CN102610270B - 存储元件和存储器装置 - Google Patents

存储元件和存储器装置 Download PDF

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Publication number
CN102610270B
CN102610270B CN201210018100.8A CN201210018100A CN102610270B CN 102610270 B CN102610270 B CN 102610270B CN 201210018100 A CN201210018100 A CN 201210018100A CN 102610270 B CN102610270 B CN 102610270B
Authority
CN
China
Prior art keywords
layer
magnetization
memory
memory element
accumulation layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201210018100.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN102610270A (zh
Inventor
内田裕行
细见政功
别所和宏
大森广之
肥后丰
浅山彻哉
山根阳
山根一阳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN102610270A publication Critical patent/CN102610270A/zh
Application granted granted Critical
Publication of CN102610270B publication Critical patent/CN102610270B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
CN201210018100.8A 2011-01-18 2012-01-11 存储元件和存储器装置 Expired - Fee Related CN102610270B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011007666A JP2012151213A (ja) 2011-01-18 2011-01-18 記憶素子、メモリ装置
JP2011-007666 2011-01-18

Publications (2)

Publication Number Publication Date
CN102610270A CN102610270A (zh) 2012-07-25
CN102610270B true CN102610270B (zh) 2016-08-03

Family

ID=46490648

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210018100.8A Expired - Fee Related CN102610270B (zh) 2011-01-18 2012-01-11 存储元件和存储器装置

Country Status (3)

Country Link
US (1) US8559219B2 (enExample)
JP (1) JP2012151213A (enExample)
CN (1) CN102610270B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5786341B2 (ja) * 2010-09-06 2015-09-30 ソニー株式会社 記憶素子、メモリ装置
US10586832B2 (en) 2011-02-14 2020-03-10 Attopsemi Technology Co., Ltd One-time programmable devices using gate-all-around structures
US9461242B2 (en) 2013-09-13 2016-10-04 Micron Technology, Inc. Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
US9608197B2 (en) 2013-09-18 2017-03-28 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US9281466B2 (en) 2014-04-09 2016-03-08 Micron Technology, Inc. Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
US20150299850A1 (en) * 2014-04-16 2015-10-22 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Graphene Spin Filters via Chemical Vapor Deposition
KR102245748B1 (ko) 2014-09-12 2021-04-29 삼성전자주식회사 자기 기억 소자 및 이의 제조 방법
US9349945B2 (en) 2014-10-16 2016-05-24 Micron Technology, Inc. Memory cells, semiconductor devices, and methods of fabrication
US9768377B2 (en) 2014-12-02 2017-09-19 Micron Technology, Inc. Magnetic cell structures, and methods of fabrication
US10439131B2 (en) 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
US11615859B2 (en) 2017-04-14 2023-03-28 Attopsemi Technology Co., Ltd One-time programmable memories with ultra-low power read operation and novel sensing scheme

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007173597A (ja) * 2005-12-22 2007-07-05 Tdk Corp 磁気メモリ
CN101150169A (zh) * 2006-09-21 2008-03-26 阿尔卑斯电气株式会社 CoFeB层构成固定层至少一部分的隧道型磁检测元件及其制法
CN101266831A (zh) * 2007-03-15 2008-09-17 索尼株式会社 存储元件和存储器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0959475A3 (en) * 1998-05-18 2000-11-08 Canon Kabushiki Kaisha Magnetic thin film memory and recording and reproducing method and apparatus using such a memory
US6130814A (en) 1998-07-28 2000-10-10 International Business Machines Corporation Current-induced magnetic switching device and memory including the same
JP2003017782A (ja) 2001-07-04 2003-01-17 Rikogaku Shinkokai キャリヤスピン注入磁化反転型磁気抵抗効果膜と該膜を用いた不揮発性メモリー素子及び該素子を用いたメモリー装置
WO2010100678A1 (ja) * 2009-03-06 2010-09-10 株式会社日立製作所 トンネル磁気記録素子、磁気メモリセル及び磁気ランダムアクセスメモリ
JP5232206B2 (ja) * 2010-09-21 2013-07-10 株式会社東芝 磁気抵抗素子及び磁気ランダムアクセスメモリ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007173597A (ja) * 2005-12-22 2007-07-05 Tdk Corp 磁気メモリ
CN101150169A (zh) * 2006-09-21 2008-03-26 阿尔卑斯电气株式会社 CoFeB层构成固定层至少一部分的隧道型磁检测元件及其制法
CN101266831A (zh) * 2007-03-15 2008-09-17 索尼株式会社 存储元件和存储器

Also Published As

Publication number Publication date
JP2012151213A (ja) 2012-08-09
CN102610270A (zh) 2012-07-25
US8559219B2 (en) 2013-10-15
US20120182796A1 (en) 2012-07-19

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GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160803