CN102569531A - 一种多晶硅片的钝化处理方法 - Google Patents
一种多晶硅片的钝化处理方法 Download PDFInfo
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- CN102569531A CN102569531A CN2012100470811A CN201210047081A CN102569531A CN 102569531 A CN102569531 A CN 102569531A CN 2012100470811 A CN2012100470811 A CN 2012100470811A CN 201210047081 A CN201210047081 A CN 201210047081A CN 102569531 A CN102569531 A CN 102569531A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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CN201210047081.1A CN102569531B (zh) | 2012-02-28 | 2012-02-28 | 一种多晶硅片的钝化处理方法 |
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CN201210047081.1A CN102569531B (zh) | 2012-02-28 | 2012-02-28 | 一种多晶硅片的钝化处理方法 |
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CN102569531A true CN102569531A (zh) | 2012-07-11 |
CN102569531B CN102569531B (zh) | 2014-07-09 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104359737A (zh) * | 2014-11-21 | 2015-02-18 | 中国科学院宁波材料技术与工程研究所 | 晶体硅体少子寿命的测试方法 |
CN106435522A (zh) * | 2016-09-27 | 2017-02-22 | 中国电子科技集团公司第四十八研究所 | 晶硅太阳电池氧化铝钝化膜的pecvd沉积工艺 |
CN106783652A (zh) * | 2016-11-23 | 2017-05-31 | 浙江正泰太阳能科技有限公司 | 一种ald成膜质量的检测方法 |
CN109728104A (zh) * | 2018-12-19 | 2019-05-07 | 盐城阿特斯协鑫阳光电力科技有限公司 | 电池片钝化层中间体、太阳能电池片及其制备方法 |
CN112904173A (zh) * | 2021-01-28 | 2021-06-04 | 西安奕斯伟硅片技术有限公司 | 一种测试硅片少子寿命的方法和设备 |
CN114843369A (zh) * | 2022-04-28 | 2022-08-02 | 晶科能源(海宁)有限公司 | 一种太阳能电池制备工艺的监控方法 |
CN115224153A (zh) * | 2021-03-31 | 2022-10-21 | 浙江晶科能源有限公司 | 太阳能电池片及其制备方法 |
Citations (5)
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US4722752A (en) * | 1986-06-16 | 1988-02-02 | Robert F. Orr | Apparatus and method for rinsing and drying silicon wafers |
US20080092951A1 (en) * | 2004-08-26 | 2008-04-24 | Qi Wang | Method for Passivating Crystal Silicon Surfaces |
CN102222726A (zh) * | 2011-05-13 | 2011-10-19 | 晶澳(扬州)太阳能科技有限公司 | 采用离子注入法制作交错背接触ibc晶体硅太阳能电池的工艺 |
CN102282683A (zh) * | 2009-01-14 | 2011-12-14 | 弗朗霍夫应用科学研究促进协会 | 太阳能电池和用于由硅基底制造太阳能电池的方法 |
TW201203588A (en) * | 2010-01-08 | 2012-01-16 | Suniva Inc | Solar cell including sputtered reflective layer and method of manufacture thereof |
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2012
- 2012-02-28 CN CN201210047081.1A patent/CN102569531B/zh active Active
Patent Citations (5)
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US4722752A (en) * | 1986-06-16 | 1988-02-02 | Robert F. Orr | Apparatus and method for rinsing and drying silicon wafers |
US20080092951A1 (en) * | 2004-08-26 | 2008-04-24 | Qi Wang | Method for Passivating Crystal Silicon Surfaces |
CN102282683A (zh) * | 2009-01-14 | 2011-12-14 | 弗朗霍夫应用科学研究促进协会 | 太阳能电池和用于由硅基底制造太阳能电池的方法 |
TW201203588A (en) * | 2010-01-08 | 2012-01-16 | Suniva Inc | Solar cell including sputtered reflective layer and method of manufacture thereof |
CN102222726A (zh) * | 2011-05-13 | 2011-10-19 | 晶澳(扬州)太阳能科技有限公司 | 采用离子注入法制作交错背接触ibc晶体硅太阳能电池的工艺 |
Non-Patent Citations (2)
Title |
---|
关旭东: "《硅集成电路工艺基础》", 31 December 2003, article "硅的热氧化生长动力学", pages: 26 * |
秦尤敏,等: "晶体硅太阳电池减反射膜的研究", 《上海有色金属》, vol. 32, no. 4, 31 December 2011 (2011-12-31), pages 179 - 181 * |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104359737A (zh) * | 2014-11-21 | 2015-02-18 | 中国科学院宁波材料技术与工程研究所 | 晶体硅体少子寿命的测试方法 |
CN104359737B (zh) * | 2014-11-21 | 2017-08-25 | 中国科学院宁波材料技术与工程研究所 | 晶体硅体少子寿命的测试方法 |
CN106435522A (zh) * | 2016-09-27 | 2017-02-22 | 中国电子科技集团公司第四十八研究所 | 晶硅太阳电池氧化铝钝化膜的pecvd沉积工艺 |
CN106435522B (zh) * | 2016-09-27 | 2019-04-12 | 中国电子科技集团公司第四十八研究所 | 晶硅太阳电池氧化铝钝化膜的pecvd沉积工艺 |
CN106783652A (zh) * | 2016-11-23 | 2017-05-31 | 浙江正泰太阳能科技有限公司 | 一种ald成膜质量的检测方法 |
CN109728104A (zh) * | 2018-12-19 | 2019-05-07 | 盐城阿特斯协鑫阳光电力科技有限公司 | 电池片钝化层中间体、太阳能电池片及其制备方法 |
CN112904173A (zh) * | 2021-01-28 | 2021-06-04 | 西安奕斯伟硅片技术有限公司 | 一种测试硅片少子寿命的方法和设备 |
CN115224153A (zh) * | 2021-03-31 | 2022-10-21 | 浙江晶科能源有限公司 | 太阳能电池片及其制备方法 |
CN115224153B (zh) * | 2021-03-31 | 2023-09-22 | 浙江晶科能源有限公司 | 太阳能电池片及其制备方法 |
CN114843369A (zh) * | 2022-04-28 | 2022-08-02 | 晶科能源(海宁)有限公司 | 一种太阳能电池制备工艺的监控方法 |
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CN102569531B (zh) | 2014-07-09 |
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Inventor after: Sun Baoming Inventor after: Gao Jifan Inventor before: Sun Baoming |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINA SOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |