CN102593286A - Method for manufacturing high-power light-emitting diode (LED) - Google Patents
Method for manufacturing high-power light-emitting diode (LED) Download PDFInfo
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- CN102593286A CN102593286A CN2012100664821A CN201210066482A CN102593286A CN 102593286 A CN102593286 A CN 102593286A CN 2012100664821 A CN2012100664821 A CN 2012100664821A CN 201210066482 A CN201210066482 A CN 201210066482A CN 102593286 A CN102593286 A CN 102593286A
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Abstract
The invention relates to a method for manufacturing a high-power light-emitting diode (LED) and belongs to the technical field of semiconductor chip manufacturing. The method for manufacturing the LED comprises the following steps of: forming a pattern structure with a plane part on a substrate or on a defect barrier layer formed on the substrate, preparing an epitaxial growth layer and electrodes, grinding, coating a metal layer and a reflective layer on the back surface of the substrate, scribing and splitting. By the method for manufacturing the LED, an invisible laser cutting technology is adopted, laser is focused inside a wafer to form a deteriorative layer, and a thermal effect generated by coaction of the laser and the substrate can be effectively reduced; and therefore, the damage to an active layer is reduced, chipping is reduced, the cutting thickness is reduced, the number of chips is increased, and the consistency of the chips is improved.
Description
Technical field
The present invention relates to the semiconductor chip fabrication technical field, relate in particular to a kind of preparation method of great power LED.
Background technology
In the manufacturing process of led chip, cutting is wherein crucial together technology, and cutting is that wafer is divided into individual chips one by one, and the cutting technique of high-power LED chip has two kinds at present: the stealthy cutting of cutting of nanosecond laser surface and picosecond laser.
Shown in accompanying drawing 4, existing main flow dicing method is the laser surface cutting, utilizes the high-energy-density of laser beam to focus on crystal column surface, goes out cut in the crystal column surface calcination, the purpose that reaches cutting and separate wafer.Yet in laser cutting process; Because of the localized hyperthermia that high-energy-density produces of laser beam, on Cutting Road, can produce many accessory substances that contain coke, this accessory substance can absorb the light that active illuminating layer sends; Cause LED brightness to reduce by 20%; If these accessory substances are bonded at the PN junction place of LED, will cause electric leakage, even have punch-through.Taiwan patent TW270223B " manufacturing approach of the light-emitting component of high-luminous-efficiency " discloses a kind of high temperature wet etching method; Remove these accessory substances; But also there are some problems in himself; It is tediously long that chip technology becomes, and strong acid solution can destroy the active area of chip, and the fragmentation that is caused under the hot conditions.
In recent years, short-pulse laser develops rapidly, and the stealthy cutting of picosecond laser has ultrashort pulse, and laser focusing is inner in wafer, forms metamorphic layer, the thermal effect that can effectively reduce Reciprocity of Laser & Materials and produced.The stealthy cutting technique of laser will become the mainstream technology of wafer cutting of future generation.Yet because the particularity of high-power LED chip; Its front is patterned substrate or defective barrier layer, and laser energy is had scattering or reflex, and the back side is metal level and increases anti-layer; Laser energy is had absorption, make stealthy cutting technique on high-power LED chip, to use.
Summary of the invention
Technical problem to be solved by this invention provides and a kind ofly prepares the method for high-power LED chip through the stealthy cutting method of laser, to reduce the injury to active layer, reduces fragmentation, reduces cutting thickness, increases the chip number.
First kind of technical scheme that the present invention solves the problems of the technologies described above is following: a kind of preparation method of great power LED comprises: patterned substrate preparation, the epitaxially grown layer preparation, electrode preparation, abrasive disc, back side metal cladding with increase anti-layer, scribing, sliver and expansion.
Key of the present invention is on substrate, to form figure.Wherein, the method that on substrate, forms figure has multiple, like nano impression, electron beam lithography, ultraviolet photolithographic etc., is that example is described in detail below with the ultraviolet photolithographic, and concrete steps are following:
Wherein, the substrate after graphical is divided into 2 zones, and a zone is a plane domain; Be the Cutting Road zone, do not have figure, another is the on-plane surface zone; Be the zone beyond the Cutting Road, exist periodically or the figure of no periodic array that the indication figure can be prism, circular cone, cylinder or round platform here; The purpose of making this structure be for be suitable for the back stealthy cutting technique because figure can increase the light effect that of active layer, but figure has scattering process for laser; So remove the figure of drawing the place, road, keep the figure of drawing beyond the road.
Wherein, growing epitaxial is meant and on substrate, generates epitaxial loayer that epitaxial loayer comprises: resilient coating, n type semiconductor layer, active layer, p type semiconductor layer; Preparation N type electrode on the n type semiconductor layer of epitaxial loayer, preparation P type electrode on p type semiconductor layer; Then through grinding with substrate thinning; Scribing is with the stealthy cutting of picosecond laser, the cutting crystal wafer at the Cutting Road place; Sliver is meant through the sliver machine and along the road of drawing that has cut wafer is separated.Expansion is meant draws back certain distance with the individual chips behind sliver.
In addition, the great power LED of indication of the present invention refers to the LED of power greater than 1w.
The invention has the beneficial effects as follows: adopt the stealthy cutting technique of laser, laser focusing is inner in wafer, form metamorphic layer; Can effectively reduce the thermal effect that Reciprocity of Laser & Materials produces; Thereby reduce injury, reduce fragmentation, reduce cutting thickness active layer; Increase the chip number, improve the consistency of chip.
On the basis of technique scheme, the present invention can also do following improvement.
Further, substrate is wherein a kind of of sapphire, SiC or Si in the said step a).
Further, in the said step a), during etched substrate, do not form figure, be planar structure in the Cutting Road zone; Other zones form figure, are nonplanar structure.
Wherein, planar structure is meant that this zone is smooth, do not have raised or sunken part, and nonplanar structure is meant this zone out-of-flatness, has raised or sunken part.
The beneficial effect that adopts above-mentioned further scheme is the stealthy cutting technique that this structure is applicable to the back.
Further, the nonplanar structure of graph substrate is prism, circular cone, cylinder or the round platform of periodicity or no periodic array.
Wherein, periodically be meant with some be a unit by certain regularly arranged figure, wherein figure can be prism, circular cone, cylinder or round platform, this unit carries out repeated arrangement by certain rule again.For example, cylinder figure on four summits of square will be positioned at, about again this element being carried out and upper and lower translation, the figure of periodic arrangement can be obtained as a unit.Otherwise, be no periodic array.
Further, in the said step f), backside reflection layer is the alternately stack of high-index material and low-index material, and metal layer on back is the combination of any one or a few metal among Ag, Al, Cr, Pt, the Au.
Wherein, substrate back refers to that one side through the wafer lapping machine attenuate; High index of refraction refers to refractive index greater than 2.0, and low-refraction refers to that refractive index is between 1.5 to 1.7.
The beneficial effect that adopts above-mentioned further scheme is to increase reflection of light, lets more light come out from the front
Further, in the said step f), carry out the stealth cutting in substrate face, the concrete mode of stealthy cutting: laser sees through epitaxial loayer and focuses on substrate interior, carries out the stealth cutting, and wafer is divided into individual chips one by one.
Wherein, substrate face refers to form that one side of figure.
The beneficial effect that adopts above-mentioned further scheme is the injury that can reduce active layer, reduces fragmentation, reduces cutting thickness, increases the chip number.
Second kind of technical scheme that the present invention solves the problems of the technologies described above is following: a kind of preparation method of great power LED comprises: on substrate, form the defective barrier layer, remove the defective barrier layer and draw the figure at place, growing epitaxial on the defective barrier layer; The preparation epitaxially grown layer; The preparation electrode, abrasive disc, back side metal cladding with increase anti-layer; Scribing, sliver and expansion.
The difference of present technique scheme and scheme 1 is; On substrate, form the defective barrier layer, the purpose that forms the defective barrier layer is to reduce defect of epitaxial growth density, removes the figure of drawing the place, road on the defective barrier layer that is plated on the substrate then; Become planar structure; The regional graphics of drawing beyond the road keep, and become nonplanar structure, to be applicable to stealthy cutting technique.
Description of drawings
The patterned substrate end view of Fig. 1 for obtaining after the photoetching of the present invention;
The patterned substrate vertical view of Fig. 2 for obtaining after the photoetching of the present invention;
The graphical defective barrier layer end view of Fig. 3 for obtaining after the photoetching of the present invention
Fig. 4 is a cutting process sketch map of the present invention;
Fig. 5 utilizes the sketch map of surface cutting for prior art.
In the accompanying drawing, the list of parts of each label representative is following:
1, chip, 2, Cutting Road, 3, epitaxial loayer, 4, substrate, 5, figure, 6, increase anti-layer, 7, metal level, 8, the defective barrier layer.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and characteristic are described, institute gives an actual example and only is used to explain the present invention, is not to be used to limit scope of the present invention.
The method for preparing great power LED is following:
A) on substrate, form figure through lithographic technique;
Wherein, on substrate 4, form figure, present embodiment is that example is described in detail with the photoetching technique, and concrete operations are following:
Be illustrated in figure 1 as the no figure in Cutting Road 2 zones that obtains after the photoetching, there is the patterned substrate of figure 5 in other zones.
B) growing epitaxial, epitaxial loayer 3 comprises: resilient coating, n type semiconductor layer, active layer, p type semiconductor layer;
C) make N type and P type electrode, preparation N type electrode on the n type semiconductor layer of epitaxial loayer, preparation P type electrode on p type semiconductor layer;
D) abrasive disc is through grinding substrate thinning;
E) scribing, laser sees through epitaxial loayer and focuses on substrate interior, carries out the stealth cutting;
F) sliver separates wafer along the road of drawing that has cut through the sliver machine;
G) expansion is drawn back certain distance with the individual chips behind sliver.
Key of the present invention is on substrate, to form figure, to be applicable to stealthy cutting technique.Stealthy cutting technique is that laser focusing is inner in wafer, cuts.In laser and the interactional process of wafer, can form metamorphic layer in the wafer, metamorphic layer can effectively reduce the thermal effect of laser and wafer interaction generation; Thereby reduce injury, reduce fragmentation, reduce cutting thickness active layer; Increase the chip number, improve the consistency of chip.
Fig. 4 is stealthy cutting process sketch map, is planar structure owing to draw the road, and there is not scattering process in laser, therefore can utilize stealthy cutting to carry out scribing.
The difference of Fig. 4 and Fig. 5 is that the stealth cutting among Fig. 3 is inner in wafer with laser action, does not form paddle-tumble after the cutting, can produce one deck metamorphic layer; And the laser surface among Fig. 4 cutting with laser action in epitaxial loayer, the cutting back forms paddle-tumble.
Metamorphic layer among Fig. 4 and the paddle-tumble among Fig. 5 all are to help the sliver of back and expand technology; Just when the laser surface cutting forms paddle-tumble, can produce many accessory substances that contain coke on the Cutting Road, this accessory substance can absorb the light that active illuminating layer sends; Cause LED brightness to reduce by 20%; If these accessory substances are bonded at the PN junction place of LED, will cause electric leakage, even have punch-through; And the metamorphic layer that the stealthy cutting of laser produces can effectively reduce the thermal effect of laser and wafer interaction generation, thereby reduces the injury to active layer, reduces fragmentation, reduces cutting thickness, increases the chip number, the consistency of raising chip.
The above is merely preferred embodiment of the present invention, and is in order to restriction the present invention, not all within spirit of the present invention and principle, any modification of being done, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (13)
1. the preparation method of a great power LED is characterized in that, this method comprises the following steps:
A) on substrate, form graphic structure through lithographic technique with planar section;
B) growing epitaxial on substrate;
C) on epitaxial loayer, prepare the P type electrode utmost point and N type electrode successively;
D) with substrate thinning;
E) plate at substrate back and increase anti-layer and metal level;
F) carry out scribing in substrate face, sliver and expansion form a plurality of led chips unit.
2. method according to claim 1 is characterized in that, the substrate in the said step a) is sapphire, SiC or Si.
3. method according to claim 1 is characterized in that, in said step a), during etched substrate, does not form figure in the Cutting Road zone, is planar structure; Other zones form figure, are nonplanar structure.
4. method according to claim 3 is characterized in that, the nonplanar structure of graph substrate is prism, circular cone, cylinder or the round platform of periodicity or no periodic array.
5. method according to claim 1 is characterized in that, in the said step e), backside reflection layer is the alternately stack of high-index material and low-index material, and metal layer on back is the combination of any one or a few metal among Ag, Al, Cr, Pt, the Au.
6. according to the described method of claim 1, it is characterized in that in the said step f), the concrete mode of said positive scribing is: laser sees through epitaxial loayer and cuts in substrate interior.
7. the preparation method of a great power LED is characterized in that, this method comprises the following steps:
A) on substrate, form the defective barrier layer, remove the part figure through lithographic technique;
B) growing epitaxial on described defective barrier layer;
C) on epitaxial loayer, prepare the P type electrode utmost point and N type electrode successively;
D) with substrate thinning;
E) plate at substrate back and increase anti-layer and metal level;
F) carry out scribing in substrate face, sliver and expansion form a plurality of led chips unit.
8. method according to claim 7 is characterized in that, the substrate in the said step a) is sapphire, SiC or Si.
9. method according to claim 7 is characterized in that, the material on defective barrier layer is high catoptric arrangement in the said step a), the arbitrary wavelength of reflection wavelength in the 364nm-1064nm wavelength band.
10. method according to claim 7 is characterized in that, in said step a), during the etching defect barrier layer, removes the figure in Cutting Road zone, forms planar structure, and the zone beyond the Cutting Road keeps graphic structure, is nonplanar structure.
11. nonplanar structure according to claim 10 is characterized in that, the nonplanar structure on defective barrier layer is prism, circular cone, cylinder or the round platform of periodicity or no periodic array.
12. method according to claim 7; It is characterized in that; In the said step e), the reflector of substrate back is the alternately stack of high-index material and low-index material, and metal level is the combination of any one or a few metal among Ag, Al, Cr, Pt, the Au.
13., it is characterized in that in the said step f), the concrete mode of said positive scribing is according to the described method of claim 7: laser sees through epitaxial loayer and cuts in substrate interior.
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Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102990229A (en) * | 2012-11-20 | 2013-03-27 | 深圳市大族激光科技股份有限公司 | LED (Light Emitting Diode) wafer cutting method |
| CN103035573A (en) * | 2013-01-05 | 2013-04-10 | 合肥彩虹蓝光科技有限公司 | Separation method for semiconductor units |
| CN103236481A (en) * | 2013-03-18 | 2013-08-07 | 佛山市国星半导体技术有限公司 | Patterned substrate, LED (light emitting diode) chip and LED chip production method |
| CN103400779A (en) * | 2013-07-09 | 2013-11-20 | 程君 | Manufacturing method of semiconductor display panel |
| CN103633198A (en) * | 2013-11-15 | 2014-03-12 | 圆融光电科技有限公司 | LED (light-emitting diode) chip manufacturing method and LED chip |
| CN103647005A (en) * | 2013-12-04 | 2014-03-19 | 南昌大学 | Pattern-segmented sapphire substrate used for AlGaInN material system film growth |
| CN103681982A (en) * | 2012-09-26 | 2014-03-26 | 奇力光电科技股份有限公司 | Method for manufacturing light emitting diode |
| CN104078534A (en) * | 2013-03-27 | 2014-10-01 | 上海蓝光科技有限公司 | Front cutting technology of light emitting diode |
| CN104201254A (en) * | 2014-07-31 | 2014-12-10 | 华灿光电(苏州）有限公司 | Manufacturing method of light-emitting diode chip provided with omnidirectional reflector (ODR) |
| CN106124548A (en) * | 2016-06-23 | 2016-11-16 | 中山德华芯片技术有限公司 | A kind of the hidden of composite construction SiC substrate cuts experimental test procedures |
| CN107068828A (en) * | 2017-05-02 | 2017-08-18 | 聚灿光电科技股份有限公司 | Led chip and preparation method thereof |
| CN107564805A (en) * | 2017-06-30 | 2018-01-09 | 中国电子科技集团公司第五十五研究所 | A kind of preparation method of ultra-thin carbonization silicon |
| CN109285925A (en) * | 2018-10-18 | 2019-01-29 | 佛山市国星半导体技术有限公司 | Full-color imaging LED chip of one kind and preparation method thereof |
| CN114226960A (en) * | 2021-12-31 | 2022-03-25 | 杭州银湖激光科技有限公司 | Ultrafast laser cutting method for silicon wafer |
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Cited By (24)
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| CN103681982A (en) * | 2012-09-26 | 2014-03-26 | 奇力光电科技股份有限公司 | Method for manufacturing light emitting diode |
| CN102990229A (en) * | 2012-11-20 | 2013-03-27 | 深圳市大族激光科技股份有限公司 | LED (Light Emitting Diode) wafer cutting method |
| CN102990229B (en) * | 2012-11-20 | 2016-04-13 | 大族激光科技产业集团股份有限公司 | LED wafer cutting method |
| CN103035573A (en) * | 2013-01-05 | 2013-04-10 | 合肥彩虹蓝光科技有限公司 | Separation method for semiconductor units |
| CN103236481A (en) * | 2013-03-18 | 2013-08-07 | 佛山市国星半导体技术有限公司 | Patterned substrate, LED (light emitting diode) chip and LED chip production method |
| CN104078534A (en) * | 2013-03-27 | 2014-10-01 | 上海蓝光科技有限公司 | Front cutting technology of light emitting diode |
| CN104078534B (en) * | 2013-03-27 | 2018-07-10 | 上海蓝光科技有限公司 | A kind of front cutting technique of light emitting diode |
| CN103400779A (en) * | 2013-07-09 | 2013-11-20 | 程君 | Manufacturing method of semiconductor display panel |
| CN103633198B (en) * | 2013-11-15 | 2016-03-16 | 圆融光电科技有限公司 | LED chip manufacture method and LED chip |
| CN103633198A (en) * | 2013-11-15 | 2014-03-12 | 圆融光电科技有限公司 | LED (light-emitting diode) chip manufacturing method and LED chip |
| CN103647005A (en) * | 2013-12-04 | 2014-03-19 | 南昌大学 | Pattern-segmented sapphire substrate used for AlGaInN material system film growth |
| CN104201254A (en) * | 2014-07-31 | 2014-12-10 | 华灿光电(苏州）有限公司 | Manufacturing method of light-emitting diode chip provided with omnidirectional reflector (ODR) |
| CN104201254B (en) * | 2014-07-31 | 2018-08-17 | 华灿光电(苏州）有限公司 | A kind of preparation method for the light-emitting diode chip for backlight unit having full-shape speculum |
| CN106124548A (en) * | 2016-06-23 | 2016-11-16 | 中山德华芯片技术有限公司 | A kind of the hidden of composite construction SiC substrate cuts experimental test procedures |
| CN106124548B (en) * | 2016-06-23 | 2019-01-11 | 中山德华芯片技术有限公司 | A kind of the hidden of composite construction SiC substrate cuts experimental test procedures |
| CN107068828A (en) * | 2017-05-02 | 2017-08-18 | 聚灿光电科技股份有限公司 | Led chip and preparation method thereof |
| CN107564805A (en) * | 2017-06-30 | 2018-01-09 | 中国电子科技集团公司第五十五研究所 | A kind of preparation method of ultra-thin carbonization silicon |
| CN109285925A (en) * | 2018-10-18 | 2019-01-29 | 佛山市国星半导体技术有限公司 | Full-color imaging LED chip of one kind and preparation method thereof |
| CN109285925B (en) * | 2018-10-18 | 2024-02-02 | 佛山市国星半导体技术有限公司 | Full-color imaging LED chip and manufacturing method thereof |
| CN114226960A (en) * | 2021-12-31 | 2022-03-25 | 杭州银湖激光科技有限公司 | Ultrafast laser cutting method for silicon wafer |
| CN114420861A (en) * | 2022-01-04 | 2022-04-29 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| CN114420861B (en) * | 2022-01-04 | 2023-06-30 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| CN115020565A (en) * | 2022-06-06 | 2022-09-06 | 淮安澳洋顺昌光电技术有限公司 | Preparation method of composite patterned substrate and epitaxial structure with air gap |
| CN115020565B (en) * | 2022-06-06 | 2023-10-20 | 淮安澳洋顺昌光电技术有限公司 | Preparation method of composite patterned substrate and epitaxial structure with air gap |
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