CN102609242A - 电子装置及其内存控制方法以及相关计算机可读取储存媒体 - Google Patents
电子装置及其内存控制方法以及相关计算机可读取储存媒体 Download PDFInfo
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CN201110033205.6A CN102609242B (zh) | 2011-01-24 | 2011-01-24 | 电子装置及其内存控制方法以及相关计算机可读取储存媒体 |
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CN102609242B CN102609242B (zh) | 2015-09-30 |
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Cited By (1)
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WO2020015136A1 (zh) * | 2018-07-20 | 2020-01-23 | 江苏华存电子科技有限公司 | 一种利用闪存引脚提升反应速率方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1473397A (zh) * | 2001-08-20 | 2004-02-04 | ���ǵ�����ʽ���� | 在移动台中交接调制解调器和存储器的设备和方法 |
US20050160219A1 (en) * | 2004-01-20 | 2005-07-21 | Samsung Electronics Co., Ltd. | Apparatus and method for booting NAND flash memory of a mobile terminal |
EP1681628A1 (en) * | 2005-01-14 | 2006-07-19 | Telefonaktiebolaget LM Ericsson (publ) | Method and device for initializing a booting procedure of a mobile device |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1473397A (zh) * | 2001-08-20 | 2004-02-04 | ���ǵ�����ʽ���� | 在移动台中交接调制解调器和存储器的设备和方法 |
US20050160219A1 (en) * | 2004-01-20 | 2005-07-21 | Samsung Electronics Co., Ltd. | Apparatus and method for booting NAND flash memory of a mobile terminal |
EP1681628A1 (en) * | 2005-01-14 | 2006-07-19 | Telefonaktiebolaget LM Ericsson (publ) | Method and device for initializing a booting procedure of a mobile device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2020015136A1 (zh) * | 2018-07-20 | 2020-01-23 | 江苏华存电子科技有限公司 | 一种利用闪存引脚提升反应速率方法 |
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Effective date of registration: 20201027 Address after: No. 1, Xingzhu Road, Hsinchu Science Park, Taiwan, China Patentee after: MEDIATEK Inc. Address before: 405, 4th floor, 1st District, Shenzhen Bay science and technology ecological park, Aohai street, Nanshan District, Shenzhen City, Guangdong Province Patentee before: Mstar Semiconductor,Inc. Patentee before: MEDIATEK Inc. Effective date of registration: 20201027 Address after: 405, 4th floor, 1st District, Shenzhen Bay science and technology ecological park, Aohai street, Nanshan District, Shenzhen City, Guangdong Province Patentee after: Mstar Semiconductor,Inc. Patentee after: MEDIATEK Inc. Address before: 518057, Guangdong, Shenzhen hi tech Zone, South District, science and technology, South ten road, Shenzhen Institute of Aerospace Science and technology innovation, C block, building 4 Patentee before: Mstar Semiconductor,Inc. Patentee before: MSTAR SEMICONDUCTOR Inc. |
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