CN102545020A - Method for packaging variable frequency nonlinear optical chip - Google Patents
Method for packaging variable frequency nonlinear optical chip Download PDFInfo
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- CN102545020A CN102545020A CN2011104461520A CN201110446152A CN102545020A CN 102545020 A CN102545020 A CN 102545020A CN 2011104461520 A CN2011104461520 A CN 2011104461520A CN 201110446152 A CN201110446152 A CN 201110446152A CN 102545020 A CN102545020 A CN 102545020A
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Abstract
A method for packaging a variable frequency nonlinear optical chip includes: firstly, sequentially arranging a film coated solid laser crystal and a film coated nonlinear variable frequency crystal; secondly, placing supports with incident faces and emergent faces parallel to one another respectively between the solid laser crystal and the nonlinear variable frequency crystal; thirdly, adhering the solid layer crystal, the nonlinear variable frequency crystal and the supports together to form a whole; fourthly, fixedly mounting the whole on a heat transfer sink; and fifthly, removing the supports.
Description
Affiliated technical field
This patent relates to a kind of method for packing of frequency translation nonlinear optics chip, is applicable to the solid state laser field based on intracavity frequency doubling.
Background technology
In recent years, the miniature Projection Display industry of laser presses for the red of higher-wattage, and is green, blue tricolor laser device (power of every kind of color needs is from 150mW to 1W).Though 630nm ruddiness can directly be produced by gallium arsenic phosphide (GaAsP) semiconductor laser; Blue light can directly be produced by indium gallium nitrogen (InGaN) semiconductor laser; But by semi-conducting material; For example, indium gallium nitrogen material directly produces green glow (about 530nm) laser and also has very big distance from commercialization, and promptly there are shortcomings such as power is low, efficient is low, the life-span is short and cost an arm and a leg in the semiconductor green (light) laser at present.Therefore high efficiency, high power, highly reliable, low-cost green (light) laser become the bottleneck of laser projection display industry.
The compact green light laser that produces through the diode pumping solid laser frequency multiplication is the optimal path of present green (light) laser.Yttrium vanadate crystal (Nd:YVO with neodymium-doped
4, hereinafter to be referred as Nd:YVO
4) and mix 5% magnesian periodically poled lithium niobate crystal (MgO:PPLN is hereinafter to be referred as MgO:PPLN) through gummed, manufacturing technologies such as optical cement only can obtain＜the green glow output of 150-200 milliwatt.In order to satisfy the needs of laser display, the power of compact green light laser needs further to improve.The present invention provides a kind of MgO:PPLN chip packaging method, can improve the green glow power output, can keep compact structure again.Thereby reduce the cost of manufacture of superpower laser greatly.
Summary of the invention
Low-cost in order to satisfy, produce the demand of high-power green (light) laser in enormous quantities, this patent provides a kind of manufacture method of nonlinear optical crystal, this method with and changing method easily batch making greater than the compact green light module of 500mW.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is further specified.
Fig. 1 has provided the sketch map of first embodiment of the invention;
Fig. 2 has provided the sketch map of second embodiment of the invention;
Embodiment
Fig. 1 has provided the sketch map (making flow chart) of first embodiment of the invention.As shown in Figure 1, it is totally made flow process and is: (1) will plate the solid laser crystal and the nonlinear frequency transformation crystal of film and arrange in order; (2) plane of incidence and the parallel respectively support of exit facet are put between solid laser crystal and the nonlinear frequency transformation crystal; (3) with solid laser crystal, nonlinear frequency transformation crystal and support bond together and form an overall structure; (4) this overall structure be fixedly mounted on heat conduction heat sink on; (5) remove support.In a specific embodiment, crystal plated film mode is: the solid laser crystal for example incident face mask series of Nd:YVO4 passes through 808nm light is high, and is high anti-to 1064nm and 532nm; And its outgoing face mask series is thoroughly high to 1064nm and 532nm; The incident face mask series of nonlinear frequency transformation crystal such as MgO:PPLN is thoroughly high to 1064nm and 532nm; And its outgoing face mask series is high anti-to 1064nm, passes through 532nm is high.Laser crystal; The depth of parallelism of nonlinear crystal and support requires to be less than 10 seconds, reaches the scope of needs so that when the three bonds together through gummed or optical cement, can guarantee the depth of parallelism of exit facet of the plane of incidence and the nonlinear frequency transformation crystal of laser crystal.Further, the overall structure that forms through gummed or optical cement need be through glue fixing on the substrate of heat conduction.Support can be removed through cutting.Cutting can be according to needed size cutting.Glue can be ultraviolet glue, heat-conducting glue or brazing metal.Thermal conductive substrate can be silicon, and metal plate.When adopting brazing metal, Nd:YVO4, MgO:PPLN, substrate need metallization (such as gold-plated) in advance.
Fig. 2 has provided the structural representation (top view) of second embodiment of the invention, and wherein 1 is laser crystal Nd:YVO4, and 2 is nonlinear frequency transformation crystalline MgO: PPLN, and 3 is support, and 4 is line of cut.In a specific embodiment, after making structure as shown in Figure 2 according to manufacture method shown in Figure 1, cutting step promptly cuts according to the line of cut direction among Fig. 2.
It is pointed out that above only with Nd:YVO
4The non-linear frequency multiplication chip of/MgO:PPLN is that example has been explained basic thought of the present invention.Obviously, the present invention can be applicable to based on beyond the frequency multiplication, and for example the laser chip of non-linear process such as difference frequency and frequency is made.It is pointed out that also that simultaneously the above laser crystal that is used to make can be the vanadate crystal of other neodymium-dopeds, like neodymium-doped vanadic acid gadolinium (Nd:GdVO
4) etc., and the non-linear frequency-doubling crystal of accurate phase matched can be other ferroelectric crystals, for example period polarized lithium tantalate (PPLT), period polarized potassium titanium oxide phosphate (PPKTP) etc.
Claims (5)
1. the method for packing of the non-linear chip of compact is characterized in that, its encapsulation flow process is: (1) will plate the solid laser crystal and the nonlinear frequency transformation crystal of film and arrange in order; (2) plane of incidence and the parallel respectively support of exit facet are put between solid laser crystal and the nonlinear frequency transformation crystal; (3) with solid laser crystal, nonlinear frequency transformation crystal and support bond together and form an overall structure; (4) this overall structure be fixedly mounted on heat conduction heat sink on; (5) remove support;
2. non-linear chip packaging method according to claim 1 is characterized in that, two face strictnesses perpendicular to optical direction of solid laser crystal, nonlinear crystal and support are parallel;
3. non-linear chip packaging method according to claim 1 is characterized in that, this is placed between solid laser crystal and the nonlinear frequency transformation crystal, laser crystal, and nonlinear crystal and support form an overall structure through the mode of gummed or optical cement;
4. non-linear chip packaging method according to claim 1 is characterized in that, the mode of this overall structure through gummed, optical cement or welding be installed in heat conduction heat sink on;
5. non-linear chip packaging method according to claim 1 is characterized in that this support is removed through cutting mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104461520A CN102545020A (en) | 2011-12-28 | 2011-12-28 | Method for packaging variable frequency nonlinear optical chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104461520A CN102545020A (en) | 2011-12-28 | 2011-12-28 | Method for packaging variable frequency nonlinear optical chip |
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| CN102545020A true CN102545020A (en) | 2012-07-04 |
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| CN2011104461520A Pending CN102545020A (en) | 2011-12-28 | 2011-12-28 | Method for packaging variable frequency nonlinear optical chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104184024A (en) * | 2013-05-23 | 2014-12-03 | 深南电路有限公司 | Method of processing laser and laser |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2399865Y (en) * | 1999-10-18 | 2000-10-04 | 福建华科光电有限公司 | Micro-chip laser device |
| WO2011079389A1 (en) * | 2009-12-31 | 2011-07-07 | Ye Hu | Method of nonlinear crystal packaging and its application in diode pumped solid state lasers |
| WO2011140641A1 (en) * | 2010-05-11 | 2011-11-17 | Ye Hu | Packaging method of laser and nonlinear crystal and its application in diode pumped solid state lasers |
-
2011
- 2011-12-28 CN CN2011104461520A patent/CN102545020A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2399865Y (en) * | 1999-10-18 | 2000-10-04 | 福建华科光电有限公司 | Micro-chip laser device |
| WO2011079389A1 (en) * | 2009-12-31 | 2011-07-07 | Ye Hu | Method of nonlinear crystal packaging and its application in diode pumped solid state lasers |
| WO2011140641A1 (en) * | 2010-05-11 | 2011-11-17 | Ye Hu | Packaging method of laser and nonlinear crystal and its application in diode pumped solid state lasers |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104184024A (en) * | 2013-05-23 | 2014-12-03 | 深南电路有限公司 | Method of processing laser and laser |
| CN104184024B (en) * | 2013-05-23 | 2017-10-10 | 深南电路有限公司 | Process the method and laser of laser |
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Application publication date: 20120704 |