CN115877036A - Line width standard sample wafer and tracking method of standard lines thereof - Google Patents

Line width standard sample wafer and tracking method of standard lines thereof Download PDF

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Publication number
CN115877036A
CN115877036A CN202211557069.5A CN202211557069A CN115877036A CN 115877036 A CN115877036 A CN 115877036A CN 202211557069 A CN202211557069 A CN 202211557069A CN 115877036 A CN115877036 A CN 115877036A
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standard
preset
magnification
line
tracking
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罗锦晖
彭子倩
王珩
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709th Research Institute of CSSC
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709th Research Institute of CSSC
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Priority to CN202211557069.5A priority Critical patent/CN115877036A/en
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Abstract

The invention provides a line width standard sample wafer and a tracking method of a standard line thereof, belonging to the technical field of micro-nano line width measuring instrument calibration, wherein the method comprises the following steps: searching a tracking arrow in the line width standard sample under the view field of a microscope at a first preset magnification; increasing the magnification of the microscope to a second preset magnification, and searching for a positioning mark according to the direction indicated by the tracking arrow; and increasing the magnification of the microscope according to the corresponding relation between the positioning mark and the standard line to be searched, and moving the microscope along the preset direction until the standard line to be searched is observed. According to the invention, the standard lines are positioned and indicated step by step and step by step through the tracking arrows and the positioning marks, so that the nanoscale standard lines can be quickly found in the line width standard sample wafer, and the quick calibration of the scanning electron microscope is realized.

Description

Line width standard sample wafer and tracking method of standard lines thereof
Technical Field
The invention belongs to the technical field of micro-nano line width measuring instrument calibration, and particularly relates to a line width standard sample wafer and a tracking method of a standard line of the line width standard sample wafer.
Background
Critical Dimension (CD) refers to a special line pattern designed to reflect the line width of the features of an integrated circuit in the process of manufacturing a photomask of an integrated circuit and photolithography to evaluate and control the image processing precision of the process. In short, the critical dimension is the smallest width line in an integrated circuit, which is an important measure for the level of manufacturing and design of the integrated circuit, and the smaller the critical dimension, the higher the integration of the chip.
With the rapid development of nanotechnology and life science, more and more critical dimension measuring instruments are applied to the process quality control of advanced scientific research, product design and large-scale production. The critical dimension measuring instrument mainly comprises: scanning Electron Microscopes (SEM), atomic Force Microscopes (AFM), optical critical dimension measurement systems (OCD), and the like. Among them, the most widely used is the scanning electron microscope.
In view of the importance of critical dimension measuring instruments. Many technical institutions at home and abroad develop research work of related instrument calibration technology, the current mainstream calibration scheme is that a line width standard sample wafer with a single line is used for calibrating related instruments, but under the condition of observing the standard line, the view field size of a microscope is only one hundred million of the actual size of the line width standard sample wafer, and a scanning electron microscope is directly used for searching the standard line on the line width standard sample wafer just like a sea fishing needle.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a standard sample wafer with line width and a tracking method of the standard line, and aims to solve the problem that the standard line is difficult to find on the standard sample wafer with line width by using a scanning electron microscope.
To achieve the above object, in one aspect, the present invention provides a line width master, including: the device comprises a sample film, an indication mark and a plurality of groups of standard lines with different nominal values;
the indication mark and a plurality of groups of standard lines with different nominal values are drawn on the sample negative film;
the indicating mark is used for indicating the position of the standard line in the sample film;
the indication mark comprises a tracking arrow, a positioning mark and an indication scale;
the tracking arrow is used for marking the direction of the standard line under a first preset magnification; the positioning mark is drawn in the preset direction indicated by the tracking arrow and used for marking the position of the standard line under a second preset magnification; the second preset amplification factor is larger than the first preset amplification factor; the indicating scale is drawn in the preset direction of the positioning mark, and different coordinates of the indicating scale correspondingly point to standard lines with different nominal values.
Further preferably, the tracking arrows include a plurality of sets of arrows pointing from different directions to the area where the standard line is located.
Further preferably, the positioning marks comprise a plurality of sets of marks with different line numbers, and the different line marks correspond to standard lines pointing to different nominal values.
Further preferably, the first preset magnification is 20 times; the second preset magnification is 1000 times.
On the other hand, the invention provides a tracking method of standard lines of a standard sample wafer with line width, which comprises the following steps:
s1: searching a tracking arrow in the online wide standard sample under the visual field of a microscope at a first preset magnification;
s2: searching a positioning mark according to a preset direction indicated by a tracking arrow; the preset direction is the direction of the area where the standard line indicated by the tracking arrow is located;
s3: and moving along the preset direction according to the positioning mark until the standard line to be searched is observed.
Further preferably, S2 specifically includes the following steps:
s2.1: moving the center of a view field of the microscope to the area of the standard line to be searched along the preset direction according to the preset direction of the area of the standard line to be searched indicated by the tracking arrow, and increasing the magnification of the microscope to a second preset magnification; wherein the second preset magnification is greater than the first preset magnification;
s2.2: and under the visual field of a second preset magnification, searching the positioning mark according to the preset direction of the tracking arrow, and moving the searched positioning mark to the center of the visual field of the microscope.
Further preferably, S3 specifically includes the following steps:
s3.1: searching the position of the first coordinate in the line width standard sample according to the corresponding relation between the positioning mark and the standard line to be searched; the first coordinate is a coordinate corresponding to a standard line to be searched in the indicating scale;
s3.2: and increasing the magnification of the microscope to a third preset magnification, and moving along the preset direction under the field of view of the third preset magnification until the standard line to be searched is observed.
Further preferably, the first preset magnification is 20 times; the second preset magnification is 1000 times; the third preset magnification is 10 ten thousand times.
In general, the above technical solution conceived by the present invention has the following advantages compared to the prior art
Has the advantages that:
the invention provides a tracking method of a standard sample wafer with a line width and a standard line thereof, which comprises the steps of firstly searching a tracking arrow in the standard sample wafer with the line width; then, according to a preset direction indicated by the tracking arrow, searching a positioning mark, wherein the preset direction is the direction of an area where the standard line indicated by the tracking arrow is located; and finally, moving along a preset direction according to the positioning mark until the standard line to be searched is observed. According to the invention, the standard lines are positioned and indicated step by step through the tracking arrows and the positioning marks, so that the nanometer-level standard lines can be quickly found in the line width standard sample wafer, and the quick calibration of the scanning electron microscope is realized.
Drawings
Fig. 1 is a schematic structural diagram of a line width standard sample provided in an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a line width standard sample of a field of view at a second preset magnification according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of an indicating scale according to an embodiment of the present invention;
fig. 4 is a flowchart illustrating a method for tracking a standard line in a line width standard sample according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Examples
In one aspect, the present invention provides a line width standard sample, including: the device comprises a sample film, an indication mark and a plurality of groups of standard lines with different nominal values;
the indication mark and a plurality of groups of standard lines with different nominal values are drawn on the sample negative film;
the indicating mark is used for indicating the position of the standard line in the sample film negative.
In this embodiment, since the standard lines are typically lines with a width of nanometer, the field of view for observing the standard lines is typically one billion of the standard sample with a line width, and the standard lines directly searched on the sample substrate need to be enlarged and searched step by step, resulting in a slow tracking speed;
in the embodiment, the indication mark indicates the position of the standard line in the sample film, so that the indication of the area where the standard line is located can be obtained in a small-multiple view field, the tracking speed of the standard line is improved, and an electron microscope can be assisted to conveniently and quickly find the standard line in the line width standard sample;
in this embodiment, the indication mark includes: the device comprises a tracking arrow used for indicating the area where the standard lines are located, a positioning mark used for positioning the area where the standard lines are located under different magnification factors and an indicating scale used for accurately positioning the standard lines;
in this embodiment, the tracking arrow is used to mark the direction of the standard line under a first preset magnification; the positioning mark is drawn in the preset direction indicated by the tracking arrow and used for marking the position of the standard line under a second preset magnification; the second preset amplification factor is greater than the first preset amplification factor;
in this embodiment, the tracking arrows include a plurality of sets of arrows pointing from different directions to the area where the standard line is located;
in this embodiment, the magnification of the scanning electron microscope is continuously variable from several tens of times to several hundreds of thousands of times, and the lines having a line width of 25nm to 1000nm cannot be observed at the magnification of several tens of times to several tens of thousands of times; therefore, it is first necessary to design a set of tracking arrows that can be observed under several tens of times of magnification to indicate the area where the standard line width is located;
in this embodiment, fig. 1 is a view of a field of view observed through a microscope at a first predetermined magnification; the tracking arrows are shown in fig. 1, wherein the tracking arrows 1 are a plurality of sets of tracking arrows 1 composed of a series of arrows, each set of tracking arrows 1 points to the area where the standard line is located, and the indicated rectangular area 2 is the area where the standard line is located;
in the present embodiment, the first preset magnification may be several tens of times, for example, at a magnification of 20 times, the field of view as shown in fig. 2 is observed through a microscope;
in the present embodiment, fig. 2 shows the field of view when the positioning mark is observed; the positioning mark 3 is positioned at the side of the direction indicated by the tracking arrow 1, the positioning mark 3 can be a mark formed by two groups of lines, and when the positioning mark 3 can be observed under the field of view of a microscope and the size of the observed positioning mark 3 is proper, an indicating scale can be searched according to the positioning mark 3;
in this embodiment, fig. 3 shows an indication scale, the indication scale is located in a preset direction of the positioning mark 3, the preset direction is a direction indicated by a tracking arrow 1, if the tracking arrow 1 points to the right side in fig. 3, the indication scale is located on the right side of the positioning mark 3, and the size of the indication scale is different from that of the positioning mark 3, after the positioning mark 3 is found, the magnification of the microscope can be magnified, and then the indication scale is found along the preset direction;
in the embodiment, the indication scale is drawn in the preset direction of the positioning mark 3, and different coordinates of the indication scale correspondingly point to standard lines with different nominal values;
in this embodiment, the indicator scale is composed of a series of lines with a line width of 1 μm, and a number is marked every 10 μm to determine the coordinates of the position where the indicator scale is located;
in this embodiment, the standard line is designed at a position corresponding to a specific coordinate of the indication scale, and the standard line of a corresponding nominal value can be found by searching for a coordinate value on the indication scale; for example, the 25nm and 50nm standard lines correspond to coordinates of 1000; the coordinates corresponding to the standard lines of 100nm and 200nm are 0; the coordinates corresponding to the standard lines of 500nm and 1000nm are-1000; after the scale line corresponding to the standard line is found, the corresponding standard line can be found by translating towards the preset direction;
it can be known from the above embodiments that the nanoscale standard lines can be quickly found under a microscope by making the line width standard sample wafer with the indication mark, thereby improving the standard efficiency of the microscope.
On the other hand, as shown in fig. 4, the present invention provides a tracking method of the corresponding standard line, comprising the following steps:
s1: searching a tracking arrow in the online wide standard sample; more specifically, under the visual field of a microscope with a first preset magnification, a tracking arrow in the line width standard sample is searched;
s2: searching a positioning mark according to a preset direction indicated by a tracking arrow, wherein the preset direction is the direction of an area where a standard line indicated by the tracking arrow is located; more specifically, the method comprises the following steps:
s2.1: moving the center of the field of view of the microscope to the area of the standard line along the preset direction according to the preset direction of the area of the standard line indicated by the tracking arrow, and increasing the magnification of the microscope to a second preset magnification;
s2.2: searching a positioning mark according to the preset direction of the tracking arrow under the field of view with the second preset magnification, and moving the searched positioning mark to the center of the field of view of the microscope;
s3: moving along a preset direction according to the positioning mark until a standard line to be searched is observed; more specifically, the method comprises the following steps:
s3.1: searching the position of a first coordinate in the line width standard sample according to the corresponding relation between the positioning mark and the standard line to be searched, wherein the first coordinate is the corresponding coordinate of the standard line to be searched in the indicating scale;
s3.2: and increasing the magnification of the microscope to a third preset magnification, and moving the microscope along the preset direction under the field of view of the third preset magnification until the standard line to be searched is observed.
In summary, compared with the prior art, the invention has the following advantages:
the invention provides a tracking method of a standard sample wafer with a line width and a standard line thereof, which comprises the steps of firstly searching a tracking arrow in the standard sample wafer with the line width; then, according to a preset direction indicated by the tracking arrow, searching a positioning mark, wherein the preset direction is the direction of an area where the standard line indicated by the tracking arrow is located; and finally, moving along a preset direction according to the positioning mark until the standard line to be searched is observed. According to the invention, the standard lines are positioned and indicated step by step through the tracking arrows and the positioning marks, so that the nanometer-level standard lines can be quickly found in the line width standard sample wafer, and the quick calibration of the scanning electron microscope is realized.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (8)

1. A line width master, comprising: the device comprises a sample film, an indication mark and a plurality of groups of standard lines with different nominal values;
the indicating mark and the plurality of groups of standard lines with different nominal values are drawn on the sample film;
the indicating mark is used for indicating the position of the standard line in the sample film;
the indication marks comprise a tracking arrow, a positioning mark and an indication scale;
the tracking arrow is used for marking the direction of the standard line under a first preset magnification; the positioning mark is drawn in a preset direction indicated by a tracking arrow and used for marking the position of the standard line under a second preset magnification; wherein the second preset magnification is greater than the first preset magnification; the indicating scale is drawn in the preset direction of the positioning mark, and different vertical coordinates of the indicating scale correspondingly point to standard lines with different nominal values.
2. The line-width reticle of claim 1, wherein the tracking arrows comprise sets of arrows pointing from different directions to areas where the reticle lies.
3. The linewidth master of claim 1 or 2, wherein the positioning marks comprise a plurality of sets of marks with different line numbers, and the different line marks correspond to standard lines with different nominal values.
4. The line-width reticle of claim 1, wherein the first predetermined magnification factor is 20; the second predetermined magnification is 1000 times.
5. A method for tracking a standard line of a standard line width sample according to claim 1, comprising the steps of:
s1: searching a tracking arrow in the online wide standard sample under the visual field of a microscope at a first preset magnification;
s2: searching a positioning mark according to a preset direction indicated by a tracking arrow; the preset direction is the direction of the area where the standard line indicated by the tracking arrow is located;
s3: and moving along the preset direction according to the positioning mark until the standard line to be searched is observed.
6. The tracking method according to claim 5, wherein S2 comprises the steps of:
s2.1: moving the center of a view field of the microscope to the area of the standard line to be searched along the preset direction according to the preset direction of the area of the standard line to be searched indicated by the tracking arrow, and increasing the magnification of the microscope to a second preset magnification; wherein the second preset magnification is greater than the first preset magnification;
s2.2: and under the visual field of a second preset magnification, searching the positioning mark according to the preset direction of the tracking arrow, and moving the searched positioning mark to the center of the visual field of the microscope.
7. The method of claim 6, wherein S3 comprises the steps of:
s3.1: searching the position of the first coordinate in the line width standard sample according to the corresponding relation between the positioning mark and the standard line to be searched; the first coordinate is a corresponding coordinate of the standard line to be searched in the indicating scale;
s3.2: and increasing the magnification of the microscope to a third preset magnification, and moving along the preset direction under the field of view of the third preset magnification until the standard line to be searched is observed.
8. The tracking method according to claim 7, wherein the first preset magnification is 20 times; the second preset magnification is 1000 times; the third preset magnification is 10 ten thousand times.
CN202211557069.5A 2022-12-06 2022-12-06 Line width standard sample wafer and tracking method of standard lines thereof Pending CN115877036A (en)

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Application Number Priority Date Filing Date Title
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117452778A (en) * 2023-11-08 2024-01-26 深圳清溢微电子有限公司 Automatic alignment method and device for mask plate secondary exposure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117452778A (en) * 2023-11-08 2024-01-26 深圳清溢微电子有限公司 Automatic alignment method and device for mask plate secondary exposure

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