CN102637734B - Compound semi-conductor device and the manufacture method of compound semi-conductor device - Google Patents
Compound semi-conductor device and the manufacture method of compound semi-conductor device Download PDFInfo
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- CN102637734B CN102637734B CN201210028773.1A CN201210028773A CN102637734B CN 102637734 B CN102637734 B CN 102637734B CN 201210028773 A CN201210028773 A CN 201210028773A CN 102637734 B CN102637734 B CN 102637734B
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Abstract
The present invention provides a kind of and uses raceway groove to carry out element separation and the compound semi-conductor device inhibiting the impact brought because of the action of adjacent elements and the manufacture method of compound semi-conductor device.This compound semi-conductor device possesses: Semiconductor substrate；There is carrier transit layer and carrier supplying layer and the nitride semiconductor layer being configured in Semiconductor substrate；Inside has the element separating insulation film that upper-end part of driving configures in the hole of carrier transit layer and the top of the boundary face of carrier supplying layer the surrounding that surrounds nitride semiconductor layer.
Description
Technical field
The present invention relates to compound semi-conductor device and the compound semiconductor using raceway groove to carry out element separation
The manufacture method of device.
Background technology
In the manufacture of semiconductor integrated circuit (IC) comprising high pressure resistant power component, use by quilt
The method that element is separated by the element separating insulation film of embedment raceway groove.Comprise nitride semiconductor layer,
Such as comprise the compound semiconductor dress of HEMT (HEMT) element constant power element
In putting, for carrying out element separation, it is also adopted by forming nitride semiconductor layer disjunction the method (example of raceway groove
As with reference to patent document 1.).
Patent document 1:(Japan) JP 2002-222817 publication
By the compound semi-conductor device regular event making IC chip be comprised, need to get rid of as much as possible to be subject to
The impact of the action of adjacent elements.But, the element separating insulation film being embedded in raceway groove carrying out element
In the case of separation, exist and make because of the heating of adjacent elements, particularly power component or leakage current etc.
The affected problem of characteristic of compound semi-conductor device.
Summary of the invention
In view of the above problems, it is an object of the invention to, it is provided that a kind of use raceway groove carry out element separation and
Inhibit compound semi-conductor device and the compound semiconductor dress of the impact brought because of the action of adjacent elements
The manufacture method put.
A mode according to the present invention, it is provided that a kind of compound semi-conductor device, it possesses: (a) partly leads
Body substrate；(b) nitride semiconductor layer, its have carrier transit layer (キ ャ リ ア traveling) and
Carrier supplying layer, and be configured in Semiconductor substrate；C () element separating insulation film, has inside it
Upper-end part of driving is in the hole of carrier transit layer Yu the top of the boundary face of carrier supplying layer, and surrounds nitrogen
The surrounding of compound semiconductor layer and configure.
Alternate manner according to the present invention, it is provided that the manufacture method of a kind of compound semi-conductor device, its bag
Containing the steps: (a) is formed on a semiconductor substrate has carrier transit layer and carrier supplying layer
Nitride semiconductor layer；B the etching of () through-thickness removes a part for nitride semiconductor layer, from
And form raceway groove；C () is to be internally formed upper-end part of driving in the limit of carrier transit layer Yu carrier supplying layer
The mode in the hole of the top at interface, forms element separating insulation film in raceway groove.
Raceway groove is used to carry out element and inhibit the action of adjacent elements to bring according to the present invention it is possible to provide
The compound semi-conductor device of impact and the manufacture method of compound semi-conductor device.
Accompanying drawing explanation
Fig. 1 is the constructed profile of the composition of the compound semi-conductor device representing embodiment of the present invention；
Fig. 2 is the operation of the manufacture method of the compound semi-conductor device for embodiment of the present invention is described
Profile (its 1)；
Fig. 3 is the operation of the manufacture method of the compound semi-conductor device for embodiment of the present invention is described
Profile (its 2)；
Fig. 4 is the operation of the manufacture method of the compound semi-conductor device for embodiment of the present invention is described
Profile (its 3)；
Fig. 5 is the operation of the manufacture method of the compound semi-conductor device for embodiment of the present invention is described
Profile (its 4)；
Fig. 6 is the operation of the manufacture method of the compound semi-conductor device for embodiment of the present invention is described
Profile (its 5), Fig. 6 (a) represents the first operation becoming separating insulation film in channel shape, Fig. 6 (b)
Represent the second operation becoming separating insulation film in channel shape；
Fig. 7 is the operation of the manufacture method of the compound semi-conductor device for embodiment of the present invention is described
Profile (its 6)；
Fig. 8 is the shape example representing the raceway groove formed on the compound semi-conductor device of embodiment of the present invention
Constructed profile, Fig. 8 (a) represent reverse tapered shape raceway groove, Fig. 8 (b) represents the raceway groove of barrel-shaped shape；
Fig. 9 is the schematic section of the composition of the compound semi-conductor device representing other embodiment of the present invention
Figure.
Symbol description
1: compound semi-conductor device 10: Semiconductor substrate 15: cushion 20: nitride is partly led
Body layer 21: carrier transit layer 22: carrier supplying layer 23: two dimension carrier gases layer 30:
Element separating insulation film 31:TEOS film 32: silicon oxide film 40: hole 50: element active district
Territory 61: source electrode 62: drain electrode 63: gate electrode 70: interlayer dielectric 80: multilayer is joined
Line 90: diaphragm 100: raceway groove
Detailed description of the invention
Secondly, referring to the drawings embodiments of the present invention are illustrated.For the record of the following drawings,
Same or similar part is marked same or similar symbol.But, accompanying drawing is schematic figures, should
The ratio etc. noticing thickness and the relation of planar dimension, the thickness of each layer is different from the situation of reality.Therefore,
Concrete thickness or size should judge with reference to the following description.It addition, it is the most certain at accompanying drawing
Also the relation of respective size or the part that ratio is different are comprised.
It addition, embodiment example shown below is for the device embodied by the technological thought of the present invention
Or method, the technological thought of the present invention to material, the shape of component parts, construct, configuration etc. below
Do not do specific.Embodiments of the present invention can increase various change in the range of the present invention asks.
As it is shown in figure 1, the compound semi-conductor device 1 of embodiment of the present invention possesses Semiconductor substrate 10；
There is carrier transit layer (carrier transport layer) 21 and carrier supplying layer (carrier injection
Layer) 22 and the nitride semiconductor layer 20 that is configured in Semiconductor substrate 10；Surround nitride partly to lead
The surrounding of body layer 20 and the element separating insulation film 30 that configures.Nitride semiconductor layer 20 is by nitride half
Conductor is constituted, and representational nitride-based semiconductor is by AlxInyGa1-x-yN(0≤x≤1,0≤y≤1,0≤
X+y≤1) represent, for gallium nitride (GaN), aluminium nitride (AlN), indium nitride (InN) etc..
Element separating insulation film 30 is to be internally formed example at the raceway groove being formed at nitride semiconductor layer 20
Such as silica (SiO2) structure of the dielectric film such as film.As it is shown in figure 1, at element separating insulation film 30
It is internally formed hole 40.The upper-end part of driving in hole 40 is in carrier transit layer 21 and carrier supplying layer
The top of the boundary face of 22.It addition, the upper surface of element separating insulation film 30 is positioned at nitride semiconductor layer
The top of the upper surface of 20.
Additionally, be that realization comprises the integrated of the IC of the compound semi-conductor device 1 containing power component,
It is formed above element separating insulation film 30 in hole 40.Thus, it is possible to join above hole 40
Put distribution etc..
Surrounded around by element separating insulation film 30, the element active district of definition compound semi-conductor device 1
Territory 50.Compound semi-conductor device 1 shown in Fig. 1 is by band-gap energy nitride different from each other half
Boundary face between carrier transit layer 21 and carrier supplying layer 22 that conductor is constituted forms heterogeneous combination
The HEMT element in face.Formed on carrier transit layer 21 near heterogeneous faying face and lead to as electric current
The two-dimentional carrier gases floor 23 on road (passage).Explained later HEMT element.
Separate for carrying out the element of compound semi-conductor device 1, need 23 points of two dimension carrier gases layer
Disconnected.Therefore, element separating insulation film 30 use will be containing two dimension carrier gases layer 23(Two
Dimensional Carrier Gas Layer) the raceway groove of nitride semiconductor layer 20 disjunction and formed.
By being internally formed hole 40 at element separating insulation film 30, it is possible to that suppresses because of adjacent elements is dynamic
Make bring impact, such as make compound semi-conductor device 1 because of the heating of adjacent elements or leakage current etc.
Characteristic be affected.
May refrain from that the heating of adjacent elements brings affect this point for, raceway groove is by element separating insulation film
The difference of impact of 30 complete totally buried situations and the situation that forms hole 40 at element separating insulation film 30 rises
Extent because of the thermal conductivity in the thermal conductivity of element separating insulation film 30 and air.Silicon (Si) leads
Heating rate is 150 ［ W/m deg ］ left and right, silica (SiO2) thermal conductivity of film is parallel with C face
Direction be 14 ［ W/m deg ］ left and right, be 7.2 ［ W/m deg ］ in the direction vertical with C face
Left and right.It addition, the thermal conductivity of quartz glass is 1.4 ［ W/m deg ］ left and right.In contrast, air
Thermal conductivity be 0.026 ［ W/m deg ］ left and right.That is, the thermal conductivity in hole 40 compares hole 40 weeks
The thermal conductivity of the element separating insulation film 30 enclosed is the least.Therefore, by element separating insulation film 30
Be internally formed hole 40, reduce the shadow that compound semi-conductor device 1 is subject to because of the heating of adjacent elements
Ring.
Particularly, the upper-end part of driving in hole 40 becomes the two-dimentional carrier gases layer at heating center when action
The top of 23.Therefore, utilize be internally formed the element separating insulation film 30 in hole 40 can be effectively
Suppress from adjacent elements to the heat transfer of compound semi-conductor device 1.
In example shown in Fig. 1, by utilizing parellel arranged three element separating insulation films 30 to nitrogenize
Thing semiconductor layer 20 disjunction, by compound semi-conductor device 1 and adjacent elements insulated separation.But, and
The number of the element separating insulation film 30 of row configuration is not limited to three, or an element can also be utilized to divide
From dielectric film 30, compound semi-conductor device 1 is separated.
The number of element separating insulation film 30 sets according to the interelement voltage etc. putting on separation.Right
Element separating insulation film 30 applies high-tension situation, such as to interelement applying hundreds of V～1000V left side
In the case of right voltage, element separating insulation film 30 requires high pressure resistant.In the case of Gai, increase and join parallel
The number of the element separating insulation film 30 put.On the other hand, little at the voltage that adjacent interelement is applied
In the case of, element separating insulation film 30 can be one.It addition, it is the least to put on interelement voltage,
The width that then can make element separating insulation film 30 is the least.Thus, it is possible to reduction compound semi-conductor device
The area of 1.
Below, the composition of the compound semi-conductor device 1 shown in Fig. 1 is illustrated.Semiconductor substrate
10 can use silicon substrate etc..
Carrier transit layer 21 such as will be not added with by Organometallic Vapor Phase growth (MOCVD) method etc.
The undoped GaN epitaxy of impurity grows the thickness about 0.3～10 μm and is formed.Here, undoped is
Refer to be not intended to ground impurity.
The carrier supplying layer 22 being configured on carrier transit layer 21 by band gap than carrier transit layer 21
Greatly and the lattice paprmeter nitride-based semiconductor different from carrier transit layer 21 is constituted.Carrier supplying layer
22 for example, by AlxMyGa1-x-yN(0≤x ＜ 1,0≤y ＜ 1,0≤x+y≤1, M is indium (In)
Or boron (B) etc.) nitride-based semiconductor that represents.It addition, can also adopt as carrier supplying layer 22
With the Al of undopedxGa1-xN.It addition, carrier supplying layer 22 can also use with the addition of p-type impurity
AlxGa1-xThe nitride-based semiconductor that N is constituted.
Carrier supplying layer 22 is epitaxially-formed in carrier transit layer 21 by mocvd method etc.
On.Carrier supplying layer 22 is different due to lattice paprmeter with carrier transit layer 21, so producing lattice
The piezoelectric polarization (piezoelectricpolarization) that strain brings.Because this piezoelectric polarization and carrier supply
The spontaneous polarization that had of crystallization of layer 22 and near heterogeneous combination, produce highdensity carrier, formed
Two dimension carrier gases layer 23.The Film Thickness Ratio carrier transit layer 21 of carrier supplying layer 22 is thin, be 10～
About about 50nm, such as 25nm.
Carrier supplying layer 22 is configured with source electrode 61, drain electrode 62 and gate electrode 63.
Source electrode 61 and drain electrode 62 are by can be with nitride semiconductor layer 20 low resistance contact (Ohmic contact)
Metal formed.The such as duplexer etc. as titanium (Ti) and aluminium (Al) forms source electrode 61 and electric leakage
Pole 62.Owing to the thickness of carrier supplying layer 22 is thin, so source electrode 61 and drain electrode 62 carry with two dimension
Flow sub-gas blanket 23 ohm connection.Or, it is also possible to source electrode 61 and drain electrode 62 are configured at current-carrying
In sub-transit layer 21.
Gate electrode 63 is configured between source electrode 61 and drain electrode 62.Two dimension carrier gases layer 23 conduct
Current path (passage) between source electrode 61 and drain electrode 62 works, and flows through the electric current of passage by right
The grid-control voltage that gate electrode 63 applies is controlled.Gate electrode 63 is such as by nickel (Ni) film and gold
(Au) lit-par-lit structure of film is constituted.
Join on carrier supplying layer 22 in the way of covering source electrode 61, drain electrode 62 and gate electrode 63
Put the interlayer dielectric 70 being made up of dielectric film.Interlayer dielectric 70 configures and is made up of metal film etc.
Multilayer wired 80, source electrode 61, drain electrode 62 and gate electrode 63 and multilayer wired 80 are through being formed from
The opening portion electrical connection of interlayer dielectric 70.
Interlayer dielectric 70 is configured with diaphragm 90, to cover multilayer wired 80,.Diaphragm 90
The SiO of number μm left and right thickness can be used2Film, silicon nitride (SiN) film or the structure of these films of stacking
Make.Such as, the SiO about stacking thickness 5 μm2SiN film about film and thickness 3 μm or polyamides
Imines (PI) film and form diaphragm 90.
In addition it is also possible to form cushion between Semiconductor substrate 10 and carrier transit layer 21.Slow
Rush layer to use the first layer (the first secondary layer) being such as made up of AlN film and be made up of GaN film
The multi-ply construction of the second layering (second secondary layer) interaction cascading.As the material of cushion, also
The nitride-based semiconductor beyond AlN, GaN can be used.Cushion is due to the action with HEMT element
Without direct relation, so cushion can also be omitted.Additionally, form cushion over the semiconductor substrate 10
In the case of, it is also possible to by element separating insulation film 30, cushion is separated.
In the compound semi-conductor device 1 of embodiment of the present invention, the element with hole 40 is utilized to separate
Dielectric film 30 carries out element separation.Therefore, the heating of adjacent elements or the impact of leakage current are suppressed.
Therefore, according to the compound semi-conductor device 1 shown in Fig. 1, using the teaching of the invention it is possible to provide use raceway groove to carry out element separation,
And inhibit the compound semi-conductor device 1 of the impact brought because of the action of adjacent elements.
It addition, by being internally formed hole 40 at element separating insulation film 30, relax cutting (dicing)
Operation or joint (bonding) operation act on the stress of compound semi-conductor device 1.Additionally, be
The abirritation stress in nitride semiconductor layer 20, the lower surface of preferred element separating insulation film 30
Connect with Semiconductor substrate 10.
Below, the manufacture of the compound semi-conductor device 1 of embodiment of the present invention is described with reference to Fig. 2～Fig. 7
Method.Additionally, the manufacture method of the compound semi-conductor device 1 of the following stated is an example, comprises it and become
Shape example, can be realized by various manufacture methods in addition certainly.
First, as in figure 2 it is shown, form nitride semiconductor layer 20 over the semiconductor substrate 10.Nitride
Semiconductor layer 20 can use stacking as the GaN film about thickness 3.2 μm of carrier transit layer 21,
Structure with the AlGaN film of thickness about the 25nm as carrier supplying layer 22.Now, also
The cushion about thickness 2 μm can be formed over the semiconductor substrate 10, form current-carrying on the buffer layer
Sub-transit layer 21.Additionally, can also be formed as cover layer on carrier supplying layer 22 as required
The undoped GaN layer of thickness about 5nm.
Secondly, as it is shown on figure 3, formed about such as width 2 μm in the outside in element active region 50
Raceway groove 100.It is formed at the quantity of interelement raceway groove 100 as mentioned above according to putting on interelement voltage
Deng setting.Raceway groove 100 such as uses photoetching technique and etching technique and patterned silica (SiOX)
Film 110 and is formed by anisotropic etching with hard mask for etching.Now, nitride is preferably etched
Semiconductor layer 20 is until the surface of Semiconductor substrate 10 is exposed, and forms raceway groove 100.Additionally, in order to really
Recognize the part not remaining nitride semiconductor layer 20 in the bottom surface of raceway groove 100, it is also possible to lost by excess
Carve the part on the top etching Semiconductor substrate 10.Afterwards, as shown in Figure 4, silica is removed
(SiOX) film 110.
As it is shown in figure 5, form element in the way of forming hole 40 to separate insulation in the inside of raceway groove 100
Film 30.The target film thickness of element separating insulation film 30 is set according to the width etc. of raceway groove 100.Such as
In the case of the width of raceway groove 100 is 2 μm, the target film thickness of element separating insulation film 30 is set
Be more than 0.5 μm and less than 1.0 μm about.
Element separating insulation film 30 is by such as tetraethyl orthosilicate (TEOS) film and passes through plasma CVD
The dielectric film that method obtains combines and is formed.As shown in Figure 6 (a), in side wall surface and the bottom surface of raceway groove 100
Form spreadability preferable TEOS film 31.Afterwards, when forming SiO by plasma CVD method2Film
When 32, comparing the film forming speed of the inside of raceway groove 100, the film forming speed of the opening portion of raceway groove 100 is fast,
Therefore, before the inside of raceway groove 100 is imbedded by element separating insulation film 30, the opening portion of raceway groove 100
Blocked by element separating insulation film 30.Its result as shown in Figure 6 (b), is formed at and has been internally formed substantially
The element separating insulation film 30 in the hole 40 of triangle.Such as in the feelings that width is 2 μm of raceway groove 100
Under condition, the widest position of width in hole 40 is set as about 0.1～1.0 μm.Utilize above-mentioned unit
The forming method of part separating insulation film 30, the upper surface of element separating insulation film 30 is positioned at nitride partly leads
The top of the upper surface of body layer 20.
As it is shown in fig. 7, after forming element separating insulation film 30, remove and be formed at element active region 50
On element separating insulation film 30.Now, by the element separating insulation film 30 above hole 40
Form etching protective film (not shown), only can remain element separating insulation film 30 above hole 40.
Thus, it is possible to configure distribution etc. above hole 40, can improve integrated.Etching protective film 120 example
As can use use photoetching technique and patterned photoresist film etc..Eliminating element active region
After element separating insulation film 30 on 50, remove etching protective film (not shown).
Afterwards, implement well-known sputtering process and patterning step, by source electrode 61, drain electrode 62 and
Gate electrode 63 is formed at the position of the regulation of nitride semiconductor layer 20.To cover source electrode 61, leakage
After the mode of each electrode of electrode 62 and gate electrode 63 is configured with interlayer dielectric 70, upper with each electrode
The mode that at least local is exposed on surface arranges opening portion on interlayer dielectric 70.With this opening portion with
The mode of each electrode contact forms multilayer wired 80 on interlayer dielectric 70.And then it is multilayer wired to cover
The mode of 80 forms diaphragm 90 on interlayer dielectric 70.As above the compound shown in Fig. 1 half is completed
Conductor device 1.
According to the manufacture method of above-mentioned compound semi-conductor device 1, utilize the inside of raceway groove 100 and open
The difference of the growth rate of the element separating insulation film 30 of oral area, can be in element separating insulation film 30
Portion forms the hole 40 about width 0.5 μm.
In above-mentioned, illustrate the situation that cross sectional shape is rectangle of the film thickness direction along raceway groove 100, but
Raceway groove 100 can also be formed in the way of and reverse tapered shape that top is narrow wide by the bottom shown in Fig. 8 (a).
Or it is the widest that the cross sectional shape of raceway groove 100 can also be set to width near the central authorities shown in Fig. 8 (b)
Barrel-shaped shape.By being set to reverse tapered shape or barrel-shaped shape, easily it is internally formed hole at raceway groove 100.Logical
Cross the process conditions suitably setting the formation raceway grooves 100 such as etching condition, raceway groove 100 can be formed as down
Cone-shaped or barrel-shaped shape.
It addition, to forming SiO after forming TEOS film 312Film 32, it is achieved there is the element in hole 40
The example of separating insulation film 30 is illustrated, but element can be selected to divide according to the shape of raceway groove 100 etc.
Forming method from dielectric film 30.Such as can also form SiO2TEOS film is formed after film.Additionally,
Element separating insulation film 30 can also use SiN film, boron-phosphorosilicate glass (BPSG) film, phosphorosilicate glass
(PSG) film, aluminum oxide (Al2O3) film etc..
Manufacture method according to the above description, remains element separating insulation film 30 above hole 40.Cause
This, the flatness near above of infringement element separating insulation film 30.But, for element movement weight
The flatness in the element active region 50 wanted is kept and suppresses the etch damage aspect from hole 40,
The element separating insulation film 30 with hole 40 can be formed.Further, since at nitride semiconductor layer
The element separating insulation film 30 with hole 40 is formed, it is possible to relax before forming each electrode on 20
The warpage of the Semiconductor substrate 10 produced at above-mentioned sputtering process or stress, it is possible to inhibiting compound semiconductor
The deterioration in characteristics of device 1.
The above-mentioned element separating insulation film 30 illustrated as shown in Figure 7 on removing element active region 50
Example but it also may do not remove element separating insulation film 30 and use as interlayer dielectric 70.That is,
Can also be formed in the assigned position of the element separating insulation film 30 being formed on element active region 50 and open
Oral area, forms source electrode 61, drain electrode in this opening portion in the way of connecting with carrier supplying layer 22
62 and gate electrode 63.
As described above, according to the manufacture method of the compound semi-conductor device of embodiment of the present invention, can
To form the element separating insulation film 30 with hole 40.Its result can realize using raceway groove to carry out element
Separate and inhibit the compound semi-conductor device 1 of the impact brought because of the action of adjacent elements.
(other embodiment)
As above-mentioned, the present invention is recorded by embodiment, but forms the opinion of the part of the disclosure
Address accompanying drawing and should not be understood as limiting the situation of the present invention.According to the disclosure, those skilled in the art can
To use various replacement embodiments, embodiment and application technology.
Such as shown in Fig. 9, it is also possible between Semiconductor substrate 10 and carrier supplying layer 22, configuration is made
Cushion 15 for buffer layer.Also by element separating insulation film 30 separation buffer layer 15.
So, the present invention is included in this various embodiments etc. do not recorded certainly.Therefore, the present invention
The specific item of technical scope suitable scope according to the above description determines.
Claims (5)
1. a compound semi-conductor device, it is characterised in that possess:
Semiconductor substrate；
Nitride semiconductor layer, it has carrier transit layer and carrier supplying layer, and is configured at described
In Semiconductor substrate；
Element separating insulation film, has upper-end part of driving in described carrier transit layer and described current-carrying inside it
The single hole of the up-narrow and down-wide triangle of the top of the boundary face of sub-supplying layer, and surround described nitridation
The surrounding of thing semiconductor layer and configure.
2. compound semi-conductor device as claimed in claim 1, it is characterised in that described element divides
Upper surface from dielectric film is positioned at the top of the upper surface of described nitride semiconductor layer.
3. compound semi-conductor device as claimed in claim 1 or 2, it is characterised in that described unit
The lower surface of part separating insulation film connects with described Semiconductor substrate.
4. the manufacture method of a compound semi-conductor device, it is characterised in that comprise the steps:
Formed on a semiconductor substrate and there is the nitride of carrier transit layer and carrier supplying layer partly lead
Body layer；
Through-thickness etching removes a part for described nitride semiconductor layer, thus forms raceway groove；
To be internally formed upper-end part of driving in the border of described carrier transit layer Yu described carrier supplying layer
The mode in the single hole of the up-narrow and down-wide triangle of the top in face, forms element in described raceway groove and divides
From dielectric film.
5. the manufacture method of compound semi-conductor device as claimed in claim 4, it is characterised in that
Described element separating insulation film by combination TEOS film and dielectric film and formed, described dielectric film by
Plasma CVD method is formed.
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| JP2011-025545 | 2011-02-09 | ||
| JP2011025545A JP5923242B2 (en) | 2011-02-09 | 2011-02-09 | Compound semiconductor device and method of manufacturing compound semiconductor device |
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| CN102637734B true CN102637734B (en) | 2016-08-17 |
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| JP6200818B2 (en) * | 2014-01-21 | 2017-09-20 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
| US9466667B2 (en) | 2014-09-10 | 2016-10-11 | Kabushiki Kaisha Toshiba | Semiconductor memory device and method for manufacturing same |
| US11158575B2 (en) * | 2018-06-05 | 2021-10-26 | Macom Technology Solutions Holdings, Inc. | Parasitic capacitance reduction in GaN-on-silicon devices |
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| CN101162731A (en) * | 2006-10-12 | 2008-04-16 | 三菱电机株式会社 | Field-effect transistor and method of manufacturing the same |
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| JPH08330601A (en) * | 1995-03-30 | 1996-12-13 | Toshiba Corp | Semiconductor device and manufacture thereof |
| JP4810072B2 (en) * | 2004-06-15 | 2011-11-09 | 株式会社東芝 | Nitrogen compound-containing semiconductor devices |
| JP4899365B2 (en) * | 2005-07-20 | 2012-03-21 | 富士電機株式会社 | Manufacturing method of semiconductor device |
| JP2007208006A (en) * | 2006-02-02 | 2007-08-16 | Matsushita Electric Ind Co Ltd | Semiconductor device, and method and device for manufacturing the same |
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| CN101162731A (en) * | 2006-10-12 | 2008-04-16 | 三菱电机株式会社 | Field-effect transistor and method of manufacturing the same |
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| TW201251011A (en) | 2012-12-16 |
| CN102637734A (en) | 2012-08-15 |
| JP2012164900A (en) | 2012-08-30 |
| JP5923242B2 (en) | 2016-05-24 |
| TWI569443B (en) | 2017-02-01 |
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