (en) * | 2002-03-27 | 2003-09-09 | Advanced Micro Devices, Inc. | Memory wordline hard mask |
| JP2006047539A (en) * | 2004-08-03 | 2006-02-16 | Toppan Printing Co Ltd | Photomask and its manufacturing method |
| CN1740909A (en) * | 2005-09-26 | 2006-03-01 | 广辉电子股份有限公司 | Optical mask and producing method thereof |
| JP2008015098A (en) * | 2006-07-04 | 2008-01-24 | Japan Science & Technology Agency | Photomask, exposure device and method |
| CN101419400A (en) * | 2007-10-24 | 2009-04-29 | 中国科学院微电子研究所 | Dry method etching method by chrome metal mask |
| WO2011027972A2 (en) * | 2009-09-02 | 2011-03-10 | 위아코퍼레이션 주식회사 | Laser-reflective mask and method for manufacturing same |
-
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6617215B1 (en) * | 2002-03-27 | 2003-09-09 | Advanced Micro Devices, Inc. | Memory wordline hard mask |
| JP2006047539A (en) * | 2004-08-03 | 2006-02-16 | Toppan Printing Co Ltd | Photomask and its manufacturing method |
| CN1740909A (en) * | 2005-09-26 | 2006-03-01 | 广辉电子股份有限公司 | Optical mask and producing method thereof |
| JP2008015098A (en) * | 2006-07-04 | 2008-01-24 | Japan Science & Technology Agency | Photomask, exposure device and method |
| CN101419400A (en) * | 2007-10-24 | 2009-04-29 | 中国科学院微电子研究所 | Dry method etching method by chrome metal mask |
| WO2011027972A2 (en) * | 2009-09-02 | 2011-03-10 | 위아코퍼레이션 주식회사 | Laser-reflective mask and method for manufacturing same |
Non-Patent Citations (3)
| Title |
|---|
| P.H.CHEN ET AL.: "GaN- based light- emitting diodes with pillar structures around the mesa region", 《IEEE JOURNAL OF QUANTUM ELECTRONICS》 * |
| TAKUMI IKENOUE ET AL.: "Fabrication of PEDOT PSSZnMgO Schottky- type ultraviolet sensors on glass substrates with solution- based mist deposition technique and hard- mask patterning", 《PHYS.STATUS SOLIDI C 8》 * |
| WEI-CHIH LAI ET AL.: "GaN-based LEDs with mesh ITO p-contact and nanopillars", 《IEEE PHOTONICS TECHNOLOGY LETTERS》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113725072A (en) * | 2021-08-26 | 2021-11-30 | 长江存储科技有限责任公司 | Manufacturing method of hard mask and manufacturing method of semiconductor device |
| CN113725072B (en) * | 2021-08-26 | 2024-04-02 | 长江存储科技有限责任公司 | Method for manufacturing hard mask and method for manufacturing semiconductor device |
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