CN102193307A - Method for enhancing identifiability of pattern requiring measurement - Google Patents
Method for enhancing identifiability of pattern requiring measurement Download PDFInfo
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- CN102193307A CN102193307A CN 201010131817 CN201010131817A CN102193307A CN 102193307 A CN102193307 A CN 102193307A CN 201010131817 CN201010131817 CN 201010131817 CN 201010131817 A CN201010131817 A CN 201010131817A CN 102193307 A CN102193307 A CN 102193307A
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Abstract
The invention provides a method for enhancing identifiability of a pattern requiring measurement for a critical dimension scanning electronic microscope (CDSEM). The method comprises the following steps: selecting a shape of an assistant pattern and determining a dimension of the assistant pattern; determining a block on a photomask, wherein the pattern requiring measurement is located in the block; positioning the assistant pattern near the block; making the assistant pattern on the photomask; carry out exposing for the photomask. According to the method provided by the present invention, undistinguishable patterns on wafer can be automatically measured, and identifiability of the pattern is improved, such that measuring accuracy is raised, downtime is decreased and waste of human resources is reduced.
Description
Technical field
The present invention relates to semiconductor fabrication process, be particularly related to that a kind of (Critical Dimension Scanning Electronic Microscope, CDSEM) be used to strengthen waits to measure the method for the degree of recognized of pattern at the critical size sweep electron microscope.
Background technology
In the manufacture process of integrated circuit, generally speaking earlier photoresist is coated wafer surface.Seeing through light shield then exposes to photoresist.Then carry out postexposure bake to change the physical property of photoresist.Detect after developing afterwards (After Development Inspection, ADI).The key step that the back detects of developing is that (whether Critical Dimension CD) measures, up to specification to judge it for critical size to the photoresist pattern.If up to specification, then carry out etch process with the photoresist design transfer to wafer.
But along with the development of semiconductor fabrication, the demand of miniature sizes increases day by day, and critical size is more and more littler.Because the variation of critical size has significant impact to the characteristic of electronic component, therefore photoetching process must accurately be controlled the critical size of photoresist pattern, in order to avoid critical voltage and the line resistance change relevant with pattern dimension variation cause the reduction of element quality and circuit performance.
Generally speaking, utilize critical size sweep electron microscope (CDSEM) that critical size is measured.At first, with a branch of superfine electron beam scanning wafer, on wafer surface, inspire electronic secondary.Wherein, what of electronic secondary are relevant with electron beam incident angle, that is to say relevant with the surface structure of wafer.Then, electronic secondary is collected by surveying body, and the scintillater that is detected in the body is converted to light signal.Once more, this light signal is converted to the intensity that electric signal is controlled electron beam on the video screen through photomultiplier and amplifier, thereby demonstrates the scan image synchronous with electron beam.The scan image that is obtained by CDSEM is a 3 D stereo, has reflected the surface structure of wafer.In addition, launch electronic secondary in order to make wafer surface, wafer needs spraying last layer heavy metal particle after fixing, dewatering, and this heavy metal particle can send secondary electron signal under the bombardment of electron beam.
Though, CDSEM can carry out precision and measurement accurately to the photoetching of CD and the precision of etching as a rule, but on same wafer, the pattern that may exist CDSEM to be difficult to recognize, the very contiguous repeat patterns in the identical and position of a plurality of patterns in for example intensive pattern area.At this moment, be difficult to set up one and can accurately measure the wherein scheme of some gauge points.In addition, when will measure above-mentioned these gauge points one by one, also be difficult to set up automatically again scheme accurately.Therefore, usually need to expend great amount of manpower and assist measurement.
As shown in Figure 1.Figure 1 shows that the synoptic diagram of the local wafer that has pattern.101 for having the part of the wafer of waiting to measure pattern.104 and 105 is to treat respectively to measure pattern 102 and 103 and the synoptic diagram after adjacent pattern amplifies in proportion on every side.As can be seen from Figure 1, it is identical with its peripheral pattern form to wait to measure pattern 102, because it is small-sized and very contiguous with peripheral pattern, therefore, can compare difficulty when measuring 102 with CDSEM again, is easy to the situation of generating capacity sniffing mistake.Similarly, 103 size is littler than 102, can be bigger to its difficulty that accurately measures.
Therefore; need a kind of method that is used to strengthen the degree of recognized of waiting to measure pattern at CDSEM equipment; make and automatically to measure the pattern that those are difficult to recognize on the wafer; strengthen the degree of recognized of pattern, thereby improve accuracy, the reduction stop time that measures and reduce waste of manpower resource.
Summary of the invention
Introduced the notion of a series of reduced forms in the summary of the invention part, this will further describe in the embodiment part.Summary of the invention part of the present invention does not also mean that key feature and the essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection domain of attempting to determine technical scheme required for protection.
For when pattern being measured with CDSEM, strengthen the degree of recognized wait to measure pattern, the invention provides a kind of method that is used to strengthen the degree of recognized of waiting to measure pattern at the critical size sweep electron microscope, this method comprises the following steps:
A) select the shape of auxiliary pattern and the size of definite described auxiliary pattern;
B) on light shield, determine the described block of waiting to measure the pattern place;
C) at the described auxiliary pattern in location, described block next door;
D) on described light shield, make described auxiliary pattern;
E) described light shield is exposed.
Further, pattern described to be measured is a repeat patterns.
Further, it is wherein a kind of that the shape of described auxiliary pattern is selected from square box, crux and rice font.
Further, described auxiliary pattern range of size in the horizontal direction is 300～500nm.
Further, described auxiliary pattern size in the horizontal direction is preferably 300nm.
Further, described auxiliary pattern range of size in vertical direction is 300～500nm.
Further, described auxiliary pattern size in vertical direction is preferably 300nm.
Further, described auxiliary pattern is positioned at the next door, the lower left corner of described block.
Further, described auxiliary pattern and the described distance of waiting to measure between the block of pattern place are 1 dust.
According to the method that is used to strengthen the degree of recognized of waiting to measure pattern at the critical size sweep electron microscope of the present invention; by waiting that measuring the pattern next door adds two kinds of auxiliary patterns that constantly repeat; can strengthen the CDSEM board and treat the measurement pattern; the unusual degree of recognized of contiguous repeat patterns in the identical and position of a plurality of patterns in the particularly intensive pattern area; thereby improve accuracy, the reduction stop time that measures and reduce waste of manpower resource, and then enhance productivity.In addition, auxiliary pattern can also conduct focus on the reference point of process, thereby has protected pattern to be measured effectively.
Description of drawings
Following accompanying drawing of the present invention is used to understand the present invention at this as a part of the present invention.Embodiments of the invention and description thereof have been shown in the accompanying drawing, have been used for explaining principle of the present invention.In the accompanying drawings,
Figure 1 shows that the partial schematic diagram of the wafer that has pattern;
Fig. 2 A is depicted as the synoptic diagram of auxiliary pattern according to an embodiment of the invention;
Fig. 2 B is depicted as the synoptic diagram of auxiliary pattern in accordance with another embodiment of the present invention;
Fig. 2 C is depicted as the synoptic diagram of the auxiliary pattern of another embodiment according to the present invention;
Figure 3 shows that the local enlarged diagram of wafer after the method according to this invention has been made auxiliary pattern;
Figure 4 shows that the method flow diagram of the method according to this invention making auxiliary pattern.
Embodiment
In the following description, a large amount of concrete details have been provided so that more thorough understanding of the invention is provided.Yet, it will be apparent to one skilled in the art that the present invention can need not one or more these details and implemented.In other example,, be not described for technical characterictics more well known in the art for fear of obscuring with the present invention.
In order thoroughly to understand the present invention, will in following description, detailed steps be proposed, be how to strengthen the degree of recognized of waiting to measure pattern so that method of the present invention is described.Obviously, execution of the present invention is not limited to the specific details that the technician had the knack of of semiconductor applications.Preferred embodiment of the present invention is described in detail as follows, yet except these were described in detail, the present invention can also have other embodiments.
With reference to Fig. 2 A, Fig. 2 B, Fig. 2 C and Fig. 3 the method that is used to strengthen the degree of recognized of waiting to measure pattern of the present invention is described.Wherein, Fig. 2 A is depicted as the synoptic diagram of auxiliary pattern according to an embodiment of the invention; Fig. 2 B is depicted as the synoptic diagram of auxiliary pattern in accordance with another embodiment of the present invention;
Fig. 2 C is depicted as the synoptic diagram of the auxiliary pattern of another embodiment according to the present invention; Figure 3 shows that the local enlarged diagram of wafer after the method according to this invention has been made auxiliary pattern.
At first, select the shape of auxiliary pattern and the size of definite auxiliary pattern.Wherein, auxiliary pattern is to be used to strengthen the figure that pattern to be measured can degree of identification.And the shape of auxiliary pattern can be chosen wantonly, but with simple shape, be easy to be recognized as standard.For example, square box, crux can also be a M shape etc., shown in Fig. 2 A, Fig. 2 B and Fig. 2 C.
Auxiliary pattern is of a size of horizontal direction 300～500nm, and vertical direction is 300～500nm, is preferably horizontal direction 300nm, vertical direction 300nm.Those skilled in the art can select suitable numerical value according to actual conditions in above-mentioned scope.
Then, on light shield, determine to wait to measure the block at pattern place.The size of block and the quantity that measures pattern of waiting that comprises are determined according to actual conditions.It will be understood by those skilled in the art that pattern to be measured not adjacent to each other or that spacing is bigger should be put under different blocks.Each block is to comprise the square region with (n*n) individual pattern of waiting to measure pattern, preferably n=4.
Then, determine that above-mentioned good waiting measures location, the next door auxiliary pattern of pattern place block.Wherein, the cardinal rule of location auxiliary pattern is as follows: the position of auxiliary pattern can be in any position of waiting to measure pattern place block periphery, such as top, below etc.Preferably, in the lower left of described block.Distance between auxiliary pattern and the block can be determined according to actual conditions.If it is bigger to wait to measure the size of pattern, and the distance between other patterns of itself and periphery is bigger, and auxiliary pattern can be far away apart from block so.Otherwise auxiliary pattern will more close block.But auxiliary pattern can not with wait to measure pattern place overlapping block, simultaneously it can not be little of making formation interference between the pattern with the distance of waiting to measure between the block of pattern place.Preferably, the distance between auxiliary pattern and the block is 1 dust.Those skilled in the art can satisfy definite suitable distance under the situation of above-mentioned condition according to actual conditions.
Wherein, can have a plurality ofly at the quantity of the auxiliary pattern of each block, be at least 1.
In addition, can have multiplely at the shape of the auxiliary pattern of each light shield, be preferably 2 kinds, for example square box and crux.And the auxiliary pattern difference of adjacent block, promptly two kinds of auxiliary patterns constantly repeat cross arrangement.As shown in Figure 3, if the auxiliary pattern of block 303 is a crux, block 301,302,304 and 305 auxiliary pattern then are square box around it so.
Then, determining to make auxiliary pattern on the good position on the above-mentioned light shield with electron beam.
Then, after making auxiliary pattern, light shield is exposed.Like this, auxiliary pattern will expose to wafer with chip design.
Referring to Fig. 4, show the method flow diagram that the method according to this invention is made auxiliary pattern.
In step 401, select the shape of auxiliary pattern and the size of definite auxiliary pattern.Then, in step 402, on light shield, determine to wait to measure the block at pattern place.In step 403, location, the next door auxiliary pattern of in step 402, determining of waiting to measure pattern place block.Subsequently, in step 404, determining to make auxiliary pattern on the good position by step 403 on the above-mentioned light shield with electron beam.At last, in step 405, light shield is exposed.
Like this, owing to the simple shape of auxiliary pattern, be easy to identification, so measure pattern when measuring treating, not only can treat and measure pattern and position, but also can accurately measure the CD size by treating the relative distance between gauge point and the auxiliary pattern by waiting to measure relative distance between pattern and the auxiliary pattern.In addition, when treating gauge point with CDSEM and focus on, can also treat gauge point thereby protected with auxiliary patterns as focus point.
In sum, only be preferred embodiment of the present invention, be not the present invention is done any pro forma restriction.Though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention.Any those of ordinary skill in the art are not breaking away under the technical solution of the present invention scope situation, all can utilize the method for above-mentioned announcement and technology contents that technical solution of the present invention is made possible change and modification, or be revised as the embodiment that is equal to of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention, all still belongs in the scope of technical solution of the present invention protection any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (9)
1. method that is used to strengthen the degree of recognized of waiting to measure pattern, this method may further comprise the steps:
A) select the shape of auxiliary pattern and the size of definite described auxiliary pattern;
B) on light shield, determine the described block of waiting to measure the pattern place;
C) at the described auxiliary pattern in location, described block next door;
D) on described light shield, make described auxiliary pattern;
E) described light shield is exposed.
2. method according to claim 1 is characterized in that, pattern described to be measured is a repeat patterns.
3. method according to claim 1 is characterized in that, it is wherein a kind of that the shape of described auxiliary pattern is selected from square box, crux and rice font.
4. method according to claim 1 is characterized in that, described auxiliary pattern range of size in the horizontal direction is 300～500nm.
5. method according to claim 4 is characterized in that described auxiliary pattern is of a size of 300nm in the horizontal direction.
6. method according to claim 1 is characterized in that, described auxiliary pattern range of size in vertical direction is 300～500nm.
7. method according to claim 6 is characterized in that described auxiliary pattern is of a size of 300nm in vertical direction.
8. method according to claim 1 is characterized in that described auxiliary pattern is in the lower left corner of described block.
9. method according to claim 1 is characterized in that, the horizontal range between described auxiliary pattern and the described block is 1 dust.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN 201010131817 CN102193307B (en) | 2010-03-15 | 2010-03-15 | Method for enhancing identifiability of pattern requiring measurement |
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| CN 201010131817 CN102193307B (en) | 2010-03-15 | 2010-03-15 | Method for enhancing identifiability of pattern requiring measurement |
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| CN102193307A true CN102193307A (en) | 2011-09-21 |
| CN102193307B CN102193307B (en) | 2013-07-31 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569258A (en) * | 2010-12-09 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Sample structure and measuring method for CDSEM (critical dimension scanning electronic microscope) |
| CN104570587A (en) * | 2013-10-29 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | System and method for preparing OPC lithography mask |
| CN104752251A (en) * | 2013-12-30 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Method for testing graphics through CDSEM (Critical Dimension Scanning Electronic Microscope) |
| CN105628722A (en) * | 2014-10-29 | 2016-06-01 | 中芯国际集成电路制造(上海)有限公司 | Measurement structure and method for measuring measurement structure |
| CN107643651A (en) * | 2017-10-09 | 2018-01-30 | 上海华力微电子有限公司 | A kind of design method of photoetching secondary graphics |
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| CN1118457A (en) * | 1994-06-29 | 1996-03-13 | 株式会社日立制作所 | Photo mask, method for producing the same, pattern forming method, method of manufacturing semiconductor device and mask pattern design system |
| US20020182550A1 (en) * | 2001-05-30 | 2002-12-05 | Chang-Jyh Hsieh | Optical mask correction method |
| CN1400506A (en) * | 2001-06-27 | 2003-03-05 | 株式会社东芝 | Exposure process |
| KR20050009632A (en) * | 2003-07-18 | 2005-01-25 | 주식회사 하이닉스반도체 | Method for manufacturing phase shift mask by using quartz etching |
| US20060134530A1 (en) * | 2004-12-22 | 2006-06-22 | Hynix Semiconductor Inc. | Multi-transmission phase mask and exposure method using the same |
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| CN1118457A (en) * | 1994-06-29 | 1996-03-13 | 株式会社日立制作所 | Photo mask, method for producing the same, pattern forming method, method of manufacturing semiconductor device and mask pattern design system |
| CN1423168A (en) * | 1994-06-29 | 2003-06-11 | 株式会社日立制作所 | Light mask and making method thereof |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569258A (en) * | 2010-12-09 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Sample structure and measuring method for CDSEM (critical dimension scanning electronic microscope) |
| CN104570587A (en) * | 2013-10-29 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | System and method for preparing OPC lithography mask |
| CN104752251A (en) * | 2013-12-30 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Method for testing graphics through CDSEM (Critical Dimension Scanning Electronic Microscope) |
| CN104752251B (en) * | 2013-12-30 | 2018-02-16 | 中芯国际集成电路制造(上海)有限公司 | Using the method for CDSEM resolution charts |
| CN105628722A (en) * | 2014-10-29 | 2016-06-01 | 中芯国际集成电路制造(上海)有限公司 | Measurement structure and method for measuring measurement structure |
| CN105628722B (en) * | 2014-10-29 | 2019-01-08 | 中芯国际集成电路制造(上海)有限公司 | Measurement structure and the measurement method that measurement structure is measured |
| CN107643651A (en) * | 2017-10-09 | 2018-01-30 | 上海华力微电子有限公司 | A kind of design method of photoetching secondary graphics |
| CN107643651B (en) * | 2017-10-09 | 2021-04-16 | 上海华力微电子有限公司 | Design method of photoetching auxiliary pattern |
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| CN102193307B (en) | 2013-07-31 |
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