CN102569511A - Texturing method of crystalline silicon solar cell - Google Patents
Texturing method of crystalline silicon solar cell Download PDFInfo
- Publication number
- CN102569511A CN102569511A CN2011104596091A CN201110459609A CN102569511A CN 102569511 A CN102569511 A CN 102569511A CN 2011104596091 A CN2011104596091 A CN 2011104596091A CN 201110459609 A CN201110459609 A CN 201110459609A CN 102569511 A CN102569511 A CN 102569511A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- silicon
- mask
- silicon chip
- silicon solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Weting (AREA)
Abstract
The invention relates to the technical field of preparation of a crystalline silicon solar cell, and particularly relates to a texturing method of the crystalline silicon solar cell. The texturing method disclosed by the invention comprises the following steps of: manufacturing a mask on the surface of a silicon sheet and then corroding a texture structure on a mask window opened on the mask through an electrochemical corrosion method of the orientation effect of a magnetic field; an electrochemical corrosion solution is composed of DMF (Dimethyl Formamide), HF (Hydrogen Fluoride) and H2O and the ratio range is that the DMF to the HF to the H2O ranges from 100: 10: 15 to 100: 5: 5. The texturing method of the crystalline silicon solar cell, disclosed by the invention, has the beneficial effects that: the electrochemical corrosion can be used for corroding crystalline silicon under the effect of the magnetic field, a surface mask layer and a damaged layer can be removed by controlling technical parameters, and a texture structure with the good perpendicularity can obtained; and the light reflectivity can be reduced by the texture structure.
Description
Technical field
The present invention relates to the preparing technical field of crystalline silicon solar cell piece, particularly a kind of crystal-silicon solar cell etching method.
Background technology
In order to improve photoelectric conversion efficiency, need to reduce light reflectivity in the crystal silicon cell technology.Existing antireflective technology mainly contains two parts and forms: antireflective coating, sunken light suede structure.Single polycrystalline battery pile face technology of preparing mainly contains wet etching and two kinds of dry etchings, and the method that has dried wet method to combine in the manufacturing industry is used for production.
The pyramid matte that monocrystalline silicon is made with the aqueous slkali anisotropic etch on (100) crystal face in the manufacturing industry; Pyramoid facet is (111) face; With the bottom surface be 54.7 °; All vertical incidence light will obtain secondary incident chance at least, and 11.1% the incident light at channel bottom will experience three incident, and overall reflectivity is lower than 20%.Monocrystalline PERL battery forms inverted pyramid (Inverted pyramid cell surface) suede structure efficient up to 24.7% by aqueous slkali in the laboratory.
Polysilicon can not utilize the anisotropic etch of aqueous slkali to form above suede structure owing to the crystal orientation reason.The corrosion of the isotropic of general using nitration mixture forms " bark shape " suede structure, reflectivity～24% in the manufacturing industry.Honeycomb (honeycomb texturing) suede structure that reports that the employing mask combines the RIE etching method to make is arranged, and conversion efficiency also can reach 19.8%.But the method is higher than complicacy and equipment cost.
Polysilicon is difficult to form the suede structure of " good more more suddenly " owing to the crystal orientation reason can not be utilized aqueous slkali anisotropic etch corrosion, causes on the whole the polysilicon anti-reflective effect short circuit current that has been worse than the single crystal silicon solar cell structure influence.
Summary of the invention
Technical problem to be solved by this invention is: a kind of crystal-silicon solar cell etching method is provided, and the suede structure of preparation, the light that effectively reduces the polycrystal silicon cell surface reflects.
The present invention solves the scheme that its technical problem adopts: a kind of crystal-silicon solar cell etching method; Make mask at silicon chip surface; The mask window of on mask, opening then; Electrochemical etching method through the field orientation effect erodes away suede structure again, and electrochemical corrosive liquid is made up of DMF, HF and H2O, its proportion 100DMF: 10HF: 15H2O to 100DMF: 5HF: 5H2O.
Have the step of being prepared as follows: a. is with the silicon chip surface cleaning polishing; B. at silicon chip surface deposition one deck silicon nitride film; C. silk screen printing one deck corrosivity slurry obtains defined mask pattern on the silicon nitride film surface; D. silicon chip is carried out electrochemical corrosion.
Following preparation process: a. is arranged with the silicon chip surface cleaning polishing; B. at silicon chip surface deposition one deck silicon nitride film; C. at silicon chip surface deposition one deck silicon oxide film, obtain mask pattern after the photoetching; D. carry out the RCA cleaning after adopting SPA to erode away mask pattern; E. silicon chip is carried out electrochemical corrosion.
The electrochemical corrosion current density is 0.01～100mA/cm2.
Magnetic field intensity 5-500mT.
The magnetic field line inceptive direction receives the pattern adjustment to require between vertical and parallel direction, to adjust perpendicular to the sense of current.
The invention has the beneficial effects as follows: electrochemical corrosion is corroded crystalline silicon under the action of a magnetic field; Obtain the good suede structure of up rightness when can remove surperficial mask layer and affected layer to control of process parameters, this structure can reduce light reflectivity.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is further specified;
Fig. 1 is the sketch map of mask mode one of the present invention;
Fig. 2 is the sketch map of mask mode two of the present invention;
Fig. 3 is the principle schematic of electrochemical corrosion making herbs into wool of the present invention;
Among the figure, 1. silicon chip, 2. mask.
Embodiment
Embodiment 1:
Like Fig. 1, shown in 2 and 3, at first the silicon chip surface cleaning polishing is removed surface damage layer and obtain more smooth surface and be beneficial to masking effect in order to prepare the antiradar reflectivity suede structure.Secondly deposit one deck silicon nitride film at silicon chip surface with PECVD, thickness is adjusted according to follow-up masking effect demand.Silk screen printing one deck corrosivity slurry obtains defined mask pattern on the silicon nitride film surface then, and left silicon nitride film masking layer has two kinds of existing waies to be respectively mask mode one, mask mode two; At last silicon chip is carried out electrochemical corrosion, wherein electrochemical corrosive liquid is made up of DMF, HF and H2O, its proportion 100DMF: 10HF: 15H2O to 100DMF: 5HF: 5H2O, and the electrochemical corrosion current density is 0.01～100mA/cm2; The magnetic field line inceptive direction receives the pattern adjustment to require between vertical and parallel direction, to adjust magnetic field intensity 5-500mT perpendicular to the sense of current.Magnetic field has orientation to solion makes the electrochemical corrosion of isotropic possess the etching characteristic of certain anisotropic; Different corrosion rates is arranged in different directions, and electrochemical etching method erodes away simultaneously and falls into the light suede structure removing surperficial mask layer.The matte that final corresponding mask mode one obtains is the good convex hillock of a up rightness structure.The matte that corresponding mask mode two obtains is the good depth-width ratio of up rightness greater than 1.5 groove suede structure.
Embodiment 2:
At first the silicon chip surface cleaning polishing is removed surface damage layer and obtain more smooth surface and be beneficial to masking effect in order to prepare the antiradar reflectivity suede structure.Secondly deposit one deck silicon nitride film at silicon chip surface with PECVD, thickness is adjusted according to follow-up masking effect demand.Then at silicon chip surface deposition one deck silicon oxide film; Obtain mask pattern after the photoetching, the following adopted SPA erodes away and carries out RCA behind the mask pattern and clean the silicon nitride film masking layer that finally stays and have two kinds of existing waies to be respectively mask mode one, mask mode two; At last silicon chip is carried out electrochemical corrosion, wherein electrochemical corrosive liquid is made up of DMF, HF and H2O, its proportion 100DMF: 10HF: 15H2O to 100DMF: 5HF: 5H2O, and the electrochemical corrosion current density is 0.01～100mA/cm2; The magnetic field line inceptive direction receives the pattern adjustment to require between vertical and parallel direction, to adjust magnetic field intensity 5-500mT perpendicular to the sense of current.Magnetic field has orientation to solion makes the electrochemical corrosion of isotropic possess the etching characteristic of certain anisotropic, and different corrosion rates is arranged in different directions.The matte that final corresponding mask mode one obtains is the good convex hillock of a up rightness structure.The matte that corresponding mask mode two obtains is the good depth-width ratio of up rightness greater than 1.5 groove suede structure.
Claims (6)
1. crystal-silicon solar cell etching method; It is characterized in that: make mask at silicon chip surface; The mask window of on mask, opening then; Electrochemical etching method through the field orientation effect erodes away suede structure again, and electrochemical corrosive liquid is made up of DMF, HF and H2O, its proportion 100DMF: 10HF: 15H2O to 100DMF: 5HF: 5H2O.
2. crystal-silicon solar cell etching method according to claim 1 is characterized in that: have the step of being prepared as follows: a. is with the silicon chip surface cleaning polishing; B. at silicon chip surface deposition one deck silicon nitride film; C. silk screen printing one deck corrosivity slurry obtains defined mask pattern on the silicon nitride film surface; D. silicon chip is carried out electrochemical corrosion.
3. crystal-silicon solar cell etching method according to claim 1 is characterized in that: following preparation process: a. is arranged with the silicon chip surface cleaning polishing; B. at silicon chip surface deposition one deck silicon nitride film; C. at silicon chip surface deposition one deck silicon oxide film, obtain mask pattern after the photoetching; D. carry out the RCA cleaning after adopting SPA to erode away mask pattern; E. silicon chip is carried out electrochemical corrosion.
4. according to claim 1 or 2 or 3 described crystal-silicon solar cell etching methods, it is characterized in that: the electrochemical corrosion current density is 0.01～100mA/cm2.
5. according to claim 1 or 2 or 3 described crystal-silicon solar cell etching methods, it is characterized in that: magnetic field intensity 5-500mT.
6. according to claim 1 or 2 or 3 described crystal-silicon solar cell etching methods, it is characterized in that: the magnetic field line inceptive direction receives the pattern adjustment to require between vertical and parallel direction, to adjust perpendicular to the sense of current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104596091A CN102569511A (en) | 2011-12-31 | 2011-12-31 | Texturing method of crystalline silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104596091A CN102569511A (en) | 2011-12-31 | 2011-12-31 | Texturing method of crystalline silicon solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102569511A true CN102569511A (en) | 2012-07-11 |
Family
ID=46414459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011104596091A Pending CN102569511A (en) | 2011-12-31 | 2011-12-31 | Texturing method of crystalline silicon solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102569511A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102974565A (en) * | 2012-12-12 | 2013-03-20 | 天津中环领先材料技术有限公司 | Method for cleaning monocrystalline silicon polished wafer |
| CN104952947A (en) * | 2015-05-14 | 2015-09-30 | 陕西师范大学 | Current-aided aluminum-doped zinc oxide film chemical texturing method |
| CN110144588A (en) * | 2019-04-24 | 2019-08-20 | 深圳市华星光电技术有限公司 | Etching liquid and lithographic method |
| CN111040766A (en) * | 2019-12-25 | 2020-04-21 | 中国科学院电工研究所 | Polycrystalline silicon wafer texturing solution, preparation method of black silicon material and application of black silicon material in accelerating PERC battery LeTID recovery |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1631764A (en) * | 2004-12-28 | 2005-06-29 | 上海纳晶科技有限公司 | Electrochemical deep etching method and apparatus thereof |
| CN101587919A (en) * | 2009-04-02 | 2009-11-25 | 常州天合光能有限公司 | Method for manufacturing selective emitter junction of multricrytalline silicon solar cell |
| US20100108130A1 (en) * | 2008-10-31 | 2010-05-06 | Crystal Solar, Inc. | Thin Interdigitated backside contact solar cell and manufacturing process thereof |
| CN101866842A (en) * | 2010-05-07 | 2010-10-20 | 武汉理工大学 | Method of performing electrochemical corrosion with the help of silicon-based three-dimensional structure magnetic field |
-
2011
- 2011-12-31 CN CN2011104596091A patent/CN102569511A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1631764A (en) * | 2004-12-28 | 2005-06-29 | 上海纳晶科技有限公司 | Electrochemical deep etching method and apparatus thereof |
| US20100108130A1 (en) * | 2008-10-31 | 2010-05-06 | Crystal Solar, Inc. | Thin Interdigitated backside contact solar cell and manufacturing process thereof |
| CN101587919A (en) * | 2009-04-02 | 2009-11-25 | 常州天合光能有限公司 | Method for manufacturing selective emitter junction of multricrytalline silicon solar cell |
| CN101866842A (en) * | 2010-05-07 | 2010-10-20 | 武汉理工大学 | Method of performing electrochemical corrosion with the help of silicon-based three-dimensional structure magnetic field |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102974565A (en) * | 2012-12-12 | 2013-03-20 | 天津中环领先材料技术有限公司 | Method for cleaning monocrystalline silicon polished wafer |
| CN104952947A (en) * | 2015-05-14 | 2015-09-30 | 陕西师范大学 | Current-aided aluminum-doped zinc oxide film chemical texturing method |
| CN104952947B (en) * | 2015-05-14 | 2017-04-12 | 陕西师范大学 | Current-aided aluminum-doped zinc oxide film chemical texturing method |
| CN110144588A (en) * | 2019-04-24 | 2019-08-20 | 深圳市华星光电技术有限公司 | Etching liquid and lithographic method |
| CN111040766A (en) * | 2019-12-25 | 2020-04-21 | 中国科学院电工研究所 | Polycrystalline silicon wafer texturing solution, preparation method of black silicon material and application of black silicon material in accelerating PERC battery LeTID recovery |
| CN111040766B (en) * | 2019-12-25 | 2021-05-25 | 中国科学院电工研究所 | Polycrystalline silicon wafer texturing solution, preparation method of black silicon material and application of black silicon material in accelerating PERC battery LeTID recovery |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101976701B (en) | Manufacturing method of back passivation cell | |
| CN104934500A (en) | Method for preparing back-surface passivation crystalline silicon solar cell with selective emitter | |
| JP2004235274A (en) | Polycrystalline silicon substrate and method of roughing its surface | |
| CN104362221B (en) | A kind of preparation method of the polycrystalline silicon solar cell of RIE making herbs into wool | |
| CN110571304A (en) | Manufacturing method of passivated contact double-sided solar cell | |
| CN103594529A (en) | MWT and passivation combined crystal silicon solar cell and manufacturing method thereof | |
| CN102362356A (en) | Method for roughening substrate surface and method for manufacturing photovoltaic device | |
| CN104576813B (en) | A kind of nanostructured matte on photoelectric material surface and preparation method thereof | |
| CN102569511A (en) | Texturing method of crystalline silicon solar cell | |
| CN102339902A (en) | Method for making p-type solar battery by mask diffusion method and structure of p-type solar battery | |
| CN103022262A (en) | Preparation method of back point contact solar cell | |
| EP4318600A1 (en) | Texture structure of solar cell and preparation method therefor | |
| CN103117330B (en) | A kind of preparation method of solar cell | |
| CN103337561A (en) | Fabrication method of surface fields of full-back-contact solar cell | |
| CN103594530A (en) | Crystalline silicon solar cell combining obverse side thermal oxidation, selective emitter junctions and reverse passivation and manufacturing method thereof | |
| CN103050573B (en) | A kind of preparation method carrying on the back passivation cell | |
| CN103531657A (en) | Preparation method for polycrystal/monocrystal-like solar cell selective emitting electrode structure | |
| CN107611226A (en) | A kind of crystalline silicon method for manufacturing textured surface, solar cell and preparation method thereof | |
| CN104716209A (en) | Solar cell based on silicon substrate nanowire and preparing method thereof | |
| CN203674218U (en) | Crystalline silicon solar cell integrating MWP and passive emitter and rear cell technologies | |
| CN103078008B (en) | A kind of preparation method of back side point contact of crystalline silicon | |
| CN101958364B (en) | Method for producing solar battery with passivated back | |
| CN111640807B (en) | Texturing sheet with V-shaped groove suede structure and preparation method and application thereof | |
| CN104009119A (en) | Method for manufacturing P type crystalline silicon grooved buried-contact battery | |
| CN102176491A (en) | Process for manufacturing buried solar cell by plasma etching and slotting |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120711 |