CN102560428A - Chemical vapor deposition machine station - Google Patents
Chemical vapor deposition machine station Download PDFInfo
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- CN102560428A CN102560428A CN2012100619421A CN201210061942A CN102560428A CN 102560428 A CN102560428 A CN 102560428A CN 2012100619421 A CN2012100619421 A CN 2012100619421A CN 201210061942 A CN201210061942 A CN 201210061942A CN 102560428 A CN102560428 A CN 102560428A
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Abstract
The invention relates to a chemical vapor deposition machine station, which comprises a standard mechanical interface, a front end, mechanical arms, a load lock, a buffer and a deposition cavity, wherein the standard mechanical interface is a starting position where a wafer enters the machine station; one end of the front end is connected with the standard mechanical interface, and the other end of the front end is connected with the load lock; the front end is provided with a fan filter unit, and the fan filter unit comprises a fan, wherein the fan is used for filtering air of the front end; the buffer is connected with the load lock; the deposition cavity is connected with the buffer; the mechanical arms are used for conveying wafers among the standard mechanical interface, the load lock and the deposition cavity; and the fan filter unit also comprises a detection device for detecting the working state of the fan. Because the detection device for detecting the working state of the fan is arranged in the fan filter unit in the front end of the chemical vapor deposition machine station, wafer pollution caused after the fan does not work is avoided, and inefficient products are reduced.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of chemical vapour deposition board.
Background technology
In semi-conductive technological process, often need be on wafer deposit film, and deposit film has a variety of modes, wherein comparatively common a kind of mode is chemical vapour deposition (CVD, chemical vapor deposition).Chemical vapour deposition is that reactant gases is transported to deposition chamber, and makes it and place the wafer of deposition chamber that chemical reaction takes place under certain condition, to deposit thin film in wafer surface.
As shown in Figure 1; The chemical vapour deposition board comprises standard mechanical interface 10 (SMIF, standard mechanical interface), fore-end 11 (Front End), mechanical arm 12, buffer memory place 13 (load lock), buffer zone 14 (Buffer) and deposition chamber 15, and wherein said standard mechanical interface 10 is starting positions that wafer gets into board; Said fore-end 11 1 ends connect standard mechanical interface 10; The other end connects buffer memory place 13, and the inside of fore-end 11 is micronic dust environment and external dust is many, and the quantity of both PM for particulate matters differs 100 times; And product can not directly contact with outside; Said fore-end 11 is provided with a blower fan filtering unit 16 (FFU, fan filter units), and said blower fan filtering unit 16 comprises fan 17; The fan 17 of blower fan filtering unit 16 is used for the internal medium of fore-end 11 and filters; Keeping internal medium is micronic dust environment (mini-environment), and said buffer memory place 13 is used to deposit the wafer of waiting for processing procedure and the processing procedure back wafer to be cooled that finishes, said buffer zone 14 connection buffer memory places 13; Said deposition chamber 15 is connected with buffer zone 13, and said mechanical arm 12 is used to transmit the wafer between standard mechanical interface 10, buffer memory place 13 and the deposition chamber 15.
Existing chemical vapour deposition board does not detect the whether device of works better of fan, and after fan 17 was not worked, fore-end 11 internal mediums were not in malleation; The dust of outside atmosphere will get into fore-end 11; Pollute wafer, influence product performance, produce the poor efficiency product; So whether the inspection fan running is normal in chemical vapor deposition processes, guarantee that the fore-end environment of chemical vapour deposition board is in very necessity of micronic dust environment.
Summary of the invention
The purpose of this invention is to provide a kind of chemical vapour deposition board,, reduce because of the fan poor efficiency product that the back wafer contamination produces of not working to detect the working order of fan.
Technical solution of the present invention is a kind of chemical vapour deposition board; Comprise standard mechanical interface, fore-end, mechanical arm, buffer memory place, buffer zone and deposition chamber; Wherein said standard mechanical interface is the starting position that wafer gets into board, and said fore-end one end connects the standard mechanical interface the other end and connects the buffer memory place, and said fore-end is provided with the blower fan filtering unit; Said blower fan filtering unit comprises fan; Said fan filters the air of fore-end, and said buffer zone connects said buffer memory place, and said deposition chamber is connected with buffer zone; Said mechanical arm is used for the wafer between transmission standard mechanical interface, buffer memory place and the deposition chamber, and said blower fan filtering unit comprises that also is used to detect a fan work status detection device.
As preferably: said proofing unit comprises pressure transmitter, and said pressure transmitter is used to detect the positive pressure in the fore-end.
As preferably: said pressure transmitter connects a hummer.
As preferably: said pressure transmitter is a pressure sensor.
Compared with prior art; Increase the pressure transmitter of the working order of a fan that is used to detect the blower fan filtering unit on the blower fan filtering unit of the present invention in the fore-end of chemical vapour deposition board; Avoid the wafer contamination that causes after not working because of fan; Thereby guarantee product performance, reduce the poor efficiency product.
Description of drawings
Fig. 1 is the structural representation of prior art chemical vapour deposition board.
Fig. 2 is the structural representation of chemical vapour deposition board of the present invention.
Embodiment
The present invention below will combine accompanying drawing to do further to detail:
A lot of details have been set forth in the following description so that make much of the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed practical implementation.
Secondly, the present invention utilizes synoptic diagram to be described in detail, when the embodiment of the invention is detailed; For ease of explanation; The sectional view of expression device architecture can be disobeyed general ratio and done local the amplification, and said synoptic diagram is instance, and it should not limit the scope of the present invention's protection at this.The three-dimensional space size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Fig. 2 shows the structural representation of chemical vapour deposition board of the present invention.
See also shown in Figure 2, in the present embodiment,
A kind of chemical vapour deposition board; Comprise standard mechanical interface 20, fore-end 21, mechanical arm 22, buffer memory place 23, buffer zone 24 and deposition chamber 25; Wherein said standard mechanical interface 20 is starting positions that wafer gets into board, and said fore-end 21 1 ends connect standard mechanical interface 20, and the other end connects buffer memory place 23; Said fore-end 21 is provided with a blower fan filtering unit 26; Said blower fan filtering unit 26 comprises fan 27, and said fan 27 filters the air of fore-ends 21, and buffer memory place 23 is used to deposit the wafer of waiting for processing procedure and the processing procedure wafer afterwards to be cooled that finishes; Said buffer zone 24 connects said buffer memory place 23; Said deposition chamber 25 is connected with buffer zone 24, and said mechanical arm 22 is used for the wafer between transmission standard mechanical interface 20, buffer memory place 23 and the deposition chamber 25, and said blower fan filtering unit 26 is set up a proofing unit 28 that is used to detect fan 27 working ordeies.
One preferred embodiment according to the present invention; Said proofing unit 28 comprises pressure transmitter; Said pressure transmitter is used to detect the positive pressure in the fore-end 21, and said pressure transmitter is a pressure sensor, and said pressure transmitter connects a hummer (not shown).When fan 27 irregular operatings, the positive pressures in the fore-end 21 reduce, when force value that said positive pressure sets less than pressure transmitter; The pressure transmitter transmission signal is given hummer; Produce and report to the police,, avoid dust to get into fore-end 21 with timely replacing fan; Pollute wafer, prevent the generation of poor efficiency product.
Increase a pressure transmitter that is used to detect the working order of fan on the blower fan filtering unit of the present invention in the fore-end of chemical vapour deposition board, avoid the fan back wafer of not working contaminated, thereby guarantee product performance, reduce the poor efficiency product.
The above is merely preferred embodiment of the present invention, and all equalizations of being done according to claim scope of the present invention change and modify, and all should belong to the covering scope of claim of the present invention.
Claims (4)
1. chemical vapour deposition board; Comprise standard mechanical interface, fore-end, mechanical arm, buffer memory place, buffer zone and deposition chamber; Wherein said standard mechanical interface is the starting position that wafer gets into board, and said fore-end one end connects the standard mechanical interface the other end and connects the buffer memory place, and said fore-end is provided with the blower fan filtering unit; Said blower fan filtering unit comprises fan; Said fan filters the air of fore-end, and said buffer zone connects said buffer memory place, and said deposition chamber is connected with buffer zone; Said mechanical arm is used for the wafer between transmission standard mechanical interface, buffer memory place and the deposition chamber, it is characterized in that: said blower fan filtering unit comprises that also is used to detect a fan work status detection device.
2. chemical vapour deposition board according to claim 1 is characterized in that: said proofing unit comprises pressure transmitter, and said pressure transmitter is used to detect the positive pressure in the fore-end.
3. chemical vapour deposition board according to claim 2 is characterized in that: said pressure transmitter connects a hummer.
4. chemical vapour deposition board according to claim 2 is characterized in that: said pressure transmitter is a pressure sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100619421A CN102560428A (en) | 2012-03-09 | 2012-03-09 | Chemical vapor deposition machine station |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100619421A CN102560428A (en) | 2012-03-09 | 2012-03-09 | Chemical vapor deposition machine station |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102560428A true CN102560428A (en) | 2012-07-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100619421A Pending CN102560428A (en) | 2012-03-09 | 2012-03-09 | Chemical vapor deposition machine station |
Country Status (1)
| Country | Link |
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| CN (1) | CN102560428A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109143786A (en) * | 2018-09-25 | 2019-01-04 | 西安微电子技术研究所 | A method of reducing deep-submicron photoetching process spherical defect |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040144316A1 (en) * | 2003-01-24 | 2004-07-29 | Soo-Woong Lee | Apparatus for processing a substrate |
| CN1632164A (en) * | 2003-12-24 | 2005-06-29 | 上海宏力半导体制造有限公司 | Process for reducing particles in low pressure chemical vapor deposition equipment |
| CN101061253A (en) * | 2004-11-22 | 2007-10-24 | 应用材料股份有限公司 | Substrate processing apparatus using a batch processing chamber |
-
2012
- 2012-03-09 CN CN2012100619421A patent/CN102560428A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040144316A1 (en) * | 2003-01-24 | 2004-07-29 | Soo-Woong Lee | Apparatus for processing a substrate |
| CN1632164A (en) * | 2003-12-24 | 2005-06-29 | 上海宏力半导体制造有限公司 | Process for reducing particles in low pressure chemical vapor deposition equipment |
| CN101061253A (en) * | 2004-11-22 | 2007-10-24 | 应用材料股份有限公司 | Substrate processing apparatus using a batch processing chamber |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109143786A (en) * | 2018-09-25 | 2019-01-04 | 西安微电子技术研究所 | A method of reducing deep-submicron photoetching process spherical defect |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140425 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20140425 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120711 |
|
| RJ01 | Rejection of invention patent application after publication |