CN102646775A - Light emitting diode element and manufacturing method thereof - Google Patents
Light emitting diode element and manufacturing method thereof Download PDFInfo
- Publication number
- CN102646775A CN102646775A CN2011101350386A CN201110135038A CN102646775A CN 102646775 A CN102646775 A CN 102646775A CN 2011101350386 A CN2011101350386 A CN 2011101350386A CN 201110135038 A CN201110135038 A CN 201110135038A CN 102646775 A CN102646775 A CN 102646775A
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- light
- groove
- metal
- backlight unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 230
- 239000002184 metal Substances 0.000 claims abstract description 230
- 239000000084 colloidal system Substances 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 claims description 172
- 238000001816 cooling Methods 0.000 claims description 88
- 239000004831 Hot glue Substances 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 15
- 238000012856 packing Methods 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000003754 machining Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000003960 organic solvent Substances 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229920000098 polyolefin Polymers 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229920001169 thermoplastic Polymers 0.000 claims description 4
- 239000004416 thermosoftening plastic Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000004952 Polyamide Substances 0.000 claims description 3
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 238000003698 laser cutting Methods 0.000 claims description 3
- 229920002521 macromolecule Polymers 0.000 claims description 3
- 229920002647 polyamide Polymers 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 abstract description 17
- 238000004806 packaging method and process Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 description 11
- 230000008901 benefit Effects 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 10
- 239000002390 adhesive tape Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000000605 extraction Methods 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000012797 qualification Methods 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000006071 cream Substances 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 229920006375 polyphtalamide Polymers 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 241000218202 Coptis Species 0.000 description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 description 2
- 239000004954 Polyphthalamide Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910001651 emery Inorganic materials 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000009183 running Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a light-emitting diode element and a manufacturing method thereof. The light emitting diode element comprises a metal heat dissipation seat, a bracket, a light emitting diode chip and a packaging colloid. The metal heat sink includes an arc-shaped protrusion ring. The bracket is arranged on the metal heat dissipation seat outside the arc-shaped protruding ring. The bracket comprises at least two conductive metal layers which are respectively positioned at two sides of the arc-shaped protrusion ring. The light emitting diode chip is arranged on the metal heat dissipation seat in the arc-shaped protruding ring. The light emitting diode chip is provided with a first electrode and a second electrode which have different electrical properties, and the first electrode and the second electrode are respectively electrically connected with the conductive metal layer. The packaging colloid wraps the light-emitting diode chip, the arc-shaped protrusion ring and a part of each conductive metal layer.
Description
Technical field
The present invention relates to a kind of light-emitting component, and particularly relate to a kind of light-emitting diode (LED) element and preparation method thereof.
Background technology
Be applied in along with light-emitting diode on the product of high brightness demands such as illumination and auto bulb, the operand power of light-emitting diode chip for backlight unit also must increase thereupon.Yet, because in the input electric power of light-emitting diode, nearly 80% transfers heat energy to, and only has 20% to transfer luminous energy to.Therefore, along with the increase of the heat that light-emitting diode chip for backlight unit produced, the radiating requirements of light-emitting diode also improves thereupon day by day.
The heat dissipation technology of present light-emitting diode chip for backlight unit on canned program mainly contains following several types.A kind of heat dissipation technology is to utilize elargol or tin cream, and light-emitting diode chip for backlight unit is fixed on the packaging body with heat dissipation design.This technological advantage is through the packaging body of this tool heat dissipation design, can improve the radiating efficiency of light-emitting diode chip for backlight unit.And this technological existing shortcoming does, the thermal resistance of elargol and tin cream that engages light-emitting diode chip for backlight unit and packaging body is excessive, so will cause the heat dissipation of packaging body effectively to bring into play because of elargol or the high existence of tin.
Another kind of heat dissipation technology is to utilize the acid and alkali-resistance adhesive tape to combine electroplating technology, and directly electroplates high-thermal conductive metal base plate in the bottom of light-emitting diode chip for backlight unit, is used as the metal cooling seat of light-emitting diode chip for backlight unit.This technological advantage does, light-emitting diode chip for backlight unit directly engages with metal cooling seat, do not need to come by elargol or tin cream bonding, so heat sinking benefit is much larger than aforesaid heat dissipation technology.
Yet the shortcoming of this kind heat dissipation technology is that after the plating of completion metal cooling seat, in removing the process of adhesive tape, cull can be stayed the front of light-emitting diode chip for backlight unit in a large number.These culls can't obtain effective removal, so will cause light-emitting diode chip for backlight unit impaired.
Secondly, adhesive tape also is that it is impaired that it is avoided in order to the luminescent layer and the electrode of protection light-emitting diode chip for backlight unit during manufacture craft except in order to light-emitting diode chip for backlight unit is fixed on the temporary substrate.Yet, through experiment confirm,, the front of light-emitting diode chip for backlight unit is located in the adhesive tape though pressing, and in the manufacturing process of metal cooling seat, adhesive tape can't effectively be protected the luminescent layer and the electrode of light-emitting diode chip for backlight unit.So the metal material of metal cooling seat still can be formed on the side and front of light-emitting diode chip for backlight unit, and cause the light-emitting diode chip for backlight unit damage, thereby cause the qualification rate of element not good, do not meet productivity effect.
Moreover on manufacture craft, the degree of depth that light-emitting diode chip for backlight unit embeds metal cooling seat can't be effectively controlled in the use of adhesive tape.Thus, the lateral light of light-emitting diode chip for backlight unit itself maybe to embed metal cooling seat too dark because of it, and can't from light-emitting diode, derive smoothly.
In addition, though can form one deck speculum earlier, form metal cooling seat again at the side of light-emitting diode chip for backlight unit.But the sidelight of light-emitting diode chip for backlight unit behind the export element, also can only transfer sidelight to light-emitting diode positive axial light through mirror reflects.Therefore, can't satisfy the application of the product that needs side emitting.
In addition, the price of the adhesive tape of acid and alkali-resistance characteristic is far above widely used blue film (Blue Tape) in the general technique for preparing light emitting diode, and expensive usually have more than ten times.Therefore, this kind package cooling technology can significantly increase the cost of manufacture of light-emitting diode.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of light-emitting diode and manufacture method, its PUR capable of using is fixedly light-emitting diode chip for backlight unit and support simultaneously, so manufacture craft is simple and easy to implement.
Another object of the present invention is to provide a kind of light-emitting diode and manufacture method, wherein, therefore can guarantee that the side of light-emitting diode chip for backlight unit can not covered by metal cooling seat because PUR can be formed on the side of light-emitting diode chip for backlight unit.Thereby, can effectively avoid the metal cooling seat of side direction bright dipping its side that covered of light-emitting diode chip for backlight unit to reflect.Die, not only can increase the sidelight extraction efficiency of light-emitting diode, more can improve the light extraction efficiency of light-emitting diode.
Therefore another purpose of the present invention is to provide a kind of light-emitting diode and manufacture method, and wherein because PUR can form on the side of support, in the time of can guaranteeing follow-up making metal cooling seat, the side of support can not covered by metal cooling seat.So, can effectively avoid forming short circuit between conductive metal layer and the metal cooling seat on the support, and can significantly improve the qualification rate of manufacture craft and the reliability of product.
A purpose more of the present invention is to provide a kind of light-emitting diode and manufacture method, and the bottom of its light-emitting diode chip for backlight unit directly engages with metal cooling seat, so light-emitting diode has splendid heat dissipation.
A purpose more of the present invention is to provide a kind of light-emitting diode and manufacture method, and it need not the bowl cup structure of preparation encapsulation usefulness in addition.
According to above-mentioned purpose of the present invention, a kind of light-emitting diode is proposed, it comprises a metal cooling seat, a support, a light-emitting diode chip for backlight unit and a packing colloid.Metal cooling seat comprises an arcuation raised ring.Prop up on the metal cooling seat in the outside that is set up in the arcuation raised ring.Wherein, support comprises the both sides that at least two conductive metal layers lay respectively at the arcuation raised ring.Light-emitting diode chip for backlight unit is located on the metal cooling seat within the arcuation raised ring.Wherein, light-emitting diode chip for backlight unit has different electrical one first electrode and one second electrodes, and first electrode and second electrode are electrically connected with aforesaid conductive metal layer respectively.Packing colloid envelopes the part of light-emitting diode chip for backlight unit, arcuation raised ring and each conductive metal layer.
According to one embodiment of the invention, above-mentioned metal cooling seat can comprise a metallic radiating layer and a metal level covers on the metallic radiating layer.
According to another embodiment of the present invention, above-mentioned metal cooling seat more can be equipped with one first groove, so that conductive metal layer electrically is located away from two sides of first groove.And above-mentioned support can be equipped with two through holes, and this support comprises two conducting metal posts and be located at respectively in the aforesaid through hole, conductive metal layer is electrically connected to the metal level of the aforementioned side that is positioned at first groove respectively.
According to another embodiment of the present invention, above-mentioned metal cooling seat more can be equipped with one second groove, and first groove and second groove are positioned at the both sides of light-emitting diode chip for backlight unit.
According to above-mentioned purpose of the present invention, other proposes a kind of manufacture method of light-emitting diode, comprises the following step.One temporary substrate is provided, and wherein this temporary substrate is provided with a hot melt adhesive layer.One support is embedded in the hot melt adhesive layer, and wherein this support comprises at least two parts, and each part is provided with a conductive metal layer.One light-emitting diode chip for backlight unit is embedded in the hot melt adhesive layer between these parts.Wherein, light-emitting diode chip for backlight unit has different electrical one first electrode and one second electrodes, and the hot melt adhesive layer between light-emitting diode chip for backlight unit and the support has an arc groove ring.Form a metal cooling seat and cover on support, light-emitting diode chip for backlight unit and the hot melt adhesive layer, and fill up the arc groove ring, and make metal cooling seat comprise an arcuation raised ring.Remove temporary substrate and hot melt adhesive layer, to expose aforesaid light-emitting diode chip for backlight unit, first electrode, second electrode, support, conductive metal layer and arc-shaped protrusions ring.First electrode and second electrode are electrically connected with aforesaid conductive metal layer respectively.Form the part that a packing colloid envelopes aforesaid light-emitting diode chip for backlight unit, arcuation raised ring and each conductive metal layer.
According to one embodiment of the invention, the material of above-mentioned hot melt adhesive layer can comprise vinyl acetate (EVA), polyolefin (Polyolefin) macromolecule, polyamide (Polyamide) resin or wax.
According to another embodiment of the present invention, the step of above-mentioned formation metal cooling seat can comprise: form a metal level and cover on support, light-emitting diode chip for backlight unit and the hot melt adhesive layer; And form a metallic radiating layer and cover metal level, and fill up the arc groove ring.
According to another embodiment of the present invention, also can comprise during above-mentioned making support: form two through holes, be arranged in respectively in the above-mentioned part of support, wherein these through holes expose the conductive metal layer of part respectively; And form two conducting metal posts, be filled in respectively in the aforementioned through hole.In addition, the step of formation metal cooling seat also can comprise: form one first groove and be arranged in the metal cooling seat, so that aforesaid conductive metal layer electrically is located away from the both sides of first groove.Wherein, these conducting metal posts are electrically connected to conductive metal layer respectively the metal level of the aforementioned side that is positioned at first groove.
According to an embodiment more of the present invention, the step of above-mentioned formation metal cooling seat also can comprise and forms one second groove and be arranged in the metal cooling seat, and first groove and second groove are positioned at two sides of light-emitting diode chip for backlight unit.
According to an embodiment more of the present invention, the step of above-mentioned formation metal cooling seat also comprises formation two insulating barriers and is filled in respectively in first groove and second groove.
According to an embodiment more of the present invention, machining manufacture craft capable of using, water cutter laser cutting manufacture craft or photoetching process when above-mentioned formation first groove and second groove.
According to an embodiment more of the present invention, the above-mentioned step that removes temporary substrate and hot melt adhesive layer can comprise: hot melt adhesive layer is carried out a thermoplastic handle; Separate temporary substrate and hot melt adhesive layer; And utilize an organic solvent to remove this hot melt adhesive layer.
Use execution mode of the present invention, have that manufacture craft is simple, advantages such as light extraction efficiency lifting, the increase of sidelight extraction efficiency, heat dissipation lifting, reliability and qualification rate lifting.
Description of drawings
For letting above-mentioned and other purposes of the present invention, characteristic, advantage and the embodiment can be more obviously understandable, the explanation of appended accompanying drawing be following:
Figure 1A to Fig. 1 J is the manufacture craft cutaway view of a kind of light-emitting diode of an execution mode of the present invention;
Fig. 2 A is the cutaway view of a kind of light-emitting diode of another embodiment of the present invention;
Fig. 2 B is the dorsal view of the light-emitting diode of Fig. 2 A;
Fig. 3 A is the cutaway view of a kind of light-emitting diode of another embodiment of the invention;
Fig. 3 B is the dorsal view of the light-emitting diode of Fig. 3 A.
The main element symbol description
100: temporary substrate 102: surface
104: hot melt adhesive layer 106: support
106a: support 108: part
110: part 112: conductive metal layer
114: conductive metal layer 116: side
118: side 120: light-emitting diode chip for backlight unit
122: 124: the first electrical semiconductor layers of substrate
126: 128: the second electrical semiconductor layers of luminescent layer
130: electrode 132: electrode
134: arc groove ring 136: metal level
136a: metal level 136b: metal level
138: metallic radiating layer 138a: metallic radiating layer
138b: metallic radiating layer 140: metal cooling seat
140a: metal cooling seat 140b: metal cooling seat
142: surface 144: arc-shaped protrusions ring
146: connect lead 148: connect lead
150: packing colloid 152: connect lead
154: connect lead 156: light-emitting diode
158: through hole 160: through hole
162: conducting metal post 164: the conducting metal post
166: groove 168: insulating barrier
170: part 172: part
174: light-emitting diode 176: groove
178: insulating barrier 180: part
182: part 184: part
186: light-emitting diode
Embodiment
Please with reference to Figure 1A to Fig. 1 J, it is the manufacture craft cutaway view that illustrates according to a kind of light-emitting diode of an execution mode of the present invention.In this execution mode, when making light-emitting diode, temporary substrate 100 can be provided earlier.This temporary substrate 100 can for example be a flat board.In addition, temporary substrate 100 is preferably the material of the harder and acid and alkali-resistance of employing.Then, shown in Figure 1A, utilize for example coating method, hot melt adhesive layer 104 is formed uniformly on the surface 102 of temporary substrate 100.Hot melt adhesive layer 104 can for example comprise vinyl acetate, polyolefin macromolecule, polyamide or wax.The thickness of hot melt adhesive layer 104 is preferably greater than 10 μ m.
Next, shown in Figure 1B, support 106 is provided, and support 106 is pressed in the hot melt adhesive layer 104, and support 106 is embedded in hot melt adhesive layer 104.Support 106 comprises two parts 108 and 110 at least.Wherein, be respectively equipped with conductive metal layer 112 and 114 on these two parts 108 and 110. Part 108 and 110 material are preferably the employing insulating material.In one embodiment, the portion 108 and the material 110 may be a sapphire or polyphthalamide Xian amine (Polyphthalamide; PPA).In addition, mode is established in conductive metal layer 112 and 114 for example platings capable of using, and is respectively formed on part 108 and 110.
In this execution mode, when being pressed into support 106 in the hot melt adhesive layer 104, be support 106 is provided with the mode of a side of conductive metal layer 112 and 114, support 106 is pressed in the hot melt adhesive layer 104 towards hot melt adhesive layer 104.Therefore, shown in Figure 1B, the conductive metal layer 112 and 114 that hot melt adhesive layer 104 can complete covered stent 106 is to avoid conductive metal layer 112 on the support 106 to be connected with the heat dissipation metal material of subsequent deposition with 114 and form short circuit.In addition; After support 106 is pressed in the hot melt adhesive layer 104; Relation because of the PUR material; Hot melt adhesive layer 104 can attached to the side 116 of the part 108 of support 106, with the side 118 of part 110 on, and hot melt adhesive layer 104 forms arc structure around the side 118 of the side 116 of part 108 and part 110.
Next, light-emitting diode chip for backlight unit is provided, for example horizontal conducting type light-emitting diode chip for backlight unit 120 shown in Fig. 1 C or common vertical conducting type light-emitting diode chip for backlight unit.In this execution mode, will be that example describes with horizontal conducting type light-emitting diode chip for backlight unit 120.Light-emitting diode chip for backlight unit 120 mainly can comprise substrate 122, the first electrical semiconductor layer 124, luminescent layer 126, second electrical semiconductor layer 128 and electrode 130 and 132.Wherein, The first electrical semiconductor layer 124 is positioned on the substrate 122; Luminescent layer 126 is positioned on the first electrical semiconductor layer 124 of part, and the second electrical semiconductor layer 128 is positioned on the luminescent layer 126, and electrode 130 is positioned on another part that the first electrical semiconductor layer 124 exposes; Electrode 132 then is positioned on the second electrical semiconductor layer 128 of part, shown in Fig. 1 C.In the present invention, first electrically is different electrical with second electrically.For example, first electrically with second electrical one be the n type wherein, another person then is the p type.
Afterwards, light-emitting diode chip for backlight unit 120 is pressed in the hot melt adhesive layer 104, and makes light-emitting diode chip for backlight unit 120 between two parts 108 and 110 of support 106.In this execution mode; When being pressed into light-emitting diode chip for backlight unit 120 in the hot melt adhesive layer 104; Be light-emitting diode chip for backlight unit 120 is provided with the mode of a side of electrode 130 and 132, light-emitting diode chip for backlight unit 120 is pressed in the hot melt adhesive layer 104 towards hot melt adhesive layer 104.In addition, after light-emitting diode chip for backlight unit 120 was pressed in the hot melt adhesive layer 104, same relation because of the PUR material was on hot melt adhesive layer 104 sides of meeting attached to light-emitting diode chip for backlight unit 120.Therefore, shown in Fig. 1 C, the electrode 130 that hot melt adhesive layer 104 can complete coating light-emitting diode chip for backlight unit 120 and the side of the epitaxial structure that the 132 and first electrical semiconductor layer 124, luminescent layer 126 and the second electrical semiconductor layer 128 are constituted.Thus, through the protection of hot melt adhesive layer 104, can prevent effectively that light-emitting diode chip for backlight unit 120 is impaired in the deposition process of follow-up heat dissipation metal material.
In addition, hot melt adhesive layer 104 equally also can form arc structure in the side periphery of light-emitting diode chip for backlight unit 120.Therefore, shown in Fig. 1 C, after support 106 and light-emitting diode chip for backlight unit 120 all were embedded in the hot melt adhesive layer 104, the hot melt adhesive layer 104 between light-emitting diode chip for backlight unit 120 and the support 106 had arc groove ring 134.
In the present invention, support can comprise the part more than two, and can provide several light-emitting diode chip for backlight unit to be separately positioned between the two adjacent parts.Therefore, method of the present invention can be made a plurality of light-emitting diodes simultaneously.
Then, shown in Fig. 1 D, for example utilizing, depositional mode formation metal level 136 covers on hot melt adhesive layer 104, support 106 and the light-emitting diode chip for backlight unit 120.This depositional mode can for example be vapor deposition (evaporation), sputter (sputtering), electroless-plating (electroless plating) or electron beam evaporation plating.In one embodiment, metal level 136 can be a simple layer structure.In another embodiment, metal level 136 can be a multilayer materials structure.The thickness of metal level 136 is preferably and is controlled at less than 3 μ m.
In one embodiment; The material of metal level 136 can for example be tin indium oxide (ITO), gold (Au), silver (Ag), platinum (Pt), palladium (Pd), nickel (Ni), chromium (Cr), titanium (Ti), tantalum (Ta), aluminium (Al), indium (In), tungsten (W), copper (Cu), perhaps contains the alloy of nickel, chromium, titanium, tantalum, aluminium, indium, tungsten or copper.In a preferred embodiment, the material of metal level 136 can adopt the metal material of highly reflective, for example silver, platinum, aluminium, gold, nickel or titanium.Because metal level 136 also covers on the arc groove ring 134 of hot melt adhesive layer 104, thereby metal level 136 is being formed with the arc-shaped protrusions structure corresponding to arc groove ring 134 parts.Therefore, metal level 136 can reflect the lateral light of light-emitting diode chip for backlight unit 120, helps the taking-up of the lateral light of light-emitting diode chip for backlight unit 120.
Next, shown in Fig. 1 E, for example utilize depositional mode to form metallic radiating layer 138 and cover on the metal level 136, and fill up the arc groove ring 134 of hot melt adhesive layer 104.Accomplished the making of the metal cooling seat of being formed by metal level 136 and metallic radiating layer 138 140 so.In a preferred embodiment, can adopt plating mode during plated metal heat dissipating layer 138.Metallic radiating layer 138 can be comparatively thicker, to provide light-emitting diode chip for backlight unit 120 bigger heat dissipation.In one embodiment, the thickness of metallic radiating layer 138 can be for example from 50 μ m to 500 μ m.In addition, the material of metallic radiating layer 138 can for example be a copper.
In an example, after the deposition of completion metallic radiating layer 138, more optionally the surface 142 of metallic radiating layer 138 is ground.After grinding, the roughness on the surface 142 of metallic radiating layer 138 (from the peak on surface 142 to minimum point) from
to 10 μ m.
Because metal cooling seat 140 covers on the hot melt adhesive layer 104, and fills up the arc groove ring 134 of hot melt adhesive layer 104.Therefore, shown in Fig. 1 E, corresponding to arc groove ring 134 parts of hot melt adhesive layer 104, metal cooling seat 140 has arcuation raised ring 144.And because, have the arc groove ring 134 of hot melt adhesive layer 104 between light-emitting diode chip for backlight unit 120 and the support 106, and light-emitting diode chip for backlight unit 120 is between two parts 108 and 110 of support 106.Therefore, support 106 all is positioned on the metal cooling seat 140 with light-emitting diode chip for backlight unit 120, and two parts 108 and 110 of support 106 are positioned at the outside of arcuation raised ring 144, and light-emitting diode chip for backlight unit 120 then is positioned within this arcuation raised ring 144.In addition, lay respectively at the conductive metal layer 112 and 114 on the part 108 and 110 of support 106, also lay respectively at two sides of this arcuation raised ring 144.
Then; Removable temporary substrate 100 and hot melt adhesive layer 104, and light-emitting diode chip for backlight unit 102 that hot melt adhesive layer 104 is covered and electrode 130 and 132 thereof, support 106 and on conductive metal layer 112 and 114 and the arc-shaped protrusions ring 144 of metal cooling seat 140 expose.In one embodiment, temporary substrate 100 can remove with hot melt adhesive layer 104 simultaneously, for example peels off temporary substrate 100 simultaneously through removing hot melt adhesive layer 104.
In another embodiment, shown in Fig. 1 F, utilize the for example structure shown in heating plate heating Fig. 1 E, handle hot melt adhesive layer 104 is carried out thermoplastic.Hot melt adhesive layer 104 can be opened temporary substrate 100 and hot melt adhesive layer in 104 minutes after thermoplastic.Next, can the structure shown in Fig. 1 F be soaked in the organic solvent, for example be soaked in acetone, isopropyl alcohol or the ethyl acetate, remove hot melt adhesive layer 104 to utilize organic solvent.So, can expose light-emitting diode chip for backlight unit 120 and electrode 130 and 132 thereof, support 106 and on conductive metal layer 112 and 114 and the arc-shaped protrusions ring 144 of metal cooling seat 140, shown in Fig. 1 G.
In certain embodiments, emery wheel next more capable of using or laser, for example wet type laser or dry laser cut the redundance of removing metal cooling seat 140, and form the structure shown in Fig. 1 G.
Then; Shown in Fig. 1 H; For example utilizing, routing engages (wire-bonding) mode; To connect the electrode 130 and conductive metal layer 114 and electrode 132 and conductive metal layer 112 that lead 146 and 148 is connected light-emitting diode chip for backlight unit 120 respectively, be used to make electrode 130 and 132 to be electrically connected with conductive metal layer 114 and 112 respectively.Wherein, connecting lead 146 and 148 can for example be gold thread.
Next, shown in Fig. 1 I, for example utilize that point gum machine (Dispenser) carries out the sealing program, with packing colloid 150, for example silica gel (Silicone) or epoxy resin (Epoxy) are inserted between two parts 108 and 110 of support 106.Shown in Fig. 1 I, packing colloid 150 envelopes light-emitting diode chip for backlight unit 120 and arcuation raised ring 144 fully, and is connected lead 146 and 148, and envelopes the part of each conductive metal layer 114 and 112.In one embodiment; Packing colloid 150 is preferably and envelopes conductive metal layer 114 and be connected lead 146 joint parts and conductive metal layer 112 and be connected lead 148 joint parts, to guarantee conductive metal layer 114 and to be connected lead 146 and conductive metal layer 112 and the joint reliability that is connected lead 148.
Because metal cooling seat 140 can provide light-emitting diode chip for backlight unit 120 favorable rigidity to support with support 106, and the use of collocation reflecting material, can make to have good arcuation raised ring 144 structures of reflection between light-emitting diode chip for backlight unit 120 and the support 106.Therefore, do not need to use in addition traditional encapsulation bowl cup, and can directly carry out follow-up encapsulation the structure shown in Fig. 1 I.Shown in Fig. 1 J, same for example routing juncture capable of using, and, respectively conductive metal layer 114 and 112 is connected to an external power source (not illustrating) to connect lead 152 and 154, portion's power supply provides light-emitting diode chip for backlight unit 120 electric power to utilize in addition.So far, roughly accomplish the making of light-emitting diode 156.Likewise, connecting lead 152 and 154 can for example be gold thread.
Light-emitting diode of the present invention also can otherwise come to be connected with external power source, and need not through connecting lead.Please with reference to Fig. 2 A and Fig. 2 B, it is cutaway view and the dorsal view that illustrates respectively according to a kind of light-emitting diode of another embodiment of the present invention.In this execution mode, the framework of light-emitting diode 174 haply with above-mentioned execution mode in light-emitting diode 156 identical.Wherein, shown in Fig. 2 A, the difference of light-emitting diode 156 and 174 between the two mainly is: support 106a compared to support more than 106 through hole 158 and 160, and through hole 158 and 160 is filled out respectively and is provided with conducting metal post 162 and 164; And the metal cooling seat 140a that is constituted by metal level 136a and metallic radiating layer 138a compared to the metal cooling seat more than 140 that is constituted by metal level 136 and metallic radiating layer 138 groove 166 and alternative be filled in the insulating barrier 168 in the groove 166.
When making support 106a, for example machining capable of using, water cutter laser or photoetching and etching mode form through hole 158 and 160 respectively on the predeterminated position of the part 108 of support 106a and 110.Wherein, through hole 158 and 160 runs through part 108 and 110, and through hole 158 and 160 lays respectively at two sides of light-emitting diode chip for backlight unit 120.The conductive metal layer 112 and 114 the scope that is provided with contain the predeterminated position of part 108 and 110, so through hole 158 and 160 exposes the part of conductive metal layer 112 and 114 respectively.After through hole 158 and 160 formed, for example electroless-plating mode capable of using formed conducting metal and inserts through hole 158 and 160.So, can in through hole 158 and 160, form conducting metal post 162 and 164 respectively.
Shown in Fig. 2 A, conductive metal layer 112 and 114 lays respectively on the opening of through hole 158 and 160 1 ends of support 106a, and covers in the opening of through hole 158 and 160 respectively fully.Therefore, be respectively formed at the conducting metal post 162 and 164 in through hole 158 and 160, can contact with 114 with conductive metal layer 112 respectively and form electrical connection.
After conducting metal post 162 and 164 forms, can form metal level 136a and metallic radiating layer 138a in regular turn and cover on light-emitting diode chip for backlight unit 120, support 106a and conducting metal post 162 and 164.Because metal level 136a covers and contact conducting metal post 162 and 164, so conducting metal post 162 and 164 can be electrically connected to metal level 136a with conductive metal layer 112 and 114 respectively.
In an embodiment of this execution mode, when making metal cooling seat 140a, can form the continuous metal level of one deck earlier, form the continuous metallic radiating layer of one deck again and cover on this continuous metal level.Then, utilize for example machining, water cutter laser cutting or photoetching and etching mode, on the predeterminated position of this continuous stacked structure that metal level and metallic radiating layer constituted, form groove 166, and form metal cooling seat 140a.
In one embodiment, because groove 166 has enough support forces for guaranteeing total when making, and possibly need to rely on support 106a that the support of total both sides is provided, so the position of groove 166 is preferably in the scope that is formed on support 106a.Shown in Fig. 2 A, a side opening of groove 166 exposes the part surface of the part 108 of support 106a.
Please be simultaneously with reference to Fig. 2 A and Fig. 2 B, groove 166 is formed at a side of light-emitting diode chip for backlight unit 120, and groove 166 runs through metal cooling seat 140a, and metal cooling seat 140a is separated into two parts 170 and 172.In addition, the conducting metal post 162 and 164 among the support 106a lays respectively at two sides of groove 166.Therefore, the setting of groove 166 can make the conductive metal layer 112 and 114 on the support 106a reach electrical communication via the conducting metal post 162 and 164 of below, and metal cooling seat 140a.Therefore, conductive metal layer 112 and 114 electrically is located away from two sides of groove 166.And conducting metal post 162 and 164 can be electrically connected to the part 170 of groove 166 2 sides and 172 metal level 136a with conductive metal layer 112 and 114 respectively.
In one embodiment, shown in Fig. 2 A and Fig. 2 B, more can in groove 166, insert insulating barrier 168, but with further raising conductive metal layer 112 and 114 electrical isolation in the reliability of two sides of groove 166.
In this execution mode, through the setting of groove 166, the part 170 of the metal cooling seat 140a that conductive metal layer 112 can be through conducting metal post 162 and groove 166 1 sides is electrically connected and reach with an electrode of external power source.Conductive metal layer 114 then can be through conducting metal post 164 and groove 166 opposite sides the part 172 of metal cooling seat 140a, be electrically connected and reach with another electrode of external power source.Therefore, through metal cooling seat 140a direct surface being adhered to the mode of battery lead plate or circuit board, light-emitting diode chip for backlight unit 120 can reach with external power source and be electrically connected.At this moment, metal cooling seat 140a can be used as the electrode of surface adhering technology.
The metal cooling seat of light-emitting diode of the present invention also can comprise two grooves, and makes light-emitting diode have the thermoelectric service performance that separates.Please with reference to Fig. 3 A and Fig. 3 B, it is cutaway view and the dorsal view that illustrates respectively according to a kind of light-emitting diode of another embodiment of the invention.In this execution mode, the framework of light-emitting diode 186 haply with above-mentioned execution mode in light-emitting diode 174 identical.Wherein, the difference of light-emitting diode 174 and 186 between the two mainly is: except groove 166, the metal cooling seat 140b that is constituted by metal level 136b and metallic radiating layer 138b compared to metal cooling seat 140a many again a groove 176.That is to say that this execution mode can be produced another groove 176 in the lump when making groove 166 in metal cooling seat 140b.
In one embodiment; Because groove 166 and 176 is when making; For guaranteeing that total has enough support forces, and possibly need to rely on support 106a that the support of total both sides is provided, so the position of groove 166 and 176 is preferably in the scope that is formed on support 106a.Shown in Fig. 3 A, groove 166 and a side opening of 176 expose the part 108 of support 106a and 110 part surface respectively.
Shown in Fig. 3 A and Fig. 3 B; In light-emitting diode 186; Groove 166 and 176 is respectively formed at two sides of light-emitting diode chip for backlight unit 120, and groove 166 and 176 is respectively between between conducting metal post 162 and the light-emitting diode chip for backlight unit 120 and between conducting metal post 164 and the light-emitting diode chip for backlight unit 120.In addition, groove 166 and 176 all runs through metal cooling seat 140b, and metal cooling seat 140b is separated into three parts 180,182 and 184.Therefore, groove 166 or 176 setting, can make conductive metal layer 112 and 114 on the support 106a can't be respectively via the conducting metal post 162 of below and 164 and metal cooling seat 140b, reach electrical communication.Therefore, conductive metal layer 112 and 114 electrically is located away from the both sides of groove 166 or 176.And conducting metal post 162 and 164 can be electrically connected to conductive metal layer 112 and 114 the metal level 136b of part 180 with the part 184 in groove 176 outsides in groove 166 outsides respectively.
In one embodiment, shown in Fig. 3 A and Fig. 3 B, more can in groove 166 and 176, insert insulating barrier 168 and 178 respectively, but with further raising conductive metal layer 112 and 114 electrical isolation in the reliability of the both sides of groove 166 or 176.
In this execution mode, through the setting of groove 166 and 176, the part 180 of the metal cooling seat 140b that conductive metal layer 112 can be through conducting metal post 162 and groove 166 outsides is electrically connected and reach with an electrode of external power source.Conductive metal layer 114 then can be through conducting metal post 164 and groove 176 outsides the part 184 of metal cooling seat 140b, be electrically connected and reach with another electrode of external power source.
In addition; Because separated respectively groove 166 and 176 of being provided with between light-emitting diode chip for backlight unit 120 belows and conducting metal post 162 and 164; Therefore the heat that is produced during light-emitting diode chip for backlight unit 120 runnings mainly is to conduct through the part 182 between groove 166 and 176 s' metal cooling seat 140b.Therefore, for light-emitting diode chip for backlight unit 120, its electric power of metal cooling seat 140b conduction is what to be separated with the part of heat.That is light-emitting diode 186 has the thermoelectric service performance that separates.Likewise, through metal cooling seat 140b direct surface being adhered to the mode of battery lead plate or circuit board, light-emitting diode chip for backlight unit 120 can reach with external power source and be electrically connected.At this moment, metal cooling seat 140b can be used as the electrode of surface adhering technology.
Execution mode by the invention described above can know, an advantage of the present invention is exactly because light-emitting diode of the present invention and manufacture method PUR capable of using fixedly light-emitting diode chip for backlight unit and support simultaneously, so manufacture craft is simple and easy to implement.
Execution mode by the invention described above can be known; Another advantage of the present invention is exactly because in light-emitting diode of the present invention and manufacture method; Because PUR can be formed on the side of light-emitting diode chip for backlight unit, therefore can guarantee that the side of light-emitting diode chip for backlight unit can not covered by metal cooling seat.Thereby, can effectively avoid the metal cooling seat of side direction bright dipping its side that covered of light-emitting diode chip for backlight unit to reflect.Die, not only can increase the sidelight extraction efficiency of light-emitting diode, more can improve the light extraction efficiency of light-emitting diode.
Execution mode by the invention described above can be known; Another advantage of the present invention is exactly because in light-emitting diode of the present invention and manufacture method; Because PUR can form on the side of support; Therefore in the time of can guaranteeing follow-up making metal cooling seat, the side of support can not covered by metal cooling seat.So, can effectively avoid forming short circuit between conductive metal layer and the metal cooling seat on the support, and can significantly improve the qualification rate of manufacture craft and the reliability of product.
Execution mode by the invention described above can be known; An advantage more of the present invention is exactly because in light-emitting diode of the present invention and manufacture method; The bottom of light-emitting diode chip for backlight unit directly engages with metal cooling seat, so light-emitting diode has splendid heat dissipation.
Execution mode by the invention described above can know that an advantage more of the present invention is that light-emitting diode of the present invention and manufacture method need not the bowl cup structure of preparation encapsulation usefulness in addition.
Though disclosed the present invention in conjunction with above embodiment; Yet it is not in order to limit the present invention; Anyly be familiar with this operator in this technical field; Do not breaking away from the spirit and scope of the present invention, can do various changes and retouching, thus protection scope of the present invention should with enclose claim was defined is as the criterion.
Claims (20)
1. light-emitting diode comprises:
Metal cooling seat comprises an arcuation raised ring;
Support is located on this metal cooling seat in the outside of this arcuation raised ring, and wherein this support comprises at least two conductive metal layers, lays respectively at the both sides of this arcuation raised ring;
Light-emitting diode chip for backlight unit is located on this metal cooling seat within this arcuation raised ring, and wherein this light-emitting diode chip for backlight unit has different electrical first electrode and second electrodes, and this first electrode is electrically connected with those conductive metal layers respectively with this second electrode; And
Packing colloid envelopes the part of this light-emitting diode chip for backlight unit, this arcuation raised ring and each those conductive metal layer.
2. light-emitting diode as claimed in claim 1 also comprises two and connects lead, respectively those conductive metal layers is connected to an external power source.
3. light-emitting diode as claimed in claim 1, wherein this metal cooling seat comprises metallic radiating layer and metal level covers on this metallic radiating layer.
4. light-emitting diode as claimed in claim 3, wherein
This metal cooling seat also is equipped with first groove, so that those conductive metal layers electrically are located away from the both sides of this first groove; And
This support also is equipped with two through holes, and this support comprises two conducting metal posts, is located at respectively in those through holes, those conductive metal layers are electrically connected to this metal level of those sides that are positioned at this first groove respectively.
5. light-emitting diode as claimed in claim 4, wherein this metal cooling seat also is equipped with second groove, and this first groove and this second groove are positioned at the both sides of this light-emitting diode chip for backlight unit.
6. light-emitting diode as claimed in claim 5, wherein this metal cooling seat also comprises two insulating barriers, and those insulating barriers are filled in respectively in this first groove and this second groove.
7. light-emitting diode as claimed in claim 4, wherein this metal cooling seat is a surface adhering electrode of this light-emitting diode chip for backlight unit, this metal cooling seat is applicable to and directly is adhered to a battery lead plate or a circuit board.
8. light-emitting diode as claimed in claim 3, wherein the material of this metal level is a highly reflective metal, this highly reflective metal comprises silver, platinum, aluminium, gold, nickel or titanium.
9. light-emitting diode as claimed in claim 3, wherein the material of this metallic radiating layer is a copper.
10. light-emitting diode as claimed in claim 1, wherein this support comprises at least two insulated parts, and those conductive metal layers plate respectively and are located on those insulated parts.
11. the manufacture method of a light-emitting diode comprises:
One temporary substrate is provided, and wherein this temporary substrate is provided with a hot melt adhesive layer;
One support is embedded in this hot melt adhesive layer, and wherein this support comprises two parts at least, and each those part is provided with a conductive metal layer;
One light-emitting diode chip for backlight unit is embedded in this hot melt adhesive layer between those parts; Wherein this light-emitting diode chip for backlight unit has different electrical one first electrode and one second electrodes, and this hot melt adhesive layer between this light-emitting diode chip for backlight unit and this support has an arc groove ring;
Form a metal cooling seat and cover on this support, this light-emitting diode chip for backlight unit and this hot melt adhesive layer, and fill up this arc groove ring, and make this metal cooling seat comprise an arcuation raised ring;
Remove this temporary substrate and this hot melt adhesive layer, to expose this light-emitting diode chip for backlight unit, this first electrode, this second electrode, this support, those conductive metal layers and this arc-shaped protrusions ring;
This first electrode and this second electrode are electrically connected with those conductive metal layers respectively; And
Form the part that a packing colloid envelopes this light-emitting diode chip for backlight unit, this arcuation raised ring and each those conductive metal layer.
12. the manufacture method of light-emitting diode as claimed in claim 11, wherein the material of this hot melt adhesive layer comprises vinyl acetate, polyolefin macromolecule, polyamide or wax.
13. the manufacture method of light-emitting diode as claimed in claim 11, the step that wherein forms this metal cooling seat comprises:
Forming a metal level covers on this support, this light-emitting diode chip for backlight unit and this hot melt adhesive layer; And
Form a metallic radiating layer and cover this metal level, and fill up this arc groove ring.
14. the manufacture method of light-emitting diode as claimed in claim 13, wherein
Also comprise when making this support:
Form two through holes and be arranged in those parts, wherein those through holes expose those conductive metal layers of part respectively; And
Forming two conducting metal posts is filled in respectively in those through holes; And
The step that forms this metal cooling seat also comprises:
Forming one first groove is arranged in this metal cooling seat; So that those conductive metal layers electrically are located away from the both sides of this first groove, wherein those conducting metal posts are electrically connected to those conductive metal layers respectively this metal level of those sides that are positioned at this first groove.
15. the manufacture method of light-emitting diode as claimed in claim 14; The step that wherein forms this metal cooling seat also comprises and forms one second groove and be arranged in this metal cooling seat, and this first groove and this second groove are positioned at the both sides of this light-emitting diode chip for backlight unit.
Form two insulating barriers 16. the manufacture method of light-emitting diode as claimed in claim 15, the step that wherein forms this metal cooling seat also comprise, be filled in respectively in this first groove and this second groove.
17. the manufacture method of light-emitting diode as claimed in claim 15 is to utilize a machining manufacture craft, a water cutter laser cutting manufacture craft or a photoetching process when wherein forming this first groove and this second groove.
18. the manufacture method of light-emitting diode as claimed in claim 13, wherein the material of this metal level is a highly reflective metal, and this highly reflective metal comprises silver, platinum, aluminium, gold, nickel or titanium.
19. the manufacture method of light-emitting diode as claimed in claim 11, the step that wherein removes this temporary substrate and this hot melt adhesive layer comprises:
This hot melt adhesive layer is carried out a thermoplastic to be handled;
Separate this temporary substrate and this hot melt adhesive layer; And
Utilize an organic solvent to remove this hot melt adhesive layer.
20. the manufacture method of light-emitting diode as claimed in claim 11 before or after the step that forms this packing colloid, also comprises and utilizes two to connect lead, respectively those conductive metal layers is connected to an external power source.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100105278A TWI424594B (en) | 2011-02-17 | 2011-02-17 | Light-emitting diode device and method for manufacturing the same |
| TW100105278 | 2011-02-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102646775A true CN102646775A (en) | 2012-08-22 |
Family
ID=46659471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101350386A Pending CN102646775A (en) | 2011-02-17 | 2011-05-24 | Light emitting diode element and manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102646775A (en) |
| TW (1) | TWI424594B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106097904A (en) * | 2016-07-15 | 2016-11-09 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode display part and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101436632A (en) * | 2007-11-12 | 2009-05-20 | 良峰塑胶机械股份有限公司 | LED chip component with heat-dissipating substrate and preparation method thereof |
| CN101442040A (en) * | 2007-11-20 | 2009-05-27 | 奇力光电科技股份有限公司 | Encapsulation structure for LED and method of manufacturing the same |
| US20100072502A1 (en) * | 2008-09-25 | 2010-03-25 | Citizen Electronics Co., Ltd. | Light-emitting diode |
| WO2010117073A1 (en) * | 2009-04-08 | 2010-10-14 | 岩谷産業株式会社 | Semiconductor device |
| KR20100136050A (en) * | 2009-06-18 | 2010-12-28 | 서울반도체 주식회사 | Heat dissipating led package |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006339224A (en) * | 2005-05-31 | 2006-12-14 | Tanazawa Hakkosha:Kk | Substrate for led and led package |
| TWI297537B (en) * | 2006-06-26 | 2008-06-01 | Univ Nat Cheng Kung | Embedded metal heat sink for semiconductor device and method for manufacturing the same |
-
2011
- 2011-02-17 TW TW100105278A patent/TWI424594B/en not_active IP Right Cessation
- 2011-05-24 CN CN2011101350386A patent/CN102646775A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101436632A (en) * | 2007-11-12 | 2009-05-20 | 良峰塑胶机械股份有限公司 | LED chip component with heat-dissipating substrate and preparation method thereof |
| CN101442040A (en) * | 2007-11-20 | 2009-05-27 | 奇力光电科技股份有限公司 | Encapsulation structure for LED and method of manufacturing the same |
| US20100072502A1 (en) * | 2008-09-25 | 2010-03-25 | Citizen Electronics Co., Ltd. | Light-emitting diode |
| WO2010117073A1 (en) * | 2009-04-08 | 2010-10-14 | 岩谷産業株式会社 | Semiconductor device |
| KR20100136050A (en) * | 2009-06-18 | 2010-12-28 | 서울반도체 주식회사 | Heat dissipating led package |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106097904A (en) * | 2016-07-15 | 2016-11-09 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode display part and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201236224A (en) | 2012-09-01 |
| TWI424594B (en) | 2014-01-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9905741B2 (en) | Light emitting device and manufacturing method thereof | |
| EP2784833B1 (en) | Light emitting device and method of manufacturing the same | |
| US8193541B2 (en) | Light emitting diode structure having a conductive thin film for connecting a light emitting stack to an electrode and LED packaging structure using the same | |
| EP1748480B1 (en) | Connection structure for attaching a semiconductor chip to a metal substrate, semiconductor chip and electronic component including the connection structure and methods for producing the connection structure | |
| CN102237473B (en) | Light emitting diode and manufacturing method thereof | |
| CN103140948B (en) | Electroplate the optoelectronic semiconductor assembly of coating and the method for the manufacture of optoelectronic semiconductor assembly | |
| TW200845424A (en) | LED assembly having maximum metal support for laser lift-off of growth substrate | |
| CN104810435A (en) | Thin-film LED with P and N contacts electrically isolated from the substrate | |
| CN104157636A (en) | Light emitting device and method for manufacturing same | |
| TW200901505A (en) | Light emitting device and method for manufacturing the same | |
| CN104756267A (en) | Light emitting device, method for manufacturing same, and body having light emitting device mounted thereon | |
| CN103227276B (en) | Light emitting semiconductor device and manufacture method thereof | |
| CN101005107A (en) | Flip-chip light emitting diode with metal convex spot array structure and its producing method | |
| CN101459210A (en) | Encapsulation structure for photoelectric element and manufacturing process thereof | |
| CN102646774A (en) | Light emitting diode element and manufacturing method thereof | |
| CN101852345B (en) | Light-emitting diode (LED) light source module | |
| US20120193671A1 (en) | Light-emitting diode device and method for manufacturing the same | |
| US8969907B2 (en) | Flip-chip light emitting diode | |
| CN102646775A (en) | Light emitting diode element and manufacturing method thereof | |
| TWI397200B (en) | Light-emitting diode device, and package structure and manufacturing method thereof | |
| TWI473299B (en) | Flip-chip light emitting diode and manufacturing method and application thereof | |
| KR20090062070A (en) | Metal base circuit board superior in heat dissipation property and method of manufacturing the same | |
| US11309297B2 (en) | Light-emitting diode chip, device, and lamp | |
| JP6123215B2 (en) | Light emitting device | |
| US20050040212A1 (en) | Method for manufacturing nitride light-emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120822 |