CN102522383A - IC chip stacked packaging piece with two-ring-arrangement center routing and production method thereof - Google Patents
IC chip stacked packaging piece with two-ring-arrangement center routing and production method thereof Download PDFInfo
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- CN102522383A CN102522383A CN2011104550524A CN201110455052A CN102522383A CN 102522383 A CN102522383 A CN 102522383A CN 2011104550524 A CN2011104550524 A CN 2011104550524A CN 201110455052 A CN201110455052 A CN 201110455052A CN 102522383 A CN102522383 A CN 102522383A
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- chip
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- center wiring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The invention provides an IC chip stacked packaging piece with a two-ring-arrangement center routing and a preparation method thereof. The packaging piece adopts the structure that two layers of IC chips are stuck to and stacked on a lead wire framework carrier; a center routing ring is arranged on the outside of the first IC chip, and two rings of inner pins are arranged outside the center routing ring, and inner ring and outer ring bonding pads are arranged on the center routing ring; the inner ring bonding pad is respectively in routing with the bonding pads of the first IC chip and a second IC chip; and the outer ring bonding pad is respectively in routing with the pins of a first inner pin and a second inner pin. According to the invention, the center routing ring and two-ring-arrangement convex points are combined skillfully, the center routing ring is connected with or embedded in the lead wire framework carrier through a high strength glue, so the combination of the plastic encapsulated material and the framework is increased, the thickness of the framework is reduced, the layering is avoided, and the reliability of the product is improved; and two rings of bonding pads on the center routing ring are connected through a PCB circuit design to serve as the IC chips which are connected between inner pins through the conversion of the internal circuit of the center routing, thereby reducing the length of the welding wire, and lowering the welding wire cost, particularly, the use cost of the gold wire.
Description
Technical field
The present invention relates to electronic information Element of automatic control manufacturing technology field, relate in particular to the two circles of a kind of center wiring and arrange the chip-stacked packaging part of IC, the present invention also comprises the production method of this packaging part.
Background technology
For a long time, receive etching template and etch process technology limitation, the individual pen lead frame pattern that the QFN product is continuing the nineties always and develops.QFN encapsulation is through in recent years development; Particularly since 2006, the market demand increases, and has promoted the fast development of QFN encapsulation technology; Material supporting technology, manufacturing process technology and package application technology have all had breakthrough progress, realize that two circle QFN products become possibility.The integrated circuit encapsulation technologies of the two circle of QFN (Quad Flat No Lead Package) type array packages are the development abroad a kind of novel small form height density encapsulation technologies of getting up in recent years, are one of state-of-the-art surface mount encapsulation technologies.Number of pins was few when at present, common four limit flat non-pin encapsulation (QFN) single faces encapsulated, bonding wire long, cause the bonding wire cost high.
Summary of the invention
Technical problem to be solved by this invention is on the technological basis of the flat no pin package of existing comparatively ripe QFN integrated circuit encapsulation technology and individual pen; Draw BGA and design and produce characteristics with the center wiring grommet; Provide a kind of two circles of center wiring center wiring grommet and the ingenious combination of two circle array bump to arrange the chip-stacked packaging part of IC, another object of the present invention provides a kind of preparation method of above-mentioned packaging part.
Adopt following technical scheme for solving the problems of the technologies described above:
Wiring two circles in a kind of center are arranged the chip-stacked packaging part of IC; Comprise pin, IC chip, bonding line and plastic-sealed body in lead frame carrier, the support lead; A bonding IC chip on the said lead frame carrier; Piling up on the said IC chip has the 2nd IC chip, and the said IC chip outside is provided with the center wiring grommet, and the outside of said center wiring grommet is provided with pin in two circles; Be respectively the pin and the second interior pin in first; In said two circles between the pin front etch go out 1/2 first pit that the degree of depth is a leadframe thickness, in first in the pin and second the pin bottom erode away 1/2 second pit that the degree of depth is a leadframe thickness, said center wiring grommet is provided with the inner ring pad and encloses pads with outer ring pad two; Said inner ring pad respectively with an IC chip and the 2nd IC bonding pads routing, said outer ring pad respectively with first in pin and second in the pin routing.
A said IC chip and the 2nd IC chip routing are connected to form the 5th bonding line, and the inner ring pad routing of a said IC chip and center wiring grommet is connected to form first bonding line and second bonding line; The inner ring pad routing of said the 2nd IC chip and center wiring grommet is connected to form the 6th bonding line and the 7th bonding line; Arcing forms triple bond zygonema and the 8th bonding line behind the pad routing of said outer ring on the pin in first, and arcing forms quadruple linkage zygonema and the 9th bonding line behind the routing on the pin in second.
Said center wiring grommet is inlayed or is sticked on the lead frame carrier, communicates through the center wiring grommet between said inner ring pad and the outer ring pad.
Preparation technology's flow process that the two circles of said a kind of center wiring are arranged the chip-stacked packaging part of IC is attenuate, scribing, upward pin, plating, product separation, visual inspection, packing are solidified, print, separated in core, pressure welding, plastic packaging, back; Wherein except that pressure welding, the electroplating work procedure; Other operation all adopts the conventional method of relevant packing forms, and said technical process is:
Adopt the conventional method of relevant packing forms to carry out;
Core on the step 2
A, twin-core sheet pile up once goes up core
When each edge lengths of an IC chip than each edge lengths of the 2nd IC chip during greater than 1.2mm, an IC chip of stacked package and the 2nd IC chip adopt once goes up core respectively, once toasts;
B, twin-core sheet pile up core on the secondary
When each edge lengths of an IC chip than each edge lengths of the 2nd IC chip during less than 1.2mm, an IC chip of stacked package and the 2nd IC chip adopt that core toasts respectively on the secondary;
Said step b twin-core sheet piles up core on the secondary; On using the insulating cement secondary during core; At the first second bonding die glue insulating cement on the point of an IC chip front side, again the absorption of the 2nd IC chip is bonded at above the second bonding die glue, glued second chip after; The semi-finished product lead frame that last core is good send baking, toasts down at 150 ℃ and bakes in 3 hours;
Said step b twin-core sheet piles up core on the secondary, on using the glue film secondary, during core, uses the equipment with core function on the glue film; Stick glue film at the back side of the 2nd IC chip before the scribing, fix the wafer of the 2nd IC chip earlier, 120 ℃～150 ℃ of substrate heating; The 2nd IC chip absorption with the band glue film; Be placed on an IC chip front side, glued the 2nd IC chip after, the lead frame semi-finished product of last core are 150 ℃ of down bakings 3 hours.
Core pressure welding material also is gold thread and copper cash on the stacked package secondary; Pad on the 2nd IC chip both carried out bonding wire with an IC chip, again and pressure welding between the interior pad group of center wiring grommet, and the outer pad group of center wiring grommet routing between pin both and in first; Routing between pin again and in the outer ring second; Select forehand, instead beat, multiple bank form, anti-principal vertical line and short-circuit between conductors;
The device that the conventional method that adopts relevant packing forms forms after to pressure welding carries out plastic packaging, the back is solidified, printed;
The a filing separates, and the semi-finished product base of frame of having printed is corroded earlier, and the lead frame back side erodes 0.045mm～0.065mm, carries out grinding then, and polishing thickness is 0.065mm～0.045mm;
The b laser method separates, and the semi-finished product base of frame of having printed is cut off with company's muscle of laser means with inside and outside pin, and the depth of cut of laser cuts 21 is 0.11mm+0.01mm;
A separates between pin filing and connects muscle, adopts chemical plating method to electroplate the copper of one deck 8 μ m～10 μ m earlier, electroplates the pure tin of 7 μ m～15 μ m then;
B separates between pin laser method and connects muscle, adopts the pure tin of chemical plating method Direct Electroplating 7 μ m～15 μ m.
The separation of step 7 product, visual inspection, packing
Adopt the conventional method of relevant packing forms that the device of electroplating back formation is carried out product separation, visual inspection, packing.
Center of the present invention wiring grommet joins through high strength glue and lead frame carrier or inlays, and carrier links to each other with framework with middle muscle respectively through 4 limit muscle; Pin links to each other with the pin of middle muscle and adjacent frame respectively through connecting muscle in the same column, links to each other with framework with the limit muscle through middle muscle; The pin and the second interior pin link to each other in the orthoscopic first; And all there is pit upper surface and bottom surface in first between the pin and the second interior pin; Upper surface pit (first pit) has reduced separation pin thickness, bottom surface pit (second pit) plastic packaging material embeds, and has strengthened combining of plastic packaging material and framework; Again attenuate frame thickness (frame thickness 1/2) make things convenient for pin to separate, prevent that layering from helping improving reliability of products.Have 2 circle pads to communicate on the wiring grommet of center through the PCB designed lines, and as the IC chip conversion through center wiring grommet internal wiring realize with interior pin between conducting, reduce wire length, saving bonding wire cost mainly is a gold thread.
Description of drawings
Fig. 1 is a framework partial view of the present invention;
Fig. 2 separates profile before the pin for the present invention;
Fig. 3 is generalized section behind the back etched attenuate of the present invention;
Fig. 4 separates profile behind the pin for grinding of the present invention;
Fig. 5 is profile behind the separation by laser pin of the present invention.
Among the figure: 1-lead frame carrier; 2-center wiring grommet; 3-the first bonding die glue (conducting resinl); 4-the one IC chip; 5-the first bonding line; 6-the second bonding line; 7-the triple bond zygonema; 8-the quadruple linkage zygonema; 9-the second bonding die glue (insulating cement); 10-the two IC chip; 11-the five bonding line; 12-the six bonding line; 13-the seven bonding line; 14-the eight bonding line; 15-the nine bonding line; 16-glue film; Pin in 17-the first; 18-the first pit; Pin in 19-the second; 20-plastic-sealed body; 21-laser cuts; 22-interior pad group; 23-outer pad group; 24-even muscle; 25-middle muscle; 26-high strength glue; 27-the second pit; 28-limit muscle.
Embodiment
Below in conjunction with accompanying drawing the present invention is done further and to be described in detail:
As shown in the figure, wiring two circles in a kind of center are arranged the chip-stacked packaging part of IC, comprise pin, pit, center wiring grommet 2 and inside and outside pad group, IC chip, bonding line and plastic-sealed body 20 in lead frame carrier 1, the support lead.The IC chip is divided into an IC chip 4 and the 2nd IC chip 10, and being bonded with to pile up on an IC chip 4, the one IC chips 4 through bonding die glue 3 on the lead frame carrier 1 has the 2nd IC chip 10.The center wiring grommet 2 of this lead frame joins through high strength glue 26 and lead frame carrier 1 or inlays, and lead frame carrier 1 links to each other with framework with middle muscle 25 respectively through 4 limit muscle 28; Pin links to each other with the pin of middle muscle and adjacent frame respectively through connecting muscle in the same column, links to each other with framework with the limit muscle through middle muscle.The one IC chip 4 outsides are provided with center wiring grommet 2; The outside of center wiring grommet 2 is provided with pin in two circles; In first in the pin 17 and second between the interior pin of pin 19, two circles front etch go out 1/2 first pit 18 that the degree of depth is a leadframe thickness, reduced separation pin thickness.Pin 17 and second interior pin 19 bottom surfaces erode away 1/2 second pit 27 that the degree of depth is a leadframe thickness in first; Second pit, 27 plastic packaging materials embed; Strengthened combining of plastic packaging material and framework; Again attenuate frame thickness (frame thickness 1/2) make things convenient for pin to separate, prevent that layering from helping improving reliability of products.Said center wiring grommet 2 is provided with 23 liang of circles of inner ring pad 22 and outer ring pad pad, inner ring pad 22 respectively with the pad routing of an IC chip 4 and the 2nd IC chip 10, outer ring pad 23 respectively with first in the pin 17 and second interior pin 19 routings.2 circle pads communicate through the PCB designed lines on the wiring grommet of center, and as the IC chip conversion through center wiring grommet 2 internal wirings realize with interior pin between conducting, reduce wire length, saving bonding wire cost mainly is a gold thread.Inner ring pad 22 routings that the one IC chip 4 and the 2nd IC chip 10 routings are connected to form the 5th bonding line 11, the one IC chips 4 and center wiring grommet 2 are connected to form first bonding line 5 and second bonding line 6; Said the 2nd IC chip 10 is connected to form the 6th bonding line 12 and the 7th bonding line 13 with inner ring pad 22 routings of center wiring grommet 2; Arcing forms triple bond zygonema 7 and the 8th bonding line 14 behind pad 23 routings of said outer ring on the pin 17 in first, and arcing forms quadruple linkage zygonema 8 and the 9th bonding line 15 behind outer ring pad 23 routings on the pin 19 in second.
Wafer thickness thinning 210 μ m, wherein the thickness of ground floor IC chip 4 is 180 μ m μ m, the thickness of second layer IC chip 10 is 150 μ m;
Core on the step 2
During greater than 1.2mm, an IC chip 4 of stacked package and the 2nd IC chip 10 adopt once goes up core respectively to each edge lengths of the one IC chip 4, once toasts than each edge lengths of the 2nd IC chip 10;
On lead frame carrier 1, paste an IC chip 4 earlier; After pasting an IC chip 4; The semi-finished product of accomplishing core on the IC chip 4 are transmitted the feeding platform that box sends back to chip feeder, change the second bonding die glue 9 (insulating cement) and the 2nd IC chip 10 wafers, earlier the second bonding die glue 9 (insulating cement) on an IC chip 4 central points; Equipment is drawn the 2nd IC chip 10 automatically and is placed on the second bonding die glue 10, accomplishes core on all the 2nd IC chips 10 with the method; The article of dressing up send baking, adopt anti-absciss layer baking technology baking 3 hours, 150 ℃ of baking temperatures;
The semi-finished product lead frame that will be stained with the center wiring grommet 2 of the 2nd IC chip 10 earlier transmits the feeding platform that box is placed on press welder; Then gold thread or copper cash axle are fixed on the pressure welding platform; Start the automatic charging device of press welder, the finished product lead frame transmits box and rises to desired location automatically, releases a semi-finished product lead frame to track and send into the pressure welding workbench and heat; 180 ℃ of temperature are carried out bonding wire by setting program.Core pressure welding material also is gold thread and copper cash on the stack package secondary; Pad on the 2nd IC chip 10 both carried out bonding wire with an IC chip 4, again and 22 pressure weldings of interior pad group of center wiring grommet 2, and the outer pad group 23 of center wiring grommet 2 17 routings of pin both and in first; Again and second in 19 routings of pin; Select forehand, instead beat, multiple bank form, anti-principal vertical line and short-circuit between conductors;
The device that the conventional method that adopts relevant packing forms forms after to pressure welding carries out plastic packaging, the back is solidified, printed.
Filing separates, and the semi-finished product base of frame of having printed is corroded earlier, and the lead frame back side erodes 0.065mm, carries out grinding then, polishing thickness is 0.045mm;
To connecting muscle between filing separation pin, adopt chemical plating method to electroplate the copper of one deck 8 μ m earlier, electroplate the pure tin of 7 μ m then;
Adopt the conventional method of relevant packing forms that the device of electroplating back formation is carried out product separation, visual inspection, packing, warehouse-in, process the two circles of four limit flat non-pins of center wiring and arrange single-chip package part product.
Wafer thickness thinning 110 μ m, wherein the thickness of ground floor IC chip 4 is 210 μ m μ m, the thickness of second layer IC chip 10 is 110 μ m;
Core on the step 2
During greater than 1.2mm, an IC chip 4 of stacked package and the 2nd IC chip 10 adopt once goes up core respectively to each edge lengths of the one IC chip 4, once toasts than each edge lengths of the 2nd IC chip 10;
On lead frame carrier 1, paste earlier an IC chip 4, paste an IC chip 4 after, change chip feeder with glue film 16 function bonding dies; Fix the 2nd IC chip 10 wafers of the back side band glue film 16 of scribing, adjustment chip feeder substrate heating temperature will transmit box and be elevated to desired location; Transmit a semi-finished product framework to track centre; Chip feeder is automatically drawn the central authorities that 1 the 2nd IC chip 10 is placed on an IC chip 4, and all the 2nd IC chips 10 that glued this framework successively take in the transmission box, has glued to dress up article behind all the 2nd IC chips 10 of this batch and send baking; Adopt anti-absciss layer baking technology baking 3 hours, 150 ℃ of baking temperatures;
The semi-finished product lead frame that will be stained with the center wiring grommet 2 of the 2nd IC chip 10 earlier transmits the feeding platform that box is placed on press welder; Then gold thread or copper cash axle are fixed on the pressure welding platform; Start the automatic charging device of press welder, the finished product lead frame transmits box and rises to desired location automatically, releases a semi-finished product lead frame to track and send into the pressure welding workbench and heat; Temperature is 220 ℃, carries out bonding wire by setting program.Core pressure welding material also is gold thread and copper cash on the stack package secondary; Pad on the 2nd IC chip 10 both carried out bonding wire with an IC chip 4, again and 22 pressure weldings of interior pad group of center wiring grommet 2, and the outer pad group 23 of center wiring grommet 2 17 routings of pin both and in first; Again and second in 19 routings of pin; Select forehand, instead beat, multiple bank form, anti-principal vertical line and short-circuit between conductors;
The device that the conventional method that adopts relevant packing forms forms after to pressure welding carries out plastic packaging, the back is solidified, printed.
Filing separates, and the semi-finished product base of frame of having printed is corroded earlier, and the lead frame back side erodes 0.045mm, carries out grinding then, polishing thickness is 0.065mm;
To connecting muscle between filing separation pin, adopt chemical plating method to electroplate the copper of one deck 10 μ m earlier, electroplate the pure tin of 15 μ m then;
Adopt the conventional method of relevant packing forms that the device of electroplating back formation is carried out product separation, visual inspection, packing, process packaging part product of the present invention.
Wafer thickness thinning 210 μ m, wherein the thickness of ground floor IC chip 4 is 180 μ m μ m, the thickness of second layer IC chip 10 is 150 μ m;
Core on the step 2
When each edge lengths of an IC chip 4 than each edge lengths of the 2nd IC chip 10 during less than 1.2mm, an IC chip 4 of stacked package and the 2nd IC chip 10 adopt that core toasts respectively on the secondaries, it once goes up the same conventionally core of core;
Core on the insulating cement secondary
Core on this packaging insulating glue secondary; The second bonding die glue 9 (insulating cement QMI538) on the positive point earlier of an IC chip 4, again with the absorption of the 2nd IC chip be bonded at the second bonding die glue 9 (insulating cement QMI538) above, glued these all the 2nd IC chips 10 to deliver to the transmission box; After Using such method has been glued all the 2nd IC chips 10 of this batch; The semi-finished product lead frame that last core is good send baking, under 150 ℃, adopts anti-hierarchical process baking to bake in 3 hours;
The semi-finished product lead frame that will be stained with the center wiring grommet 2 of the 2nd IC chip 10 earlier transmits the feeding platform that box is placed on press welder; Then gold thread or copper cash axle are fixed on the pressure welding platform; Start the automatic charging device of press welder, the finished product lead frame transmits box and rises to desired location automatically, releases a semi-finished product lead frame to track and send into the pressure welding workbench and heat; 200 ℃ of temperature are carried out bonding wire by setting program.Core pressure welding material also is gold thread and copper cash on the stacked package secondary; Pad on the 2nd IC chip 10 both carried out bonding wire with an IC chip 4, again and 22 pressure weldings of the inner ring pad of center wiring grommet 2, and the outer ring pad 23 of center wiring grommet 2 17 routings between pin both and in first; Again and second in 19 routings of pin; Select forehand, instead beat, multiple bank form, anti-principal vertical line and short-circuit between conductors;
The device that the conventional method that adopts relevant packing forms forms after to pressure welding carries out plastic packaging, the back is solidified, printed.
Laser method separates, and the semi-finished product base of frame of having printed is cut off with company's muscle of laser means with inside and outside pin, and the depth of cut of laser cuts 21 is 0.11mm;
To connecting muscle between laser method separation pin, adopt the pure tin of chemical plating method Direct Electroplating 7 μ m.
The separation of step 7 product, visual inspection, packing
Adopt the conventional method of relevant packing forms that the device of electroplating back formation is carried out product separation, visual inspection, packing, process the packaging part product.
Wafer thickness thinning 210 μ m, wherein the thickness of ground floor IC chip 4 is 180 μ m μ m, the thickness of second layer IC chip 10 is 150 μ m;
Core on the step 2
When each edge lengths of an IC chip 4 than each edge lengths of the 2nd IC chip 10 during less than 1.2mm, an IC chip 4 of stacked package and the 2nd IC chip 10 adopt that core toasts respectively on the secondaries, it once goes up the same conventionally core of core;
Core on the glue film secondary
Use has the equipment of core function on the glue film 16; Stick glue film 16 at the back side of the 2nd IC chip 10 before the scribing, fix the wafer of the 2nd IC chip 10 of band glue film 16 earlier, send behind the equipment automatic charging one the article of the dressing up framework of a pressure welding to the bonding die platform; 150 ℃ of substrate heating; The 2nd IC chip 10 absorption with band glue film 16 are placed on an IC chip 4 fronts, have glued these all the 2nd IC chips 10 and have delivered to the transmission box; Using such method has been glued the framework semi-finished product of core on all the 2nd IC chips 10 of this batch under 150 ℃, adopts anti-hierarchical process baking to bake in 3 hours;
The semi-finished product lead frame that will be stained with the center wiring grommet 2 of the 2nd IC chip 10 earlier transmits the feeding platform that box is placed on press welder; Then gold thread or copper cash axle are fixed on the pressure welding platform; Start the automatic charging device of press welder, the finished product lead frame transmits box and rises to desired location automatically, releases a semi-finished product lead frame to track and send into the pressure welding workbench and heat; Temperature is 180 ℃, carries out bonding wire by setting program.Core pressure welding material also is gold thread and copper cash on the stack package secondary; Pad on the 2nd IC chip 10 both carried out bonding wire with an IC chip 4, again and 22 pressure weldings of the inner ring pad of center wiring grommet 2, and the outer ring pad 23 of center wiring grommet 2 17 routings of pin both and in first; Again and second in 19 routings of pin; Select forehand, instead beat, multiple bank form, anti-principal vertical line and short-circuit between conductors;
The device that the conventional method that adopts relevant packing forms forms after to pressure welding carries out plastic packaging, the back is solidified, printed.
Laser method separates, and the semi-finished product base of frame of having printed is cut off with company's muscle of laser means with inside and outside pin, and the depth of cut of laser cuts 21 is 0.12mm;
To connecting muscle between laser method separation pin, adopt the pure tin of chemical plating method Direct Electroplating 15 μ m.
The separation of step 7 product, visual inspection, packing
Adopt the conventional method of relevant packing forms that the device of electroplating back formation is carried out product separation, visual inspection, packing, process the packaging part product.
Wafer thickness thinning 210 μ m, wherein the thickness of ground floor IC chip 4 is 180 μ m μ m, the thickness of second layer IC chip 10 is 150 μ m;
Core on the step 2
When each edge lengths of an IC chip 4 than each edge lengths of the 2nd IC chip 10 during less than 1.2mm, an IC chip 4 of stacked package and the 2nd IC chip 10 adopt that core toasts respectively on the secondaries, it once goes up the same conventionally core of core;
Core on the glue film secondary
Use has the equipment of core function on the glue film; Stick glue film 16 at the back side of the 2nd IC chip 10 before the scribing, fix the wafer of the 2nd IC chip 10 of band glue film 16 earlier, send behind the equipment automatic charging one the article of the dressing up framework of a pressure welding to the bonding die platform; 120 ℃ of substrate heating; The 2nd IC chip 10 absorption with band glue film 16 are placed on an IC chip 4 fronts, have glued these all the 2nd IC chips 10 and have delivered to the transmission box; Using such method has been glued the framework semi-finished product of core on all the 2nd IC chips 10 of this batch under 150 ℃, adopts anti-hierarchical process baking to bake in 3 hours;
The semi-finished product lead frame that will be stained with the center wiring grommet of the 2nd IC chip 10 earlier transmits the feeding platform that box is placed on press welder; Then gold thread or copper cash axle are fixed on the pressure welding platform; Start the automatic charging device of press welder, the finished product lead frame transmits box and rises to desired location automatically, releases a semi-finished product lead frame to track and send into the pressure welding workbench and heat; Temperature is 180 ℃, carries out bonding wire by setting program.Core pressure welding material also is gold thread and copper cash on the stack package secondary; Pad on the 2nd IC chip 10 both carried out bonding wire with an IC chip 4, again and 22 pressure weldings of the inner ring pad of center wiring grommet 2, and the outer ring pad 23 of center wiring grommet 2 17 routings of pin both and in first; Again and second in 19 routings of pin; Select forehand, instead beat, multiple bank form, anti-principal vertical line and short-circuit between conductors;
The device that the conventional method that adopts relevant packing forms forms after to pressure welding carries out plastic packaging, the back is solidified, printed.
Laser method separates, and the semi-finished product base of frame of having printed is cut off with company's muscle of laser means with inside and outside pin, and the depth of cut of laser cuts 21 is 0.12mm;
To connecting muscle between laser method separation pin, adopt the pure tin of chemical plating method Direct Electroplating 15 μ m.
The separation of step 7 product, visual inspection, packing
Adopt the conventional method of relevant packing forms that the device of electroplating back formation is carried out product separation, visual inspection, packing, warehouse-in, process the packaging part product.
Wafer thickness thinning 210 μ m, wherein the thickness of ground floor IC chip 4 is 180 μ m μ m, the thickness of second layer IC chip 10 is 150 μ m;
Core on the step 2
When each edge lengths of an IC chip 4 than each edge lengths of the 2nd IC chip 10 during less than 1.2mm, an IC chip 4 of stacked package and the 2nd IC chip 10 adopt that core toasts respectively on the secondaries, it once goes up the same conventionally core of core;
Core on the insulating cement secondary
Core on this packaging insulating glue secondary; The second bonding die glue 9 (insulating cement 2025) on the positive point earlier of an IC chip 4 are bonded at the second bonding die glue 9 (insulating cement 2025) with the absorption of the 2nd IC chip again) above, glued these all the 2nd IC chips 10 to deliver to the transmission box; After Using such method has been glued all the 2nd IC chips 10 of this batch; The semi-finished product lead frame that last core is good send baking, under 150 ℃, adopts anti-hierarchical process baking to bake in 3 hours;
The semi-finished product lead frame that will be stained with the center wiring grommet of the 2nd IC chip 10 earlier transmits the feeding platform that box is placed on press welder; Then gold thread or copper cash axle are fixed on the pressure welding platform; Start the automatic charging device of press welder, the finished product lead frame transmits box and rises to desired location automatically, releases a semi-finished product lead frame to track and send into the pressure welding workbench and heat; 200 ℃ of temperature are carried out bonding wire by setting program.Core pressure welding material also is gold thread and copper cash on the stacked package secondary; Pad on the 2nd IC chip both carried out bonding wire with an IC chip, again and pressure welding between the inner ring pad of center wiring grommet, and the outer ring pad of center wiring grommet routing between pin both and in first; Routing between pin again and in second; Select forehand, instead beat, multiple bank form, anti-principal vertical line and short-circuit between conductors;
The device that the conventional method that adopts relevant packing forms forms after to pressure welding carries out plastic packaging, the back is solidified, printed.
Laser method separates, and the semi-finished product base of frame of having printed is cut off with company's muscle of laser means with inside and outside pin, and the depth of cut of laser cuts 21 is 0.11mm;
To connecting muscle between laser method separation pin, adopt the pure tin of chemical plating method Direct Electroplating 7 μ m.
Adopt the conventional method of relevant packing forms that the device of electroplating back formation is carried out product separation, visual inspection, packing, warehouse-in, process the two circles of four limit flat non-pins of center wiring and arrange stack package and production method thereof
Though illustrated and described the present invention in conjunction with the preferred embodiments, those skilled in the art can the people understand, and under the prerequisite of the spirit and scope of the present invention that limit without prejudice to accompanying claims, can make amendment and conversion.
Claims (7)
1. the two circles of center wiring are arranged the chip-stacked packaging part of IC; Comprise pin, IC chip, bonding line and plastic-sealed body in lead frame carrier, the support lead; It is characterized in that: said lead frame carrier (1) goes up a bonding IC chip (4); Pile up on the said IC chip (4) the 2nd IC chip (10) is arranged; A said IC chip (4) outside is provided with center wiring grommet (2); The outside of said center wiring grommet (2) is provided with pin in two circles, is respectively in first pin (19) in the pin (17) and second, and front etch goes out 1/2 first pit (18) that the degree of depth is a leadframe thickness between the interior pin of said two circles; Erode away the degree of depth in first in the pin (17) and second bottom the pin (19) and be 1/2 second pit (27) of leadframe thickness; Said center wiring grommet (2) is provided with inner ring pad (22) and outer ring pad (23) two circle pads, said inner ring pad (22) respectively with the pad routing of an IC chip (4) and the 2nd IC chip (10), said outer ring pad (23) respectively with first in the pin (17) and second interior pin (19) routing.
2. the two circles of a kind of center wiring according to claim 1 are arranged the chip-stacked packaging part of IC; It is characterized in that: a said IC chip (4) is connected to form the 5th bonding line (11) with the 2nd IC chip (10) routing, and a said IC chip (4) is connected to form first bonding line (5) and second bonding line (6) with inner ring pad (22) routing of center wiring grommet (2); Said the 2nd IC chip (10) is connected to form the 6th bonding line (12) and the 7th bonding line (13) with inner ring pad (22) routing of center wiring grommet (2); Arcing pin (17) in first is gone up and is formed triple bond zygonema (7) and the 8th bonding line (14) behind said outer ring pad (23) routing, and arcing pin (19) in second is gone up and formed quadruple linkage zygonema (8) and the 9th bonding line (15) behind the routing.
3. the two circles of a kind of center wiring according to claim 1 and 2 are arranged the chip-stacked packaging part of IC; It is characterized in that: said center wiring grommet (2) is inlayed or is sticked on the lead frame carrier (1), communicates through center wiring grommet (2) between said inner ring pad (22) and the outer ring pad (23).
4. the preparation method that the two circles of a kind of center wiring according to claim 1 are arranged the chip-stacked packaging part of IC; Technological process is attenuate, scribing, goes up core, pressure welding, plastic packaging, back curing, prints, separates pin, plating, product separation, visual inspection, packing, warehouse-in; Wherein except that pressure welding, separate pin, the electroplating work procedure; Other operation all adopts the common process method of relevant packing forms, it is characterized in that said technical process is:
Step 1 attenuate, scribing
Adopt the conventional method of relevant packing forms to carry out;
Core on the step 2
A, twin-core sheet pile up once goes up core
When each edge lengths of an IC chip (4) than each edge lengths of the 2nd IC chip (10) during greater than 1.2mm, an IC chip (4) of stacked package and the 2nd IC chip (10) adopt once goes up core respectively, once toasts;
B, twin-core sheet pile up core on the secondary
When each edge lengths of an IC chip (4) than each edge lengths of the 2nd IC chip (10) during less than 1.2mm, an IC chip (4) of stacked package and the 2nd IC chip (10) adopt that core toasts respectively on the secondary;
Step 3 pressure welding
Core pressure welding material also is gold thread and copper cash on the stacked package secondary; Pad on the 2nd IC chip (10) both carried out bonding wire with an IC chip (4), again and pressure welding between the interior pad group (22) of center wiring grommet (2), and the outer pad group (23) of center wiring grommet (2) routing between pin (17) both and in first; Routing between pin (19) again and in the outer ring second; Select forehand, instead beat, multiple bank form, anti-principal vertical line and short-circuit between conductors;
Step 4 plastic packaging, back are solidified, are printed
The device that the conventional method that adopts relevant packing forms forms after to pressure welding carries out plastic packaging, the back is solidified, printed;
Step 5 is separated pin
Filing separates, and the semi-finished product base of frame of having printed is corroded earlier, and the lead frame back side erodes 0.045mm～0.065mm, carries out grinding then, polishing thickness is 0.065mm～0.045mm;
Step 6 is electroplated
To connecting muscle between filing separation pin, adopt chemical plating method to electroplate the copper of one deck 8 μ m～10 μ m earlier, electroplate the pure tin of 7 μ m～15 μ m then;
The separation of step 7 product, visual inspection, packing
Adopt the conventional method of relevant packing forms that the device of electroplating back formation is carried out product separation, visual inspection, packing.
5. the preparation method that the two circles of a kind of center wiring according to claim 4 are arranged the chip-stacked packaging part of IC; It is characterized in that said step b twin-core sheet piles up core on the secondary; On using the insulating cement secondary during core; At the last second bonding die glue insulating cement (9) of the positive point earlier of an IC chip (4), the 2nd IC chip (10) is adsorbed be bonded at above the second bonding die glue (9) again, glued the 2nd IC chip (10) after; The semi-finished product lead frame that last core is good send baking, toasts down at 150 ℃ and bakes in 3 hours.
6. the preparation methods that wiring two circles in a kind of center according to claim 4 are arranged the chip-stacked packaging part of IC is characterized in that said step b twin-core sheet piles up core on the secondary, on using the glue film secondary during core; Use has the equipment of core function on the glue film; Stick glue film (16) at the back side of the 2nd IC chip (10) before the scribing, fix the wafer of the 2nd IC chip (10) earlier, 120 ℃～150 ℃ of substrate heating; Will be with the 2nd IC chip (10) absorption of glue film (16); Be placed on IC chip (a 4) front, glued the 2nd IC chip (10) after, the lead frame semi-finished product of last core are 150 ℃ of down bakings 3 hours.
7. the preparation method that the two circles of a kind of center wiring according to claim 4 are arranged the chip-stacked packaging part of IC; It is characterized in that said step 5 separation pin: adopt laser method to separate; The semi-finished product base of frame of having printed is cut off with company's muscle of laser means with inside and outside pin, and the depth of cut of laser cuts 21 is 0.11mm+0.01mm; Step 6 is electroplated: laser method is separated between pin connect muscle, adopt the pure tin of chemical plating method Direct Electroplating 7 μ m～15 μ m.
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| CN201110455052.4A CN102522383B (en) | 2011-12-31 | 2011-12-31 | A kind of IC chip stacked packaging piece with two-ring-arrangement center routing and production method thereof |
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