CN102531572A - Temperature compensation high-frequency microwave capacitor medium material - Google Patents

Temperature compensation high-frequency microwave capacitor medium material Download PDF

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Publication number
CN102531572A
CN102531572A CN2010105844573A CN201010584457A CN102531572A CN 102531572 A CN102531572 A CN 102531572A CN 2010105844573 A CN2010105844573 A CN 2010105844573A CN 201010584457 A CN201010584457 A CN 201010584457A CN 102531572 A CN102531572 A CN 102531572A
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China
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titanate
temperature
sintering
temperature compensation
percent
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CN2010105844573A
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Chinese (zh)
Inventor
王强
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Individual
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Individual
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Abstract

The invention provides moisture-proof treatment of a finished product in the production process of a high-pressure ceramic capacitor. The treatment is characterized in that: barium titanate, bismuth titanate and calcium titanate are taken as raw materials. A temperature compensation high-frequency microwave capacitor medium material is prepared by mixing the materials, adding into polyvinyl alcohol for sintering and molding, and sintering at the temperature of about 1,360 DEG C. In the capacitor material sintered according to a ceramic formula, the compressive strength value is 25 kv/mm, the dielectric constant epsilon is equal to 50, and the quality factor Q is equal to 5*10<-4> under the alternating working current of 1 MHz. During practical preparation, a preparation method comprises the following steps of: weighing barium carbonate (BaCO3), bismuth oxide (Bi2O3), calcium carbonate and titanium dioxide (TiO2) according to a certain mixture ratio, performing ball milling, mixing, and drying to obtain barium titanate (BaTiO3), bismuth titanate (Bi2O3.3TiO2) and calcium titanate CaTiO3 at the temperature of 1,200-1,400 DEG C; and burdening a modifier from La2O3, Nd2O3, Sm2O3, Bi2O3, TiO2, Nb2O5 and Ta2O5 serving as raw materials, adding 0.2-0.6 percent of zinc oxide (ZnO) and 0.5-2 percent of zirconia (ZrO2), performing ball milling and mixing for 24 hours, drying, adding 8 percent by weight of polyvinyl alcohol for granulating, and sintering at the temperature of 1,360 DEG C.

Description

A kind of temperature compensation high frequency microwave capacitor dielectric material
Technical field
The present invention relates to a kind of microwave electron stupalith, especially a kind of temperature compensation high frequency microwave capacitor dielectric material.
Background technology
The microwave ceramics agglomerating method of widespread production use at present can not satisfy electronic circuit and miniaturization of devices demand thereof; Dielectric loss is big, is unfavorable for the job stability and the energy utilization rate of device.
Summary of the invention
The invention provides a kind of temperature compensation high frequency microwave capacitor dielectric material.
Technical scheme is following:
With barium titanate, bismuth titanates and calcium titanate is raw material.The above-mentioned materials compositing range is mixed the back add the Z 150PH sinter molding, obtain temperature compensation high frequency microwave capacitor dielectric material at 1360 ℃ of left and right sides sintering then.
Adopt this porcelain prescription agglomerating capacitor material, its compressive strength value 25kv/mm, DIELECTRIC CONSTANTS r=50, under the working alternating current of 1MHz, quality factor Q=5 * 10 -4
Embodiment
During actual fabrication, respectively with barium carbonate BaCO 3, bismuth oxide Bi 2O 3, lime carbonate and titanium oxide TiO 2According to certain proportioning weighing, carry out ball mill mixing, after oven dry, under 1200 to 1400 degrees centigrade, make barium titanate BaTiO 3, bismuth titanates Bi 2O 33TiO 2And calcium titanate CaTiO 3
Properties-correcting agent is with La 2O 3, Nd 2O 3, Sm 2O 3, Bi 2O 3, TiO 2, Nb 2O 5, Ta 2O 5Prepare burden in the scope for the raw material composition, add 0.2-0.6% zinc oxide ZnO, 0.5-2% zirconium white ZrO 2Ball mill mixing 24 hours, after oven dry, the Z 150PH that adds 8wt% carries out granulation, 1360 degrees centigrade of following sintering get final product the temperature compensation high frequency microwave capacitor dielectric material of this porcelain prescription.

Claims (1)

1. a temperature compensation high frequency microwave capacitor dielectric material is characterized in that with barium titanate, bismuth titanates and calcium titanate be raw material.The above-mentioned materials compositing range is mixed the back add the Z 150PH sinter molding, obtain temperature compensation high frequency microwave capacitor dielectric material at 1360 ℃ of left and right sides sintering then.
CN2010105844573A 2010-12-13 2010-12-13 Temperature compensation high-frequency microwave capacitor medium material Pending CN102531572A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010105844573A CN102531572A (en) 2010-12-13 2010-12-13 Temperature compensation high-frequency microwave capacitor medium material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010105844573A CN102531572A (en) 2010-12-13 2010-12-13 Temperature compensation high-frequency microwave capacitor medium material

Publications (1)

Publication Number Publication Date
CN102531572A true CN102531572A (en) 2012-07-04

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Family Applications (1)

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CN2010105844573A Pending CN102531572A (en) 2010-12-13 2010-12-13 Temperature compensation high-frequency microwave capacitor medium material

Country Status (1)

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CN (1) CN102531572A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103408302A (en) * 2013-07-19 2013-11-27 江苏大学 High permittivity and high temperature stability ceramic capacitor medium and its preparation method
CN103496971A (en) * 2013-10-01 2014-01-08 桂林理工大学 Low temperature sintered microwave dielectric ceramic Ca4Bi6O13 and preparation method thereof
CN103496972A (en) * 2013-10-01 2014-01-08 桂林理工大学 Ultralow sintering temperature stable type microwave dielectric ceramic Ca5Bi14O26 and preparation method thereof
CN107991536A (en) * 2017-11-03 2018-05-04 国家电网公司 A kind of temperature correction method and equipment of the test of frequency domain dielectric response

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1373105A (en) * 2002-04-01 2002-10-09 华中科技大学 Process for preparing heat-generating PTC ceramics
CN1420102A (en) * 2001-11-20 2003-05-28 厦门大学 Quasi-nano BazTi9O20 microwave ceramic and making method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1420102A (en) * 2001-11-20 2003-05-28 厦门大学 Quasi-nano BazTi9O20 microwave ceramic and making method thereof
CN1373105A (en) * 2002-04-01 2002-10-09 华中科技大学 Process for preparing heat-generating PTC ceramics

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
张其土 等: "BaTiO3基无铅高压陶瓷电容器材料性能的研究", 《电子元件与材料》 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103408302A (en) * 2013-07-19 2013-11-27 江苏大学 High permittivity and high temperature stability ceramic capacitor medium and its preparation method
CN103496971A (en) * 2013-10-01 2014-01-08 桂林理工大学 Low temperature sintered microwave dielectric ceramic Ca4Bi6O13 and preparation method thereof
CN103496972A (en) * 2013-10-01 2014-01-08 桂林理工大学 Ultralow sintering temperature stable type microwave dielectric ceramic Ca5Bi14O26 and preparation method thereof
CN107991536A (en) * 2017-11-03 2018-05-04 国家电网公司 A kind of temperature correction method and equipment of the test of frequency domain dielectric response
CN107991536B (en) * 2017-11-03 2023-06-13 国家电网公司 Temperature correction method and equipment for frequency domain dielectric response test

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Application publication date: 20120704