CN102645454A - Planar-type acetylene gas sensor with nanofiber sensitive layer - Google Patents
Planar-type acetylene gas sensor with nanofiber sensitive layer Download PDFInfo
- Publication number
- CN102645454A CN102645454A CN2012100910351A CN201210091035A CN102645454A CN 102645454 A CN102645454 A CN 102645454A CN 2012100910351 A CN2012100910351 A CN 2012100910351A CN 201210091035 A CN201210091035 A CN 201210091035A CN 102645454 A CN102645454 A CN 102645454A
- Authority
- CN
- China
- Prior art keywords
- acetylene gas
- nanofiber
- sensitive layer
- gas sensor
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The invention relates to a planar-type acetylene gas sensor with a nanofiber sensitive layer, belonging to the technical field of gas sensors. The gas sensitive material refers to stannic oxide doped nanofiber with high selectivity to the acetylene gas. In the prior art, no acetylene gas sensor with nanofiber gas sensitive materials is available. A heating electrode and a signal electrode are respectively distributed on the insulating layers on the two sides of a silicon substrate of the acetylene gas sensor; the acetylene gas sensitive layer is arranged on the signal electrode and in the form of SnO2 nanofiber web; and the gas sensitive material refers to SnO2 doped with In, Sm and Co, wherein the In, Sm and Co respectively account for 5-7%, 43-45% and 1-2% of the total mass of four oxides of In2O3, Sm2O3, Co3O4 and SnO2. The planar-type acetylene gas sensor with a nanofiber sensitive layer can realize one-line all-weather multi-point acetylene gas exploration.
Description
Technical field
The present invention relates to a kind of plane formula acetylene gas sensor with nanofiber sensitive layer, gas sensitive is the doped stannic oxide nanometer fiber, has high selectivity for acetylene gas, belongs to the gas sensor technical field.
Background technology
Acetylene (C
2H
2) be a kind of flammable explosive gas, its lower explosive limit is 1.5%.Especially in the power industry field, the insulating oil in the oil-immersed power transformer can wear out and decompose the various low molecular hydrocarbon classes of generation, CO, CO gradually
2Deng gas, make transformer faults such as local overheating, shelf depreciation and arc discharge occur.In the various low molecular hydrocarbon classes, acetylene is the characteristic gas of discharge-type fault and hyperthermia and superheating type fault, therefore, is necessary the round-the-clock monitoring concentration of acetylene of a line.Yet existing acetylene detection method such as vapor-phase chromatography assist the method for grinding can not adapt to this needs with electricity.
Gas sensor is that information translation one-tenth such as a kind of composition with gas, concentration can be by the device of the information of utilizations such as personnel, instrument and meter, computing machine.Wherein, with the silicon chip be that micro plane-type gas sensor that substrate adopts semiconductor technology to make has also that manufacture craft is simple, batch process, advantage such as with low cost, can satisfy the round-the-clock multiple spot of a line inflammable and explosive, toxic and harmful and detect.Said its structure of plane type gas sensor that with the silicon chip is substrate is made does, the silicon chip substrate both sides have insulation course, the heating electrode that on a side insulation layer, distributes, and distribution signal electrode on the opposite side insulation course, gas sensing layer is overlying on the signal electrode.Survey seized gas by gas sensing layer, by signal electrode output testing result.
The nanofiber major diameter ratio that adopts method of electrostatic spinning to obtain is big, specific surface area is high; And can be formed naturally reticulate texture; Adopt the gas sensitivity of nanometer fibre gas-sensitive material high, respond and recover fast, be used for detecting the gas of ethanol, toluene, acetone, hydrogen and so on.But, occur to adopt the acetylene gas sensor of nanometer fibre gas-sensitive material in the prior art as yet.
Summary of the invention
The objective of the invention is to; Obtain a kind of acetylene gas sensor; This sensor can adopt semiconductor technology to make, and price is low, but highly sensitive, response recovers fast; Thereby can be applicable to the round-the-clock multiple spot acetylene gas detection of a line, we have invented a kind of plane formula acetylene gas sensor with nanofiber sensitive layer for this reason.
The present invention's the plane formula acetylene gas sensor with nanofiber sensitive layer is furnished with heating electrode and signal electrode respectively on silicon substrate two side insulation layers, it is characterized in that the acetylene gas sensitive layer is positioned on the signal electrode, and acetylene gas sensitive layer form is SnO
2Nanometer fiber net, gas sensitive is for mix the SnO of In, Sm, Co simultaneously
2, the incorporation of In, Sm, Co is respectively In
2O
3, Sm
2O
3, Co
3O
4, SnO
25～7%, 43～45%, 1～2% of four kinds of oxide gross masses.
The manufacturing process of the plane formula acetylene gas sensor with nanofiber sensitive layer through the present invention further specifies the present invention below.
1, in twin polishing<100>Grow SiO through thermal oxidation method on the silicon substrate of crystal orientation
2Following insulation course and last insulation course;
2, producing one group of Pt heating electrode through magnetron sputtering, photoetching, corrosion each item technology successively on the insulation course down, carry out high annealing subsequently;
3, on last insulation course, produce one group of Pt signal electrode through magnetron sputtering, photoetching, corrosion each item technology successively, each signal electrode is all corresponding up and down with a heating electrode in this group, carries out high annealing subsequently;
4, indium trichloride, samarium trichloride, cobalt nitrate, stannous chloride, dimethyl formamide (DMF), polyvinylpyrrolidone (PVP) and alcohol are mixed into the gas sensitive spinning liquid, adopt method of electrostatic spinning on signal electrode, to make precursor layer;
5, make precursor layer be converted into the acetylene gas sensitive layer through sintering, this acetylene gas sensitive layer is the nanometer fiber net form;
6, cutting silicon substrate, size is at 1 * 1mm
2To 10 * 10mm
2Between;
7, adopt Pt silk or Au silk as heating electrode lead-in wire and signal electrode lead-in wire, the heating electrode lead-in wire causes external feed circuit with heating electrode, and the signal electrode lead-in wire causes metering circuit with signal electrode, accomplishes the making of the present invention's sensor.
It is thus clear that the present invention's sensor belongs to a kind of micro plane-type gas sensor that adopts semiconductor technology to make, thereby makes the present invention's sensor to produce in batches, price is low.Mix the SnO of In, Sm, Co
2Gas sensitive for the sensitivity of acetylene far above other common inflammable and explosive, toxic and harmfuls; Add the form of acetylene gas sensitive layer nanometer fiber net; Make the present invention's sensor have the advantages that selectivity is strong, highly sensitive and the response recovery is fast, thereby can be applicable to the round-the-clock multiple spot acetylene gas detection of a line.
Description of drawings
Fig. 1 is the present invention's the plane formula acetylene gas sensor structural representation with nanofiber sensitive layer, and this figure double as is a Figure of abstract.Fig. 2 is the present invention's the plane formula acetylene gas sensor heating electrode figure with nanofiber sensitive layer.Fig. 3 is the present invention's the plane formula acetylene gas sensor signal electrode figure with nanofiber sensitive layer.Fig. 4 is that the present invention's the plane formula acetylene gas sensor with nanofiber sensitive layer is made process flow diagram.Fig. 5 is that the present invention's the plane formula acetylene gas sensor with nanofiber sensitive layer is heating current and sensitivity relation figure under the condition of 100ppm in acetylene gas concentration.Fig. 6 is that the present invention's the plane formula acetylene gas sensor with nanofiber sensitive layer is that 100ppm, heating current are the response recovery curve under the 80mA condition in acetylene gas concentration.Fig. 7 be the present invention's plane formula acetylene gas sensor with nanofiber sensitive layer under 80mA heating current condition its to the sensitivity of acetylene gas and the relation curve of acetylene gas concentration.Fig. 8 the present invention's the plane formula acetylene gas sensor with nanofiber sensitive layer is the sensitivity of the gas with various of 100ppm to concentration under 80mA heating current condition.
Embodiment
The present invention's the plane formula acetylene gas sensor with nanofiber sensitive layer promptly descends to be furnished with heating electrode 1 and signal electrode 5 on insulation course 2 and the last insulation course 4 respectively at 3 liang of side insulation layers of silicon substrate, sees shown in Figure 1.Acetylene gas sensitive layer 9 is positioned on the signal electrode 5, and acetylene gas sensitive layer 9 forms are SnO
2Nanometer fiber net, SnO
2Nanofiber mean diameter 50～200nm, length 1～10mm; Gas sensitive is for mix the SnO of In, Sm, Co simultaneously
2, the incorporation of In, Sm, Co is respectively In
2O
3, Sm
2O
3, Co
3O
4, SnO
25～7%, 43～45%, 1～2% of four kinds of oxide gross masses.Silicon substrate 3 is < 100>crystal orientation twin polishing silicon chip, and thickness is 0.2～3mm.Following insulation course 2 is SiO with last insulation course 4
2Layer, thickness is 50～200nm.Heating electrode 4 is a Pt film pattern electrode with signal electrode 5, and thickness is 50～200nm; Heating electrode 4 is snakelike, see shown in Figure 2, Pt film width 5 μ m to 0.5mm, resistance 1～100 Ω; Signal electrode 5 is an interdigitated, sees shown in Figure 3ly, and Pt film width is 5 μ m to 0.5mm, and single interdigital length is 0.5～20mm.Size sensor is at 1 * 1mm
2To 10 * 10mm
2Between.Adopt Pt silk or Au silk as heating electrode lead-in wire 10 and signal electrode lead-in wire 11, heating electrode lead-in wire 10 causes external feed circuit with heating electrode 1, and signal electrode lead-in wire 11 causes metering circuit with signal electrode 5.
Further specify the present invention's sensor below through more detailed manufacturing process, see shown in Figure 4.
1, in commercially available 4 inches twin polishing<100>On the thick silicon substrate 3 of crystal orientation 0.4mm, under 1000 ℃, go out the thick SiO of 100nm in the oxidation of the two sides of silicon substrate 3 respectively through thermal oxidation method
2Following insulation course 2 and last insulation course 4;
2, be sputtering source with the Pt target, plant capacity 120W, Ar compression ring border, air pressure 1Pa, 300 ℃ of underlayer temperatures with magnetron sputtering mode sputter 2h, are obtaining the Pt layer heating electrode layer that thickness is 100nm on the insulation course 2 down;
3, the GP18 photoresist is coated on the heating electrode layer 2400 rev/mins of whirl coating rotating speeds, 60 ℃ of preceding down baking 30min; Adopt snakelike mask plate; Uv-exposure 15s subsequently through developing also at 150 ℃ of baking 1h down, makes unexposed photoresist on insulation course down, 2 form snakelike electrode pattern;
4, using plasma etching technics etching 30min under 5PaAr atmosphere, plant capacity 90W, normal temperature process conditions removes and does not receive the Pt layer that photoresist is covered; Put into acetone soln then and soak 20min, remove residual photoresist, obtain heating electrode 1, the snakelike heating electrode 3Pt film width 0.25mm of making, length 100mm, resistance value 54 Ω;
5, at 600 ℃ of following annealing in process 10h, pass to N therebetween
2As blanket gas, make heating electrode 1 and silicon substrate 3 the two curing;
6, be sputtering source with the Pt target, plant capacity 120W, Ar compression ring border, air pressure 1Pa, 300 ℃ of underlayer temperatures with magnetron sputtering mode sputter 2h, obtain the Pt layer signal electrode layer that thickness is 100nm on last insulation course 4 surfaces;
7, the GP18 photoresist is coated on the signal electrode layer 2400 rev/mins of whirl coating rotating speeds, 60 ℃ of preceding down baking 30min; Adopt the interdigitated mask plate; Uv-exposure 15s through developing and toasting 1h down at 150 ℃, makes unexposed photoresist on last insulation course 4, form the interdigitated electrodes figure subsequently;
8, using plasma etching technics etching 30min under 5PaAr atmosphere, plant capacity 90W, normal temperature process conditions removes and does not receive the Pt layer that photoresist is covered; Put into acetone soln then and soak 20min, remove residual photoresist, obtain signal electrode 5; Each signal electrode 5 is all corresponding with a heating electrode 1; The interdigitated signal electrode of making 5 have 6 pairs interdigital, Pt film width 0.25mm, single interdigital length is 8mm;
9, at 600 ℃ of following annealing in process 10h, pass to N therebetween
2As blanket gas, make signal electrode 5 and silicon substrate 3 the two curing;
10, adopt method of electrostatic spinning on signal electrode 5, to make acetylene gas sensitive layer 9.0.4g stannous chloride, 0.1g indium trichloride, 0.6g samarium trichloride, 0.04g cobalt nitrate, 4.42g dimethyl formamide (DMF) and 4.42g alcohol are mixed; And magnetic agitation 6h; The polyvinylpyrrolidone (PVP) that adds 0.8g then is magnetic agitation 6h once more, obtains spinning liquid, and the gained spinning liquid is imported in the electrospinning device 6; Apply the voltage of 10kV, make fiber precursor 7 on signal electrode 5, form precursor layer 8.
11, at 600 ℃ of following sintering 4h, make precursor layer 8 be converted into acetylene gas sensitive layer 9, its form is a nanometer fiber net, nanofiber mean diameter 100nm, length 4mm; Gas sensitive in the acetylene gas sensitive layer 9 is for mix the SnO of In, Sm, Co simultaneously
2, In, Sm, Co replace part SnO
2In Sn after with In
2O
3, Sm
2O
3, Co
3O
4Form exists, and the incorporation of In, Sm, Co is respectively In
2O
3, Sm
2O
3, Co
3O
4, SnO
25～7%, 43～45%, 1～2% of four kinds of oxide gross masses obtain the full wafer sensor.
12, the full wafer sensor is cut into 2 * 4mm
2Monolithic sensor.
13, heating electrode lead-in wire 10 and signal electrode lead-in wire 11 are the Pt silk, adopt the gold paste welding compound respectively heating electrode lead-in wire 10 and signal electrode lead-in wire 11 to be received power supply and metering circuit in the intelligent air-sensitive analytic system.
Measurement result by intelligent air-sensitive analytic system obtains is seen shown in Fig. 5～8.Sensitivity definition among the figure be sensor in air with the ratio of resistance value in seized gas.The present invention's sensor has higher sensitivity, is that 100ppm, heating current are that sensitivity reaches 33 under the condition of 80mA in acetylene gas concentration, sees shown in Figure 5.Same is that 100ppm, heating current are under the condition of 80mA in acetylene gas concentration; When sensor places acetylene gas; Sensor signal reaches balance about 8s, when sensor placed air again, sensor signal reverted to initial value about 12s; That is to say and sensor's response time and release time have only 8s and 12s respectively, see shown in Figure 6.At heating current is under the 80mA condition, and the sensitivity of the present invention's sensor was once high along with the increase of acetylene gas concentration, reaches capacity during for 10000ppm in acetylene gas concentration, sees shown in Figure 7.Under 80mA heating current condition, concentration is the gas with various of 100ppm, the present invention's sensor is the highest for the sensitivity of acetylene gas, reaches 33; Sensitivity to other gas is then very little; As being 4 for hydrogen, be 3 for ethanol, acetone, very low for other gas sensitivity; See shown in Figure 8ly, explain that the present invention's sensor has very high selectivity for acetylene gas.In Fig. 8, No. 0 to No. 7 gas is followed successively by acetylene, hydrogen, ethanol, acetone, butane, carbon monoxide, methane and toluene.
Claims (3)
1. the plane formula acetylene gas sensor with nanofiber sensitive layer is furnished with heating electrode and signal electrode respectively on silicon substrate two side insulation layers, it is characterized in that the acetylene gas sensitive layer is positioned on the signal electrode, and acetylene gas sensitive layer form is SnO
2Nanometer fiber net, gas sensitive is for mix the SnO of In, Sm, Co simultaneously
2, the incorporation of In, Sm, Co is respectively In
2O
3, Sm
2O
3, Co
3O
4, SnO
25～7%, 43～45%, 1～2% of four kinds of oxide gross masses.
2. the plane formula acetylene gas sensor with nanofiber sensitive layer according to claim 1 is characterized in that SnO
2Nanofiber mean diameter 50～200nm, length 1～10mm.
3. the plane formula acetylene gas sensor with nanofiber sensitive layer according to claim 1 is characterized in that said acetylene gas sensor size is at 1 * 1mm
2To 10 * 10mm
2Between.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100910351A CN102645454A (en) | 2012-03-30 | 2012-03-30 | Planar-type acetylene gas sensor with nanofiber sensitive layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100910351A CN102645454A (en) | 2012-03-30 | 2012-03-30 | Planar-type acetylene gas sensor with nanofiber sensitive layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102645454A true CN102645454A (en) | 2012-08-22 |
Family
ID=46658409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100910351A Pending CN102645454A (en) | 2012-03-30 | 2012-03-30 | Planar-type acetylene gas sensor with nanofiber sensitive layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102645454A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105928983A (en) * | 2016-06-17 | 2016-09-07 | 吉林大学 | Acetylene gas sensor and preparation method thereof |
| CN107064221A (en) * | 2017-04-07 | 2017-08-18 | 三峡大学 | A kind of gas sensitive and preparation method for detecting formaldehyde |
| CN107941861A (en) * | 2017-11-15 | 2018-04-20 | 江西师范大学 | The forming method of nanoscale gas sensor |
| CN108956710A (en) * | 2018-06-01 | 2018-12-07 | 五邑大学 | A kind of preparation method of the spiral porous hollow nanowire sensor of latticed ZnO |
| CN112083045A (en) * | 2019-06-14 | 2020-12-15 | 富士电机株式会社 | Carbon dioxide gas sensor |
| WO2024161739A1 (en) * | 2023-01-30 | 2024-08-08 | Tdk株式会社 | Metal oxide semiconductor gas sensor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101149354A (en) * | 2007-10-26 | 2008-03-26 | 华中科技大学 | Gas sensitization array sensor and its manufacture method |
| CN101329291A (en) * | 2007-06-20 | 2008-12-24 | 中国科学院微电子研究所 | Gas sensor |
| CN102080268A (en) * | 2010-12-07 | 2011-06-01 | 吉林大学 | Orderly arranged In2O3 nanofibers and application of same in preparation of ultra-fast response alcohol sensor |
| CN102279210A (en) * | 2011-07-29 | 2011-12-14 | 吉林大学 | Double-sensitive-layer gas sensor based on nano fiber and particle adhesion layer and preparation method of double-sensitive-layer gas sensor |
-
2012
- 2012-03-30 CN CN2012100910351A patent/CN102645454A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101329291A (en) * | 2007-06-20 | 2008-12-24 | 中国科学院微电子研究所 | Gas sensor |
| CN101149354A (en) * | 2007-10-26 | 2008-03-26 | 华中科技大学 | Gas sensitization array sensor and its manufacture method |
| CN102080268A (en) * | 2010-12-07 | 2011-06-01 | 吉林大学 | Orderly arranged In2O3 nanofibers and application of same in preparation of ultra-fast response alcohol sensor |
| CN102279210A (en) * | 2011-07-29 | 2011-12-14 | 吉林大学 | Double-sensitive-layer gas sensor based on nano fiber and particle adhesion layer and preparation method of double-sensitive-layer gas sensor |
Non-Patent Citations (4)
| Title |
|---|
| 《硅酸盐通报》 20051231 梁凯等 气体传感器材料--In2O3纳米线的制备与表征 8-10 , 第6期 * |
| 全宝富等: "In2O3纳米材料的制备及其气敏特性的研究", 《仪表技术与传感器》 * |
| 张彤等: "用于检测变压器油中的乙炔气体敏感元件", 《传感器技术》 * |
| 梁凯等: "气体传感器材料——In2O3纳米线的制备与表征", 《硅酸盐通报》 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105928983A (en) * | 2016-06-17 | 2016-09-07 | 吉林大学 | Acetylene gas sensor and preparation method thereof |
| CN105928983B (en) * | 2016-06-17 | 2018-11-09 | 吉林大学 | A kind of acetylene gas sensor and preparation method thereof |
| CN107064221A (en) * | 2017-04-07 | 2017-08-18 | 三峡大学 | A kind of gas sensitive and preparation method for detecting formaldehyde |
| CN107064221B (en) * | 2017-04-07 | 2020-04-07 | 三峡大学 | Gas-sensitive material for detecting formaldehyde and preparation method thereof |
| CN107941861A (en) * | 2017-11-15 | 2018-04-20 | 江西师范大学 | The forming method of nanoscale gas sensor |
| CN107941861B (en) * | 2017-11-15 | 2020-04-24 | 江西师范大学 | Method for forming nano-scale gas sensor |
| CN108956710A (en) * | 2018-06-01 | 2018-12-07 | 五邑大学 | A kind of preparation method of the spiral porous hollow nanowire sensor of latticed ZnO |
| CN108956710B (en) * | 2018-06-01 | 2020-12-01 | 五邑大学 | Preparation method of latticed ZnO spiral type porous hollow nanowire sensor |
| CN112083045A (en) * | 2019-06-14 | 2020-12-15 | 富士电机株式会社 | Carbon dioxide gas sensor |
| WO2024161739A1 (en) * | 2023-01-30 | 2024-08-08 | Tdk株式会社 | Metal oxide semiconductor gas sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102645454A (en) | Planar-type acetylene gas sensor with nanofiber sensitive layer | |
| CN101281159B (en) | Nanometer zinc oxide multifunctional gas-sensitive sensor device and making method thereof | |
| Fang et al. | Gas sensing properties of NiO/SnO2 heterojunction thin film | |
| WO2016165398A1 (en) | Hydrogen gas sensor for online monitoring of hydrogen gas concentration in oil-immersed transformer and method for using same | |
| CN102661978A (en) | Plane methane gas sensor with double-sensitive layer structure and manufacturing method thereof | |
| KR20100071618A (en) | Method for forming semiconductor oxide nanofibers of sensors, and gas sensors using the same | |
| CN104316574B (en) | A kind of methane transducer and preparation method and application based on single heating element heater | |
| KR101734329B1 (en) | Method for detecting chemical substances using impedance analysis | |
| CN108548852A (en) | A kind of graphene-based film-type hydrogen gas sensor and preparation method thereof | |
| CN105866189A (en) | Cobalt doped tin dioxide semiconductor ethanol sensor, and making method and application thereof | |
| CN106770498A (en) | Acetone sensor, the preparation method and application of the rhodium doped stannic oxide nanometer fiber sensitive material prepared based on electrostatic spinning technique | |
| CN102269724B (en) | Manufacturing method of oriented nano-fiberized three-dimensional stereoscopic interdigital electrode of semiconductor gas-sensitive sensor | |
| KR101304340B1 (en) | Hydrogen consistency measuring equipment and its fabrication method | |
| CN218629628U (en) | Palladium alloy hydrogen sensor | |
| JPH11183420A (en) | Thin film gas sensor | |
| CN107367528A (en) | A kind of alcohol gas sensor based on ZnO composite fibres | |
| CN205484657U (en) | A humidity detection device for insulating monitoring of transformer | |
| CN110132451A (en) | A kind of heat flow transducer and preparation method thereof | |
| CN103630575A (en) | Multielectrode combined integrated gas sensor | |
| CN103698359B (en) | Semiconductor gas sensor | |
| CN113552181A (en) | With NiO/NiFe2O4Triethylamine sensor using composite nanofiber as sensitive material and preparation method thereof | |
| CN109060895A (en) | A kind of resistor-type metallic film hydrogen gas sensor to work under heating mode | |
| CN104764773A (en) | Cantilever beam type metal oxide detector and manufacturing method thereof | |
| CN101825596A (en) | Multiple-output film gas-sensitive sensor | |
| CN104880492A (en) | W6+doped NiO oxide semiconductor xylene sensor, manufacturing method and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120822 |