WO2011031590A3 - Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential - Google Patents

Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential Download PDF

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Publication number
WO2011031590A3
WO2011031590A3 PCT/US2010/047382 US2010047382W WO2011031590A3 WO 2011031590 A3 WO2011031590 A3 WO 2011031590A3 US 2010047382 W US2010047382 W US 2010047382W WO 2011031590 A3 WO2011031590 A3 WO 2011031590A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
substrate
dechuck
lower electrode
threshold value
Prior art date
Application number
PCT/US2010/047382
Other languages
French (fr)
Other versions
WO2011031590A2 (en
Inventor
John C. Valcure Jr.
Saurabh Ullal
Daniel Byun
Ed Santos
Konstantin Makhratchev
Original Assignee
Lam Research Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/557,387 external-priority patent/US8797705B2/en
Priority claimed from US12/557,381 external-priority patent/US20110060442A1/en
Application filed by Lam Research Corporation filed Critical Lam Research Corporation
Priority to CN201080039844.7A priority Critical patent/CN102484086B/en
Priority to JP2012528825A priority patent/JP5735513B2/en
Priority to SG2012009627A priority patent/SG178372A1/en
Publication of WO2011031590A2 publication Critical patent/WO2011031590A2/en
Publication of WO2011031590A3 publication Critical patent/WO2011031590A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Abstract

A method for optimizing a dechuck sequence, which includes removing a substrate from a lower electrode. The method includes performing an initial analysis to determine if a first set of electrical characteristic data of a plasma formed during the dechuck sequence traverses a threshold values. If so, turning off the inert gas. The method also includes raising the lifter pins slightly from the lower electrode to move the substrate in an upward direction. The method further includes performing a mechanical and electrical analysis, which includes comparing a first set of mechanical data, which includes an amount of force exerted by the lifter pins, against a threshold value. The mechanical and electrical analysis also includes comparing a second set of electrical characteristic data against a threshold value. If both traverse the respective threshold value, removes the substrate from the lower electrode since a substrate-released event has occurred.
PCT/US2010/047382 2009-09-10 2010-08-31 Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential WO2011031590A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201080039844.7A CN102484086B (en) 2009-09-10 2010-08-31 Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential
JP2012528825A JP5735513B2 (en) 2009-09-10 2010-08-31 Method and apparatus for plasma dechuck optimization based on coupling of plasma signal to substrate position and substrate potential
SG2012009627A SG178372A1 (en) 2009-09-10 2010-08-31 Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/557,387 2009-09-10
US12/557,387 US8797705B2 (en) 2009-09-10 2009-09-10 Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential
US12/557,381 2009-09-10
US12/557,381 US20110060442A1 (en) 2009-09-10 2009-09-10 Methods and arrangement for detecting a wafer-released event within a plasma processing chamber

Publications (2)

Publication Number Publication Date
WO2011031590A2 WO2011031590A2 (en) 2011-03-17
WO2011031590A3 true WO2011031590A3 (en) 2011-06-30

Family

ID=43733060

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/US2010/047382 WO2011031590A2 (en) 2009-09-10 2010-08-31 Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential
PCT/US2010/047380 WO2011031589A2 (en) 2009-09-10 2010-08-31 Methods and arrangement for detecting a wafer-released event within a plasma processing chamber

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/US2010/047380 WO2011031589A2 (en) 2009-09-10 2010-08-31 Methods and arrangement for detecting a wafer-released event within a plasma processing chamber

Country Status (5)

Country Link
JP (2) JP5735513B2 (en)
KR (2) KR20120073226A (en)
CN (2) CN102484086B (en)
SG (3) SG10201405047VA (en)
WO (2) WO2011031590A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8520360B2 (en) * 2011-07-19 2013-08-27 Lam Research Corporation Electrostatic chuck with wafer backside plasma assisted dechuck
JP6789099B2 (en) * 2016-12-26 2020-11-25 東京エレクトロン株式会社 Measurement method, static elimination method and plasma processing equipment
US10770257B2 (en) 2018-07-20 2020-09-08 Asm Ip Holding B.V. Substrate processing method
US11437262B2 (en) * 2018-12-12 2022-09-06 Applied Materials, Inc Wafer de-chucking detection and arcing prevention

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5459632A (en) * 1994-03-07 1995-10-17 Applied Materials, Inc. Releasing a workpiece from an electrostatic chuck
US6307728B1 (en) * 2000-01-21 2001-10-23 Applied Materials, Inc. Method and apparatus for dechucking a workpiece from an electrostatic chuck
US20030210510A1 (en) * 2002-05-07 2003-11-13 Hann Thomas C. Dynamic dechucking
US20060087793A1 (en) * 2004-10-21 2006-04-27 Taeg-Kon Kim Methods adapted for use in semiconductor processing apparatus including electrostatic chuck
US7196896B2 (en) * 1998-09-30 2007-03-27 Lam Research Corporation Dechucking method and apparatus for workpieces in vacuum processors

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3125593B2 (en) * 1994-09-09 2001-01-22 株式会社日立製作所 Electrostatic suction device and method
JPH10163306A (en) * 1996-12-04 1998-06-19 Sony Corp Method and apparatus for manufacturing semiconductor device
JPH11260897A (en) * 1998-03-12 1999-09-24 Matsushita Electric Ind Co Ltd Method and apparatus handling substrate, and vacuum chucking and inspecting method and apparatus used therefor
US6965506B2 (en) * 1998-09-30 2005-11-15 Lam Research Corporation System and method for dechucking a workpiece from an electrostatic chuck
US7218503B2 (en) * 1998-09-30 2007-05-15 Lam Research Corporation Method of determining the correct average bias compensation voltage during a plasma process
US6570752B2 (en) * 1999-12-28 2003-05-27 Nikon Corporation Wafer chucks and the like including substrate-adhesion detection and adhesion correction
JP2002203837A (en) * 2000-12-28 2002-07-19 Mitsubishi Electric Corp Plasma treatment method and apparatus, and manufacturing method of semiconductor device
JP3702220B2 (en) * 2001-11-29 2005-10-05 株式会社東芝 Plasma management method
JP4313656B2 (en) * 2003-11-19 2009-08-12 パナソニック株式会社 Manufacturing method of semiconductor device
US20050212450A1 (en) * 2004-03-16 2005-09-29 Scientific Systems Research Limited Method and system for detecting electrical arcing in a plasma process powered by an AC source
JP4884811B2 (en) * 2006-03-20 2012-02-29 三菱重工業株式会社 Glass substrate electrostatic adsorption device and adsorption / desorption method thereof
KR101394337B1 (en) * 2006-08-30 2014-05-13 엘아이지에이디피 주식회사 Electrostratic Chuck
JP4646941B2 (en) * 2007-03-30 2011-03-09 東京エレクトロン株式会社 Substrate processing apparatus and method for stabilizing state in processing chamber

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5459632A (en) * 1994-03-07 1995-10-17 Applied Materials, Inc. Releasing a workpiece from an electrostatic chuck
US7196896B2 (en) * 1998-09-30 2007-03-27 Lam Research Corporation Dechucking method and apparatus for workpieces in vacuum processors
US6307728B1 (en) * 2000-01-21 2001-10-23 Applied Materials, Inc. Method and apparatus for dechucking a workpiece from an electrostatic chuck
US20030210510A1 (en) * 2002-05-07 2003-11-13 Hann Thomas C. Dynamic dechucking
US20060087793A1 (en) * 2004-10-21 2006-04-27 Taeg-Kon Kim Methods adapted for use in semiconductor processing apparatus including electrostatic chuck

Also Published As

Publication number Publication date
SG10201405047VA (en) 2014-10-30
WO2011031589A3 (en) 2011-06-03
WO2011031590A2 (en) 2011-03-17
KR20120073226A (en) 2012-07-04
JP2013504873A (en) 2013-02-07
WO2011031589A2 (en) 2011-03-17
CN102484086B (en) 2014-10-15
KR20120073227A (en) 2012-07-04
SG178372A1 (en) 2012-03-29
JP5735513B2 (en) 2015-06-17
CN102598237A (en) 2012-07-18
JP2013504874A (en) 2013-02-07
SG178374A1 (en) 2012-03-29
CN102484086A (en) 2012-05-30

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