CN102623310A - Preparation method of ohmic contact of metal with graphene - Google Patents
Preparation method of ohmic contact of metal with graphene Download PDFInfo
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- CN102623310A CN102623310A CN2012100931447A CN201210093144A CN102623310A CN 102623310 A CN102623310 A CN 102623310A CN 2012100931447 A CN2012100931447 A CN 2012100931447A CN 201210093144 A CN201210093144 A CN 201210093144A CN 102623310 A CN102623310 A CN 102623310A
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Abstract
The invention discloses a preparation method of ohmic contact of metal with graphene. The method includes preparing monolayer and a plurality of layers of graphene materials on a substrate through a micromechanical cleavage or a chemical vapor deposition (CVD) transferring method; spin-coating photoresist on the graphene materials; etching the photoresist on the graphene materials through optical lithography or an electron beam direct writing method, using a developer solution for development to form a source-drain image formed by the photoresist; removing residual gum with a degumming device, etching the graphene materials in a source-drain area, and destroying the lattice structure of the graphene materials to form defects simultaneously; using electron beam to evaporate or sputter on the sample surface where the defects form so as to deposit the metal; and stripping the photoresist and the metal on an active area and between the drain and the source on the sample surface so as to form the ohmic contact of the metal with the graphene. Compared with the existing ohmic contact of metal with graphene, the preparation method of the ohmic contact of the metal with the graphene overcomes the defect that state density of the grapheme nearby fermi level is small, and can obtain the ohmic contact of the metal with the graphene with small contact resistance.
Description
Technical field
The present invention relates to new material Graphene and semiconductor process techniques field, particularly a kind of method for preparing metal and Graphene ohmic contact is through reducing metal and the Graphene ohmic contact significantly improves transistorized DC characteristic and small-signal behaviour.
Background technology
Graphene is a kind of bi-dimensional cellular shape lattice structure that is constituted, had monatomic thickness by carbon atom.It has received everybody extensive concern with the characteristic of excellence, and wherein his electrology characteristic more has outstanding advantage: it is considered to the highest material of present mobility, and mobility is 100 times of Si material.Its saturation drift velocity is 6-7 a times of Si, and its Fermi's speed is 1/300 of the light velocity.Therefore using mineral carbon alkene can be realized higher operating frequency as the transistor of channel material, is considered to the important materials in Terahertz field.
Because the advantage that it is outstanding, the graphene field effect pipe is rapid in development in recent years.In December, 2006, people such as German M.C.Lemme prepare first Graphene double-gated devices.American I BM company prepared the graphene field effect pipe that cut-off frequency reaches 26GHz, 100GHz, 170GHz respectively at 2008,2009,2010.University of California in Los Angeles has realized that in 2010 cut-off frequency is the Graphene transistor of 300GHz.But the further lifting of graphene field effect pipe performance has received very big obstruction, and the contact resistance of FET is excessive, and the pressure drop of source drain terminal accounts for whole source, and to leak institute alive about 3/4, and this has influenced the lifting of device performance greatly.
Therefore reduce the emphasis that metal and Graphene ohmic contact resistance become graphene device research.
Summary of the invention
The technical problem that (one) will solve
In order to significantly improve the performance of graphene field effect pipe, main purpose of the present invention is to provide a kind of method for preparing metal and Graphene ohmic contact, to reduce the ohmic contact resistance of metal and Graphene.
(2) technical scheme
To achieve these goals, the invention provides a kind of method for preparing metal and Graphene ohmic contact, may further comprise the steps: on substrate, peel off method or the CVD transfer method prepares individual layer and minority layer graphene material with micromechanics; Spin coating photoresist on this grapheme material; Photoresist on the method etching grapheme material of employing optical lithography or electron-beam direct writing, and use developing liquid developing, form the source leakage graphic that constitutes by photoresist; Remove cull with removing the glue instrument, the grapheme material to source-drain area carries out etching then, destroys the lattice structure of grapheme material simultaneously, forms defective; Adopt electron beam evaporation or sputter at the sample surfaces depositing metal that forms defective; Photoresist and metal between the drain electrode of peel sample surface source on the active area form metal and Graphene ohmic contact.
In the such scheme, the photoresist of said spin coating on grapheme material is a kind of among the positive glue of photoetching 9912, photoresist AZ5214, electron beam adhesive PMMA, the electron beam adhesive UVIII.
In the such scheme, in the said step with developing liquid developing, the developer solution that photoresist is corresponding is respectively: the developer solution of positive glue 9912 and electron beam adhesive is that the developer solution of CD26, electron beam adhesive PMMA is an ortho-xylene.
In the such scheme, said usefulness is removed the glue instrument and is removed in the step of cull, and said to remove the glue instrument be to utilize the Matrix of oxygen plasma or utilize the ultraviolet UV of oxygen.
In the such scheme, said grapheme material to source-drain area carries out in the step of etching, is to adopt in Matrix, RIE etching machine, the UV instrument to realize the etching to grapheme material with oxygen source.
In the such scheme, said employing electron beam evaporation or sputter in the step of the sample surfaces depositing metal that forms defective, said metal are a kind of among Ti/Au, Ti/Pt/Au, Ti/Al/Au, Ni, Ni/Au, Cr/Au, Pd, Ti/Pd/Au, the Pd/Au.
In the such scheme; In the photoresist between the said peel sample surface source drain electrode on the active area and the step of metal; Be to adopt hot acetone to peel off; Sample is immersed in 50 ℃ the hot acetone 30 minutes, except the metal in source drain contact zone, other local metals all come off along with the dissolving of photoresist after immersion.
(3) beneficial effect
The method for preparing metal and Graphene ohmic contact provided by the invention; Destroyed unnecessary photoresist with oxygen plasma or oxygen ultraviolet ray; And destroyed the complete lattice structure of Graphene; Let in the graphene-doped lattice of metals deposited atom, be combined into a kind of new combination, obtain the little a lot of metallic graphite carbon alkene ohmic contact of a kind of contact resistance at last thereby become original metal and the molecular force between the Graphene.
Description of drawings
Fig. 1 is the method flow diagram for preparing metal and Graphene ohmic contact according to the embodiment of the invention;
Fig. 2 is a sketch map of on substrate, preparing the single-layer graphene material according to the embodiment of the invention;
Fig. 3 be according to the embodiment of the invention with sol evenning machine at the sketch map of sparing electron beam adhesive PMMA on the sample;
Fig. 4 writes the sketch map that depicts the source leakage graphic with corresponding developer solution according to the embodiment of the invention with direct electronic beam;
Fig. 5 removes the residual photoresist on source-drain area surface and the sketch map of destruction Graphene lattice according to the embodiment of the invention with UV;
Fig. 6 is the sketch map according to embodiment of the invention electron beam evaporation metal;
Fig. 7 peels off with hot acetone according to the embodiment of the invention to obtain having the sketch map that the back of the body gate device of ohmic contact is leaked in good source.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, to further explain of the present invention.
The invention provides a kind of method for preparing metal and Graphene ohmic contact; Be on graphene film, to realize component graphics with optical lithography or electron-beam direct writing; Graphene to contact area shines with oxygen ultraviolet ray or oxygen plasma; Make the Graphene of contact area the part carbon atom occur and come off that the final evaporation metal is realized metal and Graphene ohmic contact.
As shown in Figure 1, Fig. 1 is the method flow diagram for preparing metal and Graphene ohmic contact according to the embodiment of the invention, and this method may further comprise the steps:
Step 1: on substrate, peel off method or the CVD transfer method prepares individual layer and minority layer graphene material with micromechanics;
Step 2: spin coating photoresist on this grapheme material;
Step 3: the photoresist on the method etching grapheme material of employing optical lithography or electron-beam direct writing, and use developing liquid developing, form the source leakage graphic that constitutes by photoresist;
Step 4: remove cull with removing the glue instrument, the grapheme material to source-drain area carries out etching then, destroys the lattice structure of grapheme material simultaneously, forms defective;
Step 5: adopt electron beam evaporation or sputter at the sample surfaces depositing metal that forms defective;
Step 6: photoresist and metal between the drain electrode of peel sample surface source on the active area form metal and Graphene ohmic contact.
Wherein, described in the step 2 on grapheme material the photoresist of spin coating be a kind of among the positive glue of photoetching 9912, photoresist AZ5214, electron beam adhesive PMMA, the electron beam adhesive UVIII.In the step with developing liquid developing described in the step 3, the developer solution that photoresist is corresponding is respectively: the developer solution of positive glue 9912 and electron beam adhesive is that the developer solution of CD26, electron beam adhesive PMMA is an ortho-xylene.
Remove in the step of cull with removing the glue instrument described in the step 4, said to remove the glue instrument be to utilize the Matrix of oxygen plasma or utilize the ultraviolet UV of oxygen.Grapheme material to source-drain area described in the step 4 carries out in the step of etching, is to adopt in Matrix, RIE etching machine, the UV instrument to realize the etching to grapheme material with oxygen source.
Adopt electron beam evaporation described in the step 5 or sputter in the step of the sample surfaces depositing metal that forms defective, said metal is a kind of among Ti/Au, Ti/Pt/Au, Ti/Al/Au, Ni, Ni/Au, Cr/Au, Pd, Ti/Pd/Au, the Pd/Au.
In the photoresist between the drain electrode of the surface source of peel sample described in the step 6 on the active area and the step of metal; Be to adopt hot acetone to peel off; Sample is immersed in 50 ℃ the hot acetone 30 minutes; Except the metal in source drain contact zone, other local metals all come off along with the dissolving of photoresist after immersion.
Fig. 2 peels off the individual layer that method or CVD method prepare or the sketch map of minority layer graphene material for adopt micromechanics according to the embodiment of the invention on substrate.Select Si/SiO for use
2Be substrate, wherein the SiO of thermal oxidation
2Thickness for 90nm.Experiment for ease, the micromechanics that we select for use is peeled off the grapheme material of method preparation, probably judges individual layer and minority layer graphene through light microscope, utilizes the Raman spectrum of Raman spectrometer test Graphene to come the concrete Graphene number of plies of identifying at last.What use among the embodiment is single-layer graphene.
Fig. 3 is the sketch map according to embodiment of the invention photoresist in spin coating on the grapheme material.Present embodiment is spin coating electron beam adhesive PMMA on the single-layer graphene film, and the spin coating process is accomplished with sol evenning machine, and the spin coating rotating speed is: 3 seconds 400-600rpm of preceding commentaries on classics, 60 seconds 1500-3000rpm are changeed in the back.
Fig. 4 writes the sketch map that forms the source leakage graphic that is made up of photoresist with corresponding developer solution according to the embodiment of the invention with direct electronic beam.What adopt among the embodiment is the mode of electron-beam direct writing, baking before needing before the electron-beam direct writing, and 180 ℃ of baking ovens dried by the fire one hour among the embodiment.The dosage of electron-beam direct writing is 700-1000.Just can access the required source leakage graphic that is made up of photoresist at last through developing, with ortho-xylene development 3 minutes, nitrogen dried up.
Fig. 5 removes the residual photoresist on source-drain area surface and the sketch map of destruction Graphene lattice according to the embodiment of the invention with UV.Be that grapheme material to source-drain area carries out etching among the embodiment; In UV with oxygen ultraviolet irradiation sample; Need carry out preheating to instrument UV at pre-irradiation, general preheating 10 minutes is put into the sample that the UV irradiation just can obtain having certain lattice defect in 3-6 minute with sample again; The grapheme material of active area all under the protection of photoresist PMMA, does not worry that it influences the character of active area grapheme material in irradiation process.
In definite irradiation time process, carried out a large amount of experiments, when finding with the oxygen ultraviolet irradiation Graphene among the UV; After having shone 2 minutes, the photoresist of source and drain areas is by full scale clearance to the Graphene of individual layer, and single-layer graphene begins to occur a spot of defective; Continue irradiation, in 4 minutes, an amount of defective occurred; Can be used for realizing good metal Graphene ohmic contact; And after irradiation 6 minutes, the Graphene of source and drain areas is almost by full scale clearance, so we selected the oxygen ultraviolet irradiation for use 4 minutes.On the problem whether what and the Graphene of confirming defective also exist, we have adopted Raman spectrometer and AFM.
Fig. 6 is the sketch map according to embodiment of the invention electron beam evaporation metal.At depositing metal on the sample of peroxide ultraviolet irradiation, what adopt among the embodiment is the compound mode of Ti/Pt/Au, and deposited by electron beam evaporation realizes.Why adopting this compound mode, is because Graphene can not directly combine with Au, needs a kind of adhesion preferred metal, the Ti of the 2nm that we adopt.If directly adopt the Ti/Au metal system in addition, Au diffusion can appear, and very big to contact and influence, therefore between Ti and Au, add the Pt of a kind of metal 20nm of transition nature.The metal system that adopts among the embodiment is 2nmTi/20nmPt/100nmAu.
Fig. 7 peels off with hot acetone according to the embodiment of the invention to obtain having the sketch map that the back of the body gate device of ohmic contact is leaked in good source.With evaporated metal sample peel off out; The general hot acetone that adopts is peeled off; Sample is immersed in the hot acetone about 50 ℃ 30 minutes, because photoresist PMMA is dissolved in hot acetone, therefore after immersion; Except the metal in source drain contact zone, other local metals all come off along with the dissolving of photoresist.Obtain having the back of the body gate device of good ohmic contact at last.
Through DC test, the metal that this method of employing realizes among the discovery embodiment reduces about 5 times with the contact resistance of the ohmic contact of Graphene than general metallic graphite carbon alkene ohmic contact resistance.This has reduced source-drain voltage greatly and has been wasted in the pressure drop that synapsis is missed in the source, for the device of realizing higher frequency lays the foundation.
Experiment showed, that method of the present invention is effective, can on bigger degree, reduce the ohmic contact resistance of metal and Graphene.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. a method for preparing metal and Graphene ohmic contact is characterized in that, may further comprise the steps:
On substrate, peel off method or the CVD transfer method prepares individual layer and minority layer graphene material with micromechanics;
Spin coating photoresist on this grapheme material;
Photoresist on the method etching grapheme material of employing optical lithography or electron-beam direct writing, and use developing liquid developing, form the source leakage graphic that constitutes by photoresist;
Remove cull with removing the glue instrument, the grapheme material to source-drain area carries out etching then, destroys the lattice structure of grapheme material simultaneously, forms defective;
Adopt electron beam evaporation or sputter at the sample surfaces depositing metal that forms defective;
Photoresist and metal between the drain electrode of peel sample surface source on the active area form metal and Graphene ohmic contact.
2. the method for preparing metal and Graphene ohmic contact according to claim 1; It is characterized in that the photoresist of said spin coating on grapheme material is a kind of among the positive glue of photoetching 9912, photoresist AZ5214, electron beam adhesive PMMA, the electron beam adhesive UVIII.
3. the method for preparing metal and Graphene ohmic contact according to claim 2; It is characterized in that; In the said step with developing liquid developing, the developer solution that photoresist is corresponding is respectively: the developer solution of positive glue 9912 and electron beam adhesive is that the developer solution of CD26, electron beam adhesive PMMA is an ortho-xylene.
4. the method for preparing metal and Graphene ohmic contact according to claim 1 is characterized in that, said usefulness is removed the glue instrument and removed in the step of cull, and said to remove the glue instrument be to utilize the Matrix of oxygen plasma or utilize the ultraviolet UV of oxygen.
5. the method for preparing metal and Graphene ohmic contact according to claim 1; It is characterized in that; Said grapheme material to source-drain area carries out in the step of etching, is to adopt in Matrix, RIE etching machine, the UV instrument to realize the etching to grapheme material with oxygen source.
6. the method for preparing metal and Graphene ohmic contact according to claim 1; It is characterized in that; Said employing electron beam evaporation or sputter in the step of the sample surfaces depositing metal that forms defective, said metal are a kind of among Ti/Au, Ti/Pt/Au, Ti/Al/Au, Ni, Ni/Au, Cr/Au, Pd, Ti/Pd/Au, the Pd/Au.
7. the method for preparing metal and Graphene ohmic contact according to claim 1; It is characterized in that; In the photoresist between the drain electrode of said peel sample surface source on the active area and the step of metal, be to adopt hot acetone to peel off, sample be immersed in 50 ℃ the hot acetone 30 minutes; Except the metal in source drain contact zone, other local metals all come off along with the dissolving of photoresist after immersion.
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| CN102945794A (en) * | 2012-09-07 | 2013-02-27 | 清华大学 | Two-dimensional electronic material device and mixed photoetching method thereof |
| CN103151265A (en) * | 2013-01-31 | 2013-06-12 | 西安电子科技大学 | Manufacturing method of silicon (Si) substrate upper side grid grapheme field effect tube based on copper (Cu) film annealing |
| CN103151246A (en) * | 2013-01-31 | 2013-06-12 | 西安电子科技大学 | Side grid grapheme transistor manufacturing method based on copper (Cu) film annealing and chlorine reaction |
| CN103165470A (en) * | 2013-01-31 | 2013-06-19 | 西安电子科技大学 | Preparing method of side grid graphene transistor based on copper (Cu) membrane annealing and chlorine (Cl2) reaction |
| CN103165468A (en) * | 2013-01-31 | 2013-06-19 | 西安电子科技大学 | Preparing method of side grid graphene transistor through reaction of silicon carbide (SiC) and chlorine gas (Cl2) based on copper (Cu) membrane annealing |
| CN103165469A (en) * | 2013-01-31 | 2013-06-19 | 西安电子科技大学 | Preparing method of side grid graphene transistor on silicon (Si) substrate based on copper (Cu) membrane annealing |
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| CN103579350A (en) * | 2013-10-23 | 2014-02-12 | 清华大学 | Grapheme field-effect transistor and forming method thereof |
| CN104051239A (en) * | 2014-06-26 | 2014-09-17 | 重庆墨希科技有限公司 | Patterning method for graphene film |
| CN104166307A (en) * | 2014-08-14 | 2014-11-26 | 深圳市贝特瑞纳米科技有限公司 | Graphical method for graphene thin film, functional device and application of graphene thin film |
| CN104253015A (en) * | 2013-06-25 | 2014-12-31 | 中国科学院微电子研究所 | Method for reducing contact resistance of two-dimensional crystal material |
| CN104851787A (en) * | 2015-04-01 | 2015-08-19 | 中国科学院上海微系统与信息技术研究所 | Method for improving ohmic contact between metal electrode and graphene |
| CN105224717A (en) * | 2015-09-06 | 2016-01-06 | 中国科学院微电子研究所 | The computing method of the cutoff frequency of the small-signal model of grapheme transistor |
| CN105551949A (en) * | 2015-12-11 | 2016-05-04 | 中国电子科技集团公司第五十五研究所 | Method of adopting two-dimensional graphene thin film to improve conductivity of substrate during electron beam nano gate writing |
| CN105762194A (en) * | 2016-05-10 | 2016-07-13 | 中国科学院微电子研究所 | Graphene field effect transistor and manufacturing method thereof |
| CN107275219A (en) * | 2017-05-27 | 2017-10-20 | 中国科学院微电子研究所 | A kind of manufacture method of graphene device |
| CN111747372A (en) * | 2019-03-26 | 2020-10-09 | 北京清正泰科技术有限公司 | Metal cover graphite island without edge protrusions and preparation method thereof |
| US11222959B1 (en) * | 2016-05-20 | 2022-01-11 | Hrl Laboratories, Llc | Metal oxide semiconductor field effect transistor and method of manufacturing same |
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| CN105551949B (en) * | 2015-12-11 | 2018-10-26 | 中国电子科技集团公司第五十五研究所 | The method that substrate conduction during electron beam nanometer grid are inscribed is improved using two-dimensional graphene film |
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