CN102636491A - Semiconductor defect detection method based on surface plasma wave - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 188
- 238000001514 detection method Methods 0.000 title claims abstract description 21
- 230000007547 defect Effects 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 31
- 230000002950 deficient Effects 0.000 claims abstract description 25
- 230000008859 change Effects 0.000 claims description 30
- 230000008569 process Effects 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 11
- 230000004044 response Effects 0.000 claims description 5
- 230000009471 action Effects 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
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- 238000012423 maintenance Methods 0.000 claims description 2
- 230000008901 benefit Effects 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 55
- 238000006073 displacement reaction Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 230000001427 coherent effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
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Abstract
The invention discloses a semiconductor defect detection method based on surface plasma wave, and is used for detecting the semiconductor surface flatness or the internal defect of a semiconductor film. According to the invention, an electromagnetic wave with frequency lower than the semiconductor plasma frequency enters a slit between the blade edge and the semiconductor to be detected so as to generate a surface plasma wave on the semiconductor surface. The surface plasma wave can be coupled into a space radiation electromagnetic wave at the slit position between another blade edge and the semiconductor to be detected so as to be received by a detector. By changing the relative positions of the blade and the semiconductor in the horizontal direction, when a surface plasma wave passes through the defective position on the surface or inside of the semiconductor to be detected, the outgoing electromagnetic wave signal correspondingly changes so that the semiconductor surface unflatness or the internal defect of the semiconductor can be detected according to the principle. Compared with the prior art, the method disclosed by the invention has the advantages of wide application range, flexibility in use, high detection precision, no damage to detection sample and the like.
Description
Technical field
The present invention relates to a kind of semiconductor defect detection method, relate to a kind of semiconductor defect detection method, be used to detect semiconductor surface flatness or semiconductive thin film inherent vice based on surface plasma wave.
Background technology
Semiconductor devices needs the crystal of height perfect, even but used proven technique, perfectly semiconductor crystal still can not guarantee absolutely to obtain.Crystal defect can produce the growth of uneven silicon dioxide film, difference epitaxial film deposit, uneven doped layer and other problems and cause technological problems.In the device of accomplishing, crystal defect can cause that harmful current spills, and stops device under normal voltage, to be worked.In the semiconductor subassembly industry, people have proposed extra high requirement to specific breakage and the defective that detects special production specifications accurately, all sidedly and cause.Therefore, under the situation that takes into full account semiconductor surface flatness and degree of purity, it is necessary that it is carried out Non-Destructive Testing.
Detect the general now method that adopts the method for coherent light interference or adopt the capacitive displacement sensing of the inner tiny flaw of polished semiconductor surface smoothness or semiconductive thin film.The method of coherent light interference can only detect the flatness of semiconductor surface, can't detect for the defective of semiconductor inside.And the method for capacitive displacement sensing can detect the inner defective of semiconductor; But it can only measure the uniform flaky semiconductor of thickness; And in uneven thickness or be grown on the larger volume object or electric conductor on semiconductive thin film, be difficult to according to semiconductor everywhere up and down the consistency detection of two ends electric capacity whether have defective.And the method for capacitive displacement sensing can only point-to-point measurement, has the slower inferior position of measuring speed.
Certainly, adopt the method for transmission imaging also can detect surface smoothness or inherent vice, and detection speed is very fast, but owing to receive the influence of diffraction effect, the spatial resolution of detection is not enough.Because what a lot of semiconductor products or half product (like wafer) adopted is film or schistose texture; Internal defects is near the surface; And surface plasma wave is because the main local of its energy near surface, therefore can consider to utilize surface plasma wave to detect the inside tiny flaw of semiconductor surface flatness or semiconductive thin film near surface.
Summary of the invention
Technical matters to be solved by this invention is to overcome the deficiency of prior art, and a kind of semiconductor defect detection method based on surface plasma wave is provided, and is used to detect semiconductor surface flatness or semiconductive thin film inherent vice.
The present invention is concrete to adopt following technical scheme to solve the problems of the technologies described above.
Based on the semiconductor defect detection method of surface plasma wave, be used to detect semiconductor surface flatness or semiconductive thin film inherent vice, may further comprise the steps:
Step 2, the position and the incident wave frequency of regulating two blades, make to meet the following conditions: the cutting edge of two blades and the distance between the upper semiconductor are less than the aerial attenuation distance of surface plasma wave; Distance between two blades is less than the propagation distance of surface plasma wave at semiconductor surface; Semi-conductive thickness is greater than the attenuation distance of surface plasma wave in semiconductor;
The cutting edge and the distance between the upper semiconductor of step 3, two blades of maintenance are constant; Change two blades and semiconductor relative position in the horizontal direction; Make each position of upper semiconductor all through the projection institute enclosing region of two blades at semiconductor surface; In this process, produce significant change like the detected signal of detector, then be positioned at semiconductor surface out-of-flatness or the inner defectiveness of two blades this moment in the projection institute enclosing region of semiconductor surface.
Adopt above technical scheme; Can be to semiconductor surface the whether smooth or inner defective that whether exists of semiconductive thin film qualitatively judge; And can find the approximate location of defective; But can't confirm the exact position of defective, in order can accurately to locate defective locations, the present invention further adopts following technical scheme:
Said semiconductor defect detection method based on surface plasma wave also comprises:
The position of step 4, fixing first blade moves horizontally second blade two distances between the blade is reduced; Move horizontally semiconductor; Make projection the position through just now made detector signal change of first blade at semiconductor surface; If this moment, signal that detector is surveyed still changed in the semiconductor moving process; Then move horizontally second blade once more two distances between the blade are further reduced, and repeat above action once more, signal that detector is surveyed no longer changes in the semiconductor moving process;
The position of step 5, fine setting second blade is to enlarge the distance of two blades; Move horizontally semiconductor; Make projection the position through in step 4 make detector signal change of first blade at semiconductor surface; Such as the peak response of detector following the survey signal do not change, then finely tune the position of second blade once more, further increase the distance of two blades; And move horizontally semiconductor, make projection the position through in step 4 make detector signal change of first blade at semiconductor surface; Repeat above action, under peak response, can just detect subtle change until detector, then the inner defective position of semiconductor surface out-of-flatness or semiconductor is positioned at the below of second blade this moment.
Step 6, for detected other semiconductor surface out-of-flatness in the step 3 or inner defective position, repeating step 4, step 5, thus obtain semiconductor surface out-of-flatness or inner defective exact position.
Further, said semiconductor defect detection method based on surface plasma wave also comprises:
Step 7, employing wideband incident wave and repeating step 1-step 6 are according to the depth range of different frequency ripple in the attenuation distance reckoning semiconductor inherent vice of the surface plasma wave of this semiconductor surface formation.Because the attenuation distance of the surface plasma wave that electromagnetic wave produced in the indium antimonide semiconductor of different frequency is different in the wideband incident wave.Attenuation distance can be tried to achieve along calculating perpendicular to the attenuation constant of semiconductor surface direction in semiconductor by surface plasma wave.So through the variation of ripple wave spectrum that detector is surveyed when semiconductor moves of observation different frequency, just can be according to the depth range of different frequency ripple in the attenuation distance reckoning semiconductor inherent vice of the surface plasma wave of this semiconductor surface formation.
The present invention utilizes surface plasma wave to detect semiconductor surface flatness or semiconductive thin film inherent vice; Its method simple and flexible; Can select according to the actual detected needs: if only need detect the whether smooth or near surface of semiconductor surface whether inherent vice is arranged, can only carry out first three step of above-mentioned steps; If also need detect the position of semiconductor surface out-of-flatness or inherent vice, can carry out the first six step of above-mentioned steps; Further detect the depth range of semiconductor inherent vice if desired, then need carry out above-mentioned Overall Steps.Compare prior art, the inventive method has following beneficial effect:
1, utilize surface plasma wave to detect, compare with the method for transmission imaging, highly sensitive; And semi-conductive plasma frequency determined to be used to detect is than the longer surface plasma wave of visible light surface plasma wave wavelength; Compare this surface plasma wave to have propagation distance long with the surface plasma wave of visible light wave range; The advantage that penetration depth is dark is more suitable for detecting in the quick nondestructive of semiconductive thin film.
2, compare with the method for capacitive displacement sensing, detection speed is fast; Because pick-up unit is only at semi-conductive upper surface; And the capacitive displacement sensing method need be placed sniffer simultaneously in semi-conductive upper and lower surfaces, so the present invention can carry out surfacing or Inner Defect Testing for the semiconductive thin film that is grown on other objects.
3, inherent vice that can the probing semiconductor near surface, and the coherent light interference method can only the probing semiconductor surface smoothness.
4, non-contact detection is not destroyed semiconductor samples itself, and can detect any semiconductor material.
Description of drawings
Fig. 1 is the principle schematic of semiconductor defect detection method of the present invention; Wherein, 1,2 is blade, and 3 is that incident electromagnetic wave, 4 is the outgoing electromagnetic wave, and 5 is surface plasma wave, and 6 is semiconductor, and 7 is semiconductor defect;
Fig. 2 is blade in the embodiment and the semiconductor process synoptic diagram that relatively moves.
Embodiment
Below in conjunction with accompanying drawing technical scheme of the present invention is elaborated:
Thinking of the present invention is two parallel blades of vertical placement above semiconductor surface to be measured; Frequency is gone into one of them blade cutting edge of directive and semi-conductive gap less than the electromagnetic wave of semiconductor plasma frequency; Thereby semiconductor surface produces surface plasma wave between two blades; Move horizontally the relative position of semiconductor and blade; When surface plasma wave process semiconductor surface or the inner defective that exists; The electromagnetic wave signal of outgoing from another blade cutting edge and semi-conductive gap, with surface plasma wave on semiconductor surface through same distance but compare and can change when semiconductor surface or inner non-existent defective, thereby can detect semiconductor surface out-of-flatness or semiconductor inherent vice according to this principle.
For the ease of public understanding technical scheme of the present invention, be example under the temperature of 300K, to measure the inner tiny flaw of indium antimonide intrinsic semiconductor film below, to come technical scheme of the present invention is elaborated, its concrete steps are following:
Step 2, the position and the incident wave frequency of regulating two blades make to meet the following conditions: two blades 1 and 2 cutting edge and the distance between indium antimonide semiconductor 6 upper surfaces are less than surface plasma wave 5 aerial attenuation distances; Distance between two blades is less than the propagation distance of surface plasma wave 5 on indium antimonide semiconductor 6 surfaces; The thickness of indium antimonide semiconductor 6 is greater than the attenuation distance of surface plasma wave 5 in indium antimonide semiconductor 6.When surface plasma wave 5 propagates into the cutting edge place of blade 2 from the cutting edge of blade 1, will have the part surface plasma wave to be converted into radiated wave 4, and the detector that is fixedly set in blade 2 outsides receive by the cutting edge of blade 2.
The propagation distance of surface plasma wave and the attenuation distance in air and indium antimonide semiconductor can be tried to achieve according to the dispersion equation of surface plasma, and the dispersion equation of surface plasma is:
In the above formula
k xIt is propagation constant along the surface plasma wave of indium antimonide semiconductor surface direction propagation.
k Z1With
k Z2Be perpendicular to the upwards direction of indium antimonide semiconductor surface and the propagation constant of downward direction respectively.
cIt is the light velocity in the vacuum.
ωIt is the pairing angular frequency of maximum frequency in the incident wave.
Be air complex permittivity (
ε 1Be the real part of air complex permittivity,
ε 1' be the imaginary part of air complex permittivity).
Be the indium antimonide semiconductor wafer complex permittivity (
ε 2Be the real part of indium antimonide complex permittivity,
ε 2' be the imaginary part of indium antimonide complex permittivity).
A,
CWith
EBe respectively surface plasma wave along indium antimonide semiconductor surface direction and perpendicular to the upwards direction of indium antimonide semiconductor surface and the phase constant of downward direction,
B,
DWith
FBe respectively surface plasma wave along indium antimonide semiconductor surface direction and perpendicular to the indium antimonide semiconductor surface upwards with the attenuation constant of downward two directions.
Surface plasma wave is used in the propagation distance of indium antimonide semiconductor surface
δ Sp Expression, the usable surface plasma wave is along the attenuation constant of the direction of propagation
BCalculating is tried to achieve:
The attenuation distance of surface plasma wave in air and indium antimonide semiconductor used respectively
δ d With
δ m Expression.Usable surface plasma wave edge is perpendicular to the attenuation constant of indium antimonide semiconductor surface direction in air and indium antimonide semiconductor
DWith
FCalculating is tried to achieve:
Step 3 moves horizontally the indium antimonide semiconductor wafer along the direction of two blade blades, requires the most advanced and sophisticated distance with the indium antimonide semiconductor surface of cutting edge of two blades to remain unchanged in the moving process.When the semi-conductive edge of indium antimonide reaches blade; Vertical two blade blade directions move horizontally behind the indium antimonide semiconductor (displacement equals the distance between two blades) along the direction of two blade blades again and move horizontally the indium antimonide semiconductor, require the most advanced and sophisticated distance with the indium antimonide semiconductor surface of cutting edge of two blades to remain unchanged in the moving process.In said process, whether the data that the observation detector is surveyed change.If each position of indium antimonide semiconductor surface has all been passed through between two blades, but the data that detector is surveyed never change, and smooth, the near surface of this indium antimonide semiconductor surface does not have inherent vice so.If the data that detector was surveyed when semiconductor moved to the somewhere change, surface irregularity or the inner defectiveness of semiconductor between two blades this moment are described.
Step 4, the data that detector is surveyed when moving semiconductor to somewhere change, the position of fixing first blade, the position that changes second blade is to reduce the distance of two blades.Still the direction along two blade blades moves horizontally the indium antimonide semiconductor, the position when making first blade through detector data variation just now.If this moment, data that detector is surveyed still changed in indium antimonide semiconductor moving process; Then continue to change the position of second blade; Further reduce the distance of two blades; Position data that detector is surveyed when first blade changes through detector data just now no longer change, and then defective position, irregular position of indium antimonide semiconductor surface or indium antimonide semiconductor inside is near under second blade.
Step 5, the position of second blade of fine setting is to enlarge the distance of two blades.Still the direction along two blade blades moves horizontally the indium antimonide semiconductor; If first blade is during through the vicissitudinous position of detector data in abovementioned steps; Detector can just detect subtle change under peak response, so the inner defectiveness of the position indium antimonide semiconductor surface out-of-flatness of second blade below or indium antimonide semiconductor.If detector data does not change; So further finely tune the position of second blade; To enlarge the distance of two blades; Repeating this step has subtle change up to data that detector is surveyed, thereby confirms irregular particular location or the inner defective particular location of indium antimonide semiconductor, and this position is the below of second blade present position at this moment.
Step 6 keeps the distance of two blades in the step 2 to move horizontally the indium antimonide semiconductor, makes other positions of indium antimonide semiconductor surface through between two blades.Repeating above step can survey other position of indium antimonide semiconductor surface whether out-of-flatness or inherent vice are arranged.
Suppose that the semi-conductive surface of indium antimonide is square, can adopt method as shown in Figure 2 that semiconductor is moved.The initial position of blade 1 and blade 2 then through moving horizontally semiconductor, make blade 1 arrive A ' through AA ' straight line top, and blade 2 arrives B ' through BB ' straight line top respectively in the A and the B position of semiconductor surface among the figure.In this process, thereby whether position that subtle change judges out-of-flatness or defective is arranged whether between two straight line AA ' and BB ' through observing data that detector is surveyed.Move horizontally semiconductor then, make blade 1 arrive B ' top, and blade 2 arrives C ' top.Continuation make blade 1 arrive B through B ' B straight line top, and blade 2 arrives C through C ' C straight line top through moving horizontally semiconductor.In this process, thereby whether position that subtle change judges out-of-flatness or defective is arranged whether between two straight line BB ' and CC ' through observing data that detector is surveyed.Move horizontally semiconductor then, make blade 1 arrive the C top, and blade 2 arrives the D top.Continue to move semiconductor, make blade 1 and the straight line upper horizontal of blade 2 move along CC ' and DD '.By that analogy, between whole semi-conductive surface is all through two blades, thus the position of judgement out-of-flatness or defective.
In order to make detection more accurate, can change a direction and move semiconductor.As shown in Figure 2, the initial position of blade 1 and blade 2 then through moving horizontally semiconductor, make blade 1 arrive a ' through aa ' straight line top, and blade 2 arrives b ' through bb ' straight line top respectively in a and the b position of semiconductor surface among the figure.In this process, thereby whether position that subtle change judges out-of-flatness or defective is arranged whether between two straight line aa ' and bb ' through observing data that detector is surveyed.Then move horizontally semiconductor, make blade 1 arrive b ' top, and blade 2 arrives c ' top.Continuation make blade 1 arrive b through b ' b straight line top, and blade 2 arrives c through c ' c straight line top through moving horizontally semiconductor.In this process, thereby whether position that subtle change judges out-of-flatness or defective is arranged whether between two bb ' and cc ' through observing data that detector is surveyed.Move horizontally semiconductor then, make blade 1 arrive the c top, and blade 2 arrives the d top.Continue to move semiconductor, make blade 1 and the straight line upper horizontal of blade 2 move along cc ' and dd '.By that analogy, between whole semi-conductive surface is all through two blades, thus the position of judgement out-of-flatness or defective.
Step 7 adopts the incident wave of wideband also to repeat above-mentioned steps, so not only can survey indium antimonide semiconductor whether surface irregularity or inner defectiveness, but also can measure the depth range of inherent vice in the indium antimonide semiconductor that possibly exist.Because the attenuation distance of the surface plasma wave that electromagnetic wave produced in the indium antimonide semiconductor of different frequency in the wideband incident wave
δ m Different.In step 2, set forth attenuation distance
δ m Can be by the surface plasma wave edge perpendicular to the attenuation constant of indium antimonide semiconductor surface direction in the indium antimonide semiconductor
FCalculating is tried to achieve.So through the variation of ripple wave spectrum that detector is surveyed when the indium antimonide semiconductor moves of observation different frequency, just can be according to the depth range of different frequency ripple in the attenuation distance reckoning indium antimonide semiconductor inherent vice of the surface plasma wave of this indium antimonide semiconductor surface formation.Ripple incident such as 0.2THz-0.6THz; And under the temperature of 300K, detect; The pairing data variation of 0.2THz ripple was bigger after discovery indium antimonide semiconductor moved on to the somewhere; And the pairing data of the ripple of 0.3 THz-0.6THz almost do not change, and can calculate according to formula, and the about semiconductor surface of the degree of depth of indium antimonide semiconductor inherent vice is following between 9 μ m-10 μ m.
Claims (3)
1. based on the semiconductor defect detection method of surface plasma wave, be used to detect semiconductor surface flatness or semiconductive thin film inherent vice, it is characterized in that, may further comprise the steps:
Step 1, with two metal blades: first blade, second blade are placed in parallel in semi-conductive top to be measured, and blade is downward perpendicular to semiconductor surface and cutting edge; By the cutting edge of lateral first blade of first blade and the slit place transmission frequency between the semiconductor to be measured electromagnetic wave less than said semiconductor plasma frequency, the semiconductor surface between first blade and second blade has surface plasma wave to propagate; In fixed position, second blade outside one detector being set detects the electromagnetic wave that the slit place between second blade cutting edge and the semiconductor to be measured is coupled out;
Step 2, the position and the incident wave frequency of regulating two blades, make to meet the following conditions: the cutting edge of two blades and the distance between the upper semiconductor are less than the aerial attenuation distance of surface plasma wave; Distance between two blades is less than the propagation distance of surface plasma wave at semiconductor surface; Semi-conductive thickness is greater than the attenuation distance of surface plasma wave in semiconductor;
The cutting edge and the distance between the upper semiconductor of step 3, two blades of maintenance are constant; Change two blades and semiconductor relative position in the horizontal direction; Make each position of upper semiconductor all through the projection institute enclosing region of two blades at semiconductor surface; In this process, produce significant change like the detected signal of detector, then be positioned at semiconductor surface out-of-flatness or the inner defectiveness of two blades this moment in the projection institute enclosing region of semiconductor surface.
2. according to claim 1 based on the semiconductor defect detection method of surface plasma wave, it is characterized in that, also comprise:
The position of step 4, fixing first blade moves horizontally second blade two distances between the blade is reduced; Move horizontally semiconductor; Make projection the position through just now made detector signal change of first blade at semiconductor surface; If this moment, signal that detector is surveyed still changed in the semiconductor moving process; Then move horizontally second blade once more two distances between the blade are further reduced, and repeat above action once more, signal that detector is surveyed no longer changes in the semiconductor moving process;
The position of step 5, fine setting second blade is to enlarge the distance of two blades; Move horizontally semiconductor; Make projection the position through in step 4 make detector signal change of first blade at semiconductor surface; Such as the peak response of detector following the survey signal do not change, then finely tune the position of second blade once more, further increase the distance of two blades; And move horizontally semiconductor, make projection the position through in step 4 make detector signal change of first blade at semiconductor surface; Repeat above action, under peak response, can just detect subtle change until detector, then the inner defective position of semiconductor surface out-of-flatness or semiconductor is positioned at the below of second blade this moment;
Step 6, for detected other semiconductor surface out-of-flatness in the step 3 or inner defective position, repeating step 4, step 5, thus obtain semiconductor surface out-of-flatness or inner defective exact position.
3. like the said semiconductor defect detection method of claim 2, it is characterized in that, also comprise based on surface plasma wave:
Step 7, employing wideband incident wave and repeating step 1-step 6 are according to the depth range of different frequency ripple in the attenuation distance reckoning semiconductor inherent vice of the surface plasma wave of this semiconductor surface formation.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103776396A (en) * | 2012-10-17 | 2014-05-07 | 深圳富泰宏精密工业有限公司 | Flatness detection device |
| CN111279182A (en) * | 2019-01-18 | 2020-06-12 | 合刃科技（深圳）有限公司 | Method and system for detecting metal surface |
| CN112255509A (en) * | 2020-09-11 | 2021-01-22 | 中国空间技术研究院 | System and method for detecting insulation defect of equipment based on low-temperature plasma |
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| CN102087211A (en) * | 2010-12-08 | 2011-06-08 | 南京邮电大学 | Terahertz spectral analysis device and detection method for biofilm |
| CN102176521A (en) * | 2010-12-08 | 2011-09-07 | 南京邮电大学 | Terahertz surface plasma wave temperature control switch and control method thereof |
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| WO1999023472A1 (en) * | 1997-11-04 | 1999-05-14 | Micron Technology, Inc. | Method and apparatus employing external light source for endpoint detection |
| US20060091332A1 (en) * | 2000-09-21 | 2006-05-04 | Hitachi High-Technologies Corporation | Method and its apparatus for inspecting particles or defects of a semiconductor device |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103776396A (en) * | 2012-10-17 | 2014-05-07 | 深圳富泰宏精密工业有限公司 | Flatness detection device |
| CN103776396B (en) * | 2012-10-17 | 2017-12-22 | 深圳富泰宏精密工业有限公司 | Flatness checking device |
| CN111279182A (en) * | 2019-01-18 | 2020-06-12 | 合刃科技（深圳）有限公司 | Method and system for detecting metal surface |
| WO2020147096A1 (en) * | 2019-01-18 | 2020-07-23 | 合刃科技（深圳）有限公司 | Method and system for metal surface detection |
| CN112255509A (en) * | 2020-09-11 | 2021-01-22 | 中国空间技术研究院 | System and method for detecting insulation defect of equipment based on low-temperature plasma |
| CN112255509B (en) * | 2020-09-11 | 2023-12-29 | 中国空间技术研究院 | System and method for detecting insulation defect of equipment based on low-temperature plasma |
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