CN103496971A - Low temperature sintered microwave dielectric ceramic Ca4Bi6O13 and preparation method thereof - Google Patents

Low temperature sintered microwave dielectric ceramic Ca4Bi6O13 and preparation method thereof Download PDF

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CN103496971A
CN103496971A CN201310458337.2A CN201310458337A CN103496971A CN 103496971 A CN103496971 A CN 103496971A CN 201310458337 A CN201310458337 A CN 201310458337A CN 103496971 A CN103496971 A CN 103496971A
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low temperature
ca4bi6o13
dielectric ceramic
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CN103496971B (en
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方亮
蒋雪雯
郭欢欢
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Suzhou Hongwu Technology Intermediary Service Co.,Ltd.
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Guilin University of Technology
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Abstract

The invention discloses a low temperature sintered microwave dielectric ceramic Ca4Bi6O13 and a preparation method thereof. The chemical formula of the low temperature sintered microwave dielectric ceramic is Ca4Bi6O13. The preparation method comprises the following steps: (1) weighing and mixing original powder, with purity above 99.9%, of CaCO3 and Bi2O3 according to the chemical formula Ca4Bi6O13; (2) carrying out wet ball milling on the raw material mixture obtained in the step (1) for 12 hours and presintering the powder in an atmosphere at 700 DEG C for 6 hours after drying the powder, wherein the solvent is distilled water; (3) adding a binder to the powder prepared in the step (2) and then granulating the mixture, then carrying out compression forming and finally sintering the product in an atmosphere at 750-780 DEG C for 4 hours, wherein a polyvinyl alcohol solution with mass concentration of 5% is adopted as the binder and the dosage of the binder is 3% of the total mass of the powder. The prepared ceramic is well sintered at 750-780 DEG C, has dielectric constant of 15-16 and quality factor (Qf) as high as 84000-95000GHz, has low temperature coefficient of resonance frequency and has great application value in industry.

Description

Low temperature sintering microwave dielectric ceramic Ca 4bi 6o 13and preparation method thereof
Technical field
The present invention relates to dielectric ceramic material, particularly relate to microwave dielectric ceramic material of the microwave devices such as medium substrate, resonator and wave filter that use in microwave frequency and preparation method thereof.
Background technology
Microwave dielectric ceramic refers to and is applied in microwave frequency band (being mainly UHF, SHF frequency range) circuit as dielectric material and completes the pottery of one or more functions, be widely used as the components and parts such as resonator, wave filter, dielectric substrate and medium guided wave loop in modern communication, it is the key foundation material of modern communication technology, at aspects such as portable mobile phone, automobile telephone, cordless telephone, telestar susceptor and military radars, very important application is arranged, in the miniaturization of modern communication instrument, integrated process, just bringing into play increasing effect.
Be applied to the dielectric ceramic of microwave frequency band, should meet the requirement of following dielectric characteristics: (1) seriation DIELECTRIC CONSTANT ε rto adapt to the requirement of different frequency and different application occasion; (2) high quality factor q value or dielectric loss tan δ are to reduce noise, and one requires Qf>=3000GHz; (3) the temperature factor τ of resonant frequency fthe as far as possible little thermostability to guarantee that device has had, one requirement-10/ ℃≤τ f≤+10ppm/ ℃.From late 1930s, just someone attempts dielectric substance is applied to microwave technology in the world.
According to relative permittivity ε rsize from use the different of frequency range, usually the microwave dielectric ceramic be developed He developing can be divided into to 4 classes.
(1) ultralow dielectric microwave dielectric ceramic, main representative is Al 2o 3-TiO 2, Y 2baCuO 5, MgAl 2o 4and Mg 2siO 4deng, its ε r≤ 20, quality factor q * f>=50000GHz, τ f≤ 10ppm/ ℃.Be mainly used in microwave base plate and high-end microwave device.
(2) low ε rwith the microwave dielectric ceramic of high Q value, be mainly BaO-MgO-Ta 2o 5, BaO-ZnO-Ta 2o 5or BaO-MgO-Nb 2o 5, BaO-ZnO-Nb 2o 5system or the composite system MWDC material between them.Its ε r=25~30, Q=(1~2) * 10 4(under f>=10GHz), τ f≈ 0.Be mainly used in the microwave communication equipments such as direct broadcasting satellite of f >=8GHz as the dielectric resonance device.
(3) medium ε rwith the microwave dielectric ceramic of Q value, be mainly with BaTi 4o 9, Ba 2ti 9o 20(Zr, Sn) TiO 4deng the MWDC material that is base, its ε r=35~40, Q=(6~9) * 10 3(f=3~-4GHz under), τ f≤ 5ppm/ ℃.Be mainly used in the interior microwave military radar of 4~8GHz range of frequency and communication system as the dielectric resonance device.
(4) high ε rand the lower microwave dielectric ceramic of Q value is mainly used in civilian mobile communcations system in 0.8~4GHz range of frequency, this is also the emphasis of microwave dielectric ceramic research.Since the eighties, the people such as Kolar, Kato find and have studied perovskite-like tungsten bronze type BaO-Ln in succession 2o 3-TiO 2series (Ln=La, Sm, Nd or Pr etc. are called for short BLT system), complex perovskite structure CaO-Li 2o-Ln 2o 3-TiO 2series, lead base series material, Ca 1-xln 2x/3tiO 3be contour ε rmicrowave dielectric ceramic, the wherein BaO-Nd of BLT system 2o 3-TiO 2material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO 3specific inductivity reaches 105.
The sintering temperature of above these material systems one higher than 1300 ℃, can not be directly and the low melting point metals such as Ag and Cu burn altogether the formation laminated ceramic capacitor.In recent years, along with LTCC Technology (Low Temperature Co-fired Ceramics, the requirement of development LTCC) and the development of microwave multilayer device, researchist both domestic and external has carried out exploring widely and studying to some low fever's system materials, mainly to adopt devitrified glass or glass-ceramic composite system, because low melting glass has relatively high dielectric loss mutually, the existence of glassy phase has improved the dielectric loss of material greatly.Therefore development is the emphasis of current research without the low temperature sintering microwave dielectric ceramic of glassy phase, low temperature sintering high performance microwave media ceramic system is still very limited at present, and this has limited the development of low temperature co-fired technology and microwave multilayer device to a great extent.
Summary of the invention
The purpose of this invention is to provide a kind of have low-loss and good thermostability, microwave dielectric ceramic that sintering temperature is low simultaneously and preparation method thereof.
The chemical constitution of the low temperature sintering microwave dielectric ceramic the present invention relates to is: Ca 4bi 6o 13.
Preparation method's concrete steps of described low temperature sintering microwave dielectric ceramic are:
(1) by purity, be the CaCO more than 99.9% 3and Bi 2o 3starting powder press Ca 4bi 6o 13the chemical formula weigh batching.
(2) by step (1) raw material mixing wet ball-milling 12 hours, solvent was distilled water, pre-burning 6 hours in 700 ℃ of air atmosphere after oven dry.
(3) after adding binding agent granulation in the powder made in step (2), then compression moulding, last sintering 4 hours in 750~780 ℃ of air atmosphere; Described binding agent adopts the polyvinyl alcohol solution that mass concentration is 5%, and dosage accounts for 3% of powder total mass.
Pottery prepared by the present invention is good at 750-780 ℃ of sintering, and its specific inductivity reaches 15~16, and quality factor q f value is up to 84000-95000GHz, and temperature coefficient of resonance frequency is little, industrial great using value is arranged.
Embodiment
Embodiment:
Table 1 shows 4 specific embodiments and the microwave dielectric property thereof that forms different sintering temperatures of the present invention.Its preparation method as mentioned above, carries out the evaluation of microwave dielectric property by the cylindrical dielectric resonator method.
The present invention never is limited to above embodiment.The bound of sintering temperature, interval value can realize the present invention, at this, do not enumerate embodiment.
This pottery can be widely used in the manufacture of the microwave devices such as various medium substrates, resonator and wave filter, can meet the Technology Need of the systems such as mobile communication, satellite communications.
Table 1:
Figure BDA0000391813220000031

Claims (1)

1. but composite oxides, as the application of low-temperature sintered microwave dielectric ceramic, is characterized in that the chemical constitution formula of described composite oxides is: Ca 4bi 6o 13;
Preparation method's concrete steps of described composite oxides are:
(1) by purity, be the CaCO more than 99.9% 3and Bi 2o 3starting powder press Ca 4bi 6o 13formula weigh batching;
(2) by step (1) raw material mixing wet ball-milling 12 hours, solvent was distilled water, pre-burning 6 hours in 700 ℃ of air atmosphere after oven dry;
(3) after adding binding agent granulation in the powder made in step (2), then compression moulding, last sintering 4 hours in 750 ~ 780 ℃ of air atmosphere; Described binding agent adopts the polyvinyl alcohol solution that mass concentration is 5%, and dosage accounts for 3% of powder total mass.
CN201310458337.2A 2013-10-01 2013-10-01 Low temperature sintered microwave dielectric ceramic Ca4Bi6O13 and preparation method thereof Active CN103496971B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1609050A (en) * 2003-10-23 2005-04-27 浙江大学 Low temperature sintered microwave dielectric ceramic with medium dielectric constant and its prepn process
JP2011162438A (en) * 2011-03-29 2011-08-25 Toyota Central R&D Labs Inc Anisotropically shaped powder and manufacturing method thereof, and crystal-oriented ceramic and manufacturing method thereof
CN102260080A (en) * 2010-05-31 2011-11-30 中国科学院上海硅酸盐研究所 Modified CaBi2Nb209 bismuth layered piezoceramic material and preparation method thereof
CN102531572A (en) * 2010-12-13 2012-07-04 王强 Temperature compensation high-frequency microwave capacitor medium material

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1609050A (en) * 2003-10-23 2005-04-27 浙江大学 Low temperature sintered microwave dielectric ceramic with medium dielectric constant and its prepn process
CN102260080A (en) * 2010-05-31 2011-11-30 中国科学院上海硅酸盐研究所 Modified CaBi2Nb209 bismuth layered piezoceramic material and preparation method thereof
CN102531572A (en) * 2010-12-13 2012-07-04 王强 Temperature compensation high-frequency microwave capacitor medium material
JP2011162438A (en) * 2011-03-29 2011-08-25 Toyota Central R&D Labs Inc Anisotropically shaped powder and manufacturing method thereof, and crystal-oriented ceramic and manufacturing method thereof

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
ANN-KRISTIN LARSSON ET AL.: "An Electron Diffraction Study of Short-Range Order in the (1-x)Bi2O3•xCaO γ-Type Solid Solution and Its Relationship to Low-Temperature Ca4Bi6O13", 《JOURNAL OF SOLID STATE CHEMISTRY》 *
ANN-KRISTIN LARSSON ET AL.: "An Electron Diffraction Study of Short-Range Order in the (1-x)Bi2O3•xCaO γ-Type Solid Solution and Its Relationship to Low-Temperature Ca4Bi6O13", 《JOURNAL OF SOLID STATE CHEMISTRY》, vol. 135, no. 2, 1 February 1998 (1998-02-01) *
HIROYUKI NAKAMURA ET AL.: "First-principles study on electronic structure and optical properties of Ca4Bi6O13 crystal", 《JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS》 *
陈凯等: "Bi基微波介质材料研究进展", 《硅酸盐学报》 *

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