CN102632447A - Machining method of target surface - Google Patents
Machining method of target surface Download PDFInfo
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- CN102632447A CN102632447A CN2011100371436A CN201110037143A CN102632447A CN 102632447 A CN102632447 A CN 102632447A CN 2011100371436 A CN2011100371436 A CN 2011100371436A CN 201110037143 A CN201110037143 A CN 201110037143A CN 102632447 A CN102632447 A CN 102632447A
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Abstract
The invention discloses a machining method of a target surface, which belongs to the technical field of the machining process of the target surface. The method utilizes mechanical grinding and polishing equipment to machine. The invention provides equipment conditions for machining a target. A parallel roller shaft with an adjustable opening width is used, and water sand paper or cloth with the granularity of 20-2000 meshes covers the roller shaft; the water sand paper which is from the rough to the fine is firstly utilized and then the cloth is used; and meanwhile, de-ionized water is used for lubricating to grind and polish a metal material. After the grinding and the polishing, the high-pressure de-ionized water is used for washing the surface. In the specific application, the metal material comprises one or more of nickel, copper, silver, titanium, aluminum and vanadium. The machining method has advantages of no requirements on the target surface, fast grinding and polishing speed, no need of using cutting liquid and lubricating liquid for mechanically machining, no chemical reaction on the surface, thin stress layer, high whole uniformity, and no deformation of the whole body. The machining method of the target surface is a simple, reliable, economical and efficient machining method which is adapted to the target with a large area, a great length and a large thickness ratio.
Description
Technical field
The invention belongs to target material surface processing method technical field; The processing method that relates to a kind of target material surface; This method uses mechanical grinding and polishing equipment to carry out Surface Machining; And this method can be used for for example preparing sputtered target material (being physical vapor deposition target material material, " physical vapour deposition (PVD) " and " sputter " commutative use in this article).In concrete the application, sputtered target material can comprise one or more of nickel, copper, silver, titanium, aluminium, vanadium.Said sputtered target material can be called as " target material " hereinafter.
Background technology
The sputtered film material has extremely widely and uses in related industries such as electronic information, stored record and display.Simultaneously, the sputtering target material growth requirement amount that is accompanied by these industries also increases year by year.The quality of target has material impact to the performance of sputtered film; Especially the preparation of semiconductor integrated circuit chip develops (8,12 even 18 inches) towards the large scale direction; The size of sputtering target material and sputtering power also will increase thereupon, and be also increasingly high to the processing request of sputtering target material.The process technology of large-area target has become the key technology of target material assembly preparation.
The quality of the film that on silicon chip, forms through sputtering method can receive the influence of the target material surface that is used for sputter.The influence of target material surface comprises stressor layers and roughness.
There is one deck stressor layers in target material surface, and stressor layers and target interior tissue are different.When sputter, need carry out preparatory sputter (burn in) to target, purpose is for impurity and defectives such as the oxide that removes target material surface, stressor layers, guarantees the normally starting the arc and carry out sputter of target.
Stressor layers is thick more, and then the time of sputter is long more in advance, and efficient is low more, and the possibility that sputter procedure is exerted an influence is big more.
The roughness of target material surface also can exert an influence to sputter.When out-of-flatness or the projection that surpasses certain level when size is present in target surperficial, can on projection, produce paradoxical discharge.Said paradoxical discharge can cause bulky grain to sputter and be deposited on the silicon chip from target material surface.The bulky grain of deposition can form spot and cause the short circuit of semiconductive thin film circuit on film.
The roughness of target material surface directly influences the sputter effect, and the target material surface roughness is big more, and the possibility that paradoxical discharge takes place is big more, and the target material surface roughness is more little, and the possibility that paradoxical discharge takes place is more little.Therefore, through reducing the possibility that the target material surface roughness can reduce paradoxical discharge, can form the higher film of film quality thus than the target of higher roughness.
Many materials can be used as the material of sputtering target material, comprise for example simple metal materials such as nickel, copper, silver, titanium, aluminium.In concrete the application, target material can comprise alloy or other metal alloys.
The processing method commonly used of target material surface comprises: the processing of process equipments such as lathe, planer, milling machine, grinding machine, buffing.The roughness of lathe, planer, milling machine processing metallic can reach Ra 1.0 μ m, and the roughness that grinding machine processes is higher, can reach Ra 0.3 μ m.But for length and thickness proportion very big thin plate, particularly hardness and all very low simple metal thin plate of intensity, conventional method can't be installed to workpiece to be machined.Being installed of lathe, planer, milling machine all is to use fixedly workpiece to be machined of three to four claws, and for the thin plate that is installed, the claw of these equipment all can cause the problem that makes workpiece deformation.The ferrimagnet if the use grinding machine is installed, the method that can use electromagnetism to hold, but for thin plate; The frictional force that the emery wheel of diamond or white fused alumina contacts with workpiece to be machined is excessive, can cause the damage of workpiece, if the processing nonferromugnetic material; That can only push down workpiece to be machined grinds processing all around, does not reach the consistent effect of whole work-piece even surface roughness again, and; If use grinding machine to be not suitable for processing as the sticking partially material of character such as aluminium, nickel, titanium; Otherwise, can wheel face be stuck with paste, cause emery wheel to scrap.Buffing can make the surface reach very high precision; But buffing only is applicable to fine finishining; Target material surface flatness and the initial fineness of target are had high requirements,, then not only waste time and energy if the surface has out-of-flatness, surface to have granule to exist slightly or the initial coarse rugosity can not reach requirement; The waste polishing material, and can't reach the requirement of required surfacing homogeneous.
Simultaneously, when using conventional machine-tooled method to process target material surface, need cutting fluid, lubricating fluid to cool off, lubricate, can not guarantee that all lubricating fluids do not have chemical reaction to target material surface.
For the Surface Machining of the sputtering target material that carries out large tracts of land, length and thickness proportion, crucial problem be solve target after the roughing be installed, guarantee after the target material surface processing evenly, prevent the target distortion, improve working (machining) efficiency, problem such as prevent that the surface from being polluted.
Therefore according to above-mentioned situation; Need exploitation a kind of be suitable for preparing a kind of grinding and polishing power should be not excessive; And be suitable for that processing length and thickness proportion are big, the Apparatus and method for of the target of thinner thickness; Solve that traditional diamond-making technique can not process that this type length and thickness proportion are big, the problem of the target of thinner thickness, the inclined to one side viscosity of character, and the surface should not produce chemical reaction.
Summary of the invention
The present invention is in order to solve deficiency of the prior art; The invention provides a kind of processing method of target material surface; This method is used mechanical grinding and polishing equipment; Grinding and polishing processing is carried out on the surface of sheet metal, particularly comprised the application of length and thickness than the surperficial grinding and polishing of the metal sputtering target of higher, thinner thickness.It can realize using conventional grinding and polishing material; Reach finished product processing is carried out on large tracts of land, length and thickness proportion, thin metal sputtering target surface; Can prevent simultaneously the distortion of metal sputtering target, prevent the sputtering target material surface receive impurity and particle studded, avoid the surface to produce pollutions such as chemical change; Enhance productivity, reduce production costs.
Technical scheme of the present invention is following:
A kind of processing method of target material surface, this method use mechanical grinding and polishing equipment to carry out the target of Surface Machining length thickness proportion, comprise the steps:
1) processed target material surface is through mechanical roughing, and mechanical roughing comprises Vehicle Processing, mills processing, grinds processing, digs processing, and the surface roughness Ra after the roughing is at 1.0～20 μ m.
2) adopt mechanical grinding and polishing equipment that target material surface is carried out grinding and polishing, wherein said mechanical grinding and polishing equipment has two parallel roll shafts, and two parallel roll shafts can parallelly up and down move, the adjustable whole A/F of described parallel roll shaft, and A/F is between 1mm～50mm;
3) parcel abrasive band or cloth on the parallel roll shaft of mechanical grinding and polishing equipment; And the rotation of passing through roll shaft drives the abrasive band or cloth rotates, and the grinding and polishing target material surface utilizes the relative motion of abrasive band or cloth and target material surface to come target is carried out grinding and polishing; Use deionized water to wash, lubricate in the grinding and polishing process; The rotational line speed of abrasive band of wrapping up on the parallel roll shaft or cloth should be not less than 4m/s, and the roll shaft even angle rate of mechanical grinding and polishing equipment rotates, so that speed is even;
4) abrasive band on the mechanical grinding and polishing equipment is changed the abrasive band according to surface requirements according to order from coarse to fine, carries out grinding and polishing successively; The grinding and polishing target material surface can repeat repeatedly; To 2000 orders, described cloth is canvas, velvet or cloth Buddhist nun from 20 orders for the abrasive band of wrapping up on the parallel roll shaft, granularity;
5) carry out the high pressure de-ionized water rinse surface through the target material surface after the grinding and polishing, the surface requirements after the flushing does not have particle and impurity adheres to.
Method of the present invention is applicable to metal targets, and described metal targets material comprises pure metallic nickel, copper, silver, titanium, aluminium, vanadium, and the alloy of above-mentioned two or more metal.
The target material surface that described mechanical grinding and polishing apparatus processing obtains has the roughness of Ra 0.3～1.0 μ m.
The characteristics of this method are following:
1, target material surface adopts abrasive band and target relative motion and friction, the stressor layers on surface is dropped to minimum, and stress drops to minimum.
2, target need not to be installed, and compares with routine processing, does not have distortion basically, is specially adapted to the large tracts of land shape, and length and the bigger thin plate target of thickness proportion.
3, target adopts whole grinding and polishing, compares with the grinding and polishing of cloth wheel, and whole uniformity, working (machining) efficiency all are improved largely, and require much lower to the initial coarse rugosity.
4, target grinding and polishing process is used waterproof abrasive paper, compares with conventional mechanical processing, need not to use cutting fluid, lubricating fluid, has avoided target material surface to produce chemical reaction, need not subsequent treatment.
5, use high pressure de-ionized water rinse after the target grinding and polishing, further guarantee surface no-pollution, no particle residue.
Compare with existing method of surface finish, the present invention requires low to target material surface, and grinding and polishing speed is fast; Need not to use cutting fluid, the lubricating fluid of machined use; The no chemical reaction in surface, stressor layers is thin, and whole uniformity is high; Whole do not have a distortion, be a kind of simple, reliable, economical, be applicable to the processing method of large tracts of land, length and thickness proportion target efficiently.
The specific embodiment
Below, the processing of sputtering target material of the present invention is illustrated.
So far, on the commercial production, target is carried out the means of Surface Machining, mainly contain process equipments such as lathe, planer, milling machine, grinding machine.Roughness generally can reach about Ra 1.0 μ m, and grinding machine can reach about Ra0.3 μ m.But,, also there is not effective manufacturing process at present except using grinding machine for the higher metal material of length thickness ratio.And especially for the relatively more sticking material of character own, like nickel, aluminium, titanium etc., grinding machine is then inapplicable.And said method all need use cutting fluid to cool off and lubricate, and can not guarantee that target material surface does not have chemical reaction.And the grinding and polishing of cloth wheel needs long-time grinding and polishing to the target than thick surface quality, is easy to generate stressor layers, expends the grinding and polishing material, inefficiency.
Invention personnel of the present invention in order to improve the roughness on sputtering target material surface, improve working (machining) efficiency, prevent the target distortion, prevent that target material surface from polluting, and the thin plate target that especially the length thickness ratio is bigger has carried out contrast test.Through contrast test the present invention is more specified.
Embodiment 1
Two are processed into diameter through engine lathe is 400mm, and thickness is the pure nickel target blank of 3.3mm, continue to use engine lathe to carry out Surface Machining respectively and equipment according to the invention carries out Surface Machining.
Use engine lathe to add man-hour, engine lathe uses diamond tool, rotating speed 250r/min, depth of cut 0.1mm.By cylindrical entad portion machine.
After the completion of processing nickel target is taken off from the lathe claw.Find that target heart portion and external diameter are standing shape, distortion occurred owing to machining stress.
Use method of the present invention that nickel target base is carried out grinding and polishing, comprise the steps:
1) processed target blank surface is through lathe roughing, and the surface roughness Ra after the roughing is 1.7 μ m.
2) using mechanical grinding and polishing equipment to have two parallel roll shafts can parallelly up and down move, and can adjust A/F, and A/F is 3mm;
3) wrap up the waterproof abrasive paper abrasive band on the parallel roll shaft of mechanical grinding and polishing equipment, and drive the abrasive band rotation through the rotation of roll shaft, the grinding and polishing target material surface, the grinding and polishing process uses deionized water to wash, lubricate, and abrasive band rotational line speed is 4m/s, and speed is even;
4) diamond waterproof abrasive paper 200 order grinding and polishings 4 times are adopted in the abrasive band on the mechanical grinding and polishing equipment successively, are replaced by 800 order abrasive band grinding and polishings 4 times again, are replaced by 1200 order abrasive band grinding and polishings 4 times again;
5) through the target after the grinding and polishing of abrasive band, re-use Ni Bu and carry out surperficial grinding and polishing, parcel Buddhist nun cloth on the roll shaft, roll shaft opening degree 3mm, the Buddhist nun's cloth rotational line speed 7m/s that wraps up on the roll shaft uses deionized water rinsing and lubricated simultaneously, and grinding and polishing is 8 times altogether;
6) carry out the high pressure de-ionized water rinse surface through the target material surface after the grinding and polishing, the surface after the flushing requires no particle and impurity to adhere to through range estimation.
Completion of processing is not after distortion is found in check, and dimensional thickness is 3.1mm.Roughness Ra is 0.7 μ m.
Embodiment 2
Two is 800mm through planer roughing length, and width is 100mm, and thickness is the pure titanium target blank of 8.4mm, uses planer and grinding and polishing apparatus processing that the present invention adopted respectively.
Use the pure titanium target blank of planer processing, roughness Ra is 5.5 μ m.
Use mechanical grinding and polishing equipment to carry out the target of the length thickness proportion of Surface Machining, comprise the steps:
1) processed target material surface is through planer roughing, and the surface roughness Ra after the roughing is 5.5 μ m.
2) use mechanical grinding and polishing equipment to adjust parallel roll shaft A/F to 8mm;
3) wrap up the waterproof abrasive paper abrasive band on the parallel roll shaft of mechanical grinding and polishing equipment, and drive abrasive band and cloth rotation, grinding and polishing target material surface through the rotation of roll shaft; Use deionized water to wash, lubricate simultaneously; Abrasive band and target material surface are relative motions, and the rotational line speed in abrasive band is 10m/s, and speed is even;
4) abrasive band on the mechanical grinding and polishing equipment is adopted 400 order grinding and polishings 4 times, 800 order grinding and polishings 8 times, 1200 order grinding and polishings 8 times successively;
5) through the target after the grinding and polishing of abrasive band, re-use Ni Bu and carry out surperficial grinding and polishing, parcel Buddhist nun cloth on the roll shaft, roll shaft opening degree 5mm, the Buddhist nun's cloth rotational line speed 10m/s that wraps up on the roll shaft uses deionized water rinsing and lubricated simultaneously, and grinding and polishing is 8 times altogether;
6) carry out the high pressure de-ionized water rinse surface through the target after the grinding and polishing, the surface requirements after the flushing does not have particle and impurity adheres to.
According to the method for the invention, according to said process, the roughness Ra of target material surface is 0.4 μ m, does not find distortion.
Embodiment 3
Two block lengths are 100mm, and width is 100mm, and thickness is the fine copper target blank of 5.5mm.Use planer and grinding and polishing apparatus processing that the present invention adopted respectively.
Use the fine copper target blank of planer processing, roughness Ra is 6.3 μ m.
Use mechanical grinding and polishing equipment to carry out the target of Surface Machining, comprise the steps:
1) be 6.3 μ m through the rough machined copper target of planer blank surface roughness Ra;
2) two parallel roll shafts of the mechanical grinding and polishing equipment of adjustment, A/F is 5mm;
3) wrap up the waterproof abrasive paper abrasive band on the parallel roll shaft, and drive abrasive band and cloth rotation through the rotation of roll shaft, the grinding and polishing target material surface uses deionized water to wash, lubricate simultaneously, and the rotational line speed in abrasive band is 7m/s, and speed is even;
4) abrasive band on the mechanical grinding and polishing equipment is adopted 80 order grinding and polishings 4 times, 180 orders 4 times, 800 order grinding and polishings 6 times, 1200 order grinding and polishings 8 times successively;
5) through the target after the grinding and polishing of abrasive band, re-use velvet and carry out surperficial grinding and polishing, wrap up velvet on the roll shaft, roll shaft opening degree 5mm, the velvet rotational line speed 7m/s that wraps up on the roll shaft uses deionized water rinsing and lubricated simultaneously, and grinding and polishing is 8 times altogether;
6) carry out the high pressure de-ionized water rinse surface through the target material surface after the grinding and polishing, the surface requirements after the flushing does not have particle and impurity adheres to.
After the completion of processing, through check, the target material surface roughness Ra that uses method of the present invention to process is 0.4 μ m, does not find distortion.
The above; Be merely the preferable specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, any technical staff who is familiar with the present technique field is in the technical scope that the present invention discloses; The variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claim.
Claims (10)
1. the processing method of a target material surface is characterized in that this method comprises the steps:
(1) processed target material surface is carried out mechanical roughing;
(2) adopt mechanical grinding and polishing equipment that target material surface is carried out grinding and polishing, wherein said mechanical grinding and polishing equipment has parallel two mobile parallel roll shafts up and down, and the A/F of said parallel roll shaft can be adjusted;
(3) with the target material surface after the grinding and polishing of high pressure de-ionized water rinse process;
Wherein step (2) specifically comprises the steps:
(a) A/F with said parallel roll shaft is adjusted to required width;
(b) parcel abrasive band or cloth on parallel roll shaft; And the rotation of passing through roll shaft drives the abrasive band or cloth rotates the grinding and polishing target material surface; Utilize the relative motion of abrasive band or cloth and target material surface to come target is carried out grinding and polishing, use deionized water to wash, lubricate in the grinding and polishing process;
(c) abrasive band on the mechanical grinding and polishing equipment is changed the abrasive band according to the target material surface requirement according to the order that the granularity in abrasive band is from coarse to fine, carries out grinding and polishing successively.
2. according to the method for claim 1, it is characterized in that: the mechanical roughing in the step (1) comprises Vehicle Processing, mills processing, mill processing, dig in the processing one or more.
3. according to the method for claim 1, it is characterized in that: the rotational line speed of abrasive band of wrapping up on the parallel roll shaft or cloth is more than or equal to 4m/s, and the roll shaft even angle rate of mechanical grinding and polishing equipment rotates.
4. according to the method for claim 1, it is characterized in that: described abrasive band is a waterproof abrasive paper.
5. according to the method for claim 1, it is characterized in that: said cloth is canvas, velvet or cloth Buddhist nun.
6. according to the method for claim 1, it is characterized in that: step (c) wherein, according to the target material surface situation,
Use abrasive band from coarse to fine to carry out grinding and polishing successively, change at every turn that the grinding and polishing to target material surface repeats repeatedly behind the abrasive band.
7. according to the method for claim 1, it is characterized in that: after using the sand paper grinding and polishing, use cloth that target material surface is carried out grinding and polishing.
8. according to the method for claim 1, it is characterized in that: the thickness range of described target is 1mm～40mm, and the length of described target compares greater than 20: 1 with thickness.
9. according to the method for claim 1, it is characterized in that: the target material surface roughness Ra after step (1) roughing is at 1.0～20 μ m.
10. according to the method for claim 1, it is characterized in that: the target material surface that said mechanical grinding and polishing apparatus processing obtains has the roughness of Ra 0.3～1.0 μ m.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104668883A (en) * | 2013-12-03 | 2015-06-03 | 宁波江丰电子材料股份有限公司 | Processing method of target module sputtering surface |
| CN107866721A (en) * | 2016-09-26 | 2018-04-03 | 合肥江丰电子材料有限公司 | The processing method of target material assembly |
| CN111975465A (en) * | 2020-08-14 | 2020-11-24 | 合肥江丰电子材料有限公司 | Polishing process of molybdenum target sputtering surface |
| CN112828541A (en) * | 2021-01-04 | 2021-05-25 | 宁波江丰电子材料股份有限公司 | Tantalum target material and processing method of sputtering surface thereof |
| CN113021125A (en) * | 2021-03-04 | 2021-06-25 | 宁波江丰电子材料股份有限公司 | Method for treating titanium target sputtering surface |
| CN113442000A (en) * | 2021-06-08 | 2021-09-28 | 先导薄膜材料有限公司 | Preparation method of metallic bismuth planar target |
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| CN112828541A (en) * | 2021-01-04 | 2021-05-25 | 宁波江丰电子材料股份有限公司 | Tantalum target material and processing method of sputtering surface thereof |
| CN113021125A (en) * | 2021-03-04 | 2021-06-25 | 宁波江丰电子材料股份有限公司 | Method for treating titanium target sputtering surface |
| CN113442000A (en) * | 2021-06-08 | 2021-09-28 | 先导薄膜材料有限公司 | Preparation method of metallic bismuth planar target |
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Effective date of registration: 20130822 Address after: 102200 Changping District super Road, Beijing, No. 33 Applicant after: Youyan Yijin New Material Co., Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Applicant before: General Research Institute for Nonferrous Metals Applicant before: Youyan Yijin New Material Co., Ltd. |
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