CN102620592B - 应用于半导体激光器的液体制冷器的制备方法及其制冷装置 - Google Patents
应用于半导体激光器的液体制冷器的制备方法及其制冷装置 Download PDFInfo
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CN201210104690.6A CN102620592B (zh) | 2012-04-11 | 2012-04-11 | 应用于半导体激光器的液体制冷器的制备方法及其制冷装置 |
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CN102620592B true CN102620592B (zh) | 2014-06-04 |
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Families Citing this family (4)
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CN104795726B (zh) * | 2015-05-05 | 2018-04-20 | 中国科学院武汉物理与数学研究所 | 整体制冷能工作在零摄氏度以下的半导体激光装置 |
CN105742955B (zh) * | 2016-05-12 | 2019-03-29 | 核工业理化工程研究院 | 半导体激光二极管肋片式散热装置 |
CN111326949B (zh) * | 2018-12-15 | 2023-04-11 | 深圳市中光工业技术研究院 | 激光器芯片的制造方法及激光器芯片 |
CN112366512A (zh) * | 2020-09-28 | 2021-02-12 | 北京凯普林光电科技股份有限公司 | 一种半导体激光器散热结构 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US6307871B1 (en) * | 1998-09-11 | 2001-10-23 | Cutting Edge Optronics, Inc. | Laser system using phase change material for thermal control |
CN1671020A (zh) * | 2004-08-27 | 2005-09-21 | 中国科学院长春光学精密机械与物理研究所 | 用于高功率垂直腔面发射激光器的组合型散热装置及制备 |
CN101854027A (zh) * | 2010-04-30 | 2010-10-06 | 西安炬光科技有限公司 | 一种用于半导体激光器的液体制冷器 |
CN202602082U (zh) * | 2012-04-11 | 2012-12-12 | 西安炬光科技有限公司 | 半导体激光器液体制冷装置 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US6307871B1 (en) * | 1998-09-11 | 2001-10-23 | Cutting Edge Optronics, Inc. | Laser system using phase change material for thermal control |
CN1671020A (zh) * | 2004-08-27 | 2005-09-21 | 中国科学院长春光学精密机械与物理研究所 | 用于高功率垂直腔面发射激光器的组合型散热装置及制备 |
CN101854027A (zh) * | 2010-04-30 | 2010-10-06 | 西安炬光科技有限公司 | 一种用于半导体激光器的液体制冷器 |
CN202602082U (zh) * | 2012-04-11 | 2012-12-12 | 西安炬光科技有限公司 | 半导体激光器液体制冷装置 |
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Address after: 710077 high power semiconductor laser Industrial Park, Shaanxi, Xi'an, Shaanxi Province, No. 86, No. 56 Patentee after: FOCUSLIGHT TECHNOLOGIES INC. Address before: 710119 high tech Zone, Shaanxi, Xi'an new industrial park information Avenue, building 17, building three, floor 10 Patentee before: Xi'an Focuslight Technology Co., Ltd. |
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Denomination of invention: Preparation method for liquid refrigerator applied to semiconductor laser and refrigerating device for semiconductor laser Effective date of registration: 20161027 Granted publication date: 20140604 Pledgee: Xi'an high tech emerging industry investment fund partnership (limited partnership) Pledgor: FOCUSLIGHT TECHNOLOGIES INC. Registration number: 2016610000050 |
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