SG10201405047VA - Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential - Google Patents

Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential

Info

Publication number
SG10201405047VA
SG10201405047VA SG10201405047VA SG10201405047VA SG10201405047VA SG 10201405047V A SG10201405047V A SG 10201405047VA SG 10201405047V A SG10201405047V A SG 10201405047VA SG 10201405047V A SG10201405047V A SG 10201405047VA SG 10201405047V A SG10201405047V A SG 10201405047VA
Authority
SG
Singapore
Prior art keywords
plasma
potential
coupling
arrangement
methods
Prior art date
Application number
SG10201405047VA
Inventor
Jr John C Valcure
Saurabh Ullal
Daniel Byun
Ed Santos
Konstantin Makhratchev
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/557,381 external-priority patent/US20110060442A1/en
Priority claimed from US12/557,387 external-priority patent/US8797705B2/en
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201405047VA publication Critical patent/SG10201405047VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
SG10201405047VA 2009-09-10 2010-08-31 Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential SG10201405047VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/557,381 US20110060442A1 (en) 2009-09-10 2009-09-10 Methods and arrangement for detecting a wafer-released event within a plasma processing chamber
US12/557,387 US8797705B2 (en) 2009-09-10 2009-09-10 Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential

Publications (1)

Publication Number Publication Date
SG10201405047VA true SG10201405047VA (en) 2014-10-30

Family

ID=43733060

Family Applications (3)

Application Number Title Priority Date Filing Date
SG2012009627A SG178372A1 (en) 2009-09-10 2010-08-31 Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential
SG2012009650A SG178374A1 (en) 2009-09-10 2010-08-31 Methods and arrangement for detecting a wafer-released event within a plasma processing chamber
SG10201405047VA SG10201405047VA (en) 2009-09-10 2010-08-31 Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential

Family Applications Before (2)

Application Number Title Priority Date Filing Date
SG2012009627A SG178372A1 (en) 2009-09-10 2010-08-31 Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential
SG2012009650A SG178374A1 (en) 2009-09-10 2010-08-31 Methods and arrangement for detecting a wafer-released event within a plasma processing chamber

Country Status (5)

Country Link
JP (2) JP5735513B2 (en)
KR (2) KR20120073226A (en)
CN (2) CN102598237A (en)
SG (3) SG178372A1 (en)
WO (2) WO2011031589A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8520360B2 (en) * 2011-07-19 2013-08-27 Lam Research Corporation Electrostatic chuck with wafer backside plasma assisted dechuck
JP6789099B2 (en) * 2016-12-26 2020-11-25 東京エレクトロン株式会社 Measurement method, static elimination method and plasma processing equipment
US10770257B2 (en) * 2018-07-20 2020-09-08 Asm Ip Holding B.V. Substrate processing method
US11437262B2 (en) 2018-12-12 2022-09-06 Applied Materials, Inc Wafer de-chucking detection and arcing prevention
JP7450512B2 (en) * 2020-10-07 2024-03-15 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5459632A (en) * 1994-03-07 1995-10-17 Applied Materials, Inc. Releasing a workpiece from an electrostatic chuck
JP3125593B2 (en) * 1994-09-09 2001-01-22 株式会社日立製作所 Electrostatic suction device and method
JPH10163306A (en) * 1996-12-04 1998-06-19 Sony Corp Method and apparatus for manufacturing semiconductor device
JPH11260897A (en) * 1998-03-12 1999-09-24 Matsushita Electric Ind Co Ltd Method and apparatus handling substrate, and vacuum chucking and inspecting method and apparatus used therefor
US7218503B2 (en) * 1998-09-30 2007-05-15 Lam Research Corporation Method of determining the correct average bias compensation voltage during a plasma process
US6965506B2 (en) * 1998-09-30 2005-11-15 Lam Research Corporation System and method for dechucking a workpiece from an electrostatic chuck
US6790375B1 (en) * 1998-09-30 2004-09-14 Lam Research Corporation Dechucking method and apparatus for workpieces in vacuum processors
US6570752B2 (en) * 1999-12-28 2003-05-27 Nikon Corporation Wafer chucks and the like including substrate-adhesion detection and adhesion correction
US6307728B1 (en) * 2000-01-21 2001-10-23 Applied Materials, Inc. Method and apparatus for dechucking a workpiece from an electrostatic chuck
JP2002203837A (en) * 2000-12-28 2002-07-19 Mitsubishi Electric Corp Plasma treatment method and apparatus, and manufacturing method of semiconductor device
JP3702220B2 (en) * 2001-11-29 2005-10-05 株式会社東芝 Plasma management method
US20030210510A1 (en) * 2002-05-07 2003-11-13 Hann Thomas C. Dynamic dechucking
JP4313656B2 (en) * 2003-11-19 2009-08-12 パナソニック株式会社 Manufacturing method of semiconductor device
US20050212450A1 (en) * 2004-03-16 2005-09-29 Scientific Systems Research Limited Method and system for detecting electrical arcing in a plasma process powered by an AC source
KR100653707B1 (en) * 2004-10-21 2006-12-04 삼성전자주식회사 Plasma processing method of plasma processing apparatus
JP4884811B2 (en) * 2006-03-20 2012-02-29 三菱重工業株式会社 Glass substrate electrostatic adsorption device and adsorption / desorption method thereof
KR101394337B1 (en) * 2006-08-30 2014-05-13 엘아이지에이디피 주식회사 Electrostratic Chuck
JP4646941B2 (en) * 2007-03-30 2011-03-09 東京エレクトロン株式会社 Substrate processing apparatus and method for stabilizing state in processing chamber

Also Published As

Publication number Publication date
SG178372A1 (en) 2012-03-29
JP2013504874A (en) 2013-02-07
KR20120073227A (en) 2012-07-04
WO2011031590A2 (en) 2011-03-17
JP5735513B2 (en) 2015-06-17
WO2011031590A3 (en) 2011-06-30
CN102598237A (en) 2012-07-18
WO2011031589A3 (en) 2011-06-03
WO2011031589A2 (en) 2011-03-17
KR20120073226A (en) 2012-07-04
CN102484086A (en) 2012-05-30
CN102484086B (en) 2014-10-15
SG178374A1 (en) 2012-03-29
JP2013504873A (en) 2013-02-07

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