CN102570305B - Preparation method of 850nm laser based on silicon base pseudo gallium arsenide substrate - Google Patents
Preparation method of 850nm laser based on silicon base pseudo gallium arsenide substrate Download PDFInfo
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- CN102570305B CN102570305B CN 201210057292 CN201210057292A CN102570305B CN 102570305 B CN102570305 B CN 102570305B CN 201210057292 CN201210057292 CN 201210057292 CN 201210057292 A CN201210057292 A CN 201210057292A CN 102570305 B CN102570305 B CN 102570305B
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Abstract
The invention relates to a preparation method of a 850nm laser based on a silicon base pseudo gallium arsenide substrate. The preparation method comprises the following steps: growing a first buffer layer on a substrate by a UHVCVD (ultrahigh vacuum chemical vapor deposition) method; placing the substrate with the first buffer layer into an MOCVD (metal organic chemical vapor deposition) reaction chamber and performing the 700 DEG C high-temperature process; forming a second buffer layer which extends on the first buffer layer; growing a pseudo GaAs layer on the second buffer layer; growing a 850nm laser structure on the pseudo GaAs layer, wherein the 850nm laser structure comprises an A10.5Ga0.5As lower cover layer, an A10.3Ga0.7As lower wave guide layer, an InGaAs active area, an A10.3Ga0.7As upper wave guide layer, an A10.5Ga0.5As upper cover layer and a pseudo GaAs contact layer which grow in turn; etching the pseudo GaAs contact layer on the 850nm laser structure to form a ridge; generating silicon dioxide insulation layers on the upper surface of an epitaxial wafer and the side surface of the ridge; making an electrode window on the ridge; making titanium platinum gold electrodes on the silicon dioxide insulation layer and the electrode window, thinning and then making a gold germanium nickel electrode on the back of the substrate, and thus finishing the preparation of the laser.
Description
Technical field
The present invention relates to technical field of semiconductors, refer to especially a kind of preparation method of the 850nm laser based on silica-based counterfeit gallium arsenide substrate.
Background technology
For the development of optoelectronic integrated circuit (Opto electronic Integrated Circuit, OEIC), maximum problem is to lack silica-based light source.Silicon materials are as the basis of microelectric technique, are the semi-conducting materials of broad research the most; The maturity of silicon processing technique is far above the III-V group iii v compound semiconductor material.Yet the silicon base luminescence problem is never solved well.Consider based on the development of the maturation of GaAs, InP laser with and incompatible with preferred circuit technique, the preparation of silica-based III-V compound semiconductor laser is a feasible scheme that solves the silicon-based optical interconnection problem.As optical fiber communication one of wavelength, the 850nm wavelength laser mainly produces based on the laser of GaAs substrate; The development of silica-based 850nm laser is significant to the solution of light interconnection problems.Simultaneously, silicon materials can produce strong absorption to the light of 850nm, and the research and development of silica-based 850nm laser and later use must be noted that to address this problem.
The high-quality III-V of extension family semi-conducting material is the prerequisite of preparation Si base laser on the Si substrate.GaAs studies comparatively ripe III-V family material, and this method adopts GaAs to study the extension problem as the representative of III-V.The lattice of Si and GaAs adaptive large (4.1%), thermal mismatching is large, and (thermal coefficient of expansion of Si and GaAs is respectively 2.59 * 10
-6K
-1, 5.75 * 10
-6K
-1), therefore when heteroepitaxy, can produce a large amount of dislocations.Simultaneously, because the existence of polar material extension and substrate level on nonpolar substrate, can produce a large amount of antiphase domain (Anti-phase domain in the epitaxial loayer, APD), antiphase domain border (Anti-phase boundary, APB) be scattering and the complex centre of charge carrier, introduce simultaneously defect level in the forbidden band.These dislocations and antiphase domain border can extend to the surface of epitaxial loayer always, have had a strong impact on the quality of epitaxial loayer.The growth of Si base III-V family material must solve this two problems.
Summary of the invention
The object of the invention is to, a kind of preparation method of the 850nm laser based on silica-based counterfeit gallium arsenide substrate is provided, the method can prepare the counterfeit GaAs material of high-quality Si base, for Si base optical interconnection provides the basis, the type 850nm laser can with the traditional silicon process compatible, also be an approach that solves silicon base luminescence problem among the OEIC.The method is by adopting Ge to obtain high-quality laser material as resilient coating and in conjunction with low temperature buffer layer technology and extension with the counterfeit GaAs buffer layer that Ge mates.
The invention provides a kind of preparation method of the 850nm laser based on silica-based counterfeit gallium arsenide substrate, may further comprise the steps:
Step 1: adopt the UHVCVD method at Grown the first resilient coating;
Step 2: growth is had the substrate of the first resilient coating, put into immediately the MOCVD reative cell and carry out 700 ℃ of high-temperature process;
Step 3: adopt the method for low-pressure MOCVD, extension the second resilient coating on the first resilient coating;
Step 4: at the counterfeit GaAs layer of the second resilient coating growth;
Step 5: adopt the method for MOCVD, at counterfeit GaAs layer growth 850nm laser structure, this 850nm laser structure comprises the successively Al of growth
0.5Ga
0.5As under-clad layer, Al
0.3Ga
0.7Waveguide under the As, InGaAs active area, Al
0.3Ga
0.7The upper ducting layer of As, Al
0.5Ga
0.5As top covering and counterfeit GaAs contact layer;
Step 6: etching on the counterfeit GaAs contact layer on the 850nm laser structure forms vallum;
Step 7: generate silicon dioxide insulating layer at the upper surface of epitaxial wafer and the side of vallum;
Step 8: making electrode window through ray on vallum;
Step 9: make the titanium platinum electrode at silicon dioxide insulating layer and electrode window through ray, behind the attenuate, make the gold germanium nickel electrode at the back side of substrate, finish the preparation of laser.
Characteristics of the present invention are:
1, is combined with MOCVD with the UHVCVD method, at Ge resilient coating and the high-quality III-V material of Si substrate growing high-quality.
2, low temperature buffer layer is effectively suppressed the antiphase domain at GaAs/Ge interface, by changing growth raw material, reduces growth temperature, other parameters such as Optimal Growing speed, the defective of minimizing heterogeneous interface, the quality of raising epitaxial loayer.
3, mix the indium source at GaAs buffer layer, the counterfeit GaAs transition zone with germanium substrate lattice coupling that obtains low indium component is to suppress the important step that defective obtains the high-quality laser structure.
Description of drawings:
For further specifying concrete technology contents of the present invention, be described in detail as follows below in conjunction with example and accompanying drawing, wherein:
Fig. 1-Fig. 5 is the preparation method's flow chart that the present invention is based on the 850nm laser of silica-based counterfeit gallium arsenide substrate.
Embodiment
See also Fig. 1 to Fig. 5, the invention provides a kind of preparation method of the 850nm laser based on silica-based counterfeit gallium arsenide substrate, may further comprise the steps:
Step 1: adopt the UHVCVD method at substrate 1 growth the first resilient coating 2.Wherein, substrate 1 is N-shaped low-resistance (001) silicon, partially＜110〉4 °; The material of the first resilient coating 2 is Ge.
Step 2: growth is had the substrate 1 of the first resilient coating 2, put into immediately the MOCVD reative cell and carry out 700 ℃ of high-temperature process, the time is 20min.
Step 3: adopt the method for low-pressure MOCVD, extension the second resilient coating 3 on the first resilient coating 2.Wherein, the material of the second resilient coating 3 is GaAs, adopting the grow condition of the second resilient coating 3 of MOCVD is that chamber pressure 100mBar, tert-butyl group dihydro arsenic and triethyl-gallium are raw material, in the growth course input molar flow of tert-butyl group dihydro arsenic and triethyl-gallium than V/III between 40-50, growth rate is at 0.1-0.3nm/s, thickness 100nm, and temperature is at 400-450 ℃, drop in temperature leads to first tert-butyl group dihydro arsenic 5min after growth temperature.
Step 4: at the counterfeit GaAs layer 4 of the second resilient coating 3 growths.Wherein, counterfeit GaAs layer 4 is the InGaAs material with the Ge Lattice Matching, just the component of In is few, about 1.1%, the condition of counterfeit GaAs layer 4 of growing is, arsine, trimethyl indium and trimethyl gallium are raw material, in the growth course input molar flow than V/III between 30-50, temperature 620-650 ℃, growth rate is 2 microns of 0.5-1.Onm/s thickness; When growing the second resilient coating 3 and counterfeit GaAs layer 4, the two silane of heavy doping, doping content is greater than 1 * 10
18Cm
-3
Step 5: adopt the method for MOCVD, at counterfeit GaAs layer 4 growth 850nm laser structure, this 850nm laser structure comprises successively growth, Al
0.5Ga
0.5As under-clad layer 5, Al
0.3Ga
0.7Waveguide 6 under the As, InGaAs active area 7, Al
0.3Ga
0.7The upper ducting layer 8 of As, Al
0.5Ga
0.5As top covering 9 and counterfeit GaAs contact layer 10.Wherein, the Al in the 850nm laser structure
0.5Ga
0.5As top covering 9 has comprised the Al of one deck grating layer remainder
0.5Ga
0.5What As top covering 9 and counterfeit GaAs contact layer 10 carried out is secondary epitaxy, and counterfeit GaAs contact layer 10 is to adopt carbon tetrabromide to mix, and doping content is greater than 1 * 10
19Cm
-3
Step 6: etching on the counterfeit GaAs contact layer 10 on the 850nm laser structure forms vallum 101.
Step 7: generate silicon dioxide insulating layer 11 at the upper surface of epitaxial wafer and the side of vallum 101.
Step 8: making electrode window through ray 111 on vallum 101.
Step 9: make titanium platinum electrode 12 at silicon dioxide insulating layer 11 and electrode window through ray 111, behind the attenuate, make gold germanium nickel electrode 13 at the back side of substrate 1, finish the preparation of laser.
Utilize Ge as the transition zone of Si and GaAs in this method, germanium substrate and GaAs have less lattice mismatch (about-0.08%) and coefficient of thermal expansion differences (germanium 5 * 10-6K-1, GaAs 5.75 * 10-6K-1).Simultaneously, low temperature GaAs resilient coating adopts tert-butyl group dihydro arsenic and triethyl-gallium to replace arsine and the trimethyl gallium that usually adopts, and reduces growth temperature, reduces growth rate, promotes the generation of certainly eliminating effect of APB.Then, when growth top layer GaAs, add a small amount of indium source, to offset germanium substrate and the lattice mismatch of GaAs and the defective that thermal coefficient of expansion causes.The photoelectric property such as band gap, refractive index, carrier mobility and the pure GaAs material that obtain like this high-quality InGaAs layer (component of In about 0.011%) are roughly approximate, but difference is a little arranged, so be called counterfeit GaAs (pseudo gallium arsenide).Obtain on this basis high-quality counterfeit gallium arsenide substrate, then carry out the extension of laser mechanism, preparation 850nm laser.
Although the present invention discloses as above with embodiment; so it is not to limit the present invention; have in the technical field under any and usually know the knowledgeable; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is when looking being as the criterion that claim defines.
Claims (7)
1. preparation method based on the 850nm laser of silica-based counterfeit gallium arsenide substrate may further comprise the steps:
Step 1: adopt the UHVCVD method at Grown the first resilient coating;
Step 2: growth is had the substrate of the first resilient coating, put into immediately the MOCVD reative cell and carry out 700 ℃ of high-temperature process;
Step 3: adopt the method for low-pressure MOCVD, extension the second resilient coating on the first resilient coating;
Step 4: at the counterfeit GaAs layer of the second resilient coating growth;
Step 5: adopt the method for MOCVD, at counterfeit GaAs layer growth 850nm laser structure, this 850nm laser structure comprises the successively Al of growth
0.5Ga
0.5As under-clad layer, Al
0.3Ga
0.7Waveguide under the As, InGaAs active area, Al
0.3Ga
0.7The upper ducting layer of As, Al
0.5Ga
0.5As top covering and counterfeit GaAs contact layer;
Step 6: etching on the counterfeit GaAs contact layer on the 850nm laser structure forms vallum;
Step 7: generate silicon dioxide insulating layer at the upper surface of epitaxial wafer and the side of vallum;
Step 8: making electrode window through ray on vallum;
Step 9: make the titanium platinum electrode at silicon dioxide insulating layer and electrode window through ray, behind the attenuate, make the gold germanium nickel electrode at the back side of substrate;
Wherein the material of the first resilient coating is Ge, and the material of the second resilient coating is GaAs, and the material of counterfeit GaAs layer is the InGaAs layer with the Ge Lattice Matching.
2. the preparation method of the 850nm laser based on silica-based counterfeit gallium arsenide substrate according to claim 1, wherein substrate is N-shaped low-resistance (001) silicon, partially＜110〉4 °.
3. the preparation method of the 850nm laser based on silica-based counterfeit gallium arsenide substrate according to claim 1, wherein the time of 700 ℃ of high-temperature process substrates is 20min.
4. the preparation method of the 850nm laser based on silica-based counterfeit gallium arsenide substrate according to claim 1, wherein adopt the grow condition of the second resilient coating of MOCVD to be, chamber pressure 100mBar, tert-butyl group dihydro arsenic and triethyl-gallium are raw material, in the growth course input molar flow of tert-butyl group dihydro arsenic and triethyl-gallium than V/III between 40-50, growth rate is at 0.1-0.3nm/s, thickness 10-20nm, temperature is at 400-450 ℃, drop in temperature leads to first tert-butyl group dihydro arsenic 5min after growth temperature.
5. the preparation method of the 850nm laser based on silica-based counterfeit gallium arsenide substrate according to claim 1, the condition of counterfeit GaAs layer of wherein growing is, arsine, trimethyl indium and trimethyl gallium are raw material, in the growth course input molar flow than V/III between 30-50, temperature 620-650 ℃, growth rate is 0.5-1.0nm/s, and thickness is 2 microns.
6. the preparation method of the 850nm laser based on silica-based counterfeit gallium arsenide substrate according to claim 1, when wherein growing the second resilient coating and counterfeit GaAs layer, the two silane of heavy doping, doping content is greater than 1 * 10
18Cm
-3
7. the preparation method of the 850nm laser based on silica-based counterfeit gallium arsenide substrate according to claim 1, wherein the counterfeit GaAs contact layer in the 850nm laser structure is to adopt carbon tetrabromide to mix, doping content is greater than 1 * 10
19Cm
-3
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| CN103077892B (en) * | 2013-01-22 | 2015-08-19 | 中国科学院半导体研究所 | The method of integrated HEMT device on silicon |
| CN103107096B (en) * | 2013-03-05 | 2015-07-15 | 中国科学院半导体研究所 | Method for producing silicon-based III-V group nMOS device |
| CN103177939B (en) * | 2013-03-05 | 2016-04-20 | 中国科学院半导体研究所 | A kind of preparation method of silica-based semi-insulating III-V material |
| CN103165446B (en) * | 2013-03-06 | 2016-04-20 | 中国科学院半导体研究所 | A kind ofly can be used for silica-based integrated HEMT device and preparation method thereof |
| CN103311106B (en) * | 2013-05-14 | 2015-12-23 | 中国科学院半导体研究所 | The preparation method of the silicon-based gallium arsenide material of low surface roughness |
| CN103390591B (en) * | 2013-07-22 | 2015-11-25 | 中国科学院半导体研究所 | The CMOS preparation method of silica-based high mobility III-V/Ge raceway groove |
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Effective date of registration: 20171026 Address after: 437100 cross two road of Xianning hi tech Industrial Park, Hubei Patentee after: Hubei Sailstar photoelectric Polytron Technologies Inc Address before: 100083 Beijing Qinghua East Road, Haidian District, No. 35 Patentee before: Semiconductor Inst., Chinese Academy of Sciences |
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