CN102531573A - Doped and modified temperature compensation high-frequency microwave capacitor dielectric material - Google Patents
Doped and modified temperature compensation high-frequency microwave capacitor dielectric material Download PDFInfo
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- CN102531573A CN102531573A CN2010105845152A CN201010584515A CN102531573A CN 102531573 A CN102531573 A CN 102531573A CN 2010105845152 A CN2010105845152 A CN 2010105845152A CN 201010584515 A CN201010584515 A CN 201010584515A CN 102531573 A CN102531573 A CN 102531573A
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- dielectric material
- capacitor dielectric
- temperature compensation
- frequency microwave
- compensation high
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Abstract
The invention provides a doped and modified temperature compensation high-frequency microwave capacitor dielectric material. The temperature compensation high-frequency microwave capacitor dielectric material is prepared according to a ceramic formula by the following steps of: weighing barium carbonate (BaCO3), bismuth oxide (Bi2O3), calcium carbonate and titanium dioxide (TiO2) according to a certain ratio, performing ball milling and mixing, drying, then preparing barium titanate (BaTiO3), bismuth titanate (Bi2O3. 3TiO2) and calcium titanate (CaTiO3) at the temperature of 1200-1400 DEG C, preparing raw materials of a modifier, where the raw materials of a modifier comprise La2O3, Nd2O3, Sm2O3, Bi2O3, TiO2, Nb2O5 and Ta2O5; doping and adding 3%-5% of TiO2, 0.2-1% of zinc oxide (ZnO) and 0.2-1% of cerium oxide (CeO2), performing ball milling and mixing for 24 hours, drying, then adding 8wt% of polyvinyl alcohol for granulation, and sintering at the temperature of 1360 DEG C.
Description
Technical field
The present invention relates to a kind of capacitor dielectric material, the temperature compensation high frequency microwave capacitor dielectric material that especially a kind of doping vario-property is crossed.
Background technology
The specific inductivity of the high-pressure porcelain capacitor material of widespread production use at present is less, can not satisfy electronic circuit and miniaturization of devices demand thereof; Dielectric loss is big, is unfavorable for the job stability and the energy utilization rate of device.
And the stability of the lead-free ceramic capacitance modulator material of general prescription is poor simultaneously.
Summary of the invention
To the problems referred to above, the temperature compensation high frequency microwave capacitor dielectric material that the present invention provides a kind of doping vario-property to cross.
Technical scheme is following:
It is characterized in that with barium titanate, bismuth titanates and calcium titanate be raw material.The above-mentioned materials compositing range is mixed the back add the Z 150PH sinter molding, obtain temperature compensation high frequency microwave capacitor dielectric material at 1360 ℃ of left and right sides sintering then.
Adopt this porcelain prescription agglomerating capacitor material, its compressive strength value 22kv/mm, DIELECTRIC CONSTANTS
r=100, under the working alternating current of 1MHz, quality factor Q=2 * 10
-4
Embodiment
During actual fabrication, respectively with barium carbonate BaCO
3, bismuth oxide Bi
2O
3, lime carbonate and titanium oxide TiO
2According to certain proportioning weighing, carry out ball mill mixing, after oven dry, under 1200 to 1400 degrees centigrade, make barium titanate BaTiO
3, bismuth titanates Bi
2O
33TiO
2And calcium titanate CaTiO
3
Properties-correcting agent is with La
2O
3, Nd
2O
3, Sm
2O
3, Bi
2O
3, TiO
2, Nb
2O
5, Ta
2O
5Prepare burden in the scope for the raw material composition, carry out alloying addition 3%-5%TiO
2, 0.2-1% zinc oxide ZnO, 0.2-1% cerium oxide CeO
2Ball mill mixing 24 hours, after oven dry, the Z 150PH that adds 8wt% carries out granulation, 1360 degrees centigrade of following sintering get final product the temperature compensation high frequency microwave capacitor dielectric material of this porcelain prescription.
Claims (1)
1. the temperature compensation high frequency microwave capacitor dielectric material that doping vario-property is crossed is characterized in that with barium titanate, bismuth titanates and calcium titanate be raw material.The above-mentioned materials compositing range is mixed the back add the Z 150PH sinter molding, obtain temperature compensation high frequency microwave capacitor dielectric material at 1360 ℃ of left and right sides sintering then.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105845152A CN102531573A (en) | 2010-12-13 | 2010-12-13 | Doped and modified temperature compensation high-frequency microwave capacitor dielectric material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105845152A CN102531573A (en) | 2010-12-13 | 2010-12-13 | Doped and modified temperature compensation high-frequency microwave capacitor dielectric material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102531573A true CN102531573A (en) | 2012-07-04 |
Family
ID=46339770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105845152A Pending CN102531573A (en) | 2010-12-13 | 2010-12-13 | Doped and modified temperature compensation high-frequency microwave capacitor dielectric material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102531573A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104030685A (en) * | 2014-04-30 | 2014-09-10 | 武汉虹信通信技术有限责任公司 | High-Q-value microwave dielectric ceramic and preparation method thereof |
| CN113502414A (en) * | 2021-06-10 | 2021-10-15 | 暨南大学 | High-thermal-conductivity aviation aluminum alloy and application thereof in preparation of ultra-large-area LED light source radiator |
| CN113502413A (en) * | 2021-06-10 | 2021-10-15 | 暨南大学 | Aluminum alloy material for LED light source radiator and preparation method thereof |
| CN117326868A (en) * | 2023-12-02 | 2024-01-02 | 山东利恩斯智能科技有限公司 | Ceramic material, preparation method thereof and application thereof in piezoelectricity |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1373105A (en) * | 2002-04-01 | 2002-10-09 | 华中科技大学 | Process for preparing heat-generating PTC ceramics |
| CN1420102A (en) * | 2001-11-20 | 2003-05-28 | 厦门大学 | Quasi-nano BazTi9O20 microwave ceramic and making method thereof |
-
2010
- 2010-12-13 CN CN2010105845152A patent/CN102531573A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1420102A (en) * | 2001-11-20 | 2003-05-28 | 厦门大学 | Quasi-nano BazTi9O20 microwave ceramic and making method thereof |
| CN1373105A (en) * | 2002-04-01 | 2002-10-09 | 华中科技大学 | Process for preparing heat-generating PTC ceramics |
Non-Patent Citations (1)
| Title |
|---|
| 张其土 等: "BaTiO3基无铅高压陶瓷电容器材料性能的研究", 《电子元件与材料》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104030685A (en) * | 2014-04-30 | 2014-09-10 | 武汉虹信通信技术有限责任公司 | High-Q-value microwave dielectric ceramic and preparation method thereof |
| CN113502414A (en) * | 2021-06-10 | 2021-10-15 | 暨南大学 | High-thermal-conductivity aviation aluminum alloy and application thereof in preparation of ultra-large-area LED light source radiator |
| CN113502413A (en) * | 2021-06-10 | 2021-10-15 | 暨南大学 | Aluminum alloy material for LED light source radiator and preparation method thereof |
| CN113502413B (en) * | 2021-06-10 | 2021-12-31 | 暨南大学 | Aluminum alloy material for LED light source radiator and preparation method thereof |
| CN113502414B (en) * | 2021-06-10 | 2022-01-07 | 暨南大学 | High-thermal-conductivity aviation aluminum alloy and application thereof in preparation of ultra-large-area LED light source radiator |
| CN117326868A (en) * | 2023-12-02 | 2024-01-02 | 山东利恩斯智能科技有限公司 | Ceramic material, preparation method thereof and application thereof in piezoelectricity |
| CN117326868B (en) * | 2023-12-02 | 2024-02-13 | 山东利恩斯智能科技有限公司 | Ceramic material, preparation method thereof and application thereof in piezoelectricity |
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| PB01 | Publication | ||
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120704 |