CN102545034A - Lateral pump module of semiconductor module - Google Patents
Lateral pump module of semiconductor module Download PDFInfo
- Publication number
- CN102545034A CN102545034A CN2011101008276A CN201110100827A CN102545034A CN 102545034 A CN102545034 A CN 102545034A CN 2011101008276 A CN2011101008276 A CN 2011101008276A CN 201110100827 A CN201110100827 A CN 201110100827A CN 102545034 A CN102545034 A CN 102545034A
- Authority
- CN
- China
- Prior art keywords
- cavity
- pump module
- crystal bar
- pumping
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Lasers (AREA)
Abstract
The invention discloses a lateral pump module of a semiconductor module, which is used for improving evenness of a pump and is fixed on a base plate of the laser through a mechanical fixing piece. The lateral pump module comprises a diffuse reflection cavity and a pump source, wherein the diffuse reflection cavity comprises a cavity body, a quartz glass tube arranged in the cavity body and a crystal rod arranged in the quartz glass tube in the cavity body, and a plurality of light-through slits are arranged on the cavity body at intervals. The pump source comprises a plurality of lighting units arranged in the light-through slits. In addition, a water flow channel is arranged between the quartz glass tube and the crystal rod. The lateral pump module has the advantages obtaining a multi-direction pump by adjusting the axial intersection angle of the pump source and the crystal rod, further adopting an off-axis pump and resolving the problem of pump evenness.
Description
Technical field
The present invention relates to laser technology field, especially relate to the side pump module of the semiconductor laser that can improve pumping homogeneity.
Background technology
In recent years, all solid state laser is so that its volume is little, in light weight, efficient is high, stable performance, good reliability, beam quality advantages of higher, and formerly system is made, field such as medical treatment, communication obtained extensive use.According to the pump mode classification, all solid state laser can be divided into types such as end pumping and profile pump; Wherein, End pumping has that pattern matching is good, the light conversion efficiency advantages of higher, but owing to receive the restriction of fracture strength, it can't obtain laser output of high power and high light beam quality; Though in the end pumping type; Slab laser still because the hot spot of output becomes astigmatism, also is inappropriate for commercial Application owing to big area of dissipation has reduced fracture strength; Profile pump is because semiconductor laser array and excellent length direction matched well are easy to high power pump, so the profile pump mode becomes optimal selection.
But; Under high power pump, on the one hand, because the heat distribution that laser crystal absorbs is radial distribution with the pumping light intensity; Laser medium space refractive index also can be radial distribution with gain; Therefore the class lens effect of its generation can form basic mode dynamic stability chamber, and its steady district scope will certainly limit peak power output along with the pump light linear transformation.On the other hand, because the laser medium elasto-optical effect, thermic stress birfringence makes radially leaves with steady differentiation of tangential polarization light, thereby has limited steady district overlapping scope, has further limited power output.
In addition; Because can making, the inhomogeneous thermal lens distortion that causes of pumping produces thermic diffraction loss in the laser generation process; And light conversion efficiency depends on the ratio of resonant cavity gain and loss, and therefore along with pump power is strengthened, power output increases; The caused beam quality of heat distortion is variation thereupon also, and thermic diffraction loss has finally limited extraction efficiency.
This shows, seek out the laser output of high power and high light beam quality, improve pumping homogeneity and become the technical problem that the laser technology research staff needs to be resolved hurrily.
At present, in order to improve pumping homogeneity, taked different side pump modes both at home and abroad one after another; For example, people's such as nineteen ninety-five Germany D.Golla the method for passing through optical fiber coupling pumping solution pumping homogeneity, in the method; It is with the semiconductor laser coupled into optical fibres, further optical fiber is arranged in around the crystal bar side by side again, distributes thereby obtain uniform pumping light; But because pump light is through the optical fiber conversion to laser output, thus greatly reduce light conversion efficiency, and complex structure.Another kind method; Exactly dielectric waveguide is advanced in semiconductor pumped optical coupling; With arriving laser medium through quartzy wave duct again after the pump light homogenize, pump light distributes thereby obtain uniformly, but the dielectric waveguide optical coupling system greatly reduces the pump light efficiency of transmission.
To above-mentioned; In order to obtain pump module simple in structure; Also proposed at present a kind of method that adopts the pump-coupling coupling, this method is with the adjacent quartzy wave duct of semiconductor laser array, and through plating highly reflecting films at glass-tube; The pump light that passes laser medium is reflected formation once more repeatedly absorb, to improve pumping efficiency.But because this method need reflect formation once more and repeatedly absorb, though pumping efficiency has improved, pumping homogeneity is but than aforementioned two kinds of methods whether go up.
Summary of the invention
Based on the existing existing problem of side pump mode of improving pumping homogeneity; Main purpose of the present invention is to provide a kind of pumping homogeneity that improves, and further improves the side pump module of semiconductor laser of efficiency of transmission and the output beam quality of semiconductor side pump module.
To achieve these goals, the present invention has adopted following technical scheme:
The side pump module of said semiconductor laser is used to improve pumping homogeneity, and is fixed on the base plate of laser through mechanical fixed part, comprising:
Diffuse-reflective cavity comprises cavity, is arranged in the quartz glass tube in the cavity and is arranged in the cavity and is arranged in the crystal bar of quartz glass tube, wherein, is provided with a plurality of logical optical slits in the cavity equal intervals; And
Pumping source comprises a plurality of luminescence units, and luminescence unit is for being arranged in the said logical optical slits.
Further, between said quartz glass tube and the crystal bar be water stream channel.
Further, a plurality of luminescence units of said pumping source equidistantly are symmetrically distributed in around the crystal bar in the said diffuse-reflective cavity, and around the equidistant anglec of rotation of the optical axis of said crystal bar.
Further, the cavity geometry of said diffuse-reflective cavity is a kind of in triangle, pentagon, rectangle and the circle.
Further, said irreflexive cavity and said quartz glass tube fit tightly.
Further, the two ends of said crystal bar are through gland compression seal water stream channel.
Further, the angle of the optical axis of said luminescence unit and crystal bar forms from the axle pumping greater than 0 °.
Further, said quartz glass tube two ends are fastening through sealing.
Further, said quartz glass tube two ends are that the sealing of O circle is fastening.
Further, the gland compression seal is carried out through the O circle in the two ends of said crystal bar.
The side pump module of semiconductor laser according to the invention has the following advantages:
1) adopts closely-coupled diffuse-reflective cavity, can obtain high-transmission efficient;
2) obtain multidirectional pumping through regulating pumping source and the axial corner of crystal bar, and further take to have solved the pumping homogeneity problem from the axle pumping;
3) employing obtains uniform pumping fluorescence distribution from an axle pumping, further reduces thermal effect and improves beam quality.
Description of drawings
Fig. 1 is the cross sectional representation of first embodiment of the invention;
Fig. 2 is that the first embodiment pumping source departs from the cross sectional representation of crystal bar optical axis certain angle formation when the axle pumping;
Fig. 3 is the cross sectional representation of second embodiment of the invention;
Fig. 4 is that the second embodiment pumping source departs from the cross sectional representation of crystal bar optical axis certain angle formation when the axle pumping;
Fig. 5 is the cross sectional representation of third embodiment of the invention;
Fig. 6 is that the 3rd embodiment pumping source departs from the cross sectional representation of crystal bar optical axis certain angle formation when the axle pumping.
Embodiment
Come the side pump module of semiconductor laser according to the invention is done further to specify below in conjunction with accompanying drawing and specific embodiment.
The side pump module of semiconductor laser according to the invention is fixed on through mechanical fixed part on the base plate of laser, and it mainly comprises diffuse-reflective cavity and pumping source; Wherein, Said diffuse-reflective cavity comprises cavity, quartz glass tube and crystal bar; Offer a plurality of logical optical slits in said cavity equal intervals; Said quartz glass tube is positioned at cavity and fits tightly with cavity, and said crystal bar is arranged in the cavity and in quartz glass tube, between said quartz glass tube and crystal bar, is water stream channel; Said pumping source comprises a plurality of luminescence units, and luminescence unit is for being arranged in the said logical optical slits.
In the present invention; Said luminescence unit equidistantly is symmetrically distributed in around the crystal bar in the said diffuse-reflective cavity, and can be around the equidistant anglec of rotation of the optical axis of said crystal bar, wherein; The pump light that luminescence unit produces directly arrives crystal bar through logical optical slits, quartz glass tube, water stream channel; After not passed crystal bar,, and then make pump light homogenize and after reflection, arrive crystal bar once more and absorbed by laser crystal by the diffuse-reflective cavity reflection by the pump light that absorbs fully; So reflect back and forth, thereby reach repeatedly being absorbed of pump light.
In addition, diffuse-reflective cavity cavity geometry according to the invention can be triangle, pentagon, rectangle or circle.
Further, in the present invention, in order to prevent stress fracture and leak that said quartz glass tube two ends can adopt the sealing of O circle fastening; In order to cool off said crystal bar, gland compression seal water stream channel can be carried out through the O circle in the crystal bar two ends.
Shown in Fig. 1, Fig. 2, Fig. 3, Fig. 4, Fig. 5 and Fig. 6, existing is example with diffuse-reflective cavity cavity geometry situation triangular in shape, further specifies the operation principle of the side pump module of semiconductor laser according to the invention.
See Fig. 1, Fig. 2, Fig. 3, Fig. 4, Fig. 5 and shown in Figure 6, show described in the present invention to be disposed with crystal bar 5, quartz glass tube 3 in the diffuse-reflective cavity cavity 2 from the inside to the outside, and between crystal bar 5 and quartz glass tube 3, be water stream channel 4.
Embodiment (one)
After pumping source 1 adopted three direction pumping crystal bars among Fig. 1, the pumping fluorescence distribution presented triangle, thereby had realized that employing three-dimensional surrounding pumping source 1 improved pumping homogeneity.
As the further distortion of structure shown in Fig. 1, be pumping source 1 to be departed from the certain angle of the optical axis of crystal bar 5 form among Fig. 2 from an axle pumping, because there is certain dislocation crossover region in pump light, thereby make pumping homogeneity further improve.
Wherein, n is the pumping direction number, and N is equivalent pumping direction number, and Δ is that θ is the optical axis anglec of rotation along crystal bar around number of revolutions around the crystal bar, and n is that 1～10 scope is optional.
Embodiment (two)
Because the restriction of semiconductor laser size, itself can't realize four-way, five to, six to, seven to, nine to etc. multidirectional tight pumping configuration.Therefore, present embodiment (two) is embodiment (one's) change, and it is through being 60 ° of angles rotations with the pumping source 1 among the embodiment () along the optical axis of crystal bar 5, and then makes postrotational pumping configuration be equivalent to six to pumping configuration.
That is, the pumping source 1 of three-dimensional pumping among Fig. 1 behind the optical axis anglec of rotation θ of crystal bar=60 °, is equivalent to six to pumping configuration.
As the further distortion of structure shown in Fig. 3, be pumping source 1 to be departed from the certain angle of the optical axis of crystal bar 5 form among Fig. 4 from an axle pumping, because there is certain dislocation crossover region in pump light, thereby make pumping homogeneity be further improved.
Wherein, n is the pumping direction number, and N is equivalent pumping direction number, and Δ is that θ is the optical axis anglec of rotation along crystal bar around number of revolutions around the crystal bar, and n is that 1～10 scope is optional.
Embodiment (three)
The same embodiment of present embodiment (two) is the same, also is embodiment (one's) change.
Among Fig. 5; Pumping source 1 is equidistantly around around the crystal bar 5, the pumping source of three-dimensional pumping configuration among Fig. 1 rotated 2 times successively along the optical axis of crystal bar 5, and rotate 40 ° at every turn; Postrotational pumping configuration is equivalent to nine to pumping configuration, has improved pumping homogeneity greatly.
As the further distortion of structure shown in Fig. 5 figure, among Fig. 6 pumping source 1 is departed from the certain angle of the optical axis of crystal bar 5 and form from an axle pumping, because there is certain dislocation crossover region in pump light, thereby can make that pumping homogeneity further improves.
In like manner; In present embodiment (three), can also adopt from the axle pump coupling structure, be about to pumping source 1 and the certain distance of crystal bar 5 off(-)centers; Multidirectional pump light fails to overlap fully at crystal bar 5 centers; Be certain axle that leaves, thereby remove further to improve pumping homogeneity, obtain to be close to the pumping fluorescence distribution of flat-top
Wherein, n is the pumping direction number, and N is equivalent pumping direction number, and Δ is that θ is the optical axis anglec of rotation along crystal bar around number of revolutions around the crystal bar, and n is that 1～10 scope is optional.
The above is merely the preferred embodiments of the present invention; Be not so limit claim of the present invention; Every equivalent structure or equivalent flow process conversion that utilizes specification of the present invention and accompanying drawing content to be done; Or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present invention.
Claims (10)
1. the side pump module of a semiconductor laser is used to improve pumping homogeneity, and is fixed on the base plate of laser through mechanical fixed part, it is characterized in that, comprising:
Diffuse-reflective cavity comprises cavity, is arranged in the quartz glass tube in the cavity and is arranged in the cavity and is arranged in the crystal bar of quartz glass tube, wherein, is provided with a plurality of logical optical slits in the cavity equal intervals; And
Pumping source comprises a plurality of luminescence units, and luminescence unit is for being arranged in the said logical optical slits.
2. the side pump module of semiconductor laser according to claim 1 is characterized in that, is water stream channel between said quartz glass tube and the crystal bar.
3. the side pump module of semiconductor laser according to claim 1 is characterized in that, a plurality of luminescence units of said pumping source equidistantly are symmetrically distributed in around the crystal bar in the said diffuse-reflective cavity, and around the equidistant anglec of rotation of the optical axis of said crystal bar.
4. the side pump module of semiconductor laser according to claim 1 is characterized in that, the cavity geometry of said diffuse-reflective cavity is a kind of in triangle, pentagon, rectangle and the circle.
5. the side pump module of semiconductor laser according to claim 1 is characterized in that, said irreflexive cavity and said quartz glass tube fit tightly.
6. the side pump module of semiconductor laser according to claim 2 is characterized in that, the two ends of said crystal bar are through gland compression seal water stream channel.
7. the side pump module of semiconductor laser according to claim 3 is characterized in that, the angle of the optical axis of said luminescence unit and crystal bar forms from the axle pumping greater than 0 °.
8. according to the side pump module of claim 1 or 5 described semiconductor lasers, it is characterized in that said quartz glass tube two ends are fastening through sealing.
9. the side pump module of semiconductor laser according to claim 8 is characterized in that, said quartz glass tube two ends are that the sealing of O circle is fastening.
10. the side pump module of semiconductor laser according to claim 6 is characterized in that, the gland compression seal is carried out through the O circle in the two ends of said crystal bar.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101008276A CN102545034A (en) | 2011-04-21 | 2011-04-21 | Lateral pump module of semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101008276A CN102545034A (en) | 2011-04-21 | 2011-04-21 | Lateral pump module of semiconductor module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102545034A true CN102545034A (en) | 2012-07-04 |
Family
ID=46351280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101008276A Pending CN102545034A (en) | 2011-04-21 | 2011-04-21 | Lateral pump module of semiconductor module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102545034A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113119331A (en) * | 2021-04-25 | 2021-07-16 | 宁夏中欣晶圆半导体科技有限公司 | Method for improving silicon wafer warp by improving crystal orientation deviation angle of <111> crystal bar |
| CN114323588A (en) * | 2021-12-30 | 2022-04-12 | 北京工业大学 | Device and method for measuring fluorescence distribution in laser crystal of LD side pump module |
| CN114583538A (en) * | 2022-03-04 | 2022-06-03 | 中国科学院理化技术研究所 | Laser gain module of off-axis pump |
| CN115021070A (en) * | 2022-08-03 | 2022-09-06 | 度亘激光技术（苏州）有限公司 | Side pump module and semiconductor laser |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5774488A (en) * | 1994-06-30 | 1998-06-30 | Lightwave Electronics Corporation | Solid-state laser with trapped pump light |
| CN101022204A (en) * | 2006-02-16 | 2007-08-22 | 中国科学院福建物质结构研究所 | Ring semiconductor pumping module |
| US7346092B1 (en) * | 2005-12-16 | 2008-03-18 | Photonics Industries Int'l. | Diode side pumped high pulse energy Nd:YLF lasers |
| CN201113214Y (en) * | 2007-08-03 | 2008-09-10 | 中国科学院上海光学精密机械研究所 | Side-surrounding pump module for rod-shaped laser medium |
| CN201207546Y (en) * | 2008-05-04 | 2009-03-11 | 北京吉泰基业科技有限公司 | Large power laser diode array pump cavity |
| CN201407596Y (en) * | 2008-12-02 | 2010-02-17 | 生茂光电科技股份有限公司 | Lens and arrayed lens for mounting LED light source |
-
2011
- 2011-04-21 CN CN2011101008276A patent/CN102545034A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5774488A (en) * | 1994-06-30 | 1998-06-30 | Lightwave Electronics Corporation | Solid-state laser with trapped pump light |
| US7346092B1 (en) * | 2005-12-16 | 2008-03-18 | Photonics Industries Int'l. | Diode side pumped high pulse energy Nd:YLF lasers |
| CN101022204A (en) * | 2006-02-16 | 2007-08-22 | 中国科学院福建物质结构研究所 | Ring semiconductor pumping module |
| CN201113214Y (en) * | 2007-08-03 | 2008-09-10 | 中国科学院上海光学精密机械研究所 | Side-surrounding pump module for rod-shaped laser medium |
| CN201207546Y (en) * | 2008-05-04 | 2009-03-11 | 北京吉泰基业科技有限公司 | Large power laser diode array pump cavity |
| CN201407596Y (en) * | 2008-12-02 | 2010-02-17 | 生茂光电科技股份有限公司 | Lens and arrayed lens for mounting LED light source |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113119331A (en) * | 2021-04-25 | 2021-07-16 | 宁夏中欣晶圆半导体科技有限公司 | Method for improving silicon wafer warp by improving crystal orientation deviation angle of <111> crystal bar |
| CN114323588A (en) * | 2021-12-30 | 2022-04-12 | 北京工业大学 | Device and method for measuring fluorescence distribution in laser crystal of LD side pump module |
| CN114323588B (en) * | 2021-12-30 | 2023-10-24 | 北京工业大学 | Device and method for measuring laser crystal internal fluorescence distribution of LD side pump module |
| CN114583538A (en) * | 2022-03-04 | 2022-06-03 | 中国科学院理化技术研究所 | Laser gain module of off-axis pump |
| CN114583538B (en) * | 2022-03-04 | 2023-11-14 | 中国科学院理化技术研究所 | Off-axis pumping laser gain module |
| CN115021070A (en) * | 2022-08-03 | 2022-09-06 | 度亘激光技术（苏州）有限公司 | Side pump module and semiconductor laser |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102208748B (en) | Multi-pumping disc solid laser | |
| KR100833820B1 (en) | Optical fiber coupling component | |
| CN102545034A (en) | Lateral pump module of semiconductor module | |
| CN102244349B (en) | Neodymium-doped yttrium vanadate crystal all-solid-state laser with double-wavelength end pump | |
| CN104901155A (en) | High-power fiber laser pump light coupling and signal light beam expanding output apparatus | |
| CN106684687B (en) | A kind of disc solid laser amplifier | |
| CN1299409C (en) | Laser diode with single mode fiber coupling and spatial filter | |
| CN2785213Y (en) | Laser diode with single mode fiber coupling and spatial filter | |
| CN1687840A (en) | Apparatus for aligning and focusing high-power semiconductor laser array light beam | |
| CN204205016U (en) | A kind of Electron Cyclotron Resonance Heating millimeter wave reflector | |
| CN204065464U (en) | The online optoisolator of a kind of liquid cooling hectowatt grade multimode optical fiber | |
| CN103050877A (en) | Splicing technology-based compact type multi-disc tandem-connection solid laser | |
| CN110137788A (en) | A kind of side-pumped laser head device for reducing encircled energy and alleviating fuel factor | |
| CN201238151Y (en) | High-reflection index ceramic concentration cavity used for pump large-scale board bar-shape gain medium | |
| Wang et al. | Investigation of a 100 W solar-pumped disk laser with TEM00 output | |
| CN208753720U (en) | A kind of big folding angles laser resonator | |
| Fan et al. | Design of concentrating system for solar side-pumped slab laser | |
| CN204694920U (en) | A kind of luminous point of semiconductor laser rotates solid matter apparatus for shaping | |
| CN203133400U (en) | Diode-array waveguide homogenization imaging coupling system | |
| Ou et al. | Design of a Fresnel lens for a solar end-pumped solid-state laser | |
| CN202977960U (en) | Compact-type multi-disk serial-connection solid laser based on splicing technology | |
| CN103163648B (en) | A kind of diode array waveguide homogenization imaging coupled system | |
| CN202119983U (en) | Large power semiconductor laser array light beam aligning apparatus | |
| CN109921272A (en) | Totally-enclosed crystal bonding laser resonator without the air gap | |
| CN104466324A (en) | Electron cyclotron resonance heating millimeter wave emitter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120704 |