CN102544284A - Light emitting diode structure and manufacturing method thereof - Google Patents
Light emitting diode structure and manufacturing method thereof Download PDFInfo
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- CN102544284A CN102544284A CN2011100422813A CN201110042281A CN102544284A CN 102544284 A CN102544284 A CN 102544284A CN 2011100422813 A CN2011100422813 A CN 2011100422813A CN 201110042281 A CN201110042281 A CN 201110042281A CN 102544284 A CN102544284 A CN 102544284A
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Abstract
The invention discloses a light-emitting diode structure and a manufacturing method thereof. A current distribution auxiliary structure is additionally arranged between the electrode with the net structure and the luminous layer, so that current can flow from the electrode to the current distribution auxiliary structure, and the effect of uniformly dispersing the current is achieved. In addition, a horizontal gap and a vertical distance are formed between the current distribution auxiliary structure and the electrode, and an optimal light emitting effect can be obtained through the matching of the current distribution auxiliary structure and the electrode.
Description
Technical field
The present invention relates to a kind of light emitting diode construction and manufacturing approach thereof, particularly relate to a kind of light emitting diode construction and manufacturing approach thereof that increases amount of light.
Background technology
The tradition light-emitting diode since semi-conducting material refractive index (about 2.2～3.8) than air refraction (about 1) height; Thereby external quantum efficiency receives the influence of total reflection effect; The angle of light that produces when luminescent layer promptly produces total reflection during greater than critical angle, part light through total reflection several times after; Absorbed by epitaxial loayer or baseplate material, light extraction efficiency is difficult for improving.
United States Patent (USP) (US 6,291,839) proposes the mesh electrode structure, to improve light extraction efficiency.Please with reference to Fig. 1 and Fig. 2, Fig. 1 is the schematic perspective view of the mesh electrode structure of United States Patent (USP) (US 6,291,839), and Fig. 2 is along the generalized section of A-A ' hatching among Fig. 1.In Fig. 1 and Fig. 2; On p type semiconductor layer 200, form the mesh electrode 230 of a plurality of openings 210 of tool; The electric current diffusion effect that replaces the conductive layer of conventional transparent conductive metal film, and can be from opening 210 outgoing to extraneous, to improve amount of light at the light of active layer 220 generations.Yet, being the light-shading effect of avoiding mesh electrode 230 parts to cause, general hope tapers to the live width of mesh electrode 230 for example less than 2 microns; Yet; After mesh electrode 230 attenuated, it is big that opening 210 sizes become, on the contrary can be because of electric current in the not good characteristic of the lateral transport property of p type semiconductor layer 200; Cause CURRENT DISTRIBUTION uneven, and can't effectively promote luminous efficiency.On the other hand, improve the CURRENT DISTRIBUTION uniformity, can make mesh electrode 230 shading areas become big, opening 210 size decreases again, cause light to take out inefficient if increase mesh electrode 230 distribution densities.
Summary of the invention
In view of this, the object of the invention is providing a kind of light emitting diode construction and manufacturing approach thereof exactly, increases the amount of light of light-emitting diode thus.
For reaching above-mentioned purpose, the light emitting diode construction according to the embodiment of the invention comprises: substrate, epitaxial structure, the first electrical electrode, second electrical electrode and the CURRENT DISTRIBUTION supplementary structure.Epitaxial structure is positioned on the substrate; Epitaxial structure comprises luminescent layer, the first electrical semiconductor layer, the second electrical semiconductor layer; Wherein, the first electrical semiconductor layer is positioned on the substrate, and luminescent layer is positioned on the first electrical semiconductor layer and the second electrical semiconductor layer is positioned on the luminescent layer.In addition, the first electrical electrode and the first electrical semiconductor layer electrically connect, and the second electrical electrode is positioned on the second electrical semiconductor layer and with the second electrical semiconductor layer and electrically connects.In addition, the CURRENT DISTRIBUTION supplementary structure and electrically connects with the second electrical semiconductor layer of part at least between the luminescent layer and the second electrical electrode.Wherein, the second electrical electrode for example comprises contact mat and a plurality of extension electrode, and a little therewith extension electrodes of contact mat electrically connect; And these a little extension electrodes are network structure; In other words, see through contact mat and conduct electrical currents to extension electrode, make electric current be scattered in the second electrical semiconductor layer.And the CURRENT DISTRIBUTION supplementary structure is positioned among the second electrical semiconductor layer, and the CURRENT DISTRIBUTION supplementary structure is to be used for assisting conduction current to give in the light emitting diode construction.In other words, when electric current when extension electrode scatter, electric current can conduct to the CURRENT DISTRIBUTION supplementary structure, thus even scattered current.In addition, the CURRENT DISTRIBUTION supplementary structure for example be positioned at the corresponding second electrical electrode opening the below and be positioned among the semiconductor layer, so the light that produces at luminescent layer has many amount of lights, increase light thus and take out efficient.
In addition; The embodiment of the invention also proposes a kind of manufacturing approach of light emitting diode construction; Comprise: the first of substrate, the first electrical semiconductor layer, luminescent layer and the second electrical semiconductor layer is provided, and wherein the first electrical semiconductor layer is another person that one of p type semiconductor layer and n type semiconductor layer person, the second electrical semiconductor layer are p type semiconductor layer and n type semiconductor layer; Then utilize preset shape of photoresist definition and position on the second electrical semiconductor layer; Then the deposits conductive material layer is on the second electrical semiconductor layer and photoresist; Then utilize the method for peeling off to remove photoresist and be positioned at the conductive material layer on the photoresist; The second portion that the second electrical semiconductor layer then is provided is in the first of the conductive material layer and the second electrical semiconductor layer; And provide the first electrical electrode and the second electrical electrode, the first electrical electrode and the first electrical semiconductor layer to electrically connect and the second electrical electrode and the second electrical semiconductor layer electric connection, wherein, the second electrical electrode has network structure.
Hold the above, according to light emitting diode construction of the present invention and manufacturing approach thereof, it can have a following advantage:
(1) the CURRENT DISTRIBUTION supplementary structure more is dispersed in electric current in the substrate.
(2) the CURRENT DISTRIBUTION supplementary structure be arranged in the corresponding second electrical electrode opening the below and be positioned at the second electrical semiconductor layer, so the light that produces at luminescent layer has many amount of lights, increase light thus and take out efficient.
For making those skilled in the art further understanding and understanding arranged to technical characterictic of the present invention and the effect that reached, with preferred embodiment and cooperate detailed explanation as after.
Description of drawings
Fig. 1 is the schematic perspective view of the mesh electrode structure of United States Patent (USP) (US 6,291,839).
Fig. 2 is along the generalized section of A-A ' hatching among Fig. 1.
Fig. 3 is the generalized section of first embodiment of light emitting diode construction of the present invention.
Fig. 4 is the CURRENT DISTRIBUTION sketch map of first embodiment of light emitting diode construction of the present invention.
Fig. 5 is the mesh electrode and the CURRENT DISTRIBUTION supplementary structure schematic top plan view of light emitting diode construction of the present invention.
Fig. 6 is mesh electrode and the CURRENT DISTRIBUTION supplementary structure schematic top plan view of second embodiment of light emitting diode construction of the present invention.
Fig. 7 is mesh electrode and the CURRENT DISTRIBUTION supplementary structure schematic top plan view of the 3rd embodiment of light emitting diode construction of the present invention.
Fig. 8 is the generalized section of the 4th embodiment of light emitting diode construction of the present invention.
Fig. 9 is the generalized section of the 5th embodiment of light emitting diode construction of the present invention.
Figure 10 is the flow chart of the manufacturing approach of light emitting diode construction of the present invention.
Description of reference numerals
200:P type semiconductor layer 210: opening
220: active layer 230: mesh electrode
300: substrate 301: luminescent layer
303: the second electrical semiconductor layers of 302: the first electrical semiconductor layers
305: the second electrical semiconductor layers of 304: the first electrical semiconductor layers
307: the second electrical electrodes of 306: the first electrical electrodes
310: epitaxial structure 311: contact mat
312: extension electrode 313: extension electrode
320: CURRENT DISTRIBUTION supplementary structure 330: reflector
340: horizontal clearance 350: dielectric layer
360: reflector 400: step
410: step 420: step
430: step 440: step
450: step
Embodiment
Below will light emitting diode construction and manufacturing approach thereof according to the preferred embodiment of the present invention be described, and be convenient to understand that the similar elements among the following embodiment is explained with identical symbology for making with reference to relevant drawings.
See also Fig. 3, Fig. 3 is the generalized section of first embodiment of light emitting diode construction of the present invention.As shown in Figure 3, light emitting diode construction of the present invention comprises substrate 300, epitaxial structure 310, first electrical electrode 306, second electrical electrode 307 and the CURRENT DISTRIBUTION supplementary structure 320.Epitaxial structure 310 comprises luminescent layer 301, the first electrical semiconductor layer 302 and the second electrical semiconductor layer 303.In present embodiment, first electrically for example is the N type, and second electrically for example is the P type.Epitaxial structure 310 is positioned on the substrate 300, and wherein, the first electrical semiconductor layer 302 is positioned on the substrate 300, and luminescent layer 301 is positioned on the first electrical semiconductor layer 302, and the second electrical semiconductor layer 303 is positioned on the luminescent layer 301.Luminescent layer 301 is between the first electrical semiconductor layer 302 and the second electrical semiconductor layer 303, that is luminescent layer 301 is between n type semiconductor layer and p type semiconductor layer.By p type semiconductor layer the hole is provided, n type semiconductor layer provides electronics, and the electron hole is used for producing light for carrying out compound (recombine) in the luminescent layer 301.The material of substrate 300 can for example be sapphire (sapphire), carborundum (SiC), GaAs (Ga As), gallium nitride (GaN) or silicon (Si).The first electrical semiconductor layer 302 is for example for to utilize Metalorganic chemical vapor deposition method (MOCVD) or molecular beam epitaxy (MBE) to be grown in the n type gallium nitride series material layer on the substrate 300; Wherein, One deck resilient coating (not illustrating) of also can growing between substrate 300 and the n type gallium nitride series material layer; The material of resilient coating (not illustrating) for example is aluminium nitride (AlN) or gallium nitride, and resilient coating is to be used for reducing substrate 300 and the unmatched problem of n type gallium nitride series material layer crystal lattice.Luminescent layer 301 is formed on the n type gallium nitride series material layer, and luminescent layer 301 for example is multiple quantum trap (MQW) structure of aluminum indium nitride gallium (AlInGaN).The second electrical semiconductor layer 303 is formed on the luminescent layer 301, and the second electrical semiconductor layer 303 for example is a P type gallium nitride series material layer.In addition; In order to increase the chance that electronics and hole combine in luminescent layer 301; Can growth N type bond course (n-cladding layer) between luminescent layer 301 and the n type gallium nitride series material layer or between the serial material layer of luminescent layer 301 and P type gallium nitride growing P-type bond course (p-claddinglayer), thus electronics or hole are confined in the luminescent layer 301.In addition, the first electrical electrode 306 and the first electrical semiconductor layer 302 electrically connect, and the second electrical electrode 307 and second electrical semiconductor layer 303 electric connections.In addition, in the present embodiment, the second electrical electrode 307 is network structure, and mesh electrode comprises contact mat (contact pad) and a plurality of extension electrode, in the literary composition more detailed description is being arranged after a while.CURRENT DISTRIBUTION supplementary structure 320 and electrically connects with this second electrical semiconductor layer 303 of part at least between the luminescent layer 301 and the second electrical electrode 307, gives this light emitting diode construction in order to assist conduction current.For example, CURRENT DISTRIBUTION supplementary structure 320 is arranged in p type semiconductor layer, and CURRENT DISTRIBUTION supplementary structure 320 is to be used for assisting conduction current to give epitaxial structure 310.Wherein, CURRENT DISTRIBUTION supplementary structure 320 for example is the laminated construction of nickel/gold (Ni/Au), nickel/silver (Ni/Ag), nickel/gold/nickel (Ni/Au/Ni) or nickel/silver/nickel (Ni/Ag/Ni), also or CURRENT DISTRIBUTION supplementary structure 320 for example is a transparent conductive oxide film.More particularly, transparent conductive oxide film for example is tin indium oxide (ITO) or zinc oxide (ZnO).In addition, the width of CURRENT DISTRIBUTION supplementary structure 320 for example is 1 to 5 micron.Wherein, the material of CURRENT DISTRIBUTION supplementary structure 320 can be the good material of conductivity, and can select suitable thickness, to reduce the resistance of CURRENT DISTRIBUTION supplementary structure 320, increases the effect that auxiliary current distributes.
See also Fig. 4 and Fig. 5, Fig. 4 is the CURRENT DISTRIBUTION sketch map of first embodiment of light emitting diode construction of the present invention, and Fig. 5 is the mesh electrode and the CURRENT DISTRIBUTION supplementary structure schematic top plan view of light emitting diode construction of the present invention.To state the direction of representing electric current to move from the lead-in wire of the extension electrode of the second electrical electrode 307 and CURRENT DISTRIBUTION supplementary structure 320s among Fig. 4 especially clearly at this.In the light emitting diode construction of the present invention, the second electrical electrode 307 is a mesh electrode, comprises that contact mat 311 and a plurality of extension electrode 312 and contact mat 311 electrically connect, and these a plurality of extension electrodes 312 form network structure.Also have horizontal clearance 340 between these a plurality of extension electrodes 312 and the adjacent CURRENT DISTRIBUTION supplementary structure 320, horizontal clearance 340 is the distance of side horizontal direction of side and the adjacent CURRENT DISTRIBUTION supplementary structure 320 of extension electrode 312.In addition; Because electric current side direction transmission effect in epitaxial structure 310 only reaches in limited distance; For electric current is evenly transmitted, can for example be preferably 0 to 1 micron through the distance in controlling level gap 340 in embodiments of the present invention in epitaxial structure 310; The best is 0.5 to 1 micron, is beneficial to electric current effectively is passed to adjacent CURRENT DISTRIBUTION supplementary structure 320 respectively from the extension electrode 312 of the second electrical electrode 307 a side.In other words; When electric current down transmits from mesh electrode; Electric current can rough side direction be passed to CURRENT DISTRIBUTION supplementary structure 320; Because the material of CURRENT DISTRIBUTION supplementary structure 320 is the good material of conductivity, electric current can be passed to the opposite side of CURRENT DISTRIBUTION supplementary structure easily, thereby solves the shortcoming that electric current is difficult in the p type semiconductor layer lateral transport in the known technology.Then, electric current can continue to be passed to luminescent layer 301, the first electrical semiconductor layer 302 and the first electrical electrode 306 downwards from left side, right side or the downside of CURRENT DISTRIBUTION supplementary structure 320.Through a plurality of extension electrodes 312 of mesh electrode and the collocation of a plurality of CURRENT DISTRIBUTION supplementary structures 320, electric current can be distributed in whole light emitting diode construction equably, thereby luminous efficiency can obtain to promote.
See also Fig. 6 to Fig. 7; Wherein, Fig. 6 is that mesh electrode and CURRENT DISTRIBUTION supplementary structure schematic top plan view and Fig. 7 of second embodiment of light emitting diode construction of the present invention is mesh electrode and the CURRENT DISTRIBUTION supplementary structure schematic top plan view of the 3rd embodiment of light emitting diode construction of the present invention.Among Fig. 6 to Fig. 7, the second electrical electrode 307 is a mesh electrode, comprises contact mat 311 and a plurality of extension electrode 312, and wherein contact mat 311 electrically connects with extension electrode 312.A plurality of extension electrodes 312 intersperse among on the second electrical semiconductor layer, and form network structure, and form ohmic contact with the second electrical semiconductor layer.In the embodiment of the invention, network structure is not specially limited its shape, for example can have the network structure of opening for radial, checkerboard or other.Conduction through contact mat 311 is arrived extension electrode 312 with current delivery, and via a plurality of extension electrodes 312 electric current is delivered to the second electrical semiconductor layer downwards.Wherein, the live width of extension electrode 312 for example is smaller or equal to 2 microns, to reduce the shading area.In addition; Extension electrode 312 for example is 2 to 7 microns with the aperture pitch of adjacent extension electrode 313; And CURRENT DISTRIBUTION supplementary structure 320 is preferably placed in the second electrical semiconductor layer between extension electrode 312 and the extension electrode 313, and forms ohmic contact with the second electrical semiconductor layer.Moreover CURRENT DISTRIBUTION supplementary structure 320 is can be separately independent between extension electrode 312 and extension electrode 313, or interconnects and become overall structure.The live width of CURRENT DISTRIBUTION supplementary structure 320 can for example be 1 to 5 micron, and has 0 to 1 micron horizontal clearance 340 with adjacent extension electrode 312,313.
Please continue with reference to Fig. 3, light emitting diode construction of the present invention also comprises reflector 330, is formed on the CURRENT DISTRIBUTION supplementary structure 320.Reflector 330 is located at least one side of CURRENT DISTRIBUTION supplementary structure 320 and is used for reflecting from luminescent layer 301 and produces to the light of CURRENT DISTRIBUTION supplementary structure 320.In addition, CURRENT DISTRIBUTION supplementary structure 320 upsides, downside, left side and right side also can be located at simultaneously in reflector 330.Represent the possible mobile route of light from the arrow of luminescent layer 301s; For instance; When CURRENT DISTRIBUTION supplementary structure 320 was made up of lighttight electric conducting material, through forming reflector 330 on CURRENT DISTRIBUTION supplementary structure 320 surfaces, light can reflect thus and transmit to the outside; Reduce light and stopped absorption, and then increased the effect of bright dipping by CURRENT DISTRIBUTION supplementary structure 320.In other words, when a side of CURRENT DISTRIBUTION supplementary structure 320 is located in reflector 330, can increases light and take out efficient.And; CURRENT DISTRIBUTION supplementary structure 320 has a segment distance with the extension electrode 312 of mesh electrode in vertical direction; Simultaneously also have horizontal clearance 340 in the horizontal direction, thereby light all can be by these gap outgoing to extraneous with adjacent extension electrode 312.In addition, CURRENT DISTRIBUTION supplementary structure 320 also can utilize the electric conducting material of printing opacity to form, and for example is tin indium oxide (ITO) or zinc oxide (ZnO).When CURRENT DISTRIBUTION supplementary structure 320 is made up of the electric conducting material of printing opacity; Light is penetrating current distribution supplementary structure 320 and be unlikely to be stopped absorption directly; Thereby can not need form reflector 330 on the surface of CURRENT DISTRIBUTION supplementary structure 320, and light taking-up efficient can further promote.In the embodiment of the invention, substrate 300 is with respect to the opposite side of epitaxial structure 310, and more optionally the deposition of reflective layer 360, is beneficial to light bright dipping after 360 reflections of reflector of directive substrate 300.
See also Fig. 8, Fig. 8 is the generalized section of the 4th embodiment of light emitting diode construction of the present invention.Among the figure, light emitting diode construction comprises substrate 300, epitaxial structure 310, first electrical electrode 306, the second electrical electrode 307, CURRENT DISTRIBUTION supplementary structure 320 and dielectric layer 350.Wherein, epitaxial structure 310 comprises luminescent layer 301, the first electrical semiconductor layer 304 and the second electrical semiconductor layer 305.The first electrical semiconductor layer 304 is positioned on the substrate 300, and luminescent layer 301 is positioned on the first electrical semiconductor layer 304, and the second electrical semiconductor layer 305 is positioned on the luminescent layer 301.In present embodiment, first electrically for example is the N type, and second electrically for example is the P type.The first electrical electrode 306 and the first electrical semiconductor layer 304 electrically connect, and the second electrical electrode 307 and second electrical semiconductor layer 305 electric connections.In present embodiment, the second electrical electrode 307 is network structure, and mesh electrode comprises contact mat (contactpad) and a plurality of extension electrode.The embodiment of the invention roughly is similar to first embodiment; Its main difference is: light effect in order to increase; Dielectric layer 350 optionally on the second electrical electrode 307; The refractive index of dielectric layer 350 preferably is lower than the refractive index of the second electrical semiconductor layer 305, and is higher than the refractive index of packaging adhesive material or air.Dielectric layer 350 for example is silicon dioxide or silicon nitride.It should be noted that; Dielectric layer 350 is not limited to cover fully the second electrical electrode 307; If when covering the second electrical electrode 307 fully, can define the zone of contact mat (not illustrating) through the etched mode of for example photoetching, in order to the electric connection of the second electrical electrode 307.In addition, for increase light effect also can be on the second electrical electrode 307 deposit transparent conductive layer (not illustrating), transparency conducting layer (not illustrating) for example is tin indium oxide or zinc oxide.Transparency conducting layer (not illustrating) has translucent effect, takes out effect so can increase light.
See also Fig. 9, Fig. 9 is the generalized section of the 5th embodiment of light emitting diode construction of the present invention.Among the figure, light emitting diode construction is a vertical electrode formula light-emitting diode, comprises substrate 300, CURRENT DISTRIBUTION supplementary structure 320, epitaxial structure 310, first electrical electrode 306, second electrical electrode 307 and the dielectric layer 350.Wherein, epitaxial structure 310 comprises first electrical semiconductor layer 304, second electrical semiconductor layer 305 and the luminescent layer 301.The first electrical semiconductor layer 304 is positioned on the substrate 300, and luminescent layer 301 is positioned on the first electrical semiconductor layer 304, and the second electrical semiconductor layer 305 is positioned on the luminescent layer 301.In present embodiment, first electrically for example is the P type, and second electrically for example is the N type.For example, the first electrical semiconductor layer 304 is a P type gallium nitride series material layer, and the second electrical semiconductor layer 305 is a n type gallium nitride series material layer, and the first electrical electrode 306 is that the P type electrode and the second electrical electrode 307 are N type electrode.Wherein, the material of substrate 300 for example is electrically-conductive backing plates such as silicon, copper or carborundum.For example have knitting layer (not illustrating) between the substrate 300 and the first electrical semiconductor layer 304, the material of knitting layer (not illustrating) for example is titanium/gold.In addition, the first electrical electrode 306 is formed at the another side of the first electrical semiconductor layer 304 with respect to substrate 300.Then on substrate 300, deposition is piled up the first electrical semiconductor layer 304, luminescent layer 301, the second electrical semiconductor layer 305 and the tool cancellated second electrical electrode 307 in regular turn.The exemplifying embodiment of the second electrical electrode 307 is similar to previous embodiment, has contact mat and a plurality of extension electrode, repeats no more at this.Wherein, CURRENT DISTRIBUTION supplementary structure 320 is arranged in the second electrical semiconductor layer 305, and forms ohmic contact with the second electrical semiconductor layer 305.In addition, can selective deposition dielectric layer 350 on the second electrical electrode 307, the refractive index of dielectric layer 350 is less than the second electrical semiconductor layer 305.The collocation of a plurality of extension electrodes and a plurality of CURRENT DISTRIBUTION supplementary structures 320 through the second electrical electrode 307, electric current can be distributed in whole light emitting diode construction equably, thereby luminous efficiency can obtain to promote.
See also Figure 10, Figure 10 is the flow chart of the manufacturing approach of light emitting diode construction of the present invention.Among Figure 10; Step 400 is for accomplishing the manufacturing step of light emitting diode construction of the present invention before carrying out CURRENT DISTRIBUTION supplementary structure related process; Comprise the first that substrate, the first electrical semiconductor layer, luminescent layer and the second electrical semiconductor layer are provided, wherein the first electrical semiconductor layer is another person that one of p type semiconductor layer and N type semiconductor person, the second electrical semiconductor layer are p type semiconductor layer and n type semiconductor layer.Wherein, the first electrical semiconductor layer for example is one of P type gallium nitride layer or n type gallium nitride layer person, another person that the second electrical semiconductor layer then is P type gallium nitride or n type gallium nitride layer.In this step, the first of the second electrical semiconductor layer has first thickness of the second electrical semiconductor layer, and the second electrical semiconductor layer of all the other thickness can form after CURRENT DISTRIBUTION supplementary structure technology is accomplished again.Then step 410 is to 430 for carrying out the CURRENT DISTRIBUTION supplementary structure manufacturing step of being correlated with.Step 410 is in the first of the second electrical semiconductor layer of step 400, utilizes the shape and the position of photoresist definition predetermined current distribution supplementary structure.In detail, utilize photoetching and etched mode, the position at desire formation CURRENT DISTRIBUTION supplementary structure removes the photoresist layer and optionally removes the second electrical semiconductor layer, to expose those parts of the second electrical semiconductor layer.Step 420 reaches on the photoresist that does not remove in second semiconductor layer that exposes for the deposits conductive material layer.In other words; The part of conductive material layer is deposited on the second electrical semiconductor layer that exposes that defines position and shape; Another part is deposited on the photoresist layer that does not remove, and with CURRENT DISTRIBUTION supplementary structure predeterminated position on conductive material layer to have a height section poor.
Then, step 430 is peeled off method (Lift-Off) and removes this photoresist and be positioned at the conductive material layer on the photoresist for utilizing.Will should be mentioned that especially that here the shape of utilizing photoresist definition conductive material layer is with after position and the deposits conductive material layer, conductive material layer is deposited on photoresist simultaneously and does not have the position of photoresist.At this moment, see through the method for peeling off and remove photoresist, the conductive layer that is positioned at the position that does not have photoresist will carry over, and the conductive layer that is positioned at the position that photoresist is arranged will be removed.Thus, the conductive material layer that carries on the second electrical semiconductor layer that does not have photoresist has formed the CURRENT DISTRIBUTION supplementary structure.
Then, step 440 for second portion that the second electrical semiconductor layer is provided in the first of the CURRENT DISTRIBUTION supplementary structure and the second electrical semiconductor layer.Wherein, the second portion of the second electrical semiconductor layer for example is another person of P type gallium nitride layer and n type gallium nitride layer, and has second thickness.In other words, the second electrical semiconductor layer is made up of first thickness and second thickness, and the CURRENT DISTRIBUTION supplementary structure is arranged in the second electrical semiconductor layer.At last, form the first electrical electrode and the second electrical electrode.Step 450 is for providing the tool cancellated second electrical electrode on the second electrical semiconductor layer, and electrically connects with the second electrical semiconductor layer, and the first electrical electrode and the first electrical semiconductor layer electric connection.Wherein the first electrical electrode is one of P type electrode and N type electrode person, another person that the second electrical electrode is P type electrode and N type electrode.In embodiment, before forming the first electrical electrode, comprise that also the second electrical semiconductor layer, luminescent layer and the first electrical semiconductor layer that remove part are to expose the first electrical semiconductor layer of part.Then the first electrical electrode be formed on the first electrical semiconductor layer and with the first electrical semiconductor layer electric connection.In another embodiment, if substrate is an electrically-conductive backing plate, the first electrical electrode can be formed on the opposite side of substrate with respect to the first electrical semiconductor layer, and electrically connects with the first electrical semiconductor layer.
The above is merely illustrative, but not is restricted person.Anyly do not break away from spirit of the present invention and category, and, all should be included in the claim its equivalent modifications of carrying out or change.
Claims (18)
1. light emitting diode construction comprises:
Substrate;
Epitaxial structure is positioned on this substrate, comprising:
The first electrical semiconductor layer is positioned on this substrate;
Luminescent layer is positioned on this first electrical semiconductor layer; And
The second electrical semiconductor layer is positioned on this luminescent layer;
The first electrical electrode electrically connects with this first electrical semiconductor layer;
The second electrical electrode is positioned on this second electrical semiconductor layer and electrically connects with this second electrical semiconductor layer; And
The CURRENT DISTRIBUTION supplementary structure, between this luminescent layer and this second electrical electrode, and with this second electrical semiconductor layer electric connection of part at least.
2. light emitting diode construction as claimed in claim 1, wherein this first electrical semiconductor layer is a n type gallium nitride series material layer, this second electrical semiconductor layer is a P type gallium nitride series material layer.
3. light emitting diode construction as claimed in claim 1, wherein this first electrical semiconductor layer is a P type gallium nitride series material layer, this second electrical semiconductor layer is a n type gallium nitride series material layer.
4. light emitting diode construction as claimed in claim 1, wherein this second electrical electrode comprises contact mat and a plurality of extension electrode, and wherein, these a plurality of extension electrodes and this contact mat electrically connect, and these a plurality of extension electrodes form network structure.
5. light emitting diode construction as claimed in claim 4 also comprises dielectric layer, and this dielectric layer is located on this second electrical electrode, and wherein, the refractive index of this dielectric layer is less than this second electrical semiconductor layer.
6. light emitting diode construction as claimed in claim 4, wherein the live width of these a plurality of extension electrodes is smaller or equal to 2 microns.
7. light emitting diode construction as claimed in claim 4, wherein the spacing of these a plurality of extension electrodes is 2 to 7 microns.
8. light emitting diode construction as claimed in claim 1, wherein this CURRENT DISTRIBUTION supplementary structure is positioned among this second electrical semiconductor layer and with this second electrical semiconductor layer and forms ohmic contact.
9. light emitting diode construction as claimed in claim 8, wherein this CURRENT DISTRIBUTION supplementary structure is between adjacent two of these a plurality of extension electrodes.
10. light emitting diode construction as claimed in claim 9, wherein this CURRENT DISTRIBUTION supplementary structure and adjacent one of them person of these a plurality of extension electrodes have horizontal clearance, and the length of this horizontal clearance is 0 to 1 micron.
11. light emitting diode construction as claimed in claim 9, wherein the width of this CURRENT DISTRIBUTION supplementary structure is 1 to 5 micron.
12. light emitting diode construction as claimed in claim 9 also comprises the reflector, a side of this CURRENT DISTRIBUTION supplementary structure is located in this reflector.
13. light emitting diode construction as claimed in claim 8, wherein this CURRENT DISTRIBUTION supplementary structure is a plurality of absolute construction.
14. light emitting diode construction as claimed in claim 8, wherein this CURRENT DISTRIBUTION supplementary structure is interconnective overall structure.
15. light emitting diode construction as claimed in claim 1, wherein this CURRENT DISTRIBUTION supplementary structure is Ni/Au, Ni/Ag, Ni/Au/Ni or Ni/Ag/Ni.
16. light emitting diode construction as claimed in claim 1, wherein this CURRENT DISTRIBUTION supplementary structure is a transparent conductive oxide film.
17. the manufacturing approach of a light emitting diode construction comprises:
The first of substrate, the first electrical semiconductor layer, luminescent layer and the second electrical semiconductor layer is provided, and wherein this first electrical semiconductor layer is that one of p type semiconductor layer and n type semiconductor layer person, this second electrical semiconductor layer are another person in p type semiconductor layer and the n type semiconductor layer;
Utilize preset shape of photoresist definition and position on this second electrical semiconductor layer;
The deposits conductive material layer is on this second electrical semiconductor layer and this photoresist;
Utilization is peeled off method and is removed this photoresist and be positioned at this conductive material layer on this photoresist;
The second portion that the second electrical semiconductor layer is provided is in the first of this conductive material layer and this second electrical semiconductor layer; And
The first electrical electrode and the second electrical electrode are provided, and this first electrical electrode and this first electrical semiconductor layer electric connection and this second electrical electrode and this second electrical semiconductor layer electrically connect, and wherein, this second electrical electrode has network structure.
18. the manufacturing approach of light emitting diode construction as claimed in claim 17; Wherein before this first electrical electrode is provided; Also comprise this second electrical semiconductor layer, this luminescent layer and this first electrical semiconductor layer that remove part exposing this first electrical semiconductor layer partly, this first electrical electrode be formed on this first electrical semiconductor layer and with this first electrical semiconductor layer electric connection.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW99144441A TW201228019A (en) | 2010-12-17 | 2010-12-17 | Light emitting diode structure and method for manufacturing the same |
| TW099144441 | 2010-12-17 |
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| Publication Number | Publication Date |
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| CN102544284A true CN102544284A (en) | 2012-07-04 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112670386A (en) * | 2020-12-31 | 2021-04-16 | 深圳第三代半导体研究院 | Light emitting diode and manufacturing method thereof |
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| US20040135166A1 (en) * | 2002-10-23 | 2004-07-15 | Shin-Etsu Handotai Co., Ltd. | Light-emitting device and method of fabricating the same |
| CN101689587A (en) * | 2007-06-15 | 2010-03-31 | 罗姆股份有限公司 | Semiconductor light-emitting device |
| JP2010157551A (en) * | 2008-12-26 | 2010-07-15 | Toyoda Gosei Co Ltd | Group iii nitride semiconductor light emitting element and method of manufacturing the same |
| JP2010199247A (en) * | 2009-02-24 | 2010-09-09 | Panasonic Electric Works Co Ltd | Light-emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040135166A1 (en) * | 2002-10-23 | 2004-07-15 | Shin-Etsu Handotai Co., Ltd. | Light-emitting device and method of fabricating the same |
| CN101689587A (en) * | 2007-06-15 | 2010-03-31 | 罗姆股份有限公司 | Semiconductor light-emitting device |
| JP2010157551A (en) * | 2008-12-26 | 2010-07-15 | Toyoda Gosei Co Ltd | Group iii nitride semiconductor light emitting element and method of manufacturing the same |
| JP2010199247A (en) * | 2009-02-24 | 2010-09-09 | Panasonic Electric Works Co Ltd | Light-emitting device |
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| CN112670386A (en) * | 2020-12-31 | 2021-04-16 | 深圳第三代半导体研究院 | Light emitting diode and manufacturing method thereof |
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| TW201228019A (en) | 2012-07-01 |
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