CN102569258A - Sample structure and measuring method for CDSEM (critical dimension scanning electronic microscope) - Google Patents
Sample structure and measuring method for CDSEM (critical dimension scanning electronic microscope) Download PDFInfo
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- CN102569258A CN102569258A CN201010580636XA CN201010580636A CN102569258A CN 102569258 A CN102569258 A CN 102569258A CN 201010580636X A CN201010580636X A CN 201010580636XA CN 201010580636 A CN201010580636 A CN 201010580636A CN 102569258 A CN102569258 A CN 102569258A
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Abstract
The invention provides a sample structure and a measuring method for a CDSEM (critical dimension scanning electronic microscope). The method comprises the steps as follows: an auxiliary pattern in a fixed position is added on a sample; when the CD (critical dimension) of the sample is measured, the auxiliary pattern is captured and set as a template, so that the relationship between a relative position coordinate of the auxiliary pattern and a to-be-measured pattern on the sample can be built and a CD recipe can be set, as a result, when the to-be-measured pattern is measured, the auxiliary pattern can be found on the sample through the CDSEM; and the coordinate of the auxiliary pattern is taken as a reference, the accurate positioning of the to-be-measured pattern and the CD recipe can be used repeatedly as per relationship of the relative position coordinate of the auxiliary pattern and the to-be-measured pattern on the sample, and the measurement efficiency of the CDSEM is improved.
Description
Technical field
The present invention relates to the equipment technical field in the semiconductor fabrication process, particularly a kind of critical size scanning electron microscopy (Critical Dimension Scanning Electronic Microscope, sample structure CDSEM) and method of measurement.
Background technology
At present; In semiconductor device is made; Adopt the critical size scanning electron microscopy (CriticalDimension Scanning Electronic Microscope, CDSEM) measure the critical size that is produced on the pattern on the wafer (Critical Dimension, CD).Along with the development of semiconductor fabrication, the CD of semiconductor device is more and more littler.Accuracy for pattern on the wafer after the assurance photoetching; Through exposure imaging with after the design transfer on the light shield is to the wafer; The wafer that has pattern can be placed on the CDSEM board, and by the CD of pattern after the CDSEM control system control CDSEM board measurement photoetching, the CDSEM board feeds back to the CDSEM control system with the CD of the pattern that obtains; Whether the CD to confirm pattern meets large scale integrated circuit (IC) designing requirement, thereby understands the accuracy of photoetching.In semiconductor device was made, that of greatest concern was the CD of some specific pattern on the wafer, the CD of through hole (hole), device widths (line) and device pitch (space) pattern for example, and these specific patterns are defined as pattern to be measured.With the hole pattern is that pattern to be measured is an example; Usually, the pattern to be measured on the wafer is according to the size of spacing distance (pitch), such as the size according to hole and hole spacing; The hole pattern that will have identical pitch is divided into a zone, and different pitch are corresponding zones of different respectively.
In the prior art, as shown in Figure 1, CDSEM is following to the step of the CD method of measurement of pattern on the wafer:
Certain regional characteristic pattern on step 101, the selection wafer, the recording feature pattern is as template;
In this step; After wafer is put into the CDSEM board, at first to select to grasp certain regional characteristic pattern on the wafer through CDSEM control system control CDSEM board, concrete can grasping has the characteristic pattern that can recognize with distinguishing characteristics; Then; The characteristic pattern that grasps is deposited in the CDSEM control system as template, and this step is a prior art, repeats no more.
In this step; CD with the hole pattern is measured as example; Through CDSEM control system control CDSEM board, in the wafer pattern of identical pitch, find a hole pattern as reference pattern, confirm the relative position coordinates between reference pattern and the characteristic pattern by prior art; Needs according to reference pattern CD measures are reference pattern CD measurement configuration corresponding C DSEM board Control Parameter, measure recipe as CD and are stored in the CDSEM control system; The CDSEM board Control Parameter that CD measures among the recipe comprises: the angle that the probe of CDSEM board moves in the CD measuring process, the degree of depth, distance etc.; Wherein, The distance that probe moves is meant the distance between reference pattern and the characteristic pattern; The step of configuration CDSEM board Control Parameter is a prior art, and this repeats no more.
In this step; By pattern on the CDSEM control system control CDSEM board scanning wafer; Find out first pattern identical, it should be noted that first pattern can be that characteristic pattern also can be other figures identical with die plate pattern except characteristic pattern with template; Coordinate with first pattern is that initial point positions, and when the coordinate that begins displacement from initial point is the relative position coordinates of reference pattern and characteristic pattern, just navigates to the position of the first hole pattern to be measured; In the zone of identical pitch; Because particularity and repeatability that semiconductor technology is made; First pattern on the wafer is identical with the relative position coordinates between characteristic pattern and the reference pattern with relative position coordinates between the first hole pattern to be measured, and the relative position coordinates that therefore can reuse between characteristic pattern and the reference pattern is located the first hole pattern to be measured.The CD of the first hole pattern to be measured measures and adopts the CD that sets up in the step 102 to measure recipe; The CDSEM control system can be measured the CDSEM board Control Parameter among the recipe according to the CD of storage; Control CDSEM board is accomplished the whole C D measuring process of the first hole pattern to be measured; The CD data of the CDSEM board first hole pattern to be measured that will obtain feed back to the CDSEM control system then, can confirm whether the CD of the first hole pattern to be measured meets the IC designing requirement through the CDSEM control system.In the wafer pattern zone of identical pitch, only need repeating step 103, the CD that just can accomplish other hole patterns to be measured measures.
Because different semiconductor fabrication process are different with the IC design; Pattern to be measured on the same wafer is divided into zones of different according to the difference of pitch; With the hole pattern is example, and the hole in the zones of different is different with the spacing of hole, and the spacing of other patterns is also different on hole and the wafer.In the prior art, the method that CDSEM measures CD has following defective, on the one hand, often can't in the zone of different pitch, find first pattern identical with die plate pattern; On the other hand, even find first pattern identical with die plate pattern, but because the difference of wafer pattern pitch; Relative position coordinates between first figure and the pattern to be measured also can change; Therefore can't use the accurate location pattern to be measured of relative position coordinates between reference pattern and the characteristic pattern, also just can't accurately measure the CD of the pattern to be measured in the wafer pattern zone of different pitch, based on above-mentioned two aspects; When measuring the CD of pattern to be measured; Often need manually pick up the tram of pattern to be measured, set up new recipe, reduce the efficient of CDSEM.
Summary of the invention
In view of this, the technical problem that the present invention solves is: in the CD of critical size scanning electron microscopy measuring process, often need manual operations location pattern to be measured, reduced the efficiency of measurement of CDSEM.
For addressing the above problem, technical scheme of the present invention specifically is achieved in that
A kind of sample structure of critical size scanning electron microscopy, this sample structure comprises:
Auxiliary patterns and pattern to be measured, and the relative position coordinates of said auxiliary patterns and pattern to be measured immobilizes.
Said auxiliary patterns is cross, rectangle, circle or triangle.
The spacing of said auxiliary patterns and said pattern to be measured is smaller or equal to 10 microns.
Said auxiliary patterns is 50 to 5000 nanometers along the maximum length scope of x axle or y axle.
A kind of method of measurement of critical size scanning electron microscopy; Measurement has the sample of said auxiliary patterns; After critical size scanning electron microscopy board grasped said auxiliary patterns, the relative position coordinates of pattern to be measured and said auxiliary patterns is set up and stored to the said auxiliary patterns of record as template in critical size scanning electron microscopy control system; And the critical size that pattern to be measured is set measures prescription, and this method also comprises:
Critical size scanning electron microscopy control system is controlled said critical size scanning electron microscopy board and on said sample, is found said auxiliary patterns according to the figure of said template; According to the relative position coordinates of said pattern to be measured and said auxiliary patterns, be the initial point of reference coordinate with the coordinate of said auxiliary patterns, locate pattern to be measured; Measure the critical size of the prescription said critical size scanning electron microscopy measurement of control pattern to be measured according to the critical size of said pattern to be measured.
Visible by above-mentioned technical scheme; The invention provides a kind of sample structure and method of measurement of critical size scanning electron microscopy; After adding the auxiliary patterns of a fixed-site on the sample; According to the accurate location that the relative position relation of auxiliary patterns and pattern to be measured is realized pattern to be measured, improved the efficient that the sample critical size is measured.
Description of drawings
Fig. 1 be in the prior art CDSEM to the flow chart of the CD method of measurement of pattern on the wafer;
Fig. 2 is the auxiliary patterns sketch map on the present invention's wafer to be measured;
Fig. 3 is the flow chart of CDSEM of the present invention to the CD method of measurement of pattern on the wafer.
Embodiment
For make the object of the invention, technical scheme, and advantage clearer, below with reference to the accompanying drawing embodiment that develops simultaneously, to further explain of the present invention.
A kind of sample structure of critical size scanning electron microscopy and method of measurement.
In the manufacturing process of light shield, at first on light shield, add an auxiliary patterns, the relation of the relative position coordinates of other patterns on this auxiliary patterns and the light shield can be obtained by the IC design data that provides in the prior art.
In the present embodiment, the sample of critical size scanning electron microscopy measurement is a wafer, and the pattern on this wafer is through exposure imaging, and the design transfer on the light shield is obtained to the wafer.Pattern on the wafer except the same with prior art have with the corresponding pattern of IC design data, also have auxiliary patterns, this auxiliary patterns can be cross, rectangle, any recognizable figures such as circle or triangle.In the present embodiment; As shown in Figure 2, this auxiliary patterns 201 is a decussate texture, and auxiliary patterns 201 is smaller or equal to 10 microns with the spacing range of pattern to be measured; For example; 1 micron, 5 microns and 10 microns, be included in CD with distance between assurance auxiliary patterns 201 and pattern to be measured and measure in the scope of the probe displacement that can be provided with in the prescription (recipe); To guarantee also that simultaneously the pattern position that the position of auxiliary patterns 201 on wafer 200 can be not corresponding with IC design data in the prior art is overlapping, destroy original IC design.Auxiliary patterns 201 is 50 to 5000 nanometers along the maximum length scope of x axle or y axle, for example, 50 nanometers, 2000 nanometers and 5000 nanometers, wherein, the x axle is corresponding to laterally, and the y axle is corresponding to vertically.
As shown in Figure 3, a kind of step of method of measurement of critical size scanning electron microscopy is following among the present invention:
In the present embodiment, be pattern to be measured with the hole pattern on the wafer 200.In this step, after wafer 200 is put into the CDSEM board, at first grasp the auxiliary patterns 201 on the wafer 200 through CDSEM control system control CDSEM board; In the present embodiment; Grasp the auxiliary patterns 201 of the decussate texture on the wafer 200, then, this auxiliary patterns 201 is deposited in the CDSEM control system as template; The operating procedure of concrete extracting auxiliary patterns 201 is a prior art, repeats no more;
In this step, according to the needs that CD measures, configuration corresponding C DSEM board Control Parameter is measured prescription as CD in the CDSEM control system, comprising, this step is a prior art, this repeats no more.
In this step; CD with a hole pattern 202 on the wafer is measured as example, at first by the first pattern on the scanning wafer 200 of CDSEM control system, is reference with the figure of template; On wafer 200, search the pattern identical with the figure of template; Wherein, because the figure of template is exactly the figure of the auxiliary patterns 201 of extracting, therefore the pattern identical with image template that find is exactly auxiliary patterns 201 on wafer 200; Then; With the coordinate of auxiliary patterns 201 as reference coordinate, according to the relative position coordinates of hole pattern 202 with auxiliary patterns 201, the exact position of location hole pattern; Wherein, The relative position coordinates of hole pattern 202 and auxiliary patterns 201 is to be obtained by the IC design data that provides in the prior art, and is stored in the CDSEM machine control system; In the semiconductor fabrication process process, IC design data and design rule (Design Rule) decision that the pattern on the light shield is provided by the client, among the present invention, the particular location coordinate of auxiliary patterns 201 also is changeless.Therefore, the design transfer on light shield was to 200 last times of wafer, and the hole pattern can not change because of the different of pitch with relative position coordinates between the auxiliary patterns 201.Therefore, each hole pattern can be an initial point by reference coordinate, accurately locatees through the displacement realization of relative position coordinates.
In this step, the CDSEM machine control system is measured the CDSEM board Control Parameter in the prescription according to CD, and control CDSEM board is realized the measurement of hole pattern 202CD, thereby has improved the CD efficiency of measurement of CDSEM greatly.
To all patterns to be measured on the wafer, only need repeating step 303 and step 304, different patterns to be measured is carried out the CD measurement get final product.
The invention provides a kind of sample structure of critical size scanning electron microscopy; This sample has auxiliary patterns and pattern to be measured, and auxiliary patterns is with respect to the fixed-site of pattern to be measured, when the coordinate with this auxiliary patterns is reference coordinate; Just can be according to the relative position coordinates relation of reference coordinate and sample pattern to be measured; Realize the location of pattern to be measured, shortened the positioning time of pattern to be measured greatly, improved the CD efficiency of measurement of CDSEM.
The invention provides a kind of method of measurement of critical size scanning electron microscopy, this method because the pattern of template is exactly the auxiliary patterns that grasps, the situation of identical figure therefore can not occur finding on the one hand; On the other hand; Because the relative position coordinates of pattern to be measured and auxiliary patterns is just confirmed on the sample; So the position with auxiliary patterns is a reference coordinate, just can realizes the accurate location of pattern to be measured, and need not manual positioning according to the relative position coordinates of pattern to be measured and auxiliary patterns; Shorten the positioning time of pattern to be measured greatly, improved the CD efficiency of measurement of CDSEM.
The above is merely preferred embodiment of the present invention, and is in order to restriction the present invention, not all within spirit of the present invention and principle, any modification of being made, is equal to replacement, improvement etc., all should be included within the scope that the present invention protects.
Claims (5)
1. the sample structure of a critical size scanning electron microscopy is characterized in that, this sample structure comprises:
Auxiliary patterns and pattern to be measured, and the relative position coordinates of said auxiliary patterns and pattern to be measured immobilizes.
2. structure according to claim 1 is characterized in that, said auxiliary patterns is cross, rectangle, circle or triangle.
3. structure according to claim 1 is characterized in that the spacing of said auxiliary patterns and said pattern to be measured is smaller or equal to 10 microns.
4. structure according to claim 1 is characterized in that, said auxiliary patterns is 50 to 5000 nanometers along the maximum length scope of x axle or y axle.
5. the method for measurement of a critical size scanning electron microscopy; Measure sample according to claim 1, it is characterized in that, after critical size scanning electron microscopy board grasps said auxiliary patterns; The said auxiliary patterns of record is as template in critical size scanning electron microscopy control system; The relative position coordinates of setting up and storing pattern to be measured and said auxiliary patterns, and the critical size that pattern to be measured is set measures and writes out a prescription, this method also comprises:
Critical size scanning electron microscopy control system is controlled said critical size scanning electron microscopy board and on said sample, is found said auxiliary patterns according to the figure of said template; According to the relative position coordinates of said pattern to be measured and said auxiliary patterns, be the initial point of reference coordinate with the coordinate of said auxiliary patterns, locate pattern to be measured; Measure the critical size of the prescription said critical size scanning electron microscopy measurement of control pattern to be measured according to the critical size of said pattern to be measured.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103837105A (en) * | 2012-11-23 | 2014-06-04 | 中芯国际集成电路制造(上海)有限公司 | Critical size measuring method |
| CN104752251A (en) * | 2013-12-30 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Method for testing graphics through CDSEM (Critical Dimension Scanning Electronic Microscope) |
| CN105628722A (en) * | 2014-10-29 | 2016-06-01 | 中芯国际集成电路制造(上海)有限公司 | Measurement structure and method for measuring measurement structure |
| CN109148433A (en) * | 2017-06-16 | 2019-01-04 | 睿励科学仪器（上海）有限公司 | Method and apparatus for determining the size of integrated circuit device |
| CN109186762A (en) * | 2018-09-30 | 2019-01-11 | 中国科学院西安光学精密机械研究所 | Method for determining coded image data area and coding template |
| CN109540050A (en) * | 2017-09-22 | 2019-03-29 | 三星电子株式会社 | Critical size measuring system and the method for measuring critical size using it |
| CN112863980A (en) * | 2021-01-05 | 2021-05-28 | 长江存储科技有限责任公司 | Calibration method and calibration device for characteristic dimension scanning electron microscope machine |
| WO2021190248A1 (en) * | 2020-03-24 | 2021-09-30 | 长鑫存储技术有限公司 | Table matching detection method and system, and early warning method and system |
| CN114088982A (en) * | 2021-11-24 | 2022-02-25 | 胜科纳米(苏州)股份有限公司 | Method and system for SCM section sample nondestructive positioning |
| CN115628685A (en) * | 2022-08-15 | 2023-01-20 | 魅杰光电科技(上海)有限公司 | Method and equipment for measuring critical dimension and method for positioning critical dimension in grading manner |
| CN118365692A (en) * | 2024-06-14 | 2024-07-19 | 深圳市辰中科技有限公司 | Method and apparatus for measuring critical dimension of repeated graphic unit of memory |
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Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103837105B (en) * | 2012-11-23 | 2016-09-28 | 中芯国际集成电路制造(上海)有限公司 | The measuring method of critical size |
| CN103837105A (en) * | 2012-11-23 | 2014-06-04 | 中芯国际集成电路制造(上海)有限公司 | Critical size measuring method |
| CN104752251A (en) * | 2013-12-30 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Method for testing graphics through CDSEM (Critical Dimension Scanning Electronic Microscope) |
| CN104752251B (en) * | 2013-12-30 | 2018-02-16 | 中芯国际集成电路制造(上海)有限公司 | Using the method for CDSEM resolution charts |
| CN105628722B (en) * | 2014-10-29 | 2019-01-08 | 中芯国际集成电路制造(上海)有限公司 | Measurement structure and the measurement method that measurement structure is measured |
| CN105628722A (en) * | 2014-10-29 | 2016-06-01 | 中芯国际集成电路制造(上海)有限公司 | Measurement structure and method for measuring measurement structure |
| CN109148433B (en) * | 2017-06-16 | 2021-06-04 | 睿励科学仪器（上海）有限公司 | Method and apparatus for determining dimensions of an integrated circuit device |
| CN109148433A (en) * | 2017-06-16 | 2019-01-04 | 睿励科学仪器（上海）有限公司 | Method and apparatus for determining the size of integrated circuit device |
| CN109540050B (en) * | 2017-09-22 | 2022-05-24 | 三星电子株式会社 | Critical dimension measuring system and method for measuring critical dimension using the same |
| CN109540050A (en) * | 2017-09-22 | 2019-03-29 | 三星电子株式会社 | Critical size measuring system and the method for measuring critical size using it |
| US11397380B2 (en) | 2017-09-22 | 2022-07-26 | Samsung Electronics Co., Ltd. | Critical dimension measurement system and method of measuring critical dimensions using same |
| CN109186762B (en) * | 2018-09-30 | 2023-09-01 | 中国科学院西安光学精密机械研究所 | Method for determining coding image data area and coding template |
| CN109186762A (en) * | 2018-09-30 | 2019-01-11 | 中国科学院西安光学精密机械研究所 | Method for determining coded image data area and coding template |
| WO2021190248A1 (en) * | 2020-03-24 | 2021-09-30 | 长鑫存储技术有限公司 | Table matching detection method and system, and early warning method and system |
| CN112863980B (en) * | 2021-01-05 | 2022-04-12 | 长江存储科技有限责任公司 | Calibration method and calibration device for characteristic dimension scanning electron microscope machine |
| CN112863980A (en) * | 2021-01-05 | 2021-05-28 | 长江存储科技有限责任公司 | Calibration method and calibration device for characteristic dimension scanning electron microscope machine |
| CN114088982A (en) * | 2021-11-24 | 2022-02-25 | 胜科纳米(苏州)股份有限公司 | Method and system for SCM section sample nondestructive positioning |
| CN115628685A (en) * | 2022-08-15 | 2023-01-20 | 魅杰光电科技(上海)有限公司 | Method and equipment for measuring critical dimension and method for positioning critical dimension in grading manner |
| CN115628685B (en) * | 2022-08-15 | 2024-03-26 | 魅杰光电科技(上海)有限公司 | Method and equipment for measuring critical dimension and method for classifying and positioning critical dimension |
| CN118365692A (en) * | 2024-06-14 | 2024-07-19 | 深圳市辰中科技有限公司 | Method and apparatus for measuring critical dimension of repeated graphic unit of memory |
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