CN102569530A - 一种晶体硅太阳电池背面钝化介质层局部刻蚀方法 - Google Patents
一种晶体硅太阳电池背面钝化介质层局部刻蚀方法 Download PDFInfo
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102800755A (zh) * | 2012-08-27 | 2012-11-28 | 英利能源(中国)有限公司 | 太阳能电池正面电极的制备方法 |
CN102969390A (zh) * | 2012-08-27 | 2013-03-13 | 横店集团东磁股份有限公司 | 一种太阳能晶硅电池的开窗工艺 |
CN104009100A (zh) * | 2013-02-21 | 2014-08-27 | 茂迪股份有限公司 | 太阳能电池及其制造方法与太阳能电池模块 |
CN104362189A (zh) * | 2014-10-30 | 2015-02-18 | 广东爱康太阳能科技有限公司 | 一种背面钝化太阳能电池及其制备方法 |
CN104701390A (zh) * | 2015-03-10 | 2015-06-10 | 北京七星华创电子股份有限公司 | 太阳能电池背面钝化方法 |
CN106711244A (zh) * | 2017-01-22 | 2017-05-24 | 泰州乐叶光伏科技有限公司 | Ibc电池接触开孔工艺 |
CN110350039A (zh) * | 2019-04-29 | 2019-10-18 | 南通天盛新能源股份有限公司 | 一种双面发电太阳能电池及其制备方法 |
CN111370539A (zh) * | 2020-03-19 | 2020-07-03 | 泰州中来光电科技有限公司 | 一种具有选择性发射极的太阳能电池的制备方法 |
CN114373822A (zh) * | 2022-01-11 | 2022-04-19 | 中国科学院重庆绿色智能技术研究院 | 一种具有重掺杂层谐振腔的ii类超晶格光电探测器及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101447532A (zh) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | 一种双面钝化晶体硅太阳电池的制备方法 |
CN101562217A (zh) * | 2009-05-22 | 2009-10-21 | 中国科学院电工研究所 | 一种太阳电池前电极制备方法 |
US7842596B2 (en) * | 2007-05-07 | 2010-11-30 | Georgia Tech Research Corporation | Method for formation of high quality back contact with screen-printed local back surface field |
WO2010143794A1 (ko) * | 2009-06-08 | 2010-12-16 | 제일모직 주식회사 | 도핑 기능을 갖는 에칭 페이스트 및 이를 이용한 태양전지의 선택적 에미터 형성방법 |
CN101950770A (zh) * | 2010-07-22 | 2011-01-19 | 苏州阿特斯阳光电力科技有限公司 | 一种晶体硅太阳能电池选择性发射极结构的制备方法 |
CN102290473A (zh) * | 2011-07-06 | 2011-12-21 | 中国科学院上海技术物理研究所 | 一种背面点接触晶体硅太阳电池及制备方法 |
-
2012
- 2012-02-24 CN CN201210044607.0A patent/CN102569530B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7842596B2 (en) * | 2007-05-07 | 2010-11-30 | Georgia Tech Research Corporation | Method for formation of high quality back contact with screen-printed local back surface field |
CN101447532A (zh) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | 一种双面钝化晶体硅太阳电池的制备方法 |
CN101562217A (zh) * | 2009-05-22 | 2009-10-21 | 中国科学院电工研究所 | 一种太阳电池前电极制备方法 |
WO2010143794A1 (ko) * | 2009-06-08 | 2010-12-16 | 제일모직 주식회사 | 도핑 기능을 갖는 에칭 페이스트 및 이를 이용한 태양전지의 선택적 에미터 형성방법 |
CN101950770A (zh) * | 2010-07-22 | 2011-01-19 | 苏州阿特斯阳光电力科技有限公司 | 一种晶体硅太阳能电池选择性发射极结构的制备方法 |
CN102290473A (zh) * | 2011-07-06 | 2011-12-21 | 中国科学院上海技术物理研究所 | 一种背面点接触晶体硅太阳电池及制备方法 |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102969390A (zh) * | 2012-08-27 | 2013-03-13 | 横店集团东磁股份有限公司 | 一种太阳能晶硅电池的开窗工艺 |
CN102800755A (zh) * | 2012-08-27 | 2012-11-28 | 英利能源(中国)有限公司 | 太阳能电池正面电极的制备方法 |
CN102969390B (zh) * | 2012-08-27 | 2015-03-11 | 横店集团东磁股份有限公司 | 一种太阳能晶硅电池的开窗工艺 |
TWI492400B (zh) * | 2013-02-21 | 2015-07-11 | 茂迪股份有限公司 | 太陽能電池及其製造方法與太陽能電池模組 |
CN104009100A (zh) * | 2013-02-21 | 2014-08-27 | 茂迪股份有限公司 | 太阳能电池及其制造方法与太阳能电池模块 |
CN104362189A (zh) * | 2014-10-30 | 2015-02-18 | 广东爱康太阳能科技有限公司 | 一种背面钝化太阳能电池及其制备方法 |
CN104362189B (zh) * | 2014-10-30 | 2017-03-08 | 广东爱康太阳能科技有限公司 | 一种背面钝化太阳能电池及其制备方法 |
CN104701390A (zh) * | 2015-03-10 | 2015-06-10 | 北京七星华创电子股份有限公司 | 太阳能电池背面钝化方法 |
CN104701390B (zh) * | 2015-03-10 | 2017-01-25 | 北京飞行博达电子有限公司 | 太阳能电池背面钝化方法 |
CN106711244A (zh) * | 2017-01-22 | 2017-05-24 | 泰州乐叶光伏科技有限公司 | Ibc电池接触开孔工艺 |
CN110350039A (zh) * | 2019-04-29 | 2019-10-18 | 南通天盛新能源股份有限公司 | 一种双面发电太阳能电池及其制备方法 |
CN111370539A (zh) * | 2020-03-19 | 2020-07-03 | 泰州中来光电科技有限公司 | 一种具有选择性发射极的太阳能电池的制备方法 |
CN114373822A (zh) * | 2022-01-11 | 2022-04-19 | 中国科学院重庆绿色智能技术研究院 | 一种具有重掺杂层谐振腔的ii类超晶格光电探测器及其制备方法 |
CN114373822B (zh) * | 2022-01-11 | 2023-11-28 | 中国科学院重庆绿色智能技术研究院 | 一种具有重掺杂层谐振腔的ii类超晶格光电探测器及其制备方法 |
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