CN102592700A - Composite silver wire - Google Patents

Composite silver wire Download PDF

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Publication number
CN102592700A
CN102592700A CN2011104315986A CN201110431598A CN102592700A CN 102592700 A CN102592700 A CN 102592700A CN 2011104315986 A CN2011104315986 A CN 2011104315986A CN 201110431598 A CN201110431598 A CN 201110431598A CN 102592700 A CN102592700 A CN 102592700A
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colored line
silver
gold
content
palladium
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CN2011104315986A
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CN102592700B (en
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洪飞义
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Solar Applied Material Technology Corp
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Profound Material Technology Co ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/43Manufacturing methods
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/06Alloys based on silver
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • H01L2224/438Post-treatment of the connector
    • H01L2224/43848Thermal treatments, e.g. annealing, controlled cooling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Conductive Materials (AREA)
  • Powder Metallurgy (AREA)

Abstract

A composite silver wire comprises gold, palladium and silver, wherein the content of gold is more than or equal to 4 wt% and less than 8 wt%, and the content of palladium is between 2 wt% and 4 wt%. Therefore, the whole body has the effects of good operability, good high-temperature and high-humidity resistance, low manufacturing process cost and the like.

Description

Compound silver-colored line
Technical field
The present invention relates to a kind of compound silver-colored line, particularly relate to a kind of as the compound silver-colored line of semiconductor packing process with connecting line.
Background technology
In the encapsulation procedure of semiconductor element; Routing engages the lead that uses; Be divided into gold thread, copper cash and aluminum steel, because gold thread has excellent physical property, as stability is high, matter is soft, ductility is good, conductivity is good; Performances such as its yield, production efficiency and line footpath miniaturization are also all pretty good, so be main routing joining technique to use gold thread still at present.
Yet,, consider in order to save material cost because the cost of gold thread is very high; The semiconductor dealer replaces gold thread with plating palladium copper cash widely, not only can save about seventy percent material cost, and the reliability (like high-temp resisting high-humidity resisting ability) of plating palladium copper cash when being used also can meet the requirements; But; But higher because of the hardness of plating palladium copper cash, produced poor, the yield problem of lower of operation property (production capacity), so concerning the semiconductor dealer; In fact plating palladium copper cash can reach and save cost benefit not as expection in the technical use of routing bond package.
In view of this, the present invention is through making compound silver-colored line with gold, silver and palladium according to the special component ratio, and its operation property almost is equal to gold thread, and can pass through hot and humid reliability test, reaches cost-effective purpose really.
Summary of the invention
The object of the present invention is to provide a kind of compositions such as gold, silver, palladium that contain, operation property is good, can pass through hot and humid reliability test, and cost-effective compound silver-colored line.
Compound silver-colored line of the present invention comprises gold, palladium, and silver; In this compound silver-colored line, the content of gold is more than or equal to 4wt% and less than 8wt%, and the content of palladium is between between 2wt%~4wt%.
Compound silver-colored line of the present invention also comprises platinum, and the content of platinum is not more than 2wt%.
Beneficial effect of the present invention is: the part by weight through compositions such as gold, palladium and silver is adjusted, and makes its operation property not only can be suitable with gold thread, and can pass through hot and humid reliability test, and significantly saves the processing procedure cost.
Embodiment
Compound silver-colored line of the present invention comprises gold, palladium, platinum, and composition such as remaining silver.
Wherein, The weight percentage of gold is more than or equal to 4wt% and less than 8wt%, if gold content is lower than 4wt%, can cause alloy rigidity of the present invention too high; Cause operation property not good easily; If gold content surpasses 8wt%, the operation property of compound silver-colored line of the present invention and reliability not only fail obviously to improve, and also can significantly increase cost.
The weight percentage of palladium is between 2wt%~4wt%; If palladium content is lower than 2wt%, compound silver-colored line of the present invention can't pass through hot and humid reliability test, if palladium content is higher than 4wt%; The alloy rigidity of compound silver-colored line of the present invention can be too high, causes operation property and yield not good.
The content of platinum is between 0~2wt%, if platinum content is higher than 2wt%, the fusing point of compound silver-colored line of the present invention can uprise, admittedly molten rate is unstable, and cost improves.
When making compound silver-colored line of the present invention, metal materials such as gold, palladium, platinum and silver are thrown in the smelting furnace, with the mixing alloy liquid that makes a molten; Then; Make this alloy liquid via ingot casting manufacturing (ingot making), rolling (press roll), mainly take out line (heavy drawing), carefully take out line (fine drawing), surface clean, oven dry, typing annealing (final annealing), coiling processed such as (rewinding); Just can process a compound silver-colored line finished product, give use again in the routing bond package processing procedure of semiconductor element.
The present invention will further specify with regard to following examples, but will be appreciated that, illustrated embodiment is merely and illustrates usefulness, and should not be interpreted as the restriction that the present invention implements.
[embodiment 1 to 12 and the comparative example 1 to 12 of compound silver-colored line]
According to alloying component and the part by weight shown in the table 1; Metal materials such as gold, palladium, platinum and silver are thrown in the smelting furnace; With the mixing alloy liquid that makes a molten; Make again this alloy liquid via ingot casting manufacturing, rolling, mainly take out line, carefully take out processed such as line, surface clean, oven dry, typing annealing, coiling, making a compound silver-colored line finished product, and in order to use in the routing bond package processing procedure of semiconductor element.
Then, the evaluation method of stating later on comes routing is engaged the compound silver-colored line finished product after using, and carries out operation property testing and reliability test, and the gained test result is as shown in table 1.
Table 1
Figure BSA00000640473200031
[evaluation method]
One, operation property (Unit Per Hour is called for short UPH)
Through test, the per hour institute of gold thread can production unit (representing with the UPH gold thread) be 375pcs/hr, and the UPH (representing with the compound silver-colored line of UPH) with obtained compound silver-colored line makes comparisons with the UPH gold thread again.
Two, reliability (Reliability)
(1) pressure cooker testing (Press Cooker Test is called for short PCT)
According to JESD22-A102; Compound silver-colored line products is placed under the environment of 121 ℃ of temperature, humidity 100%RH, pressure 29.7psi; After the test of 250hrs, adopt FIB (Focused Ion Beam is called for short FIB) to observe Jie's metal oxide (IMC) situation between compound silver-colored line and substrate; Assessing the anti-high humidity ability of compound silver-colored line products, and estimate according to standards:
None: do not have hole (not losing efficacy)
Minor: a small amount of hole (not losing efficacy)
Failed: obvious a large amount of hole (inefficacy)
(2) the high temperature humidity unsaturated vapor stress test (High Accelerated Temperature and Humidity Stress Test is called for short HAST) that quickens
According to JESD22-A110; Compound silver-colored line products is placed on 130 ℃ of temperature, humidity 85%RH, applies under the environment of 6 volts, after the test of 200hrs, adopt FIB to observe the IMC situation equally; Assessing the anti-high humidity ability of compound silver-colored line products, and estimate according to standards:
Passed: do not have~a spot of hole, through
Failed: obvious a large amount of hole, lost efficacy
(3) constant temperature and humidity bias voltage test (Thermal Humidity Bias Life Test is called for short THB)
According to JESD22-A101, compound silver-colored line products is placed on 85 ℃ of temperature, humidity 85%RH, under the environment that applies 6 volts of rated voltages; After the test of 1000hrs; The same FIB of employing observes the IMC situation, assessing the resistance to corrosion of compound silver-colored line products, and estimates according to standards:
Passed: do not have~a spot of hole, through
Failed: obvious a large amount of hole, lost efficacy
[interpretation of result]
Can know from the test result shown in the table 1; Like embodiment 1 to 12, the content of gold more than or equal to 4wt% and less than the content of 8wt%, palladium between between 2wt%~4wt%, the content of platinum between 0~2wt%, and all the other are under the alloying component ratio of silver; The operation sex expression of compound silver-colored line of the present invention is splendid; Quite near the operation property of gold thread, and, hot and humid reliability tests such as PCT, HAST and THB can be passed through; Its result also is equivalent to the reliability of gold thread, especially on the processing procedure cost, is able to significantly reduce.
And the prepared compound silver-colored line of the foregoing description is carrying out binding ability test in addition, comprise ball tensile test (Ball Pull Test is called for short BPT) and ball thrust test (Ball Shear Test is called for short BST) after, the gained result is also apparently higher than the gold thread person.
Relatively, during more than or equal to 8wt%, like comparative example 1 to 4, the operation property of compound silver-colored line of the present invention and reliability also fail obviously to improve, and be especially still higher on cost, can't meet semiconductor packages dealer demand at the content of gold.
In addition, like comparative example 5 to 11, be lower than 4wt% at the content of gold; Or the content of palladium is when being higher than 4wt%, and the alloy rigidity of compound silver-colored line of the present invention can be too high, causes operation property and yield to perform poor; And, like comparative example 12, if the content of palladium is lower than the words of 2wt%; The high-temp resisting high-humidity resisting scarce capacity of compound silver-colored line of the present invention can't reach the reliability requirement.
In sum; Compound silver-colored line of the present invention; Content through gold be more than or equal to 4wt% and less than the content of 8wt%, palladium be between between 2wt%~4wt%, the content of platinum is between 0wt%~2wt%, and all the other are the specific alloy components containing ratio preparation of silver, its operation property not only can be suitable with gold thread; And can pass through hot and humid reliability test, and significantly save the processing procedure cost.

Claims (2)

1. a compound silver-colored line comprises gold, palladium, and silver; It is characterized in that:
In this compound silver-colored line, the content of gold is more than or equal to 4wt% and less than 8wt%, and the content of palladium is between between 2wt%~4wt%.
2. compound silver-colored line according to claim 1 is characterized in that: also comprise platinum, the content of platinum is not more than 2wt%.
CN201110431598.6A 2011-07-11 2011-12-21 Composite silver wire Active CN102592700B (en)

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TW100124441A TW201216300A (en) 2011-07-11 2011-07-11 Composite silver thread
TW100124441 2011-07-11

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103681568A (en) * 2012-09-04 2014-03-26 赫劳斯材料工艺有限及两合公司 Silver alloy wire for bonding applications
CN104103615A (en) * 2013-04-01 2014-10-15 光大应用材料科技股份有限公司 Silver alloy welding wire
CN104380446A (en) * 2013-03-14 2015-02-25 大自达电线株式会社 Bonding wire
CN105745339A (en) * 2013-09-04 2016-07-06 Mk电子株式会社 Silver alloy bonding wire and method for manufacturing same
CN112342426A (en) * 2020-11-10 2021-02-09 汕头市骏码凯撒有限公司 Novel silver alloy bonding wire and manufacturing method thereof

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JP5399581B1 (en) * 2013-05-14 2014-01-29 田中電子工業株式会社 High speed signal bonding wire
JP6660595B2 (en) 2016-06-07 2020-03-11 パナソニックIpマネジメント株式会社 Parking space search device, program and recording medium

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WO2006132413A1 (en) * 2005-06-10 2006-12-14 Tanaka Kikinzoku Kogyo K.K. Silver alloy for electrode, wiring and electromagnetic shielding
CN101630670A (en) * 2008-07-14 2010-01-20 Mk电子株式会社 Ag-based alloy lead wire for semiconductor encapsulation
CN101786155A (en) * 2009-01-24 2010-07-28 李俊德 Composite gold wire and manufacture method thereof
US20100239456A1 (en) * 2009-03-23 2010-09-23 Lee Jun-Der Composite alloy bonding wire and manufacturing method thereof
CN102154574A (en) * 2010-10-18 2011-08-17 东莞市正奇电子有限公司 Alloy wire for connecting semiconductor components

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KR101001700B1 (en) * 2007-03-30 2010-12-15 엠케이전자 주식회사 Ag-base alloy for semiconductor package
TW201028227A (en) * 2009-01-23 2010-08-01 jun-de Li Method for manufacturing composite metal wire and product thereof
JP4771562B1 (en) * 2011-02-10 2011-09-14 田中電子工業株式会社 Ag-Au-Pd ternary alloy bonding wire

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Publication number Priority date Publication date Assignee Title
JPH11288962A (en) * 1998-04-01 1999-10-19 Sumitomo Metal Mining Co Ltd Bonding wire
CN1280387A (en) * 1999-07-12 2001-01-17 索尼株式会社 Metal material for electronic unit, electronic unit, electronic equipment and treating method for metal material
WO2006132413A1 (en) * 2005-06-10 2006-12-14 Tanaka Kikinzoku Kogyo K.K. Silver alloy for electrode, wiring and electromagnetic shielding
CN101630670A (en) * 2008-07-14 2010-01-20 Mk电子株式会社 Ag-based alloy lead wire for semiconductor encapsulation
CN101786155A (en) * 2009-01-24 2010-07-28 李俊德 Composite gold wire and manufacture method thereof
US20100239456A1 (en) * 2009-03-23 2010-09-23 Lee Jun-Der Composite alloy bonding wire and manufacturing method thereof
CN102154574A (en) * 2010-10-18 2011-08-17 东莞市正奇电子有限公司 Alloy wire for connecting semiconductor components

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103681568A (en) * 2012-09-04 2014-03-26 赫劳斯材料工艺有限及两合公司 Silver alloy wire for bonding applications
CN103681568B (en) * 2012-09-04 2017-03-01 赫劳斯材料工艺有限及两合公司 Silver alloy lead for joint applications
CN104380446A (en) * 2013-03-14 2015-02-25 大自达电线株式会社 Bonding wire
CN104103615A (en) * 2013-04-01 2014-10-15 光大应用材料科技股份有限公司 Silver alloy welding wire
CN105745339A (en) * 2013-09-04 2016-07-06 Mk电子株式会社 Silver alloy bonding wire and method for manufacturing same
CN112342426A (en) * 2020-11-10 2021-02-09 汕头市骏码凯撒有限公司 Novel silver alloy bonding wire and manufacturing method thereof

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TWI365458B (en) 2012-06-01
CN102592700B (en) 2016-08-03
KR101415851B1 (en) 2014-07-09
TW201216300A (en) 2012-04-16
JP2013021280A (en) 2013-01-31
JP5417647B2 (en) 2014-02-19
KR20130007952A (en) 2013-01-21

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