TWI397200B - Light-emitting diode device, and package structure and manufacturing method thereof - Google Patents

Description

Light-emitting diode element, package structure and manufacturing method thereof

The present invention relates to a light-emitting element, and more particularly to a light-emitting diode (LED) element, a package structure and a method of fabricating the same.

With the dramatic increase in the use of light-emitting diodes in high-brightness products such as everyday lighting and automotive headlamps, the operating power of LEDs has also increased. However, in general, only about 20% of the input power of a light-emitting diode chip can be converted into light energy, and about 80% of the light is converted into heat. Therefore, as the operating power of the LED chip is increased, the heat generated by the operation of the LED chip is also increased, so that the demand for heat dissipation of the LED chip is also increasing.

At present, a heat dissipation technology commonly applied to a package process of a light-emitting diode wafer is to use silver paste to fix a light-emitting diode wafer on a package having a heat dissipation function. In this way, the package can be used to help dissipate heat from the LED chip. However, the thermal resistance of the silver paste bonded between the LED chip and the package is too large, and the heat dissipation performance of the package cannot be effectively exerted, which seriously wastes the heat dissipation performance of the package.

Another heat dissipation technique applied to the package process of a light-emitting diode wafer is to directly plate a metal heat sink base on the bottom of the light-emitting diode wafer with the aid of an acid-resistant tape. Therefore, the LED chip can be directly bonded to the metal heat sink base without passing through the silver paste, so that the entire LED component has a large heat dissipation capability. However, in this heat dissipation technology, when the metal heat sink base is removed after plating, the adhesive residue of the tape remains on the front side of the light emitting diode chip, and the residual glue cannot be effectively removed, thereby causing the light emitting diode. The body wafer is damaged. Secondly, the tape cannot effectively protect the light-emitting structure and the electrode of the LED chip during the fabrication process of the subsequent metal heat-dissipating pedestal, so that the heat-dissipating metal is plated on the side and the front side of the LED chip, thereby causing the light-emitting diode The damage of the polar body wafer leads to poor process yield and is inconsistent with production efficiency. Moreover, the use of the tape does not effectively control the depth of the light-emitting diode chip embedded in the heat-dissipating metal base. Therefore, when the depth of the light-emitting diode chip embedded in the heat-dissipating metal base is too large, the side light of the light-emitting diode chip cannot be caused. Smooth export. Although the mirror can be plated on the side of the LED chip and the heat sink metal base is disposed, the side light of the LED chip can only be converted into front axial light after being led out by the mirror, and thus cannot be satisfied. The application of products that require side lighting. In addition, the price of acid-resistant tape is very expensive, about ten times more than the blue film widely used in the current process, which will lead to a significant increase in process costs. Furthermore, the thermoelectric separation design of the LED component is different from the existing LED package module, so that the LED component cannot be directly inserted into the existing LED package module. It is necessary to re-develop new modules for various light-emitting diode products, which will cause a lot of production and application difficulties.

Therefore, the object of the present invention is to provide a light-emitting diode element and a method of manufacturing the same, which can bond a light-emitting diode wafer and a heat-dissipating metal layer without using silver glue or acid-base tape. The heat dissipation performance of the LED component can be greatly improved, and the process cost can be effectively reduced.

Another object of the present invention is to provide a light emitting diode element and a manufacturing method thereof, which can not only effectively protect the light emitting structure and the electrode of the light emitting diode chip but also contribute to the light resisting layer used in the manufacturing process. Controlling the depth of the light-emitting diode chip embedded in the heat-dissipating metal layer, thereby preventing the light-emitting diode chip from being damaged in the subsequent metal plating process, thereby greatly improving the process yield and satisfying the side light-emitting diode product. application.

Another object of the present invention is to provide a package structure of a light-emitting diode element and a method for fabricating the same, wherein a eutectic material layer is disposed at the bottom of the light-emitting diode element, so that the heat-dissipating metal layer at the bottom of the element can utilize the eutectic material. The layer is fixed on the package base by low-temperature heating such as infrared rays, so that the long-term high-temperature curing process of the conventional bonding element and the package base can be prevented from causing thermal damage of the LED chip, and the eutectic material layer is also It can reduce the thermal resistance and improve the heat dissipation effect. It can also satisfy the existing package base without the thermoelectric design of the package base, which is beneficial to mass production and application.

According to the above object of the present invention, a light emitting diode element and a package structure thereof are proposed. The light emitting diode element comprises: a thermally conductive metal layer having opposite first and second surfaces, and the first surface of the thermally conductive metal layer comprises a recess; a eutectic material layer is disposed on the second surface of the thermally conductive metal layer; a conductive layer overlying the first surface of the thermally conductive metal layer; and a light emitting diode chip embedded on the conductive layer in the recess of the thermally conductive metal layer, wherein the light emitting diode chip comprises a first of different electrical properties Electrode and second electrode. In addition, the package structure of the LED component includes at least: a package base having a recess; the LED component is disposed in the recess; a first external electrode is electrically connected to the first electrode; The second external electrode is electrically connected to the second electrode.

According to a preferred embodiment of the present invention, the material of the eutectic material layer comprises gold (Au), tin (Sn), nickel (Ni), chromium (Cr), titanium (Ti), tantalum (Ta), aluminum ( One of Al), indium (In), or an alloy thereof.

In accordance with the purpose of the present invention, a method of fabricating a light emitting diode element and its package structure is provided. The method for manufacturing a light emitting diode device includes: disposing at least one light emitting diode chip on a blue film, and adhering one surface of the light emitting diode chip to the blue film; providing a transparent temporary substrate, wherein the transparent temporary The substrate has a first surface and a second surface opposite to each other; a photoresist layer is formed to cover the first surface of the transparent temporary substrate; and the light emitting diode wafer is pressed into the photoresist layer, wherein the light emitting diode chip comprises a light emitting structure And a first electrode is located on the light emitting structure, and the light emitting structure and the first electrode are buried in the photoresist layer; the blue film is removed, and part of the photoresist layer remains on the surface of the light emitting diode chip; An exposure step of the second surface of the substrate toward the first surface, wherein the remaining portion of the photoresist layer is not exposed during the exposing step; removing the remaining portion of the photoresist layer to completely expose the LED chip Forming a conductive layer covering the surface of the photoresist layer and the light emitting diode chip; plating a heat conductive metal layer on the conductive layer; forming a eutectic material layer on the heat conductive metal layer An upper surface; and removing the photoresist layer and the transparent substrate temporarily. The manufacturing method of the package structure of the light emitting diode component further comprises: providing a package base, wherein the package base has a recess; the above-mentioned light emitting diode wafer is disposed in the recess, and the eutectic material is provided The layer is directly bonded to the bottom surface of the recess; and electrically connecting the first electrode and the first external electrode, and the second electrode and the second external electrode of the LED component.

According to a preferred embodiment of the present invention, the material of the photoresist layer is a negative photoresist, and the thickness of the photoresist layer is preferably greater than 10 μm.

Please refer to FIG. 1 to FIG. 11A, which are cross-sectional views showing a process of a light emitting diode device according to a preferred embodiment of the present invention. In an exemplary embodiment, the blue film 100 is first provided, wherein the material of the blue film 100 is a high molecular polymer, and the blue film 100 may have a single-sided adhesive property or a double-sided adhesive property. In the present invention, the blue film 100 can replace the generally expensive acid-base tape, thereby greatly reducing the process cost. Next, one or more light emitting diode chips, such as a vertical electrode type light emitting diode chip 102a and a parallel electrode type light emitting diode chip 102b, are disposed on the blue film 100, and the light emitting diode chip 102a is disposed. The surface 104a and the surface 104b of the light-emitting diode wafer 102b are adhered to the blue film 100.

In one embodiment, the LED substrate 102a mainly includes a second electrode 112a, a conductive substrate 106a, a light emitting structure 108a and a first electrode 110a, wherein the first electrode 110a and the second electrode 112a have different electrical properties, such as One electrode is P-type and the other electrode is N-type. As shown in FIG. 1, in the LED wafer 102a, the conductive substrate 106a is stacked on the second electrode 112a, and the light-emitting structure 108a is formed on the conductive substrate 106a by, for example, epitaxial growth, the first electrode 110a. It is disposed on a portion of the light emitting structure 108a. The LED wafer 102a has a portion to be protected in a subsequent process, for example, extending downward from the first electrode 110a to the light emitting structure 108a, and the portion to be protected has a thickness 116a. On the other hand, the LED wafer 102b may include, for example, a substrate 106b, a light emitting structure 108b, a first electrode 110b, a second electrode 112b, and a selectively disposed first reflective layer 114, wherein the first electrode 110b and the second electrode 112b has different electrical properties, for example, one of the electrodes is P-type and the other electrode is N-type, and the first reflective layer 114 can be, for example, a Bragg Reflector (DBR). As shown in FIG. 1, in the light-emitting diode wafer 102b, the substrate 106b is stacked on the first reflective layer 114, and the light-emitting structure 108b can be formed by, for example, epitaxial growth and patterning techniques such as lithography etching. The second electrode 112b is formed on a portion of the surface 118 of the substrate 106b, and the second electrode 112b is disposed on another portion of the surface 118 of the substrate 106b. The first electrode 110b is disposed on a portion of the light emitting structure 108b. The LED wafer 102b has a portion to be protected in a subsequent process, for example, extending from the first electrode 110b down to the light emitting structure 108b, and the portion to be protected has a thickness 116b. The materials of the light-emitting diode chips 102a and 102b may be, for example, a gallium nitride (GaN) series, an aluminum gallium indium phosphide (AlGaInP) series, a lead sulfide (PbS) series, a tantalum carbide (SiC) series, or a bismuth (Si) series. Or gallium arsenide (GaAs) series.

Next, as shown in FIG. 2, a transparent temporary substrate 120 is provided, wherein the transparent temporary substrate 120 has opposing surfaces 122 and 124. The transparent temporary substrate 120 is preferably made of a material that allows the light of the exposure light source of the lithography process to penetrate smoothly, such as a material that allows ultraviolet light to penetrate. Next, the photoresist layer 126 is formed to be uniformly covered on the surface 122 of the transparent temporary substrate 120 by, for example, a coating method. In an exemplary embodiment, the material of the photoresist layer 126 may be, for example, a negative photoresist. The photoresist layer 126 should have a certain thickness. For example, the thickness 128 of the photoresist layer 126 can be greater than the thickness 116a of the light-emitting diode wafer 102a to be protected and the thickness 116b of the light-emitting diode wafer 102b to be protected by at least 10 μm. In an embodiment, the thickness of the photoresist layer 126 can be, for example, greater than 10 μm.

Next, as shown in FIG. 2, the LEDs 102a and 102b are inverted by the carrying of the blue film 100, and the LEDs 102a and 102b and the photoresist layer 126 on the transparent temporary substrate 120 are turned on. relatively. Next, as shown in FIG. 3, the LED chips 102a and 102b are pressed into the photoresist layer 126, and the depths 130 of the photodiode wafers 102a and 102b are pressed into the photoresist layer 126, wherein The depth 130 needs to be greater than the thicknesses 116a and 116b of the light-emitting diode wafers 102a and 102b to be protected. In an embodiment, the depth 130 of the press-in can be, for example, between substantially 10 μm and substantially 100 μm. After the light-emitting diode wafer 102a is pressed into the photoresist layer 126, the first electrode 110a and the light-emitting structure 108a of the light-emitting diode wafer 102a are completely buried in the photoresist layer 126. In addition, after the light-emitting diode wafer 102b is pressed into the photoresist layer 126, the first electrode 110b, the light-emitting structure 108b, and the second electrode 112b of the light-emitting diode wafer 102b are completely buried in the photoresist layer 126.

Next, the blue film 100 is torn off, and the photoresist layer 126 is selectively baked according to process requirements to facilitate fixing the LED chips 102a and 102b. When the blue film 100 is torn off, the blue film 100 may bring up a portion of the surface area of the photoresist layer 126, so that a portion of the photoresist portion 126 remains on the surface 104a and the light-emitting diode of the light-emitting diode wafer 102a. The surface 104b of the bulk wafer 102b is as shown in Fig. 4. In an exemplary embodiment, to avoid the presence of residual portions 132 of the photoresist layer 126, the adhesion between the LED arrays 102a and 102b and the subsequently formed material layers on the surfaces 104a and 104b is reduced. The remaining portion 132 of the photoresist layer 126 remaining on the surfaces 104a and 104b of the LED chips 102a and 102b is removed. Therefore, as shown in FIG. 5, the back exposure step is first performed to perform an exposure step from the surface 124 of the transparent temporary substrate 120 toward the opposite surface 122. In this exposure step, the residual portion 132 of the photoresist layer 126 is shielded by the LED chips 102a and 102b and thus is not exposed. Next, a developing step is performed in which the portion 132 remaining on the surfaces 104a and 104b of the light-emitting diode wafers 102a and 102b is not exposed by the photoresist layer 126, so that the developer can be smoothly removed and completely exposed. The surfaces 104a and 104b of the photodiode wafers 102a and 102b are as shown in Fig. 6. In one embodiment, after the developing step, a cleaning and baking process can be selectively performed to remove residual photoresist particles and soil.

Next, as shown in FIG. 7, in an exemplary embodiment, the conductive layer 134 may be formed over the photoresist layer by, for example, an evaporation method, a sputtering method, or an electroless plating method. 126 and the surfaces 104a and 104b of the LED chips 102a and 102b. The conductive layer 134 can be fabricated in a conformal deposition manner. The conductive layer 134 may be a composite structural layer formed by stacking at least two material layers, or may be an alloy layer. The material of the conductive layer 134 can be, for example, indium tin oxide (ITO), gold, silver, platinum (Pt), palladium, nickel, chromium, titanium, tantalum, aluminum, indium, tungsten, copper, alloy containing nickel, chromium-containing Alloys, alloys containing titanium, alloys containing niobium, alloys containing aluminum, alloys containing indium, alloys containing tungsten, or alloys containing copper. In an embodiment, the thickness of the conductive layer 134 can be, for example, less than substantially 3 μm. In some embodiments, after the residual portion 132 of the photoresist layer 126 is removed, but before the conductive layer 134 is formed, a buffer layer (not shown) may be selectively formed to cover the photoresist layer 126 and the light emitting diode. The surfaces 104a and 104b of the bulk wafers 102a and 102b are then formed with a conductive layer 134 to enhance the adhesion between the conductive layer 134 and the LED wafers 102a and 102b. The material of the buffer layer may be, for example, titanium nitride or aluminum nitride.

Next, as shown in FIG. 8, the thermally conductive metal layer 136 is formed on the conductive layer 134 by electroplating, wherein the thermally conductive metal layer 136 is preferably of a thickness to facilitate heat dissipation of the LED wafers 102a and 102b. . In an exemplary embodiment, the thickness of the thermally conductive metal layer 136 can be, for example, between substantially 50 μm and substantially 500 μm. The material of the heat conductive metal layer 136 may be, for example, copper, a copper alloy, an iron-nickel alloy (Fe/Ni), nickel, tungsten (W), molybdenum (Mo), or an alloy of any two or more of the above metals. The thermally conductive metal layer 136 has opposing surfaces 138 and 140, wherein the surface of the photoresist layer 102 is protruded from the surface of the photoresist layer 126, and the surface 138 bonded to the conductive layer 134 has a recess 142, and the light emitting diode The body wafers 102a and 102b are embedded on the conductive layer 134 in the recess 142 of the thermally conductive metal layer 136. In an embodiment, after the electroplating of the thermally conductive metal layer 136 is completed, the surface 138 of the thermally conductive metal layer 136 may be additionally subjected to a grinding step according to actual process requirements to reduce the roughness of the surface 138 of the thermally conductive metal layer 136. Subsequently formed material layers are smoothly disposed on this surface 138. In an embodiment, the roughness of the surface 138 of the thermally conductive metal layer 136 may be, for example, substantially 80 after the grinding step. Between 1 μm and parenchyma.

Next, as shown in FIG. 9, a eutectic material layer 144 is formed on the surface 138 of the thermally conductive metal layer 136 by, for example, an evaporation method, a sputtering method, an electroless plating method, or an electroplating method, wherein the eutectic material layer 144 has a relative Surfaces 146 and 148, while surface 146 of eutectic material layer 144 is directly bonded to surface 138 of thermally conductive metal layer 136. The eutectic material layer 144 may be, for example, a composite structural layer in which at least two material layers are stacked, or may be an alloy layer. The material of the eutectic material layer 144 may, for example, comprise one of gold, tin, nickel, chromium, titanium, tantalum, aluminum, indium, or alloys thereof. In one embodiment, the thickness of the eutectic material layer 144 can be, for example, less than substantially 6 [mu]m.

Next, as shown in FIG. 10, the photoresist layer 126 and the transparent temporary substrate 120 bonded thereto may be removed by, for example, a lift-off method by dissolving the photoresist layer 126 by an organic solvent. The first electrode 110a and the light emitting structure 108a of the light emitting diode wafer 102a, the first electrode 110b of the light emitting diode wafer 102b, the second electrode 112b and the light emitting structure 108b, and a portion of the conductive layer 134 are exposed. Then, the dicing of the dies can be performed to separate the illuminating diode chips 102a and 102b, thereby completing the illuminating diode element 150a as shown in FIG. 11A and the illuminating diode element 150b shown in FIG. 11B. Production.

Next, the package process of the light-emitting diode elements 150a and 150b can be performed. In an exemplary embodiment, as shown in FIG. 12A, when the package process of the light-emitting diode element 150a is performed, a package base 152 may be provided, wherein the package base 152 may be composed of an insulating material. Package base 152 can include a recess 158. In one embodiment, the side of the recess 158 of the package base 152 can be selectively provided with a second reflective layer 170 to illuminate the lateral light emitted by the LED component 150a toward the LED component 150a. Forward reflection. Next, the light emitting diode element 150a is disposed in the recess 158 of the package base 152, and the surface 148 of the eutectic material layer 144 is directly bonded to the bottom surface 160 of the recess 158. The first electrode 110a and the second electrode 112a of the LED wafer 102a are electrically connected to the first external electrode 156a and the second external electrode 154a, respectively. In an exemplary embodiment, the first external electrode 156a and the second external electrode 154a may be embedded in the package base 152, for example, and extend on the outer side of the package base 152, wherein a portion of the first external electrode 156a and a portion thereof The second outer electrode 154a can extend to be exposed in the bottom surface 160 of the recess 158. Therefore, when the light emitting diode element 150a is disposed in the recess 158 of the package base 152, the light emitting diode element 150a can be placed on the exposed portion of the second outer electrode 154a in the bottom surface 160 of the recess 158, and The surface 148 of the eutectic material layer 144 and the exposed portion of the second external electrode 154a are directly eutectic bonded by infrared heating, furnace tube heating or rapid thermal annealing to form a eutectic layer 144a, thereby illuminating The second electrode 112a of the diode wafer 102a is electrically connected to the second external electrode 154a via the lower conductive layer 134, the thermally conductive metal layer 136, and the eutectic layer 144a. The material of the eutectic layer 144a may include, for example, one of gold, tin, nickel, chromium, titanium, tantalum, aluminum, indium, or an alloy thereof, and the thickness of the eutectic layer 144a may be, for example, less than substantially 6 μm. On the other hand, when the first electrode 110a and the first external electrode 156a of the light-emitting diode wafer 102a are electrically connected, the wire 162 can be electrically connected by wire bonding. Then, the encapsulant 168 can be formed to fill the recess 158 of the package base 152, and the encapsulant 168 covers the LED body 150a, the wire 162, the first external electrode 156a and the second external portion in the recess 158. The electrode 154a completes the package structure 172a of the light-emitting diode element 150a.

In another exemplary embodiment, as shown in FIG. 12B, when the package process of the light emitting diode element 150b is performed, the package base 152 including the recess 158 may also be provided. In an embodiment, the side of the recess 158 of the package base 152 is also selectively provided with a second reflective layer 170 to facilitate lateral reflection of the lateral light toward the LED component 150b. Next, the light emitting diode element 150b is disposed in the recess 158 of the package base 152, and the surface 148 of the eutectic material layer 144 is directly bonded to the bottom surface 160 of the recess 158. The first and second electrodes 110b and 112b of the light-emitting diode 102b are electrically connected to the first and second external electrodes 156b and 154b, respectively, by wire bonding. In an exemplary embodiment, the first external electrode 156b and the second external electrode 154b may be embedded in the package base 152, for example, and extend on the outer side of the package base 152, wherein a portion of the first external electrode 156b and a portion thereof The second outer electrode 154b can extend to be exposed in the bottom surface 160 of the recess 158. Therefore, when the light emitting diode element 150b is disposed in the recess 158 of the package base 152, the light emitting diode element 150b can be placed on the exposed portion of the first outer electrode 156b in the bottom surface 160 of the recess 158, and The surface 148 of the eutectic material layer 144 is directly eutectic bonded to the exposed portion of the first external electrode 156b by infrared heating, furnace tube heating or rapid thermal annealing to form a eutectic layer 144a to enhance the light emitting diode element. The bonding force between the 150b and the package base 152 increases the heat dissipation efficiency of the light emitting diode element 150b. Then, the encapsulant 168 can be formed to fill the recess 158 of the package base 152, and the encapsulant 168 covers the LED component 150b, the wires 164 and 166, the first external electrode 156b and the first in the recess 158. The outer electrode 154b completes the package structure 172b of the light emitting diode element 150b.

It can be seen from the above embodiments of the present invention that one of the advantages of the present invention is that in the light-emitting diode element of the present invention and the method of manufacturing the same, it is possible to make the light-emitting diode without using silver glue or using an acid-resistant tape. The body wafer is bonded to the heat dissipation metal layer, so that the heat dissipation performance of the light emitting diode component can be greatly improved, and the process cost can be effectively reduced.

It can be seen from the above embodiments of the present invention that another advantage of the present invention is that in the light-emitting diode element of the present invention and the method of manufacturing the same, the photoresist layer used in the manufacturing process can not only effectively protect the light-emitting diode The light-emitting structure of the chip and the electrode help to control the depth of the light-emitting diode chip embedded in the heat-dissipating metal layer, thereby preventing the light-emitting diode chip from being damaged in the subsequent metal plating process, and greatly improving the process yield. And can meet the application of side light emitting diode products.

According to the embodiment of the present invention, another advantage of the present invention is that, in the package structure of the light-emitting diode element of the present invention and the manufacturing method thereof, the bottom of the light-emitting diode element is provided with a eutectic material layer. Therefore, the heat dissipation metal layer at the bottom of the element can be fixed to the package base by using a eutectic material layer and forming a eutectic layer by low-temperature heating such as infrared rays. Therefore, the long-term high-temperature curing process of the conventional bonding component and the colloid of the package base can be avoided to cause thermal damage of the LED film, and the eutectic material layer can also reduce the thermal resistance and improve the heat dissipation effect, and is more satisfied. The existing package base does not require a thermoelectric design to change the package base, which is advantageous for mass production and application.

Although the present invention has been described above in terms of a preferred embodiment, it is not intended to limit the invention, and it is intended that various modifications may be made without departing from the spirit and scope of the invention. And the scope of the present invention is defined by the scope of the appended claims.

100. . . Blue film

102a. . . Light-emitting diode chip

102b. . . Light-emitting diode chip

104a. . . surface

104b. . . surface

106a. . . Conductive substrate

106b. . . Substrate

108a. . . Light structure

108b. . . Light structure

110a. . . First electrode

110b. . . First electrode

112a. . . Second electrode

112b. . . Second electrode

114. . . First reflective layer

116a. . . thickness

116b. . . thickness

118. . . surface

120. . . Transparent temporary substrate

122. . . surface

124. . . surface

126. . . Photoresist layer

128. . . thickness

130. . . depth

132. . . section

134. . . Conductive layer

136. . . Thermally conductive metal layer

138. . . surface

140. . . surface

142. . . Depression

144. . . Eutectic material layer

144a. . . Eutectic layer

146. . . surface

148. . . surface

150a. . . Light-emitting diode component

150b. . . Light-emitting diode component

152. . . Package base

154a. . . Second external electrode

154b. . . Second external electrode

156a. . . First external electrode

156b. . . First external electrode

158. . . Groove

160. . . Bottom

162. . . wire

164. . . wire

166. . . wire

168. . . Encapsulant

170. . . Second reflective layer

172a. . . Package structure

172b. . . Package structure

1 to 11A are cross-sectional views showing a process of a light emitting diode device in accordance with a preferred embodiment of the present invention.

Figure 11B is a cross-sectional view showing a light emitting diode element in accordance with another preferred embodiment of the present invention.

12A is a cross-sectional view showing a package structure of a light emitting diode device in accordance with a preferred embodiment of the present invention.

Figure 12B is a cross-sectional view showing a package structure of a light emitting diode element in accordance with another preferred embodiment of the present invention.

102a. . . Light-emitting diode chip

110a. . . First electrode

112a. . . Second electrode

134. . . Conductive layer

136. . . Thermally conductive metal layer

144a. . . Eutectic layer

148. . . surface

150a. . . Light-emitting diode component

152. . . Package base

154a. . . Second external electrode

156a. . . First external electrode

158. . . Groove

160. . . Bottom

162. . . wire

168. . . Encapsulant

170. . . Second reflective layer

172a. . . Package structure

Claims (81)

An illuminating diode component comprising: at least one thermally conductive metal layer having a first surface and a second surface; and the first surface of the thermally conductive metal layer comprises a recess; a eutectic layer is disposed on a second surface of the thermally conductive metal layer; a conductive layer overlying the first surface of the thermally conductive metal layer; and a light emitting diode wafer embedded in the recess of the thermally conductive metal layer On the layer, the light emitting diode chip comprises a first electrode and a second electrode having different electrical properties. The light emitting diode device of claim 1, wherein the light emitting diode chip further comprises: a substrate; and a light emitting structure disposed on a first portion of one surface of the substrate, wherein the first An electrode is disposed on a portion of the light emitting structure, and the second electrode is disposed on a second portion of the surface of the substrate. The light-emitting diode device of claim 1, wherein the light-emitting diode chip further comprises: a conductive substrate disposed on the second electrode; and a light-emitting structure disposed on the conductive substrate The first electrode is disposed on a portion of the light emitting structure. The light-emitting diode component of claim 1, further comprising a buffer layer interposed between the conductive layer and the light-emitting diode wafer. The light-emitting diode element according to claim 4, wherein the buffer layer is made of titanium nitride or aluminum nitride. The light-emitting diode element according to claim 1, wherein the material of the eutectic layer is a composite structural layer or an alloy layer. The light-emitting diode element according to claim 1, wherein the material of the eutectic material layer comprises gold (Au), tin (Sn), nickel (Ni), chromium (Cr), titanium (Ti), One of tantalum (Ta), aluminum (Al), indium (In), or an alloy thereof. The light-emitting diode element according to claim 1, wherein the thickness of the eutectic material layer is less than substantially 6 μm. The light-emitting diode element according to claim 1, wherein the material of the heat conductive metal layer is copper, copper alloy, iron-nickel alloy (Fe/Ni), nickel, tungsten (W), molybdenum (Mo), Or its alloy. The illuminating diode component of claim 1, wherein the thickness of the thermally conductive metal layer is between substantially 50 μm and substantially 500 μm. The illuminating diode component of claim 1, wherein the second surface of the thermally conductive metal layer has a roughness of substantially 80 Between 1 μm and parenchyma. The light-emitting diode component of claim 1, wherein the conductive layer is a composite structural layer or an alloy layer. The luminescent diode component of claim 1, wherein the conductive layer is made of indium tin oxide (ITO), gold, silver, platinum (Pt), palladium, nickel, chromium, titanium, tantalum, aluminum. Indium, tungsten, copper, nickel-containing alloys, chromium-containing alloys, titanium-containing alloys, niobium-containing alloys, aluminum-containing alloys, indium-containing alloys, tungsten-containing alloys, or copper-containing alloys. The light-emitting diode element according to claim 1, wherein the conductive layer has a thickness of less than substantially 3 μm. A package structure of a light-emitting diode component, comprising: a package base having a recess; a light-emitting diode component disposed in the recess, wherein the light-emitting diode component comprises: a thermally conductive metal layer Having a first surface and a second surface, and the first surface of the thermally conductive metal layer includes a recess; a eutectic layer disposed on the second surface of the thermally conductive metal layer and the recess One of the bottom surfaces is directly bonded; a conductive layer covering the first surface of the thermally conductive metal layer; and a light emitting diode wafer embedded on the conductive layer in the recess of the thermally conductive metal layer, wherein The LED chip includes a first electrode and a second electrode having different electrical properties; a first external electrode electrically connected to the first electrode; and a second external electrode electrically coupled to the second electrode Sexual connection. The package structure of the light-emitting diode device of claim 15, wherein the light-emitting diode chip further comprises: a substrate; and a light-emitting structure disposed on the first portion of one of the surfaces of the substrate, The first electrode is disposed on a portion of the light emitting structure, and the second electrode is disposed on a second portion of the surface of the substrate. The package structure of the light-emitting diode element according to claim 16, further comprising at least two wires respectively connecting the first electrode and the first external electrode, and the second electrode and the second external electrode. The package structure of the light-emitting diode device of claim 15, wherein the light-emitting diode chip further comprises: a conductive substrate disposed on the second electrode; and a light-emitting structure disposed on the conductive On the substrate, the first electrode is disposed on a portion of the light emitting structure. The package structure of the light-emitting diode element according to claim 18, further comprising at least one wire connecting the first electrode and the first external electrode, wherein the second external electrode is located on the bottom surface of the groove, And the layer of eutectic material is directly bonded to the second external electrode. The package structure of the light-emitting diode element according to claim 15, wherein the light-emitting diode element further comprises a buffer layer interposed between the conductive layer and the light-emitting diode chip. The package structure of the light-emitting diode element according to claim 20, wherein the buffer layer is made of titanium nitride or aluminum nitride. The package structure of the light-emitting diode element according to claim 15, wherein the material of the eutectic layer is a composite structure layer or an alloy layer. The package structure of the light-emitting diode element according to claim 15, wherein the material of the eutectic layer comprises one of gold, tin, nickel, chromium, titanium, tantalum, aluminum, indium, or an alloy thereof. The package structure of the light-emitting diode element according to claim 15, wherein the thickness of the eutectic layer is less than substantially 6 μm. The package structure of the light-emitting diode element according to claim 15, wherein the material of the heat conductive metal layer is copper, a copper alloy, an iron-nickel alloy, nickel, tungsten, molybdenum, or an alloy thereof. The package structure of the light-emitting diode element according to claim 15, wherein the thickness of the heat conductive metal layer is between substantially 50 μm and substantially 500 μm. The package structure of the light-emitting diode element according to claim 15, wherein the roughness of the second surface of the heat conductive metal layer is substantially 80 Between 1 μm and parenchyma. The package structure of the light-emitting diode element according to claim 15, wherein the conductive layer is a composite structure layer or an alloy layer. The package structure of the light-emitting diode element according to claim 15, wherein the material of the conductive layer is indium tin oxide, gold, silver, platinum, palladium, nickel, chromium, titanium, tantalum, aluminum, indium, Tungsten, copper, nickel-containing alloys, chromium-containing alloys, titanium-containing alloys, niobium-containing alloys, aluminum-containing alloys, indium-containing alloys, tungsten-containing alloys, or copper-containing alloys. The package structure of the light-emitting diode element according to claim 15, wherein the thickness of the conductive layer is less than substantially 3 μm. The package structure of the LED component of claim 15 further comprising an encapsulant filled in the recess of the package base and covering the LED component. The package structure of the light emitting diode device of claim 15, wherein the first outer electrode and the second outer electrode are embedded in the package base. A method for manufacturing a light emitting diode device, comprising: disposing at least one light emitting diode chip on a blue film, and adhering one surface of the light emitting diode chip to the blue film; providing a transparent temporary substrate The transparent temporary substrate has a first surface and a second surface opposite to each other; a photoresist layer is formed to cover the first surface of the transparent temporary substrate; and the light emitting diode wafer is pressed into the photoresist layer The light emitting diode chip includes a light emitting structure, and a first electrode is disposed on the light emitting structure, and the light emitting structure and the first electrode are embedded in the photoresist layer; the blue film is removed, and a portion thereof is The photoresist layer remains on the surface of the light emitting diode chip; an exposure step is performed from the second surface of the transparent temporary substrate toward the first surface, wherein the residual portion of the photoresist layer is not Exposing in the exposing step; removing the residual portion of the photoresist layer to completely expose the surface of the LED chip; forming a conductive layer overlying the photoresist layer and the LED chip The upper surface; a thermally conductive metal plating layer on the conductive layer; total crystal material layer formed on one surface of the thermally conductive metal layer; and removing the photoresist layer and the transparent substrate temporarily. The method of manufacturing a light-emitting diode element according to claim 33, wherein the material of the photoresist layer is a negative photoresist. The method of manufacturing a light-emitting diode element according to claim 33, wherein the thickness of the photoresist layer is greater than 10 μm. The method for manufacturing a light-emitting diode element according to claim 33, wherein the light-emitting diode wafer is pressed into the photoresist layer to a depth of between substantially 10 μm and substantially 100 μm. The method of manufacturing a light-emitting diode device according to claim 33, wherein the light-emitting diode chip further comprises: a substrate, wherein the light-emitting structure is disposed on a first portion of one surface of the substrate; A second electrode is disposed on a second portion of the surface of the substrate, wherein the second electrode is electrically different from the first electrode. The method for manufacturing a light-emitting diode device according to claim 37, wherein the step of pressing the light-emitting diode wafer in the photoresist layer further comprises embedding the second electrode in the photoresist layer. in. The method of manufacturing the illuminating diode device of claim 33, wherein the illuminating diode chip further comprises: a second electrode, wherein the second electrode and the first electrode have different electrical properties; A conductive substrate is disposed on the second electrode, wherein the light emitting structure is disposed on the conductive substrate. The method for manufacturing a light-emitting diode element according to claim 33, further comprising: forming a buffer layer covering the step of removing the residual portion of the photoresist layer and forming the conductive layer The photoresist layer and the surface of the light emitting diode chip. The method for manufacturing a light-emitting diode element according to claim 40, wherein the material of the buffer layer is titanium nitride or aluminum nitride. The method for manufacturing a light-emitting diode element according to claim 33, wherein the step of forming the conductive layer is performed by an evaporation method, a sputtering method, or an electroless plating method. The method for manufacturing a light-emitting diode element according to claim 33, wherein the conductive layer is a composite structural layer or an alloy layer. The method for manufacturing a light-emitting diode element according to claim 33, wherein the conductive layer is made of indium tin oxide, gold, silver, platinum, palladium, nickel, chromium, titanium, tantalum, aluminum, indium, Tungsten, copper, nickel-containing alloys, chromium-containing alloys, titanium-containing alloys, niobium-containing alloys, aluminum-containing alloys, indium-containing alloys, tungsten-containing alloys, or copper-containing alloys. The method of manufacturing a light-emitting diode element according to claim 33, wherein the conductive layer has a thickness of less than substantially 3 μm. The method for manufacturing a light-emitting diode element according to claim 33, wherein the material of the heat conductive metal layer is copper, a copper alloy, an iron-nickel alloy, nickel, tungsten, molybdenum, or an alloy thereof. The method of manufacturing a light-emitting diode element according to claim 33, wherein the thickness of the heat conductive metal layer is between substantially 50 μm and substantially 500 μm. The method for manufacturing a light-emitting diode element according to claim 33, wherein the step of plating the thermally conductive metal layer and the step of forming the layer of the eutectic material further comprises at least the surface of the thermally conductive metal layer A grinding step is performed. The method for manufacturing a light-emitting diode element according to claim 48, wherein after the grinding step, the surface roughness of the thermally conductive metal layer is substantially 80 Between 1 μm and parenchyma. The method for fabricating a light-emitting diode element according to claim 33, wherein the step of forming the eutectic material layer is performed by an evaporation method, a sputtering method, an electroless plating method, or an electroplating method. The method of manufacturing a light-emitting diode element according to claim 33, wherein the eutectic material layer is a composite structural layer or an alloy layer. The method for manufacturing a light-emitting diode element according to claim 33, wherein the material of the eutectic material layer comprises one of gold, tin, nickel, chromium, titanium, tantalum, aluminum, indium, or an alloy thereof. . The method of manufacturing a light-emitting diode element according to claim 33, wherein the thickness of the eutectic material layer is less than substantially 6 μm. The method of manufacturing a light-emitting diode element according to claim 33, wherein the step of removing the photoresist layer and the transparent temporary substrate utilizes a lift-off method. A method for manufacturing a package structure of a light-emitting diode component, comprising: forming a light-emitting diode component, at least comprising: disposing at least one light-emitting diode chip on a blue film, and causing the light-emitting diode chip to a surface is adhered to the blue film; a transparent temporary substrate is provided, wherein the transparent temporary substrate has a first surface and a second surface; and a photoresist layer is formed to cover the first surface of the transparent temporary substrate; The light emitting diode chip is pressed into the photoresist layer, wherein the light emitting diode chip comprises a light emitting structure, a first electrode is located on the light emitting structure, and a second electrode, the second electrode and the first electrode An electrode has different electrical properties, and the light emitting structure and the first electrode are embedded in the photoresist layer; the blue film is removed, and a portion of the photoresist layer remains on the surface of the LED chip; And exposing an exposure step from the second surface of the transparent temporary substrate toward the first surface, wherein the remaining portion of the photoresist layer is not exposed in the exposing step; removing the residue of the photoresist layer And completely exposing the surface of the light-emitting diode wafer; forming a conductive layer covering the photoresist layer and the surface of the light-emitting diode wafer; plating a thermal conductive metal layer on the conductive layer; forming a eutectic material layer on one surface of the thermally conductive metal layer; and removing the photoresist layer and the transparent temporary substrate; providing a package pedestal, wherein the package pedestal has a recess; the illuminating diode chip Provided in the recess, and directly bonding the eutectic material layer to a bottom surface of the recess; and electrically connecting the first electrode and a first external electrode, and the second electrode and a second external electrode . The method of manufacturing a package structure for a light-emitting diode element according to claim 55, wherein the material of the photoresist layer is a negative photoresist. The method of fabricating a package structure for a light-emitting diode element according to claim 55, wherein the photoresist layer has a thickness greater than 10 μm. The method of manufacturing a package structure for a light-emitting diode element according to claim 55, wherein the light-emitting diode wafer is pressed into the photoresist layer to a depth of between substantially 10 μm and substantially 100 μm. The method of manufacturing a package structure for a light-emitting diode device according to claim 55, wherein the light-emitting diode chip further comprises: a reflective layer; and a substrate disposed on the reflective layer, wherein the light-emitting layer The structure is disposed on a first portion of one surface of the substrate, and the second electrode is disposed on a second portion of the surface of the substrate. The method of manufacturing a package structure for a light-emitting diode device according to claim 59, wherein the step of pressing the light-emitting diode chip in the photoresist layer further comprises embedding the second electrode in the In the photoresist layer. The method for manufacturing a package structure of a light-emitting diode device according to claim 59, wherein the step of electrically connecting the first electrode and a first external electrode, and the second electrode and a second external electrode The system utilizes two wires. The method of manufacturing a package structure for a light-emitting diode device according to claim 55, wherein the light-emitting diode chip further comprises: a conductive substrate disposed on the second electrode; and a light-emitting structure On the conductive substrate, the first electrode is disposed on a portion of the light emitting structure. The method of manufacturing a package structure for a light-emitting diode device according to claim 62, wherein electrically connecting the first electrode and a first external electrode utilizes a wire, and the second external electrode is located The bottom surface of the recess, the eutectic material layer is directly bonded to the second external electrode. The method for manufacturing a package structure of a light-emitting diode element according to claim 63, wherein the bonding of the eutectic material layer and the second external electrode is performed by an infrared heating method, a furnace tube heating method or a Rapid thermal annealing. The method of fabricating a package structure for a light-emitting diode element according to claim 55, wherein the step of forming the conductive layer is performed between the step of removing the residual portion of the photoresist layer and the step of forming the conductive layer The step of the polar body component further includes forming a buffer layer overlying the photoresist layer and the surface of the light emitting diode chip. The method of manufacturing a package structure for a light-emitting diode element according to claim 65, wherein the material of the buffer layer is titanium nitride or aluminum nitride. The method for fabricating a package structure for a light-emitting diode element according to claim 55, wherein the step of forming the conductive layer is performed by an evaporation method, a sputtering method, or an electroless plating method. The method of manufacturing a package structure for a light-emitting diode element according to claim 55, wherein the conductive layer is a composite structure layer or an alloy layer. The manufacturing method of the package structure of the light-emitting diode element according to claim 55, wherein the material of the conductive layer is indium tin oxide, gold, silver, platinum, palladium, nickel, chromium, titanium, tantalum, aluminum. Indium, tungsten, copper, nickel-containing alloys, chromium-containing alloys, titanium-containing alloys, niobium-containing alloys, aluminum-containing alloys, indium-containing alloys, tungsten-containing alloys, or copper-containing alloys. The method of manufacturing a package structure for a light-emitting diode element according to claim 55, wherein the thickness of the conductive layer is less than substantially 3 μm. The method for manufacturing a package structure for a light-emitting diode element according to claim 55, wherein the material of the heat conductive metal layer is copper, a copper alloy, an iron-nickel alloy, nickel, tungsten, molybdenum, or an alloy thereof. The method of manufacturing a package structure for a light-emitting diode element according to claim 55, wherein the thickness of the heat conductive metal layer is between substantially 50 μm and substantially 500 μm. The method of fabricating a package structure for a light-emitting diode element according to claim 55, wherein the step of forming the thermally conductive metal layer and the step of forming the layer of the eutectic material form the light-emitting diode element The step further includes at least a step of grinding the surface of the thermally conductive metal layer. The manufacturing method of the package structure of the light-emitting diode element according to claim 73, wherein the surface roughness of the heat conductive metal layer is substantially 80 after the grinding step Between 1 μm and parenchyma. The method for manufacturing a package structure of a light-emitting diode element according to claim 55, wherein the step of forming the eutectic material layer is performed by a vapor deposition method, a sputtering method, an electroless plating method, or a Electroplating method. The method for fabricating a package structure for a light-emitting diode element according to claim 55, wherein the eutectic material layer is a composite structure layer or an alloy layer. The method for manufacturing a package structure of a light-emitting diode element according to claim 55, wherein the material of the eutectic material layer comprises gold, tin, nickel, chromium, titanium, tantalum, aluminum, indium, or an alloy thereof one of them. The method of fabricating a package structure for a light-emitting diode element according to claim 55, wherein the thickness of the eutectic material layer is less than substantially 6 μm. The method of manufacturing a package structure for a light-emitting diode element according to claim 55, wherein the step of removing the photoresist layer and the transparent temporary substrate utilizes a lift-off method. The method for manufacturing a package structure of a light-emitting diode device according to claim 55, wherein the step of electrically connecting the first electrode and a first external electrode, and the second electrode and a second external electrode Thereafter, the method further comprises forming a package colloid filling the recess of the package base and covering the LED component. The method of fabricating a package structure for a light-emitting diode element according to claim 55, wherein the first external electrode and the second external electrode are embedded in the package base.