CN210272276U

CN210272276U - Semiconductor etching equipment

Info

Publication number: CN210272276U
Application number: CN201921433632.1U
Authority: CN
Inventors: 不公告发明人
Original assignee: Changxin Memory Technologies Inc
Current assignee: Changxin Memory Technologies Inc
Priority date: 2019-08-30
Filing date: 2019-08-30
Publication date: 2020-04-07
Anticipated expiration: 2029-08-30

Abstract

The utility model provides a semiconductor etching equipment, it includes: the atmosphere transfer cavity is used for accommodating an etched object; the air filtering device is arranged at the air inlet of the atmosphere conveying cavity and comprises a primary filtering piece and a secondary filtering piece, the primary filtering piece and the secondary filtering piece are connected through a filtering channel, and outside air enters the filtering channel after passing through the primary filtering piece and enters the atmosphere conveying cavity through the secondary filtering piece. The utility model has the advantages of, will primary filter piece and secondary filter piece pass through filtering channel and connect, and external gas warp primary filter piece filters the back and directly gets into secondary filter piece by filtering channel and filters, has avoided the gas through primary filter piece filtration to be contaminated before getting into secondary filter piece, has reduced the entering greatly the pollution source in atmosphere conveying chamber to avoid forming the condensation pollutant by sculpture thing surface shape, improve the yield by the sculpture thing.

Description

Semiconductor etching equipment

Technical Field

The utility model relates to an apparatus field for semiconductor manufacturing especially relates to a semiconductor etching equipment.

Background

At present, the microelectronic manufacturing technology is rapidly developed, the production line of the silicon chip enters the technical maturity stage, the line width of the chip reaches the nanometer level, and therefore, the requirements of corresponding products on the production environment are higher and higher. For the microelectronic manufacturing industry, molecular air pollutants (or airborne molecular pollutants, abbreviated as AMC) in the air, like particles, can harm products and directly lead to yield reduction.

In the current semiconductor process, after the silicon wafer is etched in the etching cavity, residual gas is easily generated on the surface of the silicon wafer, and when the silicon wafer is conveyed to an atmosphere module of the semiconductor etching equipment from the etching cavity of the semiconductor etching equipment, the residual gas on the surface of the silicon wafer is easily combined with the gas containing molecular air pollutants in the atmosphere module to react, so that a condensation phenomenon can be generated in the reaction process, an adverse effect can be generated on the surface of the silicon wafer, and the phenomenon directly influences the yield of the silicon wafer.

The molecular air pollutants exist in a gaseous state, and can be generated by automobile exhaust, atmospheric ozone, factory emission and the like outside a dust-free room, or chemical solvent volatilization, etching acid gas, plastic product overflow and the like in a clean room. Therefore, how to effectively control the amount of molecular-level air pollutants entering the atmospheric module of the semiconductor etching equipment is becoming a great problem for related manufacturers.

SUMMERY OF THE UTILITY MODEL

The utility model aims to solve the technical problem that a semiconductor etching equipment is provided, its molecular level air contaminant that can filter the air avoids being damaged by the sculpture thing, improves the yield by the sculpture thing.

In order to solve the above problem, the utility model provides a semiconductor etching device, it includes: the atmosphere transfer cavity is used for accommodating an etched object; the air filtering device is arranged at the air inlet of the atmosphere conveying cavity and comprises a primary filtering piece and a secondary filtering piece, the primary filtering piece and the secondary filtering piece are connected through a filtering channel, and outside air enters the filtering channel after passing through the primary filtering piece and enters the atmosphere conveying cavity through the secondary filtering piece.

Further, the primary filter element is a chemical filter membrane.

Further, the secondary filter element is a high-efficiency air particle filter or an ultra-high-efficiency air particle filter.

Further, the filter passage extends toward the primary filter element such that the primary filter element is disposed in the filter passage.

Furthermore, at least one intermediate filter element is arranged in the filter channel, and outside air enters the filter channel after passing through the primary filter element and enters the atmosphere transfer cavity through the intermediate filter element and the secondary filter element.

Further, the intermediate filter element is arranged in the filter channel in a drawable manner.

Further, the gas filtering device further comprises an air extracting device, and the air extracting device is arranged between the filtering channel and the secondary filtering piece and used for extracting the outside gas into the atmosphere conveying cavity.

Furthermore, semiconductor etching equipment still includes dry compressed gas input device, dry compressed gas input device with the air inlet intercommunication in atmosphere conveying chamber for to dry compressed gas is carried to the atmosphere conveying intracavity, dry compressed gas can adsorb the steam in the atmosphere conveying chamber, in order to reduce the relative humidity in atmosphere conveying chamber.

Further, the air inlet of the dry compressed air input device is arranged on the filtering channel, and dry compressed air enters the atmosphere transfer cavity through the filtering channel.

Further, the dry compressed gas input device is communicated with the air inlet of the atmosphere conveying cavity through a conveying pipe, and the outer surface of the conveying pipe is coated with a heating belt to heat the dry compressed gas in the conveying pipe to form hot dry compressed gas.

Further, the dry compressed gas input device further comprises a pressure regulating device to regulate the pressure of the dry compressed gas input device.

Further, the semiconductor etching equipment further comprises a humidity measuring device, wherein the humidity measuring device is used for measuring the humidity in the atmosphere conveying cavity, the humidity measuring device is electrically connected with the dry compressed gas input device, and when the relative humidity in the atmosphere conveying cavity is higher than a preset value, the dry compressed gas input device starts or increases the flow of the dry compressed gas.

Further, the humidity measuring device is disposed below one-half of the atmosphere transfer chamber.

Furthermore, the semiconductor etching equipment also comprises at least one air pumping pipeline, and the air pumping pipeline is arranged at an air outlet of the atmosphere conveying cavity and used for pumping the gas in the atmosphere conveying cavity.

The utility model has the advantages of, will primary filter piece and secondary filter piece pass through filtering channel and connect, and external gas warp primary filter piece filters the back and directly gets into secondary filter piece by filtering channel and filters, has avoided the gas through primary filter piece filtration to be contaminated before getting into secondary filter piece, has reduced the entering greatly the pollution source in atmosphere conveying chamber to avoid forming the condensation pollutant by sculpture thing surface shape, improve the yield by the sculpture thing.

Drawings

FIG. 1 is a schematic structural diagram of a first embodiment of a semiconductor etching apparatus according to the present invention;

FIG. 2 is a schematic cross-sectional view of an atmospheric transfer chamber of a first embodiment of the semiconductor etching apparatus of the present invention;

FIG. 3 is a schematic cross-sectional view of an atmospheric transfer chamber of a second embodiment of a semiconductor etching apparatus of the present invention;

FIG. 4 is a schematic cross-sectional view of an atmospheric transfer chamber according to a third embodiment of the semiconductor etching apparatus of the present invention;

FIG. 5 is a schematic cross-sectional view of an atmospheric transfer chamber according to a fourth embodiment of the semiconductor etching apparatus of the present invention;

fig. 6 is a schematic cross-sectional view of an atmospheric transfer chamber according to a fifth embodiment of the semiconductor etching apparatus of the present invention.

Detailed Description

The following describes in detail a specific embodiment of a semiconductor etching apparatus according to the present invention with reference to the accompanying drawings.

Fig. 1 is a schematic structural diagram of a first embodiment of the semiconductor etching apparatus of the present invention. Referring to fig. 1, the etching apparatus includes an atmospheric transfer chamber 10 and an etching chamber 20. The atmospheric transfer cavity 10 is used for containing an etched object, and the etching cavity 20 is used for etching a sample to form the etched object. That is, the sample is transferred to the etching chamber, which performs an etching process on the sample to form the etching object, and the etching object is transferred to the atmospheric transfer chamber 10.

Fig. 2 is a schematic cross-sectional view of the atmospheric transfer chamber 10. Referring to fig. 1 and 2, the semiconductor etching apparatus further includes a gas filtering device 30. The gas filtering device 30 is arranged at the air inlet of the atmosphere transfer chamber 10. The outside air enters the atmosphere transfer cavity 10 after being filtered by the air filtering device.

The gas filtering device 30 can filter molecular air pollutants in the outside air, so that the air entering the atmosphere transfer chamber is clean air, and unclean air is prevented from entering the atmosphere transfer chamber 10. If unclean gas enters the atmospheric transfer chamber 10, the unclean gas reacts with the residual gas of the etched object to generate condensable pollutants, which can produce adverse effects on the surface of the etched object and reduce the yield of the etched object.

The gas filter device 30 includes a primary filter element 31 and a secondary filter element 32, the primary filter element 31 and the secondary filter element 32 being connected by a filter channel 33. The ambient gas enters the filter channel 33 after passing through the primary filter element 31 and enters the atmospheric transfer chamber 10 through the secondary filter element 32, the flow of which is schematically illustrated by the solid arrows in fig. 2. The primary filter element 32 may include, but is not limited to, a chemical filter membrane that filters acid gases, and the secondary filter element 32 may include, but is not limited to, a high efficiency air particle filter or an ultra high efficiency air particle filter that filters particulates from gases.

In this embodiment, the primary filter element 31, the filter passage 33 and the secondary filter element 32 are arranged in sequence, and the external air enters the atmospheric transfer chamber 10 after passing through the primary filter element 31, the filter passage 33 and the secondary filter element 32 in sequence. In other embodiments of the present invention, the primary filter element 31 and the secondary filter element 32 may be interchangeable.

The utility model discloses in the semiconductor etching equipment, primary filter piece 31 is direct to be connected with secondary filter piece 32 through filtering channel 33, and external gas warp primary filter piece 31 filters the back and directly enters secondary filter piece 32 by filtering channel 33 and filters, has avoided filtering gas through primary filter piece 31 contaminated before getting into secondary filter piece 33, has reduced the entering pollution sources in the atmosphere conveying chamber 10 gets into the gas in atmosphere conveying chamber 10 is more clean gas.

In this embodiment, the primary filter member 31 is disposed at the end of the filtering channel 33, in other embodiments of the present invention, as shown in fig. 3, which is a schematic cross-sectional view of the atmospheric transfer chamber of the second embodiment of the semiconductor etching apparatus of the present invention, the filtering channel 33 extends toward the primary filter member 31, so that the primary filter member 31 is disposed in the filtering channel 33. Preferably, the primary filter element 31 is arranged in the filter passage 33 in a drawable manner, for example, by arranging the primary filter element 31 in a drawer-like manner with respect to the filter passage 33, so as to facilitate replacement of the primary filter element 31.

Further, in the present embodiment, the gas filtering device 30 further includes a gas exhausting device 34. The suction device 34 is arranged between the filter channel 33 and the secondary filter element 32 for drawing ambient air into the atmospheric transfer chamber 10. The air extraction device 34 includes, but is not limited to, a fan.

Further, the semiconductor etching apparatus further comprises at least one gas pumping pipeline 40, and the gas pumping pipeline 40 is disposed at a gas outlet of the atmosphere transfer chamber 10, so as to pump gas in the atmosphere transfer chamber 10. The laminar flow effect generated by the pumping of the pumping line 40 and the gas delivery of the pumping device 34 can accelerate the flow rate of the gas in the atmospheric transfer chamber 10, thereby further preventing the residual gas of the etched object from reacting with the gas in the atmospheric transfer chamber 10 to generate the condensable pollutant.

In order to further improve the filtering performance of the filtering device, the utility model also provides a third embodiment of the semiconductor etching equipment. Fig. 4 is a schematic cross-sectional view of an atmospheric transfer chamber according to a third embodiment of the semiconductor etching apparatus of the present invention, referring to fig. 4, the third embodiment is different from the first embodiment in that at least one intermediate filter 35 is further disposed in the filter passage 33, and the external air enters the filter passage 33 after passing through the primary filter 31, and enters the atmospheric transfer chamber 10 through the intermediate filter 35 and the secondary filter 32. In the present embodiment, two intermediate filter elements 35 are arranged in the filter channel 33, the intermediate filter elements 35 being arranged in parallel in the filter channel 33. The intermediate filter element 35 may filter the same type of contaminants as the primary filter element 31, the secondary filter element 32, or both the primary filter element 31 and the secondary filter element 33.

In the third embodiment, an intermediate filter element 35 is added to the filtering passage 33 to further enhance the filtering of the outside air, so as to make the air entering the atmospheric transfer chamber 10 cleaner.

Further, the intermediate filter member 35 is provided in the filter passage 33 in a drawable manner, for example, by providing the intermediate filter member 35 in a drawer-like manner with respect to the filter passage 33, so as to facilitate replacement of the intermediate filter member 35.

In the semiconductor etching equipment, residual gas generated after etching of an etched object in the atmosphere transfer cavity 10 has the opportunity to react with water vapor in the atmosphere transfer cavity 10 to generate condensable pollutants. In order to further avoid the generation of the condensable pollutants, the utility model also provides a fourth specific implementation mode of the semiconductor etching equipment.

Fig. 5 is a schematic cross-sectional view of an atmospheric transfer chamber according to a fourth embodiment of the semiconductor etching apparatus of the present invention. Referring to fig. 5, the fourth embodiment is different from the first embodiment in that the semiconductor etching apparatus further includes a dry compressed gas input device 50. The dry compressed gas input device 50 is communicated with the air inlet of the atmosphere transfer cavity 10 and is used for conveying dry compressed gas into the atmosphere transfer cavity 10, and the dry compressed gas can adsorb water vapor in the atmosphere transfer cavity 10 so as to reduce the relative humidity of the atmosphere transfer cavity. The water vapor in the atmospheric transfer cavity 10 is adsorbed by the dry compressed gas and then does not react with the residual gas of the etched object, so that the water vapor in the atmospheric transfer cavity 10 is prevented from reacting with the residual gas of the etched object to form condensation pollutants.

In the fourth embodiment, the inlet of the dry compressed gas input device 50 is disposed on the filtering channel 33, for example, the inlet of the dry compressed gas input device 50 is disposed on the side of the filtering channel 33. The dry compressed gas enters the atmospheric transfer chamber 10 through the filter passage 33. The flow direction of the dry compressed gas is schematically depicted in fig. 5 with dashed arrows. The dry compressed gas is filtered by the filtering channel 33 and the secondary filter element 32, and is pumped by the air pumping device 34 to enter the atmosphere transfer cavity 10, so that the water vapor can be adsorbed more quickly, the relative humidity in the atmosphere transfer cavity 10 is reduced, and the water vapor is prevented from forming condensation pollutants on the surface of the etched object.

Further, the dry compressed gas input device 50 includes a gas supply device 51 and a transmission pipe 52, the gas supply device 51 is used for supplying gas, and the transmission pipe 52 connects the gas supply device 51 with the filtering channel 33 and is used for transmitting the gas supplied by the gas supply device 51 to the atmosphere transmission chamber 10.

Preferably, the moisture content of the dry compressed gas is less than 0.1ppm in order to avoid the dry compressed gas from carrying moisture into the atmospheric transfer chamber 10. Wherein ppm is weight percentage, 1ppm is 1 ug/mL.

Preferably, to avoid the relative humidity of the dry compressed gas from affecting the relative humidity within the atmospheric transfer chamber 10, the relative humidity of the dry compressed gas is less than 5% RH. Wherein RH represents relative humidity.

Preferably, in order to enhance the action effect of the dry compressed gas, the flow rate of the dry compressed gas is 60slm to 120 slm. Where slm (Standard Litter per minute) represents standard liters per minute.

Preferably, in order to enable the dry compressed gas to be input to the atmospheric transfer chamber 10, the dry compressed gas needs to have a pressure, for example, a pressure of 75psig to 90 psig. psig (pound per square inch gauge).

Further, the dry compressed gas may be a hot dry compressed gas, which can accelerate evaporation of water vapor in the atmosphere transfer cavity 10, so that the water vapor can be rapidly discharged out of the atmosphere transfer cavity 10 along with the external air, thereby reducing the relative humidity of the atmosphere transfer cavity 10. Preferably, the temperature of the hot dry compressed gas is between 80 ℃ and 100 ℃, preferably 100 ℃. In this embodiment, the outer surface of the conveying pipe 52 is covered with a heating band to heat the dry compressed gas in the conveying pipe 52 to a preset temperature. In other embodiments of the present invention, the dry compressed gas can be heated by other heating methods to form the dry compressed gas.

Further, the dry compressed gas input device 50 further includes a pressure adjusting device 53 to adjust the pressure of the dry compressed gas input device 50, so as to maintain the gas flow rate in the dry compressed gas input device 50 stable. . Further, the dry compressed gas input device 50 may further include a flow rate adjustment valve to adjust a flow rate of the dry compressed gas input device 50.

In the second embodiment, the filtering device 30 of the semiconductor etching apparatus and the dry compressed gas input device 50 cooperate to greatly reduce the formation of the condensable contaminants on the surface of the etched object, thereby improving the yield of the etched object.

The utility model also provides a fifth embodiment of semiconductor etching equipment. Fig. 6 is a schematic cross-sectional view of an atmospheric transfer chamber according to a fifth embodiment of the semiconductor etching apparatus of the present invention, referring to fig. 6, the fifth embodiment is different from the fourth embodiment in that the semiconductor etching apparatus further includes a humidity measuring device 60. The moisture measuring device 60 includes, but is not limited to, a digital hygrometer. The humidity measuring device 60 is used to measure the humidity within the atmospheric transfer chamber 10.

The humidity measuring device 60 can be communicated with the atmosphere conveying cavity 10 through a hose 61, and the gas in the atmosphere conveying cavity 10 can enter the humidity measuring device 60, so that the humidity measuring device 60 can measure the humidity in the atmosphere conveying cavity 10. The humidity measuring device 60 is also electrically connected to the dry compressed gas input device 50, and when the relative humidity in the atmosphere transferring chamber 10 is higher than a preset value, the humidity measuring device 60 transmits a signal to the controller of the dry compressed gas input device 50, and the controller controls the dry compressed gas input device 50 to start or increase the flow of the dry compressed gas. For example, when the humidity measuring device 60 measures a humidity in the atmosphere transfer chamber 10 greater than 30% RH, the humidity measuring device 60 transmits a signal to the dry compressed gas input device 50 through a signal control line, and the dry compressed gas input device 50 is turned on and inputs dry compressed gas into the atmosphere transfer chamber 10.

Further, the humidity measuring device 60 is disposed below a half position of the atmosphere transfer chamber 10. Specifically, in the present embodiment, the position of the hose 61 is below one-half of the position of the atmosphere transfer chamber 10. The humidity of the upper gas in the atmosphere transfer chamber 10 will be less than that of the lower gas, and the humidity measuring device 60 is installed at a lower position to better detect the relative humidity of the atmosphere transfer chamber 10, so as to increase the measurement accuracy of the humidity measuring device 60.

The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of improvements and decorations can be made without departing from the principle of the present invention, and these improvements and decorations should also be regarded as the protection scope of the present invention.

Claims

1. A semiconductor etching apparatus, comprising:

the atmosphere transfer cavity is used for accommodating an etched object;

the air filtering device is arranged at the air inlet of the atmosphere conveying cavity and comprises a primary filtering piece and a secondary filtering piece, the primary filtering piece and the secondary filtering piece are connected through a filtering channel, and outside air enters the filtering channel after passing through the primary filtering piece and enters the atmosphere conveying cavity through the secondary filtering piece.

2. The semiconductor etching apparatus according to claim 1, wherein the primary filter is a chemical filter membrane.

3. The semiconductor etching apparatus of claim 1, wherein the secondary filter is a high efficiency air particle filter or an ultra high efficiency air particle filter.

4. The semiconductor etching apparatus according to claim 1, wherein the filter passage extends toward the primary filter member such that the primary filter member is disposed in the filter passage.

5. A semiconductor etching apparatus according to claim 1, wherein at least one intermediate filter member is further disposed in the filter passage, and wherein ambient gas passes through the primary filter member, enters the filter passage, passes through the intermediate filter member and the secondary filter member, and enters the atmospheric transfer chamber.

6. The semiconductor etching apparatus according to claim 5, wherein the intermediate filter is drawably disposed in the filter passage.

7. The semiconductor etching apparatus according to claim 1, wherein the gas filtering device further comprises a gas extraction device disposed between the filter tunnel and the secondary filter member for extracting ambient gas into the atmospheric transport chamber.

8. The semiconductor etching equipment according to any one of claims 1 to 7, further comprising a dry compressed gas input device, wherein the dry compressed gas input device is communicated with a gas inlet of the atmosphere transfer cavity and is used for conveying dry compressed gas into the atmosphere transfer cavity, and the dry compressed gas can adsorb water vapor in the atmosphere transfer cavity to reduce the relative humidity of the atmosphere transfer cavity.

9. The semiconductor etching apparatus according to claim 8, wherein the inlet of the dry compressed gas input device is disposed on the filter passage, and dry compressed gas enters the atmospheric transfer chamber through the filter passage.

10. The semiconductor etching equipment according to claim 8, wherein the dry compressed gas input device is communicated with the gas inlet of the atmosphere transfer chamber through a transfer pipe, and a heating belt is wrapped on the outer surface of the transfer pipe to heat the dry compressed gas in the transfer pipe to form hot dry compressed gas.

11. The semiconductor etching apparatus according to claim 8, wherein the dry compressed gas input means further comprises a pressure adjusting means to adjust a pressure of the dry compressed gas input means.

12. The semiconductor etching apparatus according to claim 8, further comprising a humidity measuring device for measuring a humidity in the atmospheric delivery chamber, the humidity measuring device being electrically connected to the dry compressed gas input device, wherein the dry compressed gas input device turns on or increases a flow rate of the dry compressed gas when a relative humidity in the atmospheric delivery chamber is higher than a preset value.

13. The semiconductor etching apparatus according to claim 12, wherein the humidity measuring device is disposed below a half position of the atmosphere transfer chamber.

14. The semiconductor etching equipment according to claim 1, further comprising at least one gas pumping pipeline, wherein the gas pumping pipeline is arranged at a gas outlet of the atmosphere transfer cavity and is used for pumping gas in the atmosphere transfer cavity.