CN102598237A - Methods and arrangement for detecting a wafer-released event within a plasma processing chamber - Google Patents
Methods and arrangement for detecting a wafer-released event within a plasma processing chamber Download PDFInfo
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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Abstract
A method for identifying an optimal time for mechanically removing a substrate from a lower electrode in a processing chamber of a plasma processing system is provided. The method includes employing a set of sensors to monitor a set of electrical characteristics of a plasma, wherein the plasma is formed over the substrate during a dechuck event. The method also includes sending processing data about the set of electrical characteristics to a data collection device. The method further includes comparing the processing data against a set of threshold values. The method yet also includes, if the processing data traverses the threshold values, removing the substrate from the lower electrode since a substrate-released event has occurred.
Description
Background technology
The Cement Composite Treated by Plasma development of technology provides development to semicon industry.In order to make manufacturing company have competitiveness, manufacturing company need keep high yield to minimize the damage of substrate processing simultaneously.Therefore, be the necessary condition that obtains high yield with substrate from the ability that bottom electrode (like electrostatic chuck) shifts out and damaged substrate does not minimize the release stand-by period simultaneously.
Know clearly it, during processing substrate, substrate is clamped on the bottom electrode (like electrostatic chuck) usually.Can implement to clamp between this substrate and this bottom electrode, to generate the static clamping force through apply direct current (DC) current potential to bottom electrode.For the heat on dissipation substrate during the processing substrate, can inert gas (like helium) be applied to substrate back to improve the heat transmission between substrate and the bottom electrode through various passages in the bottom electrode.Therefore, because the helium pressure on the substrate needs high relatively electrostatic charging so that substrate is clamped to bottom electrode.
In case in process chamber, accomplished processing substrate, closed clamp voltage and substrate is risen and from process chamber, shifts out from bottom electrode.In order under the prerequisite of damaged substrate not, substrate to be risen from bottom electrode, will take off card incident (dechucking event), in this incident, the electrostatic charge discharge on the substrate is so that remove the gravitation between substrate and the bottom electrode.
In most cases, through generate plasma with in substrate on electrostatic charge implement the electrostatic charge on the substrate is discharged.In case removed electrostatic charge, can use the lifter pin that is arranged on bottom electrode substrate upwards to be risen, thereby let robotic arm that substrate is shifted out from plasma processing chamber so that substrate and electrostatic chuck surface are separated.
If electrostatic charge removes from substrate unsatisfactorily, then to attempt substrate when bottom electrode upwards rises when lifter pin, the part substrate possibly still be clamped on the bottom electrode.In this case, may destroy substrate.Further, substrate fragments possibly polluted process chamber, thereby process chamber needs cleaning.Possibly need great amount of time and energy to go the chamber of enforcement cleaning.In some cases, the chamber cleaning possibly need plasma process system to roll off the production line.Thereby because increase substrate waste and the cost of increase instrument own, the unfavorable card that takes off is expensive to the instrument owner.
Owing to take off card improperly serious like this consequence arranged, carry out usually and take off the card incident special time cycle is arranged, this cycle be quite guard make substrate and bottom electrode take off card so that guarantee the enough time that electrostatic charge is fully discharged.Consider that the special time cycle is quite long, suppose that substrate and bottom electrode unclamp after the card incident is taken off in completion.
Therefore, although electrostatic charge is fully discharged before the special time end cycle, the whole time cycle is still carried out the card incident of taking off.Therefore, remainingly take off the card time cycle and represent time that can be used to improve output of being wasted.Simultaneously, the existence of plasma in process chamber also possibly facilitated chamber component degeneration too early and/or cause the etching of not expecting to substrate in the extra time.
On the other hand, even electrostatic charge does not remove from substrate fully, but substrate upwards rises when the special time end cycle.Therefore,, electrostatic charge rises the damage that substrate can cause substrate when not discharging with meeting the requirements.
In view of the foregoing, need improved technology to implement to take off the needed duration of card step to detect when to take off the success of card incident and minimize.
Summary of the invention
The method of the Best Times that in one embodiment, the present invention relates to confirm in the process chamber of plasma process system substrate is shifted out from bottom electrode machinery.This method comprises uses a series of electrical characteristics of a series of transducers with monitoring of plasma, wherein this plasma during taking off the card incident, be formed on substrate above.This method also comprises the deal with data about these a series of electrical characteristics is sent to data acquisition equipment.This method further comprises contrast processing data and a series of threshold value.This method also comprises, if this deal with data is crossed (traverse) threshold value,, just substrate shifted out from bottom electrode since release substrate (substrate-released) incident takes place so.
The foregoing invention content only relates in the execution mode that the present invention discloses, and is not intended to limit the scope of stating in the claim of the present invention of the present invention.Of the present invention these will combine accompanying drawing to go through in the embodiment with other characteristics below.
Description of drawings
The mode that the present invention combines accompanying drawing to pass through example do not explain through the mode of restriction and explains that identical reference number is represented similar element in the accompanying drawing of enclosing, wherein:
Shown in Figure 1 in one embodiment of the present invention, have the simple block diagram of the double frequency capacitive coupled plasma treatment system of two power supplys.
Shown in Figure 2 in one embodiment of the present invention, plasma impedance (unit interval internal impedance value) is the zoomed-in view of variation diagram in time.
Shown in Figure 3 in one embodiment of the present invention, at the figure that descends the FFT (spectrogram) of voltage signal than high sampling rate (about 10 KHzs).
Shown in Figure 4 in one embodiment of the present invention, the time dependent figure of a plurality of signals of telecommunication.
Shown in Figure 5 in one embodiment of the present invention, the simple flow chart of the method that detects the Best Times that substrate and bottom electrode safety are separated is described.
Shown in Figure 6 in one embodiment of the present invention, the simple flow chart of the theoretical method that detects the release substrate incident is described.
Embodiment
The present invention will be described in detail with reference to more graphic execution modes in the annexed drawings.In the following description, stated that many details understand the present invention so that provide completely.Conspicuous, however for a person skilled in the art, the present invention can carry out under some or all the prerequisite of these details not having.In other cases, do not describe known treatment step and/or structure in detail to avoid unnecessarily fuzzy the present invention.
Hereinafter has been described various execution modes, comprises method and technology.Should be appreciated that the present invention also can be contained comprises that storage is used for the goods of computer-readable medium of the computer-readable instruction of embodiment of the present invention technology implementation mode.This computer-readable medium can comprise be used for storage computation machine readable code such as semi-conductive, magnetic, optomagnetic, optics or other forms of computer-readable medium.Further, the present invention also can be contained the device of carrying out embodiment of the present invention.This device can comprise special-purpose and/or programmable circuit to implement and the embodiment of the present invention related task.The example of this device comprises all-purpose computer and/or through the dedicated computing equipment of suitably programming and the combination that can comprise computer/computing equipment of being applicable to the various tasks of embodiment of the present invention and special-purpose/programmable circuit.
As stated, the card incident of taking off based on the special time cycle possibly always not provide required result.In some cases, electrostatic charge possibly fully discharged before this special time end cycle; Therefore, wasted remaining taking off the card time, because in this time durations, do not carry out useful etching on the substrate.Further, this extra plasma life period promotes the too early degeneration of chamber component usually.In other cases, even after whole special time period expires, also not fully discharge of electrostatic charge.Therefore, the part adhesion possibly take place causes attempting substrate is caused substrate damage when bottom electrode shifts out when lifter pin.
Replacement relies on the special time cycle to confirm when substrate shifts out from process chamber, and existing technical method comprises pressure and/or the amount of helium of monitoring helium.In an example, when keeping the pressure level of being scheduled to, think that substrate suitably discharges.In another example, if apply higher amount of helium, think that so substrate is released to keep identical pressure.
Yet,, be not enough to accurately to confirm the Best Times that substrate is shifted out from bottom electrode based on this method for supervising of mechanical values (like the helium flow amount) because helium flow amount or induction (induced) pressure can not accurately characterize the true electrostatic charge between substrate and the bottom electrode.In an example, although pressure and/or flow represent to arrive threshold value (designated value that substrate safety shifts out from bottom electrode), responding to pressure and/or flow maybe be inconsistent on the whole base plate surface.Therefore, part still can take place adhere to, and then attempt substrate is caused when upwards promotion makes substrate leave bottom electrode the damage of substrate when lifter pin.
In another example, possibly need the time cycle to let induction pressure and/or flow reach predetermined threshold.Yet the electrostatic charge that between substrate and bottom electrode, exists possibly reach the fully discharge before of this predetermined threshold at this flow and/or pressure.Therefore, may because being wasted in, the quality time wait for this predetermined threshold of arrival by the negative effect output.Therefore, helium flow amount and/or induction pressure possibly be not enough to confirm the Best Times of substrate from the bottom electrode safe release.
The end point determination scheme of the innovation of the Best Times of confirming substrate is mechanically shifted out from bottom electrode is provided according to the embodiment of the present invention.Execution mode of the present invention comprises when monitoring separates with bottom electrode with definite substrate based on the electrical characteristic of the plasma of substrate vibration safely.
Among this paper, use plasma impedance that various enforcements have been discussed as an example.Yet the present invention is not limited to plasma impedance and can be included in and takes off the various electrical parameters that exist during the card incident.On the contrary, this discussion be as an example and the present invention be not limited to the example that provided.
In one aspect of the invention, the inventor recognizes when electrostatic charge removes the substrate disturbance possibly take place from process chamber.In other words, when from the bottom electrode release substrate, substrate demonstrates physical perturbation, and it causes vibration in taking off the card plasma.When inert gas (for example helium) promotion substrate leaves bottom electrode, possibly there is this physical perturbation.The Another reason of physical perturbation is because the electrostatic charge discharge causes move (shifting) of substrate.In view of the above, the inventor recognizes through the electrical characteristic of measuring plasma (plasma impedance for example, power (generator power); Electric current, DC bias voltage, and similar characteristics) and with this electrical characteristic (plasma impedance for example; Power, electric current, DC bias voltage; And similar characteristics) with a series of threshold ratios, can determine when that electrostatic charge fully discharges and can substrate be risen from bottom electrode.
In one embodiment of the present invention, can confirm a series of threshold values in theory.In order to confirm these a series of threshold values, can make up the 3-D model of board structure.The physical features (thickness, size, material composition etc.) of considering this substrate is known factor, can make up the frequency of oscillation of substrate.(MA) and so on analysis software and perfectly tone (perfect tone) can generate the frequency of oscillation figure that characterizes whole base plate for MathWorks, Inc.of Natick such as MATLAB through the 3-D model of this substrate is used.This frequency of oscillation figure can provide a series of threshold values that can during processing substrate, implement contrast.
In another embodiment of the present invention, can confirm a series of threshold values by rule of thumb.In order to confirm a series of threshold values, can during taking off the card incident, handle test base.Process engineers can be through the physical perturbation of a series of inspection hole visual observation substrates.
Simultaneously, monitoring equipment is caught the deal with data about electrical parameter.Rule of thumb, when each vibration takes place, the electrical characteristic of the related plasma variations of inventor.Therefore, the measured value of this electrical characteristic of time that can be through being extracted in each physical perturbation (for example plasma impedance, source power, electric current, DC bias voltage, and similar characteristics) is to confirm a series of threshold values.In an example, can detect plasma impedance, the figure that makes up plasma impedance value and substrate physical perturbation time coupling is as a series of threshold values.
Because can use the wideband analysis to generate a series of threshold values of this substrate zones of different of explanation to compound disturbance in the zones of different of different time release substrate.In one embodiment, take off the card plasma, so can use the electric characteristic storehouse as potential serial threshold value because can use more than one electrical parameter to characterize this.In an example, except plasma impedance, electric characteristic can also be based on the DC bias voltage, plasma voltage, electric current and similar characteristics thereof.Survey in order to minimize mistake at production period, can compare an above electric characteristic.
On basis, can understand characteristic of the present invention and advantage better with reference to following accompanying drawing and discussion.
Shown in Figure 1 in one embodiment of the present invention, have the simple functional block diagram of the double frequency capacitive coupled plasma treatment system of two power supplys.Treatment system 102 comprises two power supplys 104 and 106, and it is configured to power is provided for capacitive couplings process chamber 108 through matching network 110.Although illustrate double frequency capacitive coupled plasma treatment system, the present invention is not limited to such process chamber.On the contrary, the inventive method of this paper discussion can be used any plasma process system.
Capacitive couplings process chamber 108 can comprise bottom electrode 120 (like electrostatic chuck).During processing substrate, substrate 122 is clamped on the bottom electrode 120 usually.Can use static to clamp and implement to clamp, it comprises that the generation electrostatic charge is to be attracted to substrate 122 on the bottom electrode 120 (like electrostatic chuck).
Consider following situation, for example accomplished processing substrate and implementation and taken off the card incident to remove the electrostatic force between substrate 122 and the bottom electrode 120.In most of the cases, through generate plasma with in substrate 122 on electrostatic charge implement the electrostatic charge discharge on the substrate 122.
Different with prior art, take off the card incident and can not carry out the predetermined special time cycle.On the contrary, carry out and to take off a series of electrical characteristics of card incident in process chamber (for example plasma impedance, source power, electric current, DC bias voltage, and similar characteristics) and reach a series of threshold values.In one embodiment, implement relatively, be about to the deal with data and the Best Times of a series of electrical characteristic comparison of one or more electrical parameters to confirm substrate 122 is shifted out from bottom electrode 120 through algorithm.
In order there to be enough data to be used to analyze this plasma, can use transducer to collect deal with data about each substrate.In an example, but working voltage current sensor 112 takes off the relevant deal with data of card incident (like the DC bias voltage, plasma impedance, electric current, plasma voltage, and similar characteristics) to catch with this.This deal with data can convert digital form into from analog form through receiver 114.In case changed this data, can this numerical data be delivered to data acquisition equipment 116 and analyze.In one embodiment, data acquisition equipment 116 is configurable for not only receiving digital data but also enforcement contrast algorithm to confirm optimal release time.Can analyze the data of this collection and substrate risen and from process chamber, shifts out from electrostatic chuck so that determine when.
In one embodiment, in case confirmed optimal release time, will give process module controller 118 transmission information.After the information of receiving; The pneumatic lifting assembly of process module controller 118 instructions rises and is arranged on the lifter pin in the bottom electrode 120; So that substrate 122 is moved up and then substrate 122 and bottom electrode was left in 120 minutes, thereby allow mechanical arm that substrate 122 is shifted out plasma processing chamber.This takes off the relevant actual electrical mathematic(al) parameter of card plasma through monitoring and driving, can confirm the Best Times of release substrate 122 and can substrate 122 be risen from bottom electrode 120 and damaged substrate 122 not.
As stated, the discharge of the electrostatic charge between substrate 122 and the bottom electrode 120 is through the physical perturbation reflection of substrate 122.Each physical perturbation causes the vibration of taking off in the card plasma.The predetermined oscillation frequency of frequency of oscillation through substrate 122 relatively and the Best Times of being set up that substrate is risen from bottom electrode safely with expression can determine when that the electrostatic charge that has removed q.s is so that rise substrate 122 safely from bottom electrode 120.
The vibration of therefore, taking off in the card plasma influences the plasma electricity characteristic (for example, plasma impedance, source power, electric current, DC bias voltage, and similar characteristics) by sensor.Because vibration influences the electrical characteristic that this takes off the card plasma, the part of the terminal detecting scheme that this electrical characteristic also can involved conduct be used for substrate and bottom electrode are separated.
As stated, the physical perturbation that substrate shows during taking off the card incident can visually be monitored in test environment.When substrate shows physical perturbation, can in the electrical parameter of plasma, see corresponding disturbance.Shown in Figure 2 in one embodiment of the present invention, plasma impedance (unit interval internal impedance value) is the zoomed-in view of variation diagram in time.In Fig. 2, this plasma impedance signal has shown instant (intime) the corresponding plasma impedance signal disturbance of time that in plasma, causes vibration with the physical perturbation of test base.Visible at 202 places, when substrate moves, impedance signal generation great variety.In this example, although this figure is low sampling rate (about 175 hertz), in 74.8 seconds to 75 seconds time cycle, taken place impedance from 7 ohm to great variety less than 5.4 ohm.
Shown in Figure 3 in one embodiment of the present invention, the FFT of 27 megahertz voltage signals (fast Fourier transform).This figure is presented under the sample rate (about 10 KHzs) that is higher than Fig. 2, and is to be illustrated in to close the wideband combination frequency that the clamp voltage metacoxal plate moves at first.In an example, each disturbance in the voltage signal (point 302,304,306,308 etc.) is corresponding to closing the vibration in the plasma when moving of clamp voltage metacoxal plate at first.
As stated, the vibration that during taking off the card incident, gets in the plasma possibly influence the more than one signal of telecommunication.Shown in Figure 4 in one embodiment of the present invention, the time dependent figure of a plurality of signals of telecommunication.At 402 places (near 56 seconds), each signal of telecommunication demonstrates disturbance.Therefore, change the vibration in the reflection plasma through the harmonic wave in each signal of telecommunication.Although each signal of telecommunication shows disturbance, the amplitude of each disturbance changes.In this example, the amplitude of 27 megahertz plasma impedances (line 404) is obviously greater than the amplitude of other signals of telecommunication.In one embodiment, can confirm Best Times that substrate and bottom electrode are separated based on the signal of telecommunication with maximum perturbation.
In one embodiment, the end point determination scheme of this innovation also can minimize because partly adhere to the damaged possibility of substrate that causes through eliminating the mistake survey basically.In an example, near 50 seconds, some signals of telecommunication demonstrate disturbance.Yet,, be not that the All Ranges of substrate is all discharged fully at that time.Therefore, in one embodiment, the contrast algorithm can be based on the more than one signal of telecommunication.
From top description, can know, detect the configurable performance of contrast algorithm of release event with the explanation different electrical signals.In an example, for by the obvious signal of telecommunication of influence of the vibration in the plasma, this contrast algorithm can confirm if the disturbance in the signal of telecommunication reaches threshold value, and the release substrate incident has taken place and this substrate can shift out safely so.Yet for the electrical signal that does not show big variation owing to the oscillator signal in the entering plasma, this contrast algorithm also needs the extra signal of telecommunication to confirm that at this contrast algorithm disturbance is as showing similar performance before the release event.
Shown in Figure 5 in one embodiment of the present invention, the simple flow chart of the method that is used to detect the Best Times that substrate and bottom electrode are separated is described.
At first step 502, substrate is placed on the bottom electrode.In an example, substrate 122 is positioned at the top of bottom electrode 120 (like electrostatic chuck).In order to make substrate 122 remain on correct position, use clamp voltage between substrate 122 and bottom electrode 120, to generate electrostatic charge.
In next step 504, carry out processing substrate.In an example, treatment substrate 122 in process chamber 102.During processing substrate, can use inert gas (like helium) with the cooling base back side.
In next step 506, the card incident of taking off is accomplished and carried out to processing substrate.After processing substrate is accomplished, from the power of power supply 104 and 106 from the horizontal oblique deascension of main etching to the level that is enough to keep the low-power plasma.This plasma by force in be enough to substrate 122 on electrostatic charge but weak to not implementing etching.Equally, process chamber 108 is vacated through extracting helium (chip back surface inert gas) pressure out.Normally, the about 20-30 holder of this helium in the processing (chip back surface inert gas) pressure.Yet the amount of this helium (chip back surface inert gas) pressure is the low pressure of about 2-3 holder after in the chamber, handling.In addition, keep the clamp voltage of the electrostatic force between substrate 122 and the bottom electrode 120 to close.
During taking off the card incident, movable substrate 122.In an example, after closing clamp voltage, 122 scalable times its natures of substrate.In another example, back side inert gas flow possibly cause the rising of substrate, because this clamp voltage no longer exists to keep this electrostatic force (substrate 122 is clamped to the power on the bottom electrode 120).Substrate moves the vibration that possibly cause in the plasma, and this vibration can be reflected as the variation of parameter electrical characteristic.
In next step 508, use the electrical parameter (signal) of transducer with monitoring of plasma.In an example, can monitor like plasma impedance, the DC bias voltage, electric current, source power, and similar electrical parameter are because these electrical parameters are influenced when electrostatic charge is discharged.In an example, but working voltage and current sensor are to catch deal with data.Can this deal with data (like plasma impedance) be sent to data acquisition equipment analysis.With this deal with data and threshold.If this deal with data is crossed threshold value, think that so this electrostatic charge fully charges.Yet if do not arrive threshold value, the release substrate incident does not take place and continues this and take off the card incident so.
As what this paper discussed, term cross can comprise go beyond the scope, be lower than scope, in scope etc.The meaning that term is crossed can be depending on the requirement of threshold value/threshold range.In an example, for example,,, think that so this deal with data crosses this threshold value/threshold range if this impedance of plasma value reaches or exceeds this threshold value/threshold range then if scheme needs plasma impedance to be at least certain value.In another example, for example,,, think that so this deal with data crosses this threshold value/threshold range if this impedance of plasma value drops on this below threshold value/threshold range so if scheme requires plasma impedance under certain value.
In one embodiment, only monitor an electrical parameter.If only monitor an electrical parameter, confirm that so rule of thumb the electrical parameter of this monitoring shows maximum variation when substrate shows physical perturbation.
In another embodiment, can monitor a plurality of signals of telecommunication.Through monitoring more than one signal, can obviously eliminate mistake and survey.In an example, can be arranged on think substrate 122 be enough to discharge before mixed signal must be through the such condition of a series of threshold values to guarantee the safe release from the bottom electrode 120.
In next step 510, lifter pin rises substrate from bottom electrode.In an example; When reaching release substrate condition (reaching a series of threshold values) like the one or more signal of telecommunication; Information sends to process module controller 118; Rise lifter pin so that substrate 122 and bottom electrode are separated with instruction Pneumatic elevation assembly, thereby substrate 122 can be shifted out from process chamber 102 through mechanical arm.
Shown in Figure 6 in one embodiment of the present invention, the simple flow chart of the theoretical method that detects the release substrate incident is described.
At first step 602, make up substrate module.In one embodiment, this module is the 3-D module of catching the physical characteristic (like thickness, size, and material composition) of this substrate, and this module comprises the difference that is present between this substrate zones of different.
In next step 604, when substrate because release substrate incident and during by physical perturbation, confirm the physical oscillation frequency module figure of this substrate module.In one embodiment, can be to this module application such as MATLAB (MathWorks, Inc.of Natick, MA) and so on routine analyzer and combine perfect tone to draw the frequency of oscillation figure of release event.
In next step 606, algorithm can use in the harmonics of physical oscillation frequency diagram one as the signal of telecommunication with produce in the card incident of taking off during the actual oscillation frequency of substrate compare.
In next step 608, lifter pin rises substrate from bottom electrode.In an example, the one or more signal of telecommunication satisfies electrology characteristic, confirms the release substrate incident and information is sent to process module controller 118 to rise lifter pin so that substrate 122 is shifted out with instruction Pneumatic elevation assembly from bottom electrode 120.
Can know that from Fig. 5 and Fig. 6 the end point determination scheme of innovation is suitably taken off card from bottom electrode by substrate with mode safely and effectively.This method has been eliminated the possibility that mistake is surveyed basically, thereby has eliminated the possibility of the part adhesion that can cause substrate damage.Because in case confirm the Best Times that shifts out, substrate shifts out from process chamber, so this method also provides high process income and system throughput.In other words, in case the proof that the one or more signal of telecommunication provides electrostatic charge fully to discharge, substrate separates with bottom electrode.Different with prior art, the time can not wasted because the special time latent period does not disappear.
Can know from one or more execution mode of the present invention, the end point determination scheme of the innovation during taking off card is provided.Follow the end point determination scheme of this innovation, provide with safety and timely mode accurately confirm the method for release substrate incident.Therefore, to clean the needed time also less owing to part adheres to the less and chamber of substrate waste, thereby reduced and have cost.Equally, because when correctly confirming the release substrate incident, just substrate is shifted out from process chamber, so can obtain higher output.
Though the present invention preferred embodiment describes through several, there are the replacement, conversion and the equivalent that fall into the scope of the invention.Although various examples provided herein, these examples are intended to explanation and and unrestricted the present invention.
Equally, title provided herein and summary of the invention are for convenience's sake, can not be used for explaining the scope of claim of the present invention.Further, the summary of writing is the height abridged and is to provide for convenience's sake, therefore shall not be applied to and explains or limit the whole invention of being explained in the claim.If use a technical term in the text " series ", this term has its general mathematics implication, comprises zero, one, or greater than one.It should be noted that the interchangeable mode of a lot of realizations method and apparatus of the present invention.The claims of therefore, enclosing should be interpreted as and comprise all these replacements, conversion and the equivalent that falls in true spirit of the present invention and the scope.
Claims (20)
1. the method for the Best Times of confirming in the process chamber of plasma process system substrate is shifted out from bottom electrode machinery, it comprises:
Use a series of electrical characteristics of a series of transducers with monitoring of plasma, wherein said plasma during taking off the card incident, be formed on said substrate above;
To send to data acquisition equipment about the deal with data of said a series of electrical characteristics;
With said deal with data and a series of threshold;
If said deal with data is crossed said threshold value, because the release substrate incident takes place, just said substrate is shifted out from said bottom electrode so.
2. method according to claim 1 if wherein said deal with data is not crossed said a series of threshold value, thinks that so said release substrate incident does not take place and said substrate does not shift out from said bottom electrode.
3. method according to claim 2, wherein said a series of electrical characteristics comprise plasma impedance.
4. method according to claim 2, wherein said a series of electrical characteristics comprise Dc bias.
5. method according to claim 2, wherein said a series of electrical characteristics comprise current source power.
6. method according to claim 2, wherein said a series of electrical characteristics are single electrical parameters, confirm rule of thumb that wherein said single electrical parameter shows maximum the variation during taking off the card incident when test base demonstrates physical perturbation.
7. method according to claim 2, wherein said a series of electrical characteristics comprise more than one electrical parameter, wherein the combination of electrical parameter and a plurality of threshold ratio are to confirm said release substrate incident.
8. method according to claim 1, wherein said plasma process system are double frequency capacitive coupled plasma treatment systems.
9. confirm in the process chamber of plasma process system, to take off during the card incident method of the Best Times that substrate is shifted out from bottom electrode machinery, it comprises:
At the said frequency of oscillation figure that generates a series of electrical characteristics of said substrate during taking off the card incident;
Said frequency of oscillation figure and a series of electrical characteristic of said substrate are compared; And
If said frequency of oscillation figure crosses said a series of electrical characteristic, because the release substrate incident takes place, just said substrate is shifted out from said bottom electrode so.
10. method according to claim 9 if wherein said frequency of oscillation figure does not cross said a series of electrical characteristic, thinks that so said release substrate incident does not take place and said substrate does not shift out from said bottom electrode.
11. method according to claim 10, wherein said a series of electrical characteristics comprise plasma impedance.
12. method according to claim 10, wherein said a series of electrical characteristics comprise Dc bias.
13. method according to claim 10, wherein said a series of electrical characteristics comprise current source power.
14. method according to claim 10, wherein said a series of electrical characteristics are single electrical parameters, confirm rule of thumb that wherein said single electrical parameter shows maximum the variation during taking off the card incident when test base demonstrates physical perturbation.
15. method according to claim 10, wherein said a series of electrical characteristics comprise more than one electrical parameter, and wherein the combination of electrical parameter and a plurality of threshold ratio are to confirm said release substrate incident.
16. method according to claim 9, wherein said plasma process system are double frequency capacitive coupled plasma treatment systems.
17. method according to claim 9; Wherein said a series of electrical characteristic is a series of physical oscillation frequency diagrams of substrate module, wherein generates said a series of physical oscillation frequency diagram during by physical perturbation because of the release substrate incident when said substrate module.
18. method according to claim 17 is wherein compared said frequency of oscillation figure with the harmonics of said a series of frequency of oscillation figure.
19. comprise the goods of program recorded medium with computer-readable code; The method of the Best Times that said computer-readable code is configured to confirm during taking off the card incident in the process chamber of plasma process system substrate is shifted out from bottom electrode machinery, said goods comprise:
Be used to use the code of transducer with a series of electrical characteristics of monitoring of plasma, wherein said plasma during taking off the card incident, be formed on said substrate above;
Be used for to send to about the deal with data of said a series of electrical characteristics the code of data acquisition equipment;
Be used for code with said deal with data and a series of threshold; And
Cross threshold value if be used for said deal with data, so because the code that just said substrate is shifted out from said bottom electrode takes place the release substrate incident.
20. manufacturing thing according to claim 19, wherein said a series of electrical characteristics comprise in impedance of plasma, Dc bias and the current source power.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/557,381 US20110060442A1 (en) | 2009-09-10 | 2009-09-10 | Methods and arrangement for detecting a wafer-released event within a plasma processing chamber |
| US12/557,387 | 2009-09-10 | ||
| US12/557,381 | 2009-09-10 | ||
| US12/557,387 US8797705B2 (en) | 2009-09-10 | 2009-09-10 | Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential |
| PCT/US2010/047380 WO2011031589A2 (en) | 2009-09-10 | 2010-08-31 | Methods and arrangement for detecting a wafer-released event within a plasma processing chamber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102598237A true CN102598237A (en) | 2012-07-18 |
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080039844.7A Active CN102484086B (en) | 2009-09-10 | 2010-08-31 | Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential |
| CN2010800389607A Pending CN102598237A (en) | 2009-09-10 | 2010-08-31 | Methods and arrangement for detecting a wafer-released event within a plasma processing chamber |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201080039844.7A Active CN102484086B (en) | 2009-09-10 | 2010-08-31 | Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential |
Country Status (5)
| Country | Link |
|---|---|
| JP (2) | JP5735513B2 (en) |
| KR (2) | KR20120073227A (en) |
| CN (2) | CN102484086B (en) |
| SG (3) | SG178374A1 (en) |
| WO (2) | WO2011031589A2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8520360B2 (en) * | 2011-07-19 | 2013-08-27 | Lam Research Corporation | Electrostatic chuck with wafer backside plasma assisted dechuck |
| JP6789099B2 (en) * | 2016-12-26 | 2020-11-25 | 東京エレクトロン株式会社 | Measurement method, static elimination method and plasma processing equipment |
| US10770257B2 (en) * | 2018-07-20 | 2020-09-08 | Asm Ip Holding B.V. | Substrate processing method |
| US11437262B2 (en) * | 2018-12-12 | 2022-09-06 | Applied Materials, Inc | Wafer de-chucking detection and arcing prevention |
| JP7450512B2 (en) * | 2020-10-07 | 2024-03-15 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing apparatus |
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| US20020086546A1 (en) * | 2000-12-28 | 2002-07-04 | Mitsubishi Denki Kabushiki Kaisha | Plasma processing system in which wafer is retained by electrostatic chuck, plasma processing method and method of manufacturing semiconductor device |
| US20060087793A1 (en) * | 2004-10-21 | 2006-04-27 | Taeg-Kon Kim | Methods adapted for use in semiconductor processing apparatus including electrostatic chuck |
| CN101006630A (en) * | 2004-06-30 | 2007-07-25 | 兰姆研究有限公司 | Method of determining the correct average bias compensation voltage during a plasma process |
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| US6570752B2 (en) * | 1999-12-28 | 2003-05-27 | Nikon Corporation | Wafer chucks and the like including substrate-adhesion detection and adhesion correction |
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- 2010-08-31 KR KR1020127006359A patent/KR20120073227A/en not_active Application Discontinuation
- 2010-08-31 CN CN201080039844.7A patent/CN102484086B/en active Active
- 2010-08-31 SG SG2012009650A patent/SG178374A1/en unknown
- 2010-08-31 KR KR1020127006357A patent/KR20120073226A/en not_active Application Discontinuation
- 2010-08-31 SG SG10201405047VA patent/SG10201405047VA/en unknown
- 2010-08-31 WO PCT/US2010/047380 patent/WO2011031589A2/en active Application Filing
- 2010-08-31 WO PCT/US2010/047382 patent/WO2011031590A2/en active Application Filing
- 2010-08-31 CN CN2010800389607A patent/CN102598237A/en active Pending
- 2010-08-31 JP JP2012528825A patent/JP5735513B2/en active Active
- 2010-08-31 JP JP2012528824A patent/JP2013504873A/en active Pending
- 2010-08-31 SG SG2012009627A patent/SG178372A1/en unknown
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| US20020086546A1 (en) * | 2000-12-28 | 2002-07-04 | Mitsubishi Denki Kabushiki Kaisha | Plasma processing system in which wafer is retained by electrostatic chuck, plasma processing method and method of manufacturing semiconductor device |
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| US20060087793A1 (en) * | 2004-10-21 | 2006-04-27 | Taeg-Kon Kim | Methods adapted for use in semiconductor processing apparatus including electrostatic chuck |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102484086A (en) | 2012-05-30 |
| WO2011031590A3 (en) | 2011-06-30 |
| JP2013504874A (en) | 2013-02-07 |
| WO2011031589A2 (en) | 2011-03-17 |
| KR20120073227A (en) | 2012-07-04 |
| WO2011031590A2 (en) | 2011-03-17 |
| SG178374A1 (en) | 2012-03-29 |
| WO2011031589A3 (en) | 2011-06-03 |
| SG178372A1 (en) | 2012-03-29 |
| JP5735513B2 (en) | 2015-06-17 |
| JP2013504873A (en) | 2013-02-07 |
| SG10201405047VA (en) | 2014-10-30 |
| KR20120073226A (en) | 2012-07-04 |
| CN102484086B (en) | 2014-10-15 |
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Application publication date: 20120718 |