CN102522262A - MEMS acceleration switch - Google Patents
MEMS acceleration switch Download PDFInfo
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- CN102522262A CN102522262A CN2011104192257A CN201110419225A CN102522262A CN 102522262 A CN102522262 A CN 102522262A CN 2011104192257 A CN2011104192257 A CN 2011104192257A CN 201110419225 A CN201110419225 A CN 201110419225A CN 102522262 A CN102522262 A CN 102522262A
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Abstract
The invention provides an MEMS acceleration switch which comprises a substrate (5), a silicon framework (8), arc cantilever beams (1), an annular mass block (2), a bump column (3), an annular contact electrode (4) and a silicon cover (7). The silicon framework is fixed on the substrate and a center of the silicon framework is provided with a circular hole. The bump column is positioned at the center of the silicon framework and is fixed on the substrate. The silicon framework circular hole is uniformly distributed with a group of suspended arc cantilever beams, and an end part of each of the arc cantilever beams is connected with the annular mass block. The annular mass block and the bump column are concentric, and certain gap is formed between the annular mass block and the bump column. The annular contact electrode is under the annular mass block and is fixed on the substrate. The MEMS acceleration switch employs an annular bump structure, signal detection in a plurality of directions of an arbitrary plane direction, a direction which is perpendicular to a horizontal plane direction and the like can be realized, simultaneously, annular structure design is employed, and high shock resistance capability of the switch is raised. The MEMS acceleration switch has the characteristics of exquisite structure, simple processing technology, convenient batch manufacture and the like.
Description
Technical field
The invention belongs to the micro-electronic mechanical skill field, relate to a kind of acceleration switch based on MEMS.
Background technology
Acceleration switch is responded to the variation of foreign impacts acceleration through " mass-spring " system, and surpasses execution switch closure action under the situation of threshold value at acceleration.Development along with MEMS (Micro-Electro-Mechanical Systems) technology; The miniature acceleration switch that is the basis with the MEMS technology is because volume is little, light weight, low in energy consumption, remarkable advantage such as anti-electromagnetic interference capability is strong; Can be used for automobile safety protector, goods transport systems, reliability fall-down test and aircraft etc., have huge using value.Existing MEMS acceleration switch is primarily aimed at the detection of signal on the vertical level direction, can't realize the detection of signal on two above directions such as horizontal plane any direction and vertical level.Existing in addition MEMS acceleration switch shock resistance also remains further to be improved.
Summary of the invention
The object of the invention is exactly the shortcoming that can not be used for input on a plurality of directions to existing MEMS acceleration switch, and a kind of MEMS acceleration switch of realizing input on a plurality of directions such as horizontal plane any direction and vertical level direction is provided.
For realizing above-mentioned purpose, the present invention has adopted following technical scheme:
A kind of MEMS acceleration switch comprises substrate, connects one deck silicon frame through MEMS technology on the substrate; The silicon frame center is provided with circular hole, and the circular hole center is provided with the collision post of silicon materials making and is fixed on the substrate; One group of unsettled cantilever beam is distributed in the interior circular hole of silicon frame, and the other end of each cantilever beam is connected with unsettled annular mass; The annular mass is concentric and have 3 microns～20 microns gap with the collision post, and the substrate below the annular mass is provided with the metal ring contact electrode; On silicon frame and collision post, be provided with extraction electrode; A silicon block is set on silicon frame, on the silicon block extraction electrode hole is arranged; The silicon block forms a cavity with silicon frame through bonding, and cantilever beam and annular mass can move in cavity, and form a closed system.
Described annular mass is unsettled on substrate, and is connected equably in the silicon frame in the circular hole through one group of cantilever beam;
Described annular contact electrode is positioned on the substrate of annular mass below;
Described collision post and silicon frame are fixed on the substrate through bonding technology;
Described extraction electrode is fixed on silicon frame and the collision post;
Described silicon block is provided with the extraction electrode fairlead;
Described cantilever beam can be arc beam or tortuous beam, quantitatively is no less than four;
Described metal ring contact electrode can also can link together and form a collision electrode separately as a collision electrode with the collision post.
Among the present invention substrate adopt sheet glass or silicon chip; Metal materials such as described annular contact electrode and extraction electrode employing sputter or evaporated gold, aluminium, copper form.
Described cantilever beam, annular mass, collision post and silicon frame adopt body silicon MEMS processes to form, and form an obturator with silicon block, substrate through the bonding mode.
Cantilever beam among the present invention, annular mass and silicon frame are formed a collision electrode, and annular contact electrode is formed a collision electrode, and the collision post is formed a collision electrode.When total receives horizontal plane any direction acceleration, when reaching design threshold, annular mass contacts with the collision post, and horizontal plane any direction collision sensing signal is provided; When perhaps receiving the effect of vertical level directional acceleration and reaching threshold value, mass contacts with annular contact electrode, and two electrodes connect, and vertical level direction collision sensing signal is provided.Collision on other direction all can decompose on horizontal plane direction and the vertical level direction.Through with upper type, realized input on a plurality of directions such as horizontal plane any direction and vertical level direction.
The present invention has following advantage:
(1) adopts annular mass and fix, and adopt annular impingement area, realized the accurate detection of collision alarm on a plurality of directions such as horizontal plane any direction and vertical level direction through one group of cantilever beam.
(2) all structure members of the present invention adopt the circular arc design, have stronger impact resistance, can satisfy the application demand under the severe rugged environment condition.
Description of drawings
Fig. 1 is the cross-sectional view of first embodiment;
Fig. 2 is the vertical view that first embodiment removes the silicon cover plate;
Fig. 3 is an endless metal layer and the structural representation that links together of collision post among second embodiment;
Fig. 4 is the structural representation that tortuous beam replaces the arc cantilever beam among the 3rd embodiment.
Embodiment
Below in conjunction with accompanying drawing structure of the present invention is done further explanation.
Like Fig. 1, shown in Figure 2; The present invention includes substrate 5, connect one deck silicon frame 8 through bonding technology on the substrate 5, silicon frame 8 centers are provided with circular hole; The collision post 3 that the circular hole center is provided with the silicon materials making links to each other with substrate 5; Be uniformly distributed with one group of unsettled arc cantilever beam 1 on the silicon frame 8 circular hole walls, the end of each arc cantilever beam 1 is connected with unsettled annular mass 2, and annular mass 2 is concentric and have an annular gap a of 3 microns～20 microns with collision post 3; The substrate of annular mass below is provided with annular contact electrode 4, is provided with 3 microns～20 microns down suction between them; On silicon frame 8, reach collision post 3 and be provided with extraction electrode 6; On silicon frame 8, adopt bonding technology that a silicon block 7 is set; Silicon block 7 is provided with the fairlead of extraction electrode 6; Form a cavity between silicon block 7 and the silicon frame 8, unsettled arc cantilever beam and annular mass can move in cavity.
The material of substrate 5 adopts glass or monocrystalline silicon piece; Silicon block 7 is processed extraction electrode for ease and is also adopted single crystal silicon material to process; Annular contact electrode 4 adopts metal materials such as gold, aluminium to make with extraction electrode 6, and arc cantilever beam 1, annular mass 2, collision post 3 and silicon frame 8 all adopt single crystal silicon material to process.
As shown in Figure 3, be the second embodiment of the present invention: annular contact electrode 4 links together through bonding technology with collision post 3 and forms a collision electrode.
As shown in Figure 4, be the third embodiment of the present invention: the cantilever beam of acceleration switch becomes tortuous beam, and other structure division is constant.
Do the time spent when the acceleration switch acceleration that is collided, annular mass 2 can move on any direction and on the vertical level direction in horizontal plane under the elastic force acting in conjunction of inertia force and arm ellbeam 1.When the acceleration of external influence reached preset threshold, annular mass 2 contacted with collision post 3 or annular contact electrode 4, realizes the conducting of two electrodes.Annular subsequently mass 2 under the effect of the elastic force of cantilever beam 1 and the collision post opened in 3 minutes, be returned to reset condition, switch is in the state of " breaking ".
Acceleration switch of the present invention, the size of the controllable size system threshold acceleration through regulating cantilever beam 1 and annular mass 2.Through the gap between adjustment mass 2 and collision post 3 and the annular contact electrode 4, the effectively response time of by-pass cock and time of contact.All structure members of this acceleration switch are circle or circular arc, and anti-HI high impact ability is better.
Acceleration switch of the present invention adopts body silicon MEMS processes.Structure sheaf back-etching step at first; At substrate making electrode on glass; Be in the same place with substrate bonding through electrostatic bonding method bar structure layer; Front etching structure layer forms arc cantilever beam, annular mass, silicon frame and collision post; Silicon cap back-etching goes out vestibule; Adopt bonding technology to carry out the disk encapsulation of structure sheaf and silicon cap; The etch silicon cap is positive, exposes electrode.
Claims (4)
1. a MEMS acceleration switch is characterized in that being made up of substrate (5), silicon frame (8), one group of cantilever beam (1), annular mass (2), collision post (3), annular contact electrode (4) and block (7);
Silicon frame (8) center is provided with circular hole and is fixed on the substrate (5) through MEMS technology;
One end of each cantilever beam (1) is connected the inboard of silicon frame circular hole and is in vacant state;
The other end of each cantilever beam (1) is connected on the annular mass (2), makes annular mass (2) unsettled on substrate (5), and is in the silicon frame circular hole;
Collision post (3) is fixed on the substrate (5) at silicon frame center, and collision post (3) and annular mass (2) concentric also has 3 microns～20 microns annular gap;
Annular contact electrode (4) is fixed on the substrate below the annular mass (2) and annular mass is having certain interval;
Go up and collide post (3) at silicon frame (8) and be provided with extraction electrode (6), block (7) is closed one group of cantilever beam and annular mass, and block is provided with the fairlead of extraction electrode (6).
2. a kind of MEMS acceleration switch according to claim 1 is characterized in that: described cantilever beam is arc beam or tortuous beam, quantitatively is no less than four.
3. a kind of MEMS acceleration switch according to claim 1 is characterized in that: described backing material adopts glass or monocrystalline silicon piece.
4. a kind of MEMS acceleration switch according to claim 1 is characterized in that: described annular contact electrode can be drawn separately as a collision electrode, also can link together jointly as a collision electrode with the collision post.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104192257A CN102522262A (en) | 2011-12-15 | 2011-12-15 | MEMS acceleration switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104192257A CN102522262A (en) | 2011-12-15 | 2011-12-15 | MEMS acceleration switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102522262A true CN102522262A (en) | 2012-06-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011104192257A Pending CN102522262A (en) | 2011-12-15 | 2011-12-15 | MEMS acceleration switch |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102798460A (en) * | 2012-08-08 | 2012-11-28 | 北京理工大学 | Impact-type piezoelectric acceleration transducer |
| CN102862947A (en) * | 2012-09-18 | 2013-01-09 | 华东光电集成器件研究所 | MEMS (micro-electromechanical systems) device and vacuum encapsulation method of wafer level thereof |
| CN104143473A (en) * | 2013-05-06 | 2014-11-12 | 重庆绿色智能技术研究院 | Acceleration switch and control method of acceleration switch |
| CN105593158A (en) * | 2014-09-05 | 2016-05-18 | 卡文迪什动力有限公司 | Internally generated DFT stepped hysteresis sweep for electrostatic MEMS |
| CN107153384A (en) * | 2017-06-29 | 2017-09-12 | 北京宏动科技有限公司 | Active MEMS inertia switches |
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| JPH11232974A (en) * | 1998-02-17 | 1999-08-27 | Denso Corp | Switching type acceleration sensor and manufacture of the same |
| US6199430B1 (en) * | 1997-06-17 | 2001-03-13 | Denso Corporation | Acceleration sensor with ring-shaped movable electrode |
| US20030127670A1 (en) * | 2002-01-07 | 2003-07-10 | Honeywell International Inc. | Contactless acceleration switch |
| US20060033598A1 (en) * | 2004-08-16 | 2006-02-16 | Greywall Dennis S | MEMS-based inertial switch |
| CN101789329A (en) * | 2010-03-19 | 2010-07-28 | 上海交通大学 | Three-dimensional multidirectional-sensitive micromechanical inertial electrical switch |
| US7956302B1 (en) * | 2008-01-16 | 2011-06-07 | The United States Of America As Represented By The Secretary Of The Navy | Hermetically packaged MEMS G-switch |
| CN102254741A (en) * | 2011-07-06 | 2011-11-23 | 重庆大学 | Micro-mechanical acceleration switch |
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2011
- 2011-12-15 CN CN2011104192257A patent/CN102522262A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6199430B1 (en) * | 1997-06-17 | 2001-03-13 | Denso Corporation | Acceleration sensor with ring-shaped movable electrode |
| JPH11232974A (en) * | 1998-02-17 | 1999-08-27 | Denso Corp | Switching type acceleration sensor and manufacture of the same |
| US20030127670A1 (en) * | 2002-01-07 | 2003-07-10 | Honeywell International Inc. | Contactless acceleration switch |
| US20060033598A1 (en) * | 2004-08-16 | 2006-02-16 | Greywall Dennis S | MEMS-based inertial switch |
| US7956302B1 (en) * | 2008-01-16 | 2011-06-07 | The United States Of America As Represented By The Secretary Of The Navy | Hermetically packaged MEMS G-switch |
| CN101789329A (en) * | 2010-03-19 | 2010-07-28 | 上海交通大学 | Three-dimensional multidirectional-sensitive micromechanical inertial electrical switch |
| CN102254741A (en) * | 2011-07-06 | 2011-11-23 | 重庆大学 | Micro-mechanical acceleration switch |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102798460A (en) * | 2012-08-08 | 2012-11-28 | 北京理工大学 | Impact-type piezoelectric acceleration transducer |
| CN102862947A (en) * | 2012-09-18 | 2013-01-09 | 华东光电集成器件研究所 | MEMS (micro-electromechanical systems) device and vacuum encapsulation method of wafer level thereof |
| CN104143473A (en) * | 2013-05-06 | 2014-11-12 | 重庆绿色智能技术研究院 | Acceleration switch and control method of acceleration switch |
| US10029914B2 (en) | 2013-09-06 | 2018-07-24 | Cavendish Kinetics, Inc. | Internally generated DFT stepped hysteresis sweep for electrostatic MEMS |
| CN105593158A (en) * | 2014-09-05 | 2016-05-18 | 卡文迪什动力有限公司 | Internally generated DFT stepped hysteresis sweep for electrostatic MEMS |
| CN105593158B (en) * | 2014-09-05 | 2019-02-01 | 卡文迪什动力有限公司 | The DFT staged sluggishness for electrostatic MEMS that inside generates scans |
| CN107153384A (en) * | 2017-06-29 | 2017-09-12 | 北京宏动科技有限公司 | Active MEMS inertia switches |
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Application publication date: 20120627 |