CN102593277B - Vertical light emitting diode and manufacturing method thereof - Google Patents
Vertical light emitting diode and manufacturing method thereof Download PDFInfo
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Abstract
The invention provides a method for manufacturing a vertical light-emitting diode, which comprises the following steps: providing a substrate; forming a semiconductor layer on the substrate, the semiconductor layer having a compound composed of group II to VI elements; forming a metal reflecting layer to be combined with the semiconductor layer; forming at least one intermediate layer and at least one diamond-like carbon layer; forming a composite material layer; removing the substrate; forming a first electrode layer and a second electrode layer respectively arranged on one side of the semiconductor layer and one side of the composite material layer; wherein, at least one intermediate layer and at least one diamond-like carbon layer are stacked on one side of the metal reflecting layer in a laminated mode. The invention also provides a vertical light-emitting diode prepared by the manufacturing method.
Description
Technical field
The invention relates to a kind of vertical LED and preparation method thereof, espespecially one has high-power and large-sized vertical LED of tool and preparation method thereof.
Background technology
From the sixties, the advantages such as the luminescence that the power consumption of light-emitting diode is low and long-lasting, replace gradually in daily life and are used for throwing light on or the purposes such as the indicator light of various electric equipment or light source.What is more, and light-emitting diode, towards the development of multicolour and high brightness, has been applied in large-scale outdoor display board or traffic sign.
But the light-emitting diode 100 used in known technology, its structure is as shown in Figure 1 many, is all to do positive electrode 107 and negative electrode 108 in the same side.Moreover, the substrate 101 (as sapphire) that known light-emitting diode uses is non-conductive, therefore electric current must change level crossing current into by vertical following current in semiconductor layer 102, so make electric current be concentrated in interior crook, electronic shell and the electric hole layer of P-N interface cannot be used completely, reduce luminous efficiency.In addition, aforementioned currents can produce focus at the concentrated place of semiconductor layer 102, makes the lattice in semiconductor layer 102 produce defect, therefore affects the useful life of light-emitting diode 100; Or only can to reduce power to avoid the generation of focus, only this can reduce the illumination effect of light-emitting diode 100 and limit its purposes.
The problem causing electric current to turn in light-emitting diode cannot be improved with the improvement of package design, even if such as to cover crystal type to make light-emitting diode, electric current still cannot be avoided to turn and to produce focus, cause lattice defect, affect the shortcoming such as luminous efficiency and reduction in useful life.
Therefore, a kind of vertical LED is separately had to be produced with the conception improving the sense of current in these light-emitting diode both sides by electrode fabrication.But present used vertical LED, uses carborundum (SiC) substrate to grow carbonization gallium more.But because SiC single crystal substrate price is too high, generally replace with the substrate such as Si or metal, and with corrupt split epitaxial loayers such as Jin-Jin, Jin Xi-Jin Xi, indium-indiums.But, because the thermal expansion coefficient difference of this epitaxial loayer and metal substrate or metal bonding layer two kinds of storerooms is comparatively large, in follow-up stripping technology, often cause the yield of light-emitting diode not good.
Therefore, a kind of high-power, excellent in heat dissipation effect is needed at present badly and the large-sized Light-emitting Diode And Its Making Method of tool.
Summary of the invention
For reaching aforementioned object, the invention provides a kind of manufacture method of vertical LED, it comprises the following steps: to provide a substrate; On substrate, form semi-conductor layer, this semiconductor layer has the compound formed with II to VI race element; Form a metallic reflector, itself and semiconductor layer are be combined with each other; Form at least one intermediate layer and at least one class brill carbon-coating; Form a composite layer; Remove substrate; And forming one first electrode layer and a second electrode lay, it is arranged at the side of semiconductor layer and composite layer respectively; Wherein, at least one intermediate layer and at least one class bore carbon-coating is the side being mutually stacked in metallic reflector in the mode of lamination.
Manufacturing method according to the invention, is wherein not particularly limited the mode of substrate removal, as long as can not cause when removing substrate, causes each Rotating fields in light-emitting diode to cause bending because producing interface stress.The mode that preferably removes by a laser, substrate and semiconductor layer is peeling.
In addition, manufacturing method according to the invention, can according to formation method technique being selected semiconductor layer, metallic reflector, at least one intermediate layer and at least one class bore carbon-coating, wherein better use is formed with depositions such as cathode arc, sputter, evaporation, plating, electroless-plating or coatings.
Hold, manufacturing method according to the invention, wherein substrate can be Al
2o
3the substrate of (sapphire), Si, SiC, GaAs, GaP, AlP, GaN, C (graphite), hBN or C (diamond); Or at least one cation be the substrate of the nitride of B, Al, Ga, In, Be, Mg, phosphide or arsenide; The composition of semiconductor layer can be Al
2o
3(sapphire), Si, SiC, GaAs, GaP, AlP, GaN, C (graphite), hBN or C (diamond); Or at least one cation be the nitride of B, Al, Ga, In, Be, Mg, phosphide or arsenide; Metallic reflector can be and is at least onely selected from the group be made up of Ag, Al, Ni, Co, Pd, Pt, Au, Zn, Sn, Sb, Pb, Cu, CuAg, NiAg and aforementioned metal alloy, and the thickness of metallic reflector does not limit, as long as directing light can be reached and increase luminous efficiency, goodly can be 100-500nm, the best is 200nm.
Manufacturing method according to the invention, wherein, the material in intermediate layer is that choice for use can produce with carbon and reacts, and can synthesizing carbide (carbide former) metal all can, be preferably to comprise and be at least onely selected from the materials such as the group be made up of the alloy of Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W and aforementioned metal.And the thickness in this intermediate layer does not limit, be preferably 50-500nm, be more preferred from 100nm.
Manufacturing method according to the invention, it is get rid of the used heat that light-emitting diode produces when luminescence that class bores carbon-coating, and gets rid of rapidly in the mode of conduction, to extend the useful life of light-emitting diode.
Manufacturing method according to the invention, composite layer can comprise the composite material that at least one metal and diamond form, and diamond in composite layer can an individual layer, multilayer or random distribution cloth bore arrangement, wherein diamond accounts for the 25-60% of composite layer cumulative volume, is preferably 30-50%.Composition as metal can be and is at least onely selected from the group be made up of Cu, Ag, Co, Ni, W, Fe, Ti, Cr and B; Diamond can be synthesizing diamond abrasive particle (synthetic diamond grits), and the better particle diameter of diamond is 1 μm of-1mm.
Manufacturing method according to the invention, the thickness of composite layer is not particularly limited, and preferably thickness is 100-500 μm, is more preferred from 150 μm.In addition, the thermal coefficient of expansion of composite layer can be complied with required and adjust, to avoid the semiconductor layer causing light-emitting diode in manufacture process because of interface stress to produce bending or internal flaw, and then product yield is made to decline and increase production cost or optical attenuation effect; According to manufacturing method according to the invention, composite layer preferably thermal coefficient of expansion is between 2-10ppm/ DEG C.Moreover, manufacturing method according to the invention, wherein also include one by the surperficial Throwing light of this composite layer to the step of Ra < 1 μm, when mainly making substrate and light emitting diode construction peel off, the error of the tabular surface of release surface still can be kept to be less than 1mm.
Manufacturing method according to the invention, wherein also include a transparent class and bore the side that carbon-coating is formed at semiconductor layer, the thermal radiation produced in light-emitting diode (as fluorescent bisque) mainly can be got rid of rapidly, with the side's of increasing optical efficiency and production life cycle by its effect.Bore carbon-coating as transparent class to obtain according to any sedimentation of required use, be preferably and use plasma chemical vapor deposition (PECVD) to be formed.In addition, above-mentioned transparent class bores carbon-coating can include hydrogen atom further in wherein, and all calculate if its content bores carbon-coating with transparent class, hydrogen atom can account for 15-40 atomic percent, to increase the luminous efficiency of hot type except effect and light-emitting diode.
The present invention also provides a kind of manufacture method of vertical LED, and it comprises the following steps: to provide a substrate; On substrate, form semi-conductor layer, semiconductor layer has the compound formed with II to VI race element; Form a metallic reflector, itself and semiconductor layer are be combined with each other; Form a composite layer; Remove this substrate; And forming one first electrode layer and a second electrode lay, it is arranged at the side of this semiconductor layer and this composite layer respectively.As for according to this manufacture method, the definition of method step wherein and each Rotating fields (as substrate, semiconductor layer, metallic reflector, composite layer and the first electrode layer and the second electrode lay) is as above-mentioned.
Another object of the present invention is providing a kind of vertical LED, and it comprises: semi-conductor layer, and it has the compound formed with II to VI race element; One metallic reflector be combined with each other with semiconductor layer; At least one intermediate layer; At least one class bores carbon-coating; One composite layer; And one first electrode layer and a second electrode lay, it is arranged at the side of semiconductor layer and composite layer respectively; Wherein, at least one intermediate layer and at least one class bore carbon-coating is the side being mutually stacked in metallic reflector in the mode of lamination.
According to vertical LED of the present invention, wherein the composition of semiconductor layer can be Al
2o
3(sapphire), Si, SiC, GaAs, GaP, AlP, GaN, C (graphite), hBN or C (diamond); Or at least one cation be the nitride of B, Al, Ga, In, Be, Mg, phosphide or arsenide; Metallic reflector can be and is at least onely selected from the group be made up of Ag, Al, Ni, Co, Pd, Pt, Au, Zn, Sn, Sb, Pb, Cu, CuAg, NiAg and aforementioned metal alloy, and the thickness of metallic reflector does not limit, as long as directing light can be reached and increase luminous efficiency, goodly can be 100-500nm, the best is 200nm.
According to vertical LED of the present invention, wherein, the material in intermediate layer is that choice for use can produce with carbon and reacts, and can synthesizing carbide (carbide former) metal all can, be preferably to comprise and be at least onely selected from the materials such as the group be made up of the alloy of Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W and aforementioned metal.And the thickness in this intermediate layer does not limit, be preferably 50-500nm, be more preferred from 100nm.
According to vertical LED of the present invention, it is get rid of the used heat that light-emitting diode produces when luminescence that class bores carbon-coating, and gets rid of rapidly in the mode of conduction, to extend the useful life of light-emitting diode.
According to vertical LED of the present invention, composite layer can comprise the composite material that at least one metal and diamond form, and diamond in composite layer can an individual layer, multilayer or random distribution cloth bore arrangement, wherein diamond accounts for the 25-60% of composite layer cumulative volume, is preferably 30-50%.Composition as metal can be and is at least onely selected from the group be made up of Cu, Ag, Co, Ni, W, Fe, Ti, Cr and B; Diamond can be synthesizing diamond abrasive particle (synthetic diamond grits), and the better particle diameter of diamond is 1 μm of-1mm.
According to vertical LED of the present invention, the thickness of composite layer is not particularly limited, and preferably thickness is 100-500 μm, is more preferred from 150 μm.In addition, the thermal coefficient of expansion of composite layer can be complied with required and adjust, to avoid the semiconductor layer causing light-emitting diode in manufacture process because of interface stress to produce bending or internal flaw, and then product yield is made to decline and increase production cost or optical attenuation effect; According to manufacturing method according to the invention, composite layer preferably thermal coefficient of expansion is between 2-10ppm/ DEG C.Moreover according to vertical LED of the present invention, wherein the surface of composite layer has Throwing light to Ra < 1 μm.
According to vertical LED of the present invention, wherein also include a transparent class and bore the side that carbon-coating is formed at semiconductor layer, the thermal radiation produced in light-emitting diode (as fluorescent bisque) mainly can be got rid of rapidly, with the side's of increasing optical efficiency and production life cycle by its effect.Bore carbon-coating as transparent class to obtain according to any sedimentation of required use, be preferably and use plasma chemical vapor deposition (PECVD) to be formed.In addition, above-mentioned transparent class bores carbon-coating can include hydrogen atom further in wherein, and all calculate if its content bores carbon-coating with transparent class, hydrogen atom can account for 15-40 atomic percent, to increase the luminous efficiency of hot type except effect and light-emitting diode.
According to another object of the present invention, providing a kind of vertical LED, it comprises: semi-conductor layer, and it has the compound formed with II to VI race element; One metallic reflector be combined with each other with semiconductor layer; One composite layer; And one first electrode layer and a second electrode lay, it is arranged at the side of semiconductor layer and composite layer respectively; Wherein, composite layer is engaged to metallic reflector with Au or Au-Sn in about 300 DEG C of direct soft solderings, or directly in the mode that high temperature engages.As for the structure according to this vertical LED, wherein the definition of each Rotating fields (as substrate, semiconductor layer, metallic reflector, composite layer and the first electrode layer and the second electrode lay) is as above-mentioned.
From the above, known used light-emitting diode is all penetrated at homonymy due to positive and negative two electrodes, and the substrate (as sapphire) used because of known light-emitting diode is non-conductive, therefore electric current must change level crossing current into by vertical following current in the semiconductor layer, so make electric current be concentrated in interior crook, electronic shell and the electric hole layer of P-N interface cannot be used completely, reduce luminous efficiency.In addition, aforementioned currents can produce focus at concentrated place, makes the lattice in semiconductor layer produce defect, therefore affects the useful life of light-emitting diode.But, according to vertical LED of the present invention and manufacture method, it not only uses the composite layer be made up of at least one metal and diamond, and use at least one intermediate layer and at least one class to bore carbon-coating, and the first electrode layer and a second electrode lay are arranged at respectively the both sides of light splitting diode structure simultaneously.Thus, the present invention by class bore carbon-coating there is high pyroconductivity, the used heat produced during to get rid of rapidly lumination of light emitting diode, and to make in semiconductor layer can not to produce internal crystal framework defect because electric current distribution is uneven and cause the problem such as light decay or useful life.
Therefore, according to light-emitting diode of the present invention and manufacture method thereof, can realize the vertical LED that one has large scale (> 1mm), big current (> 1A/mm2) and high-power (> 10W), it is aobvious can be better than many known use electric currents in parallel with the light-emitting diode of curved streaming.According to vertical LED of the present invention and manufacture method thereof, have that luminous efficiency is better makes it brighter, and the pyroconductivity of boring carbon-coating excellence by class to get rid of luminescence time the used heat that produces, and solve internal flaw and make its more resistance to advantage of waiting so long.
Accompanying drawing explanation
For above-mentioned feature and advantage of the present invention can be become apparent, special embodiment below, and coordinate accompanying drawing to be described in detail below, wherein:
Fig. 1 is known middle light emitting diode construction schematic diagram.
Fig. 2 A to 2E is the manufacture method schematic flow sheet of the vertical LED of a preferred embodiment of the present invention.
Fig. 3 is the straight light emitting diode construction schematic diagram of another preferred embodiment of the present invention.
Fig. 4 is the straight light emitting diode construction schematic diagram of the present invention's preferred embodiment again.
If Fig. 5 A to 5B be in known middle light emitting diode construction plated metal and semiconductor layer interface only with mechanical type without chemical bonded refractory time, be peeling electron micrograph signal.
Fig. 6 is the straight light-emitting diode part-structure electron micrograph of a preferred embodiment of the present invention.
Fig. 7 is the thermal diffusion coefficient of the brill-composite copper material bed of material and the comparison diagram of the coefficient of heat conduction in a preferred embodiment of the present invention.
Fig. 8 to Fig. 9 is the diamond body integration rate comparison diagram of composite layer in a preferred embodiment of the present invention.
Embodiment
Refer to Fig. 2 E and Fig. 3, it is the vertical LED structure that method constructed in accordance obtains, and includes semi-conductor layer 202, and it has the compound formed with II to VI race element; One metallic reflector 203 be combined with each other with semiconductor layer 202; At least one intermediate layer 204; At least one class bores carbon-coating 205; One composite layer 206; And one the first electrode layer 207 and that can be negative electrode can be the second electrode lay 208 of positive electrode, it is arranged at the side of semiconductor layer 202 and composite layer 206 respectively; Wherein, at least one intermediate layer 204 and at least one class bore carbon-coating 205 is the sides being mutually stacked in metallic reflector in the mode of lamination.
Below, the manufacture method of vertical LED of the present invention will be described in detail in detail:
Embodiment 1
Referring to Fig. 2 A to 2E, is the specific embodiment that the present invention manufactures vertical LED.First, as shown in Figure 2 A, one substrate 201 is provided, substrate 201 is for using sapphire substrate in the present embodiment, and can according to needed for technologic, choice for use Si, SiC, GaAs, GaP, AlP, GaN, C (graphite), hBN, C (diamond) or at least one cation are the substrate of the nitride of B, Al, Ga, In, Be, Mg, phosphide or arsenide.Then as Fig. 2 B, form semi-conductor layer 202 on substrate 201, this semiconductor layer 202 has the compound formed with II to VI race element, such as Al
2o
3(sapphire), Si, SiC, GaAs, GaP, AlP, GaN, C (graphite), hBN, C (diamond) or at least one cation are the nitride of B, Al, Ga, In, Be, Mg, phosphide or arsenide, are in the present embodiment to use GaN as semiconductor layer 202.Thereafter as shown in Figure 2 C, form a metallic reflector 203, make it deposit in the mode of cathode arc and be combined with each other with semiconductor layer 202, metallic reflector 203 can be Ag or Al, other material such as Ni, Co, Pd, Pt, Au, Zn, Sn, Sb, Pb, Cu, CuAg, NiAg or aforementioned metal alloy that may be selected to be metallic reflector 203 all can, and the thickness of metallic reflector 203 does not limit, as long as directing light can be reached and increase luminous efficiency, goodly can be 100-500nm, metallic reflector 203 is in the present embodiment about 200nm.
Then, as shown in Figure 2 D, sequentially form an intermediate layer 204 in the mode of such as sputter and a class bores carbon-coating 205, as long as the material wherein about intermediate layer 204 selects to use to produce with carbon to react, and the metal of energy synthesizing carbide all can, being preferably to comprise and being at least onely selected from the materials such as the group be made up of the alloy of Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W and aforementioned metal, is use titanium as intermediate layer 204 in the present embodiment.Thickness as intermediate layer 204 does not limit, and is preferably 50-500nm, and the intermediate layer of the present embodiment is about 100nm.And the thickness that class bores carbon-coating 205 is not particularly limited, as long as preferably radiating effect and combining closely with intermediate layer 204 can be reached, and can to bore carbon-coating 205 mutually stacking in the mode of lamination because of intermediate layer 204 and class, reach each Rotating fields in reduction light-emitting diode further and cause bending situation because producing interface stress, and cause yield to reduce, class bore carbon-coating 205 preferred thickness for be greater than more than 300nm all can, the present embodiment bores carbon-coating 205 with the class of about 500nm thickness.In addition, more can according to needed for technologic, optionally form a thinner intermediate layer 204 (about 60nm) again and bore carbon-coating 205 in upper class, and form structure as shown in Figure 2 D.
Finally, as Fig. 2 E, form a composite layer 206 in aforementioned structure, and remove substrate 201; Thereafter and form one first electrode layer 207 and a second electrode lay 208, it is arranged at the side of semiconductor layer 202 and composite layer 206 respectively.And composite layer 206 can comprise the composite material that at least one metal and diamond form, and diamond also optionally bores arrangement with the cloth of an individual layer, multilayer or random distribution in this composite layer.Wherein diamond accounts for the 25-60% of composite layer 206 cumulative volume, goodly diamond can be used to be the ratio of the 30-50% accounting for composite layer cumulative volume as the present embodiment.Composition as metal can be and is at least onely selected from the group be made up of Cu, Ag, Co, Ni, W, Fe, Ti, Cr and B, is for its composition in the present embodiment with metallic nickel; Diamond can be synthesizing diamond abrasive particle (synthetic diamond grits), and the better particle diameter of diamond is 1 μm of-1mm.In other words, the composite layer 206 of the present embodiment is for using one nickel-diamond composite material.As for composite layer 206 thickness preferably thickness be 100-500 μm, in the present embodiment, the thickness of composite layer 206 is about 150 μm.
According to the present embodiment, the mode that substrate 201 removes by a gas laser (KrF, wavelength is about 248nm), substrate and semiconductor layer is peeling.Method is not only easy comparatively rapidly thus, and the vertical LED structure because obtaining prepared by the present embodiment, also can not causing when removing substrate 201, causing each Rotating fields in light-emitting diode to cause bending because producing interface stress.Moreover, according to the present embodiment, the surface of composite layer 206 is carried out the step of Throwing light to Ra < 1 μm, when mainly making substrate 201 and light emitting diode construction peel off, the error of the tabular surface of release surface still can be kept to be less than 1mm.
In addition, according to the manufacture method of the present embodiment, according to formation method technique being selected semiconductor layer 202, metallic reflector 203, intermediate layer 204 and class bore carbon-coating 205, wherein also can use and be formed in modes such as cathode arc, sputter, evaporation, plating, electroless-plating, coating, welding or depositions.
Described in brought forward, the thermal coefficient of expansion of composite layer 206 can be complied with required and adjust, to avoid the semiconductor layer 202 causing light-emitting diode in manufacture process because of interface stress to produce bending or internal flaw, and then product yield is made to decline and increase production cost or optical attenuation effect; According to the composite layer 206 of the present embodiment, its thermal coefficient of expansion is about 10ppm/ DEG C.
According to the manufacture method of the present embodiment, a transparent class can be selected further to bore the side that carbon-coating (not shown) is formed at semiconductor layer, the thermal radiation produced in light-emitting diode (as fluorescent bisque) mainly can be got rid of rapidly, to increase luminous efficiency and production life cycle by its effect.Bore carbon-coating as transparent class to obtain according to any sedimentation of required use, such as, plasma chemical vapor deposition (PECVD) can be used to be formed.In addition, above-mentioned transparent class bores carbon-coating can include hydrogen atom further in wherein, and all calculate if its content bores carbon-coating with transparent class, hydrogen atom can account for 15-40 atomic percent, to increase the luminous efficiency of hot type except effect and light-emitting diode.
Embodiment 2
Manufacture method used in the present embodiment is similar to embodiment 1, therefore structure also can directly with reference to as Fig. 2 E, difference is it is be formed at metallic reflector 203 (as silver) on semiconductor layer 202 (as GaN) in the mode of sputter in manufacture process, and is that use one bronze medal-diamond composite material is as composite layer 206.Therefore, according to the composite layer 206 of the present embodiment, its thermal coefficient of expansion is about 5ppm/ DEG C.Structure and characteristics as other each layer be as in embodiment 1 define.
Embodiment 3
As shown in Figure 3, manufacture method used in the present embodiment is similar to embodiment 1 and embodiment 2, difference is will to make in manufacture process intermediate layer 304 and class, and to bore carbon-coating 305 sequentially mutually stacking, and the laminated construction gross thickness that this intermediate layer 304 and class bore carbon-coating 305 is about 3 μm, and be that use one bronze medal-nickel-diamond composite material is as composite layer 306 in the present embodiment.Therefore, according to the composite layer 306 of the present embodiment, its thermal coefficient of expansion can according to technologic required adjustment about 2-10ppm/ DEG C.Structure and characteristics as other each layer be as in embodiment 1 define.
Embodiment 4
As shown in Figure 4, manufacture method used in the present embodiment is similar to embodiment 1 and embodiment 2, difference is that not forming class in the present embodiment bores carbon-coating and intermediate layer, but form the structure of one first electrode 407/ semiconductor layer 402/ metallic reflector 403/ composite layer 406/ second electrode 408, and wherein composite layer 406 is engaged to metallic reflector 403 with Au or Au-Sn in about 300 DEG C of direct soft solderings, maybe according to needed for technique, directly can engage the mode of direct bonded composite layer 406 and metallic reflector 403 with high temperature.As for each Rotating fields (as substrate, semiconductor layer, metallic reflector, composite layer and the first electrode layer and the second electrode lay) according to the present embodiment be as embodiment 1 define.
According to previous embodiment, and refer to Fig. 5 A to Fig. 7, known middle light emitting diode construction, before the step of carrying out laser lift-off, can make one deck reflective metal layer (as silver) on the semiconductor layer, thereafter and connect the supporter of a conduction again.But, metallic reflector often because thermal coefficient of expansion is much larger than semiconductor layer (as GaN), so interface can produce stress.In view of this, known light-emitting diode electric current when being energized is advance by infiltration along the minimum place of resistance, and the local temperature that stress is larger can raise fast, and metallic reflector can large for the support of the lattice of semiconductor layer.And due to light-emitting diode switch frequent, semiconductor layer lattice can be repeated to pull so that continuous output defect, and easily cause the stripping (as Fig. 5 A and Fig. 5 B) between metallic reflector and semiconductor layer, so that the brightness of light-emitting diode is caused to lower fast.At this moment, if as the present invention use mat class bore carbon-coating there is high pyroconductivity, the used heat produced during to get rid of rapidly lumination of light emitting diode, and significantly reduce effect of interface stress because of tool, and can make can not to produce internal crystal framework defect because electric current distribution is uneven in semiconductor layer and cause the problem such as light decay or useful life (as Fig. 6).
Moreover the composite layer included by the present invention and class bore carbon-coating, and to comprise the light emitting diode construction of brill-composite copper material bed of material, its analysis is as shown in Figure 7, effectively can control thermal coefficient of expansion according to the present invention obviously as seen, also can reduce thermal resistance.
Brought forward, the thermal coefficient of expansion (CTE) of the composite layer in the above embodiment of the present invention can adjust according to diamond particle diameter and percentage by volume, as previously mentioned, in order to control better CTE value (as between 2-10ppm/ DEG C), therefore preferably diamond body integration rate is 30-50Vol% (as shown in Figure 8), and preferably diamond particle diameter is as shown in Figure 9; More can according to need, the weight percent optionally using carbide auxiliary agent is 2-5wt%, and this carbide auxiliary agent can be Fe, Co, Ni, Cr, Ti or B etc.
Therefore, according to the light-emitting diode that the manufacture method of the present embodiment obtains, can realize the vertical LED that one has large scale (> 1mm), big current (> 1A/mm2) and high-power (> 10W), it is aobvious can be better than many known use electric currents in parallel with the light-emitting diode of curved streaming.Therefore, and have that luminous efficiency is better makes it brighter, and the pyroconductivity of boring carbon-coating excellence by class to get rid of luminescence time the used heat that produces, and solve internal flaw and make its more resistance to advantage of waiting so long.
Above-described embodiment is only citing for convenience of description, and the interest field that the present invention advocates from should being as the criterion with described in right, but not is only limitted to above-described embodiment.
Claims (36)
1. a manufacture method for vertical LED, it comprises the following steps:
One substrate is provided;
On this substrate, form semi-conductor layer, this semiconductor layer has the compound formed with II to VI race element;
Form a metallic reflector, itself and this semiconductor layer is be combined with each other;
Form at least one intermediate layer and at least one class brill carbon-coating;
Form a composite layer;
Remove this substrate; And
Form one first electrode layer and a second electrode lay, it is arranged at the side of this semiconductor layer and this composite layer respectively;
Wherein, it is the side being mutually stacked in this metallic reflector in the mode of lamination that this at least one intermediate layer and this at least one class bore carbon-coating, this composite layer comprises the composite material that at least one metal and diamond form, and this diamond is bore arrangement with the cloth of an individual layer, multilayer or random distribution in this composite layer;
Wherein, this intermediate layer comprises at least onely being selected from the group be made up of the alloy of Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W and aforementioned metal.
2. the manufacture method of vertical LED as claimed in claim 1, wherein, this substrate is Al
2o
3, Si, SiC, GaAs, GaP, AlP, GaN, C, hBN or C substrate; Or at least one cation be the substrate of the nitride of B, Al, Ga, In, Be, Mg, phosphide or arsenide.
3. the manufacture method of vertical LED as claimed in claim 1, wherein, the step that removes of this substrate by a laser, itself and this semiconductor layer is peeled off.
4. the manufacture method of vertical LED as claimed in claim 1, wherein, this semiconductor layer, this metallic reflector, this at least one intermediate layer and this at least one class bore carbon-coating is formed with cathode arc, sputter, evaporation, plating, electroless-plating or coating deposit.
5. the manufacture method of vertical LED as claimed in claim 1, wherein, the composition of this semiconductor layer is Al
2o
3, Si, SiC, GaAs, GaP, AlP, GaN, C, hBN or C; Or at least one cation be the nitride of B, Al, Ga, In, Be, Mg, phosphide or arsenide.
6. the manufacture method of vertical LED as claimed in claim 1, wherein, this metallic reflector is at least onely selected from the group be made up of Ag, Al, Ni, Co, Pd, Pt, Au, Zn, Sn, Sb, Pb, Cu, CuAg, NiAg and aforementioned metal alloy.
7. the manufacture method of vertical LED as claimed in claim 1, wherein, the thickness of this metallic reflector is 100-500nm.
8. the manufacture method of vertical LED as claimed in claim 1, wherein, the thickness in this intermediate layer is 50-500nm.
9. the manufacture method of vertical LED as claimed in claim 1, wherein, this diamond accounts for the 25-60% of this composite layer cumulative volume.
10. the manufacture method of vertical LED as claimed in claim 1, wherein, this diamond accounts for the 30-50% of this composite layer cumulative volume.
The manufacture method of 11. vertical LEDs as claimed in claim 1, wherein, this metal is at least onely selected from the group be made up of Cu, Ag, Co, Ni, W, Fe, Ti, Cr and B.
The manufacture method of 12. vertical LEDs as claimed in claim 1, wherein, this diamond is synthesizing diamond abrasive particle.
The manufacture method of 13. vertical LEDs as claimed in claim 1, wherein, the particle diameter of this diamond is 1 μm of 1mm.
The manufacture method of 14. vertical LEDs as claimed in claim 1, wherein, the thickness of this composite layer is 100-500 μm.
The manufacture method of 15. vertical LEDs as claimed in claim 1, wherein, it is 210ppm/ DEG C that this composite layer has thermal coefficient of expansion.
The manufacture method of 16. vertical LEDs as claimed in claim 1, wherein, also includes one by the surface finish of this composite layer to the step of Ra < 1 μm.
The manufacture method of 17. vertical LEDs as claimed in claim 1, wherein, also includes a transparent class and bores the side that carbon-coating is formed at this semiconductor layer.
The manufacture method of 18. vertical LEDs as claimed in claim 17, wherein, it is formed with plasma chemical vapor deposition that this transparent class bores carbon-coating.
The manufacture method of 19. vertical LEDs as claimed in claim 17, wherein, this transparent class is bored carbon-coating and is included hydrogen atom in wherein.
The manufacture method of 20. vertical LEDs as claimed in claim 19, wherein, bore carbon-coating with this transparent class and all calculate, this hydrogen atom accounts for 1540at%.
21. 1 kinds of vertical LEDs, it comprises:
Semi-conductor layer, it has the compound formed with II to VI race element;
One metallic reflector, be combined with each other with this semiconductor layer;
At least one intermediate layer;
At least one class bores carbon-coating;
One composite layer; And
One first electrode layer and a second electrode lay, it is arranged at the side of this semiconductor layer and this composite layer respectively;
Wherein, this at least one intermediate layer and this at least one class bore carbon-coating is the side being mutually stacked in this metallic reflector in the mode of lamination; This composite layer comprises the composite material that at least one metal and diamond form, and this diamond is bore arrangement with the cloth of an individual layer, multilayer or random distribution in this composite layer;
Wherein, this intermediate layer comprises and is at least onely selected from the group be made up of the alloy of Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W and aforementioned metal.
22. vertical LEDs as claimed in claim 21, wherein, this semiconductor layer consist of Al
2o
3, Si, SiC, GaAs, GaP, AlP, GaN, C, hBN or C; Or at least one cation be the nitride of B, Al, Ga, In, Be, Mg, phosphide or arsenide.
23. vertical LEDs as claimed in claim 21, wherein, this metallic reflector is at least onely selected from the group be made up of Ag, Al, Ni, Co, Pd, Pt, Au, Zn, Sn, Sb, Pb, Cu, CuAg, NiAg and aforementioned metal alloy.
24. vertical LEDs as claimed in claim 21, wherein, the thickness of this metallic reflector is 100-500nm.
25. vertical LEDs as claimed in claim 21, wherein, the thickness in this intermediate layer is 50500nm.
26. vertical LEDs as claimed in claim 21, wherein, this diamond accounts for 2560% of this composite layer cumulative volume.
27. vertical LEDs as claimed in claim 21, wherein, this diamond accounts for 3050% of this composite layer cumulative volume.
28. vertical LEDs as claimed in claim 21, wherein, this metal is at least onely selected from the group be made up of Cu, Ag, Co, Ni, W, Fe, Ti, Cr and BCu, Ag, Co, Ni, W, Fe, Ti, Cr.
29. vertical LEDs as claimed in claim 21, wherein, this diamond is synthesizing diamond abrasive particle.
30. vertical LEDs as claimed in claim 21, wherein, the particle diameter of this diamond is 1 μm of 1mm.
31. vertical LEDs as claimed in claim 21, wherein, the thickness of this composite layer is 100-500um.
32. vertical LEDs as claimed in claim 21, wherein, it is 2-10ppm/ DEG C that this composite layer has thermal coefficient of expansion.
33. vertical LEDs as claimed in claim 21, wherein, the surface of this this composite layer has and is polished to Ra < 1 μm.
34. vertical LEDs as claimed in claim 21, wherein, also include a transparent class and bore carbon-coating in the side of this semiconductor layer.
35. vertical LEDs as claimed in claim 34, wherein, this transparent class is bored carbon-coating and is included hydrogen atom in wherein.
36. vertical LEDs as claimed in claim 35, wherein, bore carbon-coating with this transparent class and all calculate, this hydrogen atom accounts for 15-40at%.
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|---|---|---|---|
| TW100100357A TWI443870B (en) | 2011-01-05 | 2011-01-05 | Vertical light emitting diode and its manufacturing method |
| TW100100357 | 2011-01-05 |
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|---|---|---|---|---|
| US20070001811A1 (en) * | 2004-03-09 | 2007-01-04 | Brother Kogyo Kabushiki Kaisha | Radio-frequency identification tag communication device |
| EP1981094A2 (en) * | 2007-04-13 | 2008-10-15 | Oki Data Corporation | Semiconductor Device, Led Head and Image Forming Apparatus |
| CN101599522A (en) * | 2009-06-30 | 2009-12-09 | 厦门市三安光电科技有限公司 | A kind of vertical LED that adopts insulating medium barrier layer and preparation method thereof |
| CN102122647A (en) * | 2010-01-08 | 2011-07-13 | 精碳科技股份有限公司 | Carbon interface composite heat radiation structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20030152773A1 (en) * | 2002-02-14 | 2003-08-14 | Chrysler Gregory M. | Diamond integrated heat spreader and method of manufacturing same |
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- 2011-01-05 TW TW100100357A patent/TWI443870B/en active
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070001811A1 (en) * | 2004-03-09 | 2007-01-04 | Brother Kogyo Kabushiki Kaisha | Radio-frequency identification tag communication device |
| EP1981094A2 (en) * | 2007-04-13 | 2008-10-15 | Oki Data Corporation | Semiconductor Device, Led Head and Image Forming Apparatus |
| CN101599522A (en) * | 2009-06-30 | 2009-12-09 | 厦门市三安光电科技有限公司 | A kind of vertical LED that adopts insulating medium barrier layer and preparation method thereof |
| CN102122647A (en) * | 2010-01-08 | 2011-07-13 | 精碳科技股份有限公司 | Carbon interface composite heat radiation structure |
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| CN102593277A (en) | 2012-07-18 |
| TWI443870B (en) | 2014-07-01 |
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