CN102544077B - Method and structure for improving secondary breakdown resistance of transistor chip - Google Patents
Method and structure for improving secondary breakdown resistance of transistor chip Download PDFInfo
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- CN102544077B CN102544077B CN201110413141.2A CN201110413141A CN102544077B CN 102544077 B CN102544077 B CN 102544077B CN 201110413141 A CN201110413141 A CN 201110413141A CN 102544077 B CN102544077 B CN 102544077B
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Abstract
The invention discloses a method for improving secondary breakdown resistance of a transistor chip. A circle of annular isolation groove (2) is corroded on a P-N junction between a base electrode (b) and a transmitting electrode (e) of the traditional chip (1), so that the depth of the annular isolation groove (2) is greater than 3 mum and smaller than the depth of the P-N junction. The annular isolation groove (2) is filled with an insulating material layer (3), so that when a triode of the chip works, the working current only flows across the chip (1), the edge crowding effect of the transmitting electrode current is prevented in the chip (1), and the secondary breakdown resistance of the transistor chip is increased. The transistor chip not only has the advantages of simple structure, easiness in manufacturing and high secondary breakdown resistance, but also has the advantages of stable working performance, long service life and the like.
Description
Technical field
The present invention relates to a kind of method and structure that improves secondary breakdown resistance of transistor chip, belong to transistor manufacture technology field.
Background technology
At present, in the prior art, the chip of semiconductor power triode conventionally adopts emitter region diffused layer resistance or on each emitter unit, adds film resistor to improve transistorized anti-second breakdown ability as the method for ballast resistance.This traditional chip structure has unavoidable drawback, this drawback be exactly because product in when work, its temperature can raise, and can make the resistance of diffusion resistance or sheet resistance diminish, thereby its current stabilization effect is weakened greatly after temperature raises.Therefore, the method for existing this raising secondary breakdown resistance of transistor chip or not ideal enough, still can not meet user's instructions for use completely.
Summary of the invention
The object of the invention is to: provide a kind of simple in structure, make that easy, anti-second breakdown tolerance is high, method and the structure of the raising secondary breakdown resistance of transistor chip of stable work in work, to overcome the deficiencies in the prior art.
Technical scheme of the present invention is achieved in that a kind of method that improves secondary breakdown resistance of transistor chip of the present invention is, adopt the chip of existing transistor, P-N between base stage and the emitter of this chip ties and erodes away a ring shape isolation channel, make the degree of depth of this annular isolation groove be greater than 3 μ m and be less than the degree of depth that this P-N ties, then in this annular isolation groove, fill full insulation material layer, can make like this triode of this chip in the time of work, its operating current only flows through from the inside of chip, prevent from producing emitter current collection side effect in chip, thereby improve the anti-second breakdown tolerance of transistor chip.
The material of above-mentioned insulation material layer is silicon dioxide (SiO2).
A kind of structure that improves secondary breakdown resistance of transistor chip building according to said method, comprise the chip of the transistor that is provided with base stage, collector and emitter, P-N between base stage and the emitter of chip ties and is provided with a ring shape isolation channel, the degree of depth of annular isolation groove is greater than 3 μ m and is less than the degree of depth of this P-N knot, and in annular isolation groove, is filled with the insulation material layer that adopts earth silicon material to make.
The degree of depth of above-mentioned annular isolation groove is 5 μ m～10 μ m.
The width of above-mentioned annular isolation groove is 2 μ m～20 μ m.
In said chip, between the external cylindrical surface of chip and annular isolation groove, be also provided with a circle glassivation separator.
Owing to having adopted technique scheme, the present invention can improve the anti-second breakdown tolerance of transistor chip effectively.The present invention be inventor through after studying the genesis mechanism of transistorized second breakdown, and a kind of new chip structure that improves the anti-second breakdown tolerance of transistor of designing.Study for a long period of time to analyze according to inventor and find, various types of transistor arrangement defects, in blemish and body, defect is the major reason that produces second breakdown, because above-mentioned any defect finally shows as the inhomogeneities that is parallel to P-N knot surface voltage gradient, cause the symmetric destruction of transistor arrangement built-in potential and Electric Field Distribution, near this defect, to there is electric current concentration phenomenon, and the concentrated mark of this electric current, anxious steep increase of regional area current amplification factor centered by electric current is concentrated place, and the increase of this current amplification factor, aggravate again electric current concentration phenomenon, finally cause some melt zone because regional area is overheated, and there is second breakdown, therefore, how to reduce transistorized electric current concentration effect, particularly reduce the collection side effect of emitter current, just become the key point that improves the anti-second breakdown tolerance of transistor.Adopt the present invention can effectively prevent from producing the phenomenon of emitter current collection side effect in chip, thereby can improve significantly the anti-second breakdown tolerance of transistor chip.Adopt the present invention make model be 3DD3773 chip, its finished product after tested, at V
cEunder=100V t=1s, carry out second breakdown tolerance test I
c=I
s/B>=1.5A, has exceeded the requirement of existing like product second breakdown tolerance completely.So compared with prior art, that the present invention not only has advantages of is simple in structure, it is high to make easy, anti-second breakdown tolerance, and the present invention also has the advantage such as stable work in work, long service life in the present invention.
Brief description of the drawings
Fig. 1 is for adopting structural representation of the present invention.
Description of reference numerals: 1-chip, 2-annular isolation groove, 3-insulation material layer, 4-glassivation separator, b-base stage, c-collector electrode, e-emitter, the degree of depth of H-annular isolation groove, the width of B-annular isolation groove.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail.
Embodiments of the invention: a kind of method that improves secondary breakdown resistance of transistor chip of the present invention is to implement on the processing technology basis of existing transistor chip, adopting existing technique to be made into after the chip 1 of transistor, P-N between base stage b and the emitter e of this chip 1 ties and erodes away a ring shape isolation channel 2, make the degree of depth of this annular isolation groove 2 be greater than 3 μ m and be less than the degree of depth that this P-N ties, then in this annular isolation groove 2, fill full insulation material layer 3, the material of this insulation material layer 3 can adopt existing silicon dioxide (SiO2) material, can make by this method to adopt the triode of this chip in the time of work, its operating current only flows through from the inside of chip 1, prevents from producing emitter current collection side effect in chip 1, thereby improves the anti-second breakdown tolerance of transistor chip.
The of the present invention a kind of structure that improves secondary breakdown resistance of transistor chip building according to said method, comprise the chip 1 of the existing transistor that is provided with base stage b, collector electrode c and emitter e, when making, P-N between base stage b and the emitter e of chip 1 ties and produces a ring shape isolation channel 2, make the degree of depth of annular isolation groove 2 be greater than 3 μ m and be less than the degree of depth that this P-N ties, but the optimum depth H of annular isolation groove 2 is preferably controlled at the scope of 5 μ m～10 μ m, and the width B of annular isolation groove 2 is controlled to the scope of 2 μ m～20 μ m; Then the insulation material layer 3 that adopts earth silicon material to make on filling in annular isolation groove 2; Finally by traditional technique on chip 1, produce a circle glassivation separator 4 between the external cylindrical surface of chip 1 and annular isolation groove 2.The degree of depth of this glassivation separator 4 and money degree can be determined by the glassivation manufacture craft requirement of existing semiconductor triode.
Claims (6)
1. one kind is improved the method for secondary breakdown resistance of transistor chip, it is characterized in that: the chip (1) that adopts existing transistor, P-N between base stage (b) and the emitter (e) of this chip (1) ties and erodes away a ring shape isolation channel (2), make the degree of depth of this annular isolation groove (2) be greater than 3 μ m and be less than the degree of depth that this P-N ties, then in this annular isolation groove (2), fill full insulation material layer (3), can make like this triode of this chip in the time of work, its operating current only flows through from the inside of chip (1), prevent from producing emitter current collection side effect in chip (1), thereby improve the anti-second breakdown tolerance of transistor chip.
2. the method for raising secondary breakdown resistance of transistor chip according to claim 1, is characterized in that: the material of described insulation material layer (3) is silicon dioxide (SiO2).
3. one kind is improved the structure of secondary breakdown resistance of transistor chip, comprise the chip (1) of the transistor that is provided with base stage (b), collector electrode (c) and emitter (e), it is characterized in that: the P-N between base stage (b) and the emitter (e) of chip (1) ties and is provided with a ring shape isolation channel (2), the degree of depth of annular isolation groove (2) is greater than 3 μ m and is less than the degree of depth of this P-N knot, and in annular isolation groove (2), is filled with the insulation material layer (3) that adopts earth silicon material to make.
4. the structure of raising secondary breakdown resistance of transistor chip according to claim 3, is characterized in that: the degree of depth (H) of annular isolation groove (2) is 5 μ m～10 μ m.
5. according to the structure of the raising secondary breakdown resistance of transistor chip described in claim 3 or 4, it is characterized in that: the width (B) of annular isolation groove (2) is 2 μ m～20 μ m.
6. the structure of raising secondary breakdown resistance of transistor chip according to claim 3, is characterized in that: between the external cylindrical surface of, chip (1) upper at chip (1) and annular isolation groove (2), be also provided with a circle glassivation separator (4).
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| CN201110413141.2A CN102544077B (en) | 2011-12-10 | 2011-12-10 | Method and structure for improving secondary breakdown resistance of transistor chip |
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| CN201110413141.2A CN102544077B (en) | 2011-12-10 | 2011-12-10 | Method and structure for improving secondary breakdown resistance of transistor chip |
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| CN102544077B true CN102544077B (en) | 2014-06-18 |
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| CN102856368A (en) * | 2012-09-27 | 2013-01-02 | 电子科技大学 | Power bipolar transistor and manufacture method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201243018Y (en) * | 2008-08-08 | 2009-05-20 | 无锡固电半导体股份有限公司 | PNP type high-frequency high-speed low-voltage-drop high-gain power transistor for automobile electron |
| CN101916760A (en) * | 2010-05-28 | 2010-12-15 | 上海宏力半导体制造有限公司 | Silicon-controlled electrostatic discharge (ESD) protection structure for effectively avoiding latch-up effect |
| CN202339921U (en) * | 2011-12-10 | 2012-07-18 | 中国振华集团永光电子有限公司 | Structure for improving secondary breakdown resistance tolerance of transistor chip |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201243018Y (en) * | 2008-08-08 | 2009-05-20 | 无锡固电半导体股份有限公司 | PNP type high-frequency high-speed low-voltage-drop high-gain power transistor for automobile electron |
| CN101916760A (en) * | 2010-05-28 | 2010-12-15 | 上海宏力半导体制造有限公司 | Silicon-controlled electrostatic discharge (ESD) protection structure for effectively avoiding latch-up effect |
| CN202339921U (en) * | 2011-12-10 | 2012-07-18 | 中国振华集团永光电子有限公司 | Structure for improving secondary breakdown resistance tolerance of transistor chip |
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