CN102522352B - The checkout gear of apparatus for stability of ion beam and detection method - Google Patents

The checkout gear of apparatus for stability of ion beam and detection method Download PDF

Info

Publication number
CN102522352B
CN102522352B CN201110436369.3A CN201110436369A CN102522352B CN 102522352 B CN102522352 B CN 102522352B CN 201110436369 A CN201110436369 A CN 201110436369A CN 102522352 B CN102522352 B CN 102522352B
Authority
CN
China
Prior art keywords
value
current detection
ion beam
deviate
stability
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201110436369.3A
Other languages
Chinese (zh)
Other versions
CN102522352A (en
Inventor
方亮
贾敏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Huahong Grace Semiconductor Manufacturing Corp
Original Assignee
Shanghai Huahong Grace Semiconductor Manufacturing Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Huahong Grace Semiconductor Manufacturing Corp filed Critical Shanghai Huahong Grace Semiconductor Manufacturing Corp
Priority to CN201110436369.3A priority Critical patent/CN102522352B/en
Publication of CN102522352A publication Critical patent/CN102522352A/en
Application granted granted Critical
Publication of CN102522352B publication Critical patent/CN102522352B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Electron Sources, Ion Sources (AREA)

Abstract

The checkout gear of apparatus for stability of ion beam and a detection method, described detection method comprises: provide wafer; Before wafer is injected or afterwards, multiple current detection values of ion beam are obtained, the weighted value that calculating current detected value is corresponding; Calculate mean value and the variance of Weight distance; Obtain mean value and the first deviate corresponding to variance yields, mean value and the second deviate corresponding to variance yields, the first deviate is less than the second deviate; If mean value and variance yields are more than or equal to the first corresponding deviate with the absolute value of the difference of corresponding standard value, or mean value or variance yields are more than or equal to the second corresponding deviate with the absolute value of the difference of corresponding standard value, then ion beam is instability state.The method of the embodiment of the present invention can accurately detect the stability of ion implantation technology.

Description

The checkout gear of apparatus for stability of ion beam and detection method
Technical field
The present invention relates to field of semiconductor fabrication, particularly the checkout gear of the apparatus for stability of ion beam of ion implantation device and detection method.
Background technology
Ion implantation is a kind of technology be optionally injected into by impurity material in semiconductor technology in semi-conducting material.Impurity material is ionized in ionization chamber, these ions is accelerated to form the ion beam with setting energy, ion beam bombardment crystal column surface, and enters depth relevant to energy in wafer.
The impurity material of gas or solid is converted into ion beam by ion implantor usually in ionization chamber, and this ion beam can be carried out quality analysis to eliminate undesired ionic species, and accelerates to the energy of expection, and is directed to crystal column surface.Described ion beam can be spot beam (spotbeam) or ribbon beam (ribbonbeam).
The stability being injected into the impurity of projected dose for the semiconductor device guaranteeing wafer is formed in wafer is most important.The CURRENT DISTRIBUTION of ion beam is the key factor affecting impurity dose, obtains the stability that stable impurity dose needs to ensure ion beam current.The fluctuation of ion beam current can reduce the stability of impurity dose, and the fluctuation of impurity dose can cause the concentration of the ion be injected in wafer and the degree of depth different and different with region, affect the stability of the semiconductor device that wafer is formed, time serious, can semiconductor device failure be made.
Along with the progress of semiconductor technology, more and more need the information monitoring respective handling equipment in each processing step, to ensure the stability of each technological process.Ion implantation, as the very important technique of in semiconductor fabrication techniques, in order to ensure the stability of ion implantation technology, therefore in semiconductor process, also becomes extremely important to the detection of the apparatus for stability of ion beam of ion implantation device.
The ion beam that existing ion implantation device has for detecting ion beam current detects arm, described ion beam detects on arm and comprises the multiple detecting sensors be located along the same line, the width of multiple detecting sensor is suitable with the diameter of ion beam, the corresponding multiple current detection value of multiple detecting sensor, when ion implantation device produces ion beam, the concentration of ion beam intermediate ion is successively decreased from center to surrounding.When ion beam detects arm ion beam, the ion beam detecting sensor detected on arm obtains multiple current detection values of ion beam, under normal conditions, multiple current detection value Shi Cong centers of ion beam that transducer detects reduce gradually to both sides, in normal distribution.But in actual production process, can change compared with the value detected multiple current detection value and the last time of the ion beam of detection, be difficult to like this go according to the size variation of multiple current value the stability judging ion beam.
Summary of the invention
The problem that the present invention solves is to provide a kind of checkout gear and detection method of apparatus for stability of ion beam, for judging the stability of ion beam.
For solving the problem, the invention provides a kind of checkout gear of apparatus for stability of ion beam, it is characterized in that, comprising:
Detecting unit, for detecting the current value of ion beam, described detecting unit comprises and is positioned at collinear equally spaced multiple current detection sensor, the corresponding multiple current detection value of multiple current detection sensor;
Comparing unit, for detecting multiple current detection values of gained according to detecting unit, compares the size of current detection value, obtains the maximum of current detection value;
Computing unit, current detection value and comparing unit for detecting gained according to detecting unit compare the maximum in the current detection value of gained, calculate the weighted value that each current detection value is corresponding, and according to the relative distance between weighted value, current detection sensor, calculate mean value and the variance of Weight distance;
Judging unit, for calculating the mean value of gained and/or the size of variance and corresponding standard value according to computing unit, judging that ion beam is stable state or unsteady state, if ion beam is unsteady state, then providing warning message.
Optionally, described computing unit comprises the first computing unit and the second computing unit, described first computing unit compares the maximum in the current detection value of gained for the current detection value and comparing unit detecting gained according to detecting unit, calculate the weighted value that each current detection value is corresponding, described second computing unit, for the spacing between the weighted value according to the first computing unit calculating gained, current detection sensor, calculates mean value and the variance of Weight distance.
Optionally, described first computing unit obtains weighted value by following formula:
x n = b n t
t＝Max(b 1,b 2,…,b n)
Wherein, x nbe the weighted value that the n-th current detection value is corresponding, b nfor current detection value, n is the number of current detection value, and t is the maximum of current detection value.
Optionally, described second computing unit obtains mean value and the variance of Weight distance by following formula:
μ = x 1 + x 2 * a + ... + x n * ( n - 1 ) * a x 1 + x 2 + ... + x n
σ = x 1 * ( 1 - μ ) 2 + x 2 * ( a - μ ) 2 + ... + x n * [ ( n - 1 ) * a - μ ] 2 x 1 + x 2 + ... + x n - 0.01
Wherein, μ is the mean value of Weight distance, and σ is the variance yields of Weight distance, and n is the number of weighted value, and a is the spacing between two adjacent detecting sensors for obtaining current detection value.
Optionally, the number of described current detection sensor is more than or equal to 5.
Optionally, the number of described current detection sensor is more than or equal to the odd number of 5.
Optionally, described current detection sensor is Faraday cup or many multipixel dose array.
Optionally, total spacing of described current detection sensor is more than or equal to the width of ion beam.
Optionally, also comprise display unit, for showing the information of detecting unit, comparing unit, computing unit, judging unit.
Present invention also offers a kind of detection method of apparatus for stability of ion beam, comprising:
Wafer is provided;
Before wafer is injected or afterwards, multiple current detection values of ion beam are obtained, the weighted value that calculating current detected value is corresponding;
Calculate mean value and the variance of Weight distance;
Obtain mean value and the first deviate corresponding to variance yields, mean value and the second deviate corresponding to variance yields, the first deviate is less than the second deviate;
If mean value and variance yields are more than or equal to the first corresponding deviate with the absolute value of the difference of corresponding standard value, or mean value or variance yields are more than or equal to the second corresponding deviate with the absolute value of the difference of corresponding standard value, then ion beam is instability state; If mean value and variance yields are less than the first corresponding deviate with the absolute value of the difference of corresponding standard value, or a value in mean value or variance yields is greater than the first corresponding deviate with the absolute value of the difference of corresponding standard value and is less than the second corresponding deviate, another value and the absolute value of the difference of corresponding standard value are less than the first corresponding deviate, then ion beam is stability status.
Optionally, described mean value and the first deviate corresponding to variance yields are 10% of the standard value of mean value and variance yields.
Optionally, described mean value and the second deviate corresponding to variance yields are 20% of the standard value of mean value and variance yields.
Optionally, the weighted value that described current detection value is corresponding is obtained by following formula:
x n = b n t
t＝Max(b 1,b 2,…,b n)n≥5
Wherein, x nbe the weighted value that the n-th current detection value is corresponding, b nfor current detection value, n is the number of current detection value, and t is the maximum of current detection value.
Optionally, the mean value of described Weight distance and variance are obtained by following formula:
μ = x 1 + x 2 * a + ... + x n * ( n - 1 ) * a x 1 + x 2 + ... + x n
σ = x 1 * ( 1 - μ ) 2 + x 2 * ( a - μ ) 2 + ... + x n * [ ( n - 1 ) * a - μ ] 2 x 1 + x 2 + ... + x n - 0.01
Wherein, μ is the mean value of Weight distance, and σ is the variance yields of Weight distance, and n is the number of weighted value, and a is the spacing between two adjacent detecting sensors for obtaining current detection value.
Compared with prior art, technical solution of the present invention has the following advantages:
By multiple discrete current detection value being converted into the average value mu of the Weight distance corresponding with current detection value and variances sigma in order to weigh the stability of ion beam, only mean value and variance need be compared with corresponding standard value, and criterion can be determined very easily, deterministic process is simple and convenient, improve the accuracy of efficiency and judgement, especially when the number of current detection value is greater than 5, the accuracy and efficiency judged is higher, improves the detectability of the stability of ion beam.
In addition, by setting criterion first deviate and the second deviate, first deviate is less than the second deviate, if mean value and variance yields are more than or equal to the first corresponding deviate with the absolute value of the difference of corresponding standard value, or mean value or variance yields are more than or equal to the second corresponding deviate with the absolute value of the difference of corresponding standard value, then ion beam is instability state; If mean value and variance yields are less than the first corresponding deviate with the absolute value of the difference of corresponding standard value, or a value in mean value or variance yields is greater than the first corresponding deviate with the absolute value of the difference of corresponding standard value and is less than the second corresponding deviate, another value and the absolute value of the difference of corresponding standard value are less than the first corresponding deviate, then ion beam is stability status, flexibility when improve judgement and accuracy, preventing the accidental saltus step of the ion beam by not affecting semiconductor device stability, being judged as unsteady state.
Accompanying drawing explanation
Fig. 1 ~ Fig. 2 is the structural representation of the checkout gear of embodiment of the present invention apparatus for stability of ion beam;
Fig. 3 is the schematic flow sheet of the detection method of embodiment of the present invention apparatus for stability of ion beam.
Embodiment
Existing ion implantation device detects the multiple detecting sensors on arm by ion beam, detect the current value of ion beam, obtain multiple current detection values of reactive ion beam stability, under normal conditions, ion beam detects the current value of the corresponding ion beam center of current detection value that in the middle of on arm, position probing arrives, the current detection value in ion beam centre position is maximum, the current detection value on ion beam both sides reduces gradually, multiple current detection value is normal distribution, inventor finds in the production process of reality, the multiple current detection values detected can change, such as: the current value of the ion beam that the detecting sensor of same position detects catches up with the current value time to detect can be different, or the current value that the detecting sensor in centre position detects not is maximum, multiple current detection value that very difficult basis detects and the multiple current detection values detected last time carry out contrast and go to judge whether electron beam is stablized, even if set up the multiple standard values corresponding with multiple current value, deterministic process is comparatively complicated, criterion is difficult to determine, so also be difficult to judge whether electron beam is stablized accurately, the semiconductor device formed under such ion beam, add the risk that semiconductor device reliability reduces.
For solving the problem, inventor proposes a kind of detection method and checkout gear of apparatus for stability of ion beam, and the detection method of described apparatus for stability of ion beam, comprising: provide wafer; Before wafer is injected or afterwards, multiple current detection values of ion beam are obtained, the weighted value that calculating current detected value is corresponding; Calculate mean value and the variance of Weight distance; Obtain mean value and the first deviate corresponding to variance yields, mean value and the second deviate corresponding to variance yields, the first deviate is less than the second deviate; If mean value and variance yields are more than or equal to the first corresponding deviate with the absolute value of the difference of corresponding standard value, or mean value or variance yields are more than or equal to the second corresponding deviate with the absolute value of the difference of corresponding standard value, then ion beam is instability state; If mean value and variance yields are less than the first corresponding deviate with the absolute value of the difference of corresponding standard value, or a value in mean value or variance yields is greater than the first corresponding deviate with the absolute value of the difference of corresponding standard value and is less than the second corresponding deviate, another value and the absolute value of the difference of corresponding standard value are less than the first corresponding deviate, then ion beam is stability status.Method of the present invention can accurately detect the stability of ion implantation technology, improves the stability of injection technology.
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.When describing the embodiment of the present invention in detail, for ease of illustrating, schematic diagram can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, and it should not limit the scope of the invention at this.In addition, the three-dimensional space of length, width and the degree of depth should be comprised in actual fabrication.
With reference to the structural representation that figure 1, Fig. 1 is the checkout gear of embodiment of the present invention apparatus for stability of ion beam, the checkout gear of described apparatus for stability of ion beam comprises: detecting unit 200, comparing unit 201, computing unit 202, judging unit 203 and display unit 204.
Described detecting unit 200 is for detecting the current value of ion beam 20, and described detecting unit 200 comprises and is positioned at collinear equally spaced multiple current detection sensor 30, the corresponding multiple current detection value of multiple current detection sensor 30.Detecting unit 200 is when detecting the current value of ion beam 20, and can be that fixed position is detected, also can detect for scan mode, the direction of scanning be vertical with ion beam 20 incident direction.
Described ion beam 20 can be spot beam or ribbon beam, and spot beam can be fixing or static spot beam; Ribbon beam can have large depth-width ratio, and for spot beam in the present embodiment, the sectional view of spot beam is circular or similar round.
Described current detection sensor 30 is Faraday cup (faradaycup) or many multipixel dose array, the number of current detection sensor 30 is more than or equal to 5, spacing between two current detection sensors 30 is equal, total spacing of current detection sensor 30 is more than or equal to the width of ion beam 20, relative to existing 5 current detection sensors 30, the current detection sensor 30 of more than 5, measure the current detection value of ion beam 20 obtained more, more can the stability of reactive ion beam accurately.
In other embodiments of the invention, the number of current detection sensor be more than or equal to 5 odd number, when current detection sensor equidistantly arranges, the center of the corresponding electron beam of middle current detection sensor, relative to the current detection sensor that even number equidistantly arranges, the center position of what the current detection sensor in the middle of the even number current detection sensor of equidistant arrangement was corresponding is not ion beam, improves accuracy and the precision of detection.
In this enforcement, the number of described current detection sensor 30 is 5, please refer to Fig. 2, Fig. 2 is the structural representation of embodiment of the present invention detecting unit, 5 current detection sensors 30 are positioned on the same straight line on detecting unit 200, spacing between 2 adjacent current detection sensors 30 is a, total spacing of 5 current detection sensors 30 is b, in example of the present invention, when calculating spacing a and total spacing b, the size of current detection sensor 30 is ignored, and total spacing b of described 5 current detection sensors 30 equals or slightly larger than the width of ion beam 20.When ion beam 20 is spot beam, described width refers to the diameter of ion beam cross section, when ion beam 20 is ribbon beam, described width is that the nose of ion beam cross section is wide, when being initial position with first of the left side or the right current detection sensor 30, the position coordinates of other 4 current detection sensors 30 corresponding is 1a, 2a, 3a, 4a, total spacing b of 5 current detection sensors 30 equals or slightly larger than the width of ion beam 20, the current value of 5 positions of current value reactive ion beam 20 from centre to both sides that 5 current detection sensors 30 detect.
Described comparing unit 201, for detecting multiple current detection values of gained according to detecting unit 200, compares the size of current detection value, obtains the maximum of current detection value.The current detection value that 5 detecting sensors 30 (shown in Fig. 2) as detecting unit in the embodiment of the present invention 200 detection obtain is followed successively by b 1, b 2, b 3, b 4, b 5, comparing unit 201 is by comparing b 1, b 2, b 3, b 4, b 5the maximum that obtains in 5 current detection values of size be expressed as t.Comparing unit 201 obtains maximum t and meets formula (1):
t＝Max(b 1,b 2,…,b n)(1)
Wherein n is the number of current detection value, and in the present embodiment, n equals 5, and n is greater than 5 in other embodiments of the invention.
Described computing unit 202 compares the maximum t in the current detection value of gained for the current detection value and comparing unit 201 detecting gained according to detecting unit 200, calculate the weighted value that each current detection value is corresponding, and according to the spacing between weighted value, current detection sensor, calculate mean value and the variance of Weight distance.
Described computing unit 202 comprises the first computing unit 202a and the second computing unit 202b, described first computing unit 202a compares the maximum in the current detection value of gained for the current detection value and comparing unit 201 detecting gained according to detecting unit 200, calculate the weighted value that each current detection value is corresponding.In the present embodiment, comparing unit 201 compares the maximum in the current detection value of gained is t, detecting unit 200 is detected the current detection value b of gained 1, b 2, b 3, b 4, b 5respectively divided by maximum t, obtain the weighted value x that current detection value is corresponding 1, x 2, x 3, x 4, x 5.Computing unit 202 calculates each current detection value b ncorresponding weighted value x nmeet formula (2):
x n = b n t - - - ( 2 )
Wherein, n is the number of current detection value and weighted value, and n equals 5 in the present embodiment, and n is greater than 5 in other embodiments of the invention.All current detection values are converted to percentage weight value, reflect that the stability of ion beam is simple and convenient by the mean value of percentage Weight distance and variance yields, the ion beam of current value due to to(for) different-energy is all be converted to percentage weight value, the mean value of the current value percentage Weight distance of the ion beam of different-energy is very close with variance yields, therefore when the stability of follow-up judgement ion beam, only can set first deviate and the second deviate, and do not need the first different deviate of the beam set of different-energy and the second deviate, simplify operating procedure, improve efficiency.Certainly, in the application of reality, can according to the requirement of technique, first deviate different to the beam set of different-energy and the second deviate.
Described second computing unit 202b, for the spacing between the weighted value according to the first computing unit 202a calculating gained, current detection sensor 30, calculates mean value and the variance of Weight distance.With reference to figure 2, spacing between two current detection sensors 30 is a, when being initial position with first of the left side or the right current detection sensor 30, the position coordinates of other 4 current detection sensors 30 corresponding is 1a, 2a, 3a, 4a, and average value mu and the variances sigma of the second computing unit 202b calculating Weight distance meet formula (3) and formula (4):
μ = x 1 + x 2 * a + ... + x n * ( n - 1 ) * a x 1 + x 2 + ... + x n - - - ( 3 )
σ = x 1 * ( 1 - μ ) 2 + x 2 * ( a - μ ) 2 + ... + x n * [ ( n - 1 ) * a - μ ] 2 x 1 + x 2 + ... + x n - 0.01 - - - ( 4 )
Wherein, b nfor current detection value, x nfor weighted value, a is the spacing of two adjacent current detecting sensors 30, and n is the number of current detection value or weighted value, and in the present embodiment, n equals 5, and in other embodiments of the present invention, n is greater than 5.
During calculating mean value μ, the relative position of each current detection sensor 30 is incorporated into formula (3) and formula (4), the size for ion beam 20 center electric current of the average value mu representative calculated, the dispersion degree of variances sigma reaction average value mu.The multiple current detection value detected due to existing basis and the multiple current detection values detected last time carry out contrast and go to judge whether electron beam is stablized, or multiple standard values that multiple current detection value is corresponding with multiple current values of foundation compare, but deterministic process is comparatively complicated, criterion is difficult to determine, so also be difficult to judge whether electron beam is stablized accurately, the embodiment of the present invention is passed through multiple discrete current detection value b nbe converted into and current detection value b nthe average value mu of corresponding Weight distance and variances sigma are in order to weigh the stability of ion beam 20, only average value mu and variances sigma need be compared with corresponding standard value, and criterion can be determined very easily, deterministic process is simple and convenient, improve the accuracy of efficiency and judgement, especially current detection value b nnumber when being greater than 5, the accuracy and efficiency of judgement is higher, improves the detectability of the stability of ion beam 20.
Judging unit 203, for calculating the average value mu of gained and/or the size of variances sigma and corresponding standard value according to computing unit 202, judges that ion beam is stable state or unsteady state, if ion beam is unsteady state, then provides warning message.Described judging unit 203 can also store for the relevant information judged and compare.Deviate described in the embodiment of the present invention refers to the absolute value of average value mu and the difference between variances sigma and corresponding standard value.
Display unit 204, for showing the relevant information of detecting unit 200, comparing unit 201, computing unit 202, judging unit 203.Such as: the maximum of the current detection value that the current detection value of detecting unit 200, comparing unit 201 draw, the weighted value of computing unit 202 gained, the mean value of Weight distance and variance yields, the judged result of judging unit 203 and related causes analysis.
Present invention also offers the detection method that the checkout gear applying above-mentioned apparatus for stability of ion beam carries out apparatus for stability of ion beam.
With reference to the schematic flow sheet that figure 3, Fig. 3 is the detection method of embodiment of the present invention apparatus for stability of ion beam, comprising:
Step S301, provides wafer;
Step S302, before injecting or afterwards, obtains multiple current detection values of ion beam, the weighted value that calculating current detected value is corresponding to wafer;
Step S303, calculates mean value and the variance of Weight distance;
Step S304, obtains mean value and the first deviate corresponding to variance yields, mean value and the second deviate corresponding to variance yields, and the first deviate is less than the second deviate;
Step S305, if mean value and variance yields are more than or equal to the first corresponding deviate with the absolute value of the difference of corresponding standard value, or mean value or variance yields are more than or equal to the second corresponding deviate with the absolute value of the difference of corresponding standard value, then ion beam is instability state; If mean value and variance yields are less than the first corresponding deviate with the absolute value of the difference of corresponding standard value, or a value in mean value or variance yields is greater than the first corresponding deviate with the absolute value of the difference of corresponding standard value and is less than the second corresponding deviate, another value and the absolute value of the difference of corresponding standard value are less than the first corresponding deviate, then ion beam is stability status.
Detailed analysis is carried out below by said process.
Perform step S301, wafer is provided.
Described wafer is wafer nude film or product sheet and the control strip being formed with semiconductor device.The quantity of described wafer can be one or more pieces.
Perform step S302, before wafer is injected or afterwards, obtain multiple current detection values of ion beam, the weighted value that calculating current detected value is corresponding.
Because the injection of implanter to wafer is a slice then a slice, therefore to wafer inject before or afterwards, the current value detecting ion beam can, in concrete operation, the detection of ion beam current is all carried out after not needing often to have injected a wafer, the wafer that often can inject some detects once, or detects at regular intervals once mutually.
Obtain multiple current detection value b of ion beam 1, b 2, b 3..., b n, n is the number of current detection value, and the number of current detection value is the same with the number of detecting sensor, and described in the invention process, n is more than or equal to 5.
Calculating current detected value b ncorresponding weighted value x nmeet formula (5) and formula (6):
x n = b n t - - - ( 5 )
t＝Max(b 1,b 2,…,b n)n≥5(6)
Wherein, n is the number of current detection value, and t is current detection value b nin maximum.
Perform step S303, calculate mean value and the variance of Weight distance.
The average value mu and the variances sigma that calculate Weight distance meet formula (7) and formula (8):
μ = x 1 + x 2 * a + ... + x n * ( n - 1 ) * a x 1 + x 2 + ... + x n - - - ( 7 )
σ = x 1 * ( 1 - μ ) 2 + x 2 * ( a - μ ) 2 + ... + x n * [ ( n - 1 ) * a - μ ] 2 x 1 + x 2 + ... + x n - 0.01 - - - ( 8 )
Wherein, b nfor current detection value, x nfor weighted value, a is the spacing of two adjacent current detecting sensors 30, and n is the number of current detection value or weighted value.
Perform step S304, obtain mean value and the first deviate corresponding to variance yields, mean value and the second deviate corresponding to variance yields, the first deviate is less than the second deviate.
Described mean value first deviate is 10% of the standard value of mean value; Described mean value second deviate is 20% of the standard value of mean value.
Described variance yields first deviate is 10% of the standard value of variance yields; Described variance yields second deviate is 20% of the standard value of deviate.
The standard value of described mean value or the standard value of deviate are the value that ion beam is in stable state acquisition, and the standard value of described mean value or the standard value of deviate also can be empirical value.
Perform step S305, if mean value and variance yields are more than or equal to the first corresponding deviate with the absolute value of the difference of corresponding standard value, or mean value or variance yields are more than or equal to the second corresponding deviate with the absolute value of the difference of corresponding standard value, then ion beam is instability state; If mean value and variance yields are less than the first corresponding deviate with the absolute value of the difference of corresponding standard value, or a value in mean value or variance yields is greater than the first corresponding deviate with the absolute value of the difference of corresponding standard value and is less than the second corresponding deviate, another value and the absolute value of the difference of corresponding standard value are less than the first corresponding deviate, then ion beam is stability status.
Concrete determination methods is: when the absolute value of the difference of the standard value of mean value and mean value is more than or equal to mean value first deviate, and when the absolute value of the difference of the standard value of variance yields and variance yields is more than or equal to variance yields the first deviate, ion beam is unsteady state;
When the absolute value of the difference of the standard value of mean value and mean value is greater than mean value second deviate, or when the absolute value of the difference of the standard value of variance yields and variance yields is greater than variance yields the second deviate, judge that ion beam is as unsteady state;
When the absolute value of the difference of the standard value of mean value and mean value is less than mean value first deviate, and when the absolute value of the difference of the standard value of variance yields and variance yields is less than variance yields the first deviate, judge that ion beam is as stable state;
Or a value in mean value or variance yields is greater than the first corresponding deviate with the absolute value of the difference of corresponding standard value and is less than the second corresponding deviate, another value and the absolute value of the difference of corresponding standard value are less than the first corresponding deviate, then ion beam is stability status.
By setting the first deviate and the second deviate, first deviate is less than the second deviate, by the stability of two kinds of condition judgment ion beams, flexibility when improve judgement and accuracy, the accidental saltus step of the ion beam by not affecting semiconductor device stability is prevented to be judged to be unsteady state, as being less than the second deviate by above-mentioned when a value in mean value or variance yields is greater than the first deviate with the absolute value of the difference of corresponding standard value, this situation that another value and the absolute value of the difference of corresponding standard value are less than the first deviate is judged as stable state.
When judging ion beam as unsteady state, stop, to the injection of wafer, providing warning message, user need check injection device or compensate related process parameters.
The detection method of embodiment of the present invention apparatus for stability of ion beam, the multiple current detection value detected compared to existing basis and the multiple current detection values detected last time carry out contrast and go to judge whether electron beam is stablized, or multiple standard values that multiple current detection value is corresponding with multiple current values of foundation compare, but deterministic process is comparatively complicated, criterion is difficult to determine, so also be difficult to judge whether ion beam is stablized accurately, the embodiment of the present invention is passed through multiple discrete current detection value b nbe converted into and current detection value b nthe average value mu of corresponding Weight distance and variances sigma are in order to weigh the stability of ion beam 20, only average value mu and variances sigma need be compared with corresponding standard value, and the criterion of the first deviate and the second deviate can be determined very easily, deterministic process is simple and convenient, improve the accuracy of efficiency and judgement, especially current detection value b nnumber when being greater than 5, the accuracy and efficiency of judgement is higher, improves the detectability of the stability of ion beam 20.
To sum up, the checkout gear of the apparatus for stability of ion beam that the embodiment of the present invention provides and detection method, by multiple discrete current detection value being converted into the average value mu of the weighted value corresponding with current detection value and variances sigma in order to weigh the stability of ion beam, only mean value and variance need be compared with corresponding standard value, and criterion can be determined very easily, deterministic process is simple and convenient, improve the accuracy of efficiency and judgement, especially when the number of current detection value is greater than 5, the accuracy and efficiency judged is higher, improve the detectability of the stability of ion beam.
In addition, by setting criterion first deviate and the second deviate, first deviate is less than the second deviate, if mean value and variance yields are more than or equal to the first corresponding deviate with the absolute value of the difference of corresponding standard value, or mean value or variance yields are more than or equal to the second corresponding deviate with the absolute value of the difference of corresponding standard value, then ion beam is instability state; If mean value and variance yields are less than the first corresponding deviate with the absolute value of the difference of corresponding standard value, or a value in mean value or variance yields is greater than the first corresponding deviate with the absolute value of the difference of corresponding standard value and is less than the second corresponding deviate, another value and the absolute value of the difference of corresponding standard value are less than the first corresponding deviate, then ion beam is stability status, flexibility when improve judgement and accuracy, preventing the accidental saltus step of the ion beam by not affecting semiconductor device stability, being judged as unsteady state.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; the Method and Technology content of above-mentioned announcement can be utilized to make possible variation and amendment to technical solution of the present invention; therefore; every content not departing from technical solution of the present invention; the any simple modification done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all belong to the protection range of technical solution of the present invention.

Claims (11)

1. a checkout gear for apparatus for stability of ion beam, is characterized in that, comprising:
Detecting unit, for detecting the current value of ion beam, described detecting unit comprises and is positioned at collinear equally spaced multiple current detection sensor, the corresponding multiple current detection value of multiple current detection sensor;
Comparing unit, for detecting multiple current detection values of gained according to detecting unit, compares the size of current detection value, obtains the maximum of current detection value;
Computing unit, current detection value and comparing unit for detecting gained according to detecting unit compare the maximum in the current detection value of gained, calculate the weighted value that each current detection value is corresponding, and according to the relative distance between weighted value, current detection sensor, calculate mean value and the variance of Weight distance;
Judging unit, for calculating the mean value of gained and/or the size of variance and corresponding standard value according to computing unit, judging that ion beam is stable state or unsteady state, if ion beam is unsteady state, then providing warning message;
Described computing unit comprises the first computing unit and the second computing unit, described first computing unit compares the maximum in the current detection value of gained for the current detection value and comparing unit detecting gained according to detecting unit, calculate the weighted value that each current detection value is corresponding, described second computing unit, for the spacing between the weighted value according to the first computing unit calculating gained, current detection sensor, calculates mean value and the variance of Weight distance.
2. the checkout gear of apparatus for stability of ion beam as claimed in claim 1, is characterized in that, described first computing unit obtains weighted value by following formula:
x n = b n t
t＝Max(b 1,b 2,…,b n)
Wherein, x nbe the weighted value that the n-th current detection value is corresponding, b nfor current detection value, n is the number of current detection value, and t is the maximum of current detection value.
3. the checkout gear of apparatus for stability of ion beam as claimed in claim 1, it is characterized in that, the number of described current detection sensor is more than or equal to 5.
4. the checkout gear of apparatus for stability of ion beam as claimed in claim 3, is characterized in that, the number of described current detection sensor be more than or equal to 5 odd number.
5. the checkout gear of apparatus for stability of ion beam as claimed in claim 1, it is characterized in that, described current detection sensor is Faraday cup or many multipixel dose array.
6. the checkout gear of apparatus for stability of ion beam as claimed in claim 1, it is characterized in that, total spacing of described current detection sensor is more than or equal to the width of ion beam.
7. the checkout gear of apparatus for stability of ion beam as claimed in claim 1, is characterized in that, also comprise display unit, for showing the information of detecting unit, comparing unit, computing unit, judging unit.
8. a detection method for apparatus for stability of ion beam, is characterized in that, comprising:
Wafer is provided;
Before wafer is injected or afterwards, multiple current detection values of ion beam are obtained, the weighted value that calculating current detected value is corresponding;
Calculate mean value and the variance of Weight distance;
Obtain mean value and the first deviate corresponding to variance, mean value and the second deviate corresponding to variance, the first deviate is less than the second deviate;
If mean value and variance are more than or equal to the first corresponding deviate with the absolute value of the difference of corresponding standard value, or mean value or variance are more than or equal to the second corresponding deviate with the absolute value of the difference of corresponding standard value, then ion beam is instability state; If mean value and variance are less than the first corresponding deviate with the absolute value of the difference of corresponding standard value, or a value in mean value or variance is greater than the first corresponding deviate with the absolute value of the difference of corresponding standard value and is less than the second corresponding deviate, another value and the absolute value of the difference of corresponding standard value are less than the first corresponding deviate, then ion beam is stability status.
9. the detection method of apparatus for stability of ion beam as claimed in claim 8, is characterized in that, mean value and the first deviate corresponding to variance are 10% of standard value corresponding to mean value and variance.
10. the detection method of apparatus for stability of ion beam as claimed in claim 8, is characterized in that, mean value and the second deviate corresponding to variance are 20% of standard value corresponding to mean value and variance.
The detection method of 11. apparatus for stability of ion beams as claimed in claim 8, it is characterized in that, the weighted value that described current detection value is corresponding is obtained by following formula:
x n = b n t
t＝Max(b 1,b 2,…,b n)n≥5
Wherein, x nbe the weighted value that the n-th current detection value is corresponding, b nfor current detection value, n is the number of current detection value, and t is the maximum of current detection value.
CN201110436369.3A 2011-12-22 2011-12-22 The checkout gear of apparatus for stability of ion beam and detection method Active CN102522352B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201110436369.3A CN102522352B (en) 2011-12-22 2011-12-22 The checkout gear of apparatus for stability of ion beam and detection method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201110436369.3A CN102522352B (en) 2011-12-22 2011-12-22 The checkout gear of apparatus for stability of ion beam and detection method

Publications (2)

Publication Number Publication Date
CN102522352A CN102522352A (en) 2012-06-27
CN102522352B true CN102522352B (en) 2016-01-27

Family

ID=46293228

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110436369.3A Active CN102522352B (en) 2011-12-22 2011-12-22 The checkout gear of apparatus for stability of ion beam and detection method

Country Status (1)

Country Link
CN (1) CN102522352B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6350234B2 (en) * 2014-11-18 2018-07-04 日新イオン機器株式会社 Ion beam irradiation apparatus and program used therefor
CN106813703B (en) * 2016-12-20 2019-06-28 歌尔科技有限公司 A kind of method and apparatus of test product function
US11646175B2 (en) * 2019-02-15 2023-05-09 Axcelis Technologies, Inc. Method of mixing upstream and downstream current measurements for inference of the beam current at the bend of an optical element for realtime dose control
CN112618972B (en) * 2020-12-28 2022-06-03 中聚科技股份有限公司 Ultrasonic transducer driving method, storage medium, system and device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101900826A (en) * 2010-06-13 2010-12-01 中国科学院近代物理研究所 Heavy ion beam current transverse dosage distribution measuring detector and two-dimensional imaging method thereof
TW201102630A (en) * 2009-07-15 2011-01-16 Univ Nat Formosa Method and system compute backlight module luminance by using neural networks trained by averages and standard deviations of image intensity values of backlight modules
CN102200586A (en) * 2011-03-04 2011-09-28 中国原子能科学研究院 Heavy ion beam diagnosis device for single particle test and related measurement method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0417250A (en) * 1990-05-09 1992-01-22 Fujitsu Ltd Electron beam device
US6956223B2 (en) * 2002-04-10 2005-10-18 Applied Materials, Inc. Multi-directional scanning of movable member and ion beam monitoring arrangement therefor
US7355188B2 (en) * 2005-05-24 2008-04-08 Varian Semiconductor Equipment Associates, Inc. Technique for uniformity tuning in an ion implanter system
CN101467227A (en) * 2006-06-09 2009-06-24 瓦里安半导体设备公司 Ion beam current uniformity monitor, ion implanter and related method
US7691717B2 (en) * 2006-07-19 2010-04-06 International Business Machines Corporation Polysilicon containing resistor with enhanced sheet resistance precision and method for fabrication thereof
CA2659067A1 (en) * 2006-08-30 2008-03-06 Mds Analytical Technologies, A Business Unit Of Mds Inc., Doing Business Through Its Sciex Division Systems and methods for correcting for unequal ion distribution across a multi-channel tof detector
US7755066B2 (en) * 2008-03-28 2010-07-13 Varian Semiconductor Equipment Associates, Inc. Techniques for improved uniformity tuning in an ion implanter system
US20100050939A1 (en) * 2008-08-26 2010-03-04 Promos Technologies Inc. Method for determining the performance of implanting apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201102630A (en) * 2009-07-15 2011-01-16 Univ Nat Formosa Method and system compute backlight module luminance by using neural networks trained by averages and standard deviations of image intensity values of backlight modules
CN101900826A (en) * 2010-06-13 2010-12-01 中国科学院近代物理研究所 Heavy ion beam current transverse dosage distribution measuring detector and two-dimensional imaging method thereof
CN102200586A (en) * 2011-03-04 2011-09-28 中国原子能科学研究院 Heavy ion beam diagnosis device for single particle test and related measurement method

Also Published As

Publication number Publication date
CN102522352A (en) 2012-06-27

Similar Documents

Publication Publication Date Title
CN102522352B (en) The checkout gear of apparatus for stability of ion beam and detection method
US7663125B2 (en) Ion beam current uniformity monitor, ion implanter and related method
CN101577079B (en) Method and apparatus for testing a display device, substrate for display device and display device
CN107716563B (en) Band automatic centering detection method based on infrared light
CN102200586A (en) Heavy ion beam diagnosis device for single particle test and related measurement method
US20090192730A1 (en) Damage Detection Apparatus, Damage Detection Method and Recording Medium
CN101467227A (en) Ion beam current uniformity monitor, ion implanter and related method
CN103026450A (en) Versatile beam glitch detection system
LENA Collaboration et al. Measurement of R in e+ e− annihilation for\sqrt s between 7.4 and 9.4 GeV
CN105005070A (en) Method and apparatus of distinguishing a suspected ion beam behind an accelerator analysis magnet
US10338028B2 (en) Ion mobility separation device
Acosta et al. Lateral shower profiles in a lead/scintillating fiber calorimeter
Hubbard et al. Charge distributions of oxygen and neon ions passing through gases
US20060033041A1 (en) Ion implantation monitor system and method thereof
Tsang et al. Space charge effects in the SπRIT time projection chamber
CN105097584A (en) Detection method for ion implantation dosage
CN103904009A (en) Method for monitoring stability and uniformity of ion implanter
Zhao et al. Precision measurement of charge symmetry breaking in np elastic scattering at 347 MeV
JP2020091293A (en) Dose distribution monitor and radiation irradiation system
TWI404107B (en) Determining ion beam parallelism using refraction method
CN107525625A (en) A kind of pressure screen method of testing and mobile terminal
CN104036834A (en) Method for measuring subcriticality of subcritical system
CN104465435A (en) Daily monitoring method for ion implantation dip angle
CN111346379A (en) Method and device for realizing collision processing
CN108010827B (en) Method for detecting beam angle

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING

Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI

Effective date: 20140408

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20140408

Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399

Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation

Address before: Zuchongzhi road in Pudong Zhangjiang hi tech park Shanghai city Pudong New Area No. 1399 201203

Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai

C14 Grant of patent or utility model
GR01 Patent grant