CN102570978A - Random noise source and manufacturing method thereof - Google Patents
Random noise source and manufacturing method thereof Download PDFInfo
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- CN102570978A CN102570978A CN2012100307059A CN201210030705A CN102570978A CN 102570978 A CN102570978 A CN 102570978A CN 2012100307059 A CN2012100307059 A CN 2012100307059A CN 201210030705 A CN201210030705 A CN 201210030705A CN 102570978 A CN102570978 A CN 102570978A
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Abstract
The invention relates to a random noise resource and a manufacturing method thereof. The random noise source comprises a two-end semiconductor superlattice device which is fixed on a microwave printed circuit board and electrically connected with the microwave printed circuit board, wherein the two-end semiconductor superlattice device comprises a semi-insulation semiconductor substrate, a first semiconductor contact layer, a semiconductor superlattice layer structure and a second semiconductor contact layer which epitaxially grow on the semi-insulation semiconductor substrate sequentially, a first contact electrode and a second contact electrode, wherein the first semiconductor contact layer, the semiconductor superlattice layer structure and the second semiconductor contact layer are made of compound semiconductor materials in the III-V cluster or II-VI cluster; and n-type impurities are doped in the first semiconductor contact layer, a potential well layer in the semiconductor superlattice layer structure and the second semiconductor contact layer respectively. Due to a solid automatic chaotic oscillation characteristic of the semiconductor superlattice device, the random noise resource with true randomness, high quality and high bandwidth is implemented; and flat broadband chaotic signals with bandwidths of greater than GHz are output.
Description
Technical field
The present invention relates to signal processing and cryptographic technique field, particularly a kind of random noise source and preparation method thereof.
Background technology
The random noise source technology is an important branch of cryptographic technique.Random noise source and tandom number generator range of application are indispensable critical components in close system of system and all kinds of cryptosecurity system very extensively.Its operating state directly influences the reliability and stability of close system of system and all kinds of cryptosecurity system, and the relationship between quality of the random sequence that is produced is to the protection intensity of ciphering equipment to information.
Random noise source is the core of tandom number generator.True randomness, high-quality, high bandwidth are three basic demands of high-quality noise source.At first, high-quality noise source, requiring signal is very at random.In theory; The random number that produces through digital circuit or computerized algorithm is pseudorandom; And the noise signal of true random can only derive from natural various spontaneous chaos phenomenon, and the recombination noise as thermal noise, semiconductor diode are produced in the avalanche breakdown process perhaps adopts MOS (Metal-Oxide-Semiconductor; Metal-oxide semiconductor (MOS)) random noise of structural interface defective etc., the common limitation of these noise sources is bandwidth too narrow (being no more than 5MHz).Secondly, the quality of noise signal will satisfy the requirement of randomness, can be through various parameter testings, like frequency, sequence, playing card, the distance of swimming and autocorrelation test etc.This requires chaotic signal to come from the non-linear chaotic oscillation system of big degree of freedom variable.Strong nonlinearity coupling between the big degree of freedom variable can produce space-time chaos (Spatiotemporal Chaos) vibration; This will greatly increase the chaos system complexity; Make intercoupling between the attractor in different spatial domains; Thereby let the track of space-time chaos vibration almost be full of whole phase space, greatly improve noise and quality of random numbers.At last, satisfying under true randomness and the high-quality prerequisite, requiring noise source to have high as far as possible bandwidth.The bandwidth of noise source has determined to produce the speed that random number can reach.In theory, though use the method for throwing coin also can produce high-quality random number, this method speed is very slow, has satisfied not the demand of system applies.Along with increasing substantially of present conversion speed, transmission speed and transmission capacity, information technology constantly proposes new challenge and requirement to the speed and the quality of tandom number generator.The speed of existing digital signal processor can reach more than the 2GHz, and the speed of the tandom number generator of using in the secure communication should be mated synchronously.
At present, the typical method that utilizes natural physical phenomenon to produce random number has: to the direct amplification of circuit or Resistance Thermal Noise, based on the randomizer of oscillator sampling, through constructing chaos circuit generation random number etc.These produce the method for true random number, owing to receive the restriction of physical resource electronic device bandwidth, the random number speed of generation is all in Mbit/s magnitude or following, and speed can only satisfy the low side needs.Along with the continuous development of present information technology, this gap will be more obvious.In order to realize tandom number generator at a high speed, press for and seek new high-quality, the noise source of high bandwidth.
Summary of the invention
The present invention provides a kind of random noise source and preparation method thereof, to obtain random noise source with advantages such as true randomness, high-quality and high bandwidths.
Particularly, the present invention provides a kind of random noise source, comprises microwave printed circuit board (PCB) and two end semiconductor superlattice devices.Wherein, the semiconductor superlattice device is fixed on the microwave printed circuit board (PCB), and comprises semi insulating semiconductor substrate, first semiconductor contact layer, semiconductor superlattice layer structure, second semiconductor contact layer and first contact electrode and second contact electrode.First semiconductor contact layer is formed on the semi insulating semiconductor substrate and is doped with n type impurity; Semiconductor superlattice layer structure is formed on the subregion of first semiconductor contact layer and makes the exposed region of the semiconductor contact layer of winning form table top, and the potential well layer in the semiconductor superlattice layer structure is doped with n type impurity (for example silicon); Second semiconductor contact layer is formed on the semiconductor superlattice layer structure and is doped with n type impurity; First contact electrode and second contact electrode are respectively formed on the table top that first semiconductor contact layer forms and on second semiconductor contact layer and form ohmic contact, and first contact electrode and second contact electrode are electrically connected to microwave circuit boards.
In addition; The present invention also provides a kind of manufacture method of random noise source; May further comprise the steps: the semiconductor superlattice material structure (a) is provided; Wherein the semiconductor superlattice material structure comprises semi insulating semiconductor substrate and epitaxial growth in regular turn first semiconductor contact layer, semiconductor superlattice layer structure and second semiconductor contact layer on the semi insulating semiconductor substrate; The material of first semiconductor contact layer, semiconductor superlattice layer structure and second semiconductor contact layer is III-V family or group material, and the potential well layer and second semiconductor contact layer in first semiconductor contact layer, semiconductor superlattice layer structure are doped with n type impurity silicon; (b) in regular turn semiconductor super crystal lattice material structure is carried out mesa etch, passivation layer deposition, passivation layer perforate, Metal Deposition and annealing and form ohmic contact to obtain two end semiconductor superlattice devices with solid-state spontaneous chaotic oscillation characteristic; And (c) utilize the silver slurry that the semiconductor superlattice device is fixed on the microwave printed circuit board (PCB) and through lead-in wire a plurality of contact electrodes in the semiconductor superlattice device and microwave printed circuit board (PCB) are formed electric connection to make packaged random noise source.
The present invention utilizes the solid-state spontaneous chaotic oscillation characteristic of semiconductor superlattice device, can realize the random noise source of true randomness, high-quality and high bandwidth, realizes the output of the smooth broadband chaotic signal that bandwidth GHz is above; Thereby can obtain high-quality random number sequence, be applied to fields such as data encryption, key management, security protocol, digital signature, authentication.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention; Understand technological means of the present invention in order can more to know; And can implement according to the content of specification, and for let of the present invention above-mentioned with other purposes, feature and advantage can be more obviously understandable, below special act preferred embodiment; And conjunction with figs., specify as follows.
Description of drawings
Figure 1A-1E is the process sketch map that the present invention utilizes semiconductor microactuator processing and fabricating semiconductor superlattice device;
Fig. 2 is the structural representation of a kind of random noise source of the present invention;
Fig. 3 is a kind of typical structure example schematic of semiconductor superlattice material structure among Figure 1A;
Fig. 4 is a kind of random noise source signal test circuit sketch map of the present invention.
Embodiment
Figure 1A-1E is the process sketch map that the present invention utilizes semiconductor microactuator processing and fabricating semiconductor superlattice device.See also Figure 1A; Semiconductor superlattice material structure 10 at first is provided; Its method for example is to utilize the molecular beam epitaxy of present main flow (Molecular Beam Epitaxy; MBE), (Metal Organic Chemical Vapor Deposition, MOCVD) homepitaxy growing technology and doping techniques form epitaxially grown layer to metal organic chemical vapor deposition on semi insulating semiconductor substrate 11.At this, epitaxially grown layer comprises first semiconductor contact layer 13, semiconductor superlattice layer structure 15 and second semiconductor contact layer 17 that is formed in regular turn on the semi insulating semiconductor substrate 11.In the present embodiment, the material of epitaxially grown layer uses III-V family or II-VI group iii v compound semiconductor material, GaAs/AlAs for example, GaAs/AlGaAs, GaAs/InGaAs, material systems such as InGaAs/InP; Semiconductor superlattice layer structure 15 mainly comprise potential well layer and the barrier layer of periodic arrangement and form a plurality of range upon range of cycles, the single range upon range of cycle generally at 30nm (nanometer) to the 100nm scope, generally undope or weak doping.It is highly doped that first, second semiconductor contact layer 13,17 carries out the n type, so that the ohmic contact of follow-up formation low-resistance.Usually, the structure after the epitaxial growth is the epitaxial semiconductor wafer sheet, therefore need cut into slices to obtain to have the semiconductor superlattice material structure 10 of suitable dimension; And the size range of single semiconductor superlattice material structure for example at 10 μ m (micron) to 100 mu m ranges.In addition, after section, also can use acetone, isopropyl alcohol and washed with de-ionized water semiconductor superlattice material structure 10 usually.
Then; See also Figure 1B; Semiconductor super crystal lattice material structure 10 is carried out mesa etch; Concrete grammar can be: use dry etching or wet etching mode etching second semiconductor contact layer 17 and semiconductor superlattice layer structure 15 behind first semiconductor contact layer 13, to stop; So that second semiconductor contact layer 17a after the etching and semiconductor superlattice layer structure 15a be positioned on the subregion of first semiconductor contact layer 13, and the exposed region of first semiconductor contact layer 13 forms table top 130.In Figure 1B, table top 130 is positioned at the second semiconductor contact layer 17a and the both sides of semiconductor superlattice layer structure 15a after the etching.Dry etching for example be reactive ion etching (Reactive Ion Etching, RIE), the inductively coupled plasma etching (Inductively Coupled Plasma, ICP) or ion beam milling (Ion Beam Etching, IBE) etc.
See also Fig. 1 C, deposit passivation layer 18 is to cover first semiconductor contact layer 13, semiconductor superlattice layer structure 15a and the second semiconductor contact layer 17a.Particularly, can use PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition) to form passivation layer 18.Passivation layer 18 for example is made up of the silica (SiO2) or the silicon nitride dielectric materials such as (SiNx) of 100nm to 2000nm thickness.
See also Fig. 1 D, carry out the passivation layer opening step, on passivation layer 18, to form contact hole 18a, 18b.Wherein, The passivation layer perforate can use dry method (for example RIE etc.) or wet etching mode to realize; Contact hole 18a is formed on the table top 130 that first semiconductor contact layer 13 forms and is positioned at the side of the semiconductor superlattice layer structure 15a and the second semiconductor contact layer 17a, and contact hole 18b is formed on the second semiconductor contact layer 17a.
See also Fig. 1 E, carry out metal deposition step, the practical implementation method can be and makes deposited by electron beam evaporation, sputter or thermal evaporation form metal level, and metal level is for example by AuGe, Ni, Au and alloy composition thereof.In Fig. 1 E, metal level comprises 19a of first and second portion 19b; Wherein, the 19a of first is deposited in the contact hole 18a, and second portion 19b is deposited on contact hole 18b and the part passivation layer 18 and is provided with at interval through passivation layer 18 with first semiconductor contact layer 13.
At last; Structure among Fig. 1 E is carried out annealing steps; Make the 19a of first of metal level and second portion 19b form ohmic contact and make first, second contact electrode 121 and 123 (seeing also Fig. 2) with first semiconductor contact layer 13 and the second semiconductor contact layer 17a respectively with short annealing, and second contact electrode 123 is provided with and electrically insulated from one another (also promptly using the method for medium upward wiring to realize drawing of little mesa devices electrode) at interval through the passivation layer 18 and first semiconductor contact layer 13; Thereby can obtain two end semiconductor superlattice devices 120 (as shown in Figure 2) in the present embodiment.Annealing temperature is for example at 350 degrees centigrade to 450 degrees centigrade, and annealing time for example is 10 to 200 seconds.
Seeing also Fig. 2, is the structural representation of a kind of random noise source of the present invention.In Fig. 2, semiconductor superlattice device 120 for example utilizes the silver slurry to be fixed on microwave printed circuit board (PCB) 110, and with the press welder lead-in wire first, second contact electrode 121,123 is drawn respectively, realizes the output of signal; And then obtain packaged random noise source 100.At this, the packing forms of random noise source 100 can adopt packing forms such as DIP, QFP.
See also Fig. 3, be a kind of typical structure example schematic of semiconductor superlattice material structure 10 among Figure 1A.In Fig. 3; Semiconductor superlattice material structure 10 comprises: Semi-insulating GaAs substrate 11 is formed on n type Doped GaAs first contact layer 13 on the Semi-insulating GaAs substrate 11, not separator 16a under the Doped GaAs, GaAs/AlAs superlattice layer structure 15, not separator 16b and n type Doped GaAs second contact layer 17 on the Doped GaAs in regular turn.Wherein, n type Si Doped GaAs first contact layer 13 comprises that the 1000nm doping content is 2 * 10
18Cm
-3N type silicon doping GaAs layer and 10nm doping content be 10
17Cm
-3The n type silicon doping GaAs layer of magnitude.Separator 16a is not the unadulterated GaAs layer of 4nm under the Doped GaAs, so that GaAs first contact layer 13 is separated the leakage that reduces charge carrier with GaAs/AlAs superlattice layer structure 15.GaAs/AlAs superlattice layer structure 15 comprises M (for example 40) range upon range of cycle, and the single range upon range of cycle comprises that in regular turn layer 153 is improved at range upon range of 4nm AlAs barrier layer 151,2nm GaAs first interface, the 5nm doping content is 3 * 10
17Cm
-3N type silicon doping GaAs potential well layer 155 and 2nm GaAs second contact surface improve layer 157; Wherein the interface quality that layer 153,157 can be used for improving potential well is improved at first, second interface.Separator 16b is not the plain GaAs layer of 4nm on the Doped GaAs, so that GaAs second contact layer 17 is separated the leakage that reduces charge carrier with GaAs/AlAs superlattice layer structure 15.N type Doped GaAs second contact layer 17 comprises that the 10nm doping content is 10
17Cm
-3The n type silicon doping GaAs layer and the 500nm doping content of magnitude are 2 * 10
18Cm
-3N type silicon doping GaAs layer.Need to prove; Structure among Fig. 3 is merely the structure of semiconductor superlattice material structure of the present invention and gives an example, and the needs that have or not visual practical application of the thickness of each layer in the semiconductor superlattice material structure 10, doping content and upper and lower separator are suitably adjusted.
See also Fig. 4, be the signal test circuit sketch map of a kind of random noise source of the present invention.In embodiments of the present invention; After making random noise source 100; Can build signal test circuit as shown in Figure 4 the random noise signal of random noise source 100 output is analyzed, wherein noise signal analysis comprise when oscillator signal carried out, frequency-domain analysis two parts.In signal test circuit shown in Figure 4, measure 50 ohm of high-frequency electrical cables that connection line all adopts band SMA (Sub-Miniature Type A, miniature A type) joint, bandwidth is more than the 20GHz; Sample resistance 200 uses 50 ohm accurate coaxial load; Bias supply uses Keithley 2612A power supply; Ondograph 300 adopts Agilent 86109B 50G high-speed sampling oscilloscope, and ondograph 300 and spectrum analyzer 400 are electrically connected to the node between sample resistance 200 and the random noise source 100.Through this test structure, can analyze the solid-state spontaneous chaotic oscillation characteristic of superlattice under the certain bias voltage.From actual test result: the random noise source 100 that the above embodiment of the present invention provides can produce the broadband noise signal that three dB bandwidth reaches 2GHz, and its speed that can produce random number reaches 1 Gbit/s.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction; Though the present invention discloses as above with preferred embodiment; Yet be not in order to limiting the present invention, anyly be familiar with the professional and technical personnel, in not breaking away from technical scheme scope of the present invention; When the technology contents of above-mentioned announcement capable of using is made a little change or is modified to the equivalent embodiment of equivalent variations; In every case be not break away from technical scheme content of the present invention, to any simple modification, equivalent variations and modification that above embodiment did, all still belong in the scope of technical scheme of the present invention according to technical spirit of the present invention
Claims (10)
1. a random noise source is characterized in that, comprising:
The microwave printed circuit board (PCB); And
Two end semiconductor superlattice devices are fixed on this microwave printed circuit board (PCB), and this two ends semiconductor superlattice device comprises:
The semi insulating semiconductor substrate;
First semiconductor contact layer is formed on this semi insulating semiconductor substrate and is doped with n type impurity;
Semiconductor superlattice layer structure is formed on the subregion of this first semiconductor contact layer and makes the exposed region of this first semiconductor contact layer form table top, and the potential well layer in this semiconductor superlattice layer structure is doped with n type impurity;
Second semiconductor contact layer is formed on this semiconductor superlattice layer structure and is doped with n type impurity; And
First contact electrode and second contact electrode; Be respectively formed on the table top that this first semiconductor contact layer forms and on this second semiconductor contact layer and form ohmic contact, and this first contact electrode is electrically connected to this microwave circuit boards with this second contact electrode;
Wherein, the material of this first semiconductor contact layer, this semiconductor superlattice layer structure and this second semiconductor contact layer is III-V family or group material.
2. random noise source as claimed in claim 1 is characterized in that, this n type impurity is silicon.
3. random noise source as claimed in claim 1 is characterized in that, this semiconductor superlattice layer structure comprises a plurality of range upon range of cycles, and each range upon range of cycle comprises that successively barrier layer, first interface improvement layer, potential well layer and second contact surface improve layer.
4. random noise source as claimed in claim 3 is characterized in that, the thickness range in single this range upon range of cycle is 30 nanometer to 100 nanometers.
5. random noise source as claimed in claim 1 is characterized in that, each in this first semiconductor contact layer and this second semiconductor contact layer comprises a plurality of compound semiconductor layers with different n type doping impurity concentration.
6. random noise source as claimed in claim 1 is characterized in that, this two ends semiconductor superlattice device further comprises:
At the compound semiconductor layer that forms respectively between this first semiconductor contact layer and this semiconductor superlattice layer structure and between this second semiconductor contact layer and this semiconductor superlattice layer structure; So that this first semiconductor contact layer and this second semiconductor contact layer and this semiconductor superlattice layer structure are separated, reduce the leakage of charge carrier.
7. random noise source as claimed in claim 1; It is characterized in that; This second contact electrode extends to a side that does not form this first contact electrode on the table top that this first semiconductor contact layer forms, and is provided with at interval through passivation layer and this first semiconductor contact layer.
8. the manufacture method of a random noise source is characterized in that, may further comprise the steps:
Step (1): the semiconductor superlattice material structure is provided; This semiconductor superlattice material structure comprises semi insulating semiconductor substrate and epitaxial growth in regular turn first semiconductor contact layer, semiconductor superlattice layer structure and second semiconductor contact layer on this semi insulating semiconductor substrate; The material of this first semiconductor contact layer, this semiconductor superlattice layer structure and this second semiconductor contact layer is III-V family or group material, and potential well layer and this second semiconductor contact layer in this first semiconductor contact layer, this semiconductor superlattice layer structure are doped with n type impurity silicon;
Step (2): in regular turn this semiconductor superlattice material structure is carried out mesa etch, passivation layer deposition, passivation layer perforate, Metal Deposition and annealing and form ohmic contact to obtain two end semiconductor superlattice devices with solid-state spontaneous chaotic oscillation characteristic; And
Step (3): utilize silver-colored slurry that this two ends semiconductor superlattice device is fixed on the microwave printed circuit board (PCB) and through lead-in wire a plurality of contact electrodes in this semiconductor superlattice device and this microwave printed circuit board (PCB) are formed electric connection to make packaged random noise source.
9. the manufacture method of random noise source as claimed in claim 8 is characterized in that, in step (2) before, also comprises step:
Use acetone, isopropyl alcohol and this semiconductor superlattice material structure of washed with de-ionized water.
10. the manufacture method of random noise source as claimed in claim 8 is characterized in that, annealing temperature is 350 degrees centigrade to 450 degrees centigrade, and annealing time is 10 seconds to 200 seconds.
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Application publication date: 20120711 |