CN102593259A - 制作太阳能电池的方法 - Google Patents
制作太阳能电池的方法 Download PDFInfo
- Publication number
- CN102593259A CN102593259A CN2012100631616A CN201210063161A CN102593259A CN 102593259 A CN102593259 A CN 102593259A CN 2012100631616 A CN2012100631616 A CN 2012100631616A CN 201210063161 A CN201210063161 A CN 201210063161A CN 102593259 A CN102593259 A CN 102593259A
- Authority
- CN
- China
- Prior art keywords
- semiconductor
- based end
- doping
- solar cells
- manufacturing solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 62
- 239000003292 glue Substances 0.000 claims abstract description 38
- 230000004888 barrier function Effects 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 29
- 238000007788 roughening Methods 0.000 claims description 29
- 229910045601 alloy Inorganic materials 0.000 claims description 19
- 239000000956 alloy Substances 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000002019 doping agent Substances 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000003960 organic solvent Substances 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 239000002585 base Substances 0.000 description 25
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 16
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 11
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 5
- -1 1-butoxy Chemical group 0.000 description 4
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 4
- 229920001223 polyethylene glycol Polymers 0.000 description 4
- URAYPUMNDPQOKB-UHFFFAOYSA-N triacetin Chemical compound CC(=O)OCC(OC(C)=O)COC(C)=O URAYPUMNDPQOKB-UHFFFAOYSA-N 0.000 description 4
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 3
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 229940035423 ethyl ether Drugs 0.000 description 3
- 229940043265 methyl isobutyl ketone Drugs 0.000 description 3
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 3
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 3
- ULWHHBHJGPPBCO-UHFFFAOYSA-N propane-1,1-diol Chemical class CCC(O)O ULWHHBHJGPPBCO-UHFFFAOYSA-N 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- DHKHKXVYLBGOIT-UHFFFAOYSA-N 1,1-Diethoxyethane Chemical compound CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 2
- BGJSXRVXTHVRSN-UHFFFAOYSA-N 1,3,5-trioxane Chemical compound C1OCOCO1 BGJSXRVXTHVRSN-UHFFFAOYSA-N 0.000 description 2
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 2
- CNJRPYFBORAQAU-UHFFFAOYSA-N 1-ethoxy-2-(2-methoxyethoxy)ethane Chemical compound CCOCCOCCOC CNJRPYFBORAQAU-UHFFFAOYSA-N 0.000 description 2
- KMZHZAAOEWVPSE-UHFFFAOYSA-N 2,3-dihydroxypropyl acetate Chemical compound CC(=O)OCC(O)CO KMZHZAAOEWVPSE-UHFFFAOYSA-N 0.000 description 2
- OJVAMHKKJGICOG-UHFFFAOYSA-N 2,5-hexanedione Chemical compound CC(=O)CCC(C)=O OJVAMHKKJGICOG-UHFFFAOYSA-N 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 2
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 2
- JTXMVXSTHSMVQF-UHFFFAOYSA-N 2-acetyloxyethyl acetate Chemical compound CC(=O)OCCOC(C)=O JTXMVXSTHSMVQF-UHFFFAOYSA-N 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- UXDDRFCJKNROTO-UHFFFAOYSA-N Glycerol 1,2-diacetate Chemical compound CC(=O)OCC(CO)OC(C)=O UXDDRFCJKNROTO-UHFFFAOYSA-N 0.000 description 2
- PCSMJKASWLYICJ-UHFFFAOYSA-N Succinic aldehyde Chemical compound O=CCCC=O PCSMJKASWLYICJ-UHFFFAOYSA-N 0.000 description 2
- 239000002518 antifoaming agent Substances 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- NKDDWNXOKDWJAK-UHFFFAOYSA-N dimethoxymethane Chemical compound COCOC NKDDWNXOKDWJAK-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- 229960000587 glutaral Drugs 0.000 description 2
- 235000011187 glycerol Nutrition 0.000 description 2
- 239000001087 glyceryl triacetate Substances 0.000 description 2
- 235000013773 glyceryl triacetate Nutrition 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229940051250 hexylene glycol Drugs 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920001451 polypropylene glycol Polymers 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- YPFDHNVEDLHUCE-UHFFFAOYSA-N propane-1,3-diol Chemical compound OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 2
- 239000002562 thickening agent Substances 0.000 description 2
- 239000013008 thixotropic agent Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229960002622 triacetin Drugs 0.000 description 2
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 2
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000000080 wetting agent Substances 0.000 description 2
- FZTLLUYFWAOGGB-UHFFFAOYSA-N 1,4-dioxane dioxane Chemical compound C1COCCO1.C1COCCO1 FZTLLUYFWAOGGB-UHFFFAOYSA-N 0.000 description 1
- WDVBMXJLYFINLX-UHFFFAOYSA-N 1-(1-butoxyethoxy)propan-1-ol Chemical compound CCCCOC(C)OC(O)CC WDVBMXJLYFINLX-UHFFFAOYSA-N 0.000 description 1
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 description 1
- RPUJTMFKJTXSHW-UHFFFAOYSA-N 1-(methoxymethoxy)ethanol Chemical compound COCOC(C)O RPUJTMFKJTXSHW-UHFFFAOYSA-N 0.000 description 1
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- XXXFZKQPYACQLD-UHFFFAOYSA-N 2-(2-hydroxyethoxy)ethyl acetate Chemical compound CC(=O)OCCOCCO XXXFZKQPYACQLD-UHFFFAOYSA-N 0.000 description 1
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 description 1
- UMSDWPUVTKDLDE-UHFFFAOYSA-N 2-ethynyl-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)C#C UMSDWPUVTKDLDE-UHFFFAOYSA-N 0.000 description 1
- HXDLWJWIAHWIKI-UHFFFAOYSA-N 2-hydroxyethyl acetate Chemical compound CC(=O)OCCO HXDLWJWIAHWIKI-UHFFFAOYSA-N 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- FERIUCNNQQJTOY-UHFFFAOYSA-M Butyrate Chemical compound CCCC([O-])=O FERIUCNNQQJTOY-UHFFFAOYSA-M 0.000 description 1
- 239000004348 Glyceryl diacetate Substances 0.000 description 1
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical class OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- LTOATULEBMBWSO-UHFFFAOYSA-N acetic acid;2-ethoxyethanol Chemical compound CC(O)=O.CCOCCO LTOATULEBMBWSO-UHFFFAOYSA-N 0.000 description 1
- ACOGMWBDRJJKNB-UHFFFAOYSA-N acetic acid;ethene Chemical compound C=C.CC(O)=O ACOGMWBDRJJKNB-UHFFFAOYSA-N 0.000 description 1
- NQOUCSFLANJZBW-UHFFFAOYSA-N acetic acid;methyl formate Chemical compound COC=O.CC(O)=O NQOUCSFLANJZBW-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- LKTZODAHLMBGLG-UHFFFAOYSA-N alumanylidynesilicon;$l^{2}-alumanylidenesilylidenealuminum Chemical compound [Si]#[Al].[Si]#[Al].[Al]=[Si]=[Al] LKTZODAHLMBGLG-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- HTRXGEPDTFSKLI-UHFFFAOYSA-N butanoic acid;ethyl acetate Chemical compound CCCC(O)=O.CCOC(C)=O HTRXGEPDTFSKLI-UHFFFAOYSA-N 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- HVHDXEBXZOWTMV-UHFFFAOYSA-N ethyl formate propanoic acid Chemical compound C(C)C(=O)O.C(=O)OCC HVHDXEBXZOWTMV-UHFFFAOYSA-N 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 235000019443 glyceryl diacetate Nutrition 0.000 description 1
- MWVFCEVNXHTDNF-UHFFFAOYSA-N hexane-2,3-dione Chemical group CCCC(=O)C(C)=O MWVFCEVNXHTDNF-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- RCYSGAYIEFAJTG-UHFFFAOYSA-N methyl acetate;propanoic acid Chemical compound CCC(O)=O.COC(C)=O RCYSGAYIEFAJTG-UHFFFAOYSA-N 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 229960005323 phenoxyethanol Drugs 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- CIBMHJPPKCXONB-UHFFFAOYSA-N propane-2,2-diol Chemical compound CC(C)(O)O CIBMHJPPKCXONB-UHFFFAOYSA-N 0.000 description 1
- 125000001501 propionyl group Chemical group O=C([*])C([H])([H])C([H])([H])[H] 0.000 description 1
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Energy (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明提供一种制作太阳能电池的方法,包括利用掺杂胶于半导体基底的第一表面形成选择性射极,并藉由掺杂胶的屏障使选择性射极具有非粗糙化表面,以及利用粗糙化阻障层使半导体基底的第二表面具有非粗糙化表面。
Description
技术领域
本发明是涉及一种制作太阳能电池的方法,尤指一种利用掺杂胶于半导体基底的正面(第一表面)形成具有非粗糙化表面的选择性射极,以及利用粗糙化阻障层使半导体基底的背面(第二表面)具有非粗糙化表面的太阳能电池的制作方法。
背景技术
由于地球石油资源有限,因此近年来对于替代能源的需求与日俱增。在各式替代能源中,太阳能由于能够藉由自然界的循环而源源不绝,已成为目前最具发展潜力的绿色能源。
受限于高制作成本、制程复杂与光电转换效率不佳等问题,太阳能的发展仍待进一步的突破。因此,如何制作出低制作成本、具简化制程与高光电转换效率的太阳能电池,而使太阳能取代现行高污染与高风险的能源实为当前能产业最主要的发展方向之一。
发明内容
本发明的目的之一在于提供一种制作太阳能电池的方法,以简化制程以节省制作成本,并提升太阳能电池的光电转换效率。
本发明的一较佳实施例提供一种制作太阳能电池的方法,包括下列步骤。提供一半导体基底,其中半导体基底包括一第一表面与一第二表面,且第一表面具有一选择性射极区域。于半导体基底的选择性射极区域内的第一表面上形成一掺杂胶,且掺杂胶包括一掺杂剂、一耐高温材料及一有机溶剂。于半导体基底的第二表面形成一粗糙化阻障层。对半导体基底进行一粗糙化处理,以使位于选择性射极区域外未被掺杂胶覆盖的半导体基底的第一表面形成一粗糙化表面,并使半导体基底的第二表面于粗糙化处理的后具有一平坦表面。进行一扩散制程,以使位于选择性射极区域内的掺杂胶的掺杂剂向下方扩散至第一表面内而形成具有重掺杂的一选择性射极,以及于扩散制程中通入一掺杂气体以于位于选择性射极区域外的第一表面形成一轻掺杂区,其中选择性射极与轻掺杂区具有一第一掺杂类型。移除掺杂胶与粗糙化阻障层。于半导体基底的第一表面上形成一抗反射层。于选择性射极区域内的选择性射极上形成一第一电极。于半导体基底的第二表面形成一掺杂区,其中掺杂区具有一第二掺杂类型,且第一掺杂类型的极性不同于第二掺杂类型的极性。于半导体基底的第二表面上形成一第二电极。
本发明的制作太阳能电池的方法具有制程简化与低制作成本的优点。
附图说明
图1至图8绘示了本发明的一较佳实施例的制作太阳能电池的方法示意图;
图9与图10绘示了本发明的另一较佳实施例的制作太阳能电池的方法示意图;
其中,主要元件符号说明:
1 太阳能电池 10 半导体基底
101 第一表面 102 第二表面
10S 选择性射极区域 12 掺杂胶
14 粗糙化阻障层 16 选择性射极
18 轻掺杂区 20 抗反射层
22 第一电极 23 金属层
24 第二电极 25 掺杂区
2 太阳能电池 26 掺杂区
具体实施方式
为使熟习本发明所属技术领域的一般技艺者能更进一步了解本发明,下文特列举本发明的较佳实施例,并配合所附附图,详细说明本发明的构成内容及所欲达成的功效。
请参考图1至图8。图1至图8绘示了本发明的一较佳实施例的制作太阳能电池的方法示意图。如图1所示,首先提供一半导体基底10。半导体基底10可为硅基底例如单晶硅基底、多晶硅基底、微晶硅基底或纳米晶硅基底,但不以此为限而可为其它各种类型的半导体基底。半导体基底10具有一第一表面101与一第二表面102,且第一表面101具有一选择性射极(selective emitter)区域10S,用以容置于后续制程中形成的选择性射极。在本实施例中,第一表面101为太阳能电池的正面(入光面),而第二表面102为太阳能电池的背面。
如图2所示,于半导体基底10的选择性射极区域10S内的第一表面101上形成一掺杂胶(doping paste)12。掺杂胶12可为单层或多层结构,且其包括至少一掺杂剂(doping agent)、至少一耐高温材料及至少一有机溶剂。在本实施例中,掺杂剂可包括n型掺杂物或p型掺杂物,其中n型掺杂物可为例如磷、砷、锑或上述材料的化合物,而p型掺杂物可为例如硼或硼化合物,但不以此为限。耐高温材料可包含例如氧化硅、氮氧化硅、氮化硅、金属氧化物(例如:氧化钛(TiO2)、氧化镁(MgO)、氧化钙(CaO)、氧化铝(Al2O3)、氧化锆(ZrO)、氧化铟锡(ITO)、氧化锌(ZnO)等等)、或其它材料、或前述的至少二种材料的混合物,但不以此为限。此外,耐高温材料较佳亦可具有耐酸性或/及耐碱性,藉此可避免掺杂胶12在后续制程中受到酸或碱的侵蚀而受损。举例而言,当耐高温材料中的氧化硅的含量实质上大于93%时,其具有在高温下能抵抗酸的侵蚀而易于与碱反应的特性。当耐高温材料的主要成分为氧化镁,或氧化镁与氧化钙的混合物时,其具有在高温下能抵抗碱的侵蚀的特性。当耐高温材料的主要成分为氧化硅与氧化铝时,依据氧化铝的含量不同,可区分为三类:第一类:半硅质(氧化铝的含量大体上介于15%-30%)、第二类:粘土质(氧化铝的含量大体上介于30%-48%)、与第三类:高铝质(氧化铝的含量大体上大于48%)。在选用掺杂胶的耐高温材料时,可依据耐高温特性、抗酸性与抗碱性的需要选用不同的材料并调整其比例。另外,掺杂胶的有机溶剂例如可选自下列溶剂的至少一种:乙二醇(ethylene glycol)、乙二醇单丁醚(ethylene glycol monobutylether)、乙二醇单苯基醚(ethylene glycol monophenyl ether)、双甲氧基乙醇(methoxymethoxyethanol)、乙二醇一乙酸酯(ethylene glycol monoacetate)、乙二醇二乙酸酯(ethylene glycol diacetate)、二乙二醇(diethylene glycol)、二乙二醇单甲基醚(diethylene glycol monomethyl ether)、乙二醇乙醚醋酸(diethyleneglycol monoethyl ether acetate)、二乙二醇单丁醚(diethylene glycol monobutylether)、二乙二醇单丁基醚乙酸酯(diethylene glycol monobutyl ether acetate)、二乙二醇二甲醚(diethylene glycol dimethyl ether)、二乙二醇甲基乙基醚(diethylene glycol methylethyl ether)、二乙二醇二乙醚(diethylene glycol diethylether)、二乙二醇乙酯(diethylene glycol acetate)、三乙二醇(triethylglycol)、三乙二醇单甲醚(triethylene glycol monomethyl ether)、三乙二醇单乙基醚(triethyleneglycol monoethyl ether)、四乙二醇(tetraethylene glycol)、聚乙二醇(polyethyleneglycols)、丙二醇(propylene glycol)、丙二醇甲醚(propylene glycol monomethylether)、丙二醇单乙基醚(propylene glycol monoethyl ether)、二乙醇单丁醚(propylene glycol monobutyl ether)、1-丁氧基乙氧基丙醇(1-butoxyethoxypropanol)、二丙二醇(dipropylglycol)、丙二醇甲醚(dipropyleneglycol monomethyl ether)、二丙二醇单乙基醚(dipropylene glycol monoethylether)、三丙二醇单甲醚(tripropylene glycol monomethyl ether)、聚氧化丙烯二醇(polypropylene glycols)、丙二醇(trimethylene glycol)、丁二醛(butanedial)、1,5-戊二醛(1,5-pentanedial)、己二醇(hexylene glycol)、甘油(glycerine)、乙酸甘油酯(glyceryl acetate)、甘油二乙酸酯(glyceryl diacetate)、三乙酸甘油酯(glyceryltriacetate)、三羟甲基丙炔(trimethylolpropyne)、1,2,6-haxanetriol、二氧六环dioxane、三聚甲醛(trioxane)、四氢呋喃(tetrahydrofuran)、四氢吡喃(tetrahydropyran)、甲醛缩二甲醇(methylal)、二乙基乙缩醛(diethylacetal)、甲基乙基酮(methyl ethyl ketone)、甲基异丁基酮(methyl isobutyl ketone)、二乙基酮(diethyl ketone)、己二酮(acetonylacetone)、二丙酮醇(diacetone alcohol)、甲酸甲酯(methyl formate)、甲酸乙酯(ethyl formate)、丙基甲酯(propyl formate)、乙酸甲酯(methyl acetate),以及乙酸乙酯(ethyl acetate)。另外,掺杂胶亦可视其它需要选择性地加入具有特定功能的添加剂,例如消泡剂(antifoaming agent)、粘着力调整剂(adhesion moderator)、整平剂(leveling agent)、触变剂(thixotropicagent)、稠化剂(thickening agent)或润湿剂(wetting agent)等,或是选择性地加入水或酸。
此外,如图2所示,于半导体基底10的第二表面102形成一粗糙化阻障层14,用以避免第二表面102于后续粗糙化处理之后产生粗糙化表面。在本实施例中,较佳地,粗糙化阻障层14可为单层或多层结构,且其成分可与掺杂胶12类似,其差别在于粗糙化阻障层14未包括掺杂剂的成分,而可包括耐高温材料与有机溶剂。此时,粗糙化阻障层14与掺杂胶12可于下列图5所示一起被移除。粗糙化阻障层14所包括的耐高温材料及有机溶剂可与掺杂胶12所包括的耐高温材料及有机溶剂相同,但不以此为限。于其它实施例中,粗糙化阻障层14可选用无机材料(例如:氧化硅、氮化硅、氮氧化硅或其它合适的材料)或有机材料(例如:高分子硅聚合物、聚碳酸酯类、聚对苯二甲酸酯类、聚丙酰酸酯类、或上述的衍生物、或其它合适的材料),但可能在下列图5所示的步骤中,需要至少一次的蚀刻制程,才可将粗糙化阻障层14移除干净。另外,掺杂胶12与粗糙化阻障层14的形成顺序较佳为先于半导体基底10的第二表面102先形成粗糙化阻障层14,再于第一表面101形成掺杂胶12,藉此较不易造成第一表面101的损伤,但不以此为限。例如,在其它考虑下,亦可先于半导体基底10的第一表面101形成掺杂胶12,再于第二表面102形成粗糙化阻障层14。此外,在本实施例中,掺杂胶12与粗糙化阻障层14可分别利用一印刷制程分别形成于半导体基底10的第一表面101与第二表面102,但并以此为限而亦可利用其它成膜方式加以形成,例如:喷墨方式、网版方式等等。
如图3所示,接着对半导体基底10进行一粗糙化(texturing)处理,以使位于选择性射极区域10S外未被掺杂胶12覆盖的半导体基底10的第一表面101形成一粗糙化表面。由于,半导体基底10的第二表面102覆盖有粗糙化阻障层14,可以让第二表面102不被粗糙化处理所影响,而使半导体基底10的第二表面102形成一平坦表面(非粗糙化表面)。在本实施例中,粗糙化处理可为一干蚀刻制程例如一等离子体蚀刻制程,在此状况下由于半导体基底10的第一表面101的选择性射极区域10S上覆盖有掺杂胶12,且第二表面102覆盖有粗糙化阻障层14,因此于粗糙化处理仅会使位于选择性射极区域10S外未被掺杂胶12覆盖的半导体基底10的第一表面101会形成一粗糙化表面,而位于选择性射极区域10S内的第一表面101与第二表面102仍会具有一平坦表面。粗糙化处理并不限定为干蚀刻制程,亦可为湿蚀刻制程,例如使用碱性蚀刻液(例如:氢氧化纳(NaOH)与异丙醇(isopropyl alcohol,IPA))或酸性蚀刻液(例如:氢氟酸与其它溶剂)的溶液进行湿蚀刻制程。本发明于选择性射极区域10S内的第一表面101以及第二表面102形成非粗糙化表面的作法可保护选择性射极区域10S的半导体基板10的第一表面101以及第二表面102免于在粗糙化制程中受到损伤,而可抑止接触电阻(contact resistance)的升高。此外,非粗糙化表面更可增加第二表面102的光线的反射,而可提升太阳能电池的短路电流增益(Isc gain)。
如图4所示,接着进行一扩散制程,以使位于选择性射极区域10S内的掺杂胶12的掺杂剂向下方扩散至第一表面101内而形成具有重掺杂的一选择性射极16(或称为重掺杂区),且在扩散制程中通入一掺杂气体以于位于选择性射极区域10S外的第一表面101形成一轻掺杂区18。扩散制程的制程温度大体上较佳可大于800℃,但不以此为限。选择性射极16可降低阻抗,因此可有效提高太阳能电池的开路电压(Voc)与填充系数(fill factor,FF),而轻掺杂区18则可提升光电转换效率。值得说明的是选择性射极16与轻掺杂区18具有一第一掺杂类型。举例而言,若第一掺杂类型为n型,则扩散制程中所使用的掺杂气体可包括含n型掺杂物的气体例如三氯氧磷(POCl3),而掺杂剂可使用n型掺杂物,藉此选择性射极16可具有重度n型掺杂物掺杂,而轻掺杂区18则可具有轻度n型掺杂物掺杂。若第一掺杂类型为p型,则扩散制程中所使用的掺杂气体可包括含p型掺杂物的气体,而掺杂剂可使用p型掺杂物,藉此选择性射极16可具有重度p型掺杂物掺杂,而轻掺杂区18则可具有轻度p型掺杂物掺杂。另外,半导体基底10的掺杂类型则可视太阳能电池的需要加以选择。例如,半导体基底10可具有第二掺杂类型,且第二掺杂类型的极性不同于第一掺杂类型的极性。举例而言,选择性射极16与轻掺杂区18具有n掺杂类型,则半导体基底10可具有p型掺杂类型,反之亦然。然而,半导体基底10亦可与选择性射极16以及轻掺杂区18具有相同的第一掺杂类型。举例而言,半导体基底10、选择性射极16与轻掺杂区18可同样具有n掺杂类型或是p型掺杂类型。
如图5所示,移除掺杂胶12与粗糙化阻障层14。掺杂胶12与粗糙化阻障层14可利用一湿式制程同时加以移除,例如可使用一氢氟酸溶液同时移除位于第一表面101的掺杂胶12,以及位于第二表面的粗糙化阻障层14,但不以此为限。例如,亦可使用一干式制程,或是混合使用一湿式制程与一湿式制程。随后如图6所示,于半导体基底10的第一表面101上形成一抗反射层20。在本实施例中,抗反射层20是以共形(conformal)方式形成于半导体基板10的第一表面101上,因此抗反射层20在选择性射极区域10S外会有粗糙化表面,而在选择性射极区域10S内则具有非粗糙化表面。抗反射层20可增加太阳能电池的入光量,进而提升光利用率。抗反射层20可为单层或多层结构,且其材料可为例如氮化硅、氧化硅或氮氧化硅、或其它合适的材料,并可利用例如一等离子体增强化学气相沉积(PECVD)制程形成,但不以此为限。
接着进行于第一表面101形成第一电极22,以及于第二表面102形成掺杂区25与第二电极24的步骤。如图7所示,随后于选择性射极区域10S内的选择性射极16上形成一第一电极22。第一电极22可为单层或多层结构且是作为太阳能电池的指状(finger)电极,而其材料可为高导电性材料,例如银(Ag),但不以此为限而可为其它高导电性材料,例如:金、铜等等。此外,于半导体基底10的第二表面102更先形成一金属层23,以及于半导体基底10的第二表面102上形成一第二电极24。在本实施例中,金属层23可为一单层或多层结构的软性金属层,其材料可为例如铅(Pb)、锡(Sn)、锑(Sn)、铝(Al)或上述的合金,且较佳为铝或铝合金,但不以此为限。第二电极24可为单层或多层结构且是作为太阳能电池的背电极,而其材料可为高导电性材料,例如银,但不以此为限而可为其它高导电性材料,例如:金、铜等等。第一电极22、金属层23与第二电极24的形成顺序并不限定,且其较佳地可分别利用印刷制程加以形成,但不以此为限。第一电极22、金属层23与第二电极24的形成亦可利用例如:沉积方式、喷墨方式、网版方式等。
如图8所示,进行一烧结(sintering)制程,以使第一电极22与选择性射极16连接,并利用烧结制程使金属层23与半导体基底10形成由金属硅化物(metal silicide)所构成的一掺杂区25,作为太阳能电池的背表面电极场(backsurface field,BSF),即制作出本实施例的太阳能电池1。在本实施例中,当金属层23的材料选用铝或铝合金为范例时,则形成的掺杂区25会由铝硅化物所构成。此外,掺杂区25必须具有第二掺杂类型,也就是说,掺杂区25的掺杂类型必须与选择性射极16以及轻掺杂区18的掺杂类型相反。例如,若选择性射极16以及轻掺杂区18为n型掺杂类型,则掺杂区25需为p型掺杂类型;反之若选择性射极16以及轻掺杂区18为p型掺杂类型,则掺杂区25需为n型掺杂类型。至于半导体基底10的掺杂类型则不限,而可视太阳能电池的设计而与选择性射极16以及轻掺杂区18实质上相同,或是与掺杂区24实质上相同。
本发明的制作太阳能电池的方法并不以上述实施例为限。下文将依序介绍本发明的其它较佳实施例的制作太阳能电池的方法,且为了便于比较各实施例的相异处并简化说明,在下文的实施例中使用相同的符号标注相同的元件,且主要针对各实施例的相异处进行说明,而不再对重复部分进行赘述。
请参考图9与图10,并一并参考图1至图6。图9与图10绘示了本发明的另一较佳实施例的制作太阳能电池的方法示意图。本实施例的制作太阳能电池的方法与前述实施例的主要差异在于形成掺杂区的步骤。本实施例的制作太阳能电池的方法是接续图6的方法后进行。如图9所示,进行另一扩散制程,通入至少一掺杂气体以于第二表面102形成一具有第二掺杂类型的掺杂区26。若第二掺杂类型为n型,则扩散制程中所使用的掺杂气体可包括含n型掺杂物的气体,若第二掺杂类型为p型,则扩散制程中所使用的掺杂气体可包括含p型掺杂物的气体。由上述可知,本实施例的制作太阳能电池的方法是利用扩散制程直接于第二表面102形成掺杂区26,而不同于前述实施例利用一金属层形成掺杂区的作法。
如图10所示,于选择性射极区域10S内的选择性射极16上形成一第一电极22,以于半导体基底10的第二表面102上形成一第二电极24。最后,再进行一烧结制程,以使第一电极22与选择性射极16连接,即制作出本实施例的太阳能电池2。
综上所述,本发明的方法仅于半导体基底的第一表面的轻掺杂区形成粗糙化表面,藉此可增加入光量而提升光利用率,而于第一表面的选择性射极区域与第二表面形成非粗糙化表面,藉此可避免半导体基底受损而使得阻值得以降低,并增加第二表面的光线的反射,而可提升太阳能电池的短路电流增益。此外,本发明的掺杂胶具有形成选择性射极与避免选择性射极区域于粗糙化处理中形成粗糙化表面的双重作用,而粗糙化阻障层则具有避免第二表面于粗糙化处理中形成粗糙化表面的作用,且掺杂胶与粗糙化阻障层均可利用印刷制程加以形成,并可利用湿式制程轻易加以一并移除,因此本发明的制作太阳能电池的方法具有制程简化与低制作成本的优点。
以上所述仅为本发明的较佳实施例,凡依本发明申请专利范围所做的均等变化与修饰,皆应属本发明的涵盖范围。
Claims (13)
1.一种制作太阳能电池的方法,包括:
提供一半导体基底,其中所述半导体基底包括一第一表面与一第二表面,且该第一表面具有一选择性射极区域;
于所述半导体基底的选择性射极区域内的第一表面上形成一掺杂胶,且所述掺杂胶包括一掺杂剂、一耐高温材料及一有机溶剂;
于所述半导体基底的第二表面形成一粗糙化阻障层;
对所述半导体基底进行一粗糙化处理,以使位于选择性射极区域外未被掺杂胶覆盖的半导体基底的第一表面形成一粗糙化表面,并使半导体基底的第二表面于粗糙化处理之后具有一平坦表面;
进行一扩散制程,以使位于选择性射极区域内的掺杂胶的掺杂剂向下方扩散至第一表面内而形成具有重掺杂的一选择性射极,以及于该扩散制程中通入一掺杂气体以于位于选择性射极区域外的第一表面形成一轻掺杂区,其中所述选择性射极与所述轻掺杂区具有一第一掺杂类型;
移除所述掺杂胶与所述粗糙化阻障层;
于所述半导体基底的第一表面上形成一抗反射层;
于所述选择性射极区域内的选择性射极上形成一第一电极;
于所述半导体基底的第二表面形成一掺杂区,其中该掺杂区具有一第二掺杂类型,且所述第一掺杂类型的极性不同于所述第二掺杂类型的极性;
以及
于所述半导体基底的第二表面上形成一第二电极。
2.如权利要求1所述的制作太阳能电池的方法,其中所述掺杂剂包括n型掺杂物或p型掺杂物。
3.如权利要求1所述的制作太阳能电池的方法,其中所述耐高温材料的成分为氧化硅、氮氧化硅、金属氧化物、氮化硅、或上述至少二种的混合物。
4.如权利要求1所述的制作太阳能电池的方法,其中位于所述选择性射极区域内的抗反射层具有一平坦表面,且位于所述选择性射极区域外的抗反射层具有一粗糙化表面。
5.如权利要求1所述的制作太阳能电池的方法,其中所述粗糙化阻障层与所述掺杂胶是分别利用一印刷制程形成,且所述粗糙化阻障层与所述掺杂胶是利用一蚀刻制程加以移除。
6.如权利要求1所述的制作太阳能电池的方法,其中所述半导体基底具有第一掺杂类型。
7.如权利要求1所述的制作太阳能电池的方法,其中所述半导体基底具有第二掺杂类型。
8.如权利要求1所述的制作太阳能电池的方法,其中所述第一电极与第二电极是分别以一印刷制程形成于所述半导体基底的第一表面与第二表面。
9.如权利要求1所述的制作太阳能电池的方法,另包括于形成第一电极之后,进行一烧结制程,以使所述第一电极与所述选择性射极连接。
10.如权利要求9所述的制作太阳能电池的方法,其中于所述半导体基底的第二表面形成掺杂区的步骤包括:
于所述半导体基底的第二表面形成一金属层;以及
利用所述烧结制程使所述金属层与所述半导体基底形成由金属硅化物所构成的掺杂区。
11.如权利要求10所述的制作太阳能电池的方法,其中所述金属层为一软性金属层。
12.如权利要求1所述的制作太阳能电池的方法,其中于所述半导体基底的第二表面形成掺杂区的步骤包括通入另一掺杂气体进行另一扩散制程。
13.如权利要求1所述的制作太阳能电池的方法,其中所述粗糙化阻障层不包含所述掺杂剂。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW100144000A TWI424584B (zh) | 2011-11-30 | 2011-11-30 | 製作太陽能電池之方法 |
TW100144000 | 2011-11-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102593259A true CN102593259A (zh) | 2012-07-18 |
CN102593259B CN102593259B (zh) | 2014-11-05 |
Family
ID=45936950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210063161.6A Active CN102593259B (zh) | 2011-11-30 | 2012-03-08 | 制作太阳能电池的方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8334163B1 (zh) |
EP (1) | EP2600407A1 (zh) |
CN (1) | CN102593259B (zh) |
TW (1) | TWI424584B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2398071B1 (en) * | 2010-06-17 | 2013-01-16 | Imec | Method for forming a doped region in a semiconductor layer of a substrate and use of such method |
JP6279878B2 (ja) * | 2013-10-31 | 2018-02-14 | 東京応化工業株式会社 | 太陽電池の製造方法 |
CN104103715B (zh) * | 2014-06-30 | 2016-08-24 | 浙江晶科能源有限公司 | 一种双层结构ito电极晶体硅太阳能电池的制备方法 |
CN115050852B (zh) * | 2022-06-08 | 2024-04-30 | 宁夏隆基乐叶科技有限公司 | 一种太阳能电池及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1241298A (zh) * | 1996-12-24 | 2000-01-12 | 依麦克Vzw | 具有选择性扩散区的半导体器件 |
EP1876650A1 (en) * | 2005-04-26 | 2008-01-09 | Shin-Etsu Handotai Co., Ltd | Solar cell manufacturing method and solar cell |
EP2197036A1 (en) * | 2007-09-19 | 2010-06-16 | Sharp Kabushiki Kaisha | Method for manufacturing solar cell |
WO2010068331A1 (en) * | 2008-12-10 | 2010-06-17 | Applied Materials, Inc. | Enhanced vision system for screen printing pattern alignment |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6552414B1 (en) * | 1996-12-24 | 2003-04-22 | Imec Vzw | Semiconductor device with selectively diffused regions |
DE19910816A1 (de) * | 1999-03-11 | 2000-10-05 | Merck Patent Gmbh | Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern |
JP4481869B2 (ja) | 2005-04-26 | 2010-06-16 | 信越半導体株式会社 | 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法 |
JP5277485B2 (ja) * | 2007-12-13 | 2013-08-28 | シャープ株式会社 | 太陽電池の製造方法 |
KR101631711B1 (ko) | 2008-03-21 | 2016-06-17 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 확산용 인 페이스트 및 그것을 이용한 태양 전지의 제조 방법 |
WO2009133607A1 (ja) * | 2008-04-30 | 2009-11-05 | 三菱電機株式会社 | 光起電力装置およびその製造方法 |
US20120100666A1 (en) * | 2008-12-10 | 2012-04-26 | Applied Materials Italia S.R.L. | Photoluminescence image for alignment of selective-emitter diffusions |
IT1394647B1 (it) * | 2009-06-22 | 2012-07-05 | Applied Materials Inc | Sistema di visione migliorato per l'allineamento di uno schema di stampa serigrafica |
KR101145928B1 (ko) * | 2009-03-11 | 2012-05-15 | 엘지전자 주식회사 | 태양 전지 및 태양 전지의 제조 방법 |
US8187979B2 (en) * | 2009-12-23 | 2012-05-29 | Varian Semiconductor Equipment Associates, Inc. | Workpiece patterning with plasma sheath modulation |
KR20120019006A (ko) * | 2010-08-24 | 2012-03-06 | 삼성전자주식회사 | 도핑 페이스트, 태양 전지 및 그 제조 방법 |
-
2011
- 2011-11-30 TW TW100144000A patent/TWI424584B/zh active
-
2012
- 2012-03-08 CN CN201210063161.6A patent/CN102593259B/zh active Active
- 2012-03-28 EP EP12161652.8A patent/EP2600407A1/en not_active Withdrawn
- 2012-04-05 US US13/439,879 patent/US8334163B1/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1241298A (zh) * | 1996-12-24 | 2000-01-12 | 依麦克Vzw | 具有选择性扩散区的半导体器件 |
EP1876650A1 (en) * | 2005-04-26 | 2008-01-09 | Shin-Etsu Handotai Co., Ltd | Solar cell manufacturing method and solar cell |
EP2197036A1 (en) * | 2007-09-19 | 2010-06-16 | Sharp Kabushiki Kaisha | Method for manufacturing solar cell |
WO2010068331A1 (en) * | 2008-12-10 | 2010-06-17 | Applied Materials, Inc. | Enhanced vision system for screen printing pattern alignment |
Also Published As
Publication number | Publication date |
---|---|
US8334163B1 (en) | 2012-12-18 |
TW201322473A (zh) | 2013-06-01 |
EP2600407A1 (en) | 2013-06-05 |
CN102593259B (zh) | 2014-11-05 |
TWI424584B (zh) | 2014-01-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI535044B (zh) | 太陽能電池元件及其製造方法 | |
CN104966761B (zh) | 一种晶体硅太阳能电池的制造方法 | |
US9583653B2 (en) | Solar cell and fabrication method thereof | |
CN102468365B (zh) | 双面太阳能电池的制造方法 | |
KR101139456B1 (ko) | 백 컨택 태양전지 및 그 제조방법 | |
CN102856328A (zh) | 太阳能电池及其制作方法 | |
CN102800716B (zh) | 太阳能电池及其制作方法 | |
JP4684056B2 (ja) | 太陽電池の製造方法 | |
JP2013511839A (ja) | 光起電力セルの製造方法、それによって製造された光起電力セル、およびその用途 | |
CN102593259B (zh) | 制作太阳能电池的方法 | |
CN102969399A (zh) | Mwt太阳能电池及其制作方法 | |
CN102916087B (zh) | 太阳能电池及其制作方法 | |
CN112397596A (zh) | 一种低成本的高效太阳能电池及其制备方法 | |
CN103474506A (zh) | 双面受光太阳电池制作方法 | |
CN103367539B (zh) | Ibc太阳能电池的制作方法及ibc太阳能电池 | |
CN103367540A (zh) | 背钝化太阳能电池及其制作方法 | |
CN101471389B (zh) | 太阳能电池 | |
KR101165915B1 (ko) | 태양전지의 제조방법 | |
US8338217B2 (en) | Method of fabricating a solar cell | |
US20140166094A1 (en) | Solar cell emitter region fabrication using etch resistant film | |
CN106104814A (zh) | 用于生产具有同时回蚀刻的掺杂区的太阳能电池的方法 | |
Raval et al. | Industrial silicon solar cells | |
KR101323199B1 (ko) | 태양전지용 전극 페이스트 및 이를 이용한 태양전지 제조방법 | |
CN104112795A (zh) | 一种硅异质结太阳能电池的制作方法 | |
CN102024869A (zh) | 太阳能电池的制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |